CN213680874U - Plasma vapor deposition apparatus - Google Patents

Abstract

The utility model relates to a plasma vapor deposition device, which comprises at least two process chambers which are in sealing butt joint in sequence; an opening is formed in the side wall of any process chamber, which is butted with the adjacent process chamber; and one of the two adjacent process chambers is provided with a valve capable of sealing the opening of the side wall close to the other process chamber. According to the plasma vapor deposition equipment, the valve is arranged in the process chambers, so that a valve sealing chamber is not required to be arranged between two adjacent process chambers, namely the two process chambers can be directly in sealing butt joint, the sealing structure between the two adjacent process chambers is reduced, and the risk of sealing failure between the two adjacent process chambers is reduced.

Description

Plasma vapor deposition apparatus

Technical Field

The utility model relates to a plasma vapor deposition field especially relates to a plasma vapor deposition equipment.

Background

The statements herein merely provide background information related to the present application and may not necessarily constitute prior art.

Generally, in order to meet the requirements of a plurality of processes requiring processing under a sealed condition, such as multiple coating of a product, a plasma vapor deposition apparatus includes a plurality of process chambers. In order to realize the conveying of products between the two process chambers, the side walls of the two adjacent process chambers are respectively provided with an opening, a valve sealing chamber is arranged between the two process chambers, and the two side walls of the valve sealing chamber are respectively provided with an opening and are respectively in sealing butt joint with the openings on the side walls of the two adjacent process chambers. And valves for sealing the openings on the two side walls are arranged in the valve sealing chambers respectively. Thus, the product can be transferred between two adjacent process chambers by opening the valve.

However, in the conventional plasma vapor deposition apparatus, the seal between two adjacent process chambers is prone to fail, which affects the sealing effect of the process chambers, and further affects the process effect, and may seriously cause leakage risk.

SUMMERY OF THE UTILITY MODEL

In view of the above, there is a need for a plasma vapor deposition apparatus that can reduce the risk of seal failure between two adjacent process chambers.

A plasma vapor deposition device comprises at least two process chambers which are in sealing butt joint in sequence; an opening is formed in the side wall of any process chamber, which is butted with the adjacent process chamber; and one of the two adjacent process chambers is provided with a valve capable of sealing the opening of the side wall close to the other process chamber.

According to the plasma vapor deposition equipment, the valve is arranged in the process chambers, so that a valve sealing chamber is not required to be arranged between two adjacent process chambers, namely the two process chambers can be directly in sealing butt joint, the sealing structure between the two adjacent process chambers is reduced, and the risk of sealing failure between the two adjacent process chambers is reduced.

In one embodiment, the at least two process chambers include at least two removably coupled first process chambers; the two opposite side walls of the first process chamber are provided with the openings, and only one opening is provided with the valve; the side wall of the opening of the first process chamber, which can be sealed, is a first side wall, and the side wall of the opening, which can not be sealed, is a second side wall; the first side wall of one first process chamber can be detachably and hermetically butted with the second side wall of the other first process chamber.

In one embodiment, the at least two process chambers further include a second process chamber, the opening is formed on a sidewall of one side of the second process chamber, and the sidewall of the second process chamber, on which the opening is formed, is a third sidewall; the third sidewall of the second process chamber may be removably and sealingly mated with the first sidewall of the first process chamber.

In one embodiment, the at least two process chambers further include a third process chamber, wherein the opening is formed on a sidewall of the third process chamber, and the valve is disposed in the third process chamber to seal the opening on the sidewall of the third process chamber; the side wall of the third process chamber, which is provided with the opening, is a fourth side wall, and the fourth side wall of the third process chamber and the second side wall of the first process chamber can be detachably, hermetically and butted.

In one embodiment, the valves are disposed in the process chamber and correspond to the openings on the sidewall of the process chamber.

In one embodiment, a partition is disposed in the process chamber in which the valve is disposed to partition the process chamber into a valve accommodating space and a process space.

In one embodiment, the apparatus further comprises a valve driving assembly, wherein the valve driving assembly comprises a rotating shaft which is rotatably arranged in the process chamber, and the valve is fixedly connected with the rotating shaft.

In one embodiment, the valve driving assembly further comprises an air cylinder, and the air cylinder extends and retracts to drive the rotating shaft to rotate.

In one embodiment, the cylinder is hinged to a chamber wall of the process chamber, and the valve actuating assembly further comprises a rocker arm hinged to the cylinder and fixedly connected to the rotating shaft.

