CN213845234U - High-temperature liquid medicine cleaning equipment for wafer - Google Patents
High-temperature liquid medicine cleaning equipment for wafer Download PDFInfo
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- CN213845234U CN213845234U CN202022977996.5U CN202022977996U CN213845234U CN 213845234 U CN213845234 U CN 213845234U CN 202022977996 U CN202022977996 U CN 202022977996U CN 213845234 U CN213845234 U CN 213845234U
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Abstract
The utility model relates to a high-temperature liquid medicine cleaning device for wafers, which comprises a cleaning chamber, wherein a cavity is arranged in the cleaning chamber, and a bearing platform is rotatably arranged in the cavity; the plurality of chuck pins are arranged on the bearing table and used for clamping the wafer; the positioning disc is arranged on the bearing table and is positioned below the wafer; the lower heating plate is rotatably arranged in the positioning disc, is arranged between the positioning disc and the wafer in a lifting way, and is provided with a liquid inlet and a liquid outlet; the first nozzle and the second nozzle can be arranged below the lower heating plate in a vertically moving mode, and when the lower heating plate rotates, the liquid inlet is communicated with the first nozzle or the second nozzle; the top of wafer is located to a plurality of third nozzles, the utility model discloses a high temperature liquid medicine cleaning equipment for wafer can satisfy liquid medicines such as abluent ozone of wafer and fluorine acid under normal atmospheric temperature state, also can satisfy needs such as phosphoric acid and sulphuric acid just can be better under the high temperature state with the demand that particles such as SiN on the wafer got rid of.
Description
Technical Field
The utility model belongs to the technical field of the wafer washing, especially, relate to a high temperature liquid medicine cleaning equipment for wafer.
Background
Cleaning of a wafer is a very important step in the production process of a semiconductor device, and whether the cleaning is clean directly affects the performance and yield of the device, so that the wafer needs to be cleaned for many times in the preparation process of the semiconductor device. In the conventional semiconductor manufacturing process, a planarization process is generally performed by using a Chemical Mechanical Polishing (CMP) method, however, a lot of residues (residues) are generated during the CMP process, thereby forming defects (defects), so that the wafer (wafer) needs to be cleaned after the CMP process to reduce the defects.
At present, the variety of particles remained on the wafer is various, some particles can be cleaned only by using a normal-temperature liquid medicine and a nozzle to perform corresponding cleaning, but for some particles which are difficult to remove, such as SiN, the particles can be removed only by phosphoric acid, sulfuric acid and the like in a high-temperature state, but cleaning equipment for high-temperature cleaning, such as sulfuric acid, phosphoric acid and the like, does not exist at present.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the purpose is in order to overcome prior art not enough and provide one kind and both can utilize the normal atmospheric temperature liquid medicine to rinse the wafer, also can satisfy the abluent demand of high temperature liquid medicine, has promoted the cleaning efficiency of wafer and the high temperature liquid medicine cleaning equipment for wafer of speed.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a high-temperature chemical cleaning device for wafers comprises:
a cleaning chamber having a placing space therein;
the cavity is arranged in the placing space, and an accommodating space is formed in the cavity;
the bearing table is rotatably arranged in the accommodating space;
the chuck pins are arranged on the bearing table and used for clamping a wafer;
the positioning disc is arranged on the bearing table and is positioned below the wafer;
the lower heating plate is rotatably arranged in the positioning disc and is arranged between the positioning disc and the wafer in a lifting manner, and a liquid inlet and a liquid outlet are formed in the lower heating plate;
the first nozzle and the second nozzle can be arranged below the lower heating plate in a vertically moving mode, and when the lower heating plate rotates, the liquid inlet is communicated with the first nozzle or the second nozzle;
and the third nozzles are arranged above the wafer.
Furthermore, a left heating plate and a right heating plate which can move transversely relative to each other are arranged above the wafer, and the left heating plate and the right heating plate can move up and down; and a liquid spraying port is formed in the left heating plate or the right heating plate.
