CN214078346U - Wafer cleaning device - Google Patents
Wafer cleaning device Download PDFInfo
- Publication number
- CN214078346U CN214078346U CN202022885479.5U CN202022885479U CN214078346U CN 214078346 U CN214078346 U CN 214078346U CN 202022885479 U CN202022885479 U CN 202022885479U CN 214078346 U CN214078346 U CN 214078346U
- Authority
- CN
- China
- Prior art keywords
- cleaned
- liquid
- cleaning
- wafer
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model provides a belt cleaning device of wafer relates to the semiconductor processing field, and this belt cleaning device includes: the bracket drives the surface to be cleaned of the wafer to rotate in a preset plane; the cleaning brush is contacted with a partial area of the surface to be cleaned of the wafer, and the rotating center of the surface to be cleaned of the wafer is positioned in the area where the cleaning brush is contacted with the surface to be cleaned of the wafer; the liquid supply pipeline is positioned on the outer side of the surface to be cleaned of the wafer, a plurality of liquid outlets are arranged at intervals on the liquid supply pipeline, and each liquid outlet faces the surface to be cleaned so as to spray cleaning liquid to the surface to be cleaned; wherein, the closer the point on the surface to be cleaned is to the rotation center of the surface to be cleaned, the higher the density of the cleaning liquid sprayed by the point is. The wafer cleaning device can make the surface of the cleaned wafer have good consistency.
Description
Technical Field
The utility model relates to a semiconductor system processing field especially relates to a belt cleaning device of wafer.
Background
The wafer is a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, a layer of mixed liquid of aluminum oxide and glycerin is attached to the surface of the wafer, the surface of the wafer needs to be cleaned before subsequent processing, the consistency of the surface of the wafer has important influence on the precision of the subsequent processing and the performance of the wafer, and the consistency of the surface of the wafer refers to the consistency of the cleaning effect of all parts of the surface of the wafer after cleaning. When cleaning a wafer, it is necessary to make the wafer surface have high uniformity, i.e. it is necessary to ensure that the cleaning effect of each part of the wafer surface is the same. The related cleaning apparatus sprays a cleaning solution to the wafer, but the surface uniformity of the cleaned wafer is poor.
SUMMERY OF THE UTILITY MODEL
The utility model provides a cleaning device for wafers, which solves the technical problem of how to improve the consistency of the wafers after cleaning.
The embodiment of the utility model provides a belt cleaning device of wafer, include: the bracket drives the surface to be cleaned of the wafer to rotate in a preset plane; the cleaning brush is in contact with a partial area of the surface to be cleaned of the wafer, and the rotation center of the surface to be cleaned of the wafer is positioned in the area where the cleaning brush is in contact with the surface to be cleaned of the wafer; the liquid supply pipeline is positioned on the outer side of the surface to be cleaned of the wafer, a plurality of liquid outlets are arranged at intervals on the liquid supply pipeline, and each liquid outlet faces the surface to be cleaned so as to spray cleaning liquid to the surface to be cleaned; wherein the closer a point on the surface to be cleaned is to the center of rotation of the surface to be cleaned, the higher the density of the cleaning liquid sprayed by the point.
Further, the closer the liquid outlet is to the rotation center of the surface to be cleaned, the larger the aperture of the liquid outlet is; and/or the closer a point on the surface to be cleaned is to the rotation center of the surface to be cleaned, the larger the number of the liquid outlets capable of spraying cleaning liquid to the point.
Further, the cleaning device further comprises: the nozzle is communicated with the liquid outlet and can open or close the liquid outlet; wherein the closer a point of the surface to be cleaned is to a rotation center of the surface to be cleaned, the greater the number of the opened liquid outlets capable of spraying cleaning liquid to the point.
Further, the nozzle includes: the open nozzle is provided with a liquid spraying port communicated with the liquid outlet; the closed nozzle is provided with a closed surface for closing the liquid outlet; wherein, the closer the area of the surface to be cleaned is to the rotation center of the surface to be cleaned, the greater the number of the liquid outlets communicating with the liquid spray opening of the open nozzle among the liquid outlets capable of spraying the cleaning liquid to the point.
Furthermore, the number of the liquid spraying openings of the open type nozzle is multiple.
Further, the nozzle is detachably connected to the liquid supply line.
Furthermore, along the length direction of the liquid supply pipeline, positioning bosses are arranged between the liquid outlets, and the distance between every two adjacent positioning bosses is the same as the width of the nozzle.
Further, the open nozzle is rotatably connected to the liquid supply line.
Further, the cleaning device further comprises: and the nozzle driving piece is connected with the open nozzle and drives the liquid spraying port of the open nozzle to switch between a first position and a second position.
Further, the distance between the liquid spraying opening and the rotation center of the surface to be cleaned in the first position is smaller than the distance between the liquid spraying opening and the rotation center of the surface to be cleaned in the second position; the closer the liquid ejecting port is to the first position, the slower the rotation speed of the nozzle driving member for driving the liquid ejecting port of the open nozzle.
