CN213752677U - Field-effect transistor of pin protective housing integral type - Google Patents
Field-effect transistor of pin protective housing integral type Download PDFInfo
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- CN213752677U CN213752677U CN202022765546.XU CN202022765546U CN213752677U CN 213752677 U CN213752677 U CN 213752677U CN 202022765546 U CN202022765546 U CN 202022765546U CN 213752677 U CN213752677 U CN 213752677U
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Abstract
The utility model discloses a field effect transistor of pin protective housing integral type relates to the semiconductor technology field, this field effect transistor of pin protective housing integral type, including the field effect transistor body, the first shell fragment of the equal fixedly connected with in left side and the right side of field effect transistor body, the first stopper of the equal fixedly connected with in left side and the right side of field effect transistor body, two first stopper is located the below of two first shell fragments respectively, the protective sheath has been cup jointed in the surface activity of field effect transistor body. The utility model discloses a set up field effect transistor body, first shell fragment, first stopper, protective sheath and second stopper, solved traditional field effect transistor because the pin does not obtain effectual protection, can lead to the pin to cause the harm, people often live pin parcel with the protection film, because the pin is less, inconvenient parcel is easy to break the pin moreover, influences pin life, is touched by the mistake after the pin welding of field effect transistor body and is bumped the problem that causes the short circuit.
Description
Technical Field
The utility model relates to the field of semiconductor technology, specifically be a field effect transistor of pin protective housing integral type.
Background
The field effect transistor is a semiconductor device for controlling the current of an output loop by controlling the electric field effect of an input circuit, has the advantages of high input resistance, low noise, low power consumption and the like, is composed of various semiconductors, and is most common at present.
Traditional field effect transistor can lead to the pin to cause the harm because the pin does not obtain effectual protection, and people often live pin parcel with the protection film, because the pin is less, inconvenient parcel, easy with the pin rupture moreover, influence pin life, receive the damage after the pin welding of field effect transistor body and can cause the short circuit.
SUMMERY OF THE UTILITY MODEL
The utility model provides a field effect transistor of pin protective housing integral type, possess and effectively avoid the pin to be broken through simple method, improve the life of pin, the pin that prevents the field effect transistor body receives the damage after welding and causes the advantage of short circuit, because the pin does not obtain effectual protection with solving traditional field effect transistor, can lead to the pin to cause the harm, people often live with pin parcel with the protection film, because the pin is less, inconvenient parcel, and break the pin easily, influence pin life, touched the problem that bumps the short circuit of causing by the mistake after the pin welding of field effect transistor body.
Effectively avoid the pin to be broken through simple method for the realization, improve the life of pin, receive the purpose that the damage caused the short circuit after preventing the pin welding of field effect transistor body, the utility model provides a following technical scheme: a field effect transistor with an integrated pin protection shell comprises a field effect transistor body, wherein the left side and the right side of the field effect transistor body are fixedly connected with first elastic sheets, the left side and the right side of the field effect transistor body are fixedly connected with first limiting blocks, the two first limiting blocks are respectively positioned below the two first elastic sheets, a protective sleeve is movably sleeved on the surface of the field effect transistor body and is positioned below the first elastic sheets, the upper surface of each first limiting block is movably connected with the top of the inner wall of the protective sleeve, the left side and the right side of the inner wall of the protective sleeve are respectively provided with a sliding groove, the inner walls of the two sliding grooves are respectively connected with the surfaces of two sliding blocks in a sliding manner, the inner wall of the protective sleeve is movably connected with the surface of a square box, the opposite surfaces of the two sliding blocks are fixedly connected with the side surface of the square box, and the left side and the right side of the inner wall of the square box are respectively fixedly connected with a fixing plate, the opposite surfaces of the two fixing plates are respectively provided with a first clamping groove, the lower surface of the square box is respectively provided with two elongated grooves, the tops of the inner walls of the two elongated grooves are respectively provided with two limiting grooves, the inner walls of the two limiting grooves are fixedly connected with second elastic pieces, the inner walls of the two limiting grooves are respectively movably connected with the surfaces of two second limiting blocks, the opposite surfaces of the two second limiting blocks are respectively provided with a second clamping groove, the lower surfaces of the two second limiting blocks are respectively fixedly connected with a first elongated plate, the side surfaces of the two first elongated plates are respectively in sliding connection with the inner walls of the two elongated grooves, the surfaces of the two first elongated plates are respectively movably connected with the surfaces of a second elongated plate and a third elongated plate through circular shafts, the right side of the second elongated plate is movably connected with the left side of the third elongated plate, the right side of the second elongated plate is provided with a groove, and the left side of the third elongated plate is provided with an L-shaped groove, the inner wall of the L-shaped groove is movably connected with the surface of the L-shaped rod, and the left end of the L-shaped rod movably penetrates through the L-shaped groove and is movably connected with the inner wall of the groove.
