CN213521820U - Resonator and quartz wafer thereof - Google Patents

Resonator and quartz wafer thereof Download PDF

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Publication number
CN213521820U
CN213521820U CN202022999626.1U CN202022999626U CN213521820U CN 213521820 U CN213521820 U CN 213521820U CN 202022999626 U CN202022999626 U CN 202022999626U CN 213521820 U CN213521820 U CN 213521820U
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wafer
main body
steps
quartz
wafer main
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李锦雄
曾谭通
黄信兴
陈汉杰
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Yanchuang Technology Huizhou Co ltd
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Yanchuang Technology Huizhou Co ltd
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Abstract

A resonator and quartz wafer thereof, wherein the quartz wafer comprises: a wafer body, at least one layer of first steps, and at least one layer of second steps; a fixing part is arranged on one side of the wafer main body, a plurality of first etching grooves are formed in the fixing part, and a plurality of second etching grooves are formed in the other side of the wafer main body; the first steps are arranged on the geometric center of the first surface of the wafer main body, the volumes of the first steps are different, the geometric centers of the first steps are aligned with each other, and the volume of each first step is gradually reduced along the direction from the position close to the wafer main body to the position far away from the wafer main body; the second step sets up on the geometric centre of the second face of wafer main part, and the volume of each second step is different sets up, and the geometric centre of each second step aligns each other, and the volume of each second step reduces along being close to wafer main part to the direction of keeping away from wafer main part gradually to wafer main part when the vibration to wafer main part, the vibration energy can be concentrated on the geometric centre of wafer main part, reduces the marginal vibration of wafer main part.

