CN214279955U - High-power MOS pipe packaging structure - Google Patents
High-power MOS pipe packaging structure Download PDFInfo
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- CN214279955U CN214279955U CN202023124225.8U CN202023124225U CN214279955U CN 214279955 U CN214279955 U CN 214279955U CN 202023124225 U CN202023124225 U CN 202023124225U CN 214279955 U CN214279955 U CN 214279955U
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Abstract
A high-power MOS tube packaging structure is characterized by comprising a mounting seat, wherein the mounting seat is arranged on a circuit board, a mounting cover plate is arranged on the mounting seat, a positioning block and a telescopic rod are arranged in the mounting seat, the top of the telescopic rod is connected with a fixed pressing plate, and an MOS tube is arranged at the positioning block; the mounting cover plate is provided with a first heat dissipation plate, the end portion of the mounting cover plate is provided with a fixing mechanism and a limiting block, the fixing mechanism is provided with a second sliding rod, the second sliding rod is provided with a sliding block and a second spring, the sliding block is provided with a first sliding rod in a penetrating mode, the first sliding rod is perpendicular to the second sliding rod, the end portion of the first sliding rod is sleeved with a clamping block, the first sliding rod is provided with a first spring, and the first spring is arranged between the sliding block and the clamping block. The utility model discloses a fixed MOS pipe of locating piece and fixed pressing plate in the mount pad, the mount pad with fixed establishment easy to assemble in the installation apron and the MOS pipe of replacement encapsulation.
Description
Technical Field
The utility model relates to a MOS manages technical field, especially relates to a high-power MOS manages packaging structure.
Background
The MOS transistor is a metal-oxide-semiconductor (semiconductor) field effect transistor or a metal-insulator-semiconductor (insulator).
In the prior art, most of the semiconductor transistors are fixed on the circuit board by means of soldering. But the welding takes time on the mainboard, and can lead to the fact owing to vibrations after the welding to rock, leads to MOS pipe to receive the influence steadily. Meanwhile, when the MOS tube breaks down, the replacement of the MOS tube is complicated.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the defects of the prior art and providing a high-power MOS tube packaging structure.
A high-power MOS tube packaging structure is characterized by comprising a mounting seat, wherein the mounting seat is arranged on a circuit board, a mounting cover plate is arranged on the mounting seat, a positioning block and a telescopic rod are arranged in the mounting seat, the top of the telescopic rod is connected with a fixed pressing plate, and an MOS tube is arranged at the positioning block;
the mounting cover plate is provided with a first heat dissipation plate, the end portion of the mounting cover plate is provided with a fixing mechanism and a limiting block, the fixing mechanism is provided with a second sliding rod, the second sliding rod is provided with a sliding block and a second spring, the sliding block is provided with a first sliding rod in a penetrating mode, the first sliding rod is perpendicular to the second sliding rod, the end portion of the first sliding rod is sleeved with a clamping block, the first sliding rod is provided with a first spring, and the first spring is arranged between the sliding block and the clamping block.
Preferably, a heat dissipation convex block is arranged on one side of the first heat dissipation plate, the heat dissipation convex block penetrates out of the top of the installation cover plate, and a pressing block is arranged on the other side of the first heat dissipation plate and abuts against the fixed pressing plate.
Preferably, a groove is formed in the side edge of the top of the fixed pressing plate, and the pressing block is embedded in the groove.
Preferably, an opening is formed in one end of the mounting seat, a pin of the MOS tube in the MOS tube penetrates out of the opening, the pin is embedded in the connection socket of the circuit board, and the pin is connected with a connection port in the connection socket.
Preferably, the fixture block is of a U-shaped structure, the length of the upper side rod of the fixture block is larger than that of the lower side rod of the fixture block, the mounting seat is provided with a fixed sliding groove, the mounting cover plate is provided with a shifting groove, the upper side rod of the fixture block is embedded in the shifting groove, and the lower side rod of the fixture block is embedded in the fixed sliding groove.
Preferably, a second heat dissipation plate is arranged at the top of the MOS tube, the second heat dissipation plate is connected with the first heat dissipation plate through a fixing pressing plate, and the fixing pressing plate is made of a heat conduction material.
Preferably, the mounting base is provided with a connecting lug, and the mounting cover plate is connected with the mounting base through the connecting lug.
The utility model has the advantages that:
the positioning block in the mounting seat enables the packaged MOS tube to be positioned and fixed in the mounting seat, and the fixed pressing plate presses the packaged MOS tube, so that the stability of the packaged MOS tube is improved; the end part of the mounting cover plate is provided with a fixing mechanism to facilitate maintenance or replace the packaged MOS tube.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, together with the description of embodiments of the invention, and are not intended to limit the invention. In the drawings:
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a right side view of the structure of the present invention;
FIG. 3 is a left side view of the structure of the present invention;
FIG. 4 is a schematic diagram of a MOS transistor structure;
FIG. 5 is an enlarged view of circle A in FIG. 1;
labeled as: 1-a circuit board, 2-a mounting base, 3-a mounting cover plate, 4-a first heat dissipation plate, 5-a pressing block, 6-a fixed sliding groove, 7-a limiting block, 8-a clamping block, 9-a toggle groove, 10-a positioning block, 11-a telescopic rod, 12-a connecting lug, 13-a fixed pressing plate, 14-a connecting socket, 15-a connecting port, 16-an opening, 17-a first sliding rod, 18-a first spring, 19-a second sliding rod, 20-a sliding block, 21-an MOS (metal oxide semiconductor) tube, 22-a second heat dissipation plate and 23-a second spring.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
According to the drawings of fig. 1 to 5, a high-power MOS tube packaging structure comprises a mounting base 2, the mounting base 2 is arranged on a circuit board 1, a mounting cover plate 3 is arranged on the mounting base 2, a positioning block 10 and a telescopic rod 11 are arranged in the mounting base 2, the top of the telescopic rod 11 is connected with a fixed pressing plate 13, and a MOS tube 21 is arranged at the positioning block 10;
the mounting cover plate 3 is provided with a first heat dissipation plate 4, the end portion of the mounting cover plate 3 is provided with a fixing mechanism and a limiting block 7, the fixing mechanism is provided with a second sliding rod 19, the second sliding rod 19 is provided with a sliding block 20 and a second spring 23, the sliding block 20 is provided with a first sliding rod 17 in a penetrating mode, the first sliding rod 17 is perpendicular to the second sliding rod 19, the end portion of the first sliding rod 17 is sleeved with a clamping block 8, the first sliding rod 17 is provided with a first spring 18, and the first spring 18 is arranged between the sliding block 20 and the clamping block 8.
