CN213425016U

CN213425016U - Packaging structure

Info

Publication number: CN213425016U
Application number: CN202022376892.9U
Authority: CN
Inventors: 温质康; 乔小平; 苏智昱
Original assignee: Fujian Huajiacai Co Ltd
Current assignee: Fujian Huajiacai Co Ltd
Priority date: 2020-10-23
Filing date: 2020-10-23
Publication date: 2021-06-11
Anticipated expiration: 2030-10-23

Abstract

The utility model discloses a packaging structure, which comprises a substrate and a light-emitting device, wherein the light-emitting device is arranged on the substrate, and the packaging structure is characterized by also comprising a first inorganic film and a buffer layer; the first inorganic thin film covers the light emitting device; the buffer layer covers the first inorganic thin film, a concave-convex structure is arranged on the buffer layer, the concave-convex structure is at least located on the side edge of the top of the buffer layer, and nano repair particles and/or water absorption particles are filled in a concave area of the concave-convex structure. Among the above-mentioned technical scheme, be provided with concave-convex structure on the buffer layer, concave-convex structure has better buffer capacity. Concave-convex structure can apply the pressure dispersion on the buffer layer, and cracked inorganic film exists in the depressed area of wave structure, and every depressed area all is provided with nanometer repair particle and/or the granule that absorbs water to play the effect of independent isolated steam and oxygen. The nano repair particles can repair damaged buffer layers, and the water absorbing particles further absorb invading water vapor.

Description

Packaging structure

Technical Field

The utility model relates to a panel packaging field especially relates to an encapsulation structure.

Background

An organic light emitting diode (abbreviated as OLED) display panel has the characteristics of self-luminous property, low power consumption, wide viewing angle, fast response speed, ultra-light and ultra-thin property, good shock resistance and the like, can realize the advantages of flexible display, large-area full-color display and the like, and is considered as a display device with the most development potential by the industry.

Conventional packaging structures include a stack of inorganic films and organic films, which can be referred to in patent application No. CN201710002946.5 entitled thin film packaging structure, flexible display panel, and method for manufacturing thin film packaging structure.

In the conventional packaging structure, a Mask (Mask) and a substrate cannot be completely attached in the manufacturing process, so that a film enters a gap between the Mask (Mask) and the substrate, and the shadow area of the Mask (Mask) is increased. When a large plate is cut by laser, laser can cut the inorganic thin film in the shadow area, so that the inorganic thin film on the side of the display area is cracked, water vapor and oxygen permeate into a light-emitting device (an OLED device or an LCD device) through the cracked part (namely a hole H) on the inorganic thin film, the direction of an arrow is a water vapor permeation path, the structure is shown in figure 1, the light-emitting device fails, and the failure rate of a product is increased.

SUMMERY OF THE UTILITY MODEL

Therefore, it is desirable to provide a package structure, which solves the problem of insufficient protection of the existing package structure against water vapor and oxygen.

In order to achieve the above object, this embodiment provides a package structure, including a substrate and a light emitting device, where the light emitting device is disposed on the substrate, and further includes a first inorganic film and a buffer layer;

the first inorganic thin film covers the light emitting device;

the buffer layer covers the first inorganic thin film, a concave-convex structure is arranged on the buffer layer, the concave-convex structure is at least located on the side edge of the top of the buffer layer, and nano repair particles and/or water absorption particles are filled in a concave area of the concave-convex structure.

Further, the shape of the cross section of the concave-convex structure is wave-shaped.

Further, a second inorganic thin film is also included;

the second inorganic film is located on the buffer layer, the concave-convex structure is covered by the second inorganic film, and the upper surface of the second inorganic film is flat.

Further, a polyimide layer and a thin film transistor device are also included;

the polyimide layer is disposed on the substrate;

the thin film transistor device is disposed on the polyimide layer;

the light emitting device is disposed on the thin film transistor device, and the light emitting device is an OLED device.