Description

Resonator and quartz wafer thereof
Technical Field
The utility model relates to a syntonizer technical field, in particular to syntonizer and quartz wafer thereof.
Background
The quartz crystal resonator is an electronic component generating resonant frequency, comprises a base and a quartz resonance sheet, has the characteristics of stability and good anti-interference performance, and is widely applied to various electronic products. The quartz resonance sheet is formed by cleaning and plating electrodes on a quartz wafer, dispensing on a dispensing platform in a resonator or an oscillator base, placing one end of the quartz resonance sheet on a glue point, and fixing by means of the adhesive force of the glue point.
Most of the existing quartz crystal wafers can be approximately regarded as complete cuboid structures, the frequency of the quartz crystal resonator comes from the vibration of the quartz crystal wafers, and the vibration energy of the common quartz crystal wafers is dispersed and difficult to concentrate when the quartz crystal wafers vibrate.
SUMMERY OF THE UTILITY MODEL
Based on this, there is a need for a quartz wafer.
The utility model provides an above-mentioned technical problem's technical scheme as follows: a quartz wafer, comprising: a wafer body, at least one layer of first steps, and at least one layer of second steps;
a fixing part is arranged on one side of the wafer main body, a plurality of first etching grooves are formed in the fixing part, and a plurality of second etching grooves are formed in the other side of the wafer main body;
the first steps are arranged on the geometric center of the first face of the wafer main body, the volumes of the first steps are different, the geometric centers of the first steps are aligned with each other, and the volume of each first step is gradually reduced along the direction from the position close to the wafer main body to the position far away from the wafer main body;
the second steps are arranged on the geometric center of the second surface of the wafer main body, the volumes of the second steps are different, the geometric centers of the second steps are aligned with each other, and the volume of each second step is gradually reduced along the direction from the position close to the wafer main body to the position far away from the wafer main body;
the first surface of the wafer main body and the second surface of the wafer main body are arranged oppositely.
In one embodiment, the thickness of the first step is 2 um-3 um, and the thickness of the second step is 2 um-3 um.
In one embodiment, the cross-sectional shape of the first step is circular or square, and the cross-sectional shape of the second step is circular or square.
In one embodiment, the wafer comprises a wafer body, a first electrode plate and a second electrode plate, wherein the first electrode plate is arranged on one side, opposite to the wafer body, of the first step at the farthest end of the wafer body, and the second electrode plate is arranged on one side, opposite to the wafer body, of the second step at the farthest end of the wafer body.
In one embodiment, the first electrode plate is made of one of gold, silver and aluminum, and the second electrode plate is made of one of gold, silver and aluminum.
In one embodiment, the first etching groove has a V-shaped or circular arc-shaped cross section, and the second etching groove has a V-shaped or circular arc-shaped cross section.
In one embodiment, the number of the first etching grooves is greater than the number of the second etching grooves.
In one embodiment, the fixing portion is provided with at least one fixing hole.
In one embodiment, the number of the fixing holes is two, and the two fixing holes are oppositely arranged on the fixing part.
A resonator comprising a quartz wafer as described in any one of the above embodiments.
The utility model has the advantages that: the utility model provides a quartz wafer, through be provided with at least one deck volume not of uniform size on the geometric centre of the first face of wafer main part the first step, each the first step from the direction from near to far away from the wafer main part, arrange the connection according to the order from big to little of volume in proper order, be provided with at least one deck volume not of uniform size on the geometric centre of the second face of wafer main part the second step, each the second step from the direction from near to far away from the wafer main part, arrange the connection according to the order from big to little of volume in proper order, make the thickness of the geometric centre of wafer main part be greater than the thickness of wafer main part edge, and the both sides of wafer main part are provided with respectively first sculpture groove with the second sculpture groove, thereby the wafer main part can concentrate on the geometric centre of wafer main part vibration energy when the vibration, the edge vibration of the wafer main body is reduced, the frequency stability of the resonator is improved, and meanwhile the yield of products is improved.
Drawings
FIG. 1 is a schematic diagram of a quartz wafer according to one embodiment;
FIG. 2 is a schematic structural diagram of a quartz wafer according to another embodiment.
In the figure, 10, a quartz wafer; 100. a wafer body; 110. a fixed part; 200. a first step; 300. a second step; 410. a first etching groove; 420. a second etching groove; 510. a first electrode sheet; 520. and a second electrode sheet.
Detailed Description
It should be noted that, in the present invention, the embodiments and features of the embodiments may be combined with each other without conflict. The following will combine the drawings of the embodiments of the present invention to further describe the technical solution of the present invention, and the present invention is not limited to the following specific embodiments.
It should be understood that the same or similar reference numerals in the drawings of the embodiments correspond to the same or similar parts. In the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "front", "rear", "left", "right", "top", "bottom", etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the drawings, the description is merely for convenience of description and simplicity of description, but does not indicate or imply that the equipment or components referred to must have specific orientations, be constructed in specific orientations, and be operated, and therefore, the terms describing the positional relationships in the drawings are only used for illustrative purposes and are not to be construed as limitations of the present patent, and those skilled in the art will understand the specific meanings of the terms according to specific situations.
