CN213520696U - Semiconductor laser power driver - Google Patents
Semiconductor laser power driver Download PDFInfo
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- CN213520696U CN213520696U CN202022853944.7U CN202022853944U CN213520696U CN 213520696 U CN213520696 U CN 213520696U CN 202022853944 U CN202022853944 U CN 202022853944U CN 213520696 U CN213520696 U CN 213520696U
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Abstract
The utility model belongs to the laser instrument field, in particular to semiconductor laser power driver, including the vary voltage rectifier module that connects gradually, voltage stabilizing module, start module, semiconductor laser, first filter network, second filter network, still be connected with drive module on the semiconductor laser, the driver is still including power control module, power control module includes a photosensitive diode, photosensitive diode and semiconductor laser set up to generate feedback current signal together and turn into driving voltage through power control module, and driving voltage makes semiconductor laser normally work through drive module. This is novel through reference voltage and laser instrument feedback signal advance once enlarge the back with standard operating voltage stack dynamic adjustment semiconductor laser's operating power, reduce the fluctuation that the during operation produced because of the temperature, guaranteed the job stabilization when other power equipment are near and arbitrary switching power supply simultaneously.
Description
Technical Field
The utility model belongs to the laser drive field, in particular to semiconductor laser power driver.
Background
The semiconductor laser has the advantages of small volume, good monochromaticity, strong directivity, high light power utilization rate and the like, and is widely applied to the fields of optical fiber communication, instrument measurement and the like due to low working voltage requirement and simple working circuit. However, the light emitting power of the semiconductor laser changes frequently along with the change of the working environment, and the working environment temperature and the working electromagnetic environment cause the light power of the semiconductor laser to fluctuate, even cause self damage, so that the equipment cannot work normally.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a: aiming at the existing problems, the power driver of the semiconductor laser is provided, which can carry out feedback compensation through the working state of the semiconductor laser and meet various working environments.
The utility model adopts the technical scheme as follows:
the utility model provides a semiconductor laser power driver, including the vary voltage rectifier module that connects gradually, the voltage stabilizing module, the start module, semiconductor laser, be provided with first filter network between voltage stabilizing module and start module, be provided with the second filter network between start module and semiconductor laser, still be connected with drive module on the semiconductor laser, the driver is still including power control module, power control module includes a photosensitive diode, photosensitive diode and semiconductor laser set up to generate feedback current signal and pass through power control module and turn into driving voltage together, driving voltage makes semiconductor laser normal work through drive module.
Further, the power control module comprises two instrumentation amplifiers U2 and U3, an input pin 2 of the amplifier U2 is connected to the anode of the photodiode D6, the anode of the diode D6 is grounded through a resistor R6, a resistor R6 converts a current signal induced and generated by the photodiode D6 into a voltage signal and inputs the voltage signal to the amplifier U2, a starting voltage pin 5 of the amplifier U2 is connected to an adjusting end of a variable resistor R3, the variable resistor R3 is arranged between a working voltage and a ground signal and used for generating a starting working voltage, a reference voltage pin 3 of the amplifier U2 is connected to an adjusting end of a variable resistor R2, and the variable resistor R3 is arranged between the working voltage and the ground signal and used for generating a reference voltage; the amplifier U2 generates a power control voltage by a reference voltage and a collected voltage signal through a feedback amplifying resistor R5 between a pin 1 and a pin 8, the power control signal is connected to a pin 3 of the amplifier U3 through a resistor R7, a pin 5 of the amplifier U3 is connected with an adjusting end of a variable resistor R4, the variable resistor R4 is arranged between a working voltage and a grounding signal and used for generating a rated power working voltage of a laser, and the amplifier U3 adds the power control voltage and the rated power working voltage and transmits the added voltage to a driving module.
Further, the driving module includes a PNP transistor Q2, the base of the transistor Q2 receives the power control module signal through a resistor R9, and the resistor R9 makes the transistor Q2 operate in the linear amplification region. The emitter of Q2 is grounded and its collector drives the semiconductor laser through a current limiting resistor R8.
Further, the transformation and rectification module comprises a transformer T1 connected with a mains supply, an output end of the transformer T1 is connected with a rectifier bridge D1, an input end of the transformer T1 is provided with a transient suppression diode D1, and an output end of the rectifier bridge D1 is provided with a transient suppression diode D2.
Further, the voltage stabilizing module comprises a voltage stabilizing chip U1, an input end of which is grounded through a polar capacitor C5 and a capacitor C8, and an output end of which is provided with a transient suppression diode D3.