As an optimal technical solution of the present invention, the distance between the upper surface and the upper surface of the second long plate and the third long plate is smaller than the distance between the left side and the right side of the inner wall of the elongated slot.
As a preferred technical scheme of the utility model, first shell fragment and second shell fragment respectively with the inner wall of first draw-in groove and the inner wall shape looks adaptation of second draw-in groove.
As a preferred technical scheme of the utility model, the left side of square box inner wall and the equal fixedly connected with third stopper in right side, two the third stopper all is located the below of fixed plate.
As an optimized technical scheme of the utility model, the distance on the left side and the right side of square box inner wall is greater than the distance on the left side and the right side of field effect transistor body.
Compared with the prior art, the utility model provides a field effect transistor of pin protective housing integral type possesses following beneficial effect:
1. the field effect transistor with the integrated pin protection shell moves the L-shaped rod rightwards by arranging the square box, the first elastic sheet, the first clamping groove, the protection sleeve and the second long plate, so that the L-shaped rod is separated from the groove, the second long plate and the third long plate are manually rotated to enable the second long plate and the third long plate to be in a vertical state with the first long plate, the second long plate and the third long plate are pushed to vertically move upwards, the second long plate and the third long plate drive the first long plate to move upwards, when the second elastic sheet is buckled with the second clamping groove, the first long plate stops moving, the first long plate, the second long plate and the third long plate are positioned in the square box, the square box is slid to the position of the first elastic sheet, the first elastic sheet is buckled with the first elastic sheet until the top of the inner wall of the sliding groove is contacted with the upper surface of the sliding block, the protection sleeve is driven to move upwards, and the protection sleeve is stopped above the square box, the pins of the field effect tube body are exposed through the sliding square box and the first long plate, the pins of the field effect tube body are convenient to connect, meanwhile, the parts, located outside the square box, of the second long plate and the third long plate protect the pins of the field effect tube body after welding, the pins of the field effect tube body are prevented from being short-circuited, the pins of the field effect tube body are exposed through the sliding square box and the first long plate in a simple process, and the pins of the field effect tube body are convenient to connect.
2. The pin-protecting integrated field effect transistor is characterized in that an L-shaped rod, a third long plate, an elongated slot and a first limiting block are arranged, the second long plate and the third long plate are pulled to separate a second elastic sheet from a second clamping slot, the second long plate and the third long plate are pulled to drive the first long plate to move downwards until the bottom of the inner wall of a limiting slot on the first long plate is contacted with the lower surface of the second limiting block, a square box slides to move downwards to separate the first elastic sheet from the first clamping slot, a protective sleeve also moves downwards, the protective sleeve stops moving when the square box moves to the position of the first limiting block, the second long plate and the third long plate are positioned outside the elongated slot, the second long plate and the third long plate are rotated to enable the second long plate and the third long plate to be in a vertical state with the first long plate, the protective cover is formed to protect pins of a field effect transistor body, the L-shaped rod is pushed leftwards until the left end of the L-shaped rod is contacted with the left side of the inner wall of a groove, therefore, the second long plate and the third long plate are fixed, the second long plate and the third long plate are prevented from being separated, the pins of the field effect tube body are prevented from being exposed outside for a long time, the pins of the field effect tube body are prevented from being broken, and the service life of the pins of the field effect tube body is prolonged.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is an enlarged view of the structure A of FIG. 1 according to the present invention;
FIG. 3 is an enlarged view of the structure B in FIG. 1 according to the present invention;
FIG. 4 is an enlarged view of the structure at C in FIG. 1 according to the present invention;
FIG. 5 is an enlarged view of the structure at D in FIG. 1 according to the present invention
Fig. 6 is a top cross-sectional view of the first stopper.
