CN213072136U - Circuit for realizing negative pressure treatment of BMS system through controlling MOS pipe group - Google Patents

Circuit for realizing negative pressure treatment of BMS system through controlling MOS pipe group Download PDF

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CN213072136U
CN213072136U CN202021362642.3U CN202021362642U CN213072136U CN 213072136 U CN213072136 U CN 213072136U CN 202021362642 U CN202021362642 U CN 202021362642U CN 213072136 U CN213072136 U CN 213072136U
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battery
circuit
mos
negative pressure
tubes
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梁志锋
吴伟
吴翔龙
谢礼波
张志平
刘聪
曾国强
黄李冲
陈志军
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Guangdong Greenway Technology Co Ltd
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Guangdong Greenway Technology Co Ltd
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Abstract

The utility model discloses a BMS system realizes circuit that negative pressure was handled through control MOS nest of tubes, include: BMS system chip, MOS nest of tubes, negative pressure treatment circuit; the BMS system chip is connected with the negative pressure processing circuit through the MOS tube group; when the battery system works normally, the BMS system chip detects that the battery circuit is normal, the discharge MOS tube in the MOS tube group is opened, the negative pressure processing circuit is in a cut-off state, and the negative pressure processing circuit does not work; when the battery system is short-circuited, the BMS system chip detects the short circuit of the battery circuit, the MOS pipe group is continuously opened, the MOS pipe group is closed in a delayed mode, the negative pressure processing circuit works, the MOS pipe group is normally closed, and the normal operation of the battery is guaranteed. The utility model discloses can eliminate the influence that the too big produced self-inductance's of electric current variation electromotive force produced when taking place the battery short circuit, guarantee that the MOS pipe can normally close, improve battery product quality, guarantee product safety.

