CN213501310U

CN213501310U - Monocrystalline silicon piece with good high-temperature resistance

Info

Publication number: CN213501310U
Application number: CN202020868502.7U
Authority: CN
Inventors: 陈路
Original assignee: Shanghai Yihui Energy Technology Co ltd
Current assignee: Shanghai Yihui Energy Technology Co ltd
Priority date: 2020-05-22
Filing date: 2020-05-22
Publication date: 2021-06-22
Anticipated expiration: 2030-05-22

Abstract

The utility model discloses a monocrystalline silicon piece that high temperature resistance can be good, including the monocrystalline silicon body, the top of monocrystalline silicon body is provided with the bond line, one side that the monocrystalline silicon body was kept away from to the bond line is provided with the substrate layer, the substrate layer includes boron raw material layer, one side that the substrate layer was kept away from to boron raw material layer is provided with quartz raw material layer, one side that the bond line was kept away from to the substrate layer is provided with the wearing layer, the bottom of monocrystalline silicon body is provided with the glue film, one side that the monocrystalline silicon body was kept away from to the glue film is provided with high temperature resistant layer, high temperature resistant layer includes the glass fiber layer, one side that high temperature resistant layer was. The utility model discloses a set up mutually supporting on monocrystalline silicon body, bond line, substrate layer, wearing layer, glue film and high temperature resistant layer, reached the advantage that high temperature resistant performance is good, can not influence monocrystalline silicon piece's use, can not shorten monocrystalline silicon piece's life.

Description

Monocrystalline silicon piece with good high-temperature resistance

Technical Field

The utility model relates to a monocrystalline silicon piece technical field specifically is a monocrystalline silicon piece that high temperature resistance is good.

Background

Monocrystalline silicon is an active non-metallic element, is an important component of a crystal material, is at the front of the development of a new material, is mainly used as a semiconductor material and utilizes solar photovoltaic power generation, heat supply and the like, and as solar energy has the advantages of cleanness, environmental protection, convenience and the like, in the last thirty years, a solar energy utilization technology has been greatly developed in the aspects of research and development, commercial production and market development, and becomes one of the new industries of rapid and stable development in the world.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a monocrystalline silicon piece that high temperature resistance can be good possesses the good advantage of high temperature resistance, has solved the poor problem of current monocrystalline silicon piece high temperature resistance can.

In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a monocrystalline silicon piece that high temperature resistance is good, includes the monocrystalline silicon body, the top of monocrystalline silicon body is provided with the bond line, one side that the monocrystalline silicon body was kept away from to the bond line is provided with the substrate layer, one side that the bond line was kept away from to the substrate layer is provided with the wearing layer, the bottom of monocrystalline silicon body is provided with the glue film, one side that the monocrystalline silicon body was kept away from to the glue film is provided with high temperature resistant layer, high temperature resistant layer includes the glass fiber layer, one side of glass fiber layer is provided with the.

Preferably, the substrate layer includes boron raw material layer, one side of boron raw material layer is provided with quartz raw material layer, one side that boron raw material layer was kept away from to quartz raw material layer is provided with monocrystalline silicon raw material layer.

Preferably, the wear-resistant layer comprises a composite base layer, and one side of the composite base layer is provided with an epoxy resin layer.

Preferably, the surface of the boron raw material layer is bonded with the quartz stone raw material layer, and the surface of the quartz stone raw material layer is bonded with the monocrystalline silicon raw material layer.

Preferably, the surface of the composite base layer is bonded with the epoxy resin layer.

Compared with the prior art, the beneficial effects of the utility model are as follows:

1. the utility model discloses a set up mutually supporting on monocrystalline silicon body, bond line, substrate layer, wearing layer, glue film and high temperature resistant layer, reached the advantage that high temperature resistant performance is good, can not influence monocrystalline silicon piece's use, can not shorten monocrystalline silicon piece's life.

2. The utility model discloses a set up the substrate layer, excellent wear resistance and fatigue resistance have, the service strength of monocrystalline silicon body has been increased, through setting up the wearing layer, ultraviolet ray aging resistance has, the monocrystalline silicon body still can keep good mechanical properties under the high temperature condition for a long time exposed to the sun, good corrosion resistance still has simultaneously, the corrosion resistance and the chemical resistance of monocrystalline silicon body have been increased, the life of monocrystalline silicon body has been prolonged, through setting up high temperature resistant layer, high temperature resistant effect has, the corrosion resistance and the high temperature resistance performance etc. of monocrystalline silicon body have been increased, the life of monocrystalline silicon body has been increased.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a sectional view of the structure of the substrate layer of the present invention;

FIG. 3 is a sectional view of the wear-resistant layer structure of the present invention;

fig. 4 is a sectional view of the high temperature resistant layer structure of the present invention.

In the figure: 1. a monocrystalline silicon body; 2. an adhesive layer; 3. a substrate layer; 31. a boron material layer; 32. a quartz stone raw material layer; 33. a monocrystalline silicon raw material layer; 4. a wear layer; 41. a composite base layer; 42. an epoxy resin layer; 5. a glue layer; 6. a high temperature resistant layer; 61. a glass fiber layer; 62. a monocrystalline silicon thin film layer.

Detailed Description

In order to make the technical solution of the present invention better understood, the present invention is described in detail below with reference to the accompanying drawings, and the description of the present invention is only exemplary and explanatory, and should not be construed as limiting the scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

It should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like refer to the orientation or positional relationship shown in the drawings, or the orientation or positional relationship that the utility model is usually placed when in use, and are used for convenience of description and simplification of description, but do not refer to or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.

Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Referring to fig. 1-4, a monocrystalline silicon wafer with good high temperature resistance comprises a monocrystalline silicon body 1, a bonding layer 2 is disposed on the top of the monocrystalline silicon body 1, a substrate layer 3 is disposed on the side of the bonding layer 2 away from the monocrystalline silicon body 1, by disposing the substrate layer 3, the monocrystalline silicon wafer has excellent wear resistance and fatigue resistance, and the service strength of the monocrystalline silicon body 1 is increased, the substrate layer 3 comprises a boron material layer 31, a quartz stone material layer 32 is disposed on one side of the boron material layer 31, a monocrystalline silicon material layer 33 is disposed on one side of the quartz stone material layer 32 away from the boron material layer 31, the surface of the boron material layer 31 is bonded to the quartz stone material layer 32, the surface of the quartz stone material layer 32 is bonded to the monocrystalline silicon material layer 33, a wear resistance layer 4 is disposed on one side of the substrate layer 3 away from the bonding layer 2, by disposing the wear resistance layer 4, the monocrystalline silicon wafer has ultraviolet aging resistance, and the monocrystalline silicon, meanwhile, the silicon single crystal wear-resistant layer has good corrosion resistance, the corrosion resistance and the chemical resistance of the silicon single crystal body 1 are improved, the service life of the silicon single crystal body 1 is prolonged, the wear-resistant layer 4 comprises a composite base layer 41, an epoxy resin layer 42 is arranged on one side of the composite base layer 41, the surface of the composite base layer 41 is bonded with the epoxy resin layer 42, a glue layer 5 is arranged at the bottom of the silicon single crystal body 1, a high-temperature-resistant layer 6 is arranged on one side, away from the silicon single crystal body 1, of the glue layer 5, the high-temperature-resistant layer 6 is arranged, the high-temperature-resistant layer 6 has a high-temperature-resistant effect by being provided with the high-temperature-resistant layer 6, the corrosion resistance, the high-temperature-resistant performance and the like of the silicon single crystal body 1 are improved, the service life of the silicon single crystal body 1 is prolonged, the method has the advantages of good high-temperature resistance, no influence on the use of the monocrystalline silicon piece and no reduction in the service life of the monocrystalline silicon piece.

During the use, through setting up substrate layer 3, boron raw materials layer 31, quartz raw materials layer 32 and monocrystalline silicon raw materials layer 33, excellent wear resistance and fatigue resistance have, monocrystalline silicon body 1's service strength has been increased, through setting up wearing layer 4 composite base 41 and epoxy layer 42, ultraviolet ray aging resistance has, monocrystalline silicon body 1 still can keep good mechanical properties under the high temperature condition for a long time exposed to the sun, good corrosion resistance still has simultaneously, monocrystalline silicon body 1's corrosion resistance and chemical resistance have been increased, monocrystalline silicon body 1's life has been prolonged, through setting up high temperature resistant layer 6, glass fiber layer 61 and monocrystalline silicon thin film layer 62, high temperature resistant effect has, monocrystalline silicon body 1's corrosion resistance and high temperature resistance etc. have been increased, monocrystalline silicon body 1's life has been increased.

All the components in the document can be customized according to the description of the specification and the attached drawings, the connection relationship and the specific structure between the layers in the document are all made by the prior art, such as by mechanical methods, by adhesives, by various welding methods (the more layers of the double-core cable are overlapped, the better the service performance is, the production process comprises drawing, stranding and cladding, the cladding process comprises extrusion, longitudinal wrapping, lapping and dip coating), no specific description is made, all the components in the document are general standard components or components known by those skilled in the art, and the structure and the principle of the components can be known by technical manuals or conventional experimental methods.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.

The principles and embodiments of the present invention have been explained herein using specific examples, which are presented only to assist in understanding the methods and their core concepts. It should be noted that there are infinite specific structures due to the limited character expressions, and it will be apparent to those skilled in the art that various improvements, decorations or changes can be made without departing from the principles of the present invention, and the technical features can be combined in a suitable manner; the application of these modifications, variations or combinations, or the application of the concepts and solutions of the present invention in other contexts without modification, is not intended to be considered as a limitation of the present invention.

Claims

1. A monocrystalline silicon piece with good high temperature resistance comprises a monocrystalline silicon body (1) and is characterized in that: the top of monocrystalline silicon body (1) is provided with bond line (2), one side that monocrystalline silicon body (1) was kept away from in bond line (2) is provided with substrate layer (3), one side that bond line (2) was kept away from in substrate layer (3) is provided with wearing layer (4), the bottom of monocrystalline silicon body (1) is provided with glue film (5), one side that monocrystalline silicon body (1) was kept away from in glue film (5) is provided with high temperature resistant layer (6), high temperature resistant layer (6) include glass fiber layer (61), one side of glass fiber layer (61) is provided with monocrystalline silicon thin layer (62).

2. The monocrystalline silicon wafer with good high temperature resistance according to claim 1, wherein: the substrate layer (3) comprises a boron raw material layer (31), one side of the boron raw material layer (31) is provided with a quartz raw material layer (32), and one side, far away from the boron raw material layer (31), of the quartz raw material layer (32) is provided with a monocrystalline silicon raw material layer (33).

3. The monocrystalline silicon wafer with good high temperature resistance according to claim 1, wherein: the wear-resistant layer (4) comprises a composite base layer (41), and an epoxy resin layer (42) is arranged on one side of the composite base layer (41).

4. The single crystal silicon wafer having a good high temperature resistance according to claim 2, wherein: the surface of the boron raw material layer (31) is bonded with the quartz raw material layer (32), and the surface of the quartz raw material layer (32) is bonded with the monocrystalline silicon raw material layer (33).

5. The single crystal silicon wafer having a good high temperature resistance according to claim 3, wherein: the surface of the composite base layer (41) is bonded and connected with the epoxy resin layer (42).