CN214376075U - Reference unit circuit, high-voltage reference source and adjustable high-voltage reference source - Google Patents
Reference unit circuit, high-voltage reference source and adjustable high-voltage reference source Download PDFInfo
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- CN214376075U CN214376075U CN202023116462.XU CN202023116462U CN214376075U CN 214376075 U CN214376075 U CN 214376075U CN 202023116462 U CN202023116462 U CN 202023116462U CN 214376075 U CN214376075 U CN 214376075U
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Abstract
The utility model is suitable for an electron technical field provides a benchmark unit circuit, high voltage reference source and adjustable high voltage reference source, benchmark unit circuit includes: the collector or the drain of the transistor is connected with the cathode end, the emitter or the source of the transistor is connected with the negative power supply end of the operational amplifier and the internal signal ground and is connected with the anode end, the base or the grid of the transistor is connected with the output end of the operational amplifier, the positive power supply end of the operational amplifier is connected with the positive end of the auxiliary power supply, the non-inverting input end of the operational amplifier is connected with the external input reference end, and the internal input reference voltage is connected between the inverting input end of the operational amplifier and the internal signal ground; the collector or drain of the transistor is open inside the cell circuit. The utility model discloses a reference voltage is higher than the design of the voltage reference source of 36V to KV level.
Description
Technical Field
The utility model belongs to the technical field of the electron, especially, relate to a benchmark unit circuit, high voltage reference source and adjustable high voltage reference source.
Background
The programmable reference is a precise adjustable three-end parallel voltage-stabilizing unit circuit, and is mainly applied to forming a reference voltage source or a feedback loop of a switching power supply. A common programmable reference is integrated circuit TL 431. The reference voltage Vref of TL431 is about 2.5V, the maximum operating voltage is 36V, and when a feedback loop of a reference voltage source or a switching power supply is formed, the voltage between output terminals thereof is set to an arbitrary value only between Vref and 36V through an external resistor.
For a reference voltage source with a reference voltage higher than 36V, particularly a reference voltage source with adjustable reference voltage, no proper integrated circuit or unit circuit is available; when the Zener diode with fixed voltage is used, only limited nominal value can be selected, the highest working voltage is less than 500V, and no Zener diode can be used for a reference voltage source with reference voltage which is beyond the nominal value of the Zener diode or is higher than 500V. For a reference voltage source with a reference voltage of more than 500V or a reference voltage source with a reference voltage adjustable with a highest reference voltage of more than 36V, no integrated circuit or unit circuit is available at present.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a reference cell circuit, high voltage reference source and adjustable high voltage reference source aim at solving reference voltage and be the reference voltage source more than 36V or the highest reference voltage is the reference voltage adjustable reference voltage source more than 36V, does not have integrated circuit or the problem that cell circuit can supply to use at present.
In a first aspect, the present invention provides a reference cell circuit, including: a transistor Q1, an operational amplifier U1, an internal signal ground F, an internal reference voltage Vref, and an external input reference terminal REF, a CATHODE terminal CATHODE, an ANODE terminal ANODE, and an auxiliary power supply positive terminal VCC; the collector or the drain of the transistor Q1 is opened inside the unit circuit and is connected with the CATHODE terminal CATHODE, the emitter or the source of the transistor Q1 is connected with the negative power supply terminal of the operational amplifier U1 and the internal signal ground F and is connected with the ANODE terminal ANODE, the base or the gate of the transistor Q1 is connected with the output terminal of the operational amplifier U1, the positive power supply terminal of the operational amplifier U1 is connected with the positive terminal VCC of the auxiliary power supply, the non-inverting input terminal of the operational amplifier U1 is connected with the external input reference terminal REF, and the internal input reference voltage Vref is connected between the inverting input terminal of the operational amplifier U1 and the internal signal ground F; the collector or drain of the transistor is open inside the cell circuit.
