CN213600826U - Device for testing performance parameters of semiconductor material under vacuum condition - Google Patents
Device for testing performance parameters of semiconductor material under vacuum condition Download PDFInfo
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- CN213600826U CN213600826U CN202022674917.3U CN202022674917U CN213600826U CN 213600826 U CN213600826 U CN 213600826U CN 202022674917 U CN202022674917 U CN 202022674917U CN 213600826 U CN213600826 U CN 213600826U
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Abstract
The utility model provides a performance parameter testing arrangement of semiconductor material under vacuum condition, include: base, casing and sample testing arrangement, the casing is located on the base, the bottom of casing with pedestal connection, sample testing arrangement is located the base with between the casing, this device can test semiconductor material under the vacuum condition to reduce measuring error, improve the test accuracy degree, reach convenient to use, easy operation, reduce cost's effect.
Description
Technical Field
The utility model relates to a semiconductor material tests technical field, in particular to semiconductor material's performance parameter testing arrangement under vacuum condition.
Background
With the rapid development of semiconductor refrigeration technology, the semiconductor refrigeration technology is widely applied and accepted, and currently, the improvement of the performance parameters of semiconductor materials becomes a key development direction, and accordingly, a testing device capable of accurately measuring the performance parameters of semiconductor materials is required. The traditional measurement method has some problems, such as the influence of the ambient temperature, the incapability of realizing automatic measurement and the like.
SUMMERY OF THE UTILITY MODEL
The utility model provides a performance parameter testing arrangement of semiconductor material under vacuum condition for solve the external environment and produce the condition of influence to the measurement of semiconductor material performance parameter.
For this reason, the technical scheme who adopts makes, the utility model discloses a performance parameter testing arrangement of semiconductor material under vacuum condition, include: the shell is located on the base, the bottom of the shell is connected with the base, and the sample piece testing device is located between the base and the shell.
Preferably, the housing locking device further comprises:
the first support rod is vertically positioned above the base and positioned on one side of the shell, one end of the first support rod is connected with the top of the base, and the other end of the first support rod is in threaded connection with a bolt; the first support rod and the bolt are symmetrically provided with another group of first support rod and bolt relative to the center of the shell;
the limiting piece is horizontally arranged above the shell, and two ends of the limiting piece are penetrated by the two bolts respectively.
Preferably, the sample testing apparatus includes:
the protective shell is positioned in the shell, a plurality of supporting brackets are vertically arranged at the bottom of the protective shell, one end of each supporting bracket is connected with the bottom of the protective shell, and the other end of each supporting bracket is connected with the top of the base;
the first heating piece is horizontally positioned above the protective shell, and is connected with the top of the protective shell;
the second heating piece is horizontally positioned below the protective shell, and is connected with the bottom of the protective shell;
the shielding shell is positioned in the protective shell, and the right side of the shielding shell is connected with the inner wall of the right side of the protective shell;
the first heating furnace is positioned on the left side of the shielding shell, and the first heating furnace is connected with the left wall of the shielding shell;
the screw rod is horizontally positioned in the shell, one end of the screw rod sequentially penetrates through the left wall of the protective shell and one side of the first heating furnace and one side of the second heating furnace to be rotatably connected, and the screw rod is in threaded connection with the left wall of the protective shell;
the first heating furnace and the second heating furnace are internally provided with second thermocouples for feeding back temperature and voltage signals;
the second thermocouple is arranged in the shielding shell and arranged at one end of the supporting rod, and the other end of the supporting rod is connected with the top of the base.
Preferably, one side of the base is connected with a measurement control panel, and the other side of the base is connected with a vacuum pumping pump.
Preferably, a silica gel sealing gasket is arranged between the shell and the sample piece testing device.
Preferably, a glass sleeve is arranged on the second thermocouple.
Preferably, one end of the screw rod, which is far away from the second heating furnace, is provided with a handle.
Preferably, the surface of the handle is provided with anti-skid lines.
The utility model discloses technical scheme has following advantage: the utility model provides a performance parameter testing arrangement of semiconductor material under vacuum condition, include: base, casing and sample testing arrangement, the casing is located on the base, the bottom of casing with pedestal connection, sample testing arrangement is located the base with between the casing, this device can test semiconductor material under the vacuum condition to reduce measuring error, improve the test accuracy degree, reach convenient to use, easy operation, reduce cost's effect.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and examples.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a top view of the present invention;
FIG. 3 is a schematic structural diagram of a sample testing apparatus.
The device comprises a base 1, a shell 2, a first supporting rod 3, a bolt 4, a limiting piece 5, a protective shell 6, a supporting bracket 7, a first heating piece 8, a second heating piece 9, a shielding shell 10, a first heating furnace 12, a screw 13, a second heating furnace 14, a second thermocouple 15, a measurement control panel 16, a vacuumizing pump 17, a handle 18 and a supporting rod 19.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are presented herein only to illustrate and explain the present invention, and not to limit the present invention.
