CN212934586U - Base in semiconductor processing equipment and semiconductor processing equipment - Google Patents
Base in semiconductor processing equipment and semiconductor processing equipment Download PDFInfo
- Publication number
- CN212934586U CN212934586U CN202021604139.4U CN202021604139U CN212934586U CN 212934586 U CN212934586 U CN 212934586U CN 202021604139 U CN202021604139 U CN 202021604139U CN 212934586 U CN212934586 U CN 212934586U
- Authority
- CN
- China
- Prior art keywords
- substrate
- annular groove
- groove
- arc
- shaped recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The utility model provides a base in semiconductor process equipment and semiconductor process equipment, wherein, the base of semiconductor equipment is used for bearing the substrate, the base includes the base body and sets up the holding tank that is used for holding the substrate in the base body, be provided with supporting part and annular groove in the holding tank, the supporting part is used for supporting the substrate, and be provided with the arc on the up end that supporting part and substrate contacted; the annular groove is arranged around the supporting part along the inner peripheral wall of the accommodating groove in a surrounding mode, the radial size of the supporting part is smaller than that of the substrate, and when the supporting part supports the substrate, the edge part of the substrate with the preset width is suspended above the annular groove. The utility model provides a semiconductor equipment's base and semiconductor equipment can restrain the expansion of crackle, reduces the cracked probability of substrate to improve the yield and the productivity of product.
Description
Technical Field
The utility model relates to a semiconductor equipment technical field specifically relates to a base and semiconductor process equipment among semiconductor process equipment.
Background
When a semiconductor epitaxial process is performed by using a Chemical Vapor Deposition (CVD) technique, it is generally necessary to heat a substrate and control a reaction gas to flow through the heated substrate to form a silicon elemental film on a surface of the substrate.
In a conventional semiconductor epitaxial process, a susceptor 11 as shown in fig. 1 is generally used to support and heat a substrate 14, a receiving groove 12 is disposed in the susceptor 11, and a bottom surface 13 of the receiving groove 12 is a spherical surface, in the semiconductor epitaxial process, the receiving groove 12 is used to receive the substrate 14, and the bottom surface 13 of the receiving groove 12, which is a spherical surface, supports an edge of the substrate 14 to support the substrate 14. The susceptor 11 may heat the substrate 14 carried thereon by means of heat transfer, and may itself be heated by electromagnetic induction generated by a coil disposed thereabout.
However, in various processes of semiconductor processing, it is generally necessary to edge-wash the substrate 14, that is, to chamfer a certain width of the edge portion of the substrate 14 to eliminate stress generated during the process of back sealing or the like, so that the chamfered edge portion may have a minute crack due to damage to the substrate 14 during the edge-wash. In the susceptor 11 shown in fig. 1, since the bottom surface 13 of the receiving groove 12 is spherical, only the edge of the substrate 14 is in direct contact with the bottom surface 13 of the receiving groove 12, which is spherical, and the central region of the substrate 14 is not in direct contact with the bottom surface 13 of the receiving groove 12, which makes the temperature of the edge of the substrate 14 higher than that of the central region of the substrate 14, so that the thermal stress field at the edge of the substrate 14 is in a tensile stress state, and the tensile stress contributes to the expansion of cracks, which may eventually lead to cracking fragments of the substrate 14.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least, provide a base and semiconductor process equipment among semiconductor process equipment, its expansion that can restrain the crackle reduces the cracked probability of substrate to improve the yield and the productivity of product.
The base comprises a base body and a holding groove which is arranged in the base body and used for holding the substrate, wherein a supporting part and an annular groove are arranged in the holding groove, the supporting part is used for supporting the substrate, and an arc-shaped recess is arranged on the upper end surface of the supporting part, which is contacted with the substrate; the annular groove is arranged around the supporting portion in a surrounding mode along the inner peripheral wall of the accommodating groove, the radial size of the supporting portion is smaller than that of the substrate, and when the supporting portion supports the substrate, the edge portion of the substrate with the preset width is suspended above the annular groove.
Preferably, the periphery wall of annular groove with the internal perisporium parallel and level of holding tank, the value range of the width of annular groove is L > (D-D)/2+ s, wherein, L is the width of annular groove, D is the diameter of holding tank, D is the diameter of substrate, s is predetermine the width.