The utility model provides a belt cleaning device of wafer, including being used for the rotatory support of drive wafer, be provided with the liquid supply pipeline of liquid outlet with the face of treating of wafer, the liquid outlet can be to the face of treating of wafer and spray the cleaning solution. The structure of the cleaning device is set to be that the closer the point on the surface to be cleaned is to the rotation center of the surface to be cleaned, the higher the density of the cleaning liquid sprayed at the point is, the influence of low-concentration liquid released by the cleaning brush on the distribution of the cleaning liquid on the surface to be cleaned is compensated, and the influence of centrifugal force generated by the rotation of the surface to be cleaned of the wafer on the distribution of the cleaning liquid on the surface to be cleaned is compensated, so that the uniform distribution of the cleaning liquid on the surface to be cleaned is ensured, and the surface of the cleaned wafer has good consistency.
Drawings
Fig. 1 is a schematic structural diagram of a wafer cleaning apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a liquid supply pipeline in an apparatus for cleaning a wafer according to an embodiment of the present invention;
fig. 3 is a graph showing a relationship between a distance between a point on a surface to be cleaned and a rotation center and a concentration of a cleaning solution sprayed on the point when the rotation speed of the wafer is less than a predetermined threshold value according to an embodiment of the present invention;
fig. 4 is a graph showing a relationship between a distance between a point on a surface to be cleaned and a rotation center and a concentration of a cleaning solution sprayed on the point when the rotation speed of the wafer is greater than a predetermined threshold value according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another liquid supply pipeline in the wafer cleaning apparatus according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another liquid supply pipeline in the wafer cleaning apparatus according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of another wafer cleaning apparatus according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of another wafer cleaning apparatus according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of another wafer cleaning apparatus according to an embodiment of the present invention;
fig. 10 is a schematic view of the first type of nozzle driving member and the open nozzle assembly in the lens cleaning device according to the embodiment of the present invention;
fig. 11 is a schematic view of the second type of nozzle driving member and the open nozzle assembly in the lens cleaning device according to the embodiment of the present invention;
fig. 12 is a schematic structural diagram of another liquid supply pipeline in an apparatus for cleaning a wafer according to an embodiment of the present invention.
Description of the reference numerals
1-cleaning device, 2-wafer, 2' -surface to be cleaned, O-center of rotation, 10-support, 20-cleaning brush, 30-liquid supply line, 31-liquid outlet, 32-positioning boss, 40-nozzle, 41-open nozzle, 411-liquid spray port, 412-driving boss, 413-gear ring, 42-closed nozzle, 50-nozzle driving piece, 50A-first type of nozzle driving piece, 51A-mounting frame, 52A-linear motor, 521A-output shaft, 53A-reset reed, 50B-second type of nozzle driving piece, 51B-rotary motor, 52B-driving gear.
Detailed Description
Various combinations of the specific features in the embodiments described in the detailed description may be made without contradiction, for example, different embodiments may be formed by different combinations of the specific features, and in order to avoid unnecessary repetition, various combinations of the specific features in the present invention are not separately described.
In a specific embodiment, the wafer cleaning apparatus provided in the embodiments of the present invention may be used to clean various wafers, for example, the wafer may be a wafer used for manufacturing a processor chip, and the wafer may also be a wafer used for manufacturing a memory.
As shown in fig. 1, a cleaning apparatus 1 for a wafer 2 includes: a bracket 10, a cleaning brush 20, and a liquid supply line 30. The support 10 drives the surface 2 'to be cleaned of the wafer 2 to rotate in a predetermined plane, wherein the surface 2' to be cleaned of the wafer 2 is a surface on which the wafer is required to be processed in a subsequent process. Optionally, the cleaning device 1 further comprises a transmission mechanism, the transmission mechanism is respectively contacted with the support 10 and the wafer 2, and the support 10 drives the wafer 2 to rotate through the transmission mechanism. The transmission can be, for example, a belt transmission, a rack-and-pinion transmission or a worm gear. Alternatively, the support 10 is in contact with the wafer 2 and directly drives the wafer 2 in motion. Optionally, the support 10 is further configured to limit the movement of the surface 2 ' to be cleaned of the wafer 2 in other directions than the rotation in the predetermined plane, and the structure of the support 10 may be any structure that can drive the surface 2 ' to be cleaned of the wafer 2 to rotate in the predetermined plane and limit the movement of the surface 2 ' to be cleaned in other directions than the rotation in the predetermined plane, for example, the support 10 may be a rotatable clamping block or a rotatable supporting column with a limiting groove.
