CN213984858U - Monocrystalline silicon piece thickness measuring device and degumming machine comprising same - Google Patents
Monocrystalline silicon piece thickness measuring device and degumming machine comprising same Download PDFInfo
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- CN213984858U CN213984858U CN202022461891.4U CN202022461891U CN213984858U CN 213984858 U CN213984858 U CN 213984858U CN 202022461891 U CN202022461891 U CN 202022461891U CN 213984858 U CN213984858 U CN 213984858U
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Abstract
The utility model provides a monocrystalline silicon piece thickness measurement device, include: a body; the body is provided with a plurality of grooves for measuring the thickness of the silicon wafer; the groove is arranged on the upper end face of the body, and the upper end face of the groove and at least one side end face of the groove are arranged with the opening facing outwards; the widths of the grooves are different from each other; the width of the groove is not less than the minimum value of the sum of the thicknesses of the silicon wafers at the two ends of the cut silicon rod and not more than the maximum value of the sum of the thicknesses of the silicon wafers at the two ends of the silicon rod. The utility model discloses still provide a degumming machine including this measuring device. The utility model provides a measuring device, simple structure, easily operation, but each batch silicon rod both ends of rapid survey are got rid of and are cut the thickness of silicon chip and whether standard, and work efficiency is high and the practicality is wide, is suitable for getting rid of the measurement of cutting the silicon chip of the different thickness of different specifications.
Description
Technical Field
The utility model belongs to the technical field of solar energy silicon chip measuring equipment, especially, relate to a monocrystalline silicon piece thickness measurement device reaches degumming machine including this measuring device.
Background
In the silicon rod slicing process, the two ends of the silicon rod are pasted with the single crystal bar codes, meanwhile, the end face of the silicon rod has too small supporting force for the diamond wire during cutting, the diamond wire is easily wound or broken, the cutting quality of the silicon wafer is affected, and therefore the silicon wafer with a certain width is reserved on the two end faces of the silicon rod during cutting to serve as a throwing silicon wafer, so that the stability of the operation of the diamond wire and the cutting quality of the silicon wafer are guaranteed.
In the existing cutting process, the width of a single-side spin-cut silicon wafer is regulated by standards to be 1mm, the width of the silicon wafer exceeds the standard value in actual cutting, and the exceeding part is the self-loss of the silicon wafer. Meanwhile, the existing silicon wafer is gradually thinned and large-sized, and if the silicon wafer is more in self-loss, the silicon wafer yield of unit weight is reduced, which is not beneficial to cost control. In order to monitor the self-damage of the silicon slices cut on the daily line, the silicon rods are cut and then sent to a degumming machine to fall off, and the degumming operators measure the thickness of the silicon slices at two ends of each batch of silicon slices and record the thickness.
The existing measuring method for the thickness of the spin-cut silicon wafer at the end part of the monocrystalline silicon rod is to read a numerical value through a ruler, the ruler is fuzzy in scale with long-time use, the measuring time is too long, the numerical value is easy to read by mistake, the measuring efficiency is low, and the blanking operation is influenced; meanwhile, due to different proficiency of measuring personnel, the measuring result is inaccurate. The existing measurement mode adopting the ruler can not meet the requirement of field batch measurement, so how to design a measurement device for quickly and accurately measuring silicon rod silicon wafers with different specifications, provide accurate silicon wafer self-damage data, improve silicon wafer cleaning, ensure slicing quality, save operation time for subsequent procedures and timely provide reference for slicing production processes is the key for processing single crystal silicon wafers with high quality and low cost.
SUMMERY OF THE UTILITY MODEL
The utility model provides a monocrystalline silicon piece thickness measurement device reaches degumming machine including this measuring device, is particularly useful for the thickness measurement that silicon chip was got rid of and cut at monocrystalline silicon rod both ends, has solved among the prior art technical problem that silicon chip thickness measurement is inaccurate, inefficiency.
In order to solve the technical problem, the utility model discloses a technical scheme is:
a single crystal silicon wafer thickness measuring apparatus comprising:
a body;
the body is provided with a plurality of grooves for measuring the thickness of the silicon wafer;
the groove is arranged on the upper end face of the body, and the upper end face of the groove and at least one side end face of the groove are arranged with the opening facing outwards; the widths of the grooves are different from each other; the width of the groove is not less than the minimum value of the sum of the thicknesses of the silicon wafers at the two ends of the cut silicon rod and not more than the maximum value of the sum of the thicknesses of the silicon wafers at the two ends of the silicon rod.