Preferably, the groove bottom of the annular groove is flush with the arc bottom of the arc-shaped recess.
Preferably, the bottom of the arc-shaped recess is provided with a diversion trench, and the diversion trench is respectively communicated with the arc-shaped recess and the annular groove and is used for guiding the gas in the arc-shaped recess to the annular groove.
Preferably, the bottom of the arc-shaped recess is provided with a plurality of flow guide grooves, and the flow guide grooves are radially distributed by taking the axis of the arc-shaped recess as the center.
Preferably, a plurality of the guide grooves are communicated with each other.
Preferably, the bottom of the diversion trench is flush with the bottom of the arc-shaped recess.
Preferably, the depth of the flow guide groove ranges from 0.1mm to 0.2 mm.
Preferably, the width of the guiding groove has a value range of b < D-D, where b is the width of the guiding groove, D is the diameter of the accommodating groove, and D is the diameter of the substrate.
The utility model also provides a semiconductor process equipment, include if the utility model provides a base, the base is used for bearing the weight of the substrate.
The utility model discloses following beneficial effect has:
the utility model provides a base among the semiconductor process equipment sets up supporting part and annular groove in the holding tank to make the annular groove encircle to set up around the supporting part along the internal perisporium of holding tank, and make the radial dimension of supporting part be less than the radial dimension of substrate, so that the supporting part is when supporting the substrate, the marginal portion of the width of predetermineeing of substrate hangs in the annular groove top, and the marginal portion of the width of predetermineeing of supporting part and substrate contact is close to the center of substrate for the substrate. That is, when the support portion supports the substrate, the edge portion of the substrate with the preset width is in a suspended state and is not in contact with the support portion, and a portion close to the center of the substrate relative to the edge portion with the preset width of the substrate is in contact with the support portion. Therefore, in the semiconductor process, the heat of the pedestal can be only indirectly transferred to the edge part of the preset width of the substrate through the gas, but not directly transferred to the edge part of the preset width of the substrate through the supporting part, and the part of the substrate which is close to the center of the substrate relative to the edge part of the preset width of the substrate and is in direct contact with the supporting part still directly transfers the heat through the supporting part, because the effect of indirectly transferring the heat through the gas is far worse than the effect of directly transferring the heat through the supporting part, therefore, in the semiconductor process, the temperature of the edge part of the preset width of the substrate is lower than that of the part of the substrate which is close to the center of the substrate and is in direct contact with the supporting part relative to the edge part of the preset width of the substrate, so that the thermal stress field of the edge part of the preset width of the substrate is in a compressive stress state, thereby improving the yield and productivity of the product.
The utility model provides a semiconductor process equipment with the help of the utility model provides a base among the semiconductor process equipment bears the substrate to can restrain the expansion of crackle, reduce the cracked probability of substrate, thereby improve the yield and the productivity of product.
Drawings
FIG. 1 is a schematic diagram of a base according to the prior art;
fig. 2 is a schematic front view of a base of a semiconductor device according to an embodiment of the present invention;
FIG. 3 is a schematic view of a crack on an edge portion of a predetermined width of a substrate in an embodiment of the invention;
fig. 4 is a schematic top view of a base of a semiconductor device according to an embodiment of the present invention;
fig. 5 is a schematic top-view partially enlarged structural view of a base of a semiconductor device according to an embodiment of the present invention;
description of reference numerals:
11-a base; 12-accommodating grooves; 13-a bottom surface; 14-a substrate; 21-a base body; 22-accommodating grooves; 23-a support; 231-arc-shaped recess; 24-an annular groove; 25-a diversion trench; 31-a substrate; 32-edge portion.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the base and the semiconductor processing apparatus in the semiconductor processing apparatus provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the present embodiment provides a susceptor in semiconductor processing equipment, for carrying a substrate 31, the susceptor comprising a susceptor body 21 and a receiving groove 22 provided in the susceptor body 21 for receiving the substrate 31, the receiving groove 22 being provided therein with a supporting portion 23 and an annular groove 24, wherein the supporting portion 23 is used for supporting the substrate 31, and an upper end surface of the supporting portion 23 contacting the substrate 31 is provided with an arc-shaped recess 231; the annular groove 24 is circumferentially provided around the support 23 along the inner peripheral wall of the accommodation groove 22, the radial dimension of the support 23 is smaller than that of the substrate 31, and the edge portion 32 of the substrate 31 of a predetermined width overhangs the annular groove 24 when the support 23 supports the substrate 31.
