CN213661499U - Three-phase permanent magnet motor drive circuit - Google Patents
Three-phase permanent magnet motor drive circuit Download PDFInfo
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- CN213661499U CN213661499U CN202022414819.6U CN202022414819U CN213661499U CN 213661499 U CN213661499 U CN 213661499U CN 202022414819 U CN202022414819 U CN 202022414819U CN 213661499 U CN213661499 U CN 213661499U
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Abstract
The utility model relates to the technical field of motor drive, in particular to a three-phase permanent magnet motor drive circuit, which comprises a three-phase half-bridge inverter circuit, wherein the three-phase half-bridge inverter circuit is formed by connecting three single-phase half-bridge inverter circuits in parallel, the three-phase half-bridge inverter circuit is also connected with a capacitor in parallel, and the three-phase half-bridge inverter circuit and the capacitor are both supplied with power by a direct current power supply; three phase lines are led out from the external output end of the three-phase half-bridge inverter circuit, a high-voltage semiconductor device is connected in each phase line of the three phase lines in series, and the tail ends of the three phase lines are electrically connected with the three-phase permanent magnet motor and drive the three-phase permanent magnet motor; the utility model solves the problem that the safety and the control performance of the motor are contradictory when the motor is driven by the traditional three-phase half-bridge; and a semiconductor device with a lower voltage grade matched with the direct current side can be adopted, so that the cost and the volume can be reduced, and a higher switching frequency can be adopted to meet the control performance requirement.
Description
Technical Field
The utility model relates to a motor drive technical field, concretely relates to three-phase permanent-magnet machine drive circuit.
Background
The three-phase permanent magnet motor is mature in application and is one of the mainstream motor types at present. The three-phase permanent magnet motor driving circuit mostly adopts a three-phase half-bridge topology, and related modulation technologies comprise SPWM, SVPWM and the like, and are developed to be mature. In order to obtain higher power density, the highest rotating speed counter potential designed for the permanent magnet motor is often higher than the voltage of a preceding-stage direct current bus, so that a field weakening speed raising technology is required to be used in a high-speed stage, but in consideration of fault conditions such as control failure and the like, the highest rotating speed counter potential of the permanent magnet motor is lower than the highest withstand voltage of a preceding-stage circuit including a three-phase half-bridge switching tube, a battery system and other circuit electric equipment.
This limits to some extent the field weakening depth that can be achieved when designing permanent magnet motors, which in turn limits the further increase in power density of permanent magnet motors in certain specific environments. Further, semiconductor switching devices such as IGBTs and the like, whose higher breakdown voltage level, generally larger switching loss, lower switching frequencies can be used; but the high-speed operation of the motor is controlled by matching the three-phase half-bridge switching frequency with the motor rotating speed, so that a better control effect can be achieved.
However, when a motor with extremely high back electromotive force is driven by the conventional three-phase half-bridge structure, if the semiconductor switch with the lower voltage level matched with the direct-current bus is selected, safety risk exists, and if the semiconductor switch with the higher voltage level matched with the back electromotive force of the motor is selected, the problems of high cost, large switching loss and extremely low efficiency exist.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a solve the three-phase half-bridge and probably produce the counter current of irritating when the back electromotive force is far above preceding stage direct current voltage in permanent-magnet machine high-speed operation, arouse the condition that power electronic device or transaxle semiconductor damaged, need avoid reverse current when permanent-magnet machine high-speed operation degree of depth weak magnetic control became invalid, with the restriction of extremely high back electromotive force in the motor side, and designed a three-phase permanent-magnet machine drive circuit.
The utility model discloses a realize through following technical scheme:
a three-phase permanent magnet motor driving circuit comprises a three-phase half-bridge inverter circuit, wherein the three-phase half-bridge inverter circuit is formed by connecting three single-phase half-bridge inverter circuits in parallel, the three-phase half-bridge inverter circuit is also connected with a capacitor in parallel, and the three-phase half-bridge inverter circuit and the capacitor are both supplied with power by a direct current power supply; three-phase lines are led out from the external output end of the three-phase half-bridge inverter circuit, a high-voltage semiconductor device is connected in each phase line of the three-phase lines in series, and the tail ends of the three-phase lines are electrically connected with and drive the three-phase permanent magnet motor.
As a further improvement of the above solution, each of the single-phase half-bridge inverter circuits is formed by connecting an upper arm unit and a lower arm unit in series.
As a further improvement of the above scheme, the upper arm unit and the lower arm unit are both insulated gate bipolar transistors or metal-oxide semiconductor field effect transistors.