Further, the groove depth is not less than 1/3 and not greater than 2/3 the body height.
Preferably, the groove depths are all the same and no greater than 10 mm.
Further, the grooves are arranged side by side and at intervals along the length of the body, and the distance between the grooves is at least 1 mm.
Further, the axis of the groove is crossed with the axis of the body.
Preferably, the groove axis is disposed perpendicular to the body length and across the body width.
Further, the width of the groove is gradually increased from one end of the body, and the difference between the widths of the adjacent grooves is not more than 1 mm; the side walls of the grooves are parallel and perpendicular to the upper end face of the body.
Further, the cross section of the body is rectangular, trapezoidal or polygonal, and the width of the upper end face of the body is not larger than that of the lower end face of the body.
A degumming machine comprises the measuring device as described in any one of the above, wherein the measuring device is arranged at one end close to a discharge opening of the degumming machine and is arranged in parallel along the side wall or the end wall of the degumming machine.
Further, one side of the opening of the groove is far away from the side wall or the end wall of the degumming machine; the body is away from the side wall or the end wall of the degumming machine by a certain distance.
Compared with the prior art, the utility model provides a measuring device reaches degumming machine including this measuring device, simple structure, easily operation, but each batch silicon rod both ends of rapid survey are got rid of and are cut the thickness of silicon chip and whether standard, and work efficiency is high and the practicality is wide, is suitable for the measurement of getting rid of the silicon chip of cutting of the different thickness of different specifications.
Drawings
Fig. 1 is a schematic structural diagram of a measuring device according to a first embodiment of the present invention;
fig. 2 is a top view of a measuring device according to a first embodiment of the present invention;
fig. 3 is a plan view of a measuring device according to a second embodiment of the present invention;
fig. 4 is a top view of a measuring device according to a third embodiment of the present invention;
fig. 5 is a top view of a measuring device according to a fourth embodiment of the present invention;
fig. 6 is a position diagram of a measuring device in a degumming machine according to a first embodiment of the present invention;
fig. 7 is a position diagram of a measuring device in a degumming machine according to a second embodiment of the present invention;
fig. 8 is a position diagram of a measuring device in a degumming machine according to a third embodiment of the present invention.
In the figure:
10. measuring device 11, body 12, recess
20. Degumming machine
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The embodiment provides a monocrystalline silicon piece thickness measuring device 10, as shown in fig. 1, which includes a body 11, wherein a plurality of grooves 12 for measuring the thickness of a silicon piece are arranged on the body 11; wherein, the groove 12 is arranged on the upper end face of the body 11, and the upper end face and at least one side end face of the groove 12 are arranged with the opening facing outwards, that is, when measuring silicon wafers, the throwing and cutting silicon wafers at the two ends are stacked and move together along one side of the opening of the groove 12 to one side of the length L1 of the groove 12, and the silicon wafers are stably placed; the thickness of the silicon wafer is the same as the width W1 of which groove 12, namely the width W1 of the groove 12 is the thickness of two spin-cut silicon wafers, and whether the thickness of the two spin-cut silicon wafers meets the standard thickness requirement can be judged. Preferably, the upper end face and the two side end faces of the groove 12 are through grooves with openings arranged outwards, and the lower end face of the groove 12 is matched with the edge of the silicon wafer and is a flat plane, so that the outer edge of the silicon wafer is stably placed along the lower end face of the groove 12.
In the present embodiment, the widths W1 of the grooves 12 are different from each other; the width W1 of the groove 12 is not less than the minimum value and not more than the maximum value of the sum of the silicon slice thicknesses of the two end parts of the cut silicon rod. Preferably, the width W1 of the groove 12 is not less than 2mm and not more than 10mm, because in the cutting process, the thickness of the spin-cut silicon slice on one side is required to be 1mm at least, and the sum of the thicknesses of the spin-cut silicon slices on two sides is 2mm at least; in the actual cutting process, due to the arrangement of the diamond wire net and the unevenness of the end part of the silicon rod, the thickness of a thrown silicon wafer on one side of the end part of the silicon rod is 5mm at most, and the sum of the thicknesses of the thrown silicon wafers on two sides is 10mm at most; therefore, the width W1 of the groove 12 is required to be not less than 2mm and not more than 10 mm.