In the susceptor in the semiconductor processing equipment provided by the embodiment, the supporting portion 23 and the annular groove 24 are arranged in the accommodating groove 22, the annular groove 24 is arranged around the supporting portion 23 along the inner peripheral wall of the accommodating groove 22, and the radial dimension of the supporting portion 23 is smaller than that of the substrate 31, so that when the supporting portion 23 supports the substrate 31, the edge portion 32 of the substrate 31 with the preset width is suspended above the annular groove 24, and the portion of the supporting portion 23 contacting with the substrate is close to the center of the substrate 31 relative to the edge portion 32 of the substrate 31 with the preset width. That is, when the support portion 23 supports the substrate 31, the edge portion 32 of the substrate 31 having the predetermined width is in a floating state and is not in contact with the support portion 23, and a portion close to the center of the substrate 31 with respect to the edge portion 32 of the substrate 31 having the predetermined width is in contact with the support portion 23. This makes it possible that, in the semiconductor process, the heat of the susceptor is only indirectly transferred to the edge portion 32 of the predetermined width of the substrate 31 through the gas, and is not directly transferred to the edge portion 32 of the predetermined width of the substrate 31 through the support 23, and the portion of the substrate 31, which is close to the center of the substrate 31 with respect to the edge portion 32 of the predetermined width of the substrate 31 and is in direct contact with the support 23, still directly transfers the heat through the support 23, and since the effect of indirectly transferring the heat through the gas is far inferior to the effect of directly transferring the heat through the support 23, in the semiconductor process, the temperature of the edge portion 32 of the predetermined width of the substrate 31 is lower than the temperature of the portion of the substrate 31, which is in direct contact with the support 23, with respect to the portion thereof close to the center of the substrate 31, which makes the thermal stress field of the edge portion 32 of the predetermined width of the, therefore, the expansion of cracks can be inhibited, the probability of cracking of the substrate 31 is reduced, and the yield and the productivity of products are improved.
In practical applications, the preset width of the edge portion 32 of the substrate 31 may be greater than the width of the area of the substrate 31 requiring the edge washing process, for example, in practical applications, the width of the area of the substrate 31 requiring the edge washing process is generally 3mm, and the preset width of the edge portion 32 of the substrate 31 may be greater than 3mm, so that when the support 23 supports the substrate 31, the area of the substrate 31 requiring the edge washing process is completely suspended above the annular groove 24, that is, the area of the substrate 31 requiring the edge washing process is completely not in contact with the support 23.
This makes the area of the substrate 31 subjected to the edge-washing process directly heated by the support 23 in the semiconductor process closer to the center of the substrate 31 than the area subjected to the edge-washing process, and the area of the substrate 31 subjected to the edge-washing process is not in contact with the support 23 at all, so that the area of the substrate 31 subjected to the edge-washing process is only heated by the indirect heat transfer from the gas, and the indirect heat transfer from the gas is much less effective than the direct heat transfer from the support 23, so that in the semiconductor process, the temperature of the area of the substrate 31 subjected to the edge-washing process is lower than the temperature of the portion of the substrate 31 directly contacted with the support 23 relative to the area of the substrate 31 near the center thereof, so that the thermal stress field of the area of the substrate 31 subjected to the edge-washing process is in a compressive stress state (as indicated by force F in fig. 3) which is opposite to the tensile stress state, i.e. the stress directed toward the inside of the area of the substrate 31 subjected to the edge, so as to compress the crack in the area of the substrate 31 subjected to the edge-washing process inwards by means of the compressive stress, thereby inhibiting the expansion of the crack, reducing the probability of the fracture of the substrate 31 and further improving the yield and the productivity of the product.
Alternatively, the surface of the arc-shaped recess 231 may be spherical.