In one embodiment, the valve driving assembly includes two cylinders and two rocker arms, the two rocker arms are respectively and fixedly connected with two ends of the rotating shaft, and the two rocker arms are respectively hinged with the two cylinders.

In one embodiment, the cylinder and the rocker arm are both disposed outside of the process chamber; and the side wall of the process chamber is provided with a through hole, and the rotating shaft is hermetically arranged in the through hole in a penetrating way.

Drawings

Fig. 1 is a schematic structural diagram of a plasma vapor deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic diagram of the first process chamber of FIG. 1.

Fig. 3 is a schematic view of the valve of fig. 2 in an open state.

Fig. 4 is a schematic view of the valve of fig. 2 in a closed state.

FIG. 5 is a schematic diagram of the second process chamber of FIG. 1.

FIG. 6 is a schematic diagram of the third process chamber of FIG. 1.

Fig. 7 is a schematic structural diagram of a plasma vapor deposition apparatus according to another embodiment of the present invention.

Fig. 8 is a schematic structural diagram of a plasma vapor deposition apparatus according to another embodiment of the present invention.

100/200, plasma vapor deposition equipment; 111. an opening; 113. perforating; 112. a first process chamber; 114. a second process chamber; 116. a third process chamber; 130. a valve; 151. a rotating shaft; 153. a cylinder; 155. a rocker arm; 170. a separator; 171. a valve accommodating space; 173. a process space; 10. a magnetic fluid structure; 20. a first side wall; 30. a second side wall; 40. a third side wall; 50. and a fourth side wall.

Detailed Description

In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

As shown in fig. 1 to 6, a plasma vapor deposition apparatus 100 according to an embodiment of the present invention includes four process chambers that are sequentially sealed and butted; the side wall of any process chamber, which is butted with the adjacent process chamber, is provided with an opening 111; two adjacent process chambers, one of which is provided with a valve 130 for sealing the opening 111 of the adjacent sidewall.

Traditionally, among the plasma vapor deposition equipment, because set up the valve seal room between adjacent process chamber, so need two lateral walls that are equipped with the open-ended of valve respectively with two adjacent process chamber sealed, seal structure is more, and arbitrary seal structure inefficacy all can influence process chamber's sealed effect, and then influences process effect, serious can lead to the leakage risk.

In the present application, the valve 130 is disposed in the process chamber of the plasma vapor deposition apparatus 100, so that a valve 130 sealing chamber is not required to be disposed between two adjacent process chambers, that is, the two process chambers can be directly sealed and butted, thereby reducing a sealing structure between the two adjacent process chambers, reducing a risk of sealing failure between the two adjacent process chambers, and improving reliability of the apparatus. Furthermore, the time for maintenance due to sealing failure can be reduced, the operating efficiency of the plasma meteorological deposition equipment is improved, and the production cost is reduced. Of course, reducing the number of chambers sealed by the valve 130 also reduces the cost of the plasma deposition apparatus.

It is to be understood that, in other possible embodiments, the structure of the process chamber in one plasma vapor deposition apparatus is not limited thereto, and may be set as desired, such as two, three, or more than four.

In addition, the arrangement of the sealing chamber of the valve 130 is reduced, so that the volume of the plasma vapor deposition equipment is reduced, the size of the occupied space of the plasma vapor deposition equipment is reduced, and the miniaturization requirement of the plasma vapor deposition equipment is met.

In addition, the arrangement of the sealing chamber of the valve 130 is reduced, so that the complexity of a butt joint structure between two adjacent process chambers is reduced, the complexity of the sealing butt joint operation of the two adjacent process chambers is simplified, and the butt joint time of the two adjacent process chambers is reduced.

In addition, the arrangement of the sealing chamber of the valve 130 is reduced, so that a product to be processed can be directly conveyed from one process chamber to an adjacent process chamber, the conveying distance of the product is reduced, the conveying time of the product is shortened, and the preparation efficiency of the product is improved.

It will be appreciated that the valve 130 has two states, open and closed. Referring to fig. 3, the valve 130 seals the corresponding opening 111 in a closed state. Referring to fig. 4, when the valve 130 is in an open state, the valve 130 is offset from the opening 111 such that the product can be delivered from the opening 111 into an adjacent process chamber.