Further, a third inorganic thin film and a fourth inorganic thin film are included;

the third inorganic film is positioned on the polyimide layer;

the fourth inorganic thin film is located on the third inorganic thin film, and the upper surface of the fourth inorganic thin film is used for arranging the thin film transistor device.

Be different from prior art, among the above-mentioned technical scheme, be provided with concave-convex structure on the buffer layer, concave-convex structure has better buffer capacity. When radium-shine cutting base plate, the pressure that concave-convex structure can apply on the buffer layer is dispersed, and cracked inorganic film exists in the depressed area in the wave structure, and every depressed area all is provided with nanometer repair particle and/or absorbs water the granule to play the effect of independent isolated steam and oxygen. The nano repair particles can repair damaged buffer layers, and the water absorbing particles further absorb invading water vapor. This application protects luminescent device through multiple protective structure, increases luminescent device's security, avoids luminescent device to become invalid.

Drawings

FIG. 1 is a schematic structural diagram of a water vapor and oxygen intrusion encapsulation structure in the prior art;

fig. 2 is a schematic cross-sectional view of a light-emitting device according to the present embodiment;

fig. 3 is a schematic cross-sectional view illustrating a first inorganic thin film according to the present embodiment;

fig. 4 is a schematic cross-sectional structure diagram of the buffer layer and the concave-convex structure in the embodiment;

FIG. 5 is a schematic cross-sectional view of the nano-particles, water-absorbing particles and a second inorganic thin film according to the present embodiment;

fig. 6 is a top view of the package structure of the present embodiment.

Description of reference numerals:

1. a substrate;

2. a polyimide layer;

3. a third inorganic thin film;

4. a fourth inorganic thin film;

5. a thin film transistor device;

6. a light emitting device;

7. a first inorganic thin film;

8. a buffer layer;

81. a relief structure;

82. a recessed region;

83. a raised region;

9. nano-scale repair particles;

10. water-absorbing particles;

11. a second inorganic thin film.

Detailed Description

To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.

Referring to fig. 2 to 6, a method for fabricating a package structure of the present embodiment includes the following steps: a polyimide layer 2 is manufactured on a base plate 1 and is used for forming a flexible substrate so as to be suitable for an OLED device; specifically, a polyimide is coated on a substrate 1, so that a polyimide layer 2 is formed on the substrate 1, and the structure is shown in fig. 2. The thickness of the polyimide layer 2 is 8um (micrometer) to 12um (micrometer), and preferably, the thickness of the polyimide layer 2 is 10 um.

In order to protect the thin film transistor device 5 and the light emitting device 6 from being burned by laser energy when peeling the substrate from the flexible substrate, a third inorganic thin film 3 and a fourth inorganic thin film 4 are sequentially formed, and the structure is as shown in fig. 2. A third inorganic film 3 is formed on the polyimide layer 2 by plating an inorganic material on the substrate by chemical vapor deposition (CVD for short), followed by photolithography patterning, and etching (such as ICP ion beam assisted radical etching) using the photoresist as a mask to remove unnecessary inorganic substances. The third inorganic film 3 is located on the polyimide layer 2. Similarly, the manufacturing steps of the fourth inorganic thin film 4 are the same as those of the third inorganic thin film 3. The fourth inorganic thin film 4 is located on the third inorganic thin film 3, and the upper surface of the fourth inorganic thin film 4 is used for arranging the thin film transistor device 5. The thickness of the third inorganic film 3 and the fourth inorganic film 4 is 0.1 um-0.2 um. Preferably, the thickness of the third inorganic film 3 and the fourth inorganic film 4 is 0.15um, and the third inorganic film and the fourth inorganic film also have better capability of isolating water vapor and oxygen in a thinner range. The third inorganic thin film and the fourth inorganic thin film may form a transparent reflective layer of a stack to reflect laser light to be irradiated to the thin film transistor device toward the substrate, thereby protecting the thin film transistor device and the light emitting device.