As shown in fig. 1, in a preferred embodiment of the present invention, the outer peripheral wall of the annular groove 24 can be flush with the inner peripheral wall of the accommodating groove 22, and the width of the annular groove 24 has a value range of L > (D-D)/2+ s, where L is the width of the annular groove 24, D is the diameter of the accommodating groove 22, D is the diameter of the substrate 31, and s is a predetermined width.
Specifically, in practical applications, the annular groove 24 can be formed closely to the inner peripheral wall of the receiving groove 22, so that the outer peripheral wall of the annular groove 24 is flush with the inner peripheral wall of the receiving groove 22, that is, the outer circumferential wall of the annular groove 24 is located on the same plane as the inner circumferential wall of the accommodation groove 22, so that when the support 23 supports the substrate 31, the distance between the outer peripheral wall of the annular groove 24 and the edge portion 32 of a predetermined width of the substrate 31 is increased, thereby, in the semiconductor process, the heat transferred from the susceptor to the edge portion 32 of the predetermined width of the substrate 31 is further reduced, to further lower the temperature of the edge portion 32 of the preset width of the substrate 31 than that of the portion in direct contact with the support 23 closer to the center of the substrate 31, therefore, the effect of inhibiting the expansion of the cracks can be further improved, the probability of the substrate 31 cracking is further reduced, and the yield and the productivity of the product are further improved.
In practical applications, when the outer circumferential wall of the annular groove 24 is flush with the inner circumferential wall of the accommodating groove 22, the width of the annular groove 24 may range from L > (D-D)/2+ s, where L is the width of the annular groove 24, D is the diameter of the accommodating groove 22, D is the diameter of the substrate 31, and s is the predetermined width. Such a design may allow the support portion 23 to support the substrate 31 at a position close to the center of the substrate 31 with respect to the edge portion 32 of the predetermined width of the substrate 31 when supporting the substrate 31, so as to suspend the edge portion 32 of the predetermined width of the substrate 31 above the annular groove 24 when the support portion 23 supports the substrate 31.
As shown in fig. 2, in a preferred embodiment of the present invention, the bottom of the annular groove 24 is flush with the bottom of the arc-shaped recess 231. By adopting the design, on the premise of keeping sufficient structural strength, when the support part 23 supports the substrate 31, the distance between the groove bottom of the annular groove 24 and the edge part 32 with the preset width of the substrate 31 is increased, so that in a semiconductor process, the heat transferred from the susceptor to the edge part 32 with the preset width of the substrate 31 is further reduced, the temperature of the edge part 32 with the preset width of the substrate 31 is further lower than that of a part, which is closer to the center of the substrate 31 and is in direct contact with the support part 23, the effect of inhibiting the expansion of cracks can be further improved, the probability of cracking of the substrate 31 is further reduced, and the yield and the productivity of products are further improved.
As shown in fig. 4, in a preferred embodiment of the present invention, a diversion trench 25 is disposed at the bottom of the arc-shaped recess 231, and the diversion trench 25 is respectively communicated with the arc-shaped recess 231 and the annular groove 24 for diverting the gas in the arc-shaped recess 231 to the annular groove 24.
This is because, during the process of placing the substrate 31 on the support 23, there is gas between the substrate 31 and the support 23, and if the gas cannot be guided out from between the substrate 31 and the support 23, when the substrate 31 is placed on the support 23, the gas existing in the arc-shaped recess 231 may cause the substrate 31 to slide relative to the support 23, so that the substrate 31 cannot be placed at a predetermined position relative to the support 23, and the edge portion 32 of the substrate 31 with a predetermined width may be brought into contact with the support 23. And by means of the diversion trench 25 which is opened at the bottom of the arc-shaped recess 231 and is respectively communicated with the arc-shaped recess 231 and the annular groove 24, the gas existing in the arc-shaped recess 231 can be guided out, so that the substrate 31 is prevented from sliding relative to the supporting part 23 when the substrate 31 is placed on the supporting part 23, the accuracy of placing the substrate 31 on the supporting part 23 is improved, meanwhile, when the substrate 31 is placed on the supporting part 23, the edge part 32 with the preset width of the substrate 31 is prevented from contacting with the supporting part 23, and the use stability of the base of the semiconductor device is improved.