As shown in fig. 1, in one embodiment, a quartz wafer 10 comprises: a wafer body 100, at least one first step 200 and at least one second step 300; a fixing part 110 is arranged on one side of the wafer body 100, a plurality of first etching grooves 410 are arranged on the fixing part 110, and a plurality of second etching grooves 420 are arranged on the other side of the wafer body 100; the first steps 200 are arranged on the geometric center of the first surface of the wafer main body 100, the volumes of the first steps 200 are arranged differently, the geometric centers of the first steps 200 are aligned with each other, and the volume of each first step 200 is gradually reduced along the direction from the wafer main body 100 to the direction away from the wafer main body 100; the second steps 300 are disposed on the geometric center of the second surface of the wafer body 100, the volumes of the second steps 300 are different, the geometric centers of the second steps 300 are aligned with each other, and the volume of the second steps 300 gradually decreases along the direction from the wafer body 100 to the direction away from the wafer body 100; the first side of the wafer body 100 and the second side of the wafer body 100 are disposed opposite to each other.
In this embodiment, when the plurality of first steps 200 are disposed on the geometric center of the first surface of the wafer main body 100, the first steps 200 are sequentially connected in a descending order from the size from the near to the far direction from the wafer main body 100, so that the thickness of the geometric center of the wafer main body 100 is greater than the thickness of the edge of the wafer main body 100; when the plurality of second steps 300 are disposed on the geometric center of the second surface of the wafer body 100, the second steps 300 are sequentially connected from the direction from the near side to the far side from the wafer body 100 in the order from the large volume to the small volume, so that the thickness of the geometric center of the wafer body 100 is greater than the thickness of the edge of the wafer body 100, and thus, when the wafer body 100 vibrates, vibration energy can be concentrated on the geometric center of the wafer body 100, thereby reducing the edge vibration of the wafer body 100.
It should be understood that the frequency of the resonator is derived from the vibration of the quartz wafer 10, the quartz wafer 10 without the chamfered edge has no concentration of energy, the vibration is diffused from the center to the edge, but the edge may affect the vibration, and in addition, when the quartz wafer 10 is fixed on the base, stress may be applied to the surface of the quartz wafer 10, the vibration range of the quartz wafer 10 may be affected, and the condition and frequency of the vibration of the quartz may also be affected, in the present embodiment, by providing a plurality of first etching grooves 410 on one side of the wafer body 100 where the fixing part 110 is provided, and providing a plurality of second etching grooves 420 on the other side of the wafer body 100, the cross-sectional shape of the first etching grooves 410 is V-shaped or circular arc, the cross-sectional shape of the second etching grooves 420 is V-shaped or circular arc, the plurality of first etching grooves 410 and the plurality of second etching grooves 420 can not only block the vibration through their rough surfaces, further, vibration energy is concentrated on the geometric center of the wafer body 100, and the rough surface formed by the plurality of first etching grooves 410 can increase the contact area between a fixing material and the quartz body, for example, the fixing material is conductive silver paste, and the number of the first etching grooves 410 is greater than that of the second etching grooves 420, so that the contact area between the conductive silver paste and the quartz body can be increased, the adhesive force of the conductive silver paste is increased, the quartz wafer 10 can be better fixed on a base, the vibration energy can be concentrated, and the stress influence on the quartz wafer 10 during fixing can be reduced.
In an exemplary embodiment of the invention, the quartz wafer 10 is provided with at least one layer of first steps 200 with different volumes on the geometric center of the first surface of the wafer main body 100, each of the first steps 200 is sequentially connected from the near to the far direction from the wafer main body 100 according to the sequence of the volumes from large to small, at least one layer of second steps 300 with different volumes is provided on the geometric center of the second surface of the wafer main body 100, each of the second steps 300 is sequentially connected from the near to the far direction from the wafer main body 100 according to the sequence of the volumes from large to small, so that the thickness of the geometric center of the wafer main body 100 is greater than the thickness of the edge of the wafer main body 100, and the first etching groove 410 and the second etching groove 420 are respectively provided on both sides of the wafer main body 100, so that when the wafer main body 100 vibrates, the vibration energy can be concentrated on the geometric center of the wafer body 100, reducing the edge vibration of the wafer body 100, improving the frequency stability of the resonator, and improving the yield of the product.
In order to make the energy of the quartz wafer 10 more concentrated, in one embodiment, the thickness of the first step 200 is 2um to 3um, and the thickness of the second step 300 is 2um to 3 um. Specifically, the first step 200 has a first surface and a second surface which are oppositely arranged, the first surface of the first step 200 is arranged in parallel with the second surface, and the first surface of each first step 200 is connected with the second surface of another adjacent first step 200. Correspondingly, the second steps 300 have a first face and a second face which are opposite to each other, the first face of the second step 300 is parallel to the second face, and the first face of each second step 300 is connected to the second face of another adjacent second step 300. When the first steps 200 are stacked in sequence, the geometric centers of the cross sections of the first steps 200 are aligned, and when the second steps 300 are stacked in sequence, the geometric centers of the cross sections of the second steps 300 are aligned, so that the center of gravity of the wafer body 100 is stable, and the wafer body can have a stable vibration frequency during vibration, and the vibration frequency of the quartz wafer 10 is easy to adjust and control.
