CN214280418U

CN214280418U - Temperature-controllable electro-optical KTP switch

Info

Publication number: CN214280418U
Application number: CN202120542681.XU
Authority: CN
Inventors: 赵修强; 冯骥; 翟娜娜; 周婧
Original assignee: Shandong Chenjing Photoelectric Technology Co ltd
Current assignee: Shandong Chenjing Photoelectric Technology Co ltd
Priority date: 2021-03-16
Filing date: 2021-03-16
Publication date: 2021-09-24
Anticipated expiration: 2031-03-16

Abstract

The utility model discloses a but control by temperature change electro-optic KTP switch, including casing, KTP crystal and single longitudinal mode transfer QND, the casing bottom is provided with the base, casing one side is provided with the temperature control spare, the temperature control spare inboard is provided with the conduction spare, KTP crystal top is provided with the V + layer, KTP crystal below is provided with the V-layer, KTP crystal front and back both sides are provided with analyzer B and analyzer A respectively, KTP crystal inboard shuttles back and forth the laser beam, single longitudinal mode transfer QND11 output end is connected with the GaAs photoconduction switch, GaAs photoconduction switch output end is connected with the spectroscope, the spectroscope output end is connected with rochan biprism A, rochan biprism A output end is connected with the KTP crystal, KTP crystal output end is connected with rochan biprism B and high-voltage electric pulse former, high-voltage electric pulse former output end is connected with the photoconduction switch, the utility model discloses half-wave voltage is low, optics destroys the threshold value height, insertion loss is little.

Description

Temperature-controllable electro-optical KTP switch

Technical Field

The utility model relates to a KTP switch specifically is a but control by temperature change electro-optic KTP switch.

Background

The electro-optical switch is an important unit of a laser system, can be used for selecting a single pulse from a mode locking sequence, can be used for carrying out clipping on a Q-switching pulse, and is also an indispensable element in an electro-optical isolator. The continuous improvement of the performance of the electro-optical switch plays a very key role in improving the success rate and stability of output of a laser system, and reasonably selecting the electro-optical material is one of effective ways for improving the performance of the switch. KDP and LiNbO3 are electro-optic materials that are currently widely used in pockels cells, but they all have drawbacks. The LiNbO3 crystal Pockels cell has low half-wave voltage and is not deliquescent, but the application of the LiNbO3 crystal Pockels cell in a high-peak-power laser system is limited due to the low optical damage threshold of the LiNbO3 crystal Pockels cell, and the application of the LiNbO3 crystal in the high-repetition-rate laser system is complicated due to the acousto-optic effect caused by the piezoelectric effect. The KDP crystal pockels cell has a higher optical damage threshold, but has a relatively higher half-wave voltage and is deliquescent, and when the KDP crystal pockels cell is used, the KDP crystal pockels cell needs to be sealed in a box, an antireflection film and a refractive index matching material are plated on the end face of the KDP crystal pockels cell, so that the insertion loss of a device is further increased.

KTP crystal has unique advantages as a relatively new nonlinear optical material, and has been widely used for infrared laser near 1 μm of intracavity frequency doubling neodymium ion radiation. Previous measurements have shown that KTP crystals also have large electro-optic coefficients and low dielectric constants, have optical damage thresholds an order of magnitude greater than LiNbO3 crystals, are not deliquescent, and have low insertion loss across the transparent band. Therefore, the KTP pockels cell overcomes the defects of the two switches while maintaining the advantages of the two switches. However, KTP is a birefringent crystal and it is critical to compensate for its static birefringence when applying the KTP pockels cell.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a but control by temperature change electro-optic KTP switch to solve the problem that proposes among the above-mentioned background art.