In the figure: 1. a field effect transistor body; 2. a first spring plate; 3. a first stopper; 4. a protective sleeve; 5. a second limiting block; 6. a chute; 7. a slider; 8. a square box; 9. a fixing plate; 10. a first card slot; 11. a long groove; 12. a limiting groove; 13. a second elastic sheet; 14. a second card slot; 15. a first long plate; 16. a second long plate; 17. a third long plate; 18. a groove; 19. an L-shaped slot; 20. an L-shaped rod; 21. and a third limiting block.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-6, the utility model discloses a field effect transistor with an integrated pin protection case, comprising a field effect transistor body 1, wherein the left side and the right side of the field effect transistor body 1 are both fixedly connected with first elastic sheets 2, the left side and the right side of the field effect transistor body 1 are both fixedly connected with first stoppers 3, the two first stoppers 3 are respectively positioned below the two first elastic sheets 2, a protection sleeve 4 is movably sleeved on the surface of the field effect transistor body 1, the protection sleeve 4 is positioned below the first elastic sheets 2, the upper surface of the first stopper 3 is movably connected with the top of the inner wall of the protection sleeve 4, the left side and the right side of the inner wall of the protection sleeve 4 are both provided with chutes 6, the inner walls of the two chutes 6 are respectively connected with the surfaces of two sliders 7 in a sliding manner, the inner wall of the protection sleeve 4 is movably connected with the surface of a square box 8, the opposite surfaces of the two sliding blocks 7 are fixedly connected with the side surface of the square box 8, the left side and the right side of the inner wall of the square box 8 are fixedly connected with fixing plates 9, the opposite surfaces of the two fixing plates 9 are respectively provided with a first clamping groove 10, the lower surface of the square box 8 is respectively provided with two elongated grooves 11, the top parts of the inner walls of the two elongated grooves 11 are respectively provided with two limiting grooves 12, the inner walls of the two limiting grooves 12 are respectively and fixedly connected with a second elastic sheet 13, the inner walls of the two limiting grooves 12 are respectively and movably connected with the surfaces of the two second limiting blocks 5, the opposite surfaces of the two second limiting blocks 5 are respectively provided with a second clamping groove 14, the lower surfaces of the two second limiting blocks 5 are respectively and fixedly connected with a first long plate 15, the side surfaces of the two first long plates 15 are respectively and slidably connected with the inner walls of the two elongated grooves 11, the surfaces of the two first long plates 15 are respectively and movably connected with the surfaces of a second long plate 16 and a third long plate 17 through circular shaft, the right side of the second long plate 16 is movably connected with the left side of the third long plate 17, the right side of the second long plate 16 is provided with a groove 18, the left side of the third long plate 17 is provided with an L-shaped groove 19, the inner wall of the L-shaped groove 19 is movably connected with the surface of an L-shaped rod 20, and the left end of the L-shaped rod 20 movably penetrates through the L-shaped groove 19 and is movably connected with the inner wall of the groove 18.
Specifically, the distance between the upper surfaces of the second long plate 16 and the third long plate 17 is smaller than the distance between the left side and the right side of the inner wall of the long groove 11.
In this embodiment, the second long plate 16 and the third long plate 17 can be retracted into the square box 8 in the process of moving upward, so that the support legs of the fet body 1 are exposed outside the square box 8, and the support legs of the fet body 1 can be connected conveniently.
Specifically, the first elastic piece 2 and the second elastic piece 13 are respectively matched with the inner wall of the first clamping groove 10 and the inner wall of the second clamping groove 14 in shape.
In this embodiment, the first elastic piece 2 and the second elastic piece 13 can be buckled with and separated from the first slot 10 and the second slot 14, respectively.
