CN111030452A - Driving device of high-power full SiC-MOSFET module - Google Patents
Driving device of high-power full SiC-MOSFET module Download PDFInfo
- Publication number
- CN111030452A CN111030452A CN201911314490.1A CN201911314490A CN111030452A CN 111030452 A CN111030452 A CN 111030452A CN 201911314490 A CN201911314490 A CN 201911314490A CN 111030452 A CN111030452 A CN 111030452A
- Authority
- CN
- China
- Prior art keywords
- power supply
- voltage
- power
- circuit
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The invention relates to a driving device of a power device, in particular to a driving device of a high-power full SiC-MOSFET module. The problem that the driving device of the existing full SiC-MOSFET module cannot meet the driving requirement of the high-power full SiC-MOSFET module due to the limitation of performance and structure is solved. The driving device comprises a signal input circuit, a fault feedback circuit, a power supply conversion circuit and a power supply conditioning circuit; the power supply conversion circuit comprises a DC-DC power supply module with overcurrent protection, the input voltage of the DC-DC power supply module is 4-40V, the output voltage is 15V +/-3%, and the ripple factor is less than 5%; the power supply conditioning circuit comprises a voltage regulating circuit, so that a driving power supply with adjustable output voltage is output; the driving output signal is pressed on the full SiC-MOSFET module through the connector. The invention can drive full SiC-MOSFET modules with voltage levels of 1700V and below.
Description
Technical Field
The invention relates to a driving device of a power device, in particular to a driving device of a high-power full SiC-MOSFET module.
Background
Most of electric energy in the power energy conversion system is consumed in power conversion and power driving, and the requirement for efficient power energy conversion urges the generation of an all-SiC-MOSFET module in the face of the current situation of increasingly tense energy sources. The high-efficiency energy-saving device has the characteristics of high temperature resistance, high pressure resistance, high frequency and low loss, and can achieve the aims of high efficiency and further energy consumption reduction.
At present, a driving device of an existing full SiC-MOSFET module is mainly driven by a small power, and as shown in fig. 1, the driving device mainly includes a signal input circuit, a fault feedback circuit, a power conversion circuit, a primary side protection circuit, an isolation circuit, a short-circuit protection circuit, an overvoltage protection circuit, a power amplification circuit, and a power conditioning circuit. Limited by performance and structure, the existing driving device can not meet the requirements of a high-power full SiC-MOSFET module, and is mainly embodied as follows:
1) power input of power conversion circuit is single
Only a single power supply input is supported and the input power supply ripple is required to be small. In practical engineering application, different products provide different input voltages, the quality of the power supply is poor, and the power supply conversion circuit cannot meet multiple requirements.
2) Poor compatibility of power supply conditioning circuit
The requirements of full SiC-MOSFET modules with different voltage grades on a driving power supply in the current market are different, the switching-on voltage is 15V-20V, the switching-off voltage is-5V-15V, the combination of various positive and negative voltages is included, the existing power supply conditioning circuit can only provide a power supply with fixed voltage, the compatibility is poor, and the compatibility of a driving device is poor.
3) The interface circuit has poor anti-interference performance
The driving output signals are connected by cables, interference signals are easily introduced in the working process, and the full SiC-MOSFET module is caused to malfunction or even fail.
4) Low primary and secondary side isolation voltage of isolation circuit
The existing driving device is mostly used for driving a low-voltage power device, has low isolation voltage and cannot meet the voltage withstanding requirement of a 1700V voltage-grade full SiC-MOSFET module driving device.
Disclosure of Invention
The invention solves the problem that the existing driving device of the full SiC-MOSFET module cannot meet the requirements of the high-power full SiC-MOSFET module due to the limitation of performance and structure, and provides the driving device of the high-power full SiC-MOSFET module.
The invention is realized by adopting the following technical scheme: the driving device of the high-power full SiC-MOSFET module comprises a signal input circuit, a fault feedback circuit, a power conversion circuit and a power conditioning circuit; the power supply conversion circuit comprises a DC-DC power supply module with overcurrent protection, the input voltage of the DC-DC power supply module is 4-40V, the output voltage is 15V +/-3%, and the ripple factor is less than 5%, so that the stability of a power supply of the driving device is ensured when the driving load is in short circuit; when the quality of the external power supply is poor, the driving device works normally; the applicability of the driving device is ensured when the power supply of an external product is changed.
