CN214115702U - Combined magnetic field and filtering device with composite lining bias stepped pipe and porous baffle - Google Patents

Combined magnetic field and filtering device with composite lining bias stepped pipe and porous baffle Download PDF

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CN214115702U
CN214115702U CN201822274434.7U CN201822274434U CN214115702U CN 214115702 U CN214115702 U CN 214115702U CN 201822274434 U CN201822274434 U CN 201822274434U CN 214115702 U CN214115702 U CN 214115702U
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magnetic field
power supply
bias
arc
movable coil
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魏永强
王好平
张华阳
刘源
侯军兴
蒋志强
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Abstract

The invention discloses a filtering device combining a combined magnetic field, a lining bias stepped pipe and a porous baffle, belongs to the technical field of surfaces, and aims to solve the problems of pollution of large particles in a multistage magnetic field filtering device to a film and loss in a plasma transmission process. The apparatus of the present invention comprises: bias power supply, arc ion plating target source, multistage magnetic field device and lining biasThe device comprises a combination device of a pressing stepped pipe and a porous baffle, a movable coil device, a corresponding power supply, a sample stage, a bias power supply waveform oscilloscope and a vacuum chamber; and (3) thin film deposition: connecting devices, starting system, and maintaining vacuum degree in vacuum chamber to be less than 10‑4When Pa is needed, working gas is introduced, a coating power supply is started, the energy of the arc plasma is adjusted by using a bias power supply, the large particle defect in the arc plasma is eliminated and the transmission efficiency of the filtering device is improved by using the lining bias stepped pipe, the porous baffle plate combination device and the multistage magnetic field device, the loss in the vacuum chamber is reduced, and the film preparation is carried out by setting process parameters.

Description

Combined magnetic field and filtering device with composite lining bias stepped pipe and porous baffle
Technical Field
The invention relates to a filtering device combining a combined magnetic field, a lining bias stepped pipe and a porous baffle, belonging to the technical field of material surface treatment.
Background
In the process of preparing the film by arc ion plating, the current density of arc spots is as high as 2.5-5 multiplied by 1010A/m2The molten liquid metal, which is caused to appear at the location of the arc spot on the target surface, is sprayed out in the form of droplets under the action of the local plasma pressure, adheres to the surface of the film or is embedded in the film to form "large particle" (Macroparticles) defects (Boxman R L, gold limit s. Macroparticle contact in lateral coatings: generation, transport and control J]Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, the number of electrons reaching the surface of a large particle per unit time is larger than that of ions because the moving speed of electrons is much larger than that of ions, so that the large particle is negatively charged. With dimensions of 0.1-10 microns large relative to micron or submicron film thicknessParticle defects, like PM2.5 pollution of air quality, are a serious detriment to the quality and performance of the film. With the increasingly wide application of thin film materials and thin film technologies, the problem of large particle size defect is solved or not, which becomes the bottleneck of further development of the arc ion plating method, and the application of the arc ion plating method in the preparation of new generation thin film materials is severely restricted.
At present, in order to solve the problem that the arc ion plating method is prone to generate large grain defects when using pure metal or multi-element alloy materials with low melting points, magnetic filtration is mainly adopted to filter out large grains, such as the ceramic material prepared by the Plasma immersion ion implantation device (publication number: CN1150180, published date: 1997 5, 21) in Chinese patent, and the ceramic material prepared by the method is mainly prepared by filtering large grains of pulsed cathode arc by using a 90-degree magnetic filtration bent pipe, American scholars et al (Anders S, Anders A, Dickinson M R, Macgill R A, Brown I G. S-shaped magnetic macroparametric filter for catalytic deposition [ J ]. IEEE Trans Plasma Sci, 1997, 25(4): 670-674.) and Zhan-Nannan university (Zhang Jane Jue, Wu-Shi et al. magnetic filtration Plasma Weiwei et al. the influence of deposition conditions on the non-ferrous metal texture film in Zhan Yu Ju, Zhang Weiwei et al. magnetic filtration Plasma preparation film, 1264- & 1268.) in the article, "S" magnetic filter elbows were made to filter large particles of cathode arcs, and magnetic filtration of Twist filters proposed by American scholars et al (Anders A, MacGill R A. Twist filters for the removal of macro particles from the cathode plasma [ J ]. Surf Coat Tech, 2000, 133- & 134: 96-100.), and Dehua at Shanghai traffic university proposed adjustable open single-and dual-channel electromagnetic coil filters (D; Shanghai traffic university, 2009), which, although effective in filtering and eliminating large particles, have a significant loss in plasma transport efficiency and greatly reduced ion flux density. On the basis of filtering large particles and guaranteeing the efficiency, a straight tube filtering method is proposed in a vacuum cathode arc straight tube filter (publication number: CN1632905, published: 6/29/2005) in China patent, but the filtering effect is reduced. In summary, relevant researchers found by comparing various magnetic filtration methods (Anders A. Applicheches to red catalytic array of macro-and nanoparticles: a Review [ J ]. Surf Coat Tech, 1999, 120-. In addition, a bias electric field suppression method is adopted on the substrate, and when negative bias is applied on the substrate, the electric field can generate repulsion action on negatively charged large