CN213750656U - Ultraviolet exposure device for mask exposure - Google Patents
Ultraviolet exposure device for mask exposure Download PDFInfo
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- CN213750656U CN213750656U CN202023144357.7U CN202023144357U CN213750656U CN 213750656 U CN213750656 U CN 213750656U CN 202023144357 U CN202023144357 U CN 202023144357U CN 213750656 U CN213750656 U CN 213750656U
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Abstract
The utility model belongs to the exposure equipment field specifically discloses a lower and higher ultraviolet exposure device for mask exposure of exposure precision of preparation cost. The ultraviolet exposure device for mask exposure mainly comprises an ultraviolet source, an adjustable beam expanding lens, a reflecting mirror, an optical filter and an optical mask plate which are sequentially arranged along an optical path, and has the advantages of simple structure, convenience in operation and lower manufacturing cost; the ultraviolet light source comprises a condenser lens and an ultraviolet lamp, and energy loss can be reduced, the energy density of light beams is improved, and the light energy distribution uniformity is improved through the condenser lens; the adjustable beam expander can realize beam shaping, output parallel beams, improve the distribution uniformity of light energy and improve the exposure precision; the light path can be folded through the reflector, so that the light beam is convenient to apply; the selection of the wavelength of the light beam can be carried out through the optical filter; and then, the mask of the photosensitive glass-ceramic material can be exposed through a photomask plate, and the photomask can be used for evaluation and verification of the base material.
Description
Technical Field
The utility model belongs to the exposure equipment field, concretely relates to mask is ultraviolet exposure device for exposure.
Background
The ultraviolet exposure device is mainly used for mask exposure of photosensitive microcrystalline glass. The photosensitive glass ceramics is a glass material which is subjected to light irradiation with a certain wavelength and is controlled to grow a large number of crystals in an exposure area under the condition of a proper heat treatment process, and the crystals have the characteristic of being easily dissolved in acid. The glass can be used for chemical processing to obtain a high-precision microstructure on a glass substrate by obtaining a clear pattern on the glass substrate by a suitable shielded light irradiation technique.
At present, an ultraviolet lamp is usually adopted in a laboratory to directly irradiate and expose a sample, the distance between the ultraviolet lamp and the sample, the light incidence angle and the like have great influence on the exposure effect, the sample is easily exposed unevenly, the exposure power is unstable and other adverse effects, in addition, the problems of high manufacturing cost, long period, incapability of recycling and the like of a photomask plate exist, and the development and verification of a photosensitive glass-ceramic material are limited. Although commercial mature high-precision photoetching machine equipment is available, the cost of the whole machine is high, and exposure equipment with high precision is not needed in the initial development process of the photosensitive microcrystalline glass material.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to provide a lower and higher ultraviolet exposure device for mask exposure of exposure precision of preparation cost.
The utility model provides a technical scheme that its technical problem adopted is: the mask exposure ultraviolet exposure device comprises an ultraviolet light source, an adjustable beam expander, a reflector, an optical filter and an optical mask plate; at least part of emergent light of the ultraviolet light source irradiates to the light inlet end of the adjustable beam expanding lens, the light outlet end of the adjustable beam expanding lens faces to the light inlet part of the reflector, the light reflecting part of the reflector faces to the light inlet part of the optical filter, and the light outlet part of the optical filter faces to the light inlet part of the optical mask plate.
Further, the ultraviolet light source comprises a condenser and an ultraviolet lamp, and the light emitting part of the ultraviolet lamp is positioned at the focus of the condenser.
Further, the condenser is an elliptical reflector, and the ultraviolet lamp is a mercury arc lamp.
Further, the reflecting mirror is a plane reflecting mirror.
Furthermore, at least two exposure holes with different diameters are formed in the photomask plate.
Further, the diameter of the exposure hole is 0.05-2 mm.
Further, the ultraviolet exposure device for mask exposure further comprises a black body base, and a supporting surface of the black body base corresponds to the light emergent part of the photomask plate.
Further, the ultraviolet exposure device for mask exposure further comprises a lifting objective table, and the black body base is arranged on the lifting objective table.
The utility model has the advantages that: the ultraviolet exposure device for mask exposure mainly comprises an ultraviolet source, an adjustable beam expanding lens, a reflecting mirror, an optical filter and an optical mask plate which are sequentially arranged along an optical path, and has the advantages of simple structure, convenience in operation and lower manufacturing cost; the adjustable beam expander can realize beam shaping, output parallel beams, improve the distribution uniformity of light energy and improve the exposure precision; the light path can be folded through the reflector, so that the light beam is convenient to apply; the selection of the wavelength of the light beam can be carried out through the optical filter; and then, the mask of the photosensitive glass-ceramic material can be exposed through a photomask plate, and the photomask can be used for evaluation and verification of the base material. The ultraviolet light source comprises a condenser lens and an ultraviolet lamp, and energy loss can be reduced, the energy density of light beams is improved, and the distribution uniformity of light energy is improved through the condenser lens.