Alternatively, referring to fig. 1-4, in the present embodiment, the four process chambers include two removably coupled first process chambers 112. Openings 111 are provided in both opposing side walls of the first process chamber 112, and only one of the openings is provided with the valve. The sidewall of the first process chamber 112 that can be sealed to the opening 111 is the first sidewall 20, and the sidewall of the first process chamber that can not be sealed to the opening 111 is the second sidewall 30. The first sidewall 20 of a first process chamber 112 may be removably and sealingly mated with the second sidewall 30 of another first process chamber 112. Thus, the number of first process chambers 112 may be selected as desired.

In addition, since two adjacent first process chambers 112 may be detachably connected, the number of the first process chambers 112 may be increased or decreased as required after the process steps are adjusted. And in the case where one or more of the first process chambers 112 are damaged and cannot be used continuously or require a long period of maintenance, the plasma vapor deposition apparatus can continue to operate by replacing the first process chamber 112 in question.

Of course, it is understood that the plasma vapor deposition apparatus may also include more than two first process chambers in other possible embodiments.

Optionally, referring to fig. 1 and 5, the four process chambers further include a second process chamber 114. An opening 111 is formed on a sidewall of the second process chamber 114, and a sidewall of the second process chamber 114 on which the opening 111 is formed is the third sidewall 40. The third sidewall 40 of the second process chamber 114 may be removably and sealingly mated with the first sidewall 20 of the first process chamber 112. It is understood that the second process chamber 114 is provided with openings 111 only on the side wall that is in sealed abutment with the first process chamber 112, and the other side wall is not provided with openings 111.

Optionally, referring to fig. 1 and 6, the four process chambers further include a third process chamber 116, and an opening 111 is formed on a sidewall of the third process chamber 116. The valve 130 is disposed in the third process chamber 116 to seal the opening 111 in the sidewall of the third process chamber 116. The sidewall of the third process chamber 116 where the opening 111 is provided is the fourth sidewall 50. The fourth sidewall 50 of the third process chamber 116 may be removably and sealingly interfaced with the second sidewall 30 of the first process chamber 112. Therefore, the third process chamber 116 can be used as a sealing chamber at the end of the plasma vapor deposition apparatus, and the operation that the side wall with the opening 111 needs to be blocked without being butted with another sealing chamber to block the opening 111 can be avoided, and meanwhile, the sealing effect of the third process chamber 116 can be better ensured.

It is understood that the second process chamber 114 and the third process chamber 116 may exist simultaneously and are located at both ends of the several process chambers, respectively. Of course, in a possible embodiment, the plasma vapor deposition apparatus may also have only the first process chamber and the second process chamber, or only the first process chamber and the third process chamber, or only the first process chamber.

It is to be understood that although the assembled plasma vapor deposition apparatus 100 may include only one second process chamber 114, the plasma vapor deposition apparatus 100 may include two or more second process chambers 114, and at least one more second process chamber 114 may be provided as a spare.

Similarly, although the assembled plasma vapor deposition apparatus 100 may include only one third process chamber 116, the plasma vapor deposition apparatus 100 may include two or more third process chambers 116, and at least one more third process chamber 116 may be provided as a spare.

In this embodiment, the internal volumes of the first, second and third process chambers 112, 114, 116 are the same size and shape. It is understood that in other possible embodiments, the first process chamber 112, the second process chamber 114, and the third process chamber 116 may be sized as desired, without limiting the size and shape of their interior spaces to be identical.

In this embodiment, referring to fig. 2 to 4, the plasma vapor deposition apparatus 100 further includes a valve 130 driving assembly, the valve 130 driving assembly includes a rotating shaft 151 rotatably disposed in the process chamber, and the valve 130 is fixedly connected to the rotating shaft 151. Namely, the valve 130 is driven to rotate by the rotation of the rotating shaft 151, so as to open and close the valve 130.

Further, in this embodiment, the valve 130 driving assembly further includes an air cylinder 153, and the air cylinder 153 extends and contracts to drive the rotating shaft 151 to rotate. That is, the air cylinder 153 operates to drive the rotation shaft 151 to open and close the valve 130, as shown in fig. 2.

In this embodiment, the cylinder 153 is disposed on a wall of the process chamber. Of course, it is understood that in other possible embodiments, the cylinder may be disposed on other structures such as a support frame of the plasma vapor deposition apparatus or a ground surface on which the plasma vapor deposition apparatus is disposed.

Of course, in other possible embodiments, the rotation shaft is not limited to be driven to rotate by the air cylinder, and the rotation shaft may be driven to rotate by a motor or the like.

Specifically, in this embodiment, the cylinder 153 is hinged to a chamber wall of the process chamber, and the valve 130 driving assembly further includes a rocker arm 155 hinged to the cylinder 153 and fixedly connected to the shaft 151. Thus, the cylinder 153 can extend and contract to drive the axis of the rotating shaft 151 of the rocker arm 155 to rotate, and further drive the rotating shaft 151 to rotate.

In this embodiment, the valve 130 driving assembly includes two cylinders 153 and two rocker arms 155, the two rocker arms 155 are respectively fixedly connected with two ends of the rotating shaft 151, the two rocker arms 155 are respectively hinged to the two cylinders 153, so that the stress concentration phenomenon at one end of the rotating shaft 151 can be avoided, the risk that the rotating shaft 151 is easily deformed due to the local stress concentration can be effectively avoided, and the rotation of the rotating shaft 151 can be more stable.

In this embodiment, the cylinder 153 and the rocker arm 155 are both located outside of the process chamber. The sidewall of the process chamber is provided with a through hole 113, and the rotating shaft 151 is hermetically inserted into the through hole 113. On one hand, the cylinder 153 and the rocker arm 155 can be prevented from occupying the space of the process chamber due to being positioned in the process chamber; on the other hand, the operator can easily determine the open/close state of the valve 130 based on the states of the cylinder 153 and the rocker arm 155.

It will be appreciated that in order to ensure the tightness of the process chamber, the shaft 151 is sealingly disposed against the inner wall of the bore 113. Specifically, in the present embodiment, the sealing between the rotating shaft 151 and the inner wall of the through hole 113 is achieved by the magnetic fluid structure 10. Of course, it is understood that in other possible embodiments, the magnetic fluid structure 10 is not limited to being sealed by the magnetic fluid structure 10, but may be sealed by a sealing structure such as a fluid or a sealing ring.

It is understood that, in another possible embodiment, the cylinder and the rotating shaft are not limited to be connected through a rocker arm, but may also be connected through other structures, such as a gear and rack transmission structure, etc., and the rotating shaft can be driven to rotate through the expansion and contraction of the cylinder.

Alternatively, in a possible embodiment, the rocker arm is detachably connected to the cylinder. Thus, the operator can rotate the rotating shaft by manually driving the rotating shaft without a power supply or the like. Further, the rocker arm may act as a handle.

Of course, in a possible embodiment, a handle suitable for being held by an operator may be additionally provided, or the rocker arm may be directly provided with a structure suitable for being held.

Further, optionally, a first limiting member and a second limiting member are fixedly disposed on an outer sidewall of the process chamber. The first limiting piece is used for limiting the rotating shaft to continue rotating when the rotating shaft rotates until the valve is closed; the second limiting piece is used for limiting the rotating shaft to continue rotating when the rotating shaft rotates until the valve is opened. The first limiting part and the second limiting part are both positioned on the outer side wall of the process chamber, so that an operator can accurately judge the opening and closing state of the valve conveniently. Therefore, when the rotating shaft rotates to close the valve, the valve is prevented from exerting larger pressure on the edge of the opening of the side wall of the process chamber due to the fact that the rotating shaft continues to rotate, and further the risk that the edge of the opening of the side wall of the process chamber is easily damaged due to the fact that the edge is stressed to be larger is avoided. Of course, when the rotating shaft rotates to open the valve, the impact of the valve and the inner wall of the process chamber caused by the continuous rotation of the rotating shaft can be avoided, and the product in conveying or equipment in the process chamber can be prevented from being collided by mistake due to the transitional rotation of the valve. Thereby the service life of the process chamber can be better ensured.

It is understood that the plasma vapor deposition apparatus 100 further includes a plasma generating structure disposed in the process chamber, and the like, which is disposed by conventional means in the art and will not be described herein.

Additionally, it is understood that in a possible embodiment, an access port may also be provided in one of the sidewalls of the second process chamber 114 that is not interfaced with the first process chamber 112, and an access port sealing valve may be provided to seal the access port; a port is provided in one side wall of the third process chamber 116 that is not interfaced with the first process chamber 112 and a port sealing valve is provided that can seal the port. Therefore, products to be processed by the plasma vapor deposition equipment can be conveniently conveyed into the process chamber, and the products processed by the plasma vapor deposition equipment can also be conveniently conveyed out of the process chamber.

