CN213716855U

CN213716855U - Tray structure of etching machine

Info

Publication number: CN213716855U
Application number: CN202022615897.2U
Authority: CN
Inventors: 陈胜江
Original assignee: Hangzhou Paz Electronics Co ltd
Current assignee: Hangzhou Paz Electronics Co ltd
Priority date: 2020-11-12
Filing date: 2020-11-12
Publication date: 2021-07-16
Anticipated expiration: 2030-11-12

Abstract

The application relates to the technical field of etching machines and discloses an etching machine tray structure which comprises a tray, wherein a plurality of circular grooves for placing silicon wafers are formed in the tray, a cover plate is arranged above the tray and detachably connected with the cover plate, an annular positioning part is formed at the edge of the cover plate, the inner side wall of the positioning part is contacted with the outer side wall of the tray, a positioning pin is fixedly connected with the tray, a pin hole in sliding fit with the positioning pin is formed in the cover plate, through holes are formed in the positions, opposite to the grooves, of the cover plate, annular contact parts are formed in the outer edges of the through holes and are positioned on the lower surface of the cover plate, when the cover plate is covered on the tray, the contact part is contacted with the upper surface of the silicon chip arranged in the groove, through being provided with the apron on the tray, fix the silicon chip in the recess through the gravity of apron self, avoid the vibrations at the removal in-process of tray to lead to the silicon chip to break away from the recess.

Description

Tray structure of etching machine

Technical Field

The utility model relates to an etching machine technical field especially relates to an etching machine tray structure.

Background

Dry etching is a method of etching a thin film using plasma. When the gas exists in the form of plasma, the chemical activity of the gas is much stronger than that of the gas in the normal state, and the gas can react with the material more quickly by selecting proper gas according to different etched materials, so that the aim of etching processing is fulfilled.

In the actual operation process, the silicon wafers are usually placed in the grooves on the tray one by using a manipulator, then the tray is placed in the reaction chamber, and the ionized gas etches the silicon wafers. The tray of the etching machine is directly contacted with a semiconductor silicon wafer to position and clamp the silicon wafer, a large amount of heat can be generated in the etching process, and cooling gas can be introduced between the tray and the silicon wafer to cool the silicon wafer. The tray is easy to vibrate in the transferring process, so that the silicon wafer is easy to separate from the groove, and the fixing effect is poor.

SUMMERY OF THE UTILITY MODEL

The utility model provides an etching machine tray structure, it possesses the difficult characteristics that break away from the recess of silicon chip.

In order to achieve the above purpose, the basic scheme of the utility model is as follows:

the utility model provides an etching machine tray structure, includes the tray, set up a plurality of circular shape recesses that are used for placing the silicon chip on the tray, the tray top is provided with the apron, the tray can be dismantled with the apron and be connected, the edge of apron is formed with annular location portion, the inside wall of location portion contacts with the lateral wall of tray, fixedly connected with locating pin on the tray, set up the pinhole with locating pin sliding fit on the apron, the through-hole has been seted up on the position relative with each recess to the apron, be formed with annular contact site in the outer fringe of through-hole, the contact site is on the lower surface of apron, and when the apron lid fits on the tray, the contact site contacts with the upper surface of the silicon chip of placing in the recess.

Further, sliding connection has the board of placing that is used for placing the silicon chip in the recess, fixedly connected with a plurality of compression springs between the bottom surface of placing board and recess, the upper surface of placing the board is less than the upper surface of tray, can fix the silicon chip of multiple different thickness through the board of placing that can reciprocate in the recess sets up, improves the suitability of tray to place the board and can take place slight slope in the recess, avoid because the damage of the silicon chip that the silicon chip surface atress is inhomogeneous leads to, can reduce the machining precision of recess bottom surface, can change when necessary and place the board and needn't change whole tray, more possess economic nature.

Further, the bottom of tray is provided with the air inlet that is used for letting in cooling gas and a plurality of gas outlets that are used for discharging the helium, be provided with the gas flow in the tray, it has the connecting hole to run through on the board to place, place the board and seted up a plurality of spread grooves on the surface that the silicon chip contacted, connecting hole and spread groove communicate each other place and be formed with the clearance that holds the gas outflow between the edge of board and the inner wall of recess, when letting in cooling gas to the air inlet, cooling gas passes through the gas flow and gets into the recess, by the connecting hole get into in the spread groove and discharge by the gas outlet after the clearance, need let in cooling gas at the in-process of sculpture and cool off the silicon chip.

Furthermore, the gas flow channels are uniformly distributed along the circumference of the circle center of the tray, cooling gas uniformly enters each groove through the gas flow channels, and the silicon wafers in each groove are uniformly cooled.