Description

Circuit for realizing negative pressure treatment of BMS system through controlling MOS pipe group
Technical Field
The utility model relates to a battery charge-discharge control technical field especially relates to a BMS system realizes the circuit that the negative pressure was handled through control MOS nest of tubes.
Background
With the development of science and technology, new energy is particularly prominent in our lives, green and environment-friendly are advocated at present, and a large number of electric tools such as new energy automobiles, electric vehicles, various dust collectors, floor sweeping machines and robots cannot be powered on in the market. The lithium cell can take place the short circuit in the use inevitable, and when the lithium cell took place the short circuit externally, the MOS pipe execution turn-off command behind the BMS system detected short circuit current, because the current change is big this moment, produced the self-inductance phenomenon on the circuit to produce higher negative pressure, lead to discharging the MOS pipe delay and close, there is the possibility that the MOS damaged of discharging, still can bring the potential safety hazard problem.
Accordingly, there is a need in the art for improvements.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a technical problem who solves is: the BMS system is provided with a circuit for realizing negative pressure treatment by controlling the MOS tube set so as to solve the problems in the prior art.
According to the utility model discloses an aspect of embodiment discloses a BMS system realizes negative pressure treatment's circuit through control MOS nest of tubes, include:
BMS system chip, MOS nest of tubes, negative pressure treatment circuit;
the BMS system chip is connected with the negative pressure processing circuit through the MOS tube group;
when the battery system works normally, the BMS system chip detects that the battery circuit is normal, the discharge MOS tube in the MOS tube group is opened, the negative pressure processing circuit is in a cut-off state, and the negative pressure processing circuit does not work;
when the short circuit takes place for battery system, BMS system chip detects the battery circuit short circuit, MOS nest of tubes carries out the turn-off action, because battery short circuit produces the electric current grow to electromotive force grow makes MOS nest of tubes lasts to open, and MOS nest of tubes time delay is closed, negative pressure treatment circuit work makes MOS nest of tubes normally closes, guarantees the battery normal operating.
Based on the utility model discloses in another embodiment of the circuit that above-mentioned BMS system realized negative pressure through control MOS nest of tubes and handled, negative pressure treatment circuit includes:
the transistor Q1, the diode D2, the resistor R9 and the resistor R15;
the base electrode of the triode Q1 is connected with the diode D2 and the resistor R9;
the collector of the triode Q1 is connected with the BMS system chip;
the emitting electrode of the triode Q1 is connected with a battery P +;
the other end of the diode D2 is grounded through the resistor R15;
a PACKDIV pin of the BMS system chip is connected with a battery cathode;
when the battery system works normally, the BMS system chip detects that the battery circuit is normal, the discharge MOS tube in the MOS tube group is opened, the triode Q1 is in a cut-off state, and the negative pressure processing circuit does not work;
when the battery system takes place the short circuit, BMS system chip detects the battery circuit short circuit, MOS nest of tubes carries out the turn-off action, produces the electric current grow because the battery short circuit to the electromotive force grow, makes MOS nest of tubes lasts to open, and MOS nest of tubes time delay is closed, works as battery P + is in the negative potential relative to ground, diode D2 forward conduction, resistance R15 and resistance R9 partial pressure form triode Q1's base bias value, and the voltage satisfies the turn-on voltage of triode Q1's base for triode Q1 saturation switches on, makes the grid of MOS nest of tubes and source voltage be in same electric potential, drives MOS nest of tubes quick the closing, guarantees the normal operating of battery.
Based on the utility model discloses in another embodiment of the circuit that negative pressure was handled is realized through control MOS nest of tubes to above-mentioned BMS system, triode Q1's opening voltage is greater than 0.4 volt.
Compared with the prior art, the utility model has the advantages of as follows:
the utility model discloses a BMS system can eliminate the influence that the too big produced self-inductance's of current change electromotive force produced when taking place the battery short circuit when the circuit that negative pressure was handled is organized to control MOS pipe, guarantees that the MOS pipe can normally close, avoids the MOS pipe to close when negative voltage influences the downwardly extending, damages the MOS pipe, improves battery product quality, guarantee product safety.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a circuit diagram of an embodiment of a circuit for implementing negative pressure treatment by controlling a MOS tube set in a BMS system of the present invention;
fig. 2 is a circuit diagram of another embodiment of the circuit for implementing negative pressure treatment by controlling the MOS tube set in the BMS system according to the present invention.
In the figure, 1BMS system chip, 2MOS tube group, 3 negative pressure processing circuit.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The circuit of the BMS system for performing negative pressure processing by controlling the MOS tube set according to the present invention will be described in more detail with reference to the accompanying drawings and embodiments.
Fig. 1 is a circuit diagram of an embodiment of a circuit for implementing negative pressure treatment by controlling a MOS tube group in a BMS system of the present invention, and as shown in fig. 1, the circuit for implementing negative pressure treatment by controlling a MOS tube group in a BMS system of the embodiment includes:
the system comprises a BMS system chip 1, an MOS tube group 2 and a negative pressure processing circuit 3;
the BMS system chip 1 is connected with the negative pressure processing circuit 3 through the MOS tube group 2;
when the battery system works normally, the BMS system chip 1 detects that the battery circuit is normal, the discharge MOS tube in the MOS tube group 2 is opened, the negative pressure processing circuit 3 is in a cut-off state, and the negative pressure processing circuit 3 does not work;
when the short circuit takes place for battery system, BMS system chip 1 detects the battery circuit short circuit, MOS nest of tubes 2 carries out the shutoff action, because the battery short circuit produces the electric current grow to electromotive force grow makes MOS nest of tubes 2 lasts to open, and MOS nest of tubes 2 time delay is closed, negative pressure processing circuit 3 work makes MOS nest of tubes 2 normally close, guarantees the battery normal operating.
Fig. 2 is a circuit diagram of another embodiment of the circuit of the BMS system for implementing negative pressure processing by controlling the MOS tube set, as shown in fig. 2, the negative pressure processing circuit 3 includes:
the transistor Q1, the diode D2, the resistor R9 and the resistor R15;
the base electrode of the triode Q1 is connected with the diode D2 and the resistor R9;
the collector of the triode Q1 is connected with the BMS system chip 1;
the emitting electrode of the triode Q1 is connected with a battery P +;
the other end of the diode D2 is grounded through the resistor R15;
a PACKDIV pin of the BMS system chip 1 is connected with a battery cathode;
when the battery system works normally, the BMS system chip 1 detects that the battery circuit is normal, the discharge MOS tube in the MOS tube group 2 is opened, the triode Q1 is in a cut-off state, and the negative pressure processing circuit 3 does not work;
when the battery system takes place the short circuit, BMS system chip 1 detects the battery circuit short circuit, MOS nest of tubes 2 carries out the turn-off action, produces the electric current grow because the battery short circuit to the electromotive force grow, makes MOS nest of tubes 2 lasts to be opened, and MOS nest of tubes 2 time delay is closed, works as battery P + is in the negative potential for ground, diode D2 forward conduction, resistance R15 and resistance R9 partial pressure form triode Q1's base bias value, and the voltage satisfies the turn-on voltage of triode Q1's base for triode Q1 saturation switches on, makes MOS nest of tubes 2's grid and source voltage be in same electric potential, drives MOS nest of tubes 2 fast closes, guarantees the normal operating of battery.
When short circuit occurs, the electromotive force generated by self-induction due to current change is expressed by formula
Figure DEST_PATH_GDA0002970593960000051
Wherein U is a voltage, L is a self-inductance,
Figure DEST_PATH_GDA0002970593960000052
is the rate of change of current with respect to time, it can be seen that the larger the change of current, the shorter the time, the larger the negative voltage generated, the minimum voltage is-the diode is turned on, the resistor R9And resistor R15, the turn-on voltage of transistor Q1 is greater than 0.4V.
The circuit for controlling the MOS tube group to realize negative pressure treatment in the BMS system provided by the present invention is described in detail above, and the principle and the implementation of the present invention are explained herein by applying specific embodiments, and the description of the above embodiments is only used to help understand the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, to sum up, the content of the present specification should not be understood as the limitation of the present invention.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications and variations can be made in the embodiments or in part of the technical features of the embodiments without departing from the spirit and the scope of the invention.