Specifically, the left side and the equal fixedly connected with third stopper 21 in right side of 8 inner walls of square box, two third stopper 21 all is located the below of fixed plate 9.
In this embodiment, the third stopper 21 can prevent the protective sheath 4 and the square box 8 from breaking away from the top of the field effect transistor body 1, and the two third stoppers 21 are respectively located on the front sides of the two first stoppers 3, so that when the square box 8 is prevented from moving upwards, the first stopper 3 blocks the third stopper 21.
Specifically, the distance between the left side and the right side of the inner wall of the square box 8 is greater than the distance between the left side and the right side of the field effect transistor body 1.
In this embodiment, when the square box 8 is contracted upward, the connection of the pins of the field effect transistor body 1 is not hindered.
The utility model discloses a theory of operation and use flow: when the protective sleeve is used, the L-shaped rod 20 is moved rightwards firstly, the L-shaped rod 20 is separated from the groove 18, the second long plate 16 and the third long plate 17 are rotated manually, the second long plate 16 and the third long plate 17 are both in a vertical state with the first long plate 15, the second long plate 16 and the third long plate 17 are pushed to move vertically upwards, the second long plate 16 and the third long plate 17 drive the first long plate 15 to move upwards, when the second elastic sheet 13 is buckled with the second clamping groove 14, the first long plate 15 stops moving, the first long plate 15, the second long plate 16 and the third long plate 17 are all positioned in the square box 8, the square box 8 slides to the position of the first elastic sheet 2, the first elastic sheet 2 is buckled with the first clamping groove 10 until the top of the inner wall of the sliding groove 6 is contacted with the upper surface of the sliding block 7, the square box 8 drives the protective sleeve 4 to move upwards, and the square box 4 stays above the square box 8, the pins of the field effect tube body 1 are exposed by sliding the square box 8 and the first long plate 15, so that the pins of the field effect tube body 1 are conveniently connected, meanwhile, the pins of the field effect tube body 1 after welding are protected by the parts of the second long plate 16 and the third long plate 17 which are positioned outside the square box 8, the short circuit of the pins of the field effect tube body 1 is prevented, when the support legs of the field effect tube body 1 are not needed, the second long plate 16 and the third long plate 17 are pulled to separate the second elastic sheet 13 from the second clamping groove 14, the second long plate 16 and the third long plate 17 are pulled to drive the first long plate 15 to move downwards until the bottom of the inner wall of the limiting groove 12 on the first long plate 15 is contacted with the lower surface of the second limiting block 5, the square box 8 slides downwards to separate the first elastic sheet 2 from the first clamping groove 10, the protective sleeve 4 also moves downwards, and the protective sleeve 4 stops moving when moving to the first limiting block 3, at the moment, the second long plate 16 and the third long plate 17 are positioned outside the long groove 11, the second long plate 16 and the third long plate 17 are rotated to enable the second long plate 16 and the third long plate 17 to be in a vertical state with the first long plate 15, a protective cover is formed to protect pins of the field effect transistor body 1, the L-shaped rod 20 is pushed leftwards until the left end of the L-shaped rod 20 is contacted with the left side of the inner wall of the groove 18, so that the second long plate 16 and the third long plate 17 are fixed, the second long plate 16 and the third long plate 17 are prevented from being separated, the pins of the field effect transistor body 1 are prevented from being exposed outside for a long time, the pins of the field effect transistor body 1 are prevented from being broken, the service life of the pins of the field effect transistor body 1 is prolonged, and the pins of the field effect transistor body 1 are mistakenly touched and collided after being welded to cause a short circuit problem.
In conclusion, according to the field effect transistor with the integrated pin protection shell, the fixing plate 9, the first clamping groove 10, the long groove 11, the limiting groove 12 and the second elastic sheet 13 are arranged, so that the problem that the pins are damaged due to the fact that the pins of the traditional field effect transistor are not effectively protected is solved, people often wrap the pins with the protective film, the pins are small and inconvenient to wrap, the pins are easily broken, the service life of the pins is influenced, and the short circuit is caused due to the fact that the pins of the field effect transistor body 1 are mistakenly touched and touched after being welded.
