CN214152901U - Vertical charge transfer type photon demodulator - Google Patents
Vertical charge transfer type photon demodulator Download PDFInfo
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- CN214152901U CN214152901U CN202023311672.4U CN202023311672U CN214152901U CN 214152901 U CN214152901 U CN 214152901U CN 202023311672 U CN202023311672 U CN 202023311672U CN 214152901 U CN214152901 U CN 214152901U
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- 238000000034 method Methods 0.000 abstract description 13
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- 206010070834 Sensitisation Diseases 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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CN202023311672.4U CN214152901U (en) | 2020-12-30 | 2020-12-30 | Vertical charge transfer type photon demodulator |
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CN202023311672.4U CN214152901U (en) | 2020-12-30 | 2020-12-30 | Vertical charge transfer type photon demodulator |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114497099A (en) * | 2022-01-17 | 2022-05-13 | 南京大学 | Photosensitive detector based on composite dielectric grid photoconduction and working method thereof |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114497099A (en) * | 2022-01-17 | 2022-05-13 | 南京大学 | Photosensitive detector based on composite dielectric grid photoconduction and working method thereof |
CN114497099B (en) * | 2022-01-17 | 2024-10-22 | 南京大学 | Photosensitive detector based on composite dielectric grating photoconduction and working method thereof |
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Effective date of registration: 20220615 Address after: Room 801, building 9, No.100 Tianjiao Road, Qilin hi tech Industrial Development Zone, Jiangning District, Nanjing City, Jiangsu Province, 211100 Patentee after: Nanjing Weipaishi Semiconductor Technology Co.,Ltd. Patentee after: Nanjing University Address before: Room 801, building 9, No.100 Tianjiao Road, Qilin hi tech Industrial Development Zone, Jiangning District, Nanjing City, Jiangsu Province, 211100 Patentee before: Nanjing Weipaishi Semiconductor Technology Co.,Ltd. |
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Effective date of registration: 20240724 Address after: No.163 Xianlin Avenue, Qixia District, Nanjing City, Jiangsu Province, 210000 Patentee after: NANJING University Country or region after: China Address before: Room 801, building 9, No.100 Tianjiao Road, Qilin hi tech Industrial Development Zone, Jiangning District, Nanjing City, Jiangsu Province, 211100 Patentee before: Nanjing Weipaishi Semiconductor Technology Co.,Ltd. Country or region before: China Patentee before: NANJING University |