As shown in fig. 1-3, the embodiment of the present invention provides a device for testing performance parameters of semiconductor material under vacuum condition, including: base 1, casing 2 and appearance testing arrangement, casing 2 is located on the base 1, the bottom of casing 2 with base 1 is connected, appearance testing arrangement is located base 1 with between the casing 2.
Still include casing locking device, casing locking device includes:
the first supporting rod 3 is vertically positioned above the base 1 and positioned on one side of the shell 2, one end of the first supporting rod 3 is connected with the top of the base 1, and the other end of the first supporting rod 3 is in threaded connection with a bolt 4; the first support rod 3 and the bolt 4 are symmetrically provided with another group of first support rod 3 and bolt 4 about the center of the shell 2;
the limiting piece 5 is horizontally arranged above the shell 2, and two ends of the limiting piece 5 are penetrated by the two bolts 4 respectively.
The sample test device includes:
the protective shell 6 is positioned in the shell 2, a plurality of supporting brackets 7 are vertically arranged at the bottom of the protective shell 6, one end of each supporting bracket 7 is connected with the bottom of the protective shell 6, and the other end of each supporting bracket 7 is connected with the top of the base 1;
the first heating sheet 8 is horizontally arranged above the protective shell 6, and the first heating sheet 8 is connected with the top of the protective shell 6;
the second heating sheet 9 is horizontally arranged below the protective shell 6, and the second heating sheet 9 is connected with the bottom of the protective shell 6;
the shielding shell 10 is positioned inside the protective shell 6, and the right side of the shielding shell 10 is connected with the inner wall of the right side of the protective shell 6;
a first heating furnace 12, wherein the first heating furnace 12 is positioned at the left side of the shielding shell 10, and the first heating furnace 12 is connected with the left wall of the shielding shell 10;
the screw 13 is horizontally positioned in the shell 2, one end of the screw 13 sequentially penetrates through the left wall of the protective shell 6 and one side of the first heating furnace 12 and one side of the second heating furnace 14 to be rotatably connected, and the screw 13 is in threaded connection with the left wall of the protective shell 6;
a first thermocouple for feeding back temperature and voltage signals is arranged in each of the first heating furnace 12 and the second heating furnace 14;
and the second thermocouple 15 is positioned in the shielding shell 10, the second thermocouple 15 is arranged at one end of a supporting rod 19, and the other end of the supporting rod 19 is connected with the top of the base 1.
One side of the base 1 is connected with a measurement control panel 16, and the other side of the base 1 is connected with a vacuum pumping pump 17.
The working principle and the beneficial effects of the technical scheme are as follows: firstly, the shell 2 is covered on a sample piece testing device, the limiting piece 5 is connected with the first supporting rod 3 through the bolt 4, the shell 2 is locked at the top of the base 1 through the limiting piece 5, the measurement control panel 16 is connected with the sample piece testing device, and the vacuum pumping pump 17 is connected with a sample piece testing unit. The staff opens the evacuation pump 17 and evacuates to ensure that the vacuum degree meets the condition below 1 Pa. After the worker programs through the measuring control panel, the working sequence of each electric device can be completely controlled.
Firstly, electroplating the cross section of a sample material, adding a plating layer for enhancing the conductivity, rotating a screw 13 to clamp the sample to be tested, starting a first heating sheet 8 and a second heating sheet 9 on a protective shell 6, and creating an environment required by testing for the temperature required by heating the protective shell 6 through the first heating sheet 8 and the second heating sheet 9; then, starting the first heating furnace 12, and creating a temperature gradient for the shielding shell 10 through the first heating furnace 12; then the second heating furnace 14 is started to create a temperature gradient for the material to be measured by heating; then, the temperature is kept constant, after the temperature is stabilized, the temperature difference value and the voltage signal of the middle section of the sample piece to be measured are collected by the measurement control panel 16, the temperature difference electromotive force alpha value is calculated, the heating power of the second heating furnace 14 is collected by the measurement control panel 16, the material thermal conductivity K value is calculated by combining the sample piece cross section area and the sampling point distance which are input into the measurement control panel 16 in advance, a current value is input and output by the current input device, the material electrical conductivity sigma value is calculated by combining the temperature difference value of the middle section of the sample piece to be measured and the sample piece cross section area and the sampling point distance, and finally the Z value and the ZT value of.
The shielding case can generate a temperature gradient similar to that of the protective case through the heating furnace, and heat radiation between the shielding case and the protective case can be reduced.
The measurement control panel 16 is added with an automatic control program, so that the automatic operation of the test can be realized.
In one embodiment, a silicone gasket is disposed between the housing 2 and the sample testing device.
The working principle and the beneficial effects of the technical scheme are as follows: the sealing gasket can effectively seal the inner space to prevent air leakage in the vacuumizing process.