Furthermore, the cleaning chamber is closed, the cleaning chamber exhausts air through exhaust valves on two sides, and an exhaust port communicated with the cavity is formed in one side of each exhaust valve.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
the utility model discloses the high temperature liquid medicine cleaning equipment for wafer of scheme both can satisfy liquid medicines such as abluent ozone of wafer and fluorine acid under normal atmospheric temperature state, also can satisfy needs such as phosphoric acid and sulphuric acid just can be better under the high temperature state with the demand that particles such as SiN on the wafer got rid of, have better practicality and spreading value, accord with the washing demand of enterprise.
Drawings
The technical scheme of the utility model is further explained by combining the attached drawings as follows:
fig. 1 is a schematic structural diagram of a high-temperature chemical cleaning apparatus for a wafer according to an embodiment of the present invention;
FIG. 2 is a plan view of the wafer cleaning apparatus using the high temperature chemical without the cleaning chamber;
fig. 3 is a schematic view illustrating a usage state of the high temperature chemical cleaning apparatus for wafer in step S02 according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a usage status of the high temperature chemical cleaning apparatus for wafer in step S03 according to an embodiment of the present invention;
fig. 5 is a schematic view illustrating a usage state of the high temperature chemical cleaning apparatus for wafer in step S05 according to an embodiment of the present invention;
fig. 6 is a schematic structural view of a high-temperature chemical cleaning apparatus for wafers according to a second embodiment of the present invention;
fig. 7 is a schematic structural diagram of a high-temperature chemical cleaning apparatus for a wafer in step S14 according to a second embodiment of the present invention;
wherein: cleaning chamber 1, cavity 2, plummer 3, chuck pin 4, positioning disk 5, lower hot plate 6, inlet 60, leakage fluid dram 61, first nozzle 7, second nozzle 8, third nozzle 9, wafer 10, gas vent 11, discharge valve 12, left hot plate 13, right hot plate 14, spout liquid mouth 15.
Detailed Description
In order to make the contents of the present invention more clear and understandable, the contents of the present invention are further described below with reference to the drawings attached to the specification, and of course, the present invention is not limited to the specific embodiment, and general alternatives known to those skilled in the art are also included in the scope of the present invention.
Referring to fig. 1-2, a high temperature chemical cleaning apparatus for a wafer according to an embodiment of the present invention includes a cleaning chamber 1, a cavity 2, a susceptor 3, chuck pins 4, a positioning plate 5, a lower heating plate 6, a first nozzle 7, a second nozzle 8, and a third nozzle 9; the cleaning chamber 1 is internally provided with a placing space; the cavity 2 is arranged in the placing space, and an accommodating space is arranged in the cavity 2; the bearing table 3 is rotatably arranged in the accommodating space; be equipped with four chuck pins 4 that are used for centre gripping wafer on the plummer 3, the positioning disk 5 is installed on the plummer 3 to the positioning disk 5 is located the below of wafer 10, and it has the through-hole to open at the center department of positioning disk 5, and it has the round draw-in groove to open in the circumference of through-hole.
The lower heating plate 6 is clamped in the clamping groove, and the lower heating plate 6 can rotate in the clamping groove and can move up and down between the positioning disc 5 and the wafer 10; a liquid outlet 61 is formed in the center of the lower heating plate 6, and a liquid inlet 60 is formed in one side of the liquid outlet 61; in addition, the lower heating plate 6 is made of quartz, and the lower heating plate 6 can automatically heat and raise the temperature.
The first nozzle 7 and the second nozzle 8 can be arranged below the lower heating plate 6 in a vertically movable manner, so that when the lower heating plate 6 rotates to a certain position, the first nozzle 7 corresponds to the liquid inlet 60 up and down, then the first nozzle 7 moves upwards to the liquid inlet 61, sprays corresponding liquid medicine to the lower surface of the wafer, cleans the lower surface of the wafer, and then discharges the liquid medicine through the liquid outlet; the first nozzle 7 is mainly used for spraying acidic chemical solutions such as hydrofluoric acid and phosphoric acid.
