CN213367032U - Laser emission module - Google Patents
Laser emission module Download PDFInfo
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- CN213367032U CN213367032U CN202023000433.7U CN202023000433U CN213367032U CN 213367032 U CN213367032 U CN 213367032U CN 202023000433 U CN202023000433 U CN 202023000433U CN 213367032 U CN213367032 U CN 213367032U
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- phase modulation
- collimating mirror
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Abstract
The utility model discloses a laser emission module belongs to laser emission module technical field, include the base plate and locate photon chip, collimating mirror, interference light filter, pyramid speculum at base plate top, photon chip includes phase modulation district, waveguide mode selection district and gain amplification district, the both sides in waveguide mode selection district are located respectively in phase modulation district and gain amplification district, one side in waveguide mode selection district is kept away from in the phase modulation district is located to the collimating mirror, interference light filter locates one side that phase modulation district was kept away from to the collimating mirror, pyramid speculum locates one side that interference light filter kept away from the collimating mirror.
Description
Technical Field
The utility model relates to a laser emission module especially relates to a laser emission module, belongs to laser emission module technical field.
Background
The laser radar is an important sensing device in the fields of automatic driving, space surveying and mapping, Internet of vehicles, industrial manufacturing and the like, and the detection mode of the laser radar is divided into direct detection and coherent detection. The laser radar system for direct detection is simple, but the detection mechanism only responds to the light intensity, so that the problems of serious interference caused by ambient light, short detection distance and the like exist, and coherent detection has higher signal dynamic range and signal sensitivity, has the advantages of long distance, high precision, interference resistance and the like, and is widely regarded.
The laser radar based on coherent detection has extremely high requirements on various characteristics of a laser emission module, and the prior art still has the following problems: the prior solution mainly focuses on using an optical fiber type narrow linewidth laser, the optical fiber type narrow linewidth laser has poor vibration resistance and temperature change resistance, does not have low-cost linear frequency modulation capability, and is often large in size, and the prior solution is beam scanning capability.
The patent disclosed as US20150071315a1 in the prior art realizes the frequency modulation capability through an optical fiber device, the system is complex and expensive, and the practicability under the severe environment is not achieved, and then the patent scheme with the patent number of US8605760 uses a silicon micro resonator to realize the external cavity control, which is beneficial to the narrowing of the laser line width and the improvement of the long-distance detection capability. However, the combination of a plurality of coupling mirrors and lenses is used in the scheme, which is not favorable for production and manufacturing and is expensive, and a laser emission module is designed for optimizing the problems.
SUMMERY OF THE UTILITY MODEL
The main objective of the present invention is to provide a laser emitting module, which has a smaller package size.
The utility model provides a module has higher anti vibration performance.
The utility model provides a module has convenient linear sweep frequency ability, higher sweep frequency speed.
The utility model provides a module can conveniently carry out space beam scanning.
The purpose of the utility model can be achieved by adopting the following technical scheme:
the utility model provides a laser emission module, includes the base plate and locates photon chip, collimating mirror, interference filter, the pyramid speculum at base plate top, the photon chip includes phase modulation district, waveguide mode selection district and gain amplification district, the both sides in waveguide mode selection district are located respectively in phase modulation district and gain amplification district, the collimating mirror is located one side that waveguide mode selection district was kept away from in the phase modulation district, interference filter locates one side that phase modulation district was kept away from to the collimating mirror, the pyramid speculum is located one side that interference filter kept away from the collimating mirror.
Preferably, a thermistor and a coupling mirror are arranged at the top of the substrate, the thermistor is mounted on the substrate at a position close to one side of the photonic chip, and the coupling mirror is mounted at a position of the photonic chip at a position far away from one side of the collimating mirror.
Preferably, an optical phased array chip is mounted on the substrate, the optical phased array chip is mounted on one side, away from the photonic chip, of the coupling mirror, and a silicon refrigerator is mounted at the bottom of the substrate.
Preferably, the bottom of the photonic chip and the bottom of the optical phased array chip are both provided with heat sinks.
The utility model has the advantages of:
the utility model provides a pair of laser emission module, the utility model provides a module has smaller encapsulated volume.
The utility model provides a module has higher anti vibration performance.
The utility model provides a module has convenient linear sweep frequency ability, higher sweep frequency speed.
The utility model provides a module can conveniently carry out space beam scanning.
Drawings
FIG. 1 is a drawing of prior art publication US20150071315A 1;
FIG. 2 is a drawing of a prior art publication US 8605760;
fig. 3 is a side view of a preferred embodiment of a laser emitting module according to the present invention;
fig. 4 is a top view of a preferred embodiment of a laser transmitter module according to the present invention.
In the figure: in the figure: the device comprises a 1-pyramid reflector, a 2-interference filter, a 3-collimating mirror, a 4-photon chip, a 5-waveguide mode selection area, a 6-phase modulation area, a 7-gain amplification area, an 8-thermistor, a 9-coupling mirror, a 10-optical phased array chip, an 11-silicon refrigerator, a 12-substrate and a 13-heat sink.
Detailed Description
In order to make the technical solutions of the present invention clearer and clearer for those skilled in the art, the present invention will be described in further detail with reference to the following embodiments and the accompanying drawings, but the embodiments of the present invention are not limited thereto.
As shown in fig. 3-4, the laser emission module provided in this embodiment includes a substrate 12, a photonic chip 4 disposed on the top of the substrate, a collimator 3, an interference filter 2, and a pyramid reflector 1, where the photonic chip 4 includes a phase modulation region 6, a waveguide mode selection region 5, and a gain amplification region 7, the phase modulation region 6 and the gain amplification region 7 are respectively disposed on two sides of the waveguide mode selection region 5, the collimator 3 is disposed on one side of the phase modulation region 6 away from the waveguide mode selection region 5, the interference filter 2 is disposed on one side of the collimator 3 away from the phase modulation region 6, and the pyramid reflector 1 is disposed on one side of the interference filter 2 away from the collimator 3.
The phase modulation region 6 functions to change an additional phase of light passing therethrough, the carrier concentration can be changed by an electric field intensity thereon, thereby changing an equivalent refractive index of the phase modulation region 6, the waveguide mode selection 5 is a short waveguide adapted to transmission of a fundamental mode, and functions to improve diffraction attenuation of a higher-order transverse mode, thereby suppressing generation of the higher-order transverse mode, and the gain amplification 7 is a tapered gain section to provide an oscillation gain for the laser.
The left light-emitting surface of the photonic chip 4 is plated with a high-transmittance film, the right light-emitting surface of the photonic chip 4 is plated with a reflecting film with a certain low reflectivity, light emitted by the left end of the photonic chip 4 is collimated by a collimating mirror 3, the collimated light passes through an interference optical filter 2 to be selected, and emergent light is reflected by an angle cone reflecting mirror 1 and then sequentially reflected back to the interference optical filter 2, the collimating mirror 3 and the photonic chip 4 in the original direction.
In this embodiment, a thermistor 8 and a coupling mirror 9 are disposed on the top of the substrate 12, the thermistor 8 is mounted on the substrate 12 near one side of the photonic chip 4, the thermistor 8 is disposed on the substrate, the side of the photonic chip 4 is used for sensing the temperature on the substrate 12, the coupling mirror 9 is mounted on the side of the photonic chip 4 far away from the collimating mirror 3, and the coupling mirror 9 is disposed beside the right side of the photonic chip 4 after light is emitted, so that the diffused light beams can be converged and coupled to the optical phased array chip 10 beside the coupling mirror.
In the present embodiment, the optical phased array chip 10 is mounted on the substrate 12, the optical phased array chip 10 is mounted on the top of the substrate 12 at the end far away from the photonic chip 4, and the silicon refrigerator 11 is mounted on the bottom of the substrate 12 for controlling the system to keep a constant temperature.
In this embodiment, the bottom of both the photonic chip 4 and the optical phased array chip 10 are mounted with a heat sink 13.
Above, only the further embodiments of the present invention are shown, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can replace or change the technical solution and the concept of the present invention within the protection scope of the present invention.
Claims (4)
1. The utility model provides a laser emission module which characterized in that: including base plate (12) and locate photon chip (4), collimating mirror (3), interference filter (2), pyramid speculum (1) at base plate top, photon chip (4) are including phase modulation district (6), waveguide mode selection district (5) and gain amplifier region (7), the both sides in waveguide mode selection district (5) are located respectively in phase modulation district (6) and gain amplifier region (7), one side that waveguide mode selection district (5) were kept away from in phase modulation district (6) is located in collimating mirror (3), one side that phase modulation district (6) were kept away from in collimating mirror (3) is located in interference filter (2), one side that interference filter (2) kept away from collimating mirror (3) is located in pyramid speculum (1).
2. The laser transmitter module as claimed in claim 1, wherein: the top of base plate (12) is equipped with thermistor (8) and coupling mirror (9), thermistor (8) are installed be close to on base plate (12) one side department of photon chip (4), coupling mirror (9) are installed photon chip (4) keep away from one side department of collimating mirror (3).
3. The laser transmitter module as claimed in claim 2, wherein: an optical phased array chip (10) is installed on the substrate (12), the optical phased array chip (10) is installed on one side, away from the photonic chip (4), of the coupling mirror (9), and a silicon refrigerator (11) is installed at the bottom of the substrate (12).
4. The laser transmitter module as claimed in claim 3, wherein: and heat sinks (13) are arranged at the bottoms of the photonic chip (4) and the optical phased array chip (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023000433.7U CN213367032U (en) | 2020-12-14 | 2020-12-14 | Laser emission module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023000433.7U CN213367032U (en) | 2020-12-14 | 2020-12-14 | Laser emission module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213367032U true CN213367032U (en) | 2021-06-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023000433.7U Active CN213367032U (en) | 2020-12-14 | 2020-12-14 | Laser emission module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213367032U (en) |
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2020
- 2020-12-14 CN CN202023000433.7U patent/CN213367032U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 518000 unit 1501 1502 1503 1509 1510 1511 1512, block C, 15 / F, Baoneng Science Park, Qinghu village, Qinghu community, Longhua street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Micro source Photonics (Shenzhen) Technology Co.,Ltd. Address before: 518000 unit BC, block a, 6 / F, building 9, Baoneng Science Park, Qinghu village, Qinghu community, Longhua street, Longhua District, Shenzhen City, Guangdong Province Patentee before: Micro source Photonics (Shenzhen) Technology Co.,Ltd. |