In order to meet the requirements of full SiC-MOSFET modules of different manufacturers on a driving power supply, for example, the full SiC-MOSFET module of a certain manufacturer A needs to drive the on-off voltage to be + 20V and-5V, and the full SiC-MOSFET module of a certain manufacturer B needs to drive the on-off voltage to be + 15V and-10V. The power supply conditioning circuit comprises a voltage regulating circuit, so that a driving power supply with adjustable output voltage can provide required positive and negative voltage for different full SiC-MOSFET modules, and the on and off of a device can be reliably driven.
The driving output signal is pressed and installed on the full SiC-MOSFET module through the connector, so that a common twisted pair is avoided, the parasitic inductance and capacitance of a loop are reduced, and the anti-interference performance of the driving device is enhanced.
The invention can drive the full SiC-MOSFET module with 1700V and below voltage level, has high compatibility and avoids repeated design; the power supply conditioning circuit can set different driving output voltages, meets the special requirements of full SiC-MOSFET modules of different manufacturers on the driving power supply, is flexible and convenient to use, and solves the technical problems of poor compatibility and reliability of the existing driving device; the problem of single power input of a power supply conversion circuit is solved, the power supply conversion circuit can be suitable for systems with different power supply voltages, the stability of output voltage is ensured, power supply protection is implemented under the condition of overload, and fault amplification is prevented; the problem that the anti-interference capability of the output electric signal is weak is solved; the method lays a solid foundation for the application of the high-power full SiC-MOSFET module in the field of rail transit.
Drawings
FIG. 1 is a schematic block circuit diagram of a drive arrangement for an all SiC-MOSFET module;
fig. 2 is a schematic diagram of a voltage regulating circuit included in the power conditioning circuit of the present invention.
Detailed Description
The driving device of the high-power full SiC-MOSFET module comprises a signal input circuit, a fault feedback circuit, a power conversion circuit and a power conditioning circuit; the power supply conversion circuit comprises a DC-DC power supply module with overcurrent protection, the input voltage of the DC-DC power supply module is 4-40V, the output voltage is 15V +/-3%, and the ripple factor is less than 5%; the power supply conditioning circuit comprises a voltage regulating circuit, so that a driving power supply with adjustable output voltage is output; the driving output signal is pressed on the full SiC-MOSFET module through the connector.
In specific implementation, the signal input circuit, the fault feedback circuit and the power conversion circuit are connected with an external control circuit by adopting an 8-pin WE connector, so that mutual transmission of signals is realized. The input control signal of the signal input circuit and the feedback signal of the fault feedback circuit both adopt differential signals, and the influence of interference signals is reduced to the maximum extent. The fault feedback circuit arranges and amplifies fault signals generated by the driving device, and transmits the fault signals to the control system in a differential mode, and the control system performs corresponding protection actions.
The voltage regulating circuit of the power supply regulating circuit comprises an operational amplifier chip;
the IN-phase input end + IN of the operational amplifier chip is connected with a power supply anode (25V) through a resistor R1, the IN-phase input end + IN of the operational amplifier chip is further connected with a power supply cathode (0V) through an adjustable resistor R4 and an adjustable resistor R5, the IN-phase input end + IN of the operational amplifier chip is further connected with an input voltage positive end K of a voltage stabilizing device Q, an input voltage negative end A of the voltage stabilizing device Q is connected with the power supply cathode (0V), and a voltage reference end REF of the voltage stabilizing device Q is connected with a connection node between the adjustable resistor R4 and the adjustable resistor R5;
a capacitor C1 is connected between the power supply anode (25V) and the power supply cathode (0V);
the inverting input end-IN of the operational amplifier chip is connected with the output end OUT of the operational amplifier chip;
the output end OUT of the operational amplifier chip is connected with one end of a resistor R3, and the other end of the resistor R3 is used as a ground end GND;
the positive power supply end U + of the operational amplifier chip is connected with the positive pole (25V) of the power supply through a resistor R2, and the negative power supply end U-of the operational amplifier chip is connected with the negative pole (0V) of the power supply;
an output positive voltage end V + of the voltage regulating circuit relative to the ground end GND is connected with a power supply positive electrode (25V), and an output negative voltage end V-of the voltage regulating circuit relative to the ground end GND is connected with a power supply negative electrode (0V); a capacitor C3 and a capacitor C4 which are mutually connected in parallel are connected between the positive output voltage end V + and the ground end GND, and a capacitor C2 is connected between the negative output voltage end V-and the ground end GND.