In one embodiment, a glass sleeve is provided over the second thermocouple 15.
The working principle and the beneficial effects of the technical scheme are as follows: preventing short circuits and breaking of the second thermocouple 15.
In one embodiment, a handle 18 is provided at an end of the screw 13 remote from the second heating furnace 14.
The working principle and the beneficial effects of the technical scheme are as follows: the screw 13 is convenient for workers to use.
In one embodiment, the surface of the handle 18 is provided with non-slip threads.
The working principle and the beneficial effects of the technical scheme are as follows: the handle 18 is convenient for the staff to use.
It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (8)
1. Device for testing the performance parameters of semiconductor materials under vacuum conditions, characterized in that it comprises: base (1), casing (2) and appearance testing arrangement, casing (2) are located on base (1), the bottom of casing (2) with base (1) is connected, appearance testing arrangement is located base (1) with between casing (2).
2. The apparatus for testing the performance parameters of semiconductor materials under vacuum conditions as claimed in claim 1, further comprising a housing locking device, said housing locking device comprising:
the first supporting rod (3) is vertically positioned above the base (1) and positioned on one side of the shell (2), one end of the first supporting rod (3) is connected with the top of the base (1), and the other end of the first supporting rod (3) is in threaded connection with a bolt (4); the first support rod (3) and the bolt (4) are symmetrically provided with another group of first support rod (3) and bolt (4) relative to the center of the shell (2);
the limiting piece (5), the limiting piece (5) is horizontally arranged above the shell (2), and two ends of the limiting piece (5) are respectively penetrated by the two bolts (4).
3. The apparatus for testing the performance parameters of semiconductor materials under vacuum conditions as claimed in claim 1, wherein the sample testing apparatus comprises:
the protective shell (6) is positioned in the shell (2), a plurality of supporting brackets (7) are vertically arranged at the bottom of the protective shell (6), one end of each supporting bracket (7) is connected with the bottom of the protective shell (6), and the other end of each supporting bracket (7) is connected with the top of the base (1);
the first heating sheet (8), the first heating sheet (8) is horizontally positioned above the protective shell (6), and the first heating sheet (8) is connected with the top of the protective shell (6);
the second heating sheet (9), the second heating sheet (9) is horizontally positioned below the protective shell (6), and the second heating sheet (9) is connected with the bottom of the protective shell (6);
the shielding shell (10) is positioned inside the protective shell (6), and the right side of the shielding shell (10) is connected with the inner wall of the right side of the protective shell (6);
the first heating furnace (12), the first heating furnace (12) is positioned at the left side of the shielding shell (10), and the first heating furnace (12) is connected with the left wall of the shielding shell (10);
the screw (13) is horizontally positioned in the shell (2), one end of the screw (13) sequentially penetrates through the left wall of the protective shell (6) and one side of the first heating furnace (12) and one side of the second heating furnace (14) to be rotatably connected, and the screw (13) is in threaded connection with the left wall of the protective shell (6);
first thermocouples for feeding back temperature and voltage signals are arranged in the first heating furnace (12) and the second heating furnace (14);
the second thermocouple (15), second thermocouple (15) are located shielding shell (10), second thermocouple (15) set up the one end at bracing piece (19), the other end of bracing piece (19) with the top of base (1) is connected.
4. The apparatus for testing the performance parameters of semiconductor materials under vacuum condition as claimed in claim 1, wherein one side of the base (1) is connected with a measurement control panel (16), and the other side of the base (1) is connected with a vacuum pump (17).
5. The device for testing the performance parameters of the semiconductor material under the vacuum condition as claimed in claim 1, wherein a silicone gasket is arranged between the shell (2) and the sample testing device.
6. The apparatus for testing the performance parameters of semiconductor materials under vacuum conditions according to claim 3, characterized in that the second thermocouple (15) is provided with a glass sleeve.
7. The apparatus for testing the performance parameters of semiconductor materials under vacuum conditions according to claim 3, wherein the end of the screw (13) away from the second heating furnace (14) is provided with a handle (18).
8. The device for testing the performance parameters of the semiconductor material under the vacuum condition as recited in claim 7, characterized in that the surface of the handle (18) is provided with anti-skid lines.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022674917.3U CN213600826U (en) | 2020-11-18 | 2020-11-18 | Device for testing performance parameters of semiconductor material under vacuum condition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022674917.3U CN213600826U (en) | 2020-11-18 | 2020-11-18 | Device for testing performance parameters of semiconductor material under vacuum condition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213600826U true CN213600826U (en) | 2021-07-02 |
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ID=76596373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022674917.3U Active CN213600826U (en) | 2020-11-18 | 2020-11-18 | Device for testing performance parameters of semiconductor material under vacuum condition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213600826U (en) |
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2020
- 2020-11-18 CN CN202022674917.3U patent/CN213600826U/en active Active
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