As shown in fig. 1, the cleaning brush 20 contacts with a partial area of the surface 2 'to be cleaned of the wafer 2, and the rotation center of the surface 2' to be cleaned of the wafer 2 is located in an area where the cleaning brush 20 contacts with the surface 2 'to be cleaned of the wafer 2, and as the surface 2' to be cleaned rotates in a predetermined plane, the cleaning brush 20 contacts with a different portion of the surface 2 'to be cleaned, forming a circular cleaning area on the surface 2' to be cleaned, in which the cleaning brush 20 effects cleaning of the surface 2 'to be cleaned by relative movement with the surface 2' to be cleaned. Optionally, the length of the cleaning brush 20 is greater than the maximum distance from the rotation center of the surface to be cleaned 2 'of the wafer 2 to the edge of the surface to be cleaned 2', so as to ensure that the circular cleaning area formed on the surface to be cleaned 2 'by the cleaning brush 20 covers the entire surface to be cleaned 2' as the surface to be cleaned 2 'of the wafer 2 rotates within a preset plane, thereby achieving overall cleaning of the surface to be cleaned 2'. Optionally, the wafer 2 includes two surfaces 2 ' to be cleaned, and the number of the cleaning brushes 20 is two, and the two cleaning brushes are respectively in contact with the two surfaces 2 ' to be cleaned of the wafer 2, so as to simultaneously clean the two surfaces 2 ' to be cleaned. Alternatively, the cleaning brush 20 is rotated about a rotation axis which is parallel to the surface to be cleaned 2', the cleaning effect being further improved by the rotation of the cleaning brush 20 itself.
The liquid supply pipeline 30 is located outside the surface 2 ' to be cleaned of the wafer 2, as shown in fig. 2, the liquid supply pipeline 30 is provided with a plurality of liquid outlets 31 at intervals, and each liquid outlet 31 faces the surface 2 ' to be cleaned so as to spray the cleaning liquid to the surface 2 ' to be cleaned. Specifically, the liquid supply pipeline 30 is connected to a liquid supply pump, the liquid supply pump extracts the cleaning liquid from the liquid storage device and supplies the cleaning liquid to the liquid supply pipeline 30, hydraulic pressure is established in the liquid supply pipeline 30, the cleaning liquid is sprayed out from the liquid outlet 31 under the action of the hydraulic pressure and is sprayed on the surface 2 'to be cleaned of the wafer 2, and the cleaning liquid is contacted with dirt and oxide on the cleaning surface 2' to dissolve or corrode the dirt and oxide and is carried away from the surface 2 'to be cleaned by the cleaning brush 20, so that the surface 2' to be cleaned is cleaned. Alternatively, the liquid supply line 30 may be located at any position outside the surface to be cleaned 2 'that enables spraying of the cleaning liquid onto the surface to be cleaned 2', for example, the liquid supply line 30 may be located below the center of rotation of the surface to be cleaned 2 'to spray the cleaning liquid onto the surface to be cleaned 2' in the form of pressurized spray; the liquid supply line 30 may also be located above the rotation center of the surface to be cleaned 2 ', and the liquid supply line 30 is disposed above the outer side of the surface to be cleaned 2 ' of the wafer 2 to reduce the hydraulic pressure required for spraying the cleaning liquid, by moving the cleaning liquid from the liquid outlet 31 to the surface to be cleaned 2 ' under the combined action of the hydraulic pressure in the liquid supply line 30 and the gravity of the cleaning liquid. For convenience of explanation, a specific configuration of the cleaning apparatus 1 will be described below, taking as an example the case where the liquid supply line 30 is located above the rotation center of the surface to be cleaned 2'.
Wherein, the closer the point on the surface to be cleaned 2 'is to the rotation center of the surface to be cleaned 2', the higher the density of the cleaning liquid sprayed by the point is, i.e., the closer the point on the surface to be cleaned 2 'is to the rotation center of the surface to be cleaned 2', the higher the concentration of the cleaning liquid at the point is. The spraying of the cleaning solution with variable concentration can be realized in various different manners, and optionally, the cleaning device 1 comprises a plurality of liquid supply pipelines, each liquid supply pipeline is used for spraying the cleaning solution with different concentration, and the closer the liquid supply pipeline is to the rotation center of the surface to be cleaned 2', the higher the concentration of the cleaning solution sprayed by the liquid supply pipeline is; alternatively, the supply line 30 is provided with liquid outlets 31 having different apertures, and the aperture of the liquid outlet 31 is larger the closer the liquid outlet is to the rotation center of the surface to be cleaned 2'.
It should be noted that, when the cleaning brush 20 contacts with the surface 2 'to be cleaned, the cleaning brush 20 absorbs the cleaning liquid dissolving the dirt and the oxide of the surface 2' to be cleaned (for convenience of description, the absorbed cleaning liquid dissolving the dirt and the oxide of the surface 2 'to be cleaned is referred to as a low concentration liquid), but as the cleaning process continues, the absorption capacity of the cleaning brush 20 reaches saturation, at this time, when the cleaning brush 20 contacts with the surface 2' to be cleaned, on one hand, the cleaning liquid on the surface 2 'to be cleaned is carried away by friction, on the other hand, the previously absorbed low concentration liquid is released, the low concentration liquid dilutes the cleaning liquid sprayed onto the surface 2' to be cleaned, and the longer the time the surface 2 'to be cleaned contacts with the cleaning brush 20, the greater the amount of the low concentration liquid released by the cleaning brush 20 is received by the area where the surface 2' to be cleaned contacts with the cleaning brush 20, the more diluted the cleaning liquid in this region.