Specifically, if the gas between the substrate 31 and the support 23 cannot be conducted out during the process of placing the substrate 31 on the support 23, so that the gas exists in the arc-shaped recess 231, the gas existing in the arc-shaped recess 231 may expand due to the heat of the susceptor during the semiconductor process, so that the substrate 31 slides relative to the support 23, so that the substrate 31 deviates from its preset position relative to the support 23, and the edge portion 32 of the substrate 31 having a preset width may be brought into contact with the support 23. And the gas existing in the arc-shaped recess 231 is guided out by the flow guide groove 25 which is arranged at the bottom of the arc-shaped recess 231 and is respectively communicated with the arc-shaped recess 231 and the annular groove 24, so that the substrate 31 can be prevented from sliding relative to the supporting part 23 in the semiconductor process, and meanwhile, the edge part 32 with the preset width of the substrate 31 is prevented from contacting with the supporting part 23 in the semiconductor process, and the use stability of the base of the semiconductor device is further improved.
Specifically, during the process of placing the substrate 31 on the support 23, the gas between the substrate 31 and the support 23 may enter the arc-shaped recess 231 and enter the guiding groove 25, and flow into the annular groove 24 communicating with the guiding groove 25 through the guiding groove 25, so that the gas in the arc-shaped recess 231 is guided into the annular groove 24 by the guiding groove 25 to exhaust the gas in the arc-shaped recess 231.
As shown in fig. 4, in a preferred embodiment of the present invention, a plurality of guiding grooves 25 may be disposed at the bottom of the arc-shaped recess 231, and the plurality of guiding grooves 25 are radially distributed around the axis of the arc-shaped recess 231.
By means of the plurality of guide grooves 25 radially distributed with the axis of the arc-shaped recess 231 as the center and formed at the bottom of the arc-shaped recess 231, the gas in the arc-shaped recess 231 can be quickly guided to different positions of the annular groove 24, so as to improve the guiding speed of the gas in the arc-shaped recess 231, and further improve the accuracy of placing the substrate 31 on the support portion 23 and the stability of the susceptor in use.
As shown in fig. 4, in a preferred embodiment of the present invention, the plurality of guiding grooves 25 may be communicated with each other. By communicating the plurality of flow guide grooves 25 with each other, the volume of the flow guide grooves 25 can be increased, and the amount of gas that can be guided out by the plurality of flow guide grooves 25 can be increased.
Moreover, by communicating the plurality of flow guide grooves 25 with each other, the gas entering one flow guide groove 25 of the plurality of flow guide grooves 25 can enter other flow guide grooves 25 communicated with the flow guide groove, so that in the process of placing the substrate 31 on the supporting portion 23, the gas in the arc-shaped recess 231 is prevented from being concentrated in one flow guide groove 25, the gas flowing in the flow guide groove 25 is prevented, and the gas entering the flow guide groove 25 can not be smoothly guided out, thereby improving the flow guide stability of the plurality of flow guide grooves 25.
In a preferred embodiment of the present invention, the bottom of the guiding groove 25 may be flush with the bottom of the arc recess 231. Such design can increase the degree of depth of guiding gutter 25 under the prerequisite that keeps enough structural strength to increase the volume of guiding gutter 25, improve the gaseous volume that guiding gutter 25 can be derived, avoid the jam of guiding gutter 25, cause gaseous flow in guiding gutter 25 to be obstructed.
Optionally, the depth of the diversion trench 25 may range from 0.1mm to 0.2 mm. Since the arc-shaped recess 231 has a radian, the depth range of the guide groove 25 refers to a height difference range between the edge of the arc-shaped recess 231 and the bottom of the guide groove 25, that is, a height difference range between the highest point of the arc-shaped recess 231 and the bottom of the guide groove 25.
