CN213212656U - Wavelength-selectable semiconductor laser system - Google Patents
Wavelength-selectable semiconductor laser system Download PDFInfo
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- CN213212656U CN213212656U CN202022172270.4U CN202022172270U CN213212656U CN 213212656 U CN213212656 U CN 213212656U CN 202022172270 U CN202022172270 U CN 202022172270U CN 213212656 U CN213212656 U CN 213212656U
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- tunable filter
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Abstract
The utility model discloses a selectable semiconductor laser system of wavelength, include: the device comprises a plurality of semiconductor lasers with different wavelengths, a power supply module, an optical reflector, a dichroic mirror, an acousto-optic tunable filter driver and a signal generator; the plurality of semiconductor lasers are respectively powered by the power supply module; the optical reflector and the dichroic mirror control the direction of the laser beam to combine the laser beams; an acousto-optic medium is arranged in the acousto-optic tunable filter, and forms similar gratings with different periods under the drive of ultrasonic waves with different frequencies, and only laser with specific wavelength can pass through the acousto-optic medium; the signal generator sends periodic signals with different frequencies to control the acousto-optic tunable filter driver, the ultrasonic drive frequency of the acousto-optic tunable filter is changed, and laser with a certain specific wavelength passes through laser beams with multiple wavelengths, so that the wavelength can be selected. The utility model discloses compact structure, application range is wide, and output laser wavelength is optional and stability is high.
Description
Technical Field
The utility model relates to a laser application technology field, concretely relates to optional semiconductor laser system of wavelength.
Background
Currently, in laser spectral imaging, a sample is irradiated with laser light of different wavelengths. The existing solutions are to use a broad spectrum laser and a monochromator simultaneously or to switch a plurality of different wavelength lasers. The former has overlarge volume of experimental equipment and increased scientific research cost due to the simultaneous use of two instruments, and the total output power of the broad spectrum laser is the sum of the output powers of all wavelengths due to the working principle of the broad spectrum laser, so that even if the total output power of the broad spectrum laser is far higher than the output power of a single-wavelength laser with the same index, the power of the broad spectrum laser at a single wavelength is far lower than the output power of the single-wavelength laser with the same index after the broad spectrum laser selects a certain wavelength through a monochromator. In practical application, the latter needs to be replaced by another laser with another wavelength, thereby affecting the stability and repeatability of the experimental optical path.
SUMMERY OF THE UTILITY MODEL
In view of this, in order to solve the above problems in the prior art, the present invention provides a wavelength selectable semiconductor laser system with simple structure, compact size, wide application range and high stability.
The utility model discloses an above-mentioned problem is solved to following technical means:
a wavelength selectable semiconductor laser system comprising: the device comprises a plurality of semiconductor lasers with different wavelengths, a power supply module, an optical reflector, a dichroic mirror, an acousto-optic tunable filter driver and a signal generator; the plurality of semiconductor lasers are respectively powered by the power supply module; the optical reflector and the dichroic mirror control the direction of the laser beam to combine the laser beams; an acousto-optic medium is arranged in the acousto-optic tunable filter, and forms similar gratings with different periods under the drive of ultrasonic waves with different frequencies, and only laser with specific wavelength can pass through the acousto-optic medium; the signal generator sends periodic signals with different frequencies to control the acousto-optic tunable filter driver, the ultrasonic drive frequency of the acousto-optic tunable filter is changed, and laser with a certain specific wavelength passes through laser beams with multiple wavelengths, so that the wavelength can be selected.
Preferably, the wavelength-selectable semiconductor laser system includes:
a power module for supplying power to the semiconductor laser;
four semiconductor lasers; the first semiconductor laser is used for emitting laser with a first wavelength, the second semiconductor laser is used for emitting laser with a second wavelength, the third semiconductor laser is used for emitting laser with a third wavelength, and the fourth semiconductor laser is used for emitting laser with a fourth wavelength;
an optical mirror disposed at 45 ° to the first wavelength laser beam for reflecting the first wavelength laser beam;
a first dichroic mirror disposed at 45 degrees to the second wavelength laser beam for reflecting the second wavelength laser beam and transmitting the first wavelength laser beam;
a second dichroic mirror disposed at 45 ° to the third wavelength laser beam for reflecting the third wavelength laser beam and transmitting the second wavelength laser beam;
a third dichroic mirror disposed at 45 ° to the fourth wavelength laser beam for reflecting the fourth wavelength laser beam and transmitting the third wavelength laser beam;
an acousto-optic tunable filter, placed behind the third dichroic mirror, for selecting laser light of a desired wavelength from among laser beams including four wavelengths, and passing and outputting the laser light of the wavelength;
an acousto-optic tunable filter driver for changing the ultrasonic drive frequency of the acousto-optic tunable filter and changing the laser wavelength that can pass through the acousto-optic tunable filter;
a signal generator for generating periodic signals with different frequencies, and inputting the periodic signals to the acousto-optic tunable filter driver; the acousto-optic tunable filter driver adjusts the ultrasonic driving frequency of the acousto-optic tunable filter according to the periodic signal, and changes the laser wavelength which can pass through the acousto-optic tunable filter; thereby outputting laser with a certain specific wavelength and realizing wavelength selection.
Compared with the prior art, the beneficial effects of the utility model include at least:
the utility model discloses compact structure, application range is wide, and output laser wavelength is optional and stability is high.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a wavelength-selective semiconductor laser system according to the present invention.
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanying the drawings are described in detail below. It should be noted that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by those skilled in the art without any inventive work are within the scope of the present invention.
As shown in fig. 1, the present invention provides a wavelength selectable semiconductor laser system, comprising:
a power module for supplying power to the semiconductor laser;
four semiconductor lasers; the laser device comprises a first semiconductor laser device 1, a second semiconductor laser device 2, a third semiconductor laser device 3 and a fourth semiconductor laser device 4, wherein the first semiconductor laser device is used for emitting laser with a first wavelength, the second semiconductor laser device is used for emitting laser with a second wavelength, the third semiconductor laser device is used for emitting laser with a third wavelength, and the fourth semiconductor laser device 4 is used for emitting laser with a fourth wavelength;
an optical mirror M1 disposed at 45 ° to the first wavelength laser beam for reflecting the first wavelength laser beam;
a first dichroic mirror M2 disposed at 45 DEG to the second wavelength laser beam, for reflecting the second wavelength laser beam and transmitting the first wavelength laser beam;
a second dichroic mirror M3 disposed at 45 ° to the laser beam of the third wavelength, for reflecting the laser beam of the third wavelength and transmitting the laser beam of the second wavelength;
a third dichroic mirror M4 disposed at 45 ° to the fourth wavelength laser beam, for reflecting the fourth wavelength laser beam and transmitting the third wavelength laser beam;
an acousto-optic tunable filter a1 placed after the third dichroic mirror M4 for selecting laser light of a desired wavelength from among laser light beams including four wavelengths, passing the laser light of the wavelength, and outputting the laser light;
and the acousto-optic tunable filter driver is used for changing the ultrasonic driving frequency of the acousto-optic tunable filter and changing the laser wavelength which can pass through the acousto-optic tunable filter.
As shown in fig. 1, the first semiconductor laser 1 emits laser light of a first wavelength, is reflected by an optical mirror M1, and is deflected at 90 ° from the original laser beam. The second semiconductor laser 2 emits laser light of a second wavelength, is reflected by the first dichroic mirror M2, is deflected at 90 ° from the original laser beam, and coincides with the first wavelength laser beam transmitted therethrough. The third semiconductor laser 3 emits laser light of a third wavelength, is reflected by the second dichroic mirror M3, is deflected at 90 ° from the original laser beam, and coincides with the first and second wavelength laser beams transmitted therethrough. The fourth semiconductor laser 4 emits fourth wavelength laser light, is reflected by the third dichroic mirror M4, is deflected at 90 ° to the original laser beam, and is superimposed on the first, second, and third wavelength laser beams transmitted therethrough, thereby forming laser light including four wavelengths.
The signal generator sends periodic signals with different frequencies, and the periodic signals are input to the acousto-optic tunable filter driver. The acousto-optic tunable filter driver adjusts the ultrasonic drive frequency of the acousto-optic tunable filter according to the periodic signal, and changes the laser wavelength which can pass through the acousto-optic tunable filter. Thereby outputting laser with a certain specific wavelength and realizing wavelength selection.
The utility model discloses compact structure, application range is wide, and output laser wavelength is optional and stability is high.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (2)
1. A wavelength selectable semiconductor laser system, comprising: the device comprises a plurality of semiconductor lasers with different wavelengths, a power supply module, an optical reflector, a dichroic mirror, an acousto-optic tunable filter driver and a signal generator; the plurality of semiconductor lasers are respectively powered by the power supply module; the optical reflector and the dichroic mirror control the direction of the laser beam to combine the laser beams; an acousto-optic medium is arranged in the acousto-optic tunable filter, and forms similar gratings with different periods under the drive of ultrasonic waves with different frequencies, and only laser with specific wavelength can pass through the acousto-optic medium; the signal generator sends periodic signals with different frequencies to control the acousto-optic tunable filter driver, the ultrasonic drive frequency of the acousto-optic tunable filter is changed, and laser with a certain specific wavelength passes through laser beams with multiple wavelengths, so that the wavelength can be selected.
2. A wavelength selectable semiconductor laser system as claimed in claim 1 wherein the wavelength selectable semiconductor laser system comprises:
a power module for supplying power to the semiconductor laser;
four semiconductor lasers; the first semiconductor laser is used for emitting laser with a first wavelength, the second semiconductor laser is used for emitting laser with a second wavelength, the third semiconductor laser is used for emitting laser with a third wavelength, and the fourth semiconductor laser is used for emitting laser with a fourth wavelength;
an optical mirror disposed at 45 ° to the first wavelength laser beam for reflecting the first wavelength laser beam;
a first dichroic mirror disposed at 45 degrees to the second wavelength laser beam for reflecting the second wavelength laser beam and transmitting the first wavelength laser beam;
a second dichroic mirror disposed at 45 ° to the third wavelength laser beam for reflecting the third wavelength laser beam and transmitting the second wavelength laser beam;
a third dichroic mirror disposed at 45 ° to the fourth wavelength laser beam for reflecting the fourth wavelength laser beam and transmitting the third wavelength laser beam;
an acousto-optic tunable filter, placed behind the third dichroic mirror, for selecting laser light of a desired wavelength from among laser beams including four wavelengths, and passing and outputting the laser light of the wavelength;
an acousto-optic tunable filter driver for changing the ultrasonic drive frequency of the acousto-optic tunable filter and changing the laser wavelength that can pass through the acousto-optic tunable filter;
a signal generator for generating periodic signals with different frequencies, and inputting the periodic signals to the acousto-optic tunable filter driver; the acousto-optic tunable filter driver adjusts the ultrasonic driving frequency of the acousto-optic tunable filter according to the periodic signal, and changes the laser wavelength which can pass through the acousto-optic tunable filter; thereby outputting laser with a certain specific wavelength and realizing wavelength selection.
Priority Applications (1)
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CN202022172270.4U CN213212656U (en) | 2020-09-28 | 2020-09-28 | Wavelength-selectable semiconductor laser system |
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CN202022172270.4U CN213212656U (en) | 2020-09-28 | 2020-09-28 | Wavelength-selectable semiconductor laser system |
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