Further, the placing plate is circular, the connecting grooves are evenly distributed along the circle center circumference of the placing plate, cooling gas can evenly reach the bottom surface of the silicon wafer, and the cooling effect is good.

Furthermore, a guide surface inclined towards the groove is formed on the side wall of the groove, the lower edge of the guide surface is higher than the upper surface of the placing plate, and when the silicon wafer falls on the guide surface, the silicon wafer slides into the groove along the guide surface, so that the operation of manually assisting in feeding is reduced.

Furthermore, a plurality of holding tanks that are used for holding the manipulator and stretch into are seted up at the edge of recess, avoid manipulator and tray to take place to interfere.

Compared with the prior art, the scheme has the beneficial effects that:

the cover plate is arranged on the tray, and the silicon wafer is fixed in the groove through the gravity of the cover plate, so that the silicon wafer is prevented from being separated from the groove due to vibration in the moving process of the tray; the tray and the cover plate are positioned through the positioning pin, so that the contact part is convenient to abut against the edge of the upper surface of the silicon chip, the positioning effect is good, and the cover plate is prevented from covering a region to be etched on the silicon chip; the inner side wall of the positioning part is in contact with the outer side wall of the tray, so that the cover plate is prevented from sliding on the tray transversely, the contact area is large, a large circumferential force can be borne, and meanwhile, the positioning pin can be prevented from being damaged; the apron lid closes in the tray top, avoids causing the damage to the tray among the etching process, prolongs the life of tray.

Drawings

Fig. 1 is a cross-sectional view of the tray structure of the etching machine of the present invention in a use state;

FIG. 2 is a schematic view of the overall structure of the tray of the present invention;

FIG. 3 is a schematic cross-sectional view of a tray according to the present invention;

fig. 4 is a schematic structural view of the middle placement plate of the present invention.

Reference numerals in the drawings of the specification include:

1. a tray; 11. a groove; 111. a guide surface; 112. accommodating grooves; 12. positioning pins; 13. an air inlet; 14. a gas flow channel; 15. an air outlet; 2. a cover plate; 21. a positioning part; 22. a through hole; 221. a contact portion; 3. placing the plate; 31. a compression spring; 32. connecting holes; 33. connecting grooves; 34. a gap; 4. and (3) a silicon wafer.

Detailed Description

The invention will be described in further detail by means of specific embodiments with reference to the accompanying drawings:

example (b):

the utility model provides an etching machine tray structure, as shown in fig. 1, including tray 1, set up seven recesses 11 that are used for placing silicon chip 4 on the tray 1, equal sliding connection has the board 3 of placing that is used for placing silicon chip 4 in each recess 11, fixedly connected with a plurality of compression spring 31 between the bottom surface of placing board 3 and recess 11, the upper surface of placing board 3 is less than the upper surface of tray 1, when silicon chip 4 places on placing board 3, the upper surface of silicon chip 4 exposes in recess 11 outward. The side wall of the recess 11 is formed with a guide surface 111 inclined toward the recess 11, and the lower edge of the guide surface 111 is higher than the upper surface of the placing plate 3. Tray 1 top is provided with apron 2, tray 1 can dismantle with apron 2 and be connected, the edge of apron 2 is formed with annular location portion 21, the inside wall of location portion 21 contacts with tray 1's lateral wall, through-hole 22 has been seted up on apron 2 and the relative position of each recess 11, the aperture of through-hole 22 is less than the diameter of silicon chip 4, be formed with annular contact site 221 on through-hole 22's the outer fringe, contact site 221 is located the lower surface of apron 2, when apron 2 lid fits on tray 1, contact site 221 offsets with the edge of placing the silicon chip 4 upper surface in recess 11.

As shown in fig. 1 and 2, the bottom of the tray 1 is provided with an air inlet 13 for introducing cooling gas and a plurality of air outlets 15 for discharging helium gas, the tray 1 is provided with a gas flow passage 14 therein, the placing plate 3 is provided with a connecting hole 32 therethrough, the placing plate 3 is provided with a plurality of connecting grooves 33 on the surface contacting the silicon wafer 4, the connecting hole 32 and the connecting grooves 33 are communicated with each other, a gap 34 for accommodating gas outflow is formed between the edge of the placing plate 3 and the inner wall of the groove 11, when the cooling gas is introduced into the air inlet 13, the cooling gas enters the groove 11 through the gas flow passage 14, enters the connecting grooves 33 from the connecting hole 32 and is discharged from the air outlets 15 after passing through the gap 34.

As shown in fig. 2, two positioning pins 12 are fixedly connected to the tray 1, pin holes (not shown) slidably engaged with the positioning pins 12 are formed in positions of the tray 1 corresponding to the positioning pins 12, and a plurality of accommodating grooves 112 for accommodating a manipulator extending into the grooves 11 are formed in edges of the grooves.