It should be noted that, in this document, terms such as "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The utility model provides a field effect transistor of pin protective housing integral type, includes field effect transistor body (1), its characterized in that: the field effect transistor comprises a field effect transistor body (1), wherein the left side and the right side of the field effect transistor body (1) are fixedly connected with first elastic sheets (2), the left side and the right side of the field effect transistor body (1) are fixedly connected with first limiting blocks (3), the two first limiting blocks (3) are respectively positioned below the two first elastic sheets (2), the surface of the field effect transistor body (1) is movably sleeved with a protective sleeve (4), the protective sleeve (4) is positioned below the first elastic sheets (2), the upper surface of each first limiting block (3) is movably connected with the top of the inner wall of the protective sleeve (4), the left side and the right side of the inner wall of the protective sleeve (4) are respectively provided with a sliding groove (6), the inner walls of the two sliding grooves (6) are respectively connected with the surfaces of two sliding blocks (7) in a sliding manner, the inner wall of the protective sleeve (4) is movably connected with the surface of a square box (8), and the opposite surfaces of the two sliding blocks (7) are fixedly connected with the side surface of the square box (8), the left side and the right side of the inner wall of the square box (8) are fixedly connected with fixing plates (9), the opposite surfaces of the two fixing plates (9) are respectively provided with a first clamping groove (10), the lower surface of the square box (8) is respectively provided with two elongated grooves (11), the tops of the inner walls of the two elongated grooves (11) are respectively provided with two limiting grooves (12), the inner walls of the two limiting grooves (12) are respectively and fixedly connected with a second elastic sheet (13), the inner walls of the two limiting grooves (12) are respectively and movably connected with the surfaces of the two second limiting blocks (5), the opposite surfaces of the two second limiting blocks (5) are respectively provided with a second clamping groove (14), the lower surfaces of the two second limiting blocks (5) are respectively and fixedly connected with first elongated plates (15), and the side surfaces of the two first elongated plates (15) are respectively and slidably connected with the inner walls of the two elongated grooves (11), two the surface of first long board (15) all through the circular shaft respectively with the surface swing joint of second long board (16) and third long board (17), the right side of second long board (16) and the left side swing joint of third long board (17), recess (18) are seted up on the right side of second long board (16), L shape groove (19) have been seted up in the left side of third long board (17), the inner wall in L shape groove (19) and the surface swing joint of L shape pole (20), the left end activity of L shape pole (20) run through L shape groove (19) and with the inner wall swing joint of recess (18).
2. The field effect transistor integrated with a pin and a protective case as claimed in claim 1, wherein: the distance between the upper surfaces of the second long plate (16) and the third long plate (17) is smaller than the distance between the left side and the right side of the inner wall of the long groove (11).
3. The field effect transistor integrated with a pin and a protective case as claimed in claim 1, wherein: the first elastic sheet (2) and the second elastic sheet (13) are respectively matched with the inner wall of the first clamping groove (10) and the inner wall of the second clamping groove (14) in shape.
4. The field effect transistor integrated with a pin and a protective case as claimed in claim 1, wherein: the equal fixedly connected with third stopper (21) in left side and the right side of square box (8) inner wall, two third stopper (21) all are located the below of fixed plate (9).
5. The field effect transistor integrated with a pin and a protective case as claimed in claim 1, wherein: the distance between the left side and the right side of the inner wall of the square box (8) is greater than the distance between the left side and the right side of the field effect transistor body (1).
Priority Applications (1)
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CN202022765546.XU CN213752677U (en) | 2020-11-25 | 2020-11-25 | Field-effect transistor of pin protective housing integral type |
Applications Claiming Priority (1)
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CN202022765546.XU CN213752677U (en) | 2020-11-25 | 2020-11-25 | Field-effect transistor of pin protective housing integral type |
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CN213752677U true CN213752677U (en) | 2021-07-20 |
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CN202022765546.XU Active CN213752677U (en) | 2020-11-25 | 2020-11-25 | Field-effect transistor of pin protective housing integral type |
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- 2020-11-25 CN CN202022765546.XU patent/CN213752677U/en active Active
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