CN212991090U - Direct copper bonding DCB substrate - Google Patents

Abstract

The utility model relates to a direct copper bonding DCB substrate, direct copper bonding DCB substrate have first side and include first copper layer, and first copper layer includes first base island, second base island and third base island; the second base island partially surrounds the first base island, the third base island partially surrounds the second base island, the first base island, the second base island and the third base island respectively comprise a chip carrying table and a first leading-out end, the chip carrying table and the first leading-out end form a continuous conductive structure through copper-clad wiring, the first leading-out ends of the first base island, the second base island and the third base island are sequentially arranged at the first end of the first side edge, and the chip carrying tables of the first base island, the second base island and the third base island are located at the second end, opposite to the first end, of the first side edge.

Description

Direct copper bonding DCB substrate

Technical Field

The utility model relates to an integrated semiconductor technology field especially relates to a direct copper bonding DCB substrate.

Background

The conventional single-row Direct-insertion sip (system in package) package structure of the power module does not have a Direct Copper Bonding (DCB) substrate, and needs to be cooled by a plastic package body. Therefore, the heat dissipation capability of the package structure is poor, and the power level of the product is limited.

While some single in-line SIP package structures also have a direct copper bonded DCB substrate, such structures require an additional Printed Circuit Board (PCB) to implement. By way of example, such a package structure generally includes a frame, a PCB, and a direct copper bond DCB substrate. The frame lead is welded with the PCB, the drive control chip is arranged on the PCB, the power chip is arranged on the direct copper bonding DCB substrate, and the power chip is interconnected with the PCB through a bonding wire. However, this package structure has a PCB inside, so the packaging process is complicated, the cost is high, and delamination is easily generated.

On the other hand, when the number of leads of the lead frame is large and the size of the leads is small, coplanarity of the leads is poor, and a problem of partial lead cold joint exists when all the leads are simultaneously welded with the direct copper bonding DCB substrate. In addition, the direct copper bonding DCB substrate is small in size and does not have enough space for all leads of the lead frame to be soldered to the direct copper bonding DCB substrate.

In view of this, the prior art is subject to further improvement.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem that a direct copper bonding DCB substrate is provided, the power module that adopts the packaging structure of this direct copper bonding DCB substrate has higher power level, and the volume is less and have good heat-sinking capability.

The technical solution adopted to solve the above technical problem of the present invention is to provide a direct copper bonding DCB substrate, wherein the direct copper bonding DCB substrate has a first side edge and includes a first copper layer, and the first copper layer includes a first base island, a second base island and a third base island; the second base island partially surrounds the first base island, the third base island partially surrounds the second base island, the first base island, the second base island and the third base island respectively comprise a chip carrying table and a first leading-out end, the chip carrying table and the first leading-out end form a continuous conductive structure through copper-clad routing, the first leading-out ends of the first base island, the second base island and the third base island are sequentially arranged at the first end of the first side edge, and the chip carrying tables of the first base island, the second base island and the third base island are located at the second end, opposite to the first end, of the first side edge.

In an embodiment of the present invention, the direct copper bonding DCB substrate is suitable for being close to at least part of the plurality of pin electrical connections of the first side edge through routing, and the direct copper bonding DCB substrate is suitable for being connected with at least part of the plurality of pin electrical connections through welding.

In an embodiment of the present invention, the direct copper-bonded DCB substrate further has a second side adjacent to the first side, and a third side and a fourth side opposite to the first side and the second side, respectively.

In an embodiment of the present invention, the stage of the first base island is close to the fourth side, the stage of the second base island is close to the third side and the fourth side, and the stage of the third base island is close to the third side.

In an embodiment of the present invention, the first copper layer further includes a fourth base island, the fourth base island is close to the second side and the third side and partially surrounds the third base island, and the fourth base island includes a stage and a first leading-out terminal.

In an embodiment of the invention, the first copper layer further includes a fifth base island, the fifth base island is close to the first side, and the first base island partially surrounds the fifth base island.

In an embodiment of the present invention, the first leading-out terminals of the first base island, the second base island, the third base island and the fourth base island are suitable for being respectively welded with corresponding pins.