Further, the starting module comprises a Darlington transistor Q1, wherein the base of the Darlington transistor Q1 receives signals through a resistor R1, the base of the Darlington transistor Q1 is grounded through a polar capacitor C11, and the emitter and the collector of the Darlington transistor Q are connected and output signals.
Further, the amplifying chip U2 and the amplifying chip U3 in the power control module adopt the AD 623.
Further, the voltage stabilizing chip U1 adopts LM 7805.
Furthermore, the first filter network and the second filter network adopt a pi-type filter structure.
To sum up, owing to adopted above-mentioned technical scheme, the beneficial effects of the utility model are that:
the standard working voltage of the laser is generated through the variable resistor R4, the reference voltage generated by the variable resistor R3 and the laser feedback signal are superposed with the standard working voltage after being amplified for the first time to dynamically adjust the working power of the semiconductor laser, the fluctuation of the semiconductor laser caused by temperature during working is reduced, and meanwhile, the transient diode and various filter structures ensure the stable working of the semiconductor laser near other power equipment and during any switching power supply.
Drawings
FIG. 1 is a schematic diagram of the present invention;
fig. 2 is a schematic circuit diagram of the transformer rectifier module, the voltage stabilizer module, the starting module, the first filter network and the second filter network of the present invention;
fig. 3 is a schematic circuit diagram of the semiconductor laser, the driving module, and the power control module of the present invention.
Detailed Description
All features disclosed in this specification may be combined in any combination, except features and/or steps that are mutually exclusive.
As shown in figure 1, a semiconductor laser power driver, including the vary voltage rectifier module that connects gradually, the voltage stabilizing module, the start module, semiconductor laser, be provided with first filter network between voltage stabilizing module and the start module, be provided with the second filter network between start module and semiconductor laser, still be connected with drive module on the semiconductor laser, the driver is still including power control module, power control module includes a photodiode, photodiode and semiconductor laser set up to generate feedback current signal together and pass through power control module and turn into driving voltage, driving voltage makes semiconductor laser normal work through drive module.
As shown in fig. 2, the transforming and rectifying module includes a transformer T1 connected to the utility power, an output terminal of the transformer T1 is connected to a rectifier bridge D1, an input terminal of the transformer T1 is provided with a transient suppression diode D1, and an output terminal of the rectifier bridge D1 is provided with a transient suppression diode D2. The voltage stabilizing module comprises a voltage stabilizing chip U1, the input end of the voltage stabilizing chip U1 is grounded through a polar capacitor C5 and a capacitor C8, and the output end of the voltage stabilizing module is provided with a transient suppression diode D3. Transient diodes are used to suppress spike interference and surge voltages. The starting module comprises a Darlington transistor Q1, wherein the base electrode of the Darlington transistor Q1 receives a signal through a resistor R1, the base electrode of the Darlington transistor Q1 is grounded through a polar capacitor C11, and the emitter electrode and the collector electrode of the Darlington transistor Q1 are connected and output signals. The resistor R1 and the capacitor C11 form a charging circuit, and the semiconductor laser is slowly powered through gradual conduction of two triodes in the Darlington tube Q1, so that the impact of sudden power supply on the semiconductor laser is relieved. The voltage stabilizing chip U1 adopts LM 7805. The first filter network and the second filter network adopt a pi-type filter structure. The first filter network comprises a polar capacitor C6, a polar capacitor C7, a capacitor C9, a capacitor C10 and an inductor L1, the second filter network comprises a polar capacitor C1, a polar capacitor C2, a capacitor C3, a capacitor C4 and an inductor L2, and a transient diode D2 is further arranged at the output end of the second filter network.
As shown in fig. 3, the power control module includes two instrumentation amplifiers U2 and U3, an input pin 2 of the amplifier U2 is connected to the anode of the photodiode D6, the anode of the diode D6 is grounded through a resistor R6, the resistor R6 converts a current signal induced and generated by the photodiode D6 into a voltage signal and inputs the voltage signal to the amplifier U2, a starting voltage pin 5 of the amplifier U2 is connected to an adjustment terminal of the variable resistor R3, the variable resistor R3 is disposed between an operating voltage and a ground signal for generating a starting operating voltage, a reference voltage pin 3 of the amplifier U2 is connected to an adjustment terminal of the variable resistor R2, and the variable resistor R3 is disposed between the operating voltage and the ground signal for generating a reference voltage; the amplifier U2 generates a power control voltage by a reference voltage and a collected voltage signal through a feedback amplifying resistor R5 between a pin 1 and a pin 8, the power control signal is connected to a pin 3 of the amplifier U3 through a resistor R7, a pin 5 of the amplifier U3 is connected with an adjusting end of a variable resistor R4, the variable resistor R4 is arranged between a working voltage and a grounding signal and used for generating a rated power working voltage of a laser, and the amplifier U3 adds the power control voltage and the rated power working voltage and transmits the added voltage to a driving module. The driving module comprises a PNP triode Q2, the base of the triode Q2 receives the power control module signal through a resistor R9, and a resistor R9 enables the triode Q2 to work in a linear amplification region. The emitter of Q2 is grounded and its collector drives the semiconductor laser through a current limiting resistor R8. The AD623 is adopted by the amplifying chip U2 and the amplifying chip U3 in the power control module.