Further, the depth H1 of the groove 12 is not less than 1/3 of the height H of the body 11 and not more than 2/3 of the height H of the body 11. If the depth H1 of the groove 12 is less than 1/3 of the height H of the body 11, the silicon wafer is placed unstably, and whether the thickness of the silicon wafer is matched with the width of the groove 12 or not can not be accurately measured; if the depth H1 of the groove 12 is greater than 2/3 of the height H of the body 11, the contact surface between the side surface of the silicon wafer and the side wall of the groove 12 is larger, and the depth H1 of the excessively deep groove 12 is not favorable for placing or taking out the silicon wafer. Preferably, the depth H1 of all the grooves 12 is the same and is not greater than 10mm, and too deep increases the probability of abrasion of the silicon wafer surface and even generates cracks, which affects the quality of the silicon wafer surface.
Further, the grooves 12 are arranged side by side and at intervals along the length of the body 11, the grooves 12 can be arranged at even intervals, or can be arranged at non-intervals, but the interval distance W2 of the grooves 12 is required to be at least 10mm, so that the arrangement strength between the grooves 12 can be ensured, and the service life of the measuring device 10 can be prolonged.
As shown in fig. 2-5, the axis of the groove 12 is arranged crosswise to the axis of the body 11, i.e. the axis of the groove 12 may be arranged perpendicular to the axis of the body 11, as shown in fig. 2 and 3; the axis of the groove 12 can also be inclined with the axis of the body 11, as shown in fig. 4 and 5, at this time, the included angle α between the axis of the groove 12 and the axis of the body 11 is greater than or equal to 45 ° and less than 90 °, which is more beneficial to the insertion and placement operation of silicon wafers and can reduce the breakage rate of the silicon wafers. The groove 12 may be a blind groove, as shown in fig. 3 and 5; the length L1 of the groove 12 of the blind hole is greater than 1/2 of the width L of the body 11 and less than the width L of the body, so that the precision of silicon wafer thickness measurement is facilitated. The groove 12 may also be a through-hole groove, i.e. the length L1 of the groove 12 is the same as the width L of the body 11, as shown in fig. 2 and 4; preferably, the axis of the groove 12 is perpendicular to the length of the body 11 and is disposed across the width of the body 11, as shown in fig. 2, which facilitates insertion or removal of the silicon wafer and facilitates processing.
Further, in order to satisfy the measurement of the sum of the thicknesses of the double-side spin-cut silicon wafers of different sizes, the width W1 of the groove 12 is set to be increased stepwise, i.e., the width W1 of the groove 12 is gradually increased from one end of the body 11. Preferably, the increasing size of the width W1 is not more than 1mm, namely the difference between the widths W1 of the adjacent grooves 12 is not more than 1mm, the structural arrangement can be suitable for measuring the size of the sum of the thicknesses of the spin-cut silicon wafers at two ends of different models, and has wide practicability and wide measured range; the side walls of the grooves 12 are parallel and perpendicular to the upper end face of the body 11, namely all the grooves 12 are parallel, so that the silicon wafer can be operated by personnel to be measured randomly, the sum of the thicknesses of the silicon wafers can be measured quickly and accurately, and the measuring time is saved.
Further, in this embodiment, the cross section of the body 11 is rectangular, trapezoidal or polygonal, the width of the upper end surface of the body is not greater than the width of the lower end surface of the body, the lower end surface of the body is parallel to the lower end surface of the groove 12, and the upper end surface and the lower end surface are flat planes, so that the installation and fixation of the body 11 are facilitated, the stable placement of a silicon wafer is facilitated, and the accuracy and consistency of measurement results are ensured.
In this embodiment, the body 11 is made of a plastic material or a resin material, so as to prevent the surface of the silicon wafer from being contaminated by metal and ensure the surface quality of the silicon wafer.
A degumming machine comprising a measuring device 10 as described above, the measuring device 10 being placed close to one end of the discharge opening of the degumming machine 30 and being arranged in parallel along the side or end wall of the degumming machine 30, as shown in fig. 6-7.
Further, the opening side of the groove 12 is far away from the side wall or the end wall of the degumming machine 30, and the body 11 has a certain distance from the side wall or the end wall of the degumming machine 30, so that the silicon wafer is prevented from colliding with the side wall or the end wall of the degumming machine 30 when the silicon wafer is operated, and the integrity of the silicon wafer is ensured. At one end of the feed opening of the degumming machine 30, a person stands at a position facing the degumming machine 30 and on one side of the end of the degumming machine 30, and the measuring device 10 is installed and placed beside the side wall of the degumming machine 30 close to the left-hand side of the person, as shown in fig. 6; or near the sidewall of the debonder 30 on the right-hand side of the person, as shown in fig. 7; or near the end wall of the debonder 30 where the person is aligning, as shown in fig. 8.
