CN214473924U - Millimeter wave sensor - Google Patents
Millimeter wave sensor Download PDFInfo
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- CN214473924U CN214473924U CN202120398959.0U CN202120398959U CN214473924U CN 214473924 U CN214473924 U CN 214473924U CN 202120398959 U CN202120398959 U CN 202120398959U CN 214473924 U CN214473924 U CN 214473924U
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Abstract
The utility model provides a millimeter wave sensor, including casing and the main control chip of setting inside the casing, millimeter wave sensor chip, receiving antenna array, transmitting antenna array, power module and temperature sensor, the millimeter wave sensor chip is connected to the main control chip, power module and temperature sensor, receiving antenna array and transmitting antenna array are connected respectively to millimeter wave sensor chip, millimeter wave sensor chip is including the signal generator who connects gradually, radio frequency receiving and dispatching integrated unit, band pass filter, the amplifier, AD converter and digital signal processor, millimeter wave sensor still includes a plurality of communication interface, a plurality of communication interface connect respectively the main control chip, millimeter wave sensor chip and power module, receiving antenna array and transmitting antenna array are four array element structures respectively; the utility model discloses simple structure, integrated level height, small, be convenient for batch production and with low costs.
Description
Technical Field
The utility model relates to a radar detection and safe technical field particularly, relate to a millimeter wave sensor.
Background
With the popularization and expansion of artificial intelligence and internet of things application, the application requirements of the multidimensional sensing technology are gradually growing, wherein the millimeter wave sensor is an important component of the technology. The millimeter wave radar operates in the millimeter wave band. Usually, the millimeter wave refers to the frequency band of 30 to 300GHz (the wavelength is 1 to 10 mm). The millimeter wave seeker has the advantages of small size, light weight, high spatial resolution, interference resistance and the like, and has great significance in the aspects of communication, radar, guidance, remote sensing technology, radio astronomy and wave spectroscopy. The millimeter wave receiving and transmitting integrated chip is a key component of the millimeter wave sensor, and the chip technology is mainly controlled by foreign semiconductor companies. Due to the limitation of the domestic chip technology, the millimeter wave sensor is mostly formed by discrete devices, so that the volume and the cost become fatal defects, and the mass production cannot be realized due to the immature process.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a millimeter wave sensor, its simple structure, small portable, the batch production of being convenient for, with low costs.
The embodiment of the utility model discloses a realize through following technical scheme:
the millimeter wave sensor comprises a shell, and a main control chip, a millimeter wave sensor chip, a receiving antenna array, a transmitting antenna array, a power supply module and a temperature sensor which are arranged inside the shell, wherein the main control chip is connected with the millimeter wave sensor, the power supply module and the temperature sensor, the millimeter wave sensor chip is respectively connected with the receiving antenna array and the transmitting antenna array, and the receiving antenna array and the transmitting antenna array are of a four-array-element antenna structure.
Preferably, the millimeter wave sensor still includes a plurality of communication interfaces, communication interface sets up the lateral wall of casing, communication interface is drive control interface, SPI control circuit interface and power source respectively, drive control interface with the master control chip is connected, SPI control circuit interface with the millimeter wave sensor chip is connected, power source with power module connects.
Preferably, the surface of the shell is further provided with a metal frame, and metal through holes are uniformly distributed on the metal frame.
Preferably, the millimeter wave sensor chip comprises a signal generator, a radio frequency transceiving integrated unit, a band-pass filter, an amplifier, an a/D converter and a digital signal processor which are connected in sequence.
Preferably, the signal generator includes a crystal oscillator and a phase-locked loop connected in sequence, and an output end of the phase-locked loop is connected to the radio frequency transceiving integrated unit.
Preferably, the radio frequency transceiving integrated unit includes a voltage-controlled oscillator, a power divider, a transmit channel module, and a receive channel module, an input end of the voltage-controlled oscillator is connected to an output end of the phase-locked loop, an output end of the voltage-controlled oscillator is connected to the power divider, output ends of the power divider are respectively connected to the transmit channel module and the receive channel module, an output end of the transmit channel module is connected to the transmit antenna array, and an input end of the receive channel module is connected to the receive antenna array.