In an embodiment of the present invention, the first base island, the second base island, and the third base island are respectively suitable for disposing a low-side power device, and the fourth base island is suitable for disposing three high-side power devices.

In an embodiment of the present invention, a driving controller is adapted to be disposed on the fifth base island.

In an embodiment of the invention, the first copper layer further includes three second type terminals near the fourth side.

In an embodiment of the present invention, the second type terminals are adapted to be respectively welded to corresponding pins.

In an embodiment of the present invention, the direct copper bonding DCB substrate further includes a ceramic layer and a second copper layer, the ceramic layer has a first surface and a second surface opposite to the first surface, the first copper layer is disposed on the first surface, and the second copper layer is disposed on the second surface.

The utility model discloses owing to adopt above technical scheme, make it compare with prior art, have following apparent advantage:

the utility model discloses a be equipped with a plurality of bases on the first copper layer of direct copper bonding DCB substrate, wherein be suitable for respectively on first base island, second base island and the third base island and set up a low side power device, be suitable for on the fourth base island to set up three high side power ware, and be suitable for on the fifth base island and set up drive controller. The power module adopting the direct copper bonding DCB substrate has the advantages of higher power level, smaller volume and good heat dissipation capability.

The first leading-out end and the second leading-out end which are positioned on two sides of the direct copper bonding DCB substrate are respectively welded with the corresponding pins, so that a packaging structure formed after the direct copper bonding DCB substrate is connected with the pins still has good structural stability and flatness.

And simultaneously, the utility model discloses a direct copper bonding DCB substrate can be connected through routing mode and a plurality of pin electricity of at least part, has effectively avoided the rosin joint risk that direct copper bonding DCB substrate probably brought when being connected with welding mode and a plurality of pin simultaneously, has guaranteed the good contact between direct copper bonding DCB substrate and a plurality of pin.

Furthermore, adopt the utility model discloses a packaging structure of direct copper bonding DCB substrate need not PCB, realizes simply, and has reduced the cost of manufacture.

Drawings

In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings, wherein:

fig. 1 is a top view of a direct copper bonding DCB substrate according to an embodiment of the present invention.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited by the specific embodiments disclosed below.

As used in this application and the appended claims, the terms "a," "an," "the," and/or "the" are not intended to be inclusive in the singular, but rather are intended to be inclusive in the plural unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that steps and elements are included which are explicitly identified, that the steps and elements do not form an exclusive list, and that a method or apparatus may include other steps or elements.

In describing the embodiments of the present invention in detail, the cross-sectional view showing the structure of the device is not enlarged partially according to the general scale for the convenience of illustration, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.

For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary words "below" and "beneath" can encompass both an orientation of up and down. The device may have other orientations (rotated 90 degrees or at other orientations) and the spatial relationship descriptors used herein should be interpreted accordingly. Further, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.

It will be understood that when an element is referred to as being "on," "connected to," "coupled to" or "contacting" another element, it can be directly on, connected or coupled to, or contacting the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly on," "directly connected to," "directly coupled to" or "directly contacting" another element, there are no intervening elements present. Similarly, when a first component is said to be "in electrical contact with" or "electrically coupled to" a second component, there is an electrical path between the first component and the second component that allows current to flow. The electrical path may include capacitors, coupled inductors, and/or other components that allow current to flow even without direct contact between the conductive components.

The following embodiments of the utility model provide a direct copper bonding DCB substrate, the power module of the packaging structure who adopts this direct copper bonding DCB substrate has higher power level, and the volume is less and have good heat-sinking capability.

Fig. 1 is a top view of a direct copper bonding DCB substrate according to an embodiment of the present invention. The direct copper bonding DCB substrate is described below with reference to fig. 1. It is to be understood that the following description is merely exemplary, and that various changes may be made by those skilled in the art without departing from the spirit of the invention.