In a second aspect, the present invention provides a high voltage reference source, which comprises the reference unit circuit, a voltage input terminal Vi, a voltage output terminal Vo, a fifth capacitor C5, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, and an eleventh resistor R11, the voltage input end Vi is connected with one end of an eleventh resistor R11, the other end of the eleventh resistor R11 is respectively connected with the voltage output end Vo and a collector or a drain of a transistor Q1, a seventh resistor R7, an eighth resistor R8 and a ninth resistor R9 are sequentially connected in series, two ends of the seventh resistor R7, two ends of the eighth resistor R8 and two ends of the ninth resistor R9 are respectively connected with the voltage output end Vo and a non-inverting input end of an operational amplifier U1, two ends of a tenth resistor R10 are respectively connected with a non-inverting input end and a negative power end of an operational amplifier U1, and two ends of a fifth capacitor C5 are respectively connected with the voltage output end Vo and a negative power end of the operational amplifier U1.
In a third aspect, the present invention provides an adjustable high voltage reference source, the reference unit circuit further includes a voltage input terminal Vi, a voltage output terminal Vo, a fifth capacitor C5, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, and a potentiometer VR1, the voltage input end Vi is connected with one end of an eleventh resistor R11, the other end of the eleventh resistor R11 is respectively connected with a voltage output end Vo and a collector or a drain of a transistor Q1, a seventh resistor R7, an eighth resistor R8 and a ninth resistor R9 are sequentially connected in series, two ends of the seventh resistor R7, two ends of the eighth resistor R8 and two ends of the ninth resistor R9 are respectively connected with a voltage output end Vo and a non-inverting input end of an operational amplifier U1, two ends of a tenth resistor R10 and two ends of a potentiometer VR1 are respectively connected with a non-inverting input end and a negative power end of an operational amplifier U1, and two ends of a fifth capacitor C5 are respectively connected with the voltage output end Vo and a negative power end of the operational amplifier U1.
The utility model discloses the withstand voltage of transistor is higher than the reference voltage that this adjustable high voltage reference source that uses reference unit circuit to constitute provides in the circuit, and the high voltage reference source can realize that reference voltage is higher than 36V to KV.
Drawings
Fig. 1 is a circuit diagram of a reference unit according to a first embodiment of the present invention.
Fig. 2 is a circuit diagram of another reference cell according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a reference unit circuit and a high-voltage reference source according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of another reference cell circuit and a high-voltage reference source according to the second embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantageous effects of the present invention more clearly understood, the present invention is further described in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order to explain the technical solution of the present invention, the following description is made by using specific examples.
The first embodiment is as follows:
referring to fig. 1, a first embodiment of the present invention provides a reference cell circuit, including: a transistor Q1, an operational amplifier U1, an internal signal ground F, an internal reference voltage Vref, and an external input reference terminal REF, a CATHODE terminal CATHODE, an ANODE terminal ANODE, and an auxiliary power supply positive terminal VCC; the collector or the drain of the transistor Q1 is opened inside the unit circuit and is connected with the CATHODE terminal CATHODE, the emitter or the source of the transistor Q1 is connected with the negative power terminal 2 of the operational amplifier U1 and the internal signal ground F and is connected with the ANODE terminal ANODE, the base or the gate of the transistor Q1 is connected with the output terminal 4 of the operational amplifier U1, the positive power terminal 5 of the operational amplifier U1 is connected with the positive terminal VCC of the auxiliary power supply, the non-inverting input terminal 1 of the operational amplifier U1 is connected with the external input reference terminal REF, and the internal input reference voltage Vref is connected between the inverting input terminal 3 of the operational amplifier U1 and the internal signal ground F; the collector or drain of the transistor is open inside the cell circuit.
In the first embodiment of the present invention, the transistor Q1 includes a bipolar transistor, a junction field effect transistor, a metal oxide semiconductor field effect transistor, a silicon carbide metal oxide semiconductor field effect transistor, and an insulated gate bipolar transistor.
In the first embodiment of the present invention, the operational amplifier U1 includes a rail-to-rail operational amplifier and a non-rail-to-rail operational amplifier.
In an embodiment of the present invention, the ANODE terminal ANODE and the CATHODE terminal CATHODE are equivalent to an ANODE and a CATHODE of an equivalent zener diode, respectively.