During the rotation of the surface to be cleaned 2 'on the preset plane, a partial region of the surface to be cleaned 2' is continuously in contact with the cleaning brush 20 (for convenience of explanation, a region where the surface to be cleaned 2 'is continuously in contact with the cleaning brush 20 is hereinafter referred to as a continuous contact region), another partial region of the surface to be cleaned 2' is intermittently in contact with the cleaning brush 20 (for convenience of explanation, a region where the surface to be cleaned 2 'is intermittently in contact with the cleaning brush 20 is hereinafter referred to as an intermittent contact region), the duration of the continuous contact region of the surface to be cleaned 2' with the cleaning brush 20 is longer than the duration of the intermittent contact region of the surface to be cleaned 2 'with the cleaning brush 20, the cleaning liquid sprayed on the continuous contact region of the surface to be cleaned 2' is diluted to a greater extent than the cleaning liquid sprayed on the intermittent contact region of the surface to be cleaned 2 ', that is to a lesser extent, that is the cleaning liquid concentration in the continuous contact region of the surface to be cleaned 2' than the concentrated cleaning liquid in the intermittent contact region of the surface to be cleaned 2 And (4) degree. The continuous contact area of the surface 2 ' to be cleaned is a circular area around the rotation center of the surface 2 ' to be cleaned, the center of the circular area is the rotation center of the surface 2 ' to be cleaned, and the radius of the circular area is the minimum distance between the rotation center of the surface 2 ' to be cleaned and the edge of the area where the cleaning brush 20 contacts the surface 2 ' to be cleaned.
Meanwhile, the centrifugal force generated by the surface 2 ' to be cleaned of the wafer 2 in the rotating process can make the cleaning liquid sprayed on the surface 2 ' to be cleaned move towards the edge of the surface 2 ' to be cleaned, so that the closer the point of the surface 2 ' to be cleaned is to the rotating center of the surface 2 ' to be cleaned, the lower the concentration of the cleaning liquid is. Under the combined action of dilution of the cleaning liquid on the surface 2 'to be cleaned by the cleaning brush 20 and the centrifugal force generated during rotation of the surface 2' to be cleaned to drive the cleaning liquid to move toward the edge of the surface 2 'to be cleaned, the closer the point on the surface 2' to the rotation center, the lower the concentration of the cleaning liquid at that point. The concentration distribution of the cleaning liquid sprayed to the surface 2 ' to be cleaned by the cleaning device 1 is set to be that the closer the point on the surface 2 ' to be cleaned is to the rotation center of the surface 2 ' to be cleaned, the higher the density of the cleaning liquid sprayed at the point is, the local thickening can be performed on the area with low concentration of the cleaning liquid on the surface 2 ' to be cleaned, so that the concentrations of the cleaning liquid at each point of the surface 2 ' to be cleaned are consistent, and the surface of the wafer 2 after cleaning has good consistency.
It should be understood by those skilled in the art that the closer a point on the surface to be cleaned is to the center of rotation of the surface to be cleaned, the higher the density of the cleaning liquid sprayed by the point is, and it should not be simply understood that the relationship between the distance between the point on the surface to be cleaned and the center of rotation and the concentration of the cleaning liquid sprayed may be a continuous linear variation relationship, and the relationship between the distance between the point on the surface to be cleaned and the center of rotation and the concentration of the cleaning liquid sprayed may also be an abrupt change relationship or a non-linear variation relationship. Illustratively, in a state that the rotation speed of the surface to be cleaned is less than a preset threshold, the centrifugal force generated by the rotation of the surface to be cleaned is small, the influence of the cleaning liquid on the surface to be cleaned is negligible, the relationship between the distance between the point on the surface to be cleaned and the rotation center and the concentration of the sprayed cleaning liquid is as shown in fig. 3, the concentration of the cleaning liquid sprayed at each point in the continuous contact area is the same, the concentration of the cleaning liquid sprayed at each point in the non-continuous contact area is the same, and the concentration of the cleaning liquid sprayed at the continuous contact area of the surface to be cleaned 2 'is greater than the concentration of the cleaning liquid sprayed at the non-continuous contact area of the surface to be cleaned 2'; in a state where the rotation speed of the surface to be cleaned 2 ' is greater than the preset threshold, a relationship between a distance between a point on the surface to be cleaned and the rotation center and a concentration of the cleaning liquid to be sprayed is as shown in fig. 4, where the closer the point on the surface to be cleaned 2 ' is to the rotation center of the surface to be cleaned, the higher the concentration of the cleaning liquid to be sprayed is, specifically, a functional relationship between the distance between the point on the surface to be cleaned 2 ' and the rotation center and the concentration of the cleaning liquid to be sprayed at the point is:
in the formula, x represents the distance between the point of the surface to be cleaned 2 'and the rotation center of the surface to be cleaned 2'; p represents the concentration of the cleaning liquid at that point; k represents the rate of change of the concentration of the cleaning liquid with increasing distance from the center of rotation, b1And b2Are all constants. The reduction rate K of the continuous contact area and the non-continuous change area is the same, and the change rate is in positive correlation with the rotating speed of the surface 2 ' to be cleaned of the wafer 2, namely, the faster the rotating speed of the surface 2 ' to be cleaned is, the greater the influence of centrifugal force on the distribution of the cleaning liquid is, and the influence of the centrifugal force on the part of the cleaning liquid on the surface 2 ' to be cleaned is compensated by setting the larger change rate; constant b1Greater than constant b2It means that the concentration of the cleaning liquid at the point increases with the decrease of the distance between the point of the surface to be cleaned and the rotation center, and the continuous contact area is subjected to secondary thickening, so that the influence of the dilution effect of the low-concentration liquid on the cleaning liquid on the concentration distribution of the cleaning liquid by the cleaning brush 20 is compensated, the uniform distribution of the concentration of the cleaning liquid on the surface to be cleaned 2' is ensured, and the surface of the cleaned wafer 2 has good consistency.
