CN214088735U - Quick drainage device after silicon leakage of single crystal furnace - Google Patents
Quick drainage device after silicon leakage of single crystal furnace Download PDFInfo
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- CN214088735U CN214088735U CN202023348164.3U CN202023348164U CN214088735U CN 214088735 U CN214088735 U CN 214088735U CN 202023348164 U CN202023348164 U CN 202023348164U CN 214088735 U CN214088735 U CN 214088735U
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Abstract
The utility model discloses a quick drainage device after silicon leakage of single crystal furnace, including vertical passageway, overflow launder and upper cover, the top and the single crystal furnace stove bottom intercommunication of vertical passageway, the bottom and the overflow launder intercommunication of vertical passageway, upper cover mounting are in the overflow launder up end, and are the vacuum cavity in the overflow launder. The utility model discloses a quick drainage device behind single crystal growing furnace hourglass silicon, at single crystal growing furnace stove bottom periphery installation overflow launder, exhaust duct connects vertical passageway, meet the overflow launder below the vertical passageway, the overflow launder is connected with whole furnace body, when taking place to leak the silicon phenomenon, vertical passageway is with silicon solution drainage to overflow launder, make silicon solution flow in the overflow launder fast, do not contact with the stainless steel that leads to the cooling water, it does not melt and wears the stainless steel stove bottom to have guaranteed the silicon solution, avoid the cooling water to leak the condition that boiler explosion appears in the boiler internal pressure that leads to in the twinkling of an eye vaporization increases rapidly, and can follow upper cover department and open the overflow launder, take out the silicon solution that the inside solidifies, continue to install and use again.
Description
Technical Field
The utility model relates to a photovoltaic manufacturing technology field, in particular to a quick drainage device after silicon leakage of a single crystal furnace.
Background
In the Czochralski method, abnormal accidents such as silicon leakage and the like can occur, the slow silicon leakage can be found and treated in time, and the loss is not large; the serious silicon leakage, because of the proruption, the silicon liquid flows into the stove fast, contacts with the stainless steel boiler bottom that leads to cold water, melts the stainless steel bottom of stove that has the cooling water of break-through seriously, leads to the cooling water to gasify in the twinkling of an eye, because airtight space in the stove, the gas that produces can not leak, probably causes the explosion, causes huge accident to take place.
Therefore, how to avoid the situation that the silicon solution is melted through the bottom of the boiler due to silicon leakage is a technical problem to be solved urgently by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a quick drainage device behind single crystal growing furnace hourglass silicon will leak silicon solution drainage to the vacuum cavity that the silicon flows out, makes the silicon melt not gather in the single crystal growing furnace that leads to there is the cooling water, has reduced the explosion risk.
In order to solve the technical problem, the utility model provides a quick drainage device after silicon leaks in single crystal growing furnace, including vertical passageway, overflow launder and upper cover, the top and the single crystal growing furnace stove bottom intercommunication of vertical passageway, the bottom of vertical passageway with the overflow launder intercommunication, the upper cover install in the overflow launder up end, just be the vacuum cavity in the overflow launder.
Preferably, the vertical channel is a single layer stainless steel pipe.
Preferably, the thickness of the vertical channel is 3-5 mm.
Preferably, a graphite sleeve is disposed within the vertical channel.
Preferably, the overflow groove is a single-layer stainless steel cubic groove.
Preferably, the thickness of the overflow groove is 3-5 mm.
Preferably, a graphite plate or an alumina type overflow cotton layer is arranged in the overflow groove.
Preferably, a sealing gasket is arranged at the joint of the upper cover and the overflow groove.