In order to achieve the above object, the utility model provides a following technical scheme: a temperature controllable electro-optical KTP switch comprises a shell, a KTP crystal and a single longitudinal mode QND, the bottom layer of the shell is provided with a base, one side of the shell is provided with a temperature control part, the inner side of the temperature control part is provided with a conduction part, a V + layer is arranged above the KTP crystal, a V-layer is arranged below the KTP crystal, the front side and the rear side of the KTP crystal are respectively provided with a polarization analyzer B and a polarization analyzer A, the inner side of the KTP crystal shuttles laser beams, the output end of the single longitudinal mode QND11 is connected with a GaAs photoconductive switch, the output end of the GaAs photoconductive switch is connected with a spectroscope, the output end of the spectroscope is connected with a Rochon biprism A, the output end of the Rochon biprism A is connected with the KTP crystal, the output end of the KTP crystal is connected with a Rochon biprism B and a high-voltage electric pulse generator, and the output end of the high-voltage electric pulse generator is connected with the GaAs photoconductive switch.

Preferably, the laser beam is respectively shuttled with the analyzer a, the KTP crystal and the analyzer B as polarization and polarization analysis.

Preferably, the polarization directions of the analyzer B and the analyzer A which are placed at two ends of the crystal are mutually orthogonal, the polarization directions and the z axis form an angle of 45 degrees, the crystal is cut perpendicular to the main axis, light propagates along the y direction, the light transmission length is l, and an electric field is applied to the z direction, so that the optical damage threshold of the crystal can be improved.

Preferably, the single longitudinal mode tuning QND is a YLF laser, the operating wavelength is 1.053 μm, a long pulse of about 50ns is output, and the adaptive wavelength is adjusted.

Preferably, the KTP crystal is placed in a temperature control furnace, so that the temperature can be conveniently adjusted, and the measured transmittance is changed along with the temperature.

Preferably, the laser beam is a laser with constant power and a wavelength of 1.053 μm, which meets the experimental wavelength.

Compared with the prior art, the beneficial effects of the utility model are that: the utility model discloses many advantages have been synthesized, for example half-wave voltage is low, optics destroys the threshold value height, insertion loss is little and the unobvious reputation effect that arouses by the piezoelectric effect, is that LiNbO3 and KDP crystal pockels box etc. can't compare. By taking some measures, the KTP Pockels cell can be applied to intracavity Q-switched high-power Nd: YLF laser.

Drawings

Fig. 1 is a structure diagram of the KTP crystal structure of the present invention;

fig. 2 is a structure diagram of the temperature control KTP electro-optical switch of the present invention;

fig. 3 is a block diagram of the operation structure of the present invention.

In the figure: 1-a shell; 2-a base; 3-temperature control; 4-a conductor; a 5-V + layer; 6-V-layer; 7-KTP crystals; 8-a laser beam; 9-analyzer A; 10-analyzer B; 11-single longitudinal mode adjustment QND; 12-GaAs photoconductive switch; 13-a spectroscope; 14-Rochon biprism A; 15-Rochon biprism B; 16-high voltage pulse former.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-3, the present invention provides a technical solution: a temperature-controllable electro-optical KTP switch comprises a shell 1, a KTP crystal 7 and a single longitudinal mode QND11, wherein a base 2 is arranged at the bottom layer of the shell 1, a temperature control element 3 is arranged on one side of the shell 1, a conducting element 4 is arranged on the inner side of the temperature control element 3, a V + layer 5 is arranged above the KTP crystal 7, a V-layer 6 is arranged below the KTP crystal 7, a polarization detector B10 and a polarization detector A9 are respectively arranged on the front side and the rear side of the KTP crystal 7, a laser beam 8 shuttles back and forth on the inner side of the KTP crystal 7, the output end of the single longitudinal mode QND11 is connected with a photoconductive GaAs switch 12, the output end of the photoconductive switch 12 is connected with a spectroscope 13, the output end of the spectroscope 13 is connected with a Rochon biprism A14, the output end of the Rochon biprism A14 is connected with the KTP crystal 7, the output end of the KTP crystal 7 is connected with a Rochon biprism B15 and a high-voltage electric pulse former 16, the output end of the high-voltage electric pulse former 16 is connected with the GaAs photoconductive switch 12.

The laser beam 8 is respectively shuttled with the analyzer a9, the KTP crystal 7 and the analyzer B10 as polarization and polarization analysis. The polarization directions of the polarization analyzer B10 and the polarization analyzer A9 which are arranged at two ends of the crystal are mutually orthogonal, the polarization directions and the z axis form an angle of 45 degrees, the crystal is cut perpendicular to the main axis, light propagates along the y direction, the light passing length is l, and an electric field is applied to the z direction, so that the optical damage threshold of the crystal can be improved. The single longitudinal mode modulation QND11 is a YLF laser, the working wavelength is 1.053 mu m, a long pulse of about 50ns is output, and the adaptive wavelength is adjusted. The KTP crystal 7 is placed in a temperature control furnace, so that the temperature can be conveniently adjusted, and the measured transmittance is changed along with the temperature. The laser beam 8 is a laser with constant power and a wavelength of 1.053 μm, and meets the experimental wavelength.

The working principle is as follows: the utility model discloses single longitudinal mode transfers QND11 for YLF laser instrument, and operating wavelength 1.053 mu m, the output is about 50 ns's long pulse, Rochon biprism A14 and Rochon biprism B15, as polarizing and analyzing respectively, KTP crystal 7 is arranged in the control by temperature change stove, GaAs photoconduction switch 12, high-voltage electric pulse former 16 output shaping electric pulse can suitably postpone to the range is adjustable. After the GaAs photoconductive switch 12 receives the optical signal reflected from the beam splitter 13, the GaAs photoconductive switch 12 is turned on, and outputs an electric pulse having a shape identical to that of the optical pulse, but only when the amplitude of the electric pulse is greater than a predetermined value, the GaAs photoconductive switch 12 is triggered to generate a high-voltage electric pulse to drive the KTP pockels cell to perform chopping and shaping, and by temperature control, static birefringence compensation of the crystal is realized, and the compensation is successfully applied to the chopping of the Q-switched pulse.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A but temperature control electro-optic KTP switch which characterized in that: the optical fiber laser comprises a shell (1), a KTP crystal (7) and a single longitudinal mode QND (11), wherein a base (2) is arranged at the bottom layer of the shell (1), a temperature control element (3) is arranged on one side of the shell (1), a conducting element (4) is arranged on the inner side of the temperature control element (3), a V + layer (5) is arranged above the KTP crystal (7), a V-layer (6) is arranged below the KTP crystal (7), a polarization analyzer B (10) and a polarization analyzer A (9) are respectively arranged on the front side and the rear side of the KTP crystal (7), a laser beam (8) shuttles back and forth on the inner side of the KTP crystal (7), the output end of the single longitudinal mode QND (11) is connected with a GaAs photoconductive switch (12), the output end of the GaAs photoconductive switch (12) is connected with a spectroscope (13), the output end of the spectroscope (13) is connected with a Hungar biprism A (14), the output end of the Lu, the output end of the KTP crystal (7) is connected with a Rochon biprism B (15) and a high-voltage electric pulse former (16), and the output end of the high-voltage electric pulse former (16) is connected with the GaAs photoconductive switch (12).

2. A temperature controllable electro-optical KTP switch according to claim 1, characterized in that: the laser beam (8) is respectively shuttled with the analyzer A (9), the KTP crystal (7) and the analyzer B (10).

3. A temperature controllable electro-optical KTP switch according to claim 1, characterized in that: the polarization directions of the analyzer B (10) and the analyzer A (9) placed at both ends of the crystal are orthogonal to each other, and the polarization directions are both at an angle of 45 DEG to the z-axis.

4. A temperature controllable electro-optical KTP switch according to claim 1, characterized in that: the single longitudinal mode QND (11) is a YLF laser, the working wavelength is 1.053 mu m, and the output is a long pulse of about 50 ns.

5. A temperature controllable electro-optical KTP switch according to claim 1, characterized in that: the KTP crystal (7) is placed in a temperature control furnace.

6. A temperature controllable electro-optical KTP switch according to claim 1, characterized in that: the laser beam (8) is a laser with constant power and a wavelength of 1.053 mu m.