Similarly, when the lower heating plate 6 rotates to a certain position, the second nozzle 8 corresponds to the liquid inlet 60 up and down, then the second nozzle 8 moves up into the liquid inlet, sprays the corresponding liquid medicine onto the lower surface of the wafer, cleans the lower surface of the wafer, and discharges the liquid medicine through the liquid outlet; among them, the second nozzle 8 may spray APM, DIW, nitrogen, and the like.
In addition, the cleaning chamber 1 is closed, in order to facilitate the exhaust in a high temperature state, the exhaust valves 12 are arranged on the two sides of the cleaning chamber 1, the exhaust is performed through the exhaust valves 12, and the exhaust port 11 is arranged on the side close to the exhaust valve 12, so that the circulation path of the gas is shortened, the flow of the air is further accelerated, and the high temperature heating of the liquid medicine is facilitated.
In this embodiment, the temperature of the medical solution may be raised to between 100-130 deg..
The embodiment discloses a wafer cleaning process for cleaning a wafer by using high-temperature liquid medicine cleaning equipment for the wafer, which comprises the following steps:
s01: after being fixed by the chuck pins, the wafer rotates through the susceptor, and the lower heating plate also rotates by a certain angle, so that the liquid inlet corresponds to the first nozzle up and down, please refer to fig. 1.
S02: the first nozzle moves up to the inlet and the two third nozzles spray DHF and DIW onto the top surface of the wafer for cleaning, as shown in fig. 3.
S03: the lower heating plate and the first nozzle are synchronously lifted to enable the lower heating plate to be close to the wafer, the lower heating plate is heated to raise the temperature, then the first nozzle is utilized to spray the phosphoric acid to the lower surface of the wafer, and the temperature of the phosphoric acid is also raised due to the high temperature of the lower heating plate; meanwhile, the third nozzle sprays DIW to the upper surface of the wafer for cleaning, please refer to FIG. 4.
S04: the third nozzle sprays phosphoric acid to the upper surface of the wafer for cleaning.
S05: the first nozzle returns to the initial position, and the heating plate is rotated to a certain position while descending, so that the liquid inlet and the second nozzle are at the corresponding positions up and down, please refer to fig. 5.
S06: the second nozzle rises to the liquid inlet, and sequentially sprays APM, DIW and nitrogen to the lower surface of the wafer for cleaning and spin-drying; meanwhile, the upper surface of the wafer is firstly sprayed with DIW by the third nozzle for washing and then is cleaned by atomized APM.
S07: and blowing nitrogen to dry the upper surface of the wafer.
Referring to fig. 5-6, the present invention further discloses another high temperature chemical cleaning apparatus for wafer, which is different from the above embodiments in that: a left heating plate 13 and a right heating plate 14 which can move transversely relative to each other are also arranged above the wafer, and the left heating plate 13 and the right heating plate 14 can move up and down; a liquid spraying port 15 is formed in the left heating plate 13 or the right heating plate 14, and the liquid spraying port 15 is formed in the left heating plate 13 in this embodiment; constitute between left hot plate 13 and the right hot plate 14 and enough had been enough to the subassembly of the upper surface part heating of wafer, can guarantee like this that the temperature after the liquid medicine intensifies is higher to can realize better cleaning performance.
The temperature of the liquid medicine in the embodiment can be increased to 150-200 degrees.
The cleaning process of the high-temperature chemical cleaning equipment for the wafer in the embodiment comprises the following steps:
s11: the wafer is fixed by the chuck pin and then rotates by the bearing table, and the lower heating plate also rotates by a certain angle, so that the liquid inlet corresponds to the first nozzle up and down.
S12: the first nozzle moves upwards to the liquid inlet, and the two third nozzles respectively spray DHF and DIW to the upper surface of the wafer to be cleaned.
S13: the lower heating plate and the first nozzle synchronously ascend to enable the lower heating plate to be close to the wafer; and heating the lower heating plate to raise the temperature, spraying phosphoric acid to the lower surface of the wafer by using the first nozzle, and spraying DIW to the upper surface of the wafer by using the third nozzle for cleaning.