The utility model provides a belt cleaning device of wafer, including being used for the rotatory support of drive wafer, the liquid supply pipeline that the face of cleaning of treating with the wafer was provided with the liquid outlet, the liquid outlet can be to the face of cleaning of treating of wafer spray the cleaning solution, it is nearer more apart from the center of rotation of treating the face of cleaning to set up the point on treating the face of cleaning through the structure with belt cleaning device, the density of the washing liquid that this point department was sprayed is higher, the low concentration liquid that has compensated the cleaning brush release is to the influence of the distribution of washing liquid on treating the face of cleaning, and the centrifugal force of the rotatory production of treating the face of cleaning of wafer is to the influence of the distribution of washing liquid on treating the face of cleaning, thereby guaranteed the evenly distributed of washing liquid on treating the face of cleaning, and then the surface of the wafer after making the washing has good uniformity.
In some embodiments, as shown in fig. 5 (the outer contour line of the wafer in fig. 5 is a two-dot chain line, which indicates that the wafer is not a part of the liquid supply line 30, and the wafer is drawn in fig. 5 only for indicating the relative position of the liquid supply line 30 and the wafer), the aperture of the liquid outlet 31 is larger as the liquid outlet 31 is closer to the rotation center O of the surface to be cleaned 2'. Specifically, each of the liquid outlets 31 can spray the cleaning liquid to cover a partial area of the surface 2 'to be cleaned (for convenience of description, this area is referred to as a coverage area of the liquid outlet 31 hereinafter), and when a point on the surface 2' to be cleaned is located in the coverage area of the plurality of liquid outlets 31 at the same time, it is described that the plurality of liquid outlets 31 can spray the cleaning liquid to this point at the same time, and the greater the number of the liquid outlets 31 that can spray the cleaning liquid to this point at the same time, the higher the density of the cleaning liquid sprayed to this point is, and the higher the concentration of the cleaning liquid at this point is. The closer the liquid outlet 31 is to the rotation center O of the surface to be cleaned 2 ', the larger the aperture of the liquid outlet 31, the larger the coverage of the liquid outlet 31, and the closer the point of the surface to be cleaned 2' is to the rotation center O, the more likely the point is to be sprayed with the cleaning liquid by the larger number of liquid outlets at the same time, that is, the more likely the point is to be sprayed with the higher density of the cleaning liquid.
It should be noted that, depending on the size and shape of the coverage area of the liquid outlet 31, in a small area on the surface to be cleaned 2 ', there may be a phenomenon that the density of the cleaning liquid sprayed from a point having a large distance from the rotation center O is higher than the density of the cleaning liquid sprayed from a point having a small distance from the rotation center O, but by making the aperture of the liquid outlet 31 larger as the liquid outlet 31 is closer to the rotation center O of the surface to be cleaned 2', it can be ensured that the overall trend of the distance between the point of the surface to be cleaned 2 'and the rotation center O and the density of the cleaning liquid sprayed from the point is still the closer the point of the surface to be cleaned 2' and the rotation center O is the higher the density of the cleaning liquid sprayed from the point. In the embodiments provided in the following examples, it is also possible that in a small range of the surface to be cleaned 2 ', the density of the cleaning liquid sprayed from a point having a large distance from the rotation center O is higher than the density of the cleaning liquid sprayed from a point having a small distance from the rotation center O, but it will be understood by those skilled in the art that, as long as it is ensured that, in the overall range of the surface to be cleaned 2 ', the overall tendency of the distance from the point of the surface to be cleaned 2 ' to the rotation center O and the density of the cleaning liquid sprayed from the point remains to be closer to the point of the surface to be cleaned 2 ' to the rotation center O, the density of the cleaning liquid sprayed from the point is higher, it should be considered that this particular fact provides an implementation that the closer to the rotation center O of the surface to be cleaned the point on the surface to be cleaned is achieved, the higher density of the cleaning liquid sprayed from the point is higher, thereby ensuring that the cleaning liquid is uniformly distributed on the surface to be cleaned 2 ', thereby ensuring that the cleaned surface has good consistent technical effect.