Claims (3)

1. A BMS system realizes circuit of negative pressure processing through controlling MOS nest of tubes, its characterized in that includes:
BMS system chip, MOS nest of tubes, negative pressure treatment circuit;
the BMS system chip is connected with the negative pressure processing circuit through the MOS tube group;
when the battery system works normally, the BMS system chip detects that the battery circuit is normal, the discharge MOS tube in the MOS tube group is opened, the negative pressure processing circuit is in a cut-off state, and the negative pressure processing circuit does not work;
when the short circuit takes place for battery system, BMS system chip detects the battery circuit short circuit, MOS nest of tubes carries out the turn-off action, because battery short circuit produces the electric current grow to electromotive force grow makes MOS nest of tubes lasts to open, and MOS nest of tubes time delay is closed, negative pressure treatment circuit work makes MOS nest of tubes normally closes, guarantees the battery normal operating.
2. The BMS system of claim 1, wherein the negative voltage processing circuit comprises:
the transistor Q1, the diode D2, the resistor R9 and the resistor R15;
the base electrode of the triode Q1 is connected with the diode D2 and the resistor R9;
the collector of the triode Q1 is connected with the BMS system chip;
the emitting electrode of the triode Q1 is connected with a battery P +;
the other end of the diode D2 is grounded through the resistor R15;
a PACKDIV pin of the BMS system chip is connected with a battery cathode;
when the battery system works normally, the BMS system chip detects that the battery circuit is normal, the discharge MOS tube in the MOS tube group is opened, the triode Q1 is in a cut-off state, and the negative pressure processing circuit does not work;
when the battery system takes place the short circuit, BMS system chip detects the battery circuit short circuit, MOS nest of tubes carries out the turn-off action, produces the electric current grow because the battery short circuit to the electromotive force grow, makes MOS nest of tubes lasts to open, and MOS nest of tubes time delay is closed, works as battery P + is in the negative potential relative to ground, diode D2 forward conduction, resistance R15 and resistance R9 partial pressure form triode Q1's base bias value, and the voltage satisfies the turn-on voltage of triode Q1's base for triode Q1 saturation switches on, makes the grid of MOS nest of tubes and source voltage be in same electric potential, drives MOS nest of tubes quick the closing, guarantees the normal operating of battery.
3. The BMS system according to claim 2, wherein the turn-on voltage of the transistor Q1 is greater than 0.4V.
CN202021362642.3U 2020-07-13 2020-07-13 Circuit for realizing negative pressure treatment of BMS system through controlling MOS pipe group Active CN213072136U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202021362642.3U CN213072136U (en) 2020-07-13 2020-07-13 Circuit for realizing negative pressure treatment of BMS system through controlling MOS pipe group

Publications (1)

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