In the first embodiment of the present invention, the reference unit circuit further includes an integrating circuit, a filter circuit, a voltage divider circuit, and a programmable reference integrated circuit U2, the first end of the integrating circuit is connected with the ANODE terminal ANODE, the second end of the integrating circuit is connected with the base electrode or the grid electrode of the transistor Q1, the third end of the integrating circuit is connected with the output end 4 of the operational amplifier U1, the first end of the filter circuit is connected with an internal signal ground F, the second end of the filter circuit is connected with the inverting input end 3 of the operational amplifier U1, the third end of the filter circuit is connected with the first end of the voltage division circuit, the first end of the voltage division circuit is connected with the inverting input end 3 of the operational amplifier U1, the second end of the voltage division circuit is connected with the cathode end and the reference end of the programmable reference integrated circuit U2, the third end of the voltage division circuit is connected with an internal signal ground F, and the anode end of the programmable reference integrated circuit U2 is connected with the internal signal ground F.
In the first embodiment of the present invention, the integrating circuit includes a first resistor R1 and a second capacitor C2, two ends of the first resistor R1 are respectively connected to the output end of the first operational amplifier U1 and the base or gate of the transistor Q1, and two ends of the second capacitor C2 are respectively connected to the ANODE end ANODE and the base or gate of the transistor Q1;
the filter circuit comprises a fourth capacitor C4 and a fifth resistor R5, the voltage divider circuit comprises a third resistor R3 and a fourth resistor R4, one end of the fourth capacitor C4 is connected with a negative power supply end 2 of an operational amplifier U1, the other end of the fourth capacitor C4 is connected with an inverted input end 3 of the operational amplifier U1 and one end of the fifth resistor R5, the other end of the fifth resistor R5 is connected with one end of a third resistor R3 and one end of the fourth resistor R4, the other end of the fourth resistor R4 is connected with a negative power supply end 2 of the operational amplifier U1, and the other end of the third resistor R3 is connected with a cathode end and a reference end of a programmable reference integrated circuit U2.
In the first embodiment of the present invention, the reference unit circuit further includes a third capacitor C3, a second resistor R2 and a sixth resistor R6, one end of the third capacitor C3 and the cathode terminal and the reference terminal of the programmable reference integrated circuit U2, the other end of the third capacitor is connected to the negative power terminal 2 of the operational amplifier U1, one end of the second resistor R2 is connected to the ANODE terminal ANODE, the other end of the second resistor R2 is connected to the emitter or the source of the transistor Q1, and the two ends of the sixth resistor R6 are respectively connected to the positive power terminal 5 of the operational amplifier U1 and the cathode terminal and the reference terminal of the programmable reference integrated circuit U2. Please refer to fig. 2.
In the first embodiment of the present invention, the voltage of the positive terminal VCC of the auxiliary power supply is greater than the reference voltage of the programmable reference integrated circuit U2, and is greater than the emitter junction in-phase voltage or the gate voltage threshold of the transistor Q1.
The working principle is as follows:
an auxiliary power supply positive terminal VCC generates an internal reference voltage through a programmable reference integrated circuit U2, a sixth resistor R6 and a third capacitor C3, the internal reference voltage generates an internal reference voltage at Vref after being subjected to voltage division by R3 and R4 and filtering by R5 and C4, an inverting input terminal 3 of an operational amplifier U1 is connected with the internal reference voltage, a non-inverting input terminal 1 of the operational amplifier U1 is connected with an external reference feedback signal through an external input reference terminal REF, and an output terminal of the operational amplifier U1 is connected with a base or a gate of a transistor Q1 through a first resistor R1 and a second capacitor C2 of an integrating circuit, so that negative feedback is formed between the impedance between a CATHODE terminal CATHODE and an ANODE terminal ANODE and the external reference feedback signal and the internal reference voltage.
Example two:
referring to fig. 3, a second embodiment of the present invention provides a high voltage reference source, which includes the reference unit circuit, a voltage input terminal Vi, a voltage output terminal Vo, a fifth capacitor C5, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, and an eleventh resistor R11, the voltage input end Vi is connected with one end of an eleventh resistor R11, the other end of the eleventh resistor R11 is respectively connected with the voltage output end Vo and a collector or a drain of a transistor Q1, a seventh resistor R7, an eighth resistor R8 and a ninth resistor R9 are sequentially connected in series, two ends of the seventh resistor R7, two ends of the eighth resistor R8 and two ends of the ninth resistor R9 are respectively connected with the voltage output end Vo and a non-inverting input end 1 of an operational amplifier U1, two ends of a tenth resistor R10 are respectively connected with a non-inverting input end 1 and a negative power end 2 of an operational amplifier U1, and two ends of a fifth capacitor C5 are respectively connected with the voltage output end Vo and a negative power end 2 of the operational amplifier U1.
Output voltage Vo=Vref*(R7+R8+R9+R10)/R10。
Example three:
referring to fig. 4, a third embodiment of the present invention provides an adjustable high voltage reference source, where the high voltage reference source includes a voltage input terminal Vi, a voltage output terminal Vo, a fifth capacitor C5, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, and an eleventh resistor R11, the voltage input end Vi is connected with one end of an eleventh resistor R11, the other end of the eleventh resistor R11 is respectively connected with a voltage output end Vo and a collector or a drain of a transistor Q1, a seventh resistor R7, an eighth resistor R8 and a ninth resistor R9 are sequentially connected in series, two ends of the seventh resistor R7, two ends of the eighth resistor R8 and two ends of the ninth resistor R9 are respectively connected with the voltage output end Vo and a non-inverting input end 1 of an operational amplifier U1, two ends of the tenth resistor R10 and two ends of a potentiometer VR1 are respectively connected with a non-inverting input end 1 and a negative power end of an operational amplifier U1, and two ends of a fifth capacitor C5 are respectively connected with the voltage output end Vo and a negative power end 2 of the operational amplifier U1.
Output voltage VoVref (R7+ R8+ R9+ R10+ VR1 adjusted value)/(R10 + VR1 adjusted value)
In the third embodiment of the present invention, the reference unit circuit further includes a potentiometer VR1, and the potentiometer VR1 is connected between the negative power supply terminal 2 of the operational amplifier U1 and the tenth resistor R10.
The embodiment of the present invention provides a circuit in which the withstand voltage of the transistor is higher than the highest reference voltage provided by the adjustable high voltage reference source formed by the reference unit circuit, and the high voltage reference source can realize the reference voltage higher than 36V to KV.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A reference cell circuit, comprising: a transistor Q1, an operational amplifier U1, an internal signal ground F, an internal reference voltage Vref, and an external input reference terminal REF, a CATHODE terminal CATHODE, an ANODE terminal ANODE, and an auxiliary power supply positive terminal VCC; the collector or the drain of the transistor Q1 is opened inside the unit circuit and is connected with the CATHODE terminal CATHODE, the emitter or the source of the transistor Q1 is connected with the negative power supply terminal of the operational amplifier U1 and the internal signal ground F and is connected with the ANODE terminal ANODE, the base or the gate of the transistor Q1 is connected with the output terminal of the operational amplifier U1, the positive power supply terminal of the operational amplifier U1 is connected with the positive terminal VCC of the auxiliary power supply, the non-inverting input terminal of the operational amplifier U1 is connected with the external input reference terminal REF, and the internal input reference voltage Vref is connected between the inverting input terminal of the operational amplifier U1 and the internal signal ground F; the collector or drain of the transistor is open inside the cell circuit.
2. The reference cell circuit of claim 1, wherein the transistor Q1 comprises a bipolar transistor, a junction field effect transistor, a metal oxide semiconductor field effect transistor, a silicon carbide metal oxide semiconductor field effect transistor, and an insulated gate bipolar transistor.
3. The reference cell circuit of claim 1, wherein the operational amplifier U1 comprises a rail-to-rail operational amplifier and a non-rail-to-rail operational amplifier.
4. The reference cell circuit of claim 1, wherein the ANODE terminal ANODE and the CATHODE terminal CATHODE correspond to an ANODE and a CATHODE of an equivalent zener diode, respectively.
5. The reference cell circuit of claim 1, wherein the reference cell circuit further comprises an integrating circuit, a filtering circuit, a voltage divider circuit, and a programmable reference integrated circuit U2, the first end of the integrating circuit is connected with the ANODE terminal ANODE, the second end of the integrating circuit is connected with the base electrode or the grid electrode of the transistor Q1, the third end of the integrating circuit is connected with the output end of the operational amplifier U1, the first end of the filter circuit is connected with an internal signal ground F, the second end of the filter circuit is connected with the inverting input end of the operational amplifier U1, the third end of the filter circuit is connected with the first end of the voltage division circuit, the first end of the voltage division circuit is connected with the inverting input end of the operational amplifier U1, the second end of the voltage division circuit is connected with the cathode end and the reference end of the programmable reference integrated circuit U2, the third end of the voltage division circuit is connected with an internal signal ground F, and the anode end of the programmable reference integrated circuit U2 is connected with the internal signal ground F.