Claims (9)
1. The utility model provides a semiconductor laser power driver, its characterized in that, is including the vary voltage rectifier module, voltage stabilizing module, starting module, the semiconductor laser that connect gradually, voltage stabilizing module and starting are provided with first filter network between the module, are provided with the second filter network between starting module and semiconductor laser, still are connected with drive module on the semiconductor laser, the driver is still including power control module, and power control module includes a photodiode, and photodiode and semiconductor laser set up to generate feedback current signal together and turn into driving voltage through power control module, and driving voltage makes the semiconductor laser normally work through drive module.
2. The power driver of a semiconductor laser as claimed in claim 1, wherein the power control module comprises two instrumentation amplifiers U2 and U3, the input pin 2 of the amplifier U2 is connected to the anode of the photodiode D6, the anode of the diode D6 is grounded through a resistor R6, a resistor R6 converts a current signal induced by the photodiode D6 into a voltage signal to be input to the amplifier U2, the starting voltage pin 5 of the amplifier U2 is connected to the adjusting terminal of a variable resistor R3, a variable resistor R3 is arranged between the working voltage and the ground signal for generating the starting working voltage, the reference voltage pin 3 of the amplifier U2 is connected to the adjusting terminal of the variable resistor R2, and a variable resistor R3 is arranged between the working voltage and the ground signal for generating the reference voltage; the amplifier U2 generates a power control voltage by a reference voltage and a collected voltage signal through a feedback amplifying resistor R5 between a pin 1 and a pin 8, the power control signal is connected to a pin 3 of the amplifier U3 through a resistor R7, a pin 5 of the amplifier U3 is connected with an adjusting end of a variable resistor R4, the variable resistor R4 is arranged between a working voltage and a grounding signal and used for generating a rated power working voltage of a laser, and the amplifier U3 adds the power control voltage and the rated power working voltage and transmits the added voltage to a driving module.
3. A semiconductor laser power driver as claimed in claim 1 wherein the driving module comprises a PNP transistor Q2, the base of transistor Q2 receiving the power control module signal through resistor R9, its emitter connected to ground, and its collector driving the semiconductor laser through current limiting resistor R8.
4. The power driver of a semiconductor laser as claimed in claim 1, wherein the transforming and rectifying module comprises a transformer T1 connected to the mains supply, an output terminal of the transformer T1 is connected to a rectifying bridge D1, an input terminal of the transformer T1 is provided with a transient suppression diode D1, and an output terminal of the rectifying bridge D1 is provided with a transient suppression diode D2.
5. The power driver of a semiconductor laser as claimed in claim 1, wherein the voltage regulation module comprises a voltage regulation chip U1, the input terminal of which is grounded through a polarity capacitor C5 and a capacitor C8, and the output terminal of which is provided with a transient suppression diode D3.
6. A semiconductor laser power driver as claimed in claim 1, wherein said start-up module comprises a darlington transistor Q1, whose base receives signal through a resistor R1, whose base is grounded through a polarity capacitor C11, whose emitter and collector are connected and output signal.
7. The power driver of a semiconductor laser as claimed in claim 2, wherein the power control module employs AD623 for the amplification chip U2 and the amplification chip U3.
8. The power driver of a semiconductor laser as claimed in claim 5, wherein said regulator chip U1 is LM 7805.
9. A semiconductor laser power driver as claimed in claim 1, wherein the first and second filter networks employ pi-type filter structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022853944.7U CN213520696U (en) | 2020-12-01 | 2020-12-01 | Semiconductor laser power driver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022853944.7U CN213520696U (en) | 2020-12-01 | 2020-12-01 | Semiconductor laser power driver |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213520696U true CN213520696U (en) | 2021-06-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022853944.7U Active CN213520696U (en) | 2020-12-01 | 2020-12-01 | Semiconductor laser power driver |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213520696U (en) |
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2020
- 2020-12-01 CN CN202022853944.7U patent/CN213520696U/en active Active
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