CN213936485U - Waveguide microstrip transition structure, terahertz module and communication device - Google Patents
Waveguide microstrip transition structure, terahertz module and communication device Download PDFInfo
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- CN213936485U CN213936485U CN202022714736.9U CN202022714736U CN213936485U CN 213936485 U CN213936485 U CN 213936485U CN 202022714736 U CN202022714736 U CN 202022714736U CN 213936485 U CN213936485 U CN 213936485U
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Abstract
The utility model relates to a microelectronics technical field provides a waveguide microstrip transition structure, terahertz module and communication device now, and waveguide microstrip transition structure includes: the coupling probe, the first microstrip line, the second microstrip line and the T-shaped junction; the first end of the coupling probe is used for extending into the waveguide through an opening arranged on the waveguide, and the second end of the coupling probe is connected with the first end of the first microstrip line; a first end of the T-shaped junction is connected with a second end of the first microstrip line through a second microstrip line, and the second end of the T-shaped junction is used for being connected with the terahertz chip through a gold bonding wire; the impedance of the first microstrip line is greater than that of the second microstrip line. The utility model discloses utilize the equivalent inductance and the electric capacity of T type knot self to offset with the parasitic inductance of bonding gold wire, reduced the impedance mismatch problem that the bonding gold wire brought, transition performance is good, has improved terahertz signal's transmission quality now.
Description
Technical Field
The utility model belongs to the technical field of the microelectronics, especially, relate to a waveguide microstrip transition structure, terahertz module and communication device now.
Background
With the development of modern wireless communication technology, terahertz waves are widely applied to the field of wireless communication by virtue of the characteristics of high frequency, wide bandwidth, good safety and the like. The interface of the terahertz monolithic integrated circuit chip is generally a microstrip transmission line, and the terahertz monolithic integrated circuit chip is generally packaged and then used for facilitating use and testing of users, and the packaged interface is generally a rectangular waveguide. Therefore, a rectangular waveguide microstrip transition structure is needed to realize the transmission transition of signals from the terahertz monolithic integrated circuit chip port to the rectangular waveguide.
In the prior art, the waveguide-probe-microstrip line transition structure is a commonly used packaging transition structure at present, and has the characteristics of low insertion loss, standing wave, convenience in processing and the like. However, since the microstrip transmission line is connected with the chip pressure point by the gold bonding wire, parasitic inductance of the gold bonding wire in the terahertz frequency band can cause adverse effects on matching, standing wave is deteriorated, and transmission quality of terahertz signals is affected.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the utility model provides a waveguide microstrip transition structure, terahertz module and communication device to solve among the prior art parasitic inductance of key alloy silk and cause harmful effects to the matching, lead to the standing wave to worsen, influence terahertz signal transmission quality's problem.
The embodiment of the utility model provides a first aspect provides a waveguide microstrip transition structure, include: the coupling probe, the first microstrip line, the second microstrip line and the T-shaped junction;
the first end of the coupling probe is used for extending into the waveguide through an opening arranged on the waveguide, and the second end of the coupling probe is connected with the first end of the first microstrip line;
a first end of the T-shaped junction is connected with a second end of the first microstrip line through a second microstrip line, and the second end of the T-shaped junction is used for being connected with the terahertz chip through a gold bonding wire;
the impedance of the first microstrip line is greater than that of the second microstrip line.
Optionally, the length and width of each segment of wire in the T-shaped junction are adjustable.
Optionally, the second microstrip line is a 50 ohm microstrip line.
Optionally, the waveguide microstrip transition structure further includes: a substrate;
the coupling probe, the first microstrip line, the second microstrip line and the T-shaped junction are all arranged on the substrate.
Optionally, the substrate is formed from quartz.
Optionally, the operating frequency of the waveguide microstrip transition structure is 200GHz to 250 GHz.
The embodiment of the utility model provides a second aspect provides a terahertz module now, include: waveguide, terahertz chip reach the waveguide microstrip transition structure that the embodiment of the utility model provides a first aspect;
one end of the waveguide microstrip transition structure, which is provided with the coupling probe, extends into the waveguide through an opening formed in the waveguide, and one end of the waveguide microstrip transition structure, which is provided with the T-shaped junction, is connected with the terahertz chip through a gold bonding wire.
Optionally, the distance between the opening provided on the waveguide and the short-circuit surface of the waveguide is a quarter wavelength of the signal.
Optionally, the waveguide is a rectangular waveguide.
The embodiment of the utility model provides a third aspect provides a communication device, include the utility model provides a terahertz module is now provided to the second aspect.