As shown in fig. 3 and 4, the number of the gas flow passages 14 is set to six, the respective gas flow passages 14 are uniformly distributed along the circumference of the center of the circle of the tray 1, the number of the coupling grooves 33 is set to eight, the placing plate 3 is circular, and the coupling grooves 33 are uniformly distributed along the circumference of the center of the circle of the placing plate 3.

The specific implementation mode of the scheme is as follows:

when using tray 1, the manipulator snatchs silicon chip 4 and stretches into in the holding tank 112 at recess 11 edge, silicon chip 4 falls into in the recess 11 and places on placing board 3, after all placing silicon chip 4 in each recess 11 on tray 1, align locating pin 12 on the tray 1 with the pinhole on the apron 2, and with apron 2 lid fit on tray 1, under the effect of apron 2 self gravity again, the contact site 221 on the apron 2 offsets with the edge of silicon chip 4, compression spring 31 receives the extrusion and is compressed. And transferring the tray 1 covered with the cover plate 2 into a reaction chamber, etching the part of the silicon wafer 4 exposed out of the cover plate 2 by using circuit gas, and cooling the gas to the passage of the silicon wafer 4 through the gas inlet 13 during etching. The cooling gas enters each of the grooves 11 through the gas flow passages 14 and enters the connecting grooves 33 from the connecting holes 32 in the placing plate 3, passes through the lower surface of the silicon wafer 4 through the connecting grooves 33, carries away heat generated during etching, flows out from the gap 34 between the placing plate 3 and the groove 11, and is discharged from the gas outlet 15.

The above description is only an example of the present invention, and the common general knowledge of the known specific structures and characteristics of the embodiments is not described herein. It should be noted that, for those skilled in the art, without departing from the structure of the present invention, several modifications and improvements can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicability of the patent. The scope of the claims of the present application shall be determined by the contents of the claims, and the description of the embodiments and the like in the specification shall be used to explain the contents of the claims.

Claims

1. The utility model provides an etching machine tray structure, includes tray (1), set up a plurality of recesses (11) that are used for placing silicon chip (4) on tray (1), its characterized in that: tray (1) top is provided with apron (2), tray (1) can be dismantled with apron (2) and be connected, fixedly connected with locating pin (12) on tray (1), set up on apron (2) with locating pin (12) sliding fit's pinhole, the edge of apron (2) is formed with annular location portion (21), the inside wall of location portion (21) contacts with the lateral wall of tray (1), through-hole (22) have been seted up on apron (2) and the relative position of each recess (11), be formed with annular contact site (221) on the outer fringe of through-hole (22), contact site (221) are located the lower surface of apron (2), and when apron (2) lid fits on tray (1), contact site (221) offset with the edge of placing silicon chip (4) upper surface in recess (11).

2. The etcher tray structure of claim 1, wherein: the silicon wafer placing device is characterized in that a placing plate (3) used for placing a silicon wafer (4) is connected in the groove (11) in a sliding mode, a plurality of compression springs (31) are fixedly connected between the placing plate (3) and the bottom face of the groove (11), and the upper surface of the placing plate (3) is lower than the upper surface of the tray (1).

3. The etcher tray structure of claim 2, wherein: the bottom of tray (1) is provided with air inlet (13) and a plurality of gas outlet (15) that are used for discharging the helium that are used for letting in cooling gas, be provided with gas flow channel (14) in tray (1), it has connecting hole (32) to run through on board (3) to place, place and seted up a plurality of spread groove (33) on the surface that board (3) and silicon chip (4) contacted, connecting hole (32) and spread groove (33) intercommunication each other be formed with between the edge of placing board (3) and the inner wall of recess (11) and hold clearance (34) that the gas flows out, when letting in cooling gas to air inlet (13), cooling gas gets into recess (11) through gas flow channel (14), gets into in spread groove (33) and discharges by gas outlet (15) behind clearance (34) by connecting hole (32).

4. The etcher tray structure of claim 3, wherein: the gas flow channels (14) are uniformly distributed along the circle center circumference of the tray (1).

5. The etcher tray structure of claim 3, wherein: the placing plate (3) is circular, and the connecting grooves (33) are evenly distributed along the circle center circumference of the placing plate (3).

6. The etcher tray structure of claim 2, wherein: the side wall of the groove (11) is provided with a guide surface (111) inclined towards the groove (11), and the lower edge of the guide surface (111) is higher than the upper surface of the placing plate (3).

7. The etcher tray structure of claim 1, wherein: the edge of the groove (11) is provided with a plurality of accommodating grooves (112) for accommodating the extending-in manipulator.