CN213266691U - Device for realizing ultrahigh vacuum evaporation by using differential air pumping system - Google Patents
Device for realizing ultrahigh vacuum evaporation by using differential air pumping system Download PDFInfo
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- CN213266691U CN213266691U CN202020205611.0U CN202020205611U CN213266691U CN 213266691 U CN213266691 U CN 213266691U CN 202020205611 U CN202020205611 U CN 202020205611U CN 213266691 U CN213266691 U CN 213266691U
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Abstract
The utility model provides an utilize difference air exhaust system to realize device of super high vacuum evaporation plating, include: a furnace source region and a sample region; the furnace source area comprises a furnace source area cavity, an evaporation source and a furnace source area vacuum pump; the evaporation source is arranged in the furnace source area cavity and fixed on the inner wall of the furnace source area cavity; the furnace source region vacuum pump is connected with the furnace source region cavity; the sample area comprises a sample area cavity, a substrate table, a sample area vacuum pump and a differential current limiting channel; the substrate table is inserted into the sample area cavity from the upper side or the side of the sample area cavity; the sample area vacuum pump is arranged in the sample area cavity and fixed on the inner wall of the sample area cavity; the differential flow limiting channel is arranged at the connection part of the furnace source area and the sample area; the furnace source area cavity and the sample area cavity are connected through a differential flow limiting channel. The utility model has the advantages that: the vacuum degree near the evaporation source can be reduced along with the increase of the gas, so that the quality of the coating film is reduced.
Description
Technical Field
The utility model relates to an evaporation device field, in particular to utilize difference air exhaust system to realize device of super high vacuum evaporation plating.
Background
Vacuum evaporation is a technique of evaporating a material by heating under a vacuum condition to deposit material particles on a substrate to form a film. The molecular beam epitaxy method is characterized in that under the condition of ultrahigh vacuum, molecular beams of material elements are directly sprayed to the surface of a substrate, so that an epitaxial layer is formed on the substrate, an extremely thin single crystal film can be grown, and the thickness of the film can be accurately controlled. The vacuum degree is an important index of an ultrahigh vacuum coating system, and the vacuum can not only provide an ultra-clean environment for the growth of a film, but also improve the free path of molecular motion and realize high-quality coating. Therefore, the degree of vacuum is one of the important indicators of the coating system.
In a conventional vapor deposition system, when a film material is heated to vaporize it to generate an atomic beam or a molecular beam, an evaporation source is often heated to a high temperature, and particularly, for most metal materials, the heating is required to be 1000 to 2000 ℃. In the heating process, the vacuum degree near the evaporation source can be reduced along with the increase of the gas, because the scattering among gas molecules is enhanced, and the collision between material molecules or atoms and residual gas molecules is enhanced, thereby further influencing the coating quality.
Therefore, there is a need for a device capable of reducing the deterioration of the coating quality caused by the decrease of the vacuum degree near the evaporation source with the increase of the gas under the vacuum condition.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model discloses an utilize difference air exhaust system to realize device of super high vacuum evaporation plating, the technical scheme of the utility model is implemented like this:
the utility model provides an utilize difference pumping system to realize device of ultrahigh vacuum coating by vaporization which characterized in that includes: a furnace source region 1 and a sample region 2; the furnace source region 1 comprises a furnace source region cavity 3, an evaporation source 5 and a furnace source region vacuum pump 6; the evaporation source 5 is arranged in the furnace source area cavity 3 and fixed on the inner wall of the furnace source area cavity 3; the furnace source region vacuum pump 6 is connected with the furnace source region cavity 3; the sample area 2 comprises a sample area cavity 4, a substrate table 7 and a sample area vacuum pump 8; the substrate table 7 is inserted into the sample area cavity 4 from above or from the side of the sample area cavity 4; the sample sucking area vacuum pump 8 is arranged inside the sample area cavity 4 and fixed on the inner wall of the sample area cavity 4; the differential flow limiting channel 9 is arranged at the connection part of the furnace source region 1 and the sample region 2; the furnace source region cavity 3 is connected with the sample region cavity 4 through the differential flow limiting channel 9.
Preferably, the furnace source region cavity 3 may be selected from one including a cylindrical shape, a rectangular column, and a polygonal column.
Preferably, the furnace source area cavity 3 comprises an evaporation source 5 projection and a furnace source area vacuum pump 6 projection; the evaporation source 5 is arranged in the projection of the evaporation source 5; and the furnace source region vacuum pump 6 is connected with the inside of the furnace source region cavity 3 through the projection of the furnace source region vacuum pump 6.
Preferably, the sample region chamber 4 is one selected from the group consisting of a cylinder, a rectangular column, and a polygonal column.
Preferably, the sample region cavity 4 comprises a sample region vacuum pump projection; the sample area vacuum pump bulge is arranged on one surface of the sample area cavity 4; the sample region vacuum pump 8 is arranged inside the sample region vacuum pump projection and fixed on the sample region vacuum pump projection.
Preferably, the furnace source region vacuum pump 6 is selected from one of a traction molecular pump, a turbo molecular pump and a composite molecular pump. The sample region vacuum pump 8 may be selected from the group consisting of a non-evaporable getter pump, an ion pump, a composite pump and a molecular pump.
Preferably, the evaporation source 5 is selected from one based on evaporation sources 5 including resistance heating, electron beam heating, high frequency induction heating, arc heating, and laser heating.
Preferably, the number of the evaporation sources 5 is one or more; the differential current limiting channels 9 are one or more.
Preferably, the differential flow restricting passage is selected from one or more of a group consisting of a round hole, a square hole and a V-shaped conduit.
By implementing the technical scheme of the utility model, the technical problem that the vacuum degree near the evaporation source is reduced along with the increase of gas in the heating process in the prior art, and the coating quality is further influenced can be solved; implement the technical scheme of the utility model, can realize reducing the scattering between the gas molecule and strengthen, improve the technical effect of coating film quality.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only one embodiment of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an apparatus for implementing ultra-high vacuum evaporation by using a differential pumping system.
In the above drawings, the reference numerals denote:
the device comprises a furnace source region 1, a sample region 2, a furnace source region cavity 3, a sample region cavity 4, an evaporation source 5, a furnace source region vacuum pump 6, a substrate table 7, a sample region vacuum pump 8 and a differential current limiting channel 9.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In a specific embodiment, as shown in fig. 1, an apparatus for performing ultra-high vacuum evaporation by using a differential pumping system, comprises: a furnace source region 1 and a sample region 2; the furnace source region 1 comprises a furnace source region cavity 3, an evaporation source 5 and a furnace source region vacuum pump 6; the furnace source area cavity 3 is selected from one of a cylinder, a rectangular column and a polygonal column, and the furnace source area cavity 3 comprises an evaporation source 5 bulge and a furnace source area vacuum pump 6 bulge; the evaporation source 5 is arranged in the projection of the evaporation source 5; the furnace source region vacuum pump 6 is connected with the inside of the furnace source region cavity 3 through a bulge of the furnace source region vacuum pump 6; the sample area 2 comprises a sample area cavity 4, a substrate table 7 and a sample area vacuum pump 8; the sample area cavity 4 is a polyhedron, and the sample area cavity 4 comprises a sample area vacuum pump bulge; the sample area vacuum pump bulge is arranged on one surface of the sample area cavity 4; the sample area vacuum pump 8 is arranged inside the sample area vacuum pump bulge and fixed on the sample area vacuum pump bulge; the furnace source region 1 is connected with the sample region 2; the differential current limiting channel 9 is arranged at the connection part of the furnace source area 1 and the sample area 2; the furnace source region 1 is connected with the sample region 2 through the differential current limiting channel 9; the evaporation source 5 is selected from one based on the evaporation source 5 including resistance heating, electron beam heating, high-frequency induction heating, arc heating, and laser heating.
In the specific embodiment, a separate cavity is adopted between the furnace source area 1 and the sample area 2, the evaporation source 5 is arranged in the furnace source area 1, a heating film material placing position is arranged on the evaporation source 5, an evaporation film material is placed on the heating film material placing position, and the evaporation source 5 heats the evaporation film material so as to generate material gas molecules/atoms required by evaporation; the sample region 2 is a place where vapor deposition work is performed; the material molecules/atoms move towards the direction of the differential current limiting channel 9 and then flow into the sample area cavity 4 to form molecular beams to impact on the substrate of the substrate table 7, so that the coating operation in the sample area cavity 4 is realized, and meanwhile, the vacuum degree in the sample area cavity 4 is maintained by the sample area 2 under the action of the sample area vacuum pump 8, so that the operation quality of the coating operation is maintained, and finally, a final coating operation product is generated. The specific structure of the differential current limiting channel 9 is designed according to the characteristics of the evaporation source beam. Compared with the traditional evaporation device with a single cavity, the evaporation device with the multiple cavities is provided, only the differential current limiting channel 9 is reserved between the cavities to communicate the motion between the two cavities, and the cavities are connected through the small holes; due to the existence of the small holes, the molecular beam generated in the furnace source region 1 can only enter the sample region 2 through the small holes for evaporation operation, thereby limiting the heat released when the evaporation source 5 is heated and the material outgassing to enter the sample region 2, but simultaneously ensuring that the material molecules/atoms for evaporation can move to the sample support of the substrate table 7; in brief, the small holes are used for controlling the gas flux entering the sample area cavity 4, so that the vacuum degree of the sample area 2 is ensured not to be reduced along with the environmental change of the furnace source area 1, the impact among gas molecules is reduced, and the coating quality is improved.
The background vacuum of the furnace source cavity is P1The pumping speed of the vacuum pump 6 in the furnace source area is S1Background vacuum of sample chamber is P2The pumping speed of the vacuum pump 8 in the sample area is S2In the evaporation process, the air release amount of the evaporation source 5 is Q, the conductance of the small hole is C, and the differential design can control the air pressure increment of the sample cavity
Whereas the increase in air pressure at the sample in the case of a single chamber (non-differential design)
In addition, the vacuum degree ratio of the sample cavity and the furnace source cavity at the time
For those skilled in the art, it is possible to use S1、S2C is set so that Δ P is set<Δ P' and decrease P2/P1To obtain smaller air pressure increment of the sample cavity, thereby improving the film coating effect. And controlling the vacuum degree of a furnace source cavity to be 10-8The sample chamber is maintained at 10 mbar-10mbar magnitude, thereby greatly improving the quality of the coating film.
In a preferred embodiment 2, as shown in fig. 1, the furnace source region vacuum pump 6 and the sample region vacuum pump 8 can be respectively selected and assembled according to the required vacuum degree, and in the practical application process, the vacuum degree of the furnace source region 1 can be slightly lower than that of the sample region 2.
In a preferred embodiment 3, the number of evaporation sources 5 is one or more; the differential current limiting channels 9 are one or more.
In such a preferred embodiment, if the number of the evaporation sources 5 is set to be plural, a corresponding plurality of differential current limiting channels 9 should be set, and each evaporation source 5 should have a corresponding differential current limiting channel 9 corresponding thereto.
In a preferred embodiment 4, the differential limiting channels 9 can be selected according to the specific shape and type of the corresponding differential limiting channel according to different materials.
It should be understood that the above description is only exemplary of the present invention, and is not intended to limit the present invention, and that any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included within the scope of the present invention.
Claims (9)
1. The utility model provides an utilize difference pumping system to realize device of ultrahigh vacuum coating by vaporization which characterized in that includes: a furnace source area (1) and a sample area (2);
the furnace source area (1) comprises a furnace source area cavity (3), an evaporation source (5) and a furnace source area vacuum pump (6); the evaporation source (5) is arranged in the furnace source area cavity (3) and fixed on the inner wall of the furnace source area cavity (3); the furnace source region vacuum pump (6) is connected with the furnace source region cavity (3);
the sample area (2) comprises a sample area cavity (4), a substrate table (7) and a sample area vacuum pump (8); the substrate table (7) is inserted into the sample area cavity (4) from above or from the side of the sample area cavity (4); the sample area vacuum pump (8) is arranged inside the sample area cavity (4) and fixed on the inner wall of the sample area cavity (4);
a differential flow limiting channel (9) is arranged at the joint of the furnace source region (1) and the sample region (2); the furnace source area cavity (3) is connected with the sample area cavity (4) through the differential flow limiting channel (9).
2. The apparatus of claim 1, wherein the differential pumping system is used to perform ultra-high vacuum evaporation, and the apparatus further comprises: the furnace source region cavity (3) can be one of a cylindrical column and a polygonal column.
3. The apparatus of claim 2, wherein the differential pumping system is used to perform ultra-high vacuum evaporation, and the apparatus further comprises: the furnace source area cavity (3) comprises an evaporation source bulge and a furnace source area vacuum pump bulge; the evaporation source (5) is arranged in the evaporation source bulge; and the furnace source area vacuum pump (6) is connected with the inside of the furnace source area cavity (3) through the furnace source area vacuum pump bulge.
4. The apparatus of claim 1, wherein the differential pumping system is used to perform ultra-high vacuum evaporation, and the apparatus further comprises: the sample region cavity (4) may use one of a cylindrical column and a polygonal column.
5. The apparatus of claim 4, wherein the differential pumping system is used to perform ultra-high vacuum evaporation, and the apparatus further comprises: the sample area cavity (4) comprises a sample area vacuum pump bulge; the sample area vacuum pump bulge is arranged on one surface of the sample area cavity (4); the sample area vacuum pump (8) is arranged inside the sample area vacuum pump bulge and fixed on the sample area vacuum pump bulge.
6. The apparatus for ultra-high vacuum evaporation according to any one of claims 1 to 5, wherein: the furnace source region vacuum pump (6) is selected from one of a traction molecular pump, a turbine molecular pump and a composite molecular pump; the sample region vacuum pump (8) is selected from one of a non-evaporable getter pump, an ion pump and a complex molecular pump.
7. The apparatus for ultra-high vacuum evaporation according to any one of claims 1 to 5, wherein: the number of the evaporation sources (5) is one or more; the number of the differential current limiting channels (9) is one or more.
8. The apparatus for ultra-high vacuum evaporation according to any one of claims 1 to 5, wherein: the evaporation source (5) is selected from one of evaporation sources based on resistance heating, electron beam heating, high-frequency induction heating, arc heating, and laser heating.
9. The apparatus for ultra-high vacuum evaporation according to any one of claims 1 to 5, wherein: the differential flow-limiting channel is selected from one or more of a round hole, a square hole and a V-shaped conduit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020205611.0U CN213266691U (en) | 2020-02-25 | 2020-02-25 | Device for realizing ultrahigh vacuum evaporation by using differential air pumping system |
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| CN202020205611.0U CN213266691U (en) | 2020-02-25 | 2020-02-25 | Device for realizing ultrahigh vacuum evaporation by using differential air pumping system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111139447A (en) * | 2020-02-25 | 2020-05-12 | 费勉仪器科技（上海）有限公司 | Device for realizing ultrahigh vacuum evaporation by using differential air pumping system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111139447A (en) * | 2020-02-25 | 2020-05-12 | 费勉仪器科技（上海）有限公司 | Device for realizing ultrahigh vacuum evaporation by using differential air pumping system |
| CN111139447B (en) * | 2020-02-25 | 2023-11-03 | 费勉仪器科技（上海）有限公司 | Device for realizing ultrahigh vacuum evaporation by utilizing differential air extraction system |
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