particles, so that the generation of large particle defects on the surface of the thin film is reduced. Olbrich et al (Olbrich W, Fessmann J, Kampschult G, Ebberenk J. Improved control of TiN coating properties using a pulsed bias with a pulsed bias [ J ]. Surf COAT Tech, 1991, 49(1-3): 258) 262. and Fessmann J, Olbrich W, Kampschult G, Ebberenk J. capacitive deposition of TiN and Zr (C, N) at low substrate pulsed bias [ J ]. Mat Sci Eng A, 1991, 140: 830.) use of pulsed bias instead of conventional DC bias to form a new technology of pulsed bias ion plating, which not only greatly reduces the surface temperature of large particles but also overcomes the high temperature of the substrate, the internal stress of the film is large, and the like. The theory of influence of bias voltage on the surface morphology of an arc ion plating film [ J ]. Metallurgical Proc, 2003, 39(5): 510) is deeply analyzed aiming at the mechanism of large particle defect reduction caused by pulse bias voltage, and the sheath movement characteristic of arc plasma can be improved, the number of large particle defects on the surface of the film can be reduced, the quality of the film can be improved, the method is widely applied to actual production, but the large particle defects can not be completely eliminated. The domestic scholars (Weiyongqiang, Zongya, Jiangqiang, Wenxianghua, Chengjibifiang, the arc ion plating method combining the magnetic filtration and the pulse bias voltage of the multistage magnetic field straight tube, the publication number is CN103276362A, the publication date is 9, 4 days in 2013) put forward the arc ion plating method combining the magnetic filtration and the pulse bias voltage of the multistage magnetic field straight tube, the large particle defect is eliminated and the transmission efficiency of the plasma is improved through the multistage magnetic field filtering device, however, the problem of contamination of the inner wall of the tube and the loss of plasma on the inner wall of the tube are not well solved, and later-stage related scholars (Weiyongqiang, dawn Asia, Hou army, Liu source, Liu scholarly, Jiangqiang, Yihan Luo. the multistage magnetic field arc ion plating method of the liner bias straight tube, publication No. CN105925940A, published date: 2016, 9/7) proposed the multistage magnetic field arc ion plating method of the liner bias straight tube to solve the problem of contamination of the inner wall of the tube. The scholars also adopt a double-layer baffle device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride films disposed by a new shield disposed in the deposition [ J ] Appl Surf Sci, 2011, 257(13): 5694-. There are also researchers (Zhang, Hou Junda, Liu Shi, Zhang Ying Smart, magnetic filtration cathode arc plasma source and its film preparation [ J ]. Chinese surface engineering, 2002, 02): 11-15+ 20-12.) refer to the method of Bilek plate (Bilek M M M, Yin Y, McKenzie D R, Mille W I A M W I. Ion transport mechanism in a Filtered Catalytic Vacuum Arc (FCVA) system [ C ]. Proceedings of the channels and electric Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIII International Symposium on, 1996: 962:. 966), and positive bias is applied to the bend of the 90 degree bend magnetic filter device to improve the plasma transmission efficiency.
Disclosure of Invention
The invention aims to solve the problems that the traditional arc ion plating method adopts a high-melting-point target material, a low-melting-point pure metal or multi-element alloy material and a non-metal material (such as graphite) as the target material and is easy to generate large-particle defects, the transmission efficiency of arc plasma is low due to a bending magnetic filtration technology, the use of target material elements is limited, the target material is uniformly ablated, the deposition density and the defects of a film are overcome, the space and the deposition position of a vacuum chamber are limited, the shape of a workpiece is limited, the film component pollution is caused by the secondary sputtering of residues of different target materials in a multi-stage magnetic field device, and the like, the large-particle defects contained in the arc plasma are eliminated by combining a multi-stage magnetic field filtration method, a mechanical blocking shield of the shape of a lining bias stepped tube and a porous baffle plate combination device and the combined action of a bias electric field attraction, and the arc plasma is ensured to pass through the lining bias stepped tube and the porous baffle plate combination device and the multi-stage magnetic field filtration device at the higher transmission efficiency, then the movable coil device is used for controlling the transmission direction of the arc plasma transmitted from the multistage magnetic field device and the lining bias stepped pipe and porous baffle plate combined device in the vacuum chamber, realizing the control and regulation of the film deposition and the film components on the surface of the substrate workpiece at any position in the vacuum chamber, overcoming the problem of uneven film deposition caused by the limitation of the deposition position or the limitation of the substrate shape caused by the space and target source layout design of the vacuum chamber, thoroughly eliminating the defect of large particles possibly remaining in the arc plasma transmitted from the multistage magnetic field device and the lining bias stepped pipe and porous baffle plate combined device, regulating the ion energy on the surface of the workpiece under the condition of applying negative bias, preparing a continuous and compact high-quality film, simultaneously realizing the control of adding the target element content in the film, reducing the production cost of using an alloy target, improving the transmission efficiency of the arc plasma, The deposition speed of the film is increased, and the adverse effects of large particle defects on the microstructure, continuous compact deposition and service performance of the film are reduced or even eliminated, and the filtering device combining the magnetic field and the lining bias stepped pipe and the porous baffle is provided.
The device used by the invention comprises a bias voltage power supply (1), an arc power supply (2), an arc ion plating target source (3), a multistage magnetic field device (4), a multistage magnetic field power supply (5), a lining bias voltage stepped tube and porous baffle plate combined device (6), a lining bias voltage power supply (7), a movable coil device (8), a movable coil device power supply (9), a rheostat device (10), a sample table (11), a bias voltage power waveform oscilloscope (12) and a vacuum chamber (13);
in the device:
a matrix workpiece to be processed is arranged on a sample table (11) in a vacuum chamber (13), a multi-stage magnetic field device (4), a lining bias stepped pipe and porous baffle plate combined device (6), a movable coil device (8) and the vacuum chamber (13) are mutually insulated, the workpiece is arranged on the sample table (11), the sample table (11) is connected with the negative electrode output end of a bias power supply (1), an arc ion plating target source (3) is arranged on the vacuum chamber (13) and connected with the negative electrode output end of an arc power supply (2), each stage of magnetic field of the multi-stage magnetic field device (4) is connected with each output end of a multi-stage magnetic field power supply (5), the positive and negative connection method can be determined according to the direction of an output magnetic field, the lining bias stepped pipe and porous baffle plate combined device (6) is connected with the positive electrode output end of a lining bias power supply (7), the movable coil device (8) is connected with a movable coil device power supply (9) through the positive and negative electrode input ends on a flange port, the rheostat device (10) is connected with the movable coil device (8) in series and is connected into a loop of a power supply (9) of the movable coil device, and a power supply master control switch and an external water-cooling circulating system are started;
and (3) thin film deposition: the vacuum chamber (13) is vacuumized, and the vacuum degree in the vacuum chamber (13) is less than 10-4When Pa is needed, working gas is introduced to 0.01-10 Pa, the bias power supply (1) and the bias power waveform oscilloscope (12) are started, the bias power supply (1) can be direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse bias, the output bias amplitude, pulse frequency and pulse width are adjusted, the peak voltage value of the output pulse of the bias power supply (1) is 0-1.2 kV, the pulse frequency is 0 Hz-80 kHz, the pulse width is 1-90%, the working current is 0-400A, and the maximum output power is 200 kW;
starting an arc power supply (2), cleaning the surface of an arc ion plating target source (3) through arc spot movement of an electric arc, and adjusting required process parameters, wherein the current value output by the arc power supply (2) is 10-300A, and the maximum output power is 12 kW;
the multistage magnetic field device (4) is adjusted through the multistage magnetic field power supply (5), arc plasma is kept to be stably generated in the arc ion plating target source (3) and large particle defects are filtered and eliminated, the ablation uniformity of a target material is guaranteed, the utilization efficiency of the target material is improved, the arc plasma passes through the multistage magnetic field device (4) with high transmission efficiency, the multistage magnetic field device (4) adopts a red copper wire with an insulated surface, the diameter and the number of turns of the wire are determined according to passing current and magnetic field strength, the multistage magnetic field power supply (5) supplies power to magnetic fields at all levels respectively and independently, the independent adjustment of the magnetic fields at all levels is realized, and after the structure of the device is determined, the directions and the strengths of the magnetic fields at all levels output by the multistage magnetic field device (4) are adjusted through output current of the multistage magnetic field power supply (5);
the inner lining bias stepped pipe and porous baffle plate combined device (6) can be matched with the multi-stage magnetic field device (4) to design the outer diameter of the stepped pipe, the type and size of a hole in the porous baffle plate and the distance between the baffle plates, the structure of the stepped pipe can be matched with the multi-stage magnetic field device (4) to design the structures, gradient difference and inlet and outlet layouts of 2-stage stepped pipes, 3-stage stepped pipes or 4-stage and above stepped pipes, the stepped pipes and the baffle plates are fixedly connected, and the stepped pipe and the baffle plates are fixedly connected and positioned through bolts and nuts of non-magnetic stainless steel; the lining bias stepped pipe and porous baffle plate combined device (6) and the multi-stage magnetic field device (4) are movably and insulatively assembled together, the outer diameter of the porous baffle plate and the inner diameter of the stepped pipe are mutually matched and are assembled and connected together through a non-magnetic stainless steel rivet, the lining bias stepped pipe and the porous baffle plate combined device (6) can be detached, cleaned and installed in time according to the surface pollution degree, the problems that the inner wall of the pipe of the multi-stage magnetic field device (4) is polluted and is difficult to clean under the condition without a lining plate are avoided, and the pollution of thin film components caused by the secondary sputtering of the pollutants of the lining baffle plate after the target material is replaced can be effectively; the space between the porous baffles in the lining bias stepped pipe and porous baffle combination device (6) is matched with the lengths of all levels of magnetic fields of the multistage magnetic field device (4) and the outlets of all levels of stepped pipes, and the lengths of the stepped pipesHThe length of the stepped pipe is the same as that of the multistage magnetic field device (4), and the inner diameter of the stepped pipe at the right inlet isD IntoIs larger than the outer diameter of the arc ion plating target source (3) and smaller than the inner diameter of the multistage magnetic field device (4), the porous baffle plate can be matched with the size, the baffle plate interval and the structural combination of the stepped pipe design baffle plate, and the inner diameter of the outlet at the left side of the stepped pipeD Go outThe size and the type of the aperture in the porous baffle and the structural combination of each stage of baffle are selected according to different targets and process parameters, and the mechanical blocking and shielding of large particles can be realized through the inner diameter change at the inlet and the outlet of the stepped pipe and the structural combination of the baffles;
the materials of the multistage magnetic field device (4) and the lining bias stepped pipe and porous baffle plate combined device (6) are selected from a non-magnetic and cleaning-resistant 304 stainless steel material, the length, the inner diameter, the outer diameter, the thickness, the number of turns of a magnetic field and the direction of the multistage magnetic field device (4) are determined according to the diameter, cooling and transmission distance of a target material, the outer diameter of the stepped pipe is determined according to the inner diameter of the multistage magnetic field device (4) by the lining bias stepped pipe and porous baffle plate combined device (6), the proper thickness is selected according to the length and rigidity of the stepped pipe, the outer diameter of the porous baffle plate is matched with the inner diameter of the stepped pipe, the proper thickness, the size and the type of the pore diameter and the structural layout of each stage of baffle plate are selected according to the requirements, and the processing is carried out according to actual design parameters;
the liner bias power supply (7) is started, the liner bias stepped pipe and the porous baffle plate combined device (6) keeps direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse bias, wherein the single pulse, multi-pulse or bipolar pulse bias type can adjust the pulse frequency, the pulse width and the pulse type, the adjustment of the output voltage ensures that the liner bias stepped pipe and the porous baffle plate combined device (6) attract large particles, repel deposited ions, reduce the loss of the arc plasma in the transmission process in the pipe, reduce or even eliminate the defect of the large particles in the arc plasma, improve the transmission efficiency of the arc plasma and the deposition speed of a film, the voltage parameter of the liner bias power supply (7) is-200 to +200V, and is a direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse power supply, the pulse type can adjust the pulse frequency, the pulse width and the pulse type, and the periodic or continuous and stable attraction is generated to the large particle defects in the deposition process, so that the probability that the large particles pass through the multistage magnetic field device (4) and the lining bias stepped pipe and porous baffle plate combined device (6) is greatly reduced;
the power supply (9) of the movable coil device is started, the input current of the movable coil device (8) is adjusted, the adjustment of the magnetic field direction and the magnetic field intensity is realized, the adjustment of the number of coil turns, the coil distance, the shape, the transmission path and the like of the movable coil device (8) is used for controlling the arc plasma transmitted from the multistage magnetic field device (4) and the lining bias stepped pipe and porous baffle plate combined device (6), the shape of the movable coil device is matched with the layout and the direction of magnetic force lines of the magnetic field, the movable coil can be in a classic 90-degree bending type, and can also be in a linear, bending and linear combination (the magnetic force lines of the linear part are tangent and intersected with the magnetic force lines of the bending part), a linear and linear combination (the magnetic force lines of the two linear parts are intersected), a linear, an arc and linear combination (the three-section is intersected and tangent combination) and an arc, The combination of a straight line and an arc (the tangent and the intersection of the straight line and the arc) and other typical coil structure combinations, wherein the arc and the straight line part are determined according to the requirements of space positions and transmission paths, so that the arc and the straight line part reach the surface of a substrate with higher transmission efficiency to carry out the rapid deposition of a thin film; the rheostat device (10) adjusts output resistance, positive bias voltage change on the movable coil device (8) is realized, an electric field generated by the positive bias voltage can realize attraction of electrons and residual large particles in the arc plasma transmitted from the multistage magnetic field device (4) and the lining bias voltage stepped pipe and porous baffle plate combined device (6), so that the ion number of the arc plasma output from the movable coil device (8) is increased, the transmission efficiency of the arc plasma in the movable coil device (8) is improved, and the residual large particle defect is eliminated; the movable coil device (8) selects a copper tube with low resistance, and the diameter, the thickness and the length of the copper tube are determined according to the number of turns of the movable coil device (8), the diameter of a coil channel, the shape of a coil, the distance between turns of the coil, the size of a vacuum chamber, the transmission path and the transmission distance of arc plasma; the positive electrode and the negative electrode of the movable coil device power supply (9) provide proper current for the movable coil device (8) according to the magnetic field intensity, the direction and the cooling system, the input range of the current is 0-2000A, the stability of the whole vacuum system and the proper magnetic field output by the movable coil device (8) are ensured, electric arc plasma reaches the surface of the substrate with high transmission efficiency while residual large particles are removed according to the set path of the movable coil device (8), the loss of the electric arc plasma in the vacuum chamber (13) is avoided, and the rapid deposition of a film is realized;
the arc ion plating target source (3), the multistage magnetic field device (4) and the movable coil device (8) adopt a direct water cooling mode, the problem of temperature rise in the working process is avoided, and an external water cooler system provides enough cooling water flow and cooling temperature to ensure the normal operation of the whole vacuum system.
According to the preparation requirement of the film, relevant process parameters are adjusted to prepare pure metal films, compound ceramic films with different element ratios, functional films and high-quality films with nano multilayer or gradient structures.
The invention has the advantages that: a. by utilizing the matching of the shape of the movable coil device and the layout and direction of magnetic force lines of a magnetic field, the movable coil can adopt a classical 90-degree bending type, and can also adopt typical coil structure combinations such as a straight line, a bend, a straight line combination (the magnetic force lines of the straight line part are tangent and intersected with the magnetic force lines of the bent part), a straight line and straight line combination (the magnetic force lines of the two straight line parts are intersected), a straight line, an arc and straight line combination (the three parts are intersected and tangent combination) and an arc, a straight line and an arc combination (the three are tangent and intersected) and the like, wherein the arc and the straight line part are determined according to the requirements of spatial position and a transmission path, the effective control of an arc plasma transmission path is realized, and the large particle defects remained in the multistage magnetic field device, the lining bias stepped pipe and the porous baffle plate combination device are further removed, the loss of the arc plasma in the transmission process of the vacuum chamber is reduced, the transmission efficiency of the arc plasma and the deposition speed of the film are further improved by guiding the magnetic field of the movable coil, the limitation of the deposition position caused by the space of the vacuum chamber and the layout design of a target source is overcome, the film can be prepared at the optimal position of the vacuum chamber, the series resistance value of the movable coil can be adjusted by the rheostat device, the adjustment of the positive bias parameters of the movable coil is realized, the attraction of electrons and residual large particles in the arc plasma is realized, the transmission efficiency of the arc plasma in the movable coil is improved, the defect of residual large particles is eliminated, and the deposition speed of the film is increased; b. the multistage magnetic field filtering device can ensure the stable movement of the electric arc on the surface of the target through the constraint of the magnetic field to generate continuous electric arc plasma, the high-efficiency transmission of the electric arc plasma in the multistage magnetic field device is realized through the magnetic lines of force of the multistage magnetic field, the moving path of the electric arc plasma and the large particle defect is changed to realize the separation of the electric arc plasma and the large particle defect, and the large particle defect in the electric arc plasma is further reduced or even eliminated; c. the lining bias stepped pipe and the porous baffle plate combined device can continuously or periodically effectively attract large particles and continuously or periodically repel deposited ions by applying direct current, pulse or direct current pulse composite positive bias voltage, and can reduce the loss of plasma in the pipe transmission process by bipolar pulse oscillation of the positive bias voltage and the negative bias voltage, thereby further improving the transmission efficiency of arc plasma and the deposition speed of a film; d. the lining bias stepped pipe and the porous baffle plate combination device can eliminate large particle defects in arc plasma by utilizing the type, the aperture and the hole spacing of the baffle plate holes and the structural combination between each level of baffle plate through the self shape and through the inner diameter change of the inlet and the outlet of the stepped pipe and the structural combination of the stepped pipe and the baffle plate, and the movement path of the large particle defects is limited to eliminate the large particle defects in the arc plasma, so that the probability that the large particles reach the surface of a deposition sample through the porous baffle plate device is reduced, the mechanical blocking and shielding of large particles are realized, the lining bias stepped pipe and the porous baffle plate combination device are flexibly disassembled and are convenient to clean, the problem of pollution cleaning of the inner wall of the pipe of the multistage magnetic field device in a lining-free state is avoided, and the pollution of film components caused by the secondary sputtering of different target materials on the pollutants of the lining baffle plate after the target materials are replaced can be effectively avoided; e. the pulse bias power supply eliminates the residual large particle defects and adjusts and optimizes the energy of the arc plasma by adjusting the pulse type, the pulse amplitude, the pulse width and the pulse frequency and utilizing the rejection suppression effect of the electric field; f. the microstructure and the performance of the prepared film can be adjusted through pulse bias parameters, the pinning effect of high-energy ions on the growth of the film is realized by utilizing the type, the amplitude, the pulse width and the frequency of the pulse bias, the crystal structure and the stress state of the growth of the film are improved, the bonding strength is improved, and the service performance of the film is improved; g. the film prepared by the filtering device compounded by the combined magnetic field, the lining bias stepped pipe and the porous baffle eliminates the defect of large particles in the film, reduces the loss of the arc plasma in the filtering device and the vacuum chamber, improves the service efficiency of the arc plasma, realizes the rapid preparation of the film, can ensure that the crystal structure and the microstructure of the film are more compact, and is favorable for further improving the service performance of the film.
The combined magnetic field and the filtering device compounded by the lining bias stepped pipe and the porous baffle plate can be combined in a single set or a plurality of sets, and the combination of multiple types of the multistage magnetic field device (4), the lining bias stepped pipe and porous baffle plate combination device (6) and the movable coil device (8) is combined to prepare a pure metal film, compound ceramic films with different element proportions, functional films and films with a nano multilayer or gradient structure, or a single set or multiple sets of the device are adopted and combined to adopt the traditional direct current magnetron sputtering, the pulse magnetron sputtering, the traditional electric arc ion plating, the pulse cathode arc and direct current bias voltage, the pulse bias voltage or the direct current pulse composite bias voltage device to realize the combination of two or more than two deposition modes to carry out film deposition, so as to prepare the pure metal film, the compound ceramic films with different element proportions, the functional films and high-quality films with the nano multilayer or gradient structure.
Drawings
FIG. 1 is a simplified assembly of a filtration device incorporating the combination of a magnetic field and a liner biased stepped tube and porous baffle of the present invention; FIG. 2 is a 7-configuration layout of the moving coil; FIG. 3 is a schematic view of an assembly of a liner biased stepped tube and a perforated baffle; FIG. 4 is a schematic view of an exploded configuration of the liner biased stepped tube and perforated baffle assembly; FIG. 5 is a schematic view of a 4-stage stepped pipe arrangement; FIG. 6 is a schematic view of a 3-stage stepped pipe arrangement; FIG. 7 is a schematic view of a 2-stage stepped pipe arrangement; FIG. 8 is a simplified assembly of a liner biased porous baffle device; FIG. 9 is a schematic view of the construction of 2 circular hole type baffles; fig. 10 is a schematic view of the structure of 2 rectangular hole type baffles.
Detailed Description
The first embodiment is as follows: the following describes the embodiment with reference to fig. 1-10, and the device used in the filtering device combining the magnetic field and the lining bias stepped pipe and the porous baffle plate in the embodiment comprises a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a multi-stage magnetic field device (4), a multi-stage magnetic field power supply (5), a lining bias stepped pipe and porous baffle plate combined device (6), a lining bias power supply (7), a movable coil device (8), a movable coil device power supply (9), a rheostat device (10), a sample stage (11), a bias power supply waveform oscilloscope (12) and a vacuum chamber (13);
in the device:
a matrix workpiece to be processed is arranged on a sample table (11) in a vacuum chamber (13), a multi-stage magnetic field device (4), a lining bias stepped pipe and porous baffle plate combined device (6), a movable coil device (8) and the vacuum chamber (13) are mutually insulated, the workpiece is arranged on the sample table (11), the sample table (11) is connected with the negative electrode output end of a bias power supply (1), an arc ion plating target source (3) is arranged on the vacuum chamber (13) and connected with the negative electrode output end of an arc power supply (2), each stage of magnetic field of the multi-stage magnetic field device (4) is connected with each output end of a multi-stage magnetic field power supply (5), the positive and negative connection method can be determined according to the direction of an output magnetic field, the lining bias stepped pipe and porous baffle plate combined device (6) is connected with the positive electrode output end of a lining bias power supply (7), the movable coil device (8) is connected with a movable coil device power supply (9) through the positive and negative electrode input ends on a flange port, an external water-cooling circulation system and a power supply master control switch are started;
and (3) thin film deposition: the vacuum chamber (13) is vacuumized, and the vacuum degree in the vacuum chamber (13) is less than 10-4When Pa is needed, the working gas is introduced to 0.01Pa to 10Pa, the bias voltage power supply (1) and the bias voltage power supply waveform oscilloscope (12) are started, the bias voltage power supply (1) can be direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse bias, the output bias voltage amplitude, the pulse frequency and the pulse width are adjusted, the peak voltage value of the output pulse of the bias voltage power supply (1) is 0 kV to 1.2kV, and the pulse frequency is 0Hz to 80 HzkHz, pulse width of 1-90%, working current of 0-400A and maximum output power of 200 kW;
starting an arc power supply (2), cleaning the surface of an arc ion plating target source (3) through arc spot movement of an electric arc, and adjusting required process parameters, wherein the current value output by the arc power supply (2) is 10-300A, and the maximum output power is 12 kW;