When the all-SiC-MOSFET module works, the positive voltage output end V + and the negative voltage output end V-can output different positive voltages and negative voltages relative to the ground end GND by adjusting the adjustable resistor R4 and the adjustable resistor R5, so that the required positive and negative voltages for turning on different all-SiC-MOSFET modules are provided, and the turning on and off of the modules are reliably driven. When the power supply voltage is 25V, the positive voltage output end V + outputs a positive voltage of 0-25V, and meanwhile, the negative voltage output end V-outputs a negative voltage of-25-0V. The voltage regulator device Q is a well-known circuit device, and in particular, a TL431 model is selected.
Claims (6)
1. A driving device of a high-power full SiC-MOSFET module comprises a signal input circuit, a fault feedback circuit, a power conversion circuit and a power conditioning circuit; the power conversion circuit is characterized by comprising a DC-DC power module with overcurrent protection, wherein the input voltage of the DC-DC power module is 4-40V, the output voltage of the DC-DC power module is 15V +/-3%, and the ripple factor is less than 5%; the power supply conditioning circuit comprises a voltage regulating circuit, so that a driving power supply with adjustable output voltage is output; the driving output signal is pressed on the full SiC-MOSFET module through the connector.
2. The driving apparatus of high power all-SiC-MOSFET module as claimed in claim 1, wherein the signal input circuit, the fault feedback circuit and the power conversion circuit are connected to the external control circuit using an 8-pin WE connector.
3. The driving apparatus of the high power all-SiC-MOSFET module according to claim 1 or 2, wherein the input control signal of the signal input circuit and the feedback signal of the fault feedback circuit are both differential signals.
4. The driving device of the high-power full SiC-MOSFET module according to claim 3, wherein the voltage regulating circuit of the power supply conditioning circuit comprises an operational amplifier chip;
the IN-phase input end + IN of the operational amplifier chip is connected with the positive electrode of a power supply through a resistor R1, the IN-phase input end + IN of the operational amplifier chip is also connected with the negative electrode of the power supply through an adjustable resistor R4 and an adjustable resistor R5, the IN-phase input end + IN of the operational amplifier chip is also connected with the positive end K of the input voltage of a voltage stabilizing device Q, the negative end A of the input voltage of the voltage stabilizing device Q is connected with the negative electrode of the power supply, and the voltage reference end REF of the voltage stabilizing device Q is connected with a connecting node between the adjustable resistor R4 and the adjustable resistor R5;
a capacitor C1 is connected between the positive electrode and the negative electrode of the power supply;
the inverting input end-IN of the operational amplifier chip is connected with the output end OUT of the operational amplifier chip;
the output end OUT of the operational amplifier chip is connected with one end of a resistor R3, and the other end of the resistor R3 is used as a ground end GND;
the positive power supply end U + of the operational amplifier chip is connected with the positive electrode of the power supply through a resistor R2, and the negative power supply end U-of the operational amplifier chip is connected with the negative electrode of the power supply;
an output positive voltage end V + of the voltage regulating circuit relative to the ground end GND is connected with the positive electrode of the power supply, and an output negative voltage end V-of the voltage regulating circuit relative to the ground end GND is connected with the negative electrode of the power supply; a capacitor C3 and a capacitor C4 which are mutually connected in parallel are connected between the positive output voltage end V + and the ground end GND, and a capacitor C2 is connected between the negative output voltage end V-and the ground end GND.
5. The driving apparatus of a high power all-SiC-MOSFET module according to claim 4, wherein the supply voltage of the voltage regulating circuit is 25V.
6. The driving apparatus of high power all-SiC-MOSFET module as claimed in claim 4, wherein the voltage regulator device Q is a TL431 type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911314490.1A CN111030452A (en) | 2019-12-19 | 2019-12-19 | Driving device of high-power full SiC-MOSFET module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911314490.1A CN111030452A (en) | 2019-12-19 | 2019-12-19 | Driving device of high-power full SiC-MOSFET module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111030452A true CN111030452A (en) | 2020-04-17 |
Family
ID=70209949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911314490.1A Pending CN111030452A (en) | 2019-12-19 | 2019-12-19 | Driving device of high-power full SiC-MOSFET module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111030452A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023165218A1 (en) * | 2022-03-04 | 2023-09-07 | 中车永济电机有限公司 | Driving apparatus and device for silicon carbide (sic) power device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203504405U (en) * | 2013-10-12 | 2014-03-26 | 南车株洲电力机车有限公司 | Driver controller used for urban rail vehicles |
| CN107844156A (en) * | 2017-10-26 | 2018-03-27 | 广州金升阳科技有限公司 | Bleeder circuit and its application |
| JP2018074676A (en) * | 2016-10-26 | 2018-05-10 | 株式会社デンソー | Gate drive circuit |
| CN208461686U (en) * | 2018-08-01 | 2019-02-01 | 浙江艾罗网络能源技术有限公司 | A kind of driving device applied to SiC-MOSFET |
-
2019
- 2019-12-19 CN CN201911314490.1A patent/CN111030452A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203504405U (en) * | 2013-10-12 | 2014-03-26 | 南车株洲电力机车有限公司 | Driver controller used for urban rail vehicles |
| JP2018074676A (en) * | 2016-10-26 | 2018-05-10 | 株式会社デンソー | Gate drive circuit |
| CN107844156A (en) * | 2017-10-26 | 2018-03-27 | 广州金升阳科技有限公司 | Bleeder circuit and its application |
| CN208461686U (en) * | 2018-08-01 | 2019-02-01 | 浙江艾罗网络能源技术有限公司 | A kind of driving device applied to SiC-MOSFET |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023165218A1 (en) * | 2022-03-04 | 2023-09-07 | 中车永济电机有限公司 | Driving apparatus and device for silicon carbide (sic) power device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102255489B (en) | High-voltage start-up circuit for switching power supply converter | |
| CN103427607B (en) | The drive circuit of insulated gate bipolar transistor | |
| CN203840210U (en) | AC inverter circuit | |
| CN102255526A (en) | AC-DC power supply conversion chip and power switching circuit | |
| CN101741251A (en) | DC voltage converter for automobile | |
| CN105305831A (en) | Bridge type converter single-path signal gate driving circuit using isolation transformer | |
| CN202142981U (en) | Circuit for AC/DC switch power supply converter high-voltage starting | |
| CN101711069A (en) | LED driving power supply circuit | |
| CN208589920U (en) | A kind of isolated form Wide-range voltage-stabilised power source circuit | |
| CN203387399U (en) | Low-standby power consumption active power factor correction module | |
| CN201113788Y (en) | Electric power protective circuit | |
| CN111030452A (en) | Driving device of high-power full SiC-MOSFET module | |
| CN109391021A (en) | Cell anti-reverse fills the control device and solar energy MPPT control system of switch | |
| CN202444406U (en) | Matching circuit and high-power pulse power supply using the same | |
| CN202565155U (en) | Insulated gate bipolar transistor driving circuit | |
| CN201717784U (en) | Intelligent high frequency switching power supply | |
| CN101615902B (en) | Soft-off circuit and method | |
| CN108649798A (en) | A kind of high-power linear power supply and its control circuit | |
| CN103795400B (en) | High-precision sampling circuit based on VICOR module | |
| CN112583393A (en) | IGBT gate driver based on single power supply circuit | |
| CN205283382U (en) | Half -bridge driver of remote isolation control and power supply of no independent source of power | |
| CN203275499U (en) | Inverter overload detection circuit | |
| CN219145107U (en) | Wireless power supply circuit based on direct current bus | |
| CN204361903U (en) | Isolation type switch power | |
| CN114401029B (en) | High-power carrier signal transmitting circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200417 |
|
| RJ01 | Rejection of invention patent application after publication |