One side of the first heat dissipation plate 4 is provided with a heat dissipation convex block, the heat dissipation convex block penetrates out of the top of the installation cover plate 3, the other side of the first heat dissipation plate 4 is provided with a pressing block 5, and the pressing block 5 abuts against a fixed pressing plate 13.
One end of the mounting seat 2 is provided with an opening 16, a pin of the MOS transistor in the MOS transistor 21 penetrates out from the opening 16, the pin is embedded in the connection socket 14 of the circuit board 1, and the pin is connected with the connection port 15 in the connection socket 14.
The mount pad 2 is equipped with fixed spout 6, and installation apron 3 is equipped with stirs groove 9, and the upside pole of fixture block 8 inlays in stirring groove 9, and the downside pole of fixture block 8 inlays in fixed spout 6.
The working principle is as follows: the fixture block 8 is moved along the toggle groove 9, and the fixture block 8 is moved along the second slide bar 19 through the first slide bar 17 and the upper slide block 20 sleeved on the first slide bar 17, and simultaneously the second spring 23 is compressed.
When the fixture block 8 reaches the end of the toggle groove 9, the fixture block 8 is separated from the limited block 7 to be in a propping state, the fixture block 8 is pressed inwards along the first sliding rod 17, and meanwhile, the first spring 18 is compressed. The mounting cover plate 3 is rotated and opened around the connecting convex block 12, meanwhile, the pressing block 5 arranged on the first heat dissipation plate 4 on the mounting cover plate 3 rises, and the telescopic rod 11 is unfolded to drive the fixed pressing plate 13 to rise.
The MOS tube 21 is placed in the mounting seat 2, and the MOS tube 21 is placed at the positioning block 10. The rotary mounting cover plate 3 is closed, the pressing block 5 arranged on the first heat dissipation plate 4 on the mounting cover plate 3 descends in a rotating mode, and the pressing block 5 presses the fixed pressing plate 13 downwards until the mounting cover plate 3 resets.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A high-power MOS tube packaging structure is characterized by comprising a mounting seat, wherein the mounting seat is arranged on a circuit board, a mounting cover plate is arranged on the mounting seat, a positioning block and a telescopic rod are arranged in the mounting seat, the top of the telescopic rod is connected with a fixed pressing plate, and an MOS tube is arranged at the positioning block;
the mounting cover plate is provided with a first heat dissipation plate, the end portion of the mounting cover plate is provided with a fixing mechanism and a limiting block, the fixing mechanism is provided with a second sliding rod, the second sliding rod is provided with a sliding block and a second spring, the sliding block is provided with a first sliding rod in a penetrating mode, the first sliding rod is perpendicular to the second sliding rod, the end portion of the first sliding rod is sleeved with a clamping block, the first sliding rod is provided with a first spring, and the first spring is arranged between the sliding block and the clamping block.
2. The package structure of a high power MOS transistor according to claim 1, wherein a heat dissipation protrusion is disposed on one side of the first heat dissipation plate, the heat dissipation protrusion protrudes out from the top of the mounting cover plate, and a pressing block is disposed on the other side of the first heat dissipation plate, and the pressing block abuts against the fixing pressing plate.
3. The high power MOS transistor package structure of claim 2, wherein a top side of the fixed pressing plate is provided with a groove, and the pressing block is embedded in the groove.
4. The package structure of a high power MOS transistor according to claim 1, wherein an opening is formed at one end of the mounting base, and pins of the MOS transistor in the MOS transistor extend out of the opening, the pins are embedded in a connection socket of the circuit board, and the pins are connected to connection ports in the connection socket.
5. The package structure of a high power MOS transistor according to claim 1, wherein the fixture block has a U-shaped structure, the length of the upper rod of the fixture block is greater than the length of the lower rod of the fixture block, the mounting seat has a fixed sliding groove, the mounting cover plate has a toggle groove, the upper rod of the fixture block is embedded in the toggle groove, and the lower rod of the fixture block is embedded in the fixed sliding groove.
6. The package structure of a high power MOS transistor according to claim 1, wherein a second heat sink is disposed on a top of the MOS transistor, the second heat sink is connected to the first heat sink through a fixing clamp, and the fixing clamp is made of a heat conductive material.
7. The package structure of claim 1, wherein the mounting base has a connection bump thereon, and the mounting cover is connected to the mounting base through the connection bump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023124225.8U CN214279955U (en) | 2020-12-22 | 2020-12-22 | High-power MOS pipe packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023124225.8U CN214279955U (en) | 2020-12-22 | 2020-12-22 | High-power MOS pipe packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214279955U true CN214279955U (en) | 2021-09-24 |
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ID=77800754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023124225.8U Active CN214279955U (en) | 2020-12-22 | 2020-12-22 | High-power MOS pipe packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214279955U (en) |
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2020
- 2020-12-22 CN CN202023124225.8U patent/CN214279955U/en active Active
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