As a further improvement of the above scheme, a control method for a three-phase permanent magnet motor driving circuit includes the following conditions:
a. When the three-phase half-bridge inverter circuit normally operates, the back electromotive force of the three-phase permanent magnet motor is still lower than the direct current side under the condition of high-speed operation, the inverter circuit in the three-phase half-bridge inverter circuit is switched at a high speed to meet the control performance, and a high-voltage semiconductor device on a three-phase line is in a normally-on state and does not perform switching action;
b. when the high-speed operation fails and the deep flux weakening control fails, the back electromotive force of the three-phase permanent magnet motor is far higher than the direct current input voltage of the front stage, and at the moment, the high-voltage semiconductor device on the three-phase line is turned off, so that the extremely high back electromotive force is limited on the side of the three-phase permanent magnet motor, and the three-phase half-bridge structure and the front stage loop in the three-phase half-bridge inverter circuit are not influenced;
c. when the control part is powered off or stops working and the three-phase permanent magnet motor is dragged at high speed to run, the high-voltage semiconductor device on the three-phase line is in a turn-off state, and the effect of restraining the damage of the counter potential of the motor to a front-stage loop can be realized.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the utility model is suitable for a rated revolution counter potential is lower, and the highest rotational speed is higher and the counter potential is far above the three-phase permanent-magnet machine of rated revolution counter potential, has solved this motor security and control performance when with the drive of traditional three-phase half-bridge and has had the problem of contradiction.
2. The utility model discloses well three-phase half-bridge inverter circuit can adopt the semiconductor device of the lower voltage level that matches with the direct current side, can reduce cost and volume, still can adopt higher switching frequency simultaneously to satisfy the control performance requirement.
3. The utility model discloses well output series connection part adopts the semiconductor device of the higher voltage level that matches with the highest back emf of motor, in time breaks off when high rotational speed weak magnetism control became invalid, can end the motor back emf at the motor side.
4. The utility model discloses the semiconductor device of well high withstand voltage level does not carry out the switching action when the system normal operating, therefore does not have switching loss.
5. The utility model discloses well drive circuit is at control part stop work, and when the motor was dragged the operation at a high speed, also can realize restraining that the motor back electromotive force caused the effect of destruction to the preceding stage return circuit.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic connection diagram of a three-phase permanent magnet motor driving circuit of the present invention;
fig. 2 is the internal connection schematic diagram of the middle three-phase half-bridge inverter circuit of the present invention.
The three-phase permanent magnet motor comprises a 1-three-phase half-bridge inverter circuit, an 11-single-phase half-bridge inverter circuit, a 111-upper arm unit, a 112-lower arm unit, a 2-capacitor, a 3-three-phase line, a 4-high-voltage semiconductor device and a 5-three-phase permanent magnet motor.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In this application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the invention and its embodiments, and are not intended to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in the present invention can be understood by those of ordinary skill in the art as appropriate.
Furthermore, the terms "mounted," "disposed," "provided," "connected," and "sleeved" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
The present invention will be further described with reference to fig. 1 and 2.
A three-phase permanent magnet motor driving circuit is shown in figure 1 and comprises a three-phase half-bridge inverter circuit 1, wherein the three-phase half-bridge inverter circuit 1 is formed by connecting three single-phase half-bridge inverter circuits 11 in parallel, the three-phase half-bridge inverter circuit 1 is also connected with a capacitor 2 in parallel, and the three-phase half-bridge inverter circuit 1 and the capacitor 2 are both supplied with power by a direct current power supply; three-phase lines 3 are led out from the external output end of the three-phase half-bridge inverter circuit 1, a high-voltage semiconductor device 4 is connected in each phase line of the three-phase lines 3 in series, and the tail ends of the three-phase lines 3 are electrically connected with a three-phase permanent magnet motor 5 and drive the three-phase permanent magnet motor 5.
As shown in fig. 2, each single-phase half-bridge inverter circuit 11 is formed by connecting an upper arm unit 111 and a lower arm unit 112 in series; the upper arm cell 111 and the lower arm cell 112 are both insulated gate bipolar transistors or metal-oxide semiconductor field effect transistors.
A control method of a three-phase permanent magnet motor driving circuit comprises the following conditions:
a. When the three-phase half-bridge inverter circuit operates normally, the three-phase permanent magnet motor 5 is subjected to deep flux weakening control, the counter potential of the three-phase permanent magnet motor is still lower than the direct current side in a high-speed operation state, the inverter circuit in the three-phase half-bridge inverter circuit 1 is switched at a high speed to meet the control performance, and the high-voltage semiconductor device 4 on the three-phase line 3 is in a normally-on state and does not perform switching action;
b. when the high-speed operation fails and the deep flux weakening control fails, the back electromotive force of the three-phase permanent magnet motor 5 is far higher than the front-stage direct current input voltage, and at the moment, the high-voltage semiconductor device 4 on the three-phase line 3 is turned off, so that the extremely high back electromotive force is limited on the side of the three-phase permanent magnet motor 5, and the influence on a three-phase half-bridge structure and a front-stage circuit in the three-phase half-bridge inverter circuit 1 is;
c. when the control part is powered off or stops working and the three-phase permanent magnet motor 5 is dragged at high speed, the high-voltage semiconductor device 4 on the three-phase line 3 is in a turn-off state, and the effect of inhibiting the damage of the counter potential of the motor to a front-stage loop can be realized.