In some embodiments, as shown in fig. 6 (the outer contour line of the wafer in fig. 6 is a two-dot chain line, which indicates that the wafer is not a part of the liquid supply pipeline 30, and the wafer is drawn in fig. 6 only for illustrating the relative position relationship between the liquid supply pipeline 30 and the wafer), the closer the point on the surface to be cleaned 2 'is to the rotation center O of the surface to be cleaned, the more the number of liquid outlets 31 capable of spraying the cleaning liquid to the point is, so that the closer the point on the surface to be cleaned 2' is to the rotation center O, the more likely the point is to be sprayed with the cleaning liquid by the more the number of liquid outlets at the same time, that is, the more likely the point is to be sprayed with the cleaning liquid. The liquid outlet 31 is capable of spraying the cleaning liquid to a point on the surface to be cleaned 2 ', and means that the point is located within a coverage area of the liquid outlet 31, specifically, the liquid supply line 30 is uniformly divided into a plurality of liquid spraying areas along the extending direction of the liquid supply line 30, the closer the liquid spraying area of the liquid supply line 30 is to the rotation center of the surface to be cleaned 2', the greater the number of the liquid outlets 31 arranged in the liquid spraying area, wherein the distance between the liquid spraying area and the rotation center O may be represented in different manners, for example, the distance between the geometric center of the liquid spraying area and the rotation center O may be the sum of the distances between all the points in the liquid spraying area and the rotation center O.
In some embodiments, as shown in fig. 7, the cleaning apparatus 1 further includes a nozzle 40, the nozzle 40 is in communication with the liquid outlet 31 and can open or close the liquid outlet 31, wherein the closer the point of the surface to be cleaned is to the rotation center of the surface to be cleaned, the greater the number of open liquid outlets 31 capable of spraying the cleaning liquid to the point is, so that the closer the point of the surface to be cleaned 2 'is to the rotation center, the more likely the point is to be sprayed with the cleaning liquid at the same time by the greater number of liquid outlets, that is, the more likely the point is to be sprayed with the higher density of the cleaning liquid, and at the same time, the opening and closing of each liquid outlet 31 is adjusted by the nozzle 40, so that the cleaning apparatus 1 can adaptively adjust the opening or closing state of each liquid outlet 31 according to the size and shape of the surface to be cleaned 2', thereby enabling the cleaning apparatus 1 to be suitable for cleaning wafers of various sizes and shapes.
In some embodiments, as shown in fig. 7, the nozzle 40 includes an open nozzle 41 and a closed nozzle 42, the open nozzle 41 is provided with a liquid outlet 411 for communicating with the liquid outlet 31, and the closed nozzle 42 is provided with a sealing surface for sealing the liquid outlet 31, and the sealing surface is tightly attached to the liquid outlet 31, so as to achieve reliable sealing of the liquid outlet 31 and ensure that the cleaning liquid does not leak from the closed nozzle 42. The opening and closing of the liquid outlet 31 is controlled by the structure of the open nozzle 41 and the closed nozzle 42 itself without providing a control structure and a control system, reducing the manufacturing cost of the cleaning apparatus 1. Alternatively, both the open nozzles 41 and the closed nozzles 42 are detachably connected to the liquid supply line 30, and the distribution of the open nozzles 41 and the closed nozzles 42 on the liquid supply line 30 can be adaptively adjusted according to the shape and size of the wafer, so that the cleaning apparatus 1 can be suitably used for cleaning various sizes and shapes of wafers.
Alternatively, as shown in fig. 8, there are a plurality of liquid spraying ports 411 of the open nozzle 41, and each of the liquid spraying ports 411 is respectively communicated with the liquid outlet 31, so as to further disperse the liquid flow of the cleaning liquid sprayed from the liquid outlet 31 into a plurality of liquid flows, and respectively spray the plurality of liquid flows of the cleaning liquid to different positions of the surface to be cleaned 2 ', thereby further making the portion of the cleaning liquid on the surface to be cleaned 2' more uniform. Alternatively, the closer the liquid ejection port 411 of the open nozzle 41 is to the rotation center of the surface to be cleaned 2 ', the larger the aperture of the liquid ejection port 411 is, so that the closer the point of the surface to be cleaned 2' is to the rotation center O, the more likely the point is to be simultaneously sprayed with the cleaning liquid by the larger number of liquid outlets, that is, the higher the density of the cleaning liquid that the point is likely to be sprayed with.
In some embodiments, the open nozzle 41 is rotatably connected to the liquid supply line 30, and in particular, the open nozzle 41 is rotated around the axis of the liquid supply line 30, and by rotating the open nozzle 41, the angle at which the open nozzle 41 sprays the cleaning liquid can be adjusted, so that the angle at which the open nozzle 41 sprays the cleaning liquid can be adaptively adjusted according to the shape and size of the wafer, thereby enabling the cleaning apparatus to be suitable for cleaning wafers of different shapes and sizes.
