CN213302760U - Lithographic system - Google Patents

Abstract

The utility model discloses a photoetching system. The photoetching system comprises a first dust-free cavity, a photoresist coating device arranged in the first dust-free cavity, a second dust-free cavity, a curing device arranged in the second dust-free cavity, a developing device arranged in the second dust-free cavity, an etching device arranged in the second dust-free cavity and a trolley. The utility model provides a photoetching system can be used for avoiding the metal gyro wheel to be adhered by the pollution sources in the environment through "first dustless cavity and the dustless cavity of second" technical scheme to avoid the metal gyro wheel to be polluted by the pollution sources in the environment, and make the manufacturing yield of metal gyro wheel promote by a wide margin.

Description

Lithographic system

Technical Field

The utility model relates to a lithography system especially relates to a dustless lithography system.

Background

The existing roller photoresist coating equipment often needs to transfer a metal roller to the next stage of process equipment (such as roller developing equipment and roller photoetching equipment) after a photoresist layer is arranged on the outer surface of the metal roller. However, in the transferring process of the metal roller, the metal roller is often contaminated by a pollution source in the environment, so that the yield of the metal roller in the subsequent process is greatly reduced.

Therefore, how to overcome the above-mentioned drawbacks by improving the structural design has become one of the important issues to be solved by the industry.

SUMMERY OF THE UTILITY MODEL

An embodiment of the present invention provides a photolithography system, which can effectively improve the defects possibly generated by the conventional roller photolithography system.

One of the embodiments of the present invention discloses a lithography system for forming an imprinting layer on an outer surface of a metal roller, the lithography system comprising: a first clean chamber for preventing the metal roller from being adhered by pollution sources in the environment, and the first clean chamber comprises a first roller fixing device for clamping and rotating the metal roller; a photoresist coating device arranged in the first dust-free cavity and used for coating a photoresist layer on the outer surface of the metal roller; a second dust-free chamber for preventing the metal roller from being adhered by pollution sources in the environment, wherein the second dust-free chamber comprises a second roller fixing device for clamping and rotating the metal roller; the curing device is arranged in the second dust-free cavity and is used for irradiating a patterned light source on the photoresist layer so as to form a plurality of exposure patterns on one side of the photoresist layer; the developing device is arranged in the second dust-free cavity and is used for removing the materials of the exposure patterns on the photoresist layer and forming a patterned photoresist layer; and the etching equipment is arranged in the second dust-free cavity and is used for etching the patterned photoresist layer in an anisotropic etching mode to form the imprinting layer.

Preferably, the etching apparatus further comprises a first etching mechanism, wherein the first etching mechanism can use the imprinting layer as a mask and etch the outer surface of the metal roller by a non-isotropic etching means, so as to form a plurality of imprinting patterns on the outer surface.

Preferably, the photolithography system further comprises a cart for moving the metal roller from the first clean chamber into the second clean chamber.

Preferably, the etching apparatus further comprises a second etching mechanism, the second etching mechanism being operable to form a plurality of the embossed patterns on the outer surface, such that the depth of any one of the embossed patterns is between 0.2 microns and 0.6 microns, and the width of any one of the embossed patterns is between 0.3 microns and 0.8 microns.

Preferably, the developing apparatus includes: a wetting device for accommodating a developer; and a moving device for moving the second roller fixing device and the soaking device relatively so that the soaking device can be used for locally soaking the photoresist layer with the developer contained by the soaking device.

Preferably, the developing apparatus further comprises a speed control mechanism electrically connected to the second roller fixing device, and the developing apparatus is configured to selectively rotate the metal roller by the second roller fixing device at a wetting speed and a spin-drying speed; the speed control mechanism can be used for enabling the second roller fixing device to rotate the metal roller at the infiltration speed to enable the photoresist layer to be evenly infiltrated by the developer when the photoresist layer is infiltrated by the developer in the infiltration device, so that part of the photoresist layer is dissolved in the developer to further form the patterned photoresist layer.

Preferably, the developing apparatus further comprises a rinsing device for rinsing the developer distributed on the patterned photoresist layer with water when the patterned photoresist layer leaves the developer in the immersion device.

Preferably, the immersion device further comprises a cover, and the cover is used to block the used water and the used developer from flowing back into the immersion device when the rinsing device is used to rinse the developer distributed on the patterned photoresist layer.

Preferably, the speed control mechanism is operable to control the second roller fixture to rotate the metal roller at the wetting speed of between 1 rpm and 120 rpm.

Preferably, the speed control mechanism is operable to control the second roller fixture to rotate the metal roller at the spin speed of between 2900 rpm and 4500 rpm.

The utility model discloses an one of them beneficial effect lies in, the utility model provides a lithography system, it can pass through "first dustless cavity and the dustless cavity of second is used for avoiding the metal gyro wheel is adhered by the pollution sources in the environment" and "photoresistance coating device set up in the first dustless cavity, and solidification equipment developing device and etching equipment set up in the dustless cavity of second technical scheme, in order to avoid the metal gyro wheel is polluted by the pollution sources in the environment, and makes the manufacturing yield of metal gyro wheel promotes by a wide margin.

For a better understanding of the features and technical content of the present invention, reference should be made to the following detailed description and accompanying drawings, which are provided for reference and illustration purposes only and are not intended to limit the present invention.

Drawings

FIG. 1 is a schematic diagram of a lithography system according to a first embodiment of the present invention.

Fig. 2 is a schematic view of a photoresist coating apparatus according to a first embodiment of the present invention.

Fig. 3A is a dynamic schematic view of the curing device irradiating the metal roller according to the first embodiment of the present invention.

Fig. 3B is a schematic view of the curing device irradiating the photoresist layer according to the first embodiment of the present invention.

Fig. 4 is a first dynamic diagram of a developing apparatus according to a first embodiment of the present invention.

Fig. 5A is a second dynamic schematic diagram of the developing device according to the first embodiment of the present invention.

Fig. 5B is a schematic view of the developing apparatus according to the first embodiment of the present invention removing the exposure pattern.

Fig. 6 is a third dynamic diagram of the developing device according to the first embodiment of the present invention.

Fig. 7 is a fourth dynamic view of the developing device according to the first embodiment of the present invention.

FIG. 8 is a dynamic diagram illustrating the etching of a patterned photoresist layer by an etching apparatus according to a first embodiment of the present invention.

Fig. 9A is a schematic diagram illustrating an operation of forming an imprinting layer by using an etching apparatus according to a first embodiment of the present invention.

Fig. 9B is a schematic diagram illustrating an operation of forming an imprinted pattern on a surface of a metal roller by using an etching apparatus according to a second embodiment of the present invention.

Fig. 9C is a schematic partial cross-sectional view of a metal roller after removing an imprinting layer according to a second embodiment of the present invention.

Detailed Description

The following is a description of the embodiments of the present invention disclosed in the "lithography system" with reference to specific embodiments, and those skilled in the art can understand the advantages and effects of the present invention from the disclosure of the present invention. The utility model discloses the concrete embodiment of accessible other differences is implemented or is used, and each item detail in this specification also can be based on different viewpoints and application, does not deviate from the utility model discloses a carry out various modifications and changes under the design. The drawings of the present invention are merely schematic illustrations, and are not drawn to scale, but are described in advance. Furthermore, as will be described in greater detail below with reference to and as illustrated in the accompanying drawings, it is to be noted that the following description is given for the sole purpose of emphasizing that the associated description is in large part represented in the accompanying drawings, and that reference is not made to these specific drawings in the following description. The following embodiments will further explain the related art of the present invention in detail, but the disclosure is not intended to limit the scope of the present invention.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are used primarily to distinguish one element from another element or from one signal to another signal. In addition, the term "or" as used herein should be taken to include any one or combination of more of the associated listed items as the case may be.

[ first embodiment ]

Referring to fig. 1 to 9A, which are first exemplary embodiments of the present invention, it should be noted that the drawings corresponding to the present embodiment and the related numbers and shapes mentioned above are only used for describing the embodiments of the present invention, so as to facilitate understanding of the contents of the present invention, but not to limit the scope of the present invention.

As shown in fig. 1-9A, a first embodiment of the present invention provides a lithography system 100 for forming an imprinting layer 300 "on an outer surface 201 of a metal roller 200. It should be noted that the metal roller 200 defines a central axis C, and in this embodiment, the length of the metal roller 200 is 1 meter to 2 meters, and the diameter of the cross section of the metal roller 200 is 10 cm to 45 cm. The metal roller 200 is preferably made of stainless steel, but the present invention is not limited thereto. For example, the metal roller 200 may be made of tin, lead, zinc, aluminum, copper, brass, iron, nickel, cobalt, tungsten, chromium, or a metal having a hardness greater than that of chromium, and the length and cross section of the metal roller 200 may be designed as desired.