the multistage magnetic field device (4) is adjusted through the multistage magnetic field power supply (5), arc plasma is kept to be stably generated in the arc ion plating target source (3) and large particle defects are filtered and eliminated, the ablation uniformity of a target material is guaranteed, the utilization efficiency of the target material is improved, the arc plasma passes through the multistage magnetic field device (4) with high transmission efficiency, the multistage magnetic field device (4) adopts a red copper wire with an insulated surface, the diameter and the number of turns of the wire are determined according to passing current and magnetic field strength, the multistage magnetic field power supply (5) supplies power to magnetic fields at all levels respectively and independently, the independent adjustment of the magnetic fields at all levels is realized, and after the structure of the device is determined, the directions and the strengths of the magnetic fields at all levels output by the multistage magnetic field device (4) are adjusted through output current of the multistage magnetic field power supply (5);
the inner lining bias stepped pipe and porous baffle plate combined device (6) can be matched with the multi-stage magnetic field device (4) to design the outer diameter of the stepped pipe, the type and size of a hole in the porous baffle plate and the distance between the baffle plates, the structure of the stepped pipe can be matched with the multi-stage magnetic field device (4) to design the structures, gradient difference and inlet and outlet layouts of 2-stage stepped pipes, 3-stage stepped pipes or 4-stage and above stepped pipes, the stepped pipes and the baffle plates are fixedly connected, and the stepped pipe and the baffle plates are fixedly connected and positioned through bolts and nuts of non-magnetic stainless steel; the lining bias stepped pipe, the porous baffle plate combined device (6) and the multi-stage magnetic field device (4) are movably and insulatively assembled together, the outer diameter of the porous baffle plate and the inner diameter of the stepped pipe are mutually matched and are assembled and connected together through a non-magnetic stainless steel rivet, the lining bias stepped pipe and the porous baffle plate combined device (6) can be detached, cleaned and installed in time according to the surface pollution degree, the problems that the inner wall of the multi-stage magnetic field device (4) is polluted and is difficult to clean in the lining-plate-free state are solved, and the problem that the secondary sputtering of the pollutants of the lining baffle plate causes thin sputtering after target material replacement can be effectively avoidedContamination of membrane components; the space between the porous baffles in the lining bias stepped pipe and porous baffle combination device (6) is matched with the lengths of all levels of magnetic fields of the multistage magnetic field device (4) and the outlets of all levels of stepped pipes, and the lengths of the stepped pipesHThe length of the stepped pipe is the same as that of the multistage magnetic field device (4), and the inner diameter of the stepped pipe at the right inlet isD IntoIs larger than the outer diameter of the arc ion plating target source (3) and smaller than the inner diameter of the multistage magnetic field device (4), the porous baffle plate can be matched with the size, the baffle plate interval and the structural combination of the stepped pipe design baffle plate, and the inner diameter of the outlet at the left side of the stepped pipeD Go outThe size and the type of the aperture in the porous baffle and the structural combination of each stage of baffle are selected according to different targets and process parameters, and the mechanical blocking and shielding of large particles can be realized through the inner diameter change at the inlet and the outlet of the stepped pipe and the structural combination of the baffles;
the materials of the multistage magnetic field device (4) and the lining bias stepped pipe and porous baffle plate combined device (6) are selected from a non-magnetic and cleaning-resistant 304 stainless steel material, the length, the inner diameter, the outer diameter, the thickness, the number of turns of a magnetic field and the direction of the multistage magnetic field device (4) are determined according to the diameter, cooling and transmission distance of a target material, the outer diameter of the stepped pipe is determined according to the inner diameter of the multistage magnetic field device (4) by the lining bias stepped pipe and porous baffle plate combined device (6), the proper thickness is selected according to the length and rigidity of the stepped pipe, the outer diameter of the porous baffle plate is matched with the inner diameter of the stepped pipe, the proper thickness, the size and the type of the pore diameter and the structural layout of each stage of baffle plate are selected according to the requirements, and the processing is carried out according to actual design parameters;
the liner bias power supply (7) is started, the liner bias stepped pipe and the porous baffle plate combined device (6) keeps direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse bias, wherein the single pulse, multi-pulse or bipolar pulse bias type can adjust the pulse frequency, the pulse width and the pulse type, the adjustment of the output voltage ensures that the liner bias stepped pipe and the porous baffle plate combined device (6) attract large particles, repel deposited ions, reduce the loss of the arc plasma in the transmission process in the pipe, reduce or even eliminate the defect of the large particles in the arc plasma, improve the transmission efficiency of the arc plasma and the deposition speed of a film, the voltage parameter of the liner bias power supply (7) is-200 to +200V, and is a direct current, single pulse, multi-pulse, direct current pulse composite or bipolar pulse power supply, the pulse type can adjust the pulse frequency, the pulse width and the pulse type, and the periodic or continuous and stable attraction is generated to the large particle defects in the deposition process, so that the probability that the large particles pass through the multistage magnetic field device (4) and the lining bias stepped pipe and porous baffle plate combined device (6) is greatly reduced;
the power supply (9) of the movable coil device is turned on, the input current of the movable coil device (8) is adjusted, the adjustment of the magnetic field direction and the magnetic field intensity is realized, the adjustment of the number of turns of the coil, the coil distance, the shape, the transmission path and the like of the movable coil device (8) is used for controlling the arc plasma transmitted from the multistage magnetic field device (4) and the lining bias stepped pipe and porous baffle plate combined device (6), so that the arc plasma reaches the surface of the substrate with higher transmission efficiency, the deposition position limitation caused by the space of a vacuum chamber and the layout design of a target source is overcome, and the rapid deposition of a film is carried out; the rheostat device (10) adjusts output resistance, positive bias voltage change on the movable coil device (8) is realized, an electric field generated by the positive bias voltage can realize attraction of electrons and residual large particles in the arc plasma transmitted from the multistage magnetic field device (4) and the lining bias voltage stepped pipe and porous baffle plate combined device (6), so that the ion number of the arc plasma output from the movable coil device (8) is increased, the transmission efficiency of the arc plasma in the movable coil device (8) is improved, and the residual large particle defect is eliminated; the movable coil device (8) selects a copper tube with low resistance, and the diameter, the thickness and the length of the copper tube are determined according to the number of turns of the movable coil device (8), the diameter of a coil channel, the shape of a coil, the distance between turns of the coil, the size of a vacuum chamber, the transmission path and the transmission distance of arc plasma; the positive electrode and the negative electrode of the movable coil device power supply (9) provide proper current for the movable coil device (8) according to the magnetic field intensity, the direction and the cooling system, the input range of the current is 0-2000A, the stability of the whole vacuum system and the proper magnetic field output by the movable coil device (8) are ensured, electric arc plasma reaches the surface of the substrate with high transmission efficiency while residual large particles are removed according to the set path of the movable coil device (8), the loss of the electric arc plasma in the vacuum chamber (13) is avoided, and the rapid deposition of a film is realized;