Preferably, the transmission channel assembly includes a first power amplifier and a detector connected in sequence, the first power amplifier is connected to the power divider, and an output end of the detector is connected to the transmission antenna array.
Preferably, the receive channel module includes a second power amplifier, a phase shifter, two mixers, and a low noise amplifier, the second power amplifier is connected to the output end of the power divider, the output end of the second power amplifier is connected to the phase shifter, the output ends of the phase shifter are respectively connected to the input ends of the two mixers, the output end of the low noise amplifier is respectively connected to the input ends of the two mixers, the input end of the low noise amplifier is connected to the receive antenna array, and the output end of the mixer is connected to the band pass filter.
Preferably, the output terminal of the voltage-controlled oscillator is further connected to the phase-locked loop.
Preferably, the radio frequency transceiving integrated unit is a 2mm transceiving integrated chip, and the millimeter wave sensor chip is a 2mm wave sensor chip.
The utility model discloses technical scheme has following advantage and beneficial effect at least:
compared with the existing 24/77GHz millimeter wave sensor, the millimeter wave sensor has the advantages of higher signal frequency, strong beam directivity, strong anti-interference capability, small size and light weight. In addition, compared with a sensor composed of a transmitting-receiving integrated chip and discrete devices, the sensor has the advantages of simple structure, small size, portability, convenience in batch production and low cost, greatly improves the adaptability of the sensor, and provides strong technical support for increasingly complex informatization detection environments in the future;
the utility model relates to a rationally, simple structure, the practicality is strong.
Drawings
Fig. 1 is a schematic structural diagram of a millimeter wave sensor provided in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a millimeter wave sensor chip provided in embodiment 1 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Example 1
As shown in fig. 1-2, a millimeter wave sensor includes a housing, and a main control chip, a millimeter wave sensor chip, a receiving antenna array, a transmitting antenna array, a power module, and a temperature sensor, which are disposed inside the housing, where the main control chip is connected to the millimeter wave sensor, the power module, and the temperature sensor, the millimeter wave sensor chip is respectively connected to the receiving antenna array and the transmitting antenna array, and the receiving antenna array and the transmitting antenna array are both of a four-array-element antenna structure. The millimeter wave sensor chip is used for detecting data information of a detection target, the power module is used for supplying power to the millimeter wave sensor, the transmitting antenna array and the receiving antenna array are respectively used for transmitting frequency modulation continuous wave signals generated by the millimeter wave sensor and receiving bar-shaped continuous wave signals reflected and fed back when encountering the detection target, and the temperature sensor is used for detecting the temperature in the shell of the millimeter wave sensor so as to prevent the service life of the millimeter wave sensor from being shortened due to overheating of the temperature in the shell.
The transmitting antenna array comprises a first array element, a second array element, a third array element and a fourth array element, the first array element and the second array element which are connected in series are connected in parallel with the third array element and the fourth array element which are connected in series, the horizontal distance between the first array element and the second array element is equal to the horizontal distance between the third array element and the fourth array element, and the vertical distance between the first array element and the third array element is equal to the vertical distance between the second array element and the fourth array element. The receiving antenna array and the transmitting antenna array have the same structure.
The millimeter wave sensor still includes a plurality of communication interface, communication interface sets up the lateral wall of casing, communication interface is drive control interface, SPI control circuit interface and power source respectively, drive control interface with main control chip connects, SPI control circuit interface with millimeter wave sensor chip connects, power source with power module connects. The external system controls the main control chip by connecting the driving control interface, can adjust the parameters of the main control chip and acquire the data of the main control chip, and programs and debugs the millimeter wave sensor by connecting the SPI control circuit interface, in particular, debugs the parameters of the signal generator of the millimeter wave sensor chip, and the millimeter wave sensor charges the power module through the power interface.