The utility model provides a quick drainage device after single crystal growing furnace leaks silicon, including vertical passageway, overflow launder and upper cover, the top and the single crystal growing furnace stove bottom intercommunication of vertical passageway, the bottom and the overflow launder intercommunication of vertical passageway, upper cover mounting are in the overflow launder up end, and are the vacuum cavity in the overflow launder. The application discloses a quick drainage device after silicon leakage of a single crystal furnace, overflow grooves are arranged on the periphery of the bottom of the single crystal furnace, each exhaust pipeline is connected with one vertical channel, the single crystal furnace is provided with two exhaust pipelines in total, an overflow groove is connected below each vertical channel and is provided with two overflow grooves in total, the overflow grooves are connected with the whole furnace body, the overflow grooves are in a vacuum environment and do not influence the vacuum of the single crystal furnace, when the silicon leakage phenomenon occurs, the silicon solution is guided to the overflow groove by the vertical channel, so that the silicon solution after silicon leakage flows into the overflow groove rapidly, and does not contact with the stainless steel which is filled with cooling water, thereby ensuring that the silicon melt does not melt through the bottom of the stainless steel furnace, avoiding the situation that the boiler explodes because the pressure in the boiler is rapidly increased due to the instant vaporization of the cooling water, cooling the silicon solution stored in the overflow groove for a period of time, the overflow groove can be opened from the upper cover, and the solidified silicon solution in the overflow groove is taken out and then is continuously installed for use.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic overall structure diagram of a specific embodiment of the present invention.
Wherein, in fig. 1:
the device comprises a vertical channel-1, an overflow groove-2, an upper cover-3 and a graphite sleeve-4.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic diagram of an overall structure of an embodiment of the present invention.
The utility model provides an among the concrete implementation mode, mainly include vertical passageway 1, overflow launder 2 and upper cover 3, the top and the single crystal growing furnace stove bottom intercommunication of vertical passageway 1, the bottom and the overflow launder 2 intercommunication of vertical passageway 1, upper cover 3 installs in 2 up end of overflow launder, and is the vacuum cavity in the overflow launder 2.
The top end of the vertical channel 1 is communicated with the bottom of the single crystal furnace, the bottom end of the vertical channel 1 is communicated with the overflow groove 2, the vertical channel 1 is used for draining leaked silicon solution to the overflow groove 2, the upper cover 3 is installed on the upper end face of the overflow groove 2, a vacuum cavity is formed in the overflow groove 2, and the overflow groove 2 is used for storing the silicon solution drained by the vertical channel 1.
Specifically, in the practical application process, the overflow groove 2 is arranged at the periphery of the bottom of the single crystal furnace, each exhaust pipeline is connected with one vertical channel 1, the single crystal furnace has two exhaust pipelines, the overflow groove 2 is connected below each vertical channel 1, the overflow grooves 2 are connected with the whole furnace body, the inside of each overflow groove 2 is in a vacuum environment, the vacuum of the single crystal furnace is not influenced, when the silicon leakage phenomenon occurs, the silicon solution is drained to the overflow groove 2 through the vertical channel 1, the silicon solution after silicon leakage rapidly flows into the overflow groove 2 and is not contacted with the stainless steel communicated with cooling water, the silicon solution is ensured not to melt through the bottom of the stainless steel furnace, the condition that the boiler is exploded due to the rapid increase of the internal pressure of the boiler caused by the instant vaporization of the cooling water is avoided, the silicon solution stored in the overflow groove 2 is cooled for a period of time, the overflow groove 2 can be opened from the upper cover 3, and the solidified silicon solution in the silicon solution is taken out, and then the installation and use are continued.
In order to prevent the vertical channel 1 from being melted and penetrated when the silicon solution is drained, the vertical channel 1 is a single-layer stainless steel pipeline, a graphite sleeve 4 is arranged in the vertical channel 1, the vertical channel 1 is made of a single-layer stainless steel material, cooling water cannot flow through the single layer, the thickness of the vertical channel 1 is 3-5mm, the graphite sleeve 4 is internally plugged, the vertical channel 1 is prevented from being melted and penetrated when the silicon solution overflows from the vertical channel 1, the thickness of the vertical channel 1 is set to be 3-5mm, tests show that the thickness of the vertical channel 1 is based on a good heat insulation effect, temperature transfer is prevented, and temperature stability in the furnace is ensured.
Similarly, the overflow groove 2 is a single-layer stainless steel cubic groove, the thickness of the overflow groove 2 is 3-5mm, and a graphite plate or an alumina type overflow cotton layer is arranged in the overflow groove 2. The overflow groove 2 is made of stainless steel, is single-layer, has the thickness of 3-5mm and the size of cube, has the length, width and height of 500mm, bears 500kg of silicon melt in each overflow groove 2, and is internally provided with a graphite plate or an alumina type overflow cotton layer, so that the silicon melt is held and does not penetrate through the stainless steel overflow groove 2, and the silicon solution can bear the weight to the maximum extent under the condition that the stainless steel effect of the overflow groove 2 is not influenced.