As shown in fig. 7, another embodiment of the present invention provides a plasma vapor deposition apparatus 200, which is different from the plasma vapor deposition apparatus 100 in that: a partition 170 is provided in the process chamber having the valve 130 to divide the process chamber into a valve accommodating space 171 and a process space 173. The valve 130 is accommodated in the valve accommodating space 171, and other process devices are accommodated in the process space 173. Therefore, the plasma generated in the process is prevented from depositing on the valve 130 to influence the function of the valve 130, and the sealing performance between the valve 130 and the edge of the opening 111 in a closed state is further prevented from being influenced due to the structural change of the valve 130, so that the sealing of the process chamber is ensured.

It will be appreciated, of course, that the divider 170 may also be provided with openings (not shown) through which product may be delivered in order to allow product to be delivered from one process chamber to an adjacent process chamber through the openings 111 in the side walls of the process chamber.

As shown in fig. 8, another embodiment of the present invention provides a plasma vapor deposition apparatus 300, which is different from the plasma vapor deposition apparatus 100 in that one of two adjacent process chambers is provided with a valve 130 for sealing the opening 111 thereof adjacent to the other side wall; the sidewall of one process chamber of the plurality of process chambers that interfaces with an adjacent process chamber is provided with an opening 111. Specifically, in the embodiment shown in fig. 8, 4 process chambers connected in sequence are provided, and from left to right, the sidewalls of the left and right ends of the second process chamber are respectively butted with the first process chamber and the third process chamber, wherein the openings 111 on the two sidewalls of the second process chamber are provided with the valves 130. Thus, neither the first process chamber nor the third process chamber may have a valve, but it is still ensured that in two adjacent process chambers, one of them has a valve 130 that seals the opening 111 near the other side wall. The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims (10)

1. The plasma vapor deposition equipment is characterized by comprising at least two process chambers which are in sealing butt joint in sequence; an opening is formed in the side wall of any process chamber, which is butted with the adjacent process chamber; and one of the two adjacent process chambers is provided with a valve capable of sealing the opening of the side wall close to the other process chamber.

2. The plasma vapor deposition apparatus of claim 1, wherein the at least two process chambers comprise at least two removably connected first process chambers; the two opposite side walls of the first process chamber are provided with the openings, and only one opening is provided with the valve;

the side wall of the opening of the first process chamber, which can be sealed, is a first side wall, and the side wall of the opening, which can not be sealed, is a second side wall; the first side wall of one first process chamber can be detachably and hermetically butted with the second side wall of the other first process chamber.

3. The plasma vapor deposition apparatus according to claim 2, wherein the at least two process chambers further include a second process chamber, the opening is provided on a side wall of the second process chamber, and the side wall of the second process chamber provided with the opening is a third side wall; the third side wall of the second process chamber can be detachably and hermetically butted with the first side wall of the first process chamber;

and/or the at least two process chambers further comprise a third process chamber, the opening is arranged on the side wall of one side of the third process chamber, and the valve is arranged in the third process chamber to seal the opening on the side wall of the third process chamber; the side wall of the third process chamber, which is provided with the opening, is a fourth side wall, and the fourth side wall of the third process chamber and the second side wall of the first process chamber can be detachably, hermetically and butted.

4. The plasma vapor deposition apparatus of claim 1, wherein the valves are disposed in one-to-one correspondence with the openings in the sidewall of any of the process chambers.

5. The plasma vapor deposition apparatus of claim 1, wherein a partition is provided in the process chamber in which the valve is provided to partition the process chamber into a valve accommodating space and a process space.

6. The plasma vapor deposition apparatus of any one of claims 1 to 5, further comprising a valve drive assembly, the valve drive assembly comprising a shaft rotatably disposed within the process chamber, the valve fixedly coupled to the shaft.

7. The plasma vapor deposition apparatus of claim 6, wherein the valve drive assembly further comprises a cylinder that telescopes to drive the shaft in rotation.

8. The plasma vapor deposition apparatus of claim 7, wherein the cylinder is hingedly attached to a chamber wall of the process chamber, and the valve drive assembly further comprises a rocker arm hingedly attached to the cylinder and fixedly attached to the shaft.

9. The plasma vapor deposition apparatus according to claim 8, wherein the valve driving assembly includes two of the cylinders and two of the rocker arms, the two rocker arms are respectively fixedly connected to both ends of the rotating shaft, and the two rocker arms are respectively hinged to the two cylinders.

10. The plasma vapor deposition apparatus of claim 8, wherein the cylinder and the rocker arm are both disposed outside of the process chamber; and the side wall of the process chamber is provided with a through hole, and the rotating shaft is hermetically arranged in the through hole in a penetrating way.

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