Referring to fig. 1, a direct copper bonding DCB substrate 100 has a first side 101 and includes a first copper layer (shaded in the figure) including a first base island 111, a second base island 112, and a third base island 113; wherein the second base island 112 partially surrounds the first base island 111 and the third base island 113 partially surrounds the second base island 112. The first base island 111, the second base island 112 and the third base island 113 respectively comprise a slide holder (i.e. slide holder 111a, slide holder 112a and slide holder 113a) and a first type terminal (i.e. first type terminal 111b, first type terminal 112b and first type terminal 113 b).

In some examples, the stage and the first type of terminals form a continuous conductive structure with copper-clad traces. For example, the stage 111a and the first type leading-out terminal 111b, the stage 112a and the first type leading-out terminal 112b, and the stage 113a and the first type leading-out terminal 113b form a continuous conductive structure through copper-clad wiring, respectively.

The first terminals (i.e., the first terminal 111b, the first terminal 112b, and the first terminal 113b) of the first base island 111, the second base island 112, and the third base island 113 are sequentially disposed at the first end 101a of the first side 101. The stage (i.e., stage 111a, stage 112a, and stage 113a) of the first base island 111, the second base island 112, and the third base island 113 is located at a second end 101b of the first side 101 opposite the first end 101 a.

In one embodiment of the present invention, the DCB substrate 100 is adapted to be electrically connected to a plurality of leads (not shown) at least partially adjacent to the first side 101 by wire bonding. The direct copper bonded DCB substrate 100 is also adapted to be electrically connected to at least a portion of the plurality of leads by soldering.

Wire Bonding, also known as pressure Bonding, binding, Bonding or Wire Bonding, refers to the use of metal wires (e.g., gold wires, aluminum wires, etc.) and the use of heat and pressure or ultrasonic energy to complete the connection of the interconnection lines inside the solid-state circuits in microelectronic devices, such as the connection between power devices (chips) and lead frames.

In an embodiment of the present invention, the direct copper bonding DCB substrate 100 further has a second side 102 adjacent to the first side 101, and a third side 103 and a fourth side 104 opposite to the first side 101 and the second side 102, respectively.

In some embodiments, the stage 111a of the first base island 111 is adjacent to the fourth side 104, the stage 112a of the second base island 112 is adjacent to the third side 103 and the fourth side 104, and the stage 113a of the third base island 113 is adjacent to the third side 103.

In an embodiment of the present invention, the first copper layer further includes a fourth base island 114, the fourth base island 114 is close to the second side 102 and the third side 103 and partially surrounds the third base island 113, and the fourth base island 114 includes a stage 114a and a first type terminal 114 b.

In an embodiment of the present invention, the first copper layer further includes a fifth base island 115, the fifth base island 115 is near the first side 101, and the first base island 111 partially surrounds the fifth base island 115.

It should be noted that "close" may mean that the distance to one side is smaller than the distance to the other side opposite thereto. For example, the fifth base island 115 is close to the first side 101, which means that the distance of the fifth base island 115 relative to the first side 101 is smaller than the distance of the third side 103 opposite to the first side 101, and so on.

In an embodiment of the present invention, the first type terminals (i.e., the first type terminal 111b, the first type terminal 112b, the first type terminal 113b, and the first type terminal 114b) of the first base island 111, the second base island 112, the third base island 113, and the fourth base island 114 are respectively soldered to the corresponding pins.

For example, four first-type terminals of the DCB substrate 100 can be soldered to four corresponding leads (not shown) of the plurality of leads by solder.

In an embodiment of the present invention, the first base island 111, the second base island 112, and the third base island 113 are respectively suitable for disposing one low-side power device, and the fourth base island 114 is suitable for disposing three high-side power devices.

The high-side power device and the low-side power device may be a high-side power chip and a low-side power chip, respectively, such as an Insulated Gate Bipolar Transistor (IGBT) chip. In some examples, the high-side power device and the low-side power device may further include a power transistor and a fast recovery diode, respectively, but the present invention is not limited thereto.

In an embodiment of the present invention, a driving controller is adapted to be disposed on the fifth base island 115.

For example, the driving controller may include a driving control chip, such as a high voltage gate driving chip, but the present invention is not limited thereto.

In an embodiment of the present invention, the first copper layer further includes three second type terminals (i.e. a second type terminal 121, a second type terminal 122, and a second type terminal 123) near the fourth side 104.

In an embodiment of the present invention, the second type terminals (i.e. the second type terminals 121, the second type terminals 122, and the second type terminals 123) are respectively welded to the corresponding pins.

For example, the three second-type terminals of the DCB substrate 100 can be soldered to three leads (not shown) of the plurality of leads by solder.

Preferably, for the direct copper bonding DCB substrate 100 shown in fig. 1, the copper-clad routing portions excluding the four first type terminals (i.e., the first type terminal 111b, the first type terminal 112b, the first type terminal 113b and the first type terminal 114b) and the three second type terminals (i.e., the second type terminal 121, the second type terminal 122 and the second type terminal 123) can be electrically connected to corresponding ones of the plurality of leads by wire bonding.

The first type of terminals and the second type of terminals on the two sides of the DCB substrate 100 are respectively soldered to corresponding leads, so that the package structure formed after the DCB substrate is connected to the leads still has good structural stability and flatness.

And simultaneously, the utility model discloses a direct copper bonding DCB substrate 100 can be connected through routing mode and a plurality of pin electricity of at least part, has effectively avoided the rosin joint risk that direct copper bonding DCB substrate 100 probably brought when being connected with welding mode and a plurality of pin simultaneously, has guaranteed the good contact between direct copper bonding DCB substrate 100 and a plurality of pin.

In an embodiment of the present invention, the DCB substrate 100 further includes a ceramic layer and a second copper layer, the ceramic layer has a first surface and a second surface opposite to the first surface, the first copper layer is disposed on the first surface, and the second copper layer is disposed on the second surface.

For example, in one example shown in fig. 1, a first copper layer is shown as a shaded portion, a ceramic layer is located below the first copper layer, and a second copper layer is located on the back surface of the ceramic layer (not shown). Wherein the second copper layer can function as a heat sink.

In addition, adopt the utility model discloses a packaging structure of direct copper bonding DCB substrate 100 need not PCB, realizes simply, and has reduced the cost of manufacture.

It should be noted that the direct copper bonding DCB substrate of the present invention is described above with reference to the direct copper bonding DCB substrate 100 shown in fig. 1. It is understood that the specific shape and arrangement of the parts in the DCB substrate can be adjusted by those skilled in the art according to the actual needs, and the present invention is not limited thereto.

The utility model discloses an above embodiment provides a direct copper bonding DCB substrate, and the packaging structure's that adopts this direct copper bonding DCB substrate power module has higher power level, and the volume is less and have good heat-sinking capability.

It is to be understood that even though some presently contemplated embodiments have been discussed in the foregoing disclosure by way of various examples, it is to be understood that such detail is solely for that purpose and that the appended claims are not limited to the disclosed embodiments, but, on the contrary, are intended to cover all modifications and equivalent arrangements that are within the spirit and scope of the embodiments of the disclosure.

Having thus described the basic concept, it will be apparent to those skilled in the art that the foregoing disclosure is by way of example only, and is not intended to limit the present application. Various modifications, improvements and adaptations to the present application may occur to those skilled in the art, although not explicitly described herein. Such modifications, improvements and adaptations are proposed in the present application and thus fall within the spirit and scope of the exemplary embodiments of the present application.

Also, this application uses specific language to describe embodiments of the application. Reference throughout this specification to "one embodiment," "an embodiment," and/or "some embodiments" means that a particular feature, structure, or characteristic described in connection with at least one embodiment of the present application is included in at least one embodiment of the present application. Therefore, it is emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, some features, structures, or characteristics of one or more embodiments of the present application may be combined as appropriate.

Additionally, the order in which elements and sequences of the processes described herein are processed, the use of alphanumeric characters, or the use of other designations, is not intended to limit the order of the processes and methods described herein, unless explicitly claimed. While various presently contemplated embodiments have been discussed in the foregoing disclosure by way of example, it should be understood that such detail is solely for that purpose and that the appended claims are not limited to the disclosed embodiments, but, on the contrary, are intended to cover all modifications and equivalent arrangements that are within the spirit and scope of the embodiments herein disclosed. For example, although the system components described above may be implemented by hardware devices, they may also be implemented by software-only solutions, such as installing the described system on an existing server or mobile device.

Similarly, it should be noted that in the preceding description of embodiments of the application, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure aiding in the understanding of one or more of the embodiments. This method of disclosure, however, is not intended to require more features than are expressly recited in the claims. Indeed, the embodiments may be characterized as having less than all of the features of a single embodiment disclosed above.

Numerals describing the number of components, attributes, etc. are used in some embodiments, it being understood that such numerals used in the description of the embodiments are modified in some instances by the use of the modifier "about", "approximately" or "substantially". Unless otherwise indicated, "about", "approximately" or "substantially" indicates that the number allows a variation of ± 20%.

Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximations that may vary depending upon the desired properties of the individual embodiments. In some embodiments, the numerical parameter should take into account the specified significant digits and employ a general digit preserving approach. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the range are approximations, in the specific examples, such numerical values are set forth as precisely as possible within the scope of the application.

Although the present invention has been described with reference to the present specific embodiments, it will be understood by those skilled in the art that the above embodiments are merely illustrative of the present invention, and various equivalent changes and substitutions may be made without departing from the spirit of the present invention, and therefore, changes and modifications to the above embodiments within the spirit of the present invention will fall within the scope of the claims of the present application.

Claims (12)

1. A direct copper bonding DCB substrate having a first side and comprising a first copper layer comprising a first base island, a second base island, and a third base island;

the second base island partially surrounds the first base island, the third base island partially surrounds the second base island, the first base island, the second base island and the third base island respectively comprise a chip carrying table and a first leading-out end, the chip carrying table and the first leading-out end form a continuous conductive structure through copper-clad routing, the first leading-out ends of the first base island, the second base island and the third base island are sequentially arranged at the first end of the first side edge, and the chip carrying tables of the first base island, the second base island and the third base island are located at the second end, opposite to the first end, of the first side edge.

2. The direct copper bonding DCB substrate of claim 1, wherein said direct copper bonding DCB substrate is adapted to be electrically connected to at least a portion of said plurality of leads proximate to said first side by wire bonding, and said direct copper bonding DCB substrate is adapted to be electrically connected to at least a portion of said plurality of leads by soldering.

3. The direct copper-bonded DCB substrate of claim 1, further comprising a second side adjacent to the first side, and third and fourth sides opposite the first and second sides, respectively.

4. The direct copper bonding DCB substrate of claim 3, wherein said stage of said first base island is proximate to said fourth side, said stage of said second base island is proximate to said third side and said fourth side, and said stage of said third base island is proximate to said third side.

5. The direct copper bonding DCB substrate of claim 3, wherein the first copper layer further comprises a fourth base island proximate to and partially surrounding the second and third side edges, the fourth base island comprising a stage and a first type of terminal.

6. The direct copper bonding DCB substrate of claim 1 wherein the first copper layer further comprises a fifth base island proximate the first side edge, the first base island partially surrounding the fifth base island.

7. The direct copper bonding DCB substrate of claim 5, wherein said first type of terminals of said first, second, third and fourth base islands are adapted to be soldered to corresponding leads, respectively.

8. The direct copper bonding DCB substrate of claim 5, wherein said first, second and third base islands are each adapted to have one low-side power device disposed thereon, and said fourth base island is adapted to have three high-side power devices disposed thereon.

9. The direct copper bonding DCB substrate of claim 6, wherein a drive controller is adapted to be disposed on the fifth base island.

10. The direct copper bonding DCB substrate of claim 3, wherein the first copper layer further comprises three second type terminals adjacent to the fourth side.

11. The direct copper bonding DCB substrate of claim 10, wherein the second type of terminals are adapted to be soldered to respective leads.

12. The direct copper-bond DCB substrate according to claim 1, further comprising a ceramic layer having a first surface and a second surface opposite the first surface, the first copper layer being disposed on the first surface, and a second copper layer being disposed on the second surface.

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