In the work, after the silicon wafers are degummed, the silicon wafers are cleaned and placed in a blanking groove, the two ends of the silicon wafers are taken out and spun and cut and stacked, preferably, in order to improve the operation efficiency, the measuring device 10 is arranged beside the side wall of the degumming machine 30 close to the left hand side of a worker, as shown in fig. 6, namely, after the silicon wafers which are spun and cut at the two ends are taken out and stacked by the right hand, the left hand is connected, the two silicon wafers are inserted into the groove 12 and matched with the groove 12 with the same thickness, the silicon wafers are completely vertically and stably clamped into the groove 12 and are not obliquely placed, namely, the thickness of the groove 12 is the same as the sum of the thicknesses of the silicon wafers at the two ends, namely, the sum of the thicknesses of the silicon wafers which are spun and cut at the two ends of the batch of the silicon rod is obtained; if two stacked silicon wafers cannot be placed in a certain groove 12 or can be placed in a certain groove 12 but an inclination phenomenon occurs, it means that the width of the groove 12 is not the same as the sum of the thicknesses of the silicon wafers, the groove 12 needs to be replaced again, and the thickness of the groove is matched with the thickness of the silicon wafer until the measurement is accurate.
The utility model provides a measuring device reaches degumming machine including this measuring device, simple structure, easily operation, but each batch silicon rod both ends of rapid survey are got rid of the thickness standard whether of cutting the silicon chip, and work efficiency is high and the practicality is wide, is suitable for the measurement of getting rid of the silicon chip of the different thickness of different specifications.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention, and should not be construed as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (10)
1. A single crystal silicon wafer thickness measuring apparatus, characterized by comprising:
a body;
the body is provided with a plurality of grooves for measuring the thickness of the silicon wafer;
the groove is arranged on the upper end face of the body, and the upper end face of the groove and at least one side end face of the groove are arranged with the opening facing outwards; the widths of the grooves are different from each other; the width of the groove is not less than the minimum value of the sum of the thicknesses of the silicon wafers at the two ends of the cut silicon rod and not more than the maximum value of the sum of the thicknesses of the silicon wafers at the two ends of the silicon rod.
2. The apparatus of claim 1, wherein the depth of the groove is not less than 1/3 and not more than 2/3 of the height of the body.
3. The apparatus according to claim 2, wherein the depths of the grooves are the same and not more than 10 mm.
4. A monocrystalline silicon wafer thickness measuring apparatus according to any one of claims 1 to 3 wherein the grooves are spaced side by side along the length of the body, the grooves being spaced apart by a distance of at least 10 mm.
5. The apparatus of claim 4, wherein the groove axis intersects the body axis.
6. The apparatus of claim 5, wherein the groove axis is disposed perpendicular to the length of the body and across the width of the body.
7. The apparatus for measuring the thickness of a single crystal silicon wafer according to any one of claims 1 to 3 and 5 to 6, wherein the width of the groove is gradually increased from the end of the body and the difference between the widths of the adjacent grooves is not more than 1 mm; the side walls of the grooves are parallel and perpendicular to the upper end face of the body.
8. The apparatus of claim 7, wherein the cross section of the body is rectangular, trapezoidal or polygonal, and the width of the upper end surface is not greater than the width of the lower end surface.
9. A degumming machine comprising a measuring device according to any one of claims 1 to 8, said measuring device being placed close to one end of the discharge opening of the degumming machine and being arranged in parallel along the side or end walls of said degumming machine.
10. The degumming machine according to claim 9, wherein the opening side of the groove is arranged far away from the side wall or the end wall of the degumming machine; the body is away from the side wall or the end wall of the degumming machine by a certain distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022461891.4U CN213984858U (en) | 2020-10-30 | 2020-10-30 | Monocrystalline silicon piece thickness measuring device and degumming machine comprising same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022461891.4U CN213984858U (en) | 2020-10-30 | 2020-10-30 | Monocrystalline silicon piece thickness measuring device and degumming machine comprising same |
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| Publication Number | Publication Date |
|---|---|
| CN213984858U true CN213984858U (en) | 2021-08-17 |
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| CN202022461891.4U Active CN213984858U (en) | 2020-10-30 | 2020-10-30 | Monocrystalline silicon piece thickness measuring device and degumming machine comprising same |
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