The surface of the shell is also provided with a metal frame, and metal through holes are uniformly distributed on the metal frame. The metal via holes effectively reduce the side interference and are also beneficial to forming the array antenna pattern.
The millimeter wave sensor chip comprises a signal generator, a radio frequency transceiving integrated unit, a band-pass filter, an amplifier, an A/D converter and a digital signal processor which are connected in sequence. Specifically, the sampling rate of the A/D converter is 2.4MHz, so that the pressure of a sampling circuit can be reduced, and the system cost can be reduced.
The band-pass filter is used for filtering I, Q orthogonal difference frequency signals obtained by frequency mixing of the radio frequency transceiving integrated unit to obtain effective target signals; the amplifier is used for amplifying the effective signal; the A/D converter is used for converting the amplified target signal into a digital signal; and the digital signal processor is used for analyzing and calculating the converted digital signals to obtain specific distance information of the detection target.
The signal generator comprises a crystal oscillator and a phase-locked loop which are connected in sequence, and the output end of the phase-locked loop is connected with the radio frequency transceiving integrated unit. The crystal oscillator and the phase-locked loop are used for generating a triangular wave signal.
The radio frequency transceiving integrated unit comprises a voltage-controlled oscillator, a power divider, a transmitting channel assembly and a receiving channel assembly, wherein the input end of the voltage-controlled oscillator is connected with the output end of the phase-locked loop, the output end of the voltage-controlled oscillator is connected with the power divider, the output end of the power divider is respectively connected with the transmitting channel assembly and the receiving channel assembly, the output end of the transmitting channel assembly is connected with the transmitting antenna array, and the input end of the receiving channel assembly is connected with the receiving antenna array.
The voltage-controlled oscillator is used for controlling the center line frequency of the received triangular wave signal to generate a frequency-modulated continuous wave signal; the power divider is used for evenly distributing the power of the frequency modulation continuous wave signals, dividing the frequency modulation continuous wave signals into two paths of transmitting signals and outputting the two paths of transmitting signals to the transmitting channel assembly and the receiving channel assembly; and the transmitting channel component transmits one path of continuous wave signal, and the receiving channel component mixes the other path of continuous wave signal with the continuous wave signal reflected by the received detection target object to obtain an orthogonal cross evaluation signal. The receiving channel assembly and the transmitting channel assembly are simple in principle, the same source of the receiving and transmitting signals can obtain an accurate frequency difference, the integration level of a front end circuit is very high, and the obtained I, Q signals can effectively inhibit circuit noise and the leakage of the receiving and transmitting signals.
The transmitting channel assembly comprises a first power amplifier and a detector which are sequentially connected, the first power amplifier is connected with the power divider, and the output end of the detector is connected with the transmitting antenna array.
The receiving channel assembly comprises a second power amplifier, a phase shifter, two mixers and a low noise amplifier, wherein the second power amplifier is connected with the output end of the power divider, the output end of the second power amplifier is connected with the phase shifter, the output ends of the phase shifter are respectively connected with the input ends of the two mixers, the output end of the low noise amplifier is respectively connected with the input ends of the two mixers, the input end of the low noise amplifier is connected with the receiving antenna array, and the output end of the mixer is connected with the band pass filter. The two mixers output I, Q quadrature signals to bandpass filters, respectively.
The output end of the voltage-controlled oscillator is also connected with the phase-locked loop. And a part of output signals of the voltage-controlled oscillator are coupled and then input into the phase-locked loop through the frequency divider for controlling the voltage-controlled oscillator to output corresponding output frequency, so that a frequency control loop is formed, the frequency divider with high performance is used for dividing the frequency of the millimeter wave signals to lower frequency, the realization difficulty of the phase-locked loop circuit is reduced, and the frequency locking frequency precision of the phase-locked loop circuit can be ensured.