the arc ion plating target source (3), the multistage magnetic field device (4) and the movable coil device (8) adopt a direct water cooling mode, the problem of temperature rise in the working process is avoided, and an external water cooler system provides enough cooling water flow and cooling temperature to ensure the normal operation of the whole vacuum system.
The output waveform of the bias power supply (1) is direct current, single pulse, direct current pulse composite, multi-pulse composite or bipolar pulse.
The output direct current of the arc power supply (2), single pulse, direct current pulse composite or multi-pulse composite.
The arc ion plating target source (3) adopts high-melting point target materials, low-melting point pure metal or multi-element alloy materials and non-metal materials (such as graphite), and can use a single target, a plurality of targets or a composite target to carry out pure metal thin films, compound ceramic thin films with different element ratios, functional thin films, multi-element multi-layer, superlattice and high-quality thin films with nano multi-layer or gradient structures.
The working gas is argon or the mixed gas of one or more of nitrogen, acetylene, methane, silane or oxygen to prepare pure metal film, compound ceramic film with different element proportions, functional film, multi-component multi-layer, superlattice, nano multi-layer or gradient structure film.
The filtering device combining the combined magnetic field with the lining bias stepped pipe and the porous baffle plate realizes effective control of an arc plasma transmission path by utilizing the matching of the shape of the movable coil device and the layout and direction of magnetic lines of force of the magnetic field, further eliminates the defect of large residual particles in the combined device of the multistage magnetic field device, the lining bias stepped pipe and the porous baffle plate, reduces the loss of plasma in the transmission process of a vacuum chamber, further improves the transmission efficiency of the arc plasma and the deposition speed of a film by guiding the magnetic field of the movable coil, overcomes the deposition position limitation caused by the layout design of the space and a target source of the vacuum chamber, can realize the preparation of the film at the optimal position of the vacuum chamber, can also adjust the series resistance value of the movable coil by a rheostat device, realizes the adjustment of the self positive bias parameters of the movable coil, and realizes the attraction of electrons and the residual large particles in the arc plasma, the transmission efficiency of the arc plasma in the movable coil is improved, the defect of residual large particles is eliminated, and the deposition speed of the film is increased; the stable movement of the electric arc on the surface of the target material is ensured by utilizing the magnetic field constraint of the multistage magnetic field filtering device, continuous electric arc plasma is generated, the high-efficiency transmission of the electric arc plasma in the multistage magnetic field device is realized through the magnetic lines of the multistage magnetic field, the moving path of the electric arc plasma and the large particle defect is changed to realize the separation of the electric arc plasma and the large particle defect, and the large particle defect in the electric arc plasma is further reduced or even eliminated; the lining bias stepped pipe and the porous baffle plate combination device can reduce the loss of plasma in the transmission process in the pipe and further improve the transmission efficiency of arc plasma and the deposition speed of a film by applying direct current, pulse or direct current pulse composite positive bias voltage to the large particles and effectively avoid the problem of the large particles generated by low-melting point materials and continuously or periodically repel deposited ions and also by oscillating the positive and negative bias bipolar pulses, and the lining bias stepped pipe and the porous baffle plate combination device can limit the movement path of the large particle defects to eliminate the large particle defects in the arc plasma by utilizing the types, the apertures, the aperture intervals and the structural combination between the baffle plates through the shape of the lining bias stepped pipe and the porous baffle plate combination device, the inner diameter change at the inlet and the outlet of the stepped pipe and the structural combination of the baffle plate, the probability that large particles reach the surface of a deposition sample through the porous baffle device is reduced, and the mechanical blocking and shielding effect on large particle defects is realized; the lining bias stepped pipe and porous baffle plate combined device is flexibly disassembled, is convenient to clean, avoids the problem of pollution cleaning of the inner wall of the pipe of the multi-stage magnetic field device in a lining plate-free state, and can effectively avoid the pollution of film components caused by secondary sputtering of the pollutants of the lining baffle plate after the target material is replaced; the pulse bias power supply eliminates the residual large particle defects and adjusts and optimizes the energy of the arc plasma by adjusting the pulse type, the pulse amplitude, the pulse width and the pulse frequency and utilizing the rejection suppression effect of the electric field, improves the interval potential distribution of the plasma near the matrix, fully attracts the arc plasma to move towards a workpiece, and realizes the rapid deposition of the film; the microstructure and the performance of the prepared film can be adjusted through pulse bias parameters, the pinning effect of high-energy ions on the growth of the film is realized by utilizing the type, the amplitude, the pulse width and the frequency of the pulse bias, the crystal structure and the stress state of the growth of the film are improved, the bonding strength is improved, and the service performance of the film is improved; meanwhile, the arc ion plating technology is utilized to generate stable and continuous metal plasma with high ionization rate, which is beneficial to the chemical synthesis reaction of ions with high ionization rate on the surface of a workpiece, and compound ceramic films, functional films, multi-component multi-layer films, super lattices and films with gradient structures or pure metal films with different element ratios are prepared; the film prepared by the filtering device compounded by the combined magnetic field, the lining bias stepped pipe and the porous baffle eliminates the defect of large particles in the film, reduces the loss of arc plasma in the filtering device and the vacuum chamber, avoids the pollution of lining baffle residues to the film caused by the replacement of different targets, improves the service efficiency of the arc plasma, realizes the rapid preparation of the film, optimizes the energy distribution of the arc plasma by using pulse bias, can ensure that the crystal tissue and the microstructure of the film are more compact, and is favorable for further improving the service performance of the film.