When the utility model is applied, the three-phase half-bridge inverter circuit 1 adopts a semiconductor device with lower withstand voltage matched with direct current input; the high-voltage semiconductor device 4 on the three-phase line 3 adopts a semiconductor device with higher voltage-resistant grade matched with the highest back electromotive force of the three-phase permanent magnet motor; when the back electromotive force of the three-phase permanent magnet motor 5 is far higher than the front-stage direct current input voltage, the semiconductor device with lower voltage grade matched with the direct current bus is continuously used by the three-phase half-bridge inverter circuit 1, so that higher switching frequency can be applied to achieve a control effect; the semiconductor device connected in series in the output loop adopts the semiconductor device with higher voltage level matched with the back electromotive force of the motor, when the motor operates normally at high speed, the part of the semiconductor device is in a normal open state, and only part of conduction loss is lost; when the weak magnetic control failure is detected and the back electromotive force is increased, the motor is timely turned off, so that the situation that the extremely high back electromotive force of the motor reversely flows to a direct current side to cause damage risks to a three-phase half-bridge device or a preceding-stage battery system, other electric equipment and the like is avoided.
Compared with the prior art, the utility model is suitable for a rated revolution counter potential is lower, and the highest rotational speed is higher and the counter potential is far above the three-phase permanent-magnet machine of rated revolution counter potential, has solved this motor security and control performance when using traditional three-phase half-bridge drive and has had the contradictory problem; the three-phase half-bridge inverter circuit can adopt a semiconductor device with a lower voltage grade matched with a direct current side, so that the cost and the volume can be reduced, and simultaneously, a higher switching frequency can be adopted to meet the control performance requirement; the output series part adopts a semiconductor device with a higher voltage grade matched with the highest back electromotive force of the motor, and is timely disconnected when the high-speed weak magnetic control fails, so that the back electromotive force of the motor can be cut off at the motor side; the semiconductor device with high voltage-resistant grade does not perform switching action when the system is in normal operation, so that no switching loss exists; when the control part stops working and the motor is dragged at high speed, the driving circuit can also realize the effect of inhibiting the damage of the counter potential of the motor to the front-stage loop.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (3)
1. The utility model provides a three-phase permanent-magnet machine drive circuit, includes three-phase half-bridge inverter circuit (1), its characterized in that: the three-phase half-bridge inverter circuit (1) is formed by connecting three single-phase half-bridge inverter circuits (11) in parallel, the three-phase half-bridge inverter circuit (1) is also connected with a capacitor (2) in parallel, and the three-phase half-bridge inverter circuit (1) and the capacitor (2) are both supplied with power by a direct current power supply; three-phase line (3) have been drawn forth to the outside output of three-phase half-bridge inverter circuit (1), just all establish ties in every phase line in three-phase line (3) and have a high-voltage semiconductor device (4), the end of three-phase line (3) all with three-phase permanent-magnet machine (5) electric connection and drive three-phase permanent-magnet machine (5).
2. The drive circuit of a three-phase permanent magnet motor according to claim 1, wherein: each single-phase half-bridge inverter circuit (11) is formed by connecting an upper arm unit (111) and a lower arm unit (112) in series.
3. The drive circuit of a three-phase permanent magnet motor according to claim 2, wherein: the upper arm unit (111) and the lower arm unit (112) are both insulated gate bipolar transistors or metal-oxide semiconductor field effect transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022414819.6U CN213661499U (en) | 2020-10-27 | 2020-10-27 | Three-phase permanent magnet motor drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022414819.6U CN213661499U (en) | 2020-10-27 | 2020-10-27 | Three-phase permanent magnet motor drive circuit |
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| CN213661499U true CN213661499U (en) | 2021-07-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112367004A (en) * | 2020-10-27 | 2021-02-12 | 枞阳盛控新能源科技有限公司 | Three-phase permanent magnet motor driving circuit and control method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112367004A (en) * | 2020-10-27 | 2021-02-12 | 枞阳盛控新能源科技有限公司 | Three-phase permanent magnet motor driving circuit and control method |
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Effective date of registration: 20221207 Address after: Room 401, 4th floor, Jincheng Science and Technology Building, 69 Jinye Road, Xi'an High-tech Zone, Shaanxi Province Patentee after: XI'AN TSINGTECH NEW ENERGY TECHNOLOGY Co.,Ltd. Address before: Zongyang Economic Development Zone, Zongyang County, Tongling City, Anhui Province Patentee before: Zongyang shengkong New Energy Technology Co.,Ltd. |