The radio frequency transceiving integrated unit is a 2mm transceiving integrated chip, and the millimeter wave sensor chip is a 2mm wave sensor chip. The gap of the application of the domestic 2mm integrated transceiver chip is filled, the volume cost of the whole product is greatly reduced, the problem of transmission matching of high-frequency signals between circuits is avoided, and the mass production of the product is facilitated.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The millimeter wave sensor is characterized by comprising a shell, and a main control chip, a millimeter wave sensor chip, a receiving antenna array, a transmitting antenna array, a power supply module and a temperature sensor which are arranged inside the shell, wherein the main control chip is connected with the millimeter wave sensor, the power supply module and the temperature sensor, the millimeter wave sensor chip is respectively connected with the receiving antenna array and the transmitting antenna array, and the receiving antenna array and the transmitting antenna array are of four-array-element antenna structures.
2. The millimeter wave sensor according to claim 1, further comprising a plurality of communication interfaces, wherein the communication interfaces are disposed on a side wall of the housing, the communication interfaces are respectively a driving control interface, an SPI control circuit interface, and a power interface, the driving control interface is connected to the main control chip, the SPI control circuit interface is connected to the millimeter wave sensor chip, and the power interface is connected to the power module.
3. The millimeter wave sensor according to claim 1, wherein a metal frame is further disposed on the surface of the housing, and metal vias are uniformly distributed on the metal frame.
4. The millimeter wave sensor according to claim 1, wherein the millimeter wave sensor chip comprises a signal generator, a radio frequency transceiver integrated unit, a band pass filter, an amplifier, an a/D converter and a digital signal processor, which are connected in sequence.
5. The millimeter wave sensor according to claim 4, wherein the signal generator comprises a crystal oscillator and a phase-locked loop connected in sequence, and an output end of the phase-locked loop is connected to the RF transceiving integrated unit.
6. The millimeter wave sensor according to claim 5, wherein the rf transceiver integrated unit includes a voltage-controlled oscillator, a power divider, a transmit channel module, and a receive channel module, an input of the voltage-controlled oscillator is connected to an output of the phase-locked loop, an output of the voltage-controlled oscillator is connected to the power divider, outputs of the power divider are respectively connected to the transmit channel module and the receive channel module, an output of the transmit channel module is connected to the transmit antenna array, and an input of the receive channel module is connected to the receive antenna array.
7. The millimeter wave sensor according to claim 6, wherein the transmission channel module comprises a first power amplifier and a detector connected in sequence, the first power amplifier is connected to the power divider, and an output end of the detector is connected to the transmission antenna array.
8. The millimeter wave sensor according to claim 6, wherein the receive channel module comprises a second power amplifier, a phase shifter, two mixers, and a low noise amplifier, the second power amplifier is connected to the output of the power divider, the output of the second power amplifier is connected to the phase shifter, the outputs of the phase shifter are respectively connected to the inputs of the two mixers, the outputs of the low noise amplifier are respectively connected to the inputs of the two mixers, the inputs of the low noise amplifier are connected to the receive antenna array, and the outputs of the mixers are connected to the band pass filter.
9. A millimeter wave sensor according to claim 6, wherein the output of the voltage controlled oscillator is further connected to the phase locked loop.
10. The millimeter wave sensor according to claim 4, wherein the RF transceiver IC is a 2mm transceiver IC, and the millimeter wave sensor chip is a 2mm wave sensor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120398959.0U CN214473924U (en) | 2021-02-23 | 2021-02-23 | Millimeter wave sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120398959.0U CN214473924U (en) | 2021-02-23 | 2021-02-23 | Millimeter wave sensor |
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| Publication Number | Publication Date |
|---|---|
| CN214473924U true CN214473924U (en) | 2021-10-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120398959.0U Active CN214473924U (en) | 2021-02-23 | 2021-02-23 | Millimeter wave sensor |
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| CN (1) | CN214473924U (en) |
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2021
- 2021-02-23 CN CN202120398959.0U patent/CN214473924U/en active Active
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