S14: left heating plate and right heating plate heat up after being close to each other, cover the upper surface of wafer, then the third nozzle washs phosphoric acid through the upper surface that the hydrojet mouth sprays the wafer, because about the heating by lower heating plate, left heating plate and right heating plate, can keep the temperature of sulphuric acid at higher temperature to cleaning efficiency has been promoted.
S15: the left heating plate, the right heating plate and the first nozzle return to the initial position, and the heating plate descends and rotates a certain position at the same time, so that the liquid inlet and the second nozzle are vertically corresponding to each other.
S16: the second nozzle rises to the liquid inlet, and sequentially sprays APM, DIW and nitrogen to the lower surface of the wafer for cleaning and spin-drying; meanwhile, the upper surface of the wafer is firstly sprayed with DIW by the third nozzle for washing and then is cleaned by atomized APM.
S17: the wafer is rotated to be dried, and nitrogen is introduced for drying.
To sum up, the utility model discloses a high temperature liquid medicine cleaning equipment for wafer both can satisfy liquid medicine such as abluent ozone of wafer and fluorine acid under normal atmospheric temperature state, also can satisfy needs such as phosphoric acid and sulphuric acid just can be better under the high temperature state with the demand that the granule such as SiN on the wafer got rid of, has better practicality and spreading value, accords with the washing demand of enterprise.
The above is only a specific application example of the present invention, and does not constitute any limitation to the protection scope of the present invention. All the technical solutions formed by equivalent transformation or equivalent replacement fall within the protection scope of the present invention.
Claims (4)
1. A high-temperature liquid medicine cleaning equipment for wafers is characterized by comprising:
a cleaning chamber having a placing space therein;
the cavity is arranged in the placing space, and an accommodating space is formed in the cavity;
the bearing table is rotatably arranged in the accommodating space;
the chuck pins are arranged on the bearing table and used for clamping a wafer;
the positioning disc is arranged on the bearing table and is positioned below the wafer;
the lower heating plate is rotatably arranged in the positioning disc and is arranged between the positioning disc and the wafer in a lifting manner, and a liquid inlet and a liquid outlet are formed in the lower heating plate;
the first nozzle and the second nozzle can be arranged below the lower heating plate in a vertically moving mode, and when the lower heating plate rotates, the liquid inlet is communicated with the first nozzle or the second nozzle;
and the third nozzles are arranged above the wafer.
2. The high-temperature chemical cleaning equipment for the wafer as claimed in claim 1, wherein: the upper part of the wafer is also provided with a left heating plate and a right heating plate which can move transversely relative to each other, and the left heating plate and the right heating plate can move up and down; and a liquid spraying port is formed in the left heating plate or the right heating plate.
3. The high-temperature chemical cleaning equipment for the wafer as claimed in claim 1, wherein: the cleaning chamber is closed, the cleaning chamber exhausts through exhaust valves on two sides, and an exhaust port communicated with the cavity is formed in one side of each exhaust valve.
4. The apparatus for cleaning a wafer using a high temperature chemical according to claim 1, wherein: the material of lower hot plate, left hot plate and right hot plate is quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022977996.5U CN213845234U (en) | 2020-12-09 | 2020-12-09 | High-temperature liquid medicine cleaning equipment for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022977996.5U CN213845234U (en) | 2020-12-09 | 2020-12-09 | High-temperature liquid medicine cleaning equipment for wafer |
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| CN213845234U true CN213845234U (en) | 2021-07-30 |
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| CN202022977996.5U Active CN213845234U (en) | 2020-12-09 | 2020-12-09 | High-temperature liquid medicine cleaning equipment for wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112614794A (en) * | 2020-12-09 | 2021-04-06 | 若名芯半导体科技(苏州)有限公司 | High-temperature liquid medicine cleaning equipment for wafer and cleaning process thereof |
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- 2020-12-09 CN CN202022977996.5U patent/CN213845234U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112614794A (en) * | 2020-12-09 | 2021-04-06 | 若名芯半导体科技(苏州)有限公司 | High-temperature liquid medicine cleaning equipment for wafer and cleaning process thereof |
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