It should be noted that a sealing gasket is arranged at the joint of the upper cover 3 and the overflow groove 2. The upper cover 3 is arranged on the upper surface of the overflow groove 2, the upper cover 3 can be opened, the upper cover 3 and the overflow groove 2 are sealed by a sealing gasket, air tightness is guaranteed, vacuumizing is not affected, after the overflow groove 2 receives silicon melt, the silicon melt is cooled for a period of time, the overflow groove 2 can be opened from the upper cover 3, the solidified silicon melt in the overflow groove is taken out, and the installation and use are continued.
In summary, the quick drainage device after silicon leakage of the single crystal furnace provided by this embodiment mainly includes a vertical channel, an overflow groove and an upper cover, the top end of the vertical channel is communicated with the bottom of the single crystal furnace, the bottom end of the vertical channel is communicated with the overflow groove, the upper cover is installed on the upper end surface of the overflow groove, and a vacuum cavity is formed in the overflow groove. The application discloses a quick drainage device after silicon leakage of a single crystal furnace, overflow grooves are arranged on the periphery of the bottom of the single crystal furnace, each exhaust pipeline is connected with one vertical channel, the single crystal furnace is provided with two exhaust pipelines in total, an overflow groove is connected below each vertical channel and is provided with two overflow grooves in total, the overflow grooves are connected with the whole furnace body, the overflow grooves are in a vacuum environment and do not influence the vacuum of the single crystal furnace, when the silicon leakage phenomenon occurs, the silicon solution is guided to the overflow groove by the vertical channel, so that the silicon solution after silicon leakage flows into the overflow groove rapidly, and does not contact with the stainless steel which is filled with cooling water, thereby ensuring that the silicon melt does not melt through the bottom of the stainless steel furnace, avoiding the situation that the boiler explodes because the pressure in the boiler is rapidly increased due to the instant vaporization of the cooling water, cooling the silicon solution stored in the overflow groove for a period of time, the overflow groove can be opened from the upper cover, and the solidified silicon solution in the overflow groove is taken out and then is continuously installed for use.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. The quick drainage device after silicon leakage of the single crystal furnace is characterized by comprising a vertical channel (1), an overflow groove (2) and an upper cover (3), wherein the top end of the vertical channel (1) is communicated with the bottom of the single crystal furnace, the bottom end of the vertical channel (1) is communicated with the overflow groove (2), the upper cover (3) is installed on the upper end surface of the overflow groove (2), and a vacuum cavity is formed in the overflow groove (2).
2. The quick drainage device after silicon leakage of the single crystal furnace according to claim 1, wherein the vertical channel (1) is a single-layer stainless steel pipeline.
3. The quick drainage device after silicon leakage of the single crystal furnace according to claim 2, wherein the thickness of the vertical channel (1) is 3-5 mm.
4. The quick post-silicon-leakage drainage device for the single crystal furnace according to claim 3, wherein a graphite sleeve (4) is arranged in the vertical channel (1).
5. The quick drainage device after silicon leakage of the single crystal furnace according to claim 1, wherein the overflow groove (2) is a single-layer stainless steel cubic groove.
6. The quick drainage device after silicon leakage of the single crystal furnace according to claim 5, wherein the thickness of the overflow groove (2) is 3-5 mm.
7. The quick drainage device after silicon leakage of the single crystal furnace according to claim 6, wherein a graphite plate or an alumina type overflow cotton layer is arranged in the overflow groove (2).
8. The quick drainage device after silicon leakage of the single crystal furnace according to any one of claims 1 to 7, characterized in that a sealing gasket is arranged at the joint of the upper cover (3) and the overflow groove (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023348164.3U CN214088735U (en) | 2020-12-31 | 2020-12-31 | Quick drainage device after silicon leakage of single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023348164.3U CN214088735U (en) | 2020-12-31 | 2020-12-31 | Quick drainage device after silicon leakage of single crystal furnace |
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| Publication Number | Publication Date |
|---|---|
| CN214088735U true CN214088735U (en) | 2021-08-31 |
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| CN202023348164.3U Active CN214088735U (en) | 2020-12-31 | 2020-12-31 | Quick drainage device after silicon leakage of single crystal furnace |
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| CN (1) | CN214088735U (en) |
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- 2020-12-31 CN CN202023348164.3U patent/CN214088735U/en active Active
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