Further, as shown in fig. 9, the cleaning device 1 further includes a nozzle driving member 50, the nozzle driving member 50 is connected to the open nozzle 41, the liquid spraying opening 411 of the open nozzle 41 is driven to switch between the first position and the second position, and during the switching of the liquid spraying opening 411 of the open nozzle 41 between the first position and the second position, the liquid spraying opening 411 sprays the cleaning liquid onto different positions of the surface 2 'to be cleaned, so that the distribution of the cleaning liquid on the surface 2' to be cleaned is more uniform.
Further, the distance between the liquid spraying opening 411 and the rotation center of the surface to be cleaned 2 'at the first position is smaller than the distance between the liquid spraying opening 411 and the rotation center of the surface to be cleaned 2' at the second position, and the closer the liquid spraying opening 411 is to the first position, the slower the rotation speed of the liquid spraying opening 411 of the open nozzle 41 driven by the nozzle driving member 50 is, that is, the closer the point of the surface to be cleaned 2 'is to the rotation center, the longer the time that the liquid spraying opening 411 can spray the cleaning liquid to the point is, and the higher the concentration of the cleaning liquid at the point is, the local thickening of the area with low concentration of the cleaning liquid on the surface to be cleaned 2' is realized, so as to ensure the concentration of the cleaning liquid at each point of the surface to be cleaned 2 'to be consistent, and thus ensure that the surface to be cleaned 2' of the cleaned wafer 2 has good consistency. It should be noted that the nozzle driving member is any structure capable of driving the open nozzle to switch between the first position and the second position, and the specific structure and operation principle of the nozzle driving member are exemplarily described below with reference to fig. 10 and 11, respectively, and it should be noted that the nozzle driving member may also be other structures besides the structure shown in fig. 10 and 11.
As shown in fig. 10, the first type of nozzle drive member 50A includes a mounting bracket 51A, a linear motor 52A, and a return spring 53A, and both the linear motor 52A and the return spring 53A are fixed to the mounting bracket 51A. The outer surface of the open nozzle 41 is provided with a drive boss 412, the bottom of the drive boss 412 is in contact with the end of the output shaft 521A of the linear motor 52A, and the top of the drive boss 412 is in contact with the return reed 53A. In the process that the linear motor 52A drives the output shaft 521A to extend, the output shaft 521A drives the open nozzle 41 to rotate clockwise in the plane shown in fig. 10, and simultaneously, the boss 412 is driven to elastically deform the return reed 53A; in the process of the linear motor 52A driving the retraction of the output shaft 521A, the elastic force of the return reed 53A drives the open nozzle 41 to rotate counterclockwise in the plane shown in fig. 10.
As shown in fig. 11, the second type of nozzle driving member 50B includes a rotary motor 51B and a driving gear 52B, an output shaft of the rotary motor 51B is connected to the driving gear 52B, a ring gear 413 is provided on an outer surface of the open nozzle 41, the driving gear 52B is engaged with the ring gear 413, and the rotary motor 51B rotates the driving gear 52B to drive the open nozzle 41 to rotate.
In some embodiments, nozzle 40 is provided with a spout in communication with the liquid outlet with a control valve for controlling the opening and closing of the spout. Alternatively, the nozzle 40 may be detachably connected to the liquid supply line 30 so that the damaged nozzle can be replaced individually when the nozzle 40 is damaged, without replacing the entire liquid supply line 30. Optionally, as shown in fig. 12, a positioning boss 32 is disposed between the liquid outlets 31 along the length direction of the liquid supply pipeline 30, and the distance between adjacent positioning bosses 32 is the same as the width of the nozzle 40, so as to facilitate positioning of the nozzle 40 during installation and ensure that the nozzle 40 can communicate with the liquid outlets 31.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (10)
1. An apparatus for cleaning a wafer, comprising:
the bracket drives the surface to be cleaned of the wafer to rotate in a preset plane;
the cleaning brush is in contact with a partial area of the surface to be cleaned of the wafer, and the rotation center of the surface to be cleaned of the wafer is positioned in the area where the cleaning brush is in contact with the surface to be cleaned of the wafer;
the liquid supply pipeline is positioned on the outer side of the surface to be cleaned of the wafer, a plurality of liquid outlets are arranged at intervals on the liquid supply pipeline, and each liquid outlet faces the surface to be cleaned so as to spray cleaning liquid to the surface to be cleaned;
wherein the closer a point on the surface to be cleaned is to the center of rotation of the surface to be cleaned, the higher the density of the cleaning liquid sprayed by the point.
2. The cleaning apparatus defined in claim 1, wherein the aperture of the liquid outlet is larger the closer the liquid outlet is to the center of rotation of the surface to be cleaned;
and/or the presence of a gas in the gas,
the closer a point on the surface to be cleaned is to the rotation center of the surface to be cleaned, the larger the number of the liquid outlets capable of spraying cleaning liquid to the point.