In this embodiment, the first step 200 and the second step 300 may be formed by first plating chromium layers, gold layers or other metals with high stability on the wafer main body 100 by a vacuum plating method, and then using a dry etching method, in which the components generate ions in a high vacuum environment, directionally impact on the surface of the quartz or the metal, and perform a chemical reaction to generate an etching effect, and etch the surface of the wafer main body 100 or the metal surface to generate a local step, thereby forming the first step 200 and the second step 300. Therefore, the oscillation energy of the crystal is concentrated at the center, so that the influence of the unstable oscillation caused by the unnecessary edge oscillation and the change of the fixed position is reduced.
In order to make the energy of the quartz wafer 10 more concentrated, in one embodiment, the cross-sectional shape of the first step 200 is circular or square, and the cross-sectional shape of the second step 300 is circular or square. Specifically, the cross section of each first step 200 is circular or square, and the cross section of each second step 300 is circular or square, that is, the cross sections of the first step 200 and the second step 300 are axisymmetric, and the cross sections of the first step 200 and the second step 300 are axisymmetric, so that the mass distribution of the first step 200 and the second step 300 can be more uniform, and further concentration of energy is facilitated.
As shown in fig. 2, in order to enable the quartz wafer 10 to generate the piezoelectric effect, in one embodiment, the quartz wafer further includes a first electrode plate 510 and a second electrode plate 520, the first electrode plate 510 is disposed on a side of the first step 200 farthest from the wafer main body 100, which faces away from the wafer main body 100, and the second electrode plate 520 is disposed on a side of the second step 300 farthest from the wafer main body 100, which faces away from the wafer main body 100. Specifically, the first electrode sheet 510 is disposed on the outermost layer of the first surface of the wafer body 100, the second electrode sheet 520 is disposed on the outermost layer of the second surface of the wafer body 100, and the fixing portion 110 is connected to a base using conductive silver paste, so that the quartz wafer 10 is fixed to the base. Further, in order to enable the first electrode sheet 510 and the second electrode sheet 520 to have good conductive efficiency, the first electrode sheet 510 is made of one of gold, silver and aluminum sheets, and the second electrode sheet 520 is made of one of gold, silver and aluminum sheets.
In order to better fix the quartz wafer 10, in one embodiment, the fixing portion 110 has at least one fixing hole. Specifically, the fixed orifices is seted up on the fixed part 110, the fixed orifices runs through wafer main part 100 for further increase electrically conductive silver thick liquid with the area of contact of wafer main part 100, electrically conductive silver thick liquid can form the thick liquid post in the fixed orifices, better will quartz wafer 10 fixes on the base. Further, the number of the fixing holes is two, and the two fixing holes are oppositely disposed on the fixing portion 110, so that the quartz wafer 10 can be better fixed.
In one application of the quartz wafer 10, the quartz wafer 10 of the above embodiment is used as a component to be assembled with a base and other components to obtain a resonator.
In one embodiment, a resonator is provided that includes the quartz wafer 10 of any of the embodiments described above. In this embodiment, the resonator further includes a base and a cover plate, the quartz wafer 10 is connected to the base through conductive silver paste, and the cover plate covers the base to separate the quartz wafer 10 from the outside.
It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the present invention, and are not limitations to the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. A quartz wafer, comprising: a wafer body, at least one layer of first steps, and at least one layer of second steps;
a fixing part is arranged on one side of the wafer main body, a plurality of first etching grooves are formed in the fixing part, and a plurality of second etching grooves are formed in the other side of the wafer main body;
the first steps are arranged on the geometric center of the first face of the wafer main body, the volumes of the first steps are different, the geometric centers of the first steps are aligned with each other, and the volume of each first step is gradually reduced along the direction from the position close to the wafer main body to the position far away from the wafer main body;
the second steps are arranged on the geometric center of the second surface of the wafer main body, the volumes of the second steps are different, the geometric centers of the second steps are aligned with each other, and the volume of each second step is gradually reduced along the direction from the position close to the wafer main body to the position far away from the wafer main body;
the first surface of the wafer main body and the second surface of the wafer main body are arranged oppositely.
2. The quartz wafer of claim 1, wherein the thickness of the first step is 2um to 3um, and the thickness of the second step is 2um to 3 um.
3. The quartz wafer of claim 2, wherein the first step has a circular or square cross-sectional shape and the second step has a circular or square cross-sectional shape.
4. The quartz wafer of claim 1, further comprising a first electrode pad disposed on a side of the first step facing away from the wafer body furthest from the wafer body and a second electrode pad disposed on a side of the second step facing away from the wafer body furthest from the wafer body.
5. The quartz wafer of claim 4, wherein the first electrode sheet is made of one of gold, silver and aluminum, and the second electrode sheet is made of one of gold, silver and aluminum.
6. The quartz wafer of claim 1, wherein the first etched grooves have a V-shaped or circular arc-shaped cross-section, and the second etched grooves have a V-shaped or circular arc-shaped cross-section.
7. The quartz wafer of claim 1, wherein the number of first etched grooves is greater than the number of second etched grooves.
8. The quartz wafer of claim 1, wherein the fixing portion defines at least one fixing hole.
9. A quartz wafer according to claim 8, wherein said fixing holes are two in number, and two of said fixing holes are oppositely provided on said fixing portion.
10. A resonator comprising the quartz wafer as claimed in any one of claims 1 to 9.
CN202022999626.1U 2020-12-15 2020-12-15 Resonator and quartz wafer thereof Active CN213521820U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202022999626.1U CN213521820U (en) 2020-12-15 2020-12-15 Resonator and quartz wafer thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202022999626.1U CN213521820U (en) 2020-12-15 2020-12-15 Resonator and quartz wafer thereof

Publications (1)

Publication Number Publication Date
CN213521820U true CN213521820U (en) 2021-06-22

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Country Link
CN (1) CN213521820U (en)

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