CN213472419U - Semiconductor heating chip - Google Patents
Semiconductor heating chip Download PDFInfo
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- CN213472419U CN213472419U CN202121055673.9U CN202121055673U CN213472419U CN 213472419 U CN213472419 U CN 213472419U CN 202121055673 U CN202121055673 U CN 202121055673U CN 213472419 U CN213472419 U CN 213472419U
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Abstract
The application discloses semiconductor chip that generates heat contains: a packaging layer; the semiconductor heating layer comprises a substrate and a functional layer, wherein a barrier layer is arranged between the substrate and the functional layer; the side provided with the functional layer and the barrier layer is the first surface of the semiconductor heating layer; the bonding film layer is positioned between the packaging layer and the semiconductor heating layer; the electrode layer is arranged between the bonding film layer and the semiconductor heating layer and is fixedly connected with the first surface; the barrier layer is formed on the substrate by adopting a target material which is made of silicon through a sputtering process; the functional layer is formed on the barrier layer by adopting a target material which is made of tin antimony oxide or indium tin oxide through a sputtering process. This application prevents that the functional layer on the semiconductor layer that generates heat from receiving other materials erosion such as wearing and tearing or steam through setting up the encapsulation layer.
Description
Technical Field
The application relates to the technical field of composite semiconductor heating thin film materials, in particular to a semiconductor heating chip.
Background
The electrothermal film technology is a new heating mode, and great progress is made in recent years. The electric heating element has the advantages that the electric heating film generates heat in a surface shape, the heat exchange area is large, and the electric heating conversion efficiency is high, so that the temperature rise is faster under the same power, the energy consumption is less, and the electric heating element is more energy-saving and power-saving than the traditional electric heating element. In addition, the electrothermal film can also be widely applied to the field of health care by radiating far infrared waves, and the far infrared waves can directly penetrate through skin and subcutaneous tissues and act on blood vessels, nerve endings and lymphatic vessels to cause molecular resonance and generate a warming effect, so that the electrothermal film has the effects of promoting blood circulation to remove blood stasis, diminishing inflammation and relieving pain and enhancing the immunity of a human body. In the long term, China is realizing energy transformation, electric energy mainly based on non-fossil energy becomes a primary energy main body, the electrification rate in primary energy consumption reaches 100%, and under the large background, a cleaner electric heating mode is undoubtedly more consistent with the current development trend and is also the best replacement technology of the future fossil heating mode.
At present, a heating chip with long service life and safe use process needs to be provided, and the daily heating requirement of people is met.
SUMMERY OF THE UTILITY MODEL
To prior art's not enough, this application provides a semiconductor chip that generates heat, satisfies people to the requirement of heating building materials long service life and use safety.
The invention aims to be achieved through the following technical scheme.
A semiconductor heat-generating chip comprising:
a packaging layer;
the semiconductor heating layer comprises a substrate and a functional layer, wherein a barrier layer is arranged between the substrate and the functional layer; the side provided with the functional layer and the barrier layer is the first surface of the semiconductor heating layer;
the bonding film layer is positioned between the packaging layer and the semiconductor heating layer;
the electrode layer is arranged between the bonding film layer and the semiconductor heating layer and is fixedly connected with the first surface;
wherein the content of the first and second substances,
the barrier layer is formed on the substrate by adopting a target material containing silicon through a sputtering process;
the functional layer is formed on the barrier layer by adopting a target material which is made of tin antimony oxide or indium tin oxide through a sputtering process.
Preferably, the thickness of the barrier layer is 10-30 nm.
Preferably, the functional layer has a thickness of 50 to 300 nm.
Preferably, a silver glue layer is arranged between the semiconductor heating layer and the electrode layer.
Preferably, the material of the adhesive film layer is polyethylene-polyvinyl acetate copolymer.
Preferably, the encapsulation layer is made of glass.
Preferably, the substrate is made of glass.
Preferably, the substrate is made of a polyester film or a polyimide film.
Preferably, the encapsulation layer is made of polyester or polyimide.
Preferably, the semiconductor heating layer is arranged between the two packaging layers.
Compared with the prior art, the semiconductor heating chip that this application provided: through setting up the encapsulation layer, prevent that the functional layer on the semiconductor layer that generates heat from receiving other materials erosion such as wearing and tearing or steam.
Through establish the barrier layer that siliceous target material sputtering formed between basement and functional layer, impurity in the basement can outwards diffuse under the circumstances of intensification, and the barrier layer prevents on the one hand that impurity in the basement from diffusing to the functional layer, and on the other hand prevents that steam from permeating into the functional layer, reduces the damage of impurity and steam to the layer that generates heat. Under the condition that a functional layer is formed by sputtering a target containing tin antimony oxide or indium tin oxide, the thermal expansion coefficient and the lattice constant of the substrate and the functional layer can be matched by introducing the film layer design, so that the semiconductor heating chip is reliably connected among all layers of structures in the using process, and the service life is prolonged.
The film preparation method in the application adopts a magnetron sputtering mode to form the barrier layer and the heating layer, the manufacturing process is pollution-free, the prepared film has high permeability, the transmittance is up to more than 80%, the uniformity is high, the low-temperature radiation deviation is +/-1 ℃, the application scene is wider, and the film has wide industrial utilization value.
Drawings
Fig. 1 is an exploded schematic view of a semiconductor heating chip according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a top view angle of a semiconductor heating chip according to a first embodiment of the present invention;
fig. 3 is an exploded schematic view of a semiconductor heating chip according to a second embodiment of the present invention;
fig. 4 is a schematic structural diagram of a top view angle of a semiconductor heating chip according to a second embodiment of the present invention.
1-an encapsulation layer; 2-a semiconductor heating layer; 3-bonding the film layer; 4-electrode layer, 5-silver glue layer.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the accompanying drawings and embodiments. The principles and features of the present invention are described below in conjunction with the following drawings, which illustrate, without conflict, that the embodiments and features of the embodiments of the present invention may be combined with each other. The examples given are only for explaining the invention and are not intended to limit the scope of the invention.
Example one
As shown in fig. 1 and 2, the present embodiment provides a semiconductor heat generating chip, comprising:
the packaging layer 1 is made of soda-lime glass, and the thickness of the packaging layer 1 is 3.6 mm.
The semiconductor heating layer 2 comprises a substrate and a functional layer, and a barrier layer is arranged between the substrate and the functional layer; the side provided with the functional layer and the barrier layer is the first surface of the semiconductor heating layer 2. In this example, the substrate is soda lime glass.
The bonding film layer 3 of ethylene-vinyl acetate copolymer (EVA for short), the bonding film layer 3 is located between packaging layer 1 and semiconductor heating layer 2, the thickness of bonding film layer 3 is 40 microns, and the cross-sectional dimension of bonding film layer 3 is unanimous with packaging layer 1.
The copper electrode layer 4 is in a strip shape, the two electrode layers 4 are arranged between the bonding film layer 3 and the semiconductor heating layer 2 and are respectively positioned at two opposite ends of the semiconductor heating layer 2, and the electrode layers 4 are fixedly connected with the first surface of the semiconductor heating layer 2; the thickness of the electrode layer 4 was 60 μm. In this embodiment, a silver glue layer 5 is disposed between the electrode layer 4 and the semiconductor heating layer 2 to reduce the contact resistance.
Wherein the content of the first and second substances,
the barrier layer is formed on the substrate by adopting a target material containing silicon through a sputtering process;
the functional layer is formed on the barrier layer by adopting a target material which is made of tin antimony oxide or indium tin oxide through a sputtering process.
When the semiconductor heating chip provided by the embodiment is manufactured, the packaging layer 1 is ultrasonically cleaned for 30min by glass cleaning liquid, alkali liquor prepared by sodium hydroxide and deionized water respectively, and then is blown dry for later use; electrode layers 4 are laid at two opposite ends of the first surface of the semiconductor heating layer 2, and the semiconductor heating layer 2 and the electrode layers 4 are pasted through a silver glue layer; a layer of bonding film layer 3 is laid on one surface of the electrode layer 4, which is not connected with the semiconductor heating layer 2; and placing the cleaned standby packaging layer 1 on the adhesive film layer 3, and finally integrally packaging the semiconductor heating layer 2, the electrode layer 4, the adhesive film layer 3 and the packaging layer 1 by using a hot press. Hot pressing is carried out at a temperature of 165 ℃ under vacuum at 1 MPa.
The functional layer of the semiconductor heating layer is positioned between the substrate made of glass and the packaging layer 1, and is prevented from being corroded by other substances such as abrasion or water vapor.
Example two
As shown in fig. 3 and 4, the present embodiment provides a semiconductor heat-generating chip comprising:
the packaging layer 1 is made of polyester (PET for short) or polyimide (PI for short), and the thickness of the packaging layer 1 is 110 micrometers.
The semiconductor heating layer 2 comprises a substrate and a functional layer, a barrier layer is arranged between the substrate and the functional layer, and the first surface of the semiconductor heating layer is arranged on one side provided with the functional layer and the barrier layer.
The semiconductor heating layer 2 is arranged between the two packaging layers 1.
The bonding film layer 3 of ethylene-vinyl acetate copolymer (EVA for short), bonding film layer 3 is located between packaging layer 1 and semiconductor heating layer 2, bonding film layer 3 is 53 microns thick, and the cross-sectional dimension of bonding film layer 3 is unanimous with packaging layer 1.
The electrode layer 4 of copper material is the banding, and two electrode layers 4 are located and are glued between rete 3 and the semiconductor layer 2 that generates heat, each is located the relative both ends of semiconductor layer 2 that generates heat. In this embodiment, the electrode layer 4 is fixedly connected with the first surface, that is, the electrode layer 4 is arranged on only one surface of the semiconductor heating layer 2 provided with the functional layer; the thickness of the electrode layer 4 was 85 microns. In this embodiment, a silver glue layer is disposed between the electrode layer 4 and the semiconductor heating layer 2 to reduce the contact resistance.
Wherein the substrate is made of polyester (PET for short) or polyimide (PI for short);
the barrier layer is formed on the substrate by adopting a target material containing silicon through a sputtering process, and the substrate in the embodiment is a flexible film such as a polyester film or a polyimide film;
the functional layer is formed on the barrier layer by adopting a target material which is made of tin antimony oxide or indium tin oxide through a sputtering process.
In the embodiment, a polyurethane layer and an acrylate layer are arranged between the substrate and the barrier layer; the polyurethane layer is formed on the substrate, and then the acrylate layer is formed.
When the semiconductor heating chip provided by the embodiment is manufactured:
ultrasonically cleaning the packaging layer 1 by using glass cleaning liquid, alkali liquor prepared by sodium hydroxide and deionized water for 20min respectively, and then blowing to dry for later use;
laying an adhesive film layer 3 on one packaging layer 1;
laying the semiconductor heating layer 2 on the bonding film layer 3, wherein the first surface of the semiconductor heating layer 2 faces upwards when the semiconductor heating layer is laid;
then, electrode layers 4 are laid on the semiconductor heating layer 2, the two electrode layers 4 are respectively positioned at two opposite ends of the semiconductor heating layer 2, and the semiconductor heating layer 2 and the electrode layers 4 are pasted through silver glue layers;
laying a bonding film layer 3 on the electrode layer 4;
and finally, laying the packaging layer 1 on the bonding film layer 3.
And integrally packaging the semiconductor heating layer 2, the electrode layer 4, the bonding film layer 3 and the packaging layer 1 by using a hot press. Hot pressing at 130 deg.C under vacuum of 0.3 Mpa.
The functional layer of the semiconductor heating layer is positioned between the substrate made of glass and the packaging layer 1, and is prevented from being corroded by other substances such as abrasion or water vapor.
The adhesive film layer 3 made of ethylene-vinyl acetate copolymer (EVA for short) is heated to become colorless transparent cross-linked substance, and has anti-reflection and adhesive effects.
According to the method, the substrate is cleaned and then coated with the polyurethane, the polyurethane is liquid, the smoothness of the substrate is treated through the leveling effect, and the roughness is reduced after the polyurethane is coated by the roller, so that the adhesion of a heating layer is facilitated. Meanwhile, the polyurethane also has the effect of blocking impurities, and can further prevent the impurities in the substrate from diffusing to the heating layer.
Under heating state, the basement of flexible materials such as PET can take place the shrink, and the substrate shrink can lead to generating heat the layer inefficacy or resistance to change, and this application is through roller coat acrylic ester, increases basement hardness, prevents that the functional layer from being heated the shrink and self takes place the shrink and lead to functional layer inefficacy or resistance to change along with the basement.
In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "circumferential", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.
Claims (10)
1. A semiconductor heat-generating chip, comprising:
a packaging layer;
the semiconductor heating layer comprises a substrate and a functional layer, wherein a barrier layer is arranged between the substrate and the functional layer; the side provided with the functional layer and the barrier layer is the first surface of the semiconductor heating layer;
the bonding film layer is positioned between the packaging layer and the semiconductor heating layer;
the electrode layer is arranged between the bonding film layer and the semiconductor heating layer and is fixedly connected with the first surface;
wherein the content of the first and second substances,
the barrier layer is formed on the substrate by adopting a target material containing silicon through a sputtering process;
the functional layer is formed on the barrier layer by adopting a target material which is made of tin antimony oxide or indium tin oxide through a sputtering process.
2. A semiconductor heat-generating chip according to claim 1, wherein the thickness of the barrier layer is 10-30 nm.
3. A semiconductor heat-generating chip according to claim 1, wherein the functional layer has a thickness of 50 to 300 nm.
4. A semiconductor heat-generating chip according to claim 1, wherein a silver paste layer is provided between the semiconductor heat-generating layer and the electrode layer.
5. The semiconductor heating chip as claimed in claim 1, wherein the adhesive film layer is made of polyethylene-polyvinyl acetate copolymer.
6. A semiconductor heat-generating chip as recited in claim 1, wherein the encapsulating layer is made of glass.
7. A semiconductor heat-generating chip according to claim 6, wherein the substrate is made of glass.
8. A semiconductor heat-generating chip according to claim 1, wherein the substrate is made of a polyester film or a polyimide film.
9. A semiconductor heat-generating chip according to claim 8, wherein the encapsulating layer is made of polyester or polyimide.
10. A semiconductor heat generating chip according to claim 9, wherein the semiconductor heat generating layer is provided between two of the package layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121055673.9U CN213472419U (en) | 2021-05-18 | 2021-05-18 | Semiconductor heating chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121055673.9U CN213472419U (en) | 2021-05-18 | 2021-05-18 | Semiconductor heating chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213472419U true CN213472419U (en) | 2021-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121055673.9U Active CN213472419U (en) | 2021-05-18 | 2021-05-18 | Semiconductor heating chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213472419U (en) |
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2021
- 2021-05-18 CN CN202121055673.9U patent/CN213472419U/en active Active
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