The embodiment of the utility model provides a waveguide microstrip transition structure, include: the coupling probe, the first microstrip line, the second microstrip line and the T-shaped junction; the first end of the coupling probe is used for extending into the waveguide through an opening arranged on the waveguide, and the second end of the coupling probe is connected with the first end of the first microstrip line; a first end of the T-shaped junction is connected with a second end of the first microstrip line through a second microstrip line, and the second end of the T-shaped junction is used for being connected with the terahertz chip through a gold bonding wire; the impedance of the first microstrip line is greater than that of the second microstrip line. The embodiment of the utility model provides an utilize equivalent inductance and electric capacity of T type knot self to offset with the parasitic inductance of bonding gold wire, reduced the impedance mismatch problem that the bonding gold wire brought, transition performance is good, has improved terahertz signal's transmission quality.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the embodiments or the prior art descriptions will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive labor.
Fig. 1 is a schematic diagram of a waveguide microstrip transition structure provided by an embodiment of the present invention;
fig. 2 is a smith chart corresponding to the waveguide microstrip transition structure provided by the embodiment of the present invention;
fig. 3 is an input/output standing wave curve diagram corresponding to the waveguide microstrip transition structure provided by the embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Referring to fig. 1, an embodiment of the present invention provides a waveguide microstrip transition structure, including: the device comprises a coupling probe 1, a first microstrip line 2, a second microstrip line 3 and a T-shaped junction 4;
a first end of the coupling probe 1 extends into the waveguide 7 through an opening arranged on the waveguide 7, and a second end of the coupling probe is connected with a first end of the first microstrip line 2;
a first end of the T-shaped junction 4 is connected with a second end of the first microstrip line 2 through the second microstrip line 3, and a second end of the T-shaped junction is used for being connected with the terahertz chip 5 through a gold bonding wire 6;
the impedance of the first microstrip line 2 is greater than the impedance of the second microstrip line 3.
The embodiment of the utility model provides a realize signal coupling through coupling probe 1, first microstrip line 2 is connected with second microstrip line 3 through the cavity of 7 openings parts of waveguide, realizes coupling probe 1 to second microstrip line 3's impedance match, then is connected to terahertz chip 5 through T type knot 4. The terahertz chip 5 is connected with the T-shaped junction 4 through a gold bonding wire 6. In order to avoid impedance mismatch, if the T-junction 4 is not provided, the arc length and the arc height of the gold bonding wire 6 need to be strictly controlled, which cannot be met by the existing process. The embodiment of the utility model provides an in one side with terahertz chip 5 cascade set up T type knot 4, utilize T type knot 4 self equivalent inductance and parasitic inductance phase-match such as electric capacity with bonding gold wire 6, through length and the width of optimizing 4 sections lines of T type knot, make bonding gold wire 6's parasitic inductance and T type knot 4's reactance offset each other, eliminate the impedance mismatch problem because of bonding gold wire 6 arouses, transitional behavior has been optimized, terahertz signal's transmission quality has been improved
In some embodiments, the length and width of each line segment in the T-junction 4 are adjustable.
The reactance of the T-shaped junction 4 is adjusted by adjusting the length and the width of each section of wire in the T-shaped junction 4 so as to be matched with the gold bonding wire 6.
In some embodiments, the second microstrip line 3 may be a 50 ohm microstrip line.
The first microstrip line 2 may be a high resistance line.
In some embodiments, the waveguide microstrip transition structure may further include: a substrate;
the coupling probe 1, the first microstrip line 2, the second microstrip line 3 and the T-shaped junction 4 are all arranged on the substrate.
In some embodiments, the substrate may be formed from quartz.
The quartz material has small dielectric loss and is beneficial to signal transmission. Wherein, the metal routing gold plating on the surface of the substrate is realized.
In some embodiments, the waveguide microstrip transition structure may have an operating frequency of 200GHz to 250 GHz.
The waveguide microstrip transition structure is used for, but not limited to, the above-mentioned operating frequencies.
For example, the terahertz chip 5 has a 50 Ω load, and the gold bonding wire 6 is equivalent to a lumped inductor, and the inductance value is related to the length of the gold bonding wire 6 and is generally less than 1 nF.
The size of the segments of the line in the T-junction 4 can be determined by impedance matching smith charts. As can be seen from fig. 2, the input impedance Z from gold bonding wire 6 to the chip inputin50+ j 2 pi fL; wherein f is the working frequency, and L is the equivalent inductance value; first, impedance is matched to a real number Z through a low resistance line at one endL1Then using the line impedance
The quarter wave line of (a) matches the load to the 50 omega terminal. In practical application, because other parasitic parameters exist in the terahertz frequency band bonding gold wire 6, the T-shaped junction 4 cannot be simply equivalent to two high-low impedance lines, and the influence of other parasitic parameters still exists, the calculation method is not accurate enough, and only the initial size of subsequent simulation optimization can be provided, but an optimal matching result is not obtained.