As shown in fig. 1, the photolithography system 100 includes a first clean chamber 1, a photoresist coating device 2 disposed in the first clean chamber 1, a second clean chamber 3, a curing device 4 disposed in the second clean chamber 3, a developing device 5 disposed in the second clean chamber 3, an etching device 6 disposed in the second clean chamber 3, and a cart 7, but the invention is not limited thereto. For example, in other embodiments not shown in the present disclosure, the lithography system 100 may not include the cart 7.

It should be noted that the cart 7 is used to move the metal roller 200 from the first clean room 1 into the second clean room 3. More specifically, in the present embodiment, the cart 7 includes a cart body 71 and a dust-proof sleeve 72, the cart body 71 is movably disposed on a ground, and the cart body 71 includes a supporting bracket 711 for supporting the metal roller 200. The dust-proof kit 72 is mounted on the supporting frame 711, and the dust-proof kit 72 defines a dust-proof space 721 with a predetermined cleanliness class (e.g., federal standard classification 1-federal standard classification 100), the dust-proof space 721 can be used for accommodating the metal roller 200, so that the cart body 71 can be used for conveying the metal roller 200 in an environment with the predetermined cleanliness class.

It should be noted that the first clean room 1 and the second clean room 3 are used to prevent the metal roller 200 from being adhered by the environmental pollution source, and the first clean room 1 and the second clean room 3 respectively include a first roller fixing device 11 and a second roller fixing device 31. The first clean room 1 and the second clean room 3 are classified according to federal standards 1-100, and the first roller fixing device 11 and the second roller fixing device 31 can be used to clamp and rotate the metal roller 200.

For convenience of description and understanding of the technical contents of the second roller fixing device 31, other devices (such as the photoresist coating device 2) will be described, and then the details of the second roller fixing device 31 will be described together with the description of the developing apparatus 5.

As shown in fig. 2, the photoresist coating apparatus 2 is used for coating a photoresist layer 300 on the outer surface 201 of the metal roller 200. The photoresist coating device 2 is a spray coating device, but the present invention is not limited thereto. The photoresist coating device 2 may be a wire bar coating device, a double-side forming coating device, a closed blade coating device, or other coating devices using different coating techniques.

It should be noted that the photoresist layer 300 is made of a positive photoresist in this embodiment, which is mainly made of phenolic resin (phenolic-formaldehyde resin), but the present invention is not limited thereto. For example, the photoresist layer 300 may also be made of a positive photoresist material such as Epoxy resin (Epoxy resin).

Specifically, when the photoresist coating device 2 sprays the positive photoresist on the outer surface 201 of the metal roller 200, the metal roller 200 is held by the first roller fixing device 11 and rotated, so that the outer surface 201 is uniformly sprayed by the positive photoresist, and the photoresist layer 300 disposed on the outer surface 201 is formed. In the embodiment, the photoresist coating apparatus 2 includes a nozzle located adjacent to the metal roller 200 for spraying the photoresist on the outer surface 201 in a movable manner, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the photoresist coating apparatus 2 may also include a plurality of nozzles.

As shown in fig. 3A and 3B, the curing device 4 is used to irradiate a patterned light source 4L onto the photoresist layer 300, so that a plurality of exposure patterns 301 are formed on one side of the photoresist layer 300. In the present embodiment, the curing device 4 includes a light source (e.g., an LED or a laser diode) and a mask, and the light generated by the light source can penetrate the mask to form the patterned light source 4L, but the invention is not limited thereto. For example, the patterned light source 4L can also be formed by a laser source or an ultraviolet LED focused by a micro-prism.

Specifically, when the curing device 4 irradiates one side of the photoresist layer 300 with the patterned light source 4L, the metal roller 200 is clamped and rotated by the second roller fixing device 31, so that the photoresist layer 300 is uniformly irradiated by the patterned light source 4L, and a plurality of exposure patterns 301 are formed on one side of the photoresist layer 300.

As shown in fig. 4, the wetting device 51 is used for accommodating a developer R, and the wetting device 51 includes a cover 511, where the cover 511 is used for protecting the developer R disposed in the wetting device 51 from being polluted by the external environment. In more detail, the cover 511 includes two combination surfaces that can be combined with each other, the two combination surfaces are respectively disposed at any two sides of the infiltration apparatus 51, and the two combination surfaces can be movably combined together, so that the opening of the infiltration apparatus 51 for the metal roller 200 to enter is closed or opened, but the present invention is not limited thereto. For example. In other embodiments not shown in the present invention, the cover 511 may also include a roller shutter disposed on any side of the soaking device 51, and the roller shutter may be spread out to close or open the opening of the soaking device 51 for the metal roller 200 to enter.

The type and ratio of the constituent materials of the developer R correspond to those of the photoresist layer 300. In other words, the developer R includes a composition material type and a composition material ratio that vary according to the composition material type and ratio of the photoresist layer 300. In the present embodiment, the developer R includes an alkaline aqueous solution in which tetramethylammonium hydroxide (TMAH) is dissolved, but the present invention is not limited thereto. For example, in other embodiments, the aqueous base solution in which tetramethylammonium hydroxide (TMAH) is dissolved may be replaced with an aqueous base solution in which tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), or tetrabutylammonium hydroxide (TBAH) is dissolved.

As shown in fig. 5A and 5B, the developing apparatus 5 is used to remove the material of the exposed patterns 301 on the photoresist layer 300 and form a patterned photoresist layer 300'. In more detail, the developing device 5 includes a wetting device 51 disposed at a distance from the metal roller 200, a moving device 52 connected to the wetting device 51, a speed control mechanism 53 mounted on the second roller fixing device 31, and a washing device 54 disposed at a distance from the metal roller 200.

As shown in fig. 5A, the moving device 52 is used to move the second roller fixing device 31 and the wetting device 51 relatively, so that the wetting device 51 can be used to partially wet the photoresist layer 300 with the developer R contained therein. In more detail, in the embodiment, the moving device 52 is used for moving the soaking device 51 and relatively moving the soaking device 51 toward the second roller fixing device 31, but the invention is not limited thereto. For example, in another embodiment not shown in the present invention, the moving device 52 may be used to move the second roller fixing device 31 and make the second roller fixing device 31 move relatively to the soaking device 51.

The moving device 52 includes a lifting mechanism 521 and a supporting mechanism 522 mounted on the lifting mechanism 521. The supporting mechanism 522 is used for supporting the bottom of the wetting apparatus 51, and the lifting mechanism 521 is used for moving the wetting apparatus 51 along a direction perpendicular to the central axis C of the metal roller 200.

As shown in fig. 5A to 6, the speed control mechanism 53 is used to make the second roller fixing device 31 selectively rotate the metal roller 200 at a wetting speed S1 and a spin-drying speed S2. In more detail, the speed control mechanism 53 can be used to control the second roller fixture 31 to rotate the metal roller 200 at the soaking speed S1 between 1 to 120 Revolutions Per Minute (RPM), and the speed control mechanism 53 can also be used to control the second roller fixture 31 to rotate the metal roller 200 at the spin-drying speed S2 between 2900 to 4500 Revolutions Per Minute (RPM).

It should be noted that, as shown in fig. 5A, the speed control mechanism 53 can be used to make the second roller fixing device 31 rotate the metal roller 200 at the wetting speed S1 to uniformly wet the photoresist layer 300 with the developer R when the photoresist layer 300 is wetted by the developer R in the wetting device 51, so that a portion of the photoresist layer 300 is dissolved in the developer R to form the patterned photoresist layer 300'.

As shown in fig. 6, the rinsing device 54 is used to rinse the developer R distributed on the patterned photoresist layer 300 'with water when the patterned photoresist layer 300' leaves the developer R in the immersion device 51. Wherein, when the rinsing device 54 rinses the developer R distributed on the patterned photoresist layer 300' with water, the speed control mechanism 53 controls the second roller fixing device 31 to rotate the metal roller 200 at the wetting speed S1.

It should be noted that, when the rinsing device 54 is used to rinse the developer R distributed on the patterned photoresist layer 300', the cover 511 of the immersion device 51 will close the immersion device 51, and prevent the used water and the used developer R from flowing back into the immersion device 51.

It should be noted that, as shown in fig. 7, when the patterned photoresist layer 300 ' leaves the developer R in the wetting device 51 and the rinsing device 54 finishes rinsing the patterned photoresist layer 300 ', the speed control mechanism 53 can control the second roller fixing device 31 to rotate the metal roller 200 at the spin-drying speed S2 and separate water remaining in the patterned photoresist layer 300 '.

As shown in FIGS. 8-9A, the etching apparatus 6 is used to etch the patterned photoresist layer 300' by anisotropic etching (e.g., plasma etching) to form the imprint layer 300 ″. In more detail, as shown in fig. 9A, the etching apparatus 6 comprises a first etching mechanism 61 and a second etching mechanism 62, and the first etching mechanism 61 can be used to etch the patterned photoresist layer 300' to form the imprinting layer 300 ″. The imprinting layer 300 "includes a plurality of hollow portions 301" and a plurality of shielding portions 302 ", the plurality of hollow portions 301" are used to expose a portion of the outer surface 201, and the plurality of shielding portions 302 "shield a portion of the outer surface 201.

It should be noted that, due to the feature that the anisotropic etching manner has a controllable etching direction, the patterned photoresist layer 300' can be etched substantially along a normal direction to the outer surface 201 of the metal roller 200, so that the correctness of the shapes of the plurality of hollowed-out portions 301 "and the plurality of shielding portions 302" of the imprinting layer 300 "can be ensured, and the chance of generating defects in the imprinting layer 300" is reduced.

[ second embodiment ]

Referring to fig. 9B and 9C, which are the second embodiment of the present invention, it should be noted that this embodiment is similar to the first embodiment, and therefore the same parts of the two embodiments are not repeated; in addition, the related numbers and shapes of the embodiments mentioned in the drawings are only used for describing the embodiments of the present invention in detail, so as to facilitate the understanding of the contents of the present invention, and are not used to limit the protection scope of the present invention.

As shown in fig. 9B, the second etching mechanism 62 may etch the outer surface 201 of the metal roller 200 by anisotropic etching using the imprinting layer 300 "as a mask, so as to form a plurality of imprinting patterns 303" on the outer surface 201. As shown in fig. 9C, the second etching mechanism 62 can be used to make the depth d of any one of the embossed patterns 303 "be between 0.2 micrometers and 0.6 micrometers, make the width w of any one of the embossed patterns 303" be between 0.3 micrometers and 0.8 micrometers, and make the pitch p of any two adjacent embossed patterns 303 "be between 0.6 micrometers and 1.6 micrometers.

In the present embodiment, the second etching mechanism 62 is etched by a Reactive Ion Etching (RIE) method using a High Density Plasma (HDP) source, but the present invention is not limited thereto. For example, the second etching mechanism 62 can also employ Magnetic Enhanced Reactive Ion Etching (MERIE) or pulsed electric field Enhanced techniques to enhance the efficiency and control the direction of etching.

It should be noted that, after the plurality of embossed patterns 303 "are formed on the outer surface 201, the embossed layer 300" on the outer surface 201 of the metal roller 200 is removed, so that the metal roller 200 forms a transfer roller.

[ advantageous effects of the embodiments ]

One of the beneficial effects of the utility model lies in, the utility model provides a lithography system 100, it can pass through "first dustless cavity 1 and the dustless cavity 3 of second is used for avoiding metal gyro wheel 200 is adhered by the pollution sources in the environment" and "photoresistance coating device 2 set up in first dustless cavity 1, and solidification equipment 4 developing device 5 and etching equipment 6 set up in the technical scheme of" in the dustless cavity 3 of second, in order to avoid metal gyro wheel 200 is polluted by the pollution sources in the environment, and makes metal gyro wheel 200's manufacturing yield promotes by a wide margin.

Furthermore, the photolithography system 100 provided by the present invention can use the technical solution that "the speed control mechanism 53 can be used to make the second roller fixing device 31 rotate the metal roller 200 at the wetting speed S1 when the photoresist layer 300 is wetted by the developer R in the wetting device 51", so that the exposed portion of the photoresist layer 300 can fully react with the developer R, and then be completely dissolved by the developer R.

Furthermore, the photolithography system 100 of the present invention can control the second roller fixing device 31 through the speed control mechanism 53, so that the metal roller 200 rotates at the spin-drying speed S2, and the water remained on the patterned photoresist layer 300 ' is separated, so that the developer R and the water are not remained on the patterned photoresist layer 300 ', thereby preventing the patterned photoresist layer 300 ' from being oxidized or chemically reacted in other subsequent processes, and increasing the manufacturing yield of the metal roller 200.

Furthermore, the photolithography system 100 provided by the present invention can be installed on the supporting frame 711 by "the dust-proof sleeve 72 is installed on the supporting frame 711, and the dust-proof sleeve 72 defines a dust-proof space 721 with a predetermined level of cleanness, the dust-proof space 721 can be used for accommodating the metal roller 200, so that the cart body 71 can be used for transporting the metal roller 200 in an environment with a predetermined level of cleanness", so that the metal roller 200 is not affected by dust, particles or other contaminants when moving between the working tables.

Furthermore, the lithography system 100 of the present invention can reduce the chance of defects in the imprint layer 300 "by the technical solution that the etching apparatus 6 is used to etch the patterned photoresist layer 300' in an anisotropic etching manner to form the imprint layer 300".

The above disclosure is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of the present invention, so all the equivalent technical changes made by the present invention through the descriptions and drawings are included in the scope of the present invention.

Claims (10)

1. A lithography system for forming an imprinting layer on an outer surface of a metal roller, comprising:

a first clean chamber for preventing the metal roller from being adhered by pollution sources in the environment, and the first clean chamber comprises a first roller fixing device for clamping and rotating the metal roller;

a photoresist coating device arranged in the first dust-free cavity and used for coating a photoresist layer on the outer surface of the metal roller;

a second dust-free chamber for preventing the metal roller from being adhered by pollution sources in the environment, wherein the second dust-free chamber comprises a second roller fixing device for clamping and rotating the metal roller;

the curing device is arranged in the second dust-free cavity and is used for irradiating a patterned light source on the photoresist layer so as to form a plurality of exposure patterns on one side of the photoresist layer;

the developing device is arranged in the second dust-free cavity and is used for removing the materials of the exposure patterns on the photoresist layer and forming a patterned photoresist layer; and

and the etching equipment is arranged in the second dust-free cavity and is used for etching the patterned photoresist layer in an anisotropic etching mode to form the imprinting layer.

2. The lithography system of claim 1, wherein said etching apparatus further comprises a first etching mechanism capable of masking said imprinting layer and etching said outer surface of said metal roller by anisotropic etching to form a plurality of imprinted patterns on said outer surface.

3. The lithography system of claim 1, further comprising a cart for moving said metal roller from said first clean chamber into said second clean chamber.

4. The lithography system of claim 2, wherein said etching apparatus further comprises a second etching mechanism operable to form a plurality of said imprint patterns on said outer surface such that a depth of any of said imprint patterns is between 0.2 microns and 0.6 microns and a width of any of said imprint patterns is between 0.3 microns and 0.8 microns.

5. The lithography system of claim 1, wherein said developing apparatus comprises:

a wetting device for accommodating a developer; and

and the moving device is used for enabling the second roller fixing device and the soaking device to move relatively so that the soaking device can be used for locally soaking the photoresist layer with the developer contained by the soaking device.

6. The lithography system of claim 5, wherein said developing apparatus further comprises a speed control mechanism, said speed control mechanism being electrically connected to said second roller fixture, and said developing apparatus being configured to cause said second roller fixture to selectively rotate said metal roller at a soaking speed and a spin-drying speed; the speed control mechanism can be used for enabling the second roller fixing device to rotate the metal roller at the infiltration speed to enable the photoresist layer to be evenly infiltrated by the developer when the photoresist layer is infiltrated by the developer in the infiltration device, so that part of the photoresist layer is dissolved in the developer to further form the patterned photoresist layer.

7. The lithography system of claim 5, wherein said developing apparatus further comprises a rinsing device for rinsing said developer distributed on said patterned photoresist layer with water as said patterned photoresist layer exits said developer in said immersion device.

8. The lithography system of claim 7, wherein said immersion apparatus further comprises a cover, and said cover is configured to block a backflow of used water and used developer into said immersion apparatus when said rinsing device is rinsing said developer distributed on said patterned photoresist layer.

9. The lithography system of claim 6, wherein said speed control mechanism is operable to control said second roller fixture to rotate said metal roller at said immersion speed of between 1 rpm and 120 rpm.

10. The lithography system of claim 6, wherein said speed control mechanism is operable to control said second roller fixture to rotate said metal roller at said spin speed of between 2900 rpm and 4500 rpm.

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