Wherein, the inorganic materials of the third inorganic thin film 3 and the fourth inorganic thin film 4 include, but are not limited to, oxides, nitrides and oxynitrides, and the oxides include, but are not limited to, aluminum oxide, zirconium oxide, zinc oxide, titanium oxide, magnesium oxide, silicon oxide. Nitrides include, but are not limited to, silicon nitride, aluminum nitride, titanium nitride. Oxynitrides include, but are not limited to, silicon oxynitride, aluminum oxynitride, titanium oxynitride.

Preferably, the third inorganic thin film 3 is silicon nitride or silicon oxide.

Preferably, the fourth inorganic thin film 4 is silicon nitride or silicon oxide, and the inorganic material of the fourth inorganic thin film 4 is different from the inorganic material of the third inorganic thin film 3. For example, the fourth inorganic thin film 4 is silicon oxide, and the third inorganic thin film 3 is silicon nitride.

After the third inorganic thin film 3 and the fourth inorganic thin film 4 are manufactured, a thin film transistor device 5 is manufactured, and the structure is shown in fig. 2; the thin film Transistor device 5 includes a Thin Film Transistor (TFT) as a switch for controlling conduction of a wiring. The thin film transistor device 5 includes a gate electrode, an active layer, a source electrode, and a drain electrode. The thin film transistor device 5 may be a bottom gate structure or a top gate structure. Here exemplified by a thin film transistor device 5 of bottom gate structure, the gate electrode being disposed below and an insulating layer being disposed on the gate electrode. An active layer is arranged on the insulating layer and is positioned right above the grid electrode. The source electrode and the drain electrode are arranged on the active layer, and the middle of the source electrode and the drain electrode is exposed out of the middle of the active layer.

When the thin film transistor device 5 is manufactured, a connection line, such as a row scan line, a column scan line, or the like, which serves to connect the thin film transistor and other components, may also be manufactured together.

After the thin film transistor device 5 is manufactured, a light emitting device 6 is manufactured, and the structure is shown in fig. 2; the light emitting device 6 may be an OLED (organic light-emitting diode) device, so that the display panel is an OLED display panel, which is also called an organic electroluminescent display or an organic light-emitting semiconductor. The OLED device includes an anode, a pixel defining layer, a light emitting layer, and a cathode. The anode is connected to a source or a drain of the thin film transistor. The pixel defining layer is disposed on the anode and defines each individual sub-pixel (i.e., light emitting layer) of the display panel, the size of which defines the size of an individual pixel of the display panel. The light emitting layer is disposed in the hole of the pixel defining layer, and the light emitting layer is connected to the anode. The light emitting layer may form sub-pixels of R (RED), G (GREEN), B (BLUE), or W (WHITE) to realize a display function of the panel. The cathode covers the light emitting layer and is located on the pixel defining layer. Typically, the encapsulation structure is disposed on the cathode.

In some embodiments, if it is desired to fabricate an LCD (liquid crystal display) display panel, which is also referred to as a liquid crystal display, then the fabricated light emitting device 6 is an LCD device. Meanwhile, the thin film transistor device 5 and the LCD device are directly fabricated on the substrate without fabricating the polyimide layer 2, the third inorganic thin film 3, and the fourth inorganic thin film 4.

After the light-emitting device 6 is manufactured, a first inorganic film 7 is manufactured, and the structure is shown in fig. 3; specifically, the third inorganic film 3 is formed on the polyimide layer 2 by plating an inorganic material on the substrate by chemical vapor deposition (CVD for short), followed by photolithography patterning, and etching (such as ICP ion beam assisted radical etching) using the photoresist as a mask to remove unnecessary inorganic substances. The first inorganic film 7 covers the light emitting device 6 and the thin film transistor device 5, completely covering the light emitting device 6 and the TFT device. The first inorganic thin film 7 intrudes into the light emitting device 6 and the thin film transistor device 5 as moisture and oxygen from the outside.

Note that the inorganic material of the first inorganic thin film 7 includes, but is not limited to, oxides, nitrides, and oxynitrides, and the oxides include, but are not limited to, aluminum oxide, zirconium oxide, zinc oxide, titanium oxide, magnesium oxide, and silicon oxide. Nitrides include, but are not limited to, silicon nitride, aluminum nitride, titanium nitride. Oxynitrides include, but are not limited to, silicon oxynitride, aluminum oxynitride, titanium oxynitride. Preferably, the first inorganic thin film 7 is silicon nitride or silicon oxide.

In order to prolong the path of the water vapor and the oxygen invading into the interior and further effectively slow down the diffusion speed of the water vapor and the oxygen, after the first inorganic film 7 is manufactured, a buffer layer 8 with a concave-convex structure 81 is manufactured, and the structure is shown in fig. 4 and fig. 6; specifically, the buffer layer 8 is formed on the first inorganic thin film 7 by coating a layer of an organic material onto the substrate by an inkjet printing technique or by plating an organic material onto the substrate by chemical vapor deposition (abbreviated CVD). Then, a photoresist is coated and patterned, that is, the excess organic material is etched using the photoresist as a mask, so that the concave-convex structure 81 is formed on the buffer layer 8. After the concave-convex structure 81 is manufactured, the photoresist is removed. The thickness of buffer layer 8 is 1um ~ 3 um. Preferably, the thickness of the buffer layer 8 is 2 um. Fig. 6 shows a top view of a recess and a protrusion in a package structure.

The concave-convex structure 81 includes a concave region 82 and a convex region 83, as the name suggests, the convex region 83 is the buffer layer 8 with a higher height at the concave-convex structure 81, the region between two convex regions 83 is the concave region 82 (i.e. the convex region 83 is disposed between two concave regions 82), and the concave region 82 is a deep hole. Preferably, the width S of the protruding area 83 is 1mm to 3mm, and preferably, the width S of the protruding area 83 is 2 mm.

In a preferred embodiment, the concave-convex structure 81 is only located on the top side of the buffer layer 8. Since the uneven structure 81 is mainly to prevent cracks from occurring in the inorganic thin film at the side of the display region. Of course, the concave-convex structure 81 may be formed on the entire upper surface of the buffer layer 8, so that the concave-convex structure 81 is provided on the entire surface of the buffer layer 8.

In another preferred embodiment, in order to increase the contact area between the organic thin film and the inorganic thin film, the heights of the plurality of convex regions 83 of the concave-convex structure are gradually decreased from the side edge of the buffer layer to the center of the buffer layer. The difference in height of the raised regions 83 may be etched separately. After the contact area of the organic film and the inorganic film is increased, the moving channels of water vapor and oxygen in the organic film can be prolonged, and the deterioration speed of the light-emitting device is delayed.

Wherein, the cross section of the concave-convex structure concave region 82 can be circular, oval, triangular, rectangular, pentagonal, etc. The shape of the cross section of the relief structure in the direction perpendicular to the substrate may be wave-shaped, saw-toothed, etc.

Among them, the organic material of the buffer layer may be an organic polymer material, and the organic polymer material includes, but is not limited to, acrylic-based polymer (acryl-based polymer), silicon-based polymer (silicon-based polymer), and epoxy-based polymer (epoxy-based polymer), preferably polyamide, polyimide, epoxy-based resin, and the like.

The concave regions 82 of the concave-convex structure 81 are then filled with the nano-repair particles 9 and/or the water-absorbing particles 10, and the structure is shown in fig. 5. In the laser cutting process, the nano repair particles 9 are beneficial to repairing a broken inorganic film, and the risk of device failure caused by cracking during cutting of the inorganic film is reduced. The nano repair particles 9 are not limited to SiNx, SiO2, Al2O3, TiO2, etc., and have a particle size ranging from 50um to 300 um. The nano-repair particles 9 of different particle sizes are suitable for cracks of different sizes. Preferably, the nano-repair particles 9 have a particle size of 50um and/or 200 um. The water absorbing particles 10 can absorb water vapor well, the water absorbing particles 10 are not limited to graphene, aluminum powder and the like, and the particle size of the water absorbing particles 10 is 50um to 300um, preferably, the particle size of the water absorbing particles 10 is 100 um.

It is to be noted that it is possible that each of the depressed regions is provided with the nano-repair particles or the water-absorbing particles, respectively, or the depressed regions are provided with the nano-repair particles and the water-absorbing particles, respectively.

In order to fill in the unevenness of the buffer layer 8, a second inorganic film 11 is formed, and the structure is shown in fig. 5; specifically, the second inorganic thin film 11 is formed on the buffer layer 8 by depositing an inorganic material on the substrate by Chemical Vapor Deposition (CVD), and then performing photolithography patterning, etching (such as ICP ion beam assisted radical etching) using the photoresist as a mask to remove unnecessary inorganic substances. The second inorganic film 11 is located on the buffer layer 8, and the second inorganic film 11 covers the concave-convex structure 81 to fill in the concave-convex of the buffer layer 8. The upper surface of the second inorganic film 11 is flat, so that a new film layer is subsequently superimposed on the package structure.

Note that the inorganic material of the second inorganic thin film 11 includes, but is not limited to, an oxide, a nitride, and an oxynitride, and the oxide includes, but is not limited to, aluminum oxide, zirconium oxide, zinc oxide, titanium oxide, magnesium oxide, and silicon oxide. Nitrides include, but are not limited to, silicon nitride, aluminum nitride, titanium nitride. Oxynitrides include, but are not limited to, silicon oxynitride, aluminum oxynitride, titanium oxynitride. Preferably, the second inorganic thin film 11 is silicon nitride or silicon oxide.

Among the above-mentioned technical scheme, be provided with concave-convex structure on the buffer layer, concave-convex structure has better buffer capacity. When radium-shine cutting base plate, the pressure that concave-convex structure can apply on the buffer layer is dispersed, and cracked inorganic film exists in the depressed area in the wave structure, and every depressed area all is provided with nanometer repair particle and/or absorbs water the granule to play the effect of independent isolated steam and oxygen. The nano repair particles can repair damaged buffer layers, and the water absorbing particles further absorb invading water vapor. This application protects luminescent device through multiple protective structure, increases luminescent device's security, avoids luminescent device to become invalid.

Referring to fig. 2 to 6, the present embodiment further provides a package structure including a substrate and a light emitting device 6. The light emitting device 6 is disposed on the substrate 1. The encapsulation material further comprises a first inorganic film 7 and a buffer layer 8. The first inorganic film 7 covers the light emitting device 6. The first inorganic film 7 covers the light emitting device 6. The buffer layer 8 covers the first inorganic thin film 7, a concave-convex structure 81 is arranged on the buffer layer 8, the concave-convex structure 81 is at least positioned on the top side edge of the buffer layer 8, and the concave area 82 of the concave-convex structure 81 is filled with the nano-repair particles 9 and/or the water-absorbing particles 10.

Note that the thickness of the buffer layer 8 is 1um to 3 um. Preferably, the thickness of the buffer layer 8 is 2 um. The organic material of the buffer layer 8 may be an organic polymer material including, but not limited to, acrylic-based polymer (acryl-based), silicon-based polymer (silicon-based) and epoxy-based polymer (epoxy-based), preferably polyamide, polyimide, epoxy-based resin, etc.

The concave-convex structure 81 comprises a concave area 82 and a convex area 83, and the structure is shown in fig. 4. As the name implies, the raised regions 83 are buffer layers 8 with a higher height at the concave-convex structure 81, the region between two raised regions 83 is the recessed region 82 (i.e. the raised regions 83 are disposed between two recessed regions 82), and the recessed regions 82 are deep holes. Preferably, the width S of the protruding area 83 is 1mm to 3mm, and preferably, the width S of the protruding area 83 is 2 mm.

In a preferred embodiment, the concave-convex structure 81 is only located on the top side of the buffer layer 8. Since the uneven structure 81 is mainly to prevent cracks from occurring in the inorganic thin film at the side of the display region. Of course, the concave-convex structure 81 may be formed on the entire upper surface of the cushioning layer 8, so that the concave-convex structure 81 is disposed on the entire surface (the side and the middle) of the cushioning layer 8.

It should be noted that, in the laser cutting process, the nano repair particles 9 are beneficial to repair a broken inorganic thin film, so as to reduce the risk of device failure caused by cracking during cutting of the inorganic thin film, and the structure is shown in fig. 5. The nano repair particles 9 are not limited to SiNx, SiO2, Al2O3, TiO2, etc., and have a particle size ranging from 50um to 300 um. The nano-repair particles 9 of different particle sizes are suitable for cracks of different sizes. Preferably, the nano-repair particles 9 have a particle size of 50um and/or 200 um. The water-absorbing particles 10 can absorb water vapor well, and the structure is shown in fig. 5, the water-absorbing particles 10 are not limited to graphene, aluminum powder, etc., and the particle size of the water-absorbing particles 10 is 50um to 300um, preferably, the particle size of the water-absorbing particles 10 is 100 um.

It is noted that the light emitting device 6 may be an OLED (organic light-emitting diode) device, so that the display panel is an OLED display panel, and the structure is shown in fig. 2. An OLED (organic light-emitting diode) is also called an organic electroluminescent display or an organic light-emitting semiconductor. The OLED device includes an anode, a pixel defining layer, a light emitting layer, and a cathode. The anode is connected to a source or a drain of the thin film transistor. The pixel defining layer is disposed on the anode and defines each individual sub-pixel (i.e., light emitting layer) of the display panel, the size of which defines the size of an individual pixel of the display panel. The light emitting layer is disposed in the hole of the pixel defining layer, and the light emitting layer is connected to the anode. The light emitting layer may form sub-pixels of R (RED), G (GREEN), B (BLUE), or W (WHITE) to realize a display function of the panel. The cathode covers the light emitting layer and is located on the pixel defining layer. Typically, the encapsulation structure is disposed on the cathode.

In some embodiments, if it is desired that the display panel is an LCD (liquid crystal display) display panel, also referred to as a liquid crystal display, then the light emitting device 6 is an LCD device. While only the thin film transistor device 5 and the LCD device are directly provided on the substrate without providing the polyimide layer 2, the third inorganic thin film 3, and the fourth inorganic thin film 4.

Note that the first inorganic film 7 completely covers the light-emitting device 6 and the TFT device, and the structure is shown in fig. 3. The first inorganic thin film 7 intrudes into the light emitting device 6 and the thin film transistor device 5 as moisture and oxygen from the outside. The inorganic material of the first inorganic thin film 7 includes, but is not limited to, oxides, nitrides, and oxynitrides, and the oxides include, but are not limited to, aluminum oxide, zirconium oxide, zinc oxide, titanium oxide, magnesium oxide, and silicon oxide. Nitrides include, but are not limited to, silicon nitride, aluminum nitride, titanium nitride. Oxynitrides include, but are not limited to, silicon oxynitride, aluminum oxynitride, titanium oxynitride. Preferably, the first inorganic thin film is silicon nitride or silicon oxide.

In order to fill the unevenness of the buffer layer, a second inorganic thin film 11 is further included. The second inorganic film 11 is located on the buffer layer, and the second inorganic film 11 covers the concave-convex structure, and the structure is shown in fig. 5. The upper surface of the second inorganic film 11 is flat, so that a new film layer is subsequently superimposed on the package structure. The inorganic material of the second inorganic thin film 11 includes, but is not limited to, oxides, nitrides, and oxynitrides, and the oxides include, but are not limited to, aluminum oxide, zirconium oxide, zinc oxide, titanium oxide, magnesium oxide, and silicon oxide. Nitrides include, but are not limited to, silicon nitride, aluminum nitride, titanium nitride. Oxynitrides include, but are not limited to, silicon oxynitride, aluminum oxynitride, titanium oxynitride. Preferably, the second inorganic thin film 11 is silicon nitride or silicon oxide.

Since the display panel is an OLED display panel, it further includes a polyimide layer 2 and a thin film transistor device 5. The polyimide layer 2 is disposed on the substrate 1 to form a flexible substrate, and the structure is shown in fig. 2. The thickness of the polyimide layer 2 is 8um (micrometer) to 12um (micrometer), and preferably, the thickness of the polyimide layer 2 is 10 um.

The thin film transistor device 5 is arranged on the polyimide layer 2, and the structure is shown in fig. 2. The thin film transistor device 5 includes a Thin Film Transistor (TFT) as a switch for controlling conduction of a wiring. The thin film transistor device 5 includes a gate electrode, an active layer, a source electrode, and a drain electrode. The thin film transistor device 5 may be a bottom gate structure or a top gate structure. Here exemplified by a thin film transistor device 5 of bottom gate structure, the gate electrode being disposed below and an insulating layer being disposed on the gate electrode. An active layer is arranged on the insulating layer and is positioned right above the grid electrode. The source electrode and the drain electrode are arranged on the active layer, and the middle of the source electrode and the drain electrode is exposed out of the middle of the active layer.

The thin film transistor device 5 further includes connection lines such as row scan lines, column scan lines, and the like, which function to connect the thin film transistors with other components.

In order to protect the thin film transistor device 5 and the light emitting device 6 from being burned by laser energy when the substrate is peeled off from the flexible substrate, a third inorganic thin film 3 and a fourth inorganic thin film 4 are further included, and the structure is shown in fig. 2. The third inorganic film 3 is located on the polyimide layer 2. The fourth inorganic thin film 4 is located on the third inorganic thin film 3, and the upper surface of the fourth inorganic thin film 4 is used for arranging the thin film transistor device 5. The thickness of the third inorganic film 3 and the fourth inorganic film 4 is 0.1 um-0.2 um. Preferably, the thickness of the third inorganic film 3 and the fourth inorganic film 4 is 0.15um, and the third inorganic film and the fourth inorganic film also have better capability of isolating water vapor and oxygen in a thinner range. The third inorganic thin film and the fourth inorganic thin film may form a transparent reflective layer of a stack to reflect laser light to be irradiated to the thin film transistor device toward the substrate, thereby protecting the thin film transistor device and the light emitting device.

It should be noted that, although the above embodiments have been described herein, the scope of the present invention is not limited thereby. Therefore, based on the innovative concept of the present invention, the changes and modifications of the embodiments described herein, or the equivalent structure or equivalent process changes made by the contents of the specification and the drawings of the present invention, directly or indirectly apply the above technical solutions to other related technical fields, all included in the scope of the present invention.

Claims

1. A packaging structure comprises a substrate and a light-emitting device, wherein the light-emitting device is arranged on the substrate, and the packaging structure is characterized by further comprising a first inorganic film and a buffer layer;

the first inorganic thin film covers the light emitting device;

2. A package structure according to claim 1, wherein the cross-section of the relief structure has a wave shape.

3. The package structure of claim 1, further comprising a second inorganic film;

4. The package structure of claim 1, further comprising a polyimide layer and a thin film transistor device;

the polyimide layer is disposed on the substrate;

the thin film transistor device is disposed on the polyimide layer;

5. The encapsulation structure according to claim 4, further comprising a third inorganic film and a fourth inorganic film;

the third inorganic film is positioned on the polyimide layer;