Further, considering the influence of other parasitic parameters in the gold bonding wire 6, an electromagnetic field simulation tool based on a Finite Element numerical analysis (FEM) method may be adopted to establish an initial three-dimensional physical model of the transition structure, and the initial size of the model is calculated by an ideal matching mode of a T-junction on the smith artwork. Then setting actual boundary conditions, determining the electromagnetic field distribution condition of the model in the whole area through port excitation, calculating to obtain the microwave S parameter which is wanted by people, and then adjusting key parameters of the model for influencing the transition performance, specifically optimizing the size of each section line in the probe and the T-shaped junction 4, thereby obtaining the optimal transition performance. Referring to fig. 3, with the waveguide microstrip transition structure provided by the embodiment of the present invention, the standing wave of the input/output echo in the frequency range of 200-plus-250 GHz is smaller than 1.75, the input/output echo in the partial frequency range is smaller than 1.5, and the transition performance is good.
Corresponding to any kind of above-mentioned waveguide microstrip transition structure, the embodiment of the utility model provides a terahertz module is still provided, this terahertz module includes: the waveguide 7, the terahertz chip 5 and the waveguide microstrip transition structure provided in the above embodiment;
one end of the waveguide microstrip transition structure, which is provided with the coupling probe 1, extends into the waveguide 7 through an opening formed in the waveguide 7, and one end of the waveguide microstrip transition structure, which is provided with the T-shaped junction 4, is connected with the terahertz chip 5 through the gold bonding wire 6.
In some embodiments, the opening provided in the waveguide 7 may be spaced from the short-circuited surface of the waveguide 7 by a quarter wavelength of the center frequency of the signal.
The distance from the short-circuited side of the waveguide 7 is such that the electric field of the waveguide 7 is the strongest at a quarter wavelength of the signal, and the opening is arranged at this position, so that the signal can be converted from the TE10 mode of the waveguide 7 to the microstrip TEM mode to the maximum extent by spatial coupling.
In some embodiments, the waveguide 7 may be a rectangular waveguide.
The embodiment of the utility model provides a still provide a communication device, including the terahertz module that above-mentioned embodiment provided, and have the advantage that above-mentioned terahertz module had, no longer give unnecessary details here.
The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A waveguide microstrip transition structure comprising: the coupling probe, the first microstrip line, the second microstrip line and the T-shaped junction;
the first end of the coupling probe is used for extending into the waveguide through an opening arranged on the waveguide, and the second end of the coupling probe is connected with the first end of the first microstrip line;
a first end of the T-shaped junction is connected with a second end of the first microstrip line through the second microstrip line, and a second end of the T-shaped junction is connected with the terahertz chip through a gold bonding wire;
the impedance of the first microstrip line is greater than the impedance of the second microstrip line.
2. The waveguide microstrip transition structure of claim 1 wherein the length and width of each section of line in the T-junction are adjustable.
3. The waveguide microstrip transition structure of claim 1 wherein the second microstrip line is a 50 ohm microstrip line.
4. The waveguide microstrip transition structure of claim 1 further comprising: a substrate;
the coupling probe, the first microstrip line, the second microstrip line and the T-shaped junction are all arranged on the substrate.
5. The waveguide microstrip transition structure of claim 4 wherein the substrate is formed from quartz.
6. The waveguide microstrip transition structure of any one of claims 1 to 5 wherein the waveguide microstrip transition structure has an operating frequency of 200GHz to 250 GHz.
7. The utility model provides a terahertz module, its characterized in that includes: a waveguide, a terahertz chip and the waveguide microstrip transition structure according to any one of claims 1 to 6;
one end, provided with a coupling probe, of the waveguide microstrip transition structure extends into the waveguide through an opening formed in the waveguide, and one end, provided with a T-shaped junction, of the waveguide microstrip transition structure is connected with the terahertz chip through a gold bonding wire.
8. The terahertz module of claim 7, wherein the opening provided in the waveguide is spaced from the short-circuited face of the waveguide by a quarter wavelength of a signal.
9. The terahertz module of claim 7, wherein the waveguide is a rectangular waveguide.
10. A communication device comprising the terahertz module as claimed in any one of claims 7 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022714736.9U CN213936485U (en) | 2020-11-20 | 2020-11-20 | Waveguide microstrip transition structure, terahertz module and communication device |
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| CN202022714736.9U CN213936485U (en) | 2020-11-20 | 2020-11-20 | Waveguide microstrip transition structure, terahertz module and communication device |
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| CN213936485U true CN213936485U (en) | 2021-08-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114785300A (en) * | 2022-06-22 | 2022-07-22 | 成都浩翼创想科技有限公司 | 220GHZ power amplifier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114785300A (en) * | 2022-06-22 | 2022-07-22 | 成都浩翼创想科技有限公司 | 220GHZ power amplifier |
| CN114785300B (en) * | 2022-06-22 | 2022-11-15 | 成都浩翼创想科技有限公司 | 220GHZ power amplifier |
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