6. The reference cell circuit as claimed in claim 5, wherein the integration circuit comprises a first resistor R1 and a second capacitor C2, the first resistor R1 is connected to the output terminal of the first operational amplifier U1 and the base or gate of the transistor Q1, respectively, and the second capacitor C2 is connected to the ANODE terminal ANODE and the base or gate of the transistor Q1, respectively;
the filter circuit comprises a fourth capacitor C4 and a fifth resistor R5, the voltage divider circuit comprises a third resistor R3 and a fourth resistor R4, one end of the fourth capacitor C4 is connected with a negative power supply end of an operational amplifier U1, the other end of the fourth capacitor C4 is connected with an inverted input end of the operational amplifier U1 and one end of the fifth resistor R5, the other end of the fifth resistor R5 is connected with one end of a third resistor R3 and one end of the fourth resistor R4, the other end of the fourth resistor R4 is connected with a negative power supply end of the operational amplifier U1, and the other end of the third resistor R3 is connected with a cathode end and a reference end of the programmable reference integrated circuit U2.
7. The reference cell circuit of claim 6, further comprising a third capacitor C3, a second resistor R2, and a sixth resistor R6, wherein one terminal of the third capacitor C3 and the cathode terminal and the reference terminal of the programmable reference integrated circuit U2, the other terminal of the third capacitor is connected to the negative power terminal of the operational amplifier U1, one terminal of the second resistor R2 is connected to the ANODE terminal ANODE, the other terminal of the second resistor R2 is connected to the emitter or the source of the transistor Q1, and two terminals of the sixth resistor R6 are respectively connected to the positive power terminal of the operational amplifier U1 and the cathode terminal and the reference terminal of the programmable reference integrated circuit U2.
8. The reference cell circuit of claim 1, wherein the auxiliary power supply positive terminal VCC is at a voltage greater than a reference voltage of the programmable reference integrated circuit U2, greater than an emitter junction forward voltage or a gate voltage threshold of the transistor Q1.
9. A high voltage reference source, comprising the reference cell circuit as claimed in any one of claims 1 to 8, further comprising a voltage input Vi, a voltage output Vo, a fifth capacitor C5, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10 and an eleventh resistor R11, the voltage input end Vi is connected with one end of an eleventh resistor R11, the other end of the eleventh resistor R11 is respectively connected with the voltage output end Vo and a collector or a drain of a transistor Q1, a seventh resistor R7, an eighth resistor R8 and a ninth resistor R9 are sequentially connected in series, two ends of the seventh resistor R7, two ends of the eighth resistor R8 and two ends of the ninth resistor R9 are respectively connected with the voltage output end Vo and a non-inverting input end of an operational amplifier U1, two ends of a tenth resistor R10 are respectively connected with a non-inverting input end and a negative power end of an operational amplifier U1, and two ends of a fifth capacitor C5 are respectively connected with the voltage output end Vo and a negative power end of the operational amplifier U1.
10. An adjustable high voltage reference source, comprising the reference unit circuit as claimed in any one of claims 1 to 8, further comprising a voltage input terminal Vi, a voltage output terminal Vo, a fifth capacitor C5, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11 and a potentiometer VR1, the voltage input end Vi is connected with one end of an eleventh resistor R11, the other end of the eleventh resistor R11 is respectively connected with a voltage output end Vo and a collector or a drain of a transistor Q1, a seventh resistor R7, an eighth resistor R8 and a ninth resistor R9 are sequentially connected in series, two ends of the seventh resistor R7, two ends of the eighth resistor R8 and two ends of the ninth resistor R9 are respectively connected with a voltage output end Vo and a non-inverting input end of an operational amplifier U1, two ends of a tenth resistor R10 and two ends of a potentiometer VR1 are respectively connected with a non-inverting input end and a negative power end of an operational amplifier U1, and two ends of a fifth capacitor C5 are respectively connected with the voltage output end Vo and a negative power end of the operational amplifier U1.
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CN115014506A (en) * | 2022-08-08 | 2022-09-06 | 山西中辐核仪器有限责任公司 | Vibration detection circuit and portable instrument |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115014506A (en) * | 2022-08-08 | 2022-09-06 | 山西中辐核仪器有限责任公司 | Vibration detection circuit and portable instrument |
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