3. The cleaning device of claim 1, further comprising:
the nozzle is communicated with the liquid outlet and can open or close the liquid outlet;
wherein the closer a point of the surface to be cleaned is to a rotation center of the surface to be cleaned, the greater the number of the opened liquid outlets capable of spraying cleaning liquid to the point.
4. The cleaning device of claim 3, wherein the nozzle comprises:
the open nozzle is provided with a liquid spraying port communicated with the liquid outlet;
the closed nozzle is provided with a closed surface for closing the liquid outlet;
wherein, the closer the area of the surface to be cleaned is to the rotation center of the surface to be cleaned, the greater the number of the liquid outlets communicating with the liquid spray opening of the open nozzle among the liquid outlets capable of spraying the cleaning liquid to the point.
5. The cleaning apparatus according to claim 4, wherein the number of the liquid discharge ports of the open nozzle is plural.
6. The cleaning device according to any one of claims 3 to 5, wherein the nozzle is detachably connected to the liquid supply line.
7. The cleaning device according to claim 6, wherein positioning bosses are arranged between the liquid outlets along the length direction of the liquid supply pipeline, and the distance between the adjacent positioning bosses is the same as the width dimension of the nozzle.
8. The cleaning device of claim 4 or 5, wherein the open nozzle is rotatably connected to the liquid supply line.
9. The cleaning device of claim 8, further comprising:
and the nozzle driving piece is connected with the open nozzle and drives the liquid spraying port of the open nozzle to switch between a first position and a second position.
10. The cleaning device according to claim 9, wherein a distance from a rotation center of the surface to be cleaned in the first position of the liquid ejection port is smaller than a distance from the rotation center of the surface to be cleaned in the second position of the liquid ejection port;
the closer the liquid ejecting port is to the first position, the slower the rotation speed of the nozzle driving member for driving the liquid ejecting port of the open nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022885479.5U CN214078346U (en) | 2020-12-03 | 2020-12-03 | Wafer cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022885479.5U CN214078346U (en) | 2020-12-03 | 2020-12-03 | Wafer cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214078346U true CN214078346U (en) | 2021-08-31 |
Family
ID=77455208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022885479.5U Active CN214078346U (en) | 2020-12-03 | 2020-12-03 | Wafer cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214078346U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114985360A (en) * | 2022-08-05 | 2022-09-02 | 江苏京创先进电子科技有限公司 | Belt cleaning device and cascade belt cleaning device suitable for scribing machine |
-
2020
- 2020-12-03 CN CN202022885479.5U patent/CN214078346U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114985360A (en) * | 2022-08-05 | 2022-09-02 | 江苏京创先进电子科技有限公司 | Belt cleaning device and cascade belt cleaning device suitable for scribing machine |
| CN114985360B (en) * | 2022-08-05 | 2022-11-15 | 江苏京创先进电子科技有限公司 | Belt cleaning device and cascade belt cleaning device suitable for scribing machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101088785B1 (en) | Polishing apparatus and polishing method | |
| US10049900B2 (en) | Substrate treatment method | |
| KR20210127668A (en) | Wafer cleaning apparatus and wafer processing apparatus | |
| US7862663B2 (en) | Methods for processing a substrate with a flow controlled meniscus | |
| KR100328607B1 (en) | Combined slurry dispenser and rinse arm and method of operation | |
| KR100897428B1 (en) | Substrate cleaning apparatus and substrate cleaning method | |
| EP1582269A1 (en) | Proximity meniscus manifold | |
| EP1583138A1 (en) | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer | |
| KR20160131243A (en) | Substrate cleaning apparatus | |
| CN214078346U (en) | Wafer cleaning device | |
| JP2017532790A (en) | Polishing pad cleaning system employing a fluid outlet directed to direct fluid down the spray body and toward the inlet port, and methods related thereto | |
| TW202132049A (en) | Cleaning apparatus and polishing apparatus | |
| US20180012780A1 (en) | Substrate processing apparatus | |
| KR101283307B1 (en) | Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and proximity substrate preparation sequence, and methods, apparatus, and systems for implementing the same | |
| CN111081585A (en) | Spray device and cleaning equipment | |
| CN113471108B (en) | Vertical rotatory processing apparatus of wafer based on marangoni effect | |
| CN217289474U (en) | Cleaning device and cleaning system | |
| CN219233267U (en) | Wafer post-processing device | |
| KR20110077705A (en) | The apparatus and method for cleaning single wafer | |
| KR20090057797A (en) | Wafer cleaning apparatus | |
| JP2015015284A (en) | Substrate cleaning device and substrate cleaning method | |
| JPS61296724A (en) | High-pressure jet scrubber washer | |
| CN218677069U (en) | Wafer cleaning device | |
| TWI824514B (en) | Method and system for removing impurities during chemical mechanical planarization | |
| US20230191460A1 (en) | Cleaning device and cleaning method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |