CN213186046U - F-band frequency tripler - Google Patents
F-band frequency tripler Download PDFInfo
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- CN213186046U CN213186046U CN202022362639.8U CN202022362639U CN213186046U CN 213186046 U CN213186046 U CN 213186046U CN 202022362639 U CN202022362639 U CN 202022362639U CN 213186046 U CN213186046 U CN 213186046U
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Abstract
The utility model discloses an F-band frequency tripler, which comprises a first metal cavity, a second metal cavity connected with one end of the first metal cavity, and a frequency doubling circuit structure arranged in the first metal cavity and the second metal cavity in a crossing way; the frequency doubling circuit structure comprises a 50 omega microstrip line, a local oscillator low-pass filter and a radio frequency output probe which are sequentially connected, and further comprises two Schottky diodes, wherein the two Schottky diodes are connected to the frequency doubling circuit structure in a reverse flip-chip mode. The frequency multiplier frequency circuit is planar, simple in structure, easy to assemble, capable of covering the whole F wave band and wide in working frequency band.
Description
Technical Field
The utility model relates to a millimeter wave communication equipment and use accessory technical field especially relate to a F wave band frequency tripler.
Background
Millimeter wave sources with high reliability and stability are generally required in the fields of radar communication, radio astronomy, atmospheric remote sensing and the like. The acquisition of millimeter wave source generally has two modes of direct oscillation generation and step-by-step frequency multiplication. The millimeter wave source generated by direct oscillation has high output power but low stability. And a millimeter wave source with high stability, compact structure and low phase noise can be easily obtained by a frequency doubling mode.
The current commonly used frequency multiplication mode includes two modes of MMIC chip implementation and diode implementation. MMIC chip-based implementation is mainly applied to frequency bands below 110GHz, and higher frequency bands are implemented more based on diodes. The existing frequency multiplier realized by using the diode has a complex structure and low assembly efficiency.
Disclosure of Invention
In order to overcome the defect among the prior art, the embodiment of the utility model provides a F wave band frequency tripler, this frequency multiplier frequency circuit is complanate, simple structure, and easily assembly covers full section F wave band, and the operating frequency width.
In order to achieve the above purpose, the utility model adopts the technical scheme that: an F-band frequency tripler, comprising: the frequency multiplier circuit comprises a first metal cavity, a second metal cavity connected with one end of the first metal cavity, and a frequency multiplier circuit structure arranged in the first metal cavity and the second metal cavity in a crossing manner;
the frequency doubling circuit structure comprises a 50 omega microstrip line, a local oscillator low-pass filter and a radio frequency output probe which are sequentially connected, and further comprises two Schottky diodes, wherein the two Schottky diodes are connected to the frequency doubling circuit structure in a reverse flip-chip mode.
In the above technical solution, the frequency doubling circuit structure further includes a quartz medium substrate, and the 50 Ω microstrip line, the local oscillator low-pass filter, and the radio frequency output probe are disposed on the quartz medium substrate.
In the above technical solution, the radio frequency output probe is located in the second metal cavity.
In the above technical solution, the quartz medium substrate is provided with an assembly reference positioning point, so that the quartz medium substrate is positioned and mounted on the metal cavity.
In the above technical solution, the first metal cavity is a microstrip transmission cavity.
In the above technical solution, the second metal cavity is a radio frequency 90 ° turn waveguide.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
1. the utility model discloses well frequency doubling circuit structure includes the quartz medium base plate and sets up 50 omega microstrip line, local oscillator low pass filter and the radio frequency output probe that connects gradually on the quartz medium base plate, adopts reverse flip-chip mode to connect two schottky diodes in the frequency doubling circuit structure, realizes flattening with the frequency doubling circuit structure, simplifies its structure, is convenient for install; and the assembled frequency multiplier can cover the whole F wave band, the working frequency band is wide, and the harmonic suppression is high.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of the F-band frequency tripler of the present invention.
Reference numerals of the above figures: 1. a 50 Ω microstrip line; 2. a local oscillator low-pass filter; 3. a Schottky diode; 4. a radio frequency output probe; 5. assembling a reference positioning point; 6. a radio frequency 90 degree turn waveguide; 7. a microstrip transmission cavity.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The first embodiment is as follows: referring to fig. 1, an F-band frequency tripler includes: the frequency multiplier circuit comprises a first metal cavity, a second metal cavity connected with one end of the first metal cavity, and a frequency multiplier circuit structure arranged in the first metal cavity and the second metal cavity in a crossing manner;
the frequency doubling circuit structure comprises a 50 omega microstrip line, a local oscillator low-pass filter and a radio frequency output probe which are sequentially connected, and further comprises two Schottky diodes, wherein the two Schottky diodes are connected to the frequency doubling circuit structure in a reverse flip-chip mode.
The frequency doubling circuit structure further comprises a quartz medium substrate, and the 50 omega microstrip line, the local oscillator low-pass filter and the radio frequency output probe are arranged on the quartz medium substrate.
The frequency doubling circuit structure comprises a quartz medium substrate, and a 50 omega microstrip line, a local oscillator low-pass filter and a radio frequency output probe which are arranged on the quartz medium substrate and connected in sequence, wherein two Schottky diodes are connected into the frequency doubling circuit structure in a reverse flip-chip manner, so that the frequency doubling circuit structure is planarized, the structure is simplified, and the frequency doubling circuit structure is convenient to install; and the assembled frequency multiplier can cover the whole F wave band, the working frequency band is wide, and the harmonic suppression is high.
Referring to fig. 1, the rf output probe is located in the second metal cavity.
And an assembly reference positioning point is arranged on the quartz medium substrate, so that the quartz medium substrate is positioned and installed on the metal cavity.
In a preferred embodiment, the first metal cavity is a microstrip transmission cavity. The second metal cavity is a radio frequency 90-degree turning waveguide.
The present invention has been explained by using specific embodiments, and the explanation of the above embodiments is only used to help understand the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, to sum up, the content of the present specification should not be understood as the limitation of the present invention.
Claims (6)
1. An F-band frequency tripler, comprising: the frequency multiplier circuit comprises a first metal cavity, a second metal cavity connected with one end of the first metal cavity, and a frequency multiplier circuit structure arranged in the first metal cavity and the second metal cavity in a crossing manner;
the frequency doubling circuit structure comprises a 50 omega microstrip line, a local oscillator low-pass filter and a radio frequency output probe which are sequentially connected, and further comprises two Schottky diodes, wherein the two Schottky diodes are connected to the frequency doubling circuit structure in a reverse flip-chip mode.
2. The F-band frequency tripler according to claim 1, wherein: the frequency doubling circuit structure further comprises a quartz medium substrate, and the 50 omega microstrip line, the local oscillator low-pass filter and the radio frequency output probe are arranged on the quartz medium substrate.
3. The F-band frequency tripler according to claim 1, wherein: the radio frequency output probe is positioned in the second metal cavity.
4. The F-band frequency tripler according to claim 2, wherein: and an assembly reference positioning point is arranged on the quartz medium substrate, so that the quartz medium substrate is positioned and installed on the metal cavity.
5. The F-band frequency tripler according to claim 1, wherein: the first metal cavity is a microstrip transmission cavity.
6. The F-band frequency tripler according to claim 1, wherein: the second metal cavity is a radio frequency 90-degree turning waveguide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022362639.8U CN213186046U (en) | 2020-10-21 | 2020-10-21 | F-band frequency tripler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022362639.8U CN213186046U (en) | 2020-10-21 | 2020-10-21 | F-band frequency tripler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213186046U true CN213186046U (en) | 2021-05-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022362639.8U Active CN213186046U (en) | 2020-10-21 | 2020-10-21 | F-band frequency tripler |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213186046U (en) |
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2020
- 2020-10-21 CN CN202022362639.8U patent/CN213186046U/en active Active
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