Drawings
FIG. 1 is a schematic diagram of an embodiment of the present invention;
FIG. 2 is a schematic diagram of an implementation structure of a photomask;
labeled as: the device comprises an ultraviolet light source 10, a condenser 11, an ultraviolet lamp 12, an adjustable beam expander 20, a reflector 30, a light filter 40, a light mask plate 50, an exposure hole 51, a black body base 60, a lifting stage 70, a sample 80 and a light path 90.
Detailed Description
The present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, the ultraviolet exposure apparatus for mask exposure includes an ultraviolet light source 10, an adjustable beam expander 20, a reflector 30, a filter 40, and a photomask plate 50; at least a part of the emitted light of the ultraviolet light source 10 is emitted to the light incident end of the adjustable beam expander 20, the light emitting end of the adjustable beam expander 20 faces the light incident part of the reflector 30, the light reflecting part of the reflector 30 faces the light incident part of the optical filter 40, and the light emitting part of the optical filter 40 faces the light incident part of the optical mask plate 50.
The ultraviolet light source 10 is mainly used for emitting ultraviolet light, and the ultraviolet light source 10 generally needs to be capable of emitting an ultraviolet spectrum including a plurality of wavelength bands for optional use; the uv light source 10 may be various, for example: mercury light sources, LED light sources, etc. The ultraviolet light emitted from the ultraviolet light source 10 may be in a condensed state or a diffused state.
In order to reduce energy loss and increase the energy density of the light beam, as shown in fig. 1, the ultraviolet light source 10 includes a condenser lens 11 and an ultraviolet lamp 12, and the light emitting portion of the ultraviolet lamp 12 is located at the focal point of the condenser lens 11. The condenser lens 11 can reflect the ultraviolet light emitted by the ultraviolet lamp 12, output approximately parallel light and improve the distribution uniformity of light energy; the condenser 11 may be of various kinds, and is preferably an elliptical reflector. The uv lamp 12 is a light emitting member, which may be of various kinds, preferably a mercury arc lamp; the mercury arc lamp can provide ultraviolet light with different wavelengths, the light power is adjustable, and the output light power density can be determined according to the experimental requirements.
Part of light energy emitted by the mercury arc lamp can directly enter a subsequent light path system, but output ultraviolet light is in a divergent state, most of the output ultraviolet light cannot enter the light path system, so that light energy loss is caused, or the incident light is not parallel to become stray light, so that the boundary of an exposure area is blurred, and the ultraviolet light diffuses towards the outside of the boundary to cause deformation of an exposure pattern. However, under the action of the condenser lens 11, the incident ultraviolet light can be collected and modulated, most of the scattered ultraviolet light is reflected into the optical path system, the light energy density is increased, the ultraviolet light reflected by the condenser lens 11 is primarily modulated to become an approximate parallel light beam, the uniformity of light energy distribution is increased, and the exposure quality of the sample 80 is improved.
The adjustable beam expander 20 is a lens assembly capable of changing the diameter and the divergence angle of the light beam, and the magnification of the adjustable beam expander 20 can be changed, and the diameter of the output light beam is generally adjusted according to the size of the sample 80. The adjustable beam expander 20 can also realize beam shaping, output parallel beams, improve light energy distribution uniformity, improve exposure precision, realize that the output light spot diameter is adjustable, and increase the exposure area.
The reflector 30 is an optical element that works according to the law of reflection, and is mainly used to realize the turning of the light path 90, change the direction of the incident beam, make the beam direction perpendicular to the surface of the sample 80 to be exposed, and make the ultraviolet light passing through the reflector 30 pass through the optical filter 40 and the optical mask plate 50 and then reach the surface of the sample 80. The reflecting mirror 30 may be classified into a plane reflecting mirror, a spherical reflecting mirror, and an aspherical reflecting mirror according to the shape, and the plane reflecting mirror is preferably used as the reflecting mirror 30 in the ultraviolet exposure apparatus for mask exposure.
The filter 40 is an optical device for selecting a desired radiation band, and is primarily used to filter undesired spectral bands to select a desired output spectrum. A narrow band filter of a specific wavelength can be selected as the filter 40 according to the requirement.
The photomask plate 50 is mainly used for exposing a sample 80 with a specific pattern, and is provided with exposure pattern holes designed according to requirements; in order to quickly evaluate the etching performance of the photosensitive glass-ceramic material, as shown in fig. 2, at least two exposure holes 51 with different diameters are generally formed in a photomask plate 50. The diameter of the exposure hole 51 is preferably 0.05-2 mm; the exposure holes 51 can be set to be other hole diameters according to the requirement, and the etching performance of different materials can be obtained after ultraviolet exposure, subsequent heat treatment and acid etching processes, namely the minimum hole diameter of different materials which can be etched under the same experimental condition is obtained, so that the minimum through hole depth-to-width ratio of the material is obtained, and the etching performance of different materials can be evaluated rapidly.
On the basis, in order to improve the evaluation accuracy, a plurality of groups of exposure holes 51 are generally formed in the photomask plate 50; as shown in fig. 2, six rows of exposure holes 51 are formed in the photomask plate 50, the aperture of each row of exposure holes 51 is 2mm, 1mm, 0.5mm, 0.2mm, 0.1mm and 0.05mm, and each row includes six exposure holes 51 distributed at intervals.
As a preferable embodiment of the present invention, as shown in fig. 1, the ultraviolet exposure apparatus for mask exposure further includes a black body base 60, and a supporting surface of the black body base 60 corresponds to a light-emitting portion of the photomask plate 50. The sample 80 to be exposed is generally placed on the supporting surface of the black body base 60, and the black body base 60 can absorb ultraviolet light below 400nm, so that the surface reflection is reduced, and the exposure quality is improved.
On the basis of the above, in order to adjust the distance between the sample 80 and the photomask plate 50 to select the optimum exposure position, the ultraviolet exposure apparatus for mask exposure further includes an elevating stage 70, and the black body base 60 is disposed on the elevating stage 70.
The utility model provides an ultraviolet exposure device for mask exposure mainly comprises a collecting lens 11, an ultraviolet lamp 12, an adjustable beam expanding lens 20, a reflecting mirror 30, an optical filter 40, an optical mask plate 50 and a black body base 60 which are sequentially arranged along a light path 90, and also comprises a lifting objective table 70 for arranging the black body base 60; the principle is as follows: the ultraviolet lamp 12 outputs a light source, the condenser lens 11 collects and adjusts input light into parallel light, the energy density of ultraviolet light beams is improved, and the exposure efficiency is improved; the adjustable beam expander 20 optimizes the beam quality and adjusts the diameter of the output beam; the reflector 30 changes the direction of the incident beam, the filter 40 selects a specific exposure wavelength, and the photomask plate 50 exposes the sample 80; the blackbody mount 60 reduces the reflected light from the mount surface and the elevating stage 70 is used to change the exposure distance.
The ultraviolet exposure device for mask exposure has the advantages of low manufacturing cost, uniform light beam quality, simple mask exposure process, convenience in operation, quick experimental period, high precision and the like, and is particularly suitable for exposing a photosensitive microcrystalline glass mask. By collecting light energy and shaping the quality of the light beam, the uniformity of light energy density and the quality of the light beam is improved, the exposure wavelength and the exposure distance can be selected, and the light mask plate 50 with a specific structure is arranged in the ultraviolet exposure process, so that the etching performance of different materials can be evaluated quickly.
Claims (8)
1. An ultraviolet exposure apparatus for mask exposure, characterized in that: the device comprises an ultraviolet source (10), an adjustable beam expander (20), a reflector (30), an optical filter (40) and an optical mask plate (50); at least part of emergent light of the ultraviolet light source (10) irradiates to the light inlet end of the adjustable beam expanding lens (20), the light outlet end of the adjustable beam expanding lens (20) faces to the light inlet part of the reflector (30), the light reflecting part of the reflector (30) faces to the light inlet part of the optical filter (40), and the light outlet part of the optical filter (40) faces to the light inlet part of the optical mask plate (50).
2. The ultraviolet exposure apparatus for mask exposure according to claim 1, wherein: the ultraviolet light source (10) comprises a condenser lens (11) and an ultraviolet lamp (12), and the light emitting part of the ultraviolet lamp (12) is located at the focus of the condenser lens (11).
3. The ultraviolet exposure apparatus for mask exposure according to claim 2, characterized in that: the condenser lens (11) is an elliptical reflector, and the ultraviolet lamp (12) is a mercury arc lamp.
4. The ultraviolet exposure apparatus for mask exposure according to claim 1, wherein: the reflector (30) is a plane reflector.
5. The ultraviolet exposure apparatus for mask exposure according to claim 1, wherein: at least two exposure holes (51) with different diameters are formed in the photomask plate (50).
6. The ultraviolet exposure apparatus for mask exposure according to claim 5, wherein: the diameter of the exposure hole (51) is 0.05-2 mm.
7. The ultraviolet exposure apparatus for mask exposure according to any one of claims 1 to 6, characterized in that: the black body base (60) is further included, and the supporting surface of the black body base (60) corresponds to the light emergent part of the light mask plate (50).
8. The ultraviolet exposure apparatus for mask exposure according to claim 7, wherein: still include lift objective table (70), blackbody base (60) set up on lift objective table (70).
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CN202023144357.7U CN213750656U (en) | 2020-12-22 | 2020-12-22 | Ultraviolet exposure device for mask exposure |
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CN202023144357.7U CN213750656U (en) | 2020-12-22 | 2020-12-22 | Ultraviolet exposure device for mask exposure |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115877675A (en) * | 2023-03-08 | 2023-03-31 | 江苏邑文微电子科技有限公司 | Photoresist curing and exposing system of SiC wafer and process control method thereof |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115877675A (en) * | 2023-03-08 | 2023-03-31 | 江苏邑文微电子科技有限公司 | Photoresist curing and exposing system of SiC wafer and process control method thereof |
CN115877675B (en) * | 2023-03-08 | 2023-05-02 | 江苏邑文微电子科技有限公司 | Photoresist curing and exposing system of SiC wafer and process control method thereof |
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