The second embodiment is as follows: the difference between this embodiment and the first embodiment is that the apparatus can also realize the following additional functions: the method can combine one or more than two devices of the traditional direct current magnetron sputtering, the pulse magnetron sputtering, the traditional arc ion plating and the pulse cathode arc, and then apply a direct current bias voltage, a pulse bias voltage, a direct current pulse composite bias voltage or a bipolar pulse bias voltage device on the workpiece to carry out film deposition to prepare pure metal films, compound ceramic films with different element ratios, functional films and high-quality films with nano multilayer or gradient structures.
The third concrete implementation mode: the difference between the embodiment and the second embodiment is that the combined magnetic field is connected with a filtering device compounded by the lining bias stepped pipe and the porous baffle, the arc power supply (2) is started, the multistage magnetic field power supply (5) is started to adjust the multistage magnetic field device (4), the lining bias power supply (7) is started, the lining bias stepped pipe and the porous baffle combined device (6) keep direct-current positive bias, the bias power supply (1) is started, the movable coil device power supply (9) is started to adjust the movable coil device (8), the rheostat device (10) is used for adjusting output resistance, technological parameters are adjusted, film deposition is carried out, and the multilayer structure film with different stress states, microstructures and element ratios is prepared, and the rest is the same as the second embodiment.
The fourth concrete implementation mode: the difference between the first embodiment and the second embodiment is that a combined magnetic field is connected with a filtering device compounded by a lining bias stepped pipe and a porous baffle, an arc power supply (2) is started, a multistage magnetic field power supply (5) is started to adjust a multistage magnetic field device (4), a lining bias power supply (7) is started, the lining bias stepped pipe and the porous baffle combined device (6) keep direct-current positive bias, a bias power supply (1) is started, a movable coil device power supply (9) is started to adjust a movable coil device (8), a rheostat device (10) is used for adjusting output resistance and technological parameters to perform film deposition, and one or more than two methods of traditional direct-current magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc are combined to apply direct-current bias, pulse bias, direct-current pulse composite bias or pulse bias on a workpiece to perform film deposition, the rest is the same as in the second embodiment.
The fifth concrete implementation mode: the difference between the first embodiment and the second embodiment is that a combined magnetic field formed by combining 2 sets or more of arc ion plating target sources (3), a multi-stage magnetic field device (4), a lining bias stepped pipe and porous baffle combined device (6) and a movable coil device (8) and a filtering device formed by combining the lining bias stepped pipe and the porous baffle are used for film deposition with various pure metal elements and multi-element alloy materials as targets, one or more methods of traditional direct current magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc are combined, and then a direct current bias, pulse bias or direct current pulse combined biasing device is applied to a workpiece for film deposition to prepare a multilayer structure film with different stress states, microstructures and element ratios.

Claims (1)

1. The filtering device is characterized by comprising a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), a multistage magnetic field device (4), a multistage magnetic field power supply (5), a lining bias stepped tube and porous baffle combination device (6), a lining bias power supply (7), a movable coil device (8), a movable coil device power supply (9), a rheostat device (10), a sample table (11), a bias power waveform oscilloscope (12) and a vacuum chamber (13);
in the device:
a matrix workpiece to be processed is placed on a sample table (11) in a vacuum chamber (13), a multi-stage magnetic field device (4), a lining bias stepped pipe and porous baffle plate combined device (6), a movable coil device (8) and the vacuum chamber (13) are mutually insulated, the workpiece is placed on the sample table (11), the sample table (11) is connected with the negative electrode output end of a bias power supply (1), an arc ion plating target source (3) is installed on the vacuum chamber (13) and connected with the negative electrode output end of an arc power supply (2), each stage of magnetic field of the multi-stage magnetic field device (4) is connected with each output end of a multi-stage magnetic field power supply (5), the positive and negative connection method is determined according to the direction of an output magnetic field, the lining bias stepped pipe and porous baffle plate combined device (6) is connected with the positive electrode output end of a lining bias power supply (7), the movable coil device (8) is connected with a movable coil device power supply (9) through the positive and negative electrode input ends on a flange port, the rheostat device (10) is connected with the movable coil device (8) in series and is connected into a loop of a power supply (9) of the movable coil device, and a power supply master control switch and an external water-cooling circulating system are started.
CN201822274434.7U 2017-12-30 2018-12-30 Combined magnetic field and filtering device with composite lining bias stepped pipe and porous baffle Active CN214115702U (en)

Applications Claiming Priority (2)

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CN2017219284714 2017-12-30
CN201721928471 2017-12-30

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