As shown in fig. 4 and 5, in a preferred embodiment of the present invention, the width of the guiding groove 25 has a value range of b < D-D, where b is the width of the guiding groove 25, D is the diameter of the accommodating groove 22, and D is the diameter of the substrate 31. The design is to make the heat radiation intensity of the inner wall of the guiding groove 25 to the substrate 31 at the center of the guiding groove 25 higher than the heat radiation intensity of the inner peripheral wall of the accommodating groove 22 to the edge of the substrate 31, so as to further reduce the heat quantity transferred from the susceptor to the edge part 32 with the preset width of the substrate 31 in the semiconductor process, and further make the temperature of the edge part 32 with the preset width of the substrate 31 lower than the temperature of the part which is closer to the center of the substrate 31 and is in direct contact with the supporting part 23, thereby further improving the effect of inhibiting the expansion of cracks, further reducing the probability of the cracking of the substrate 31, and further improving the yield and productivity of products.
As shown in fig. 5, in particular, in order to make the intensity of heat radiation from the inner wall of guide channel 25 to substrate 31 located at the center of guide channel 25 higher than the intensity of heat radiation from the inner peripheral wall of accommodating groove 22 to the edge of substrate 31, it is necessary to make half of the width of guide channel 25 (as shown by length a in fig. 5) smaller than the distance between the inner peripheral wall of accommodating groove 22 and the edge of substrate 31 (as shown by length c in fig. 5), i.e., a < c, i.e., the distance between the edge of substrate 31 and the inner peripheral wall of accommodating groove 22 requiring the width of guide channel 25 to be less than twice, since the distance between the edge of substrate 31 and the inner peripheral wall of accommodating groove 22 is (D-D)/2, the distance between the edge of substrate 31 and the inner peripheral wall of accommodating groove 22 requiring the width of guide channel 25 to be less than twice is b < D-D, so that the intensity of heat radiation from the inner wall of guide channel 25 to substrate 31 located at the center of guide channel 25 is higher than the intensity The peripheral wall has a thermal radiation intensity to the edge of the substrate 31, so that the temperature on the substrate 31 supported by the support 23 at the place where the flow guide grooves 25 communicate with the annular groove 24 (as indicated by the point a in fig. 5) is higher than the temperature at the edge of the substrate 31 far from the center of the substrate 31 (as indicated by the point e in fig. 5), and thus the temperature of the edge portion 32 of the substrate 31 of a predetermined width is lower than the temperature of the portion in direct contact with the support 23 closer to the center of the substrate 31 in the semiconductor process.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, including the pedestal in the semiconductor processing apparatus provided by the above embodiment, where the pedestal is used for bearing a substrate.
In the semiconductor device provided by the embodiment, the susceptor in the semiconductor processing equipment provided by the embodiment is used for bearing the substrate, so that the expansion of cracks can be inhibited, the probability of substrate fracture is reduced, and the yield and the productivity of products are improved.
To sum up, the embodiment of the utility model provides a base and semiconductor process equipment among the semiconductor process equipment can restrain the expansion of crackle, reduce the cracked probability of substrate to improve the yield and the productivity of product.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A pedestal in semiconductor process equipment is used for bearing a substrate and comprises a pedestal body and an accommodating groove which is arranged in the pedestal body and used for accommodating the substrate, and is characterized in that a supporting part and an annular groove are arranged in the accommodating groove, wherein the supporting part is used for supporting the substrate, and an arc-shaped recess is arranged on the upper end surface of the supporting part, which is in contact with the substrate; the annular groove is arranged around the supporting portion in a surrounding mode along the inner peripheral wall of the accommodating groove, the radial size of the supporting portion is smaller than that of the substrate, and when the supporting portion supports the substrate, the edge portion of the substrate with the preset width is suspended above the annular groove.
2. The susceptor of claim 1, wherein an outer peripheral wall of the annular groove is flush with an inner peripheral wall of the receiving groove, and a width of the annular groove has a value in a range of L > (D-D)/2+ s, where L is the width of the annular groove, D is a diameter of the receiving groove, D is a diameter of the substrate, and s is the predetermined width.
3. The pedestal of claim 1, wherein a floor of the annular groove is flush with a floor of the arcuate depression.
4. The susceptor of claim 1, wherein a flow guide groove is formed at a bottom of the arc-shaped recess, and the flow guide groove is respectively communicated with the arc-shaped recess and the annular groove and is used for guiding the gas in the arc-shaped recess to the annular groove.
