CN213937771U - Semiconductor temperature difference power generation device based on heat supply hot water pipe network - Google Patents
Semiconductor temperature difference power generation device based on heat supply hot water pipe network Download PDFInfo
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- CN213937771U CN213937771U CN202023342351.0U CN202023342351U CN213937771U CN 213937771 U CN213937771 U CN 213937771U CN 202023342351 U CN202023342351 U CN 202023342351U CN 213937771 U CN213937771 U CN 213937771U
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Abstract
The utility model relates to a semiconductor thermoelectric generation device based on heat supply hot water pipe network, including the hot junction base, hot junction base fixed mounting is on the hot-water line, hot junction base upper portion fixed mounting has the cold junction radiator, it has semiconductor thermoelectric generation module to press from both sides between hot junction base and the cold junction radiator, the semiconductor accomplishes the power generation module lower surface and contacts with the hot junction base, the upper surface contacts with the cold junction radiator, semiconductor thermoelectric generation module passes through positive negative pole lead-out wire and connects the voltage boost module, the voltage boost module is connected with battery module, battery module can store the electric energy that semiconductor thermoelectric generation module produced. The utility model discloses utilize the direct used heat with heat supply hot water pipeline low grade of seebeck effect to turn into usable high-grade electric energy, reduce the pipeline transportation loss, improve energy availability factor, realize heat supply hot water pipeline waste heat recovery, energy saving and emission reduction's target, simultaneously, the utility model discloses noiselessness, small, light in weight, long service life, energy conversion are efficient.
Description
Technical Field
The utility model relates to a semiconductor thermoelectric generation technical field especially relates to a semiconductor thermoelectric generation device based on heat supply hot water pipe network.
Background
Since the 21 st century, the global problems of energy safety and environmental ecological protection have become more severe. With the development of low carbonization of energy structures and the increasing energy consumption of China, the countries promote energy conservation of buildings and reduce energy consumption in recent years, and advocate the construction of energy-saving and environment-friendly society vigorously. The heat supply industry occupies a large proportion in the aspects of social energy consumption and pollutant discharge, and accounts for more than 1/3 of building energy consumption.
When the suspended or semi-buried hot water supply pipeline supplies hot water, a large temperature drop is formed between the outer wall of the heated high-temperature pipeline and the surrounding environment of the pipeline, and waste heat lost in the conveying process of the hot water supply pipeline is potential unutilized energy. Usually, a heat supply hot water pipeline is laid in some severe sections in an overhead crossing mode, and in severe weather such as snowfall, frost and the like in winter, safety accidents such as pipeline leakage and even bursting are easily caused, so that the production and life of downstream water supply users are greatly influenced. Therefore, the running safety and reliability of the heating hot water pipe network can be effectively improved by arranging the pipe network leakage monitoring system. The semiconductor temperature difference power generation technology is a green environment-friendly power generation mode which directly converts heat energy into electric energy by utilizing the Seebeck effect, and has certain utilization value for recovering low-grade waste heat on the outer wall of a hot water pipeline. The waste heat of the hot water pipeline is converted into electric energy by utilizing a semiconductor thermoelectric power generation technology, the electric energy is supplied to a temperature sensor, a pressure transmitter and the like of a pipe network leakage monitoring system arranged on the pipeline, unattended and regular maintenance can be realized, the engineering maintenance cost is reduced, the intelligent management is convenient, and the unification of energy conservation and emission reduction, social benefits and economic benefits is realized.
Therefore, the application provides a semiconductor temperature difference power generation device based on a heating hot water pipe network.
SUMMERY OF THE UTILITY MODEL
In order to solve at least one of the above technical problems, the present disclosure provides a semiconductor thermoelectric generation device based on a heating hot water pipe network.
The utility model discloses a technical scheme be like:
the utility model provides a semiconductor thermoelectric generation device based on heat supply hot water pipe network, includes the hot junction base, hot junction base fixed mounting be in on the hot water pipe, hot junction base upper portion fixed mounting has the cold junction radiator, the hot junction base with the semiconductor thermoelectric generation module is equipped with to the clamp between the cold junction radiator, the semiconductor accomplish the power generation module lower surface with hot junction base contact, upper surface with the cold junction radiator contact, the semiconductor thermoelectric generation module is through positive negative pole lead-out wire connection voltage boost module, the voltage boost module is connected with battery module, battery module can store the electric energy that semiconductor thermoelectric generation module produced.
Preferably, the cooling fan is fixedly installed on the upper portion of the voltage boosting module and connected with the voltage boosting module, the voltage boosting module can provide working electric energy for the cooling fan, and the air outlet of the cooling fan is aligned to the cold end radiator.
Preferably, the battery module is connected to the cooling fan, and the battery module can provide working power for the cooling fan.
Preferably, the battery module is a detachable portable battery.
Preferably, the voltage boosting module is connected with a pipe network leakage sensor and provides working electric energy for the pipe network leakage sensor.
Preferably, the lower part of the hot end base is an arc-shaped substrate, the upper part of the hot end base is a horizontal base platform, the arc-shaped substrate is used for being attached to the surface of the hot water pipe, and the horizontal base platform is used for mounting the cold end radiator and the semiconductor thermoelectric power generation module.
Preferably, a fixing gasket is clamped between the hot end base and the cold end radiator, a through hole is formed in the fixing gasket, and the semiconductor thermoelectric generation module is installed in the through hole and matched with the semiconductor thermoelectric generation module.
Preferably, the fixing spacer is made of a heat insulating material.
To sum up, the utility model discloses semiconductor thermoelectric generation module upper and lower surface is in certain difference in temperature scope all the time, utilizes seebeck effect directly to turn into usable high-grade electric energy with the low-grade used heat of heat supply hot-water line, reduces pipeline transportation loss, improves energy utilization efficiency, realizes heat supply hot-water line waste heat recovery, energy saving and emission reduction's target, simultaneously, the utility model discloses noiselessness, small, light in weight, long service life, energy conversion are efficient.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the disclosure and together with the description serve to explain the principles of the disclosure.
FIG. 1 is a schematic view of the present invention;
fig. 2 is an exploded view of the middle-hot end base, the cold end radiator, the semiconductor thermoelectric power generation module, the fixing gasket and the semiconductor thermoelectric power generation device of the present invention;
FIG. 3 is a top view of the middle hot end base, the semiconductor thermoelectric generation module, and the fixing pad of the present invention;
fig. 4 is a schematic view of the middle fixing pad of the present invention.
The labels in the figure are: the thermoelectric power generation device comprises a hot end base 1, a hot water pipe 2, a cold end radiator 3, a semiconductor thermoelectric power generation module 4, a voltage boosting module 5, a storage battery module 6, a cooling fan 7, a fixing gasket 8, a through hole 9 and a semiconductor thermoelectric power generation device 10.
Detailed Description
The present disclosure will be described in further detail with reference to the drawings and embodiments. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not to be construed as limitations of the present disclosure. It should be further noted that, for the convenience of description, only the portions relevant to the present disclosure are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present disclosure may be combined with each other without conflict. The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
As shown in fig. 1 to 4, a semiconductor thermoelectric power generation device based on a heat supply hot water pipe network comprises a hot end base 1, wherein the hot end base 1 is fixedly installed on a hot water pipe 2, a cold end radiator 3 is fixedly installed on the upper portion of the hot end base 1, a semiconductor thermoelectric power generation module 4 is clamped between the hot end base 1 and the cold end radiator 3, the lower surface of the semiconductor thermoelectric power generation module is in contact with the hot end base 1, the upper surface of the semiconductor thermoelectric power generation module is in contact with the cold end radiator 3, the semiconductor thermoelectric power generation module 4 is connected with a voltage boosting module 5 through a positive lead wire and a negative lead wire, the voltage boosting module 5 is connected with a storage battery module 6, the storage battery module 6 can store electric energy generated by the semiconductor thermoelectric power generation module 4, and surplus electric energy in the storage battery module 6 can provide electric energy for a pipe network leakage sensor (not shown in the figure), such as temperature sensors, pressure sensors, etc.; the semiconductor thermoelectric generation module 4 is formed by sequentially arranging and connecting a plurality of semiconductor thermoelectric generation devices 10 in series at equal intervals, an anode connecting wire and a cathode connecting wire of the semiconductor thermoelectric generation module are alternately connected, an outer-end anode outgoing wire is led out from the first semiconductor thermoelectric generation device 10, an outer-end cathode outgoing wire is led out from the tail semiconductor thermoelectric generation device 10, and the anode outgoing wire and the cathode outgoing wire are connected with the voltage boosting module 5; the hot end base 1 is made of metal heat conducting fins or semiconductor heat conducting fins; the battery module 6 is a rechargeable low-current battery.
When high-temperature hot water flows through the heat supply hot water pipe 2, part of heat of the high-temperature hot water is conducted through the outer wall of the hot water pipe 2 to form a high-temperature pipeline outer wall; on the other hand, the cold end radiator 3 and ambient air carry out convective heat transfer to form a low temperature cold source end; the heat of the hot water is transmitted into the semiconductor temperature difference power generation module 4, so that a certain temperature difference is generated inside the semiconductor temperature difference power generation module 4, the Seebeck voltage is further formed to generate electric power, the current flows into the voltage boosting module 5 through the positive and negative electrode outgoing lines, and the current is boosted by the voltage booster and then outputs stable and available electric energy to the outside and can be stored in the storage battery module 6.
The semiconductor thermoelectric generation module 4 is characterized by further comprising a heat radiation fan 7, wherein the heat radiation fan 7 is fixedly mounted on the upper portion of the voltage boosting module 5 and connected with the voltage boosting module 5, the voltage boosting module 5 can provide working electric energy for the heat radiation fan 7, an air outlet of the heat radiation fan 7 is aligned with the cold end radiator 3, the heat radiation fan 7 is a low-voltage low-power fan, and after the heat radiation fan 7 is electrified, fan blade driving air carries out forced convection heat exchange on the cold end radiator 3, so that the temperature of a cold end is further reduced, the semiconductor thermoelectric generation module 4 is further ensured to be always kept at a certain temperature difference, and electric energy can be generated and output continuously; further, the battery module 6 is connected to the heat dissipation fan 7, and the battery module 6 can provide working power for the heat dissipation fan 7; aiming at the source of the touch power, the storage battery module 66 is connected behind the voltage boosting module 5, and when the heat radiation fan 7 can be independently supplied with power by the semiconductor temperature difference power generation module 4 and the voltage boosting module 5 and normally operates, the storage battery module 6 stores the surplus power of the semiconductor temperature difference power generation module 4; when a hot water supply pipe network starts to supply hot water, the temperature of the hot water conveyed initially is not high, the outer wall of the pipeline is not heated to a high enough temperature, the electric energy generated by the semiconductor temperature difference power generation module 4 is not enough to drive the cooling fan 7 to rotate to form a cold source end, and the surplus electric energy stored in the storage battery module 6 provides triggering electric power support for the cooling fan 7, so that the device can be ensured to be started to operate; when the hot water supply is stable, the outer wall of the pipeline forms a high-temperature hot end source, and the cold end radiator 3 forms a cold end source, so that the upper surface and the lower surface of the semiconductor thermoelectric generation module 4 are maintained in the working temperature difference range, and the storage battery module 6 continuously stores surplus electric energy generated by the semiconductor thermoelectric generation module 4 and does not supply power to the cooling fan 7 any more, thereby completing the original triggering electric energy support work.
Further, the battery module 6 is a detachable portable battery; when the surplus electric energy stored in the storage battery module 6 reaches the maximum limit capacity of the storage battery module, a new storage battery can be disassembled and replaced to continuously store the surplus electric energy generated by the semiconductor temperature difference power generation module 4; or when the electric quantity stored in the storage battery module 6 is not enough to trigger the cooling fan 7 to work, a new storage battery can be disassembled and replaced, thereby ensuring the original triggering electric energy support of the device.
Further, the lower part of the hot end base 1 is an arc-shaped substrate, the upper part of the hot end base is a horizontal base platform, the arc-shaped substrate is used for being attached to the surface of the hot water pipe 2, and the horizontal base platform is used for mounting the cold end radiator 3 and the semiconductor thermoelectric generation module 4; the arc-shaped substrate enables the matching performance of the whole hot end base 1 and the hot water pipe 2 to be better, the heat transfer efficiency to be higher and the installation to be more stable and reliable; the horizontal base station provides a stable and reliable installation foundation for the cold end radiator 3 and the semiconductor thermoelectric generation module 4.
Furthermore, a fixing gasket 8 is clamped between the hot end base 1 and the cold end radiator 3, a through hole 9 is formed in the fixing gasket 8, and the semiconductor thermoelectric generation module 4 is installed in the through hole 9 and matched with the same; the fixing gasket 8 can be used for positioning and fixing the semiconductor temperature difference power generation module 4, and the fixing gasket 8 can prevent the region, which is not covered with the semiconductor temperature difference power generation module 4, on the hot end base 1 from being directly contacted with the cold end radiator 3, so that the heat dissipation effect of the cold end radiator 3 is concentrated on the upper surface of the semiconductor temperature difference power generation module 4, and the temperature difference between the upper surface and the lower surface of the semiconductor temperature difference power generation module 4 is favorably ensured to be maintained in a working range; a plurality of through holes 9 arranged at equal intervals are formed in the fixing gasket 8, and the semiconductor thermoelectric generation devices 10 arranged at equal intervals are arranged in the corresponding through holes 9.
Further, the fixing pad 8 is made of a heat insulating material; further promoted 8 fixed gasket's thermal-insulated effect, the heat of further avoiding hot junction base 1 is not passed through semiconductor thermoelectric generation module 4 and is directly transmitted for cold junction radiator 3, further makes the radiating effect of cold junction radiator 3 concentrate on the upper surface of semiconductor thermoelectric generation module 4.
Example 2
On the basis of embodiment 1, the voltage boost module 5 may be directly connected to a pipe network leakage sensor (not shown in the figure) and provide working electric energy for the pipe network leakage sensor, where the pipe network leakage sensor includes a temperature sensor, a pressure transmitter, and the like.
In the description herein, reference to the description of the terms "one embodiment/mode," "some embodiments/modes," "example," "specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment/mode or example is included in at least one embodiment/mode or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to be the same embodiment/mode or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments/modes or examples. Furthermore, the various embodiments/aspects or examples and features of the various embodiments/aspects or examples described in this specification can be combined and combined by one skilled in the art without conflicting therewith.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
It will be understood by those skilled in the art that the foregoing embodiments are merely for clarity of illustration of the disclosure and are not intended to limit the scope of the disclosure. Other variations or modifications may occur to those skilled in the art, based on the foregoing disclosure, and are still within the scope of the present disclosure.
Claims (8)
1. The utility model provides a semiconductor temperature difference power generation facility based on heat supply hot water pipe network which characterized in that: including hot junction base (1), hot junction base (1) fixed mounting be in on hot-water line (2), hot junction base (1) upper portion fixed mounting has cold junction radiator (3), hot junction base (1) with semiconductor thermoelectric generation module (4) are equipped with to the clamp between cold junction radiator (3), the semiconductor accomplish the power generation module lower surface with hot junction base (1) contact, upper surface with cold junction radiator (3) contact, semiconductor thermoelectric generation module (4) connect voltage boost module (5) through positive negative pole lead-out wire, voltage boost module (5) are connected with battery module (6), battery module (6) can store the electric energy that semiconductor thermoelectric generation module (4) produced.
2. The semiconductor thermoelectric power generation device based on the heating hot water pipe network according to claim 1, wherein: still include radiator fan (7), radiator fan (7) fixed mounting be in voltage boost module (5) upper portion, and with voltage boost module (5) are connected, voltage boost module (5) can be for radiator fan (7) provide working electric energy, radiator fan (7) air outlet is aimed at cold junction radiator (3).
3. The semiconductor thermoelectric power generation device based on the heating hot water pipe network according to claim 2, wherein: the storage battery module (6) is connected with the cooling fan (7), and the storage battery module (6) can provide working electric energy for the cooling fan (7).
4. The semiconductor thermoelectric power generation device based on the heating hot water pipe network according to claim 3, wherein: the storage battery module (6) is a detachable portable storage battery.
5. The semiconductor thermoelectric power generation device based on the heating hot water pipe network according to claim 1, wherein: and the voltage boosting module (5) is connected with a pipe network leakage sensor and provides working electric energy for the pipe network leakage sensor.
6. The semiconductor thermoelectric power generation device based on the heating hot water pipe network according to any one of claims 1 to 5, wherein: the lower part of the hot end base (1) is an arc-shaped substrate, the upper part of the hot end base is a horizontal base platform, the arc-shaped substrate is used for being attached to the surface of the hot water pipe (2) for installation, and the horizontal base platform is used for installing the cold end radiator (3) and the semiconductor thermoelectric generation module (4).
7. The semiconductor thermoelectric power generation device based on the heating hot water pipe network according to claim 6, wherein: the semiconductor thermoelectric power generation device is characterized in that a fixing gasket (8) is clamped between the hot end base (1) and the cold end radiator (3), a through hole (9) is formed in the fixing gasket (8), and the semiconductor thermoelectric power generation module (4) is installed in the through hole (9) and is matched with the semiconductor thermoelectric power generation module.
8. The semiconductor thermoelectric power generation device based on the heating hot water pipe network according to claim 7, wherein: the fixing pad (8) is made of heat insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023342351.0U CN213937771U (en) | 2020-12-31 | 2020-12-31 | Semiconductor temperature difference power generation device based on heat supply hot water pipe network |
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| CN202023342351.0U CN213937771U (en) | 2020-12-31 | 2020-12-31 | Semiconductor temperature difference power generation device based on heat supply hot water pipe network |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114401458A (en) * | 2021-12-29 | 2022-04-26 | 无锡混沌能源技术有限公司 | Pipeline data remote transmission device based on thermoelectric generation technology |
| CN115507243A (en) * | 2022-10-12 | 2022-12-23 | 南京晨光东螺波纹管有限公司 | Online displacement corrugated pipe compensator applied to high-temperature occasions |
-
2020
- 2020-12-31 CN CN202023342351.0U patent/CN213937771U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114401458A (en) * | 2021-12-29 | 2022-04-26 | 无锡混沌能源技术有限公司 | Pipeline data remote transmission device based on thermoelectric generation technology |
| CN115507243A (en) * | 2022-10-12 | 2022-12-23 | 南京晨光东螺波纹管有限公司 | Online displacement corrugated pipe compensator applied to high-temperature occasions |
| CN115507243B (en) * | 2022-10-12 | 2023-08-18 | 南京晨光东螺波纹管有限公司 | Online displacement corrugated pipe compensator applied to high-temperature occasion |
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Address after: 511400 no.6-2 Kebao Industrial Park, Futian street, Wenkeng Road, Shiji Town, Panyu District, Guangzhou City, Guangdong Province Patentee after: Guangzhou Pukai Thermal Micro Energy Technology Co.,Ltd. Address before: 511400 no.6-2 Kebao Industrial Park, Futian street, Wenkeng Road, Shiji Town, Panyu District, Guangzhou City, Guangdong Province Patentee before: GUANGZHOU PUKAI ENVIRONMENTAL PROTECTION SCIENCE & TECHNOLOGY Co.,Ltd. |
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Address after: Room 406, Development Building, Energy Conservation Science Park, No. 555, Panyu Avenue, Donghuan Street, Panyu District, Guangzhou, Guangdong 511400 Patentee after: Guangzhou Pukai Thermal Micro Energy Technology Co.,Ltd. Address before: 511400 no.6-2 Kebao Industrial Park, Futian street, Wenkeng Road, Shiji Town, Panyu District, Guangzhou City, Guangdong Province Patentee before: Guangzhou Pukai Thermal Micro Energy Technology Co.,Ltd. |
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