5. The pedestal of claim 4, wherein the bottom of the arc-shaped recess is provided with a plurality of flow-guiding grooves, and the flow-guiding grooves are radially distributed around the axis of the arc-shaped recess.
6. The base of claim 5, wherein a plurality of said channels are interconnected.
7. The pedestal of claim 4, wherein the bottom of the channel is flush with the bottom of the arcuate depression.
8. The pedestal of claim 7, wherein the depth of the flow guide groove ranges from 0.1mm to 0.2 mm.
9. The susceptor of claim 4, wherein a width of the guiding trench ranges from b < D-D, where b is the width of the guiding trench, D is a diameter of the receiving groove, and D is a diameter of the substrate.
10. A semiconductor processing apparatus comprising a susceptor according to any one of claims 1 to 9 for carrying a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021604139.4U CN212934586U (en) | 2020-08-05 | 2020-08-05 | Base in semiconductor processing equipment and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021604139.4U CN212934586U (en) | 2020-08-05 | 2020-08-05 | Base in semiconductor processing equipment and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212934586U true CN212934586U (en) | 2021-04-09 |
Family
ID=75334791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021604139.4U Active CN212934586U (en) | 2020-08-05 | 2020-08-05 | Base in semiconductor processing equipment and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212934586U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113652742A (en) * | 2021-06-22 | 2021-11-16 | 华灿光电（浙江）有限公司 | Graphite substrate for improving wavelength uniformity of epitaxial wafer |
| CN114540948A (en) * | 2022-02-17 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Base in semiconductor processing equipment and semiconductor processing equipment |
| CN115565852A (en) * | 2022-12-06 | 2023-01-03 | 西安奕斯伟材料科技有限公司 | Method and apparatus for back sealing silicon wafer |
-
2020
- 2020-08-05 CN CN202021604139.4U patent/CN212934586U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113652742A (en) * | 2021-06-22 | 2021-11-16 | 华灿光电（浙江）有限公司 | Graphite substrate for improving wavelength uniformity of epitaxial wafer |
| CN114540948A (en) * | 2022-02-17 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Base in semiconductor processing equipment and semiconductor processing equipment |
| CN115565852A (en) * | 2022-12-06 | 2023-01-03 | 西安奕斯伟材料科技有限公司 | Method and apparatus for back sealing silicon wafer |
| CN115565852B (en) * | 2022-12-06 | 2024-05-28 | 西安奕斯伟材料科技股份有限公司 | Method and apparatus for back-sealing silicon wafers |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN212934586U (en) | Base in semiconductor processing equipment and semiconductor processing equipment | |
| US10269614B2 (en) | Susceptor design to reduce edge thermal peak | |
| EP1036406B1 (en) | Improved low mass wafer support system | |
| US8888087B2 (en) | Susceptor support portion and epitaxial growth apparatus including susceptor support portion | |
| US10119192B2 (en) | EPI base ring | |
| EP1719167B1 (en) | Substrate support system for reduced autodoping and backside deposition | |
| US20100107974A1 (en) | Substrate holder with varying density | |
| KR102164610B1 (en) | Thermal treating device with a substrate carrier ring which can be mounted on a substrate carrier base | |
| US10458709B2 (en) | Semiconductor wafer support ring for heat treatment | |
| KR20180082574A (en) | Wafer support mechanism, chemical vapor deposition apparatus and manufacturing method of epitaxial wafer | |
| US6031205A (en) | Thermal treatment apparatus with thermal protection members intercepting thermal radiation at or above a predetermined angle | |
| KR20170023978A (en) | Substrate thermal control in an epi chamber | |
| CN104600020B (en) | Wafer carrier, annealing device and heat treatment method | |
| JP2004200678A5 (en) | ||
| CN105441906A (en) | Substrate processing apparatus and method of fabricating substrate loading unit | |
| US10815585B2 (en) | Susceptor with substrate clamped by underpressure, and reactor for epitaxial deposition | |
| CN215288964U (en) | Wafer tray and chemical vapor deposition equipment | |
| US20230402311A1 (en) | Tab arrangement for retaining support elements of substrate support | |
| EP1308989A2 (en) | Improved low mass wafer support system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |