CN212932756U - Current sensor - Google Patents
Current sensor Download PDFInfo
- Publication number
- CN212932756U CN212932756U CN202021016896.XU CN202021016896U CN212932756U CN 212932756 U CN212932756 U CN 212932756U CN 202021016896 U CN202021016896 U CN 202021016896U CN 212932756 U CN212932756 U CN 212932756U
- Authority
- CN
- China
- Prior art keywords
- current
- magnetic
- sensor
- soft
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
The utility model provides a current sensor, which comprises a current-carrying conductor, a magnetic sensor and a soft magnet, wherein the current-carrying conductor is used for providing a flowing channel for the current to be measured; the magnetic sensor is positioned around the current carrying conductor and detects the current to be measured according to a magnetic field at the magnetic sensor; the soft-magnetic body is located around the magnetic sensor for amplifying a magnetic field generated at the magnetic sensor by the current I in the current carrying conductor. Compared with the prior art, the utility model provides a current sensor includes current-carrying conductor, magnetic sensor and soft magnet, it is right that soft magnet is right current in the current-carrying conductor is in the magnetic field that hall sensor department produced plays the effect of enlargiing to current sensor's sensitivity has been increased.
Description
[ technical field ] A method for producing a semiconductor device
The utility model relates to a current sensor technical field especially relates to a current sensor with high accuracy, high bandwidth.
[ background of the invention ]
Current sensors for measuring the magnitude of current are widely used in various electronic devices. For a traditional current sensor based on the hall effect, the accuracy of the current sensor is poor due to the low sensitivity of the hall sensor.
Therefore, it is necessary to provide a technical solution to solve the above problems.
[ Utility model ] content
An object of the utility model is to provide a current sensor, it has high accuracy, high bandwidth.
According to one aspect of the present invention, the present invention provides a current sensor, comprising a current-carrying conductor, a magnetic sensor and a soft magnet, wherein the current-carrying conductor is used for providing a passage for a current to be measured; the magnetic sensor is positioned around the current carrying conductor and detects the current to be measured according to a magnetic field at the magnetic sensor; the soft-magnetic body is located around the magnetic sensor for amplifying a magnetic field generated at the magnetic sensor by a current in the current carrying conductor.
Further, the magnetic sensor includes a first magnetic sensor unit and a second magnetic sensor unit for forming a differential output; the soft-magnetic body includes a first soft-magnetic body unit and a second soft-magnetic body unit, the first soft-magnetic body unit is located around the first magnetic sensor unit, and the second soft-magnetic body unit is located around the second magnetic sensor unit.
Further, the first soft-magnetic unit is located right above the first magnetic sensor unit, and the second soft-magnetic unit is located right above the second magnetic sensor unit; or the first soft-magnetic unit is positioned right below the first magnetic sensor unit, and the second soft-magnetic unit is positioned right below the second magnetic sensor unit.
Further, the current carrying conductor includes a first leg portion, a second leg portion, and a connecting portion, the first leg portion and the second leg portion being located on the same side of the connecting portion; one end of the first leg portion serves as one end of the current-carrying conductor, and the other end of the first leg portion is connected with one end of the connecting portion; one end of the second leg portion serves as the other end of the current-carrying conductor, and the other end of the second leg portion is connected with the other end of the connecting portion.
Further, the magnetic sensor is a hall sensor, and the first magnetic sensor unit and the second magnetic sensor unit are respectively located on the front side and the rear side of the connecting portion.
Further, the front side of the connecting part is the side where the first leg part and the second leg part are located; the rear side of the connecting part is the other side opposite to the side where the first leg part and the second leg part are located.
Further, the soft magnet is made of a soft magnetic material with high magnetic permeability.
Further, the magnetic sensor is made of a III-V semiconductor material.
Further, the III-V group semiconductor material is GaAs, InAs or InSb.
Further, the bandwidth of the current sensor exceeds 1 MHz.
Compared with the prior art, the utility model provides a current sensor includes current-carrying conductor, magnetic sensor and soft magnet, it is right that soft magnet is right current in the current-carrying conductor is in the magnetic field that hall sensor department produced plays the effect of enlargiing to current sensor's sensitivity has been increased.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor. Wherein:
FIG. 1 is a schematic diagram of a conventional current sensor;
FIG. 2 is a schematic sectional view taken along line A-A of FIG. 1;
fig. 3 is a schematic structural diagram of a current sensor according to an embodiment of the present invention;
FIG. 4 is a schematic sectional view taken along line B-B of FIG. 3;
fig. 5 is a graph showing the dependence of the output signal amplitude of the current sensor shown in fig. 3 according to the present invention on the current frequency.
[ detailed description ] embodiments
In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with at least one implementation of the invention is included. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Unless otherwise specified, the terms connected, and connected as used herein mean electrically connected, directly or indirectly.
Fig. 1 is a schematic structural diagram of a conventional current sensor. The current sensor shown in fig. 1 comprises a current carrying conductor 101 and a hall sensor 102. The current carrying conductor 101 includes a first leg portion 101a, a second leg portion 101b, and a connecting portion 101c between the first leg portion 101a and the second leg portion 101 b.
Please refer to fig. 2, which is a cross-sectional view along line a-a of fig. 1. The hall sensor 102 includes a first hall sensor unit 102a and a second hall sensor unit 102 b. The current I in the current carrying conductor 101 generates a magnetic field H at the first Hall sensor unit 102a11A magnetic field-H is generated at the second Hall sensor unit 102b12. The output of the first hall sensor unit 102a is V11=S[(H11/I)I+H0]Where S is the sensitivity of the Hall sensor unit with respect to the magnetic field H0An external magnetic field; the output of the second hall sensor unit 102b is V12=S[-(H12/I)I+H0](ii) a The output of the Hall sensor 102 is V1=V11-V12=S[(H11+H12)/I]I. In the conventional hall effect based current sensor shown in fig. 1, the accuracy of the current sensor is poor due to the low sensitivity of the hall sensor 102.
Please refer to fig. 3, which is a schematic structural diagram of a current sensor with high precision and high bandwidth according to an embodiment of the present invention; please refer to fig. 4, which is a cross-sectional view along line B-B of fig. 3. As can be seen from fig. 3 and 4, the current sensor shown in fig. 3 comprises a current carrying conductor 201, a magnetic sensor 202 and a soft-magnetic body 203.
The current-carrying conductor 201 is used for providing a flowing channel for a measured current I, so that the measured current I can flow through the current-carrying conductor 201; the soft-magnetic body 203 is located around the magnetic sensor 202 and is used for amplifying the magnetic field (or magnetic induction) generated at the magnetic sensor 202 by the current I in the current-carrying conductor 201; the magnetic sensor 202 is located around the current carrying conductor 201 and detects the current I to be measured from the magnetic field at the magnetic sensor 202.
The current carrying conductor 201 is a U-shaped conductor. The current carrying conductor 201 includes a first leg 201a, a second leg 201b, and a connection portion 201c between the first leg 201a and the second leg 201 b. The first leg portion 201a and the second leg portion 201b are located on the same side of the connection portion 201c, one end of the first leg portion 201a serves as one end of the current-carrying conductor 201, and the other end of the first leg portion 201a is connected to one end of the connection portion 201 c; one end of the second leg portion 201b serves as the other end of the current-carrying conductor 201, and the other end of the second leg portion 201b is connected to the other end of the connection portion 201 c. In the particular embodiment shown in fig. 3, the first leg 201a and the second leg 201b are both straight conductors.
The current I to be measured flows in from one end of the first leg 201a, sequentially flows through the first leg 201a, the connecting portion 201c, and the second leg 201b, and flows out from one end of the second leg 201 b.
The magnetic sensor 202 is a hall sensor, and includes a first hall sensor unit 202a and a second hall sensor unit 202b, and the first hall sensor unit 202a and the second hall sensor unit 202b are located around the U-shaped conductor 201 to form a differential output. In the specific embodiment shown in fig. 3, the first hall sensor unit 202a and the second hall sensor unit 202b are respectively located on the front side (which is the side where the first leg 201a and the second leg 201b are located) and the rear side (which is the other side opposite to the side where the first leg 201a and the second leg 201b are located) of the connecting portion 201 c.
In one embodiment, the Hall sensor 202 is a III-V semiconductor material. In a preferred embodiment, the Hall sensor 202 is a high electron mobility group III-V semiconductor material GaAs (gallium arsenide), InAs (indium arsenide), and InSb (indium antimonide), which may also be Si.
The soft-magnetic body 203 comprises a first soft-magnetic unit 203a and a second soft-magnetic unit 203b, the first soft-magnetic unit 203a being located around the first hall sensor unit 202a, the second soft-magnetic unit 203b being located around the second hall sensor unit. In a preferred embodiment, the first soft-magnetic element 203a and the second soft-magnetic element 203b are made of a soft magnetic material with a high magnetic permeability.
In the particular embodiment shown in FIG. 3, the first soft-magnetic cell 203a is located directly above the first Hall sensor cell 202a, and the second soft-magnetic cell 203b is located directly above the second Hall sensor cell 202 b. The soft-magnetic body 203 amplifies the magnetic field generated at the hall sensor 202 by the current I in the current carrying conductor 201 by a factor G, wherein G>1. The current I in the current carrying conductor 201, in the presence of the soft-magnetic body 203, generates a magnetic field GH at the first Hall sensor cell 202a21A magnetic field-GH is generated at the second Hall sensor cell 202b22. The output of the first hall sensor unit 202a is V21=S[(GH21/I)I+GH0]Where S is the sensitivity of the Hall sensor unit with respect to the magnetic field H0An external magnetic field; the output of the second hall sensor unit 202b is V22=S[-(GH22/I)I+GH0](ii) a The output of the Hall sensor 202 is V2=V21-V22=S[G(H21+H22)/I]I. For traditional current sensor, the utility model provides a current sensor will promote G doubly for the sensitivity of electric current.
Please refer to fig. 5, which is a graph showing the dependence of the output signal amplitude with the current frequency of the current sensor with high accuracy and high bandwidth shown in fig. 3 according to the present invention, as can be seen from fig. 5, the bandwidth of the current sensor in the present invention exceeds 1 MHz.
It is specifically noted that in another embodiment, the first soft-magnetic unit 203a may be located directly below the first Hall sensor unit 202a and the second soft-magnetic unit 203b may be located directly below the second Hall sensor unit 202 b. In one embodiment, the thickness of the first soft-magnetic cell 203a is greater than the thickness of the first Hall sensor cell 202 a; the thickness of the second soft-magnetic cell 203b is greater than the thickness of the second hall sensor cell 202 b.
To sum up, the current sensor of the present invention comprises the current-carrying conductor 201, the magnetic sensor 202 and the soft magnet 203, the soft magnet 203 is right the current in the current-carrying conductor 201 is in the magnetic field generated at the hall sensor 202 plays an amplifying role, thereby increasing the sensitivity of the current sensor. And simultaneously, the utility model provides a current sensor's bandwidth surpasss 1 MHz.
The "U-shaped" herein refers to a shape similar to U in a broad sense, and does not need to be strictly consistent with the shape of the letter U, and certain modifications can be made.
In the present invention, the terms "connected", "connecting", and the like denote electrical connections, and, unless otherwise specified, may denote direct or indirect electrical connections.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiment, but all equivalent modifications or changes made by those skilled in the art according to the present invention should be included in the protection scope of the claims.
Claims (10)
1. A current sensor, characterized in that it comprises a current carrying conductor, a magnetic sensor and a soft-magnetic body,
the current-carrying conductor is used for providing a flow channel for the current to be measured;
the magnetic sensor is positioned around the current carrying conductor and detects the current to be measured according to a magnetic field at the magnetic sensor;
the soft-magnetic body is located around the magnetic sensor for amplifying a magnetic field generated at the magnetic sensor by a current in the current carrying conductor.
2. The current sensor of claim 1,
the magnetic sensor includes a first magnetic sensor cell and a second magnetic sensor cell for forming a differential output;
the soft-magnetic body includes a first soft-magnetic body unit and a second soft-magnetic body unit, the first soft-magnetic body unit is located around the first magnetic sensor unit, and the second soft-magnetic body unit is located around the second magnetic sensor unit.
3. The current sensor of claim 2,
the first soft-magnetic unit is positioned right above the first magnetic sensor unit, and the second soft-magnetic unit is positioned right above the second magnetic sensor unit; or
The first soft-magnetic unit is located directly below the first magnetic sensor unit, and the second soft-magnetic unit is located directly below the second magnetic sensor unit.
4. The current sensor of claim 2, wherein the current carrying conductor includes a first leg, a second leg, and a connection,
the first leg and the second leg are located on the same side of the connecting portion;
one end of the first leg portion serves as one end of the current-carrying conductor, and the other end of the first leg portion is connected with one end of the connecting portion;
one end of the second leg portion serves as the other end of the current-carrying conductor, and the other end of the second leg portion is connected with the other end of the connecting portion.
5. The current sensor of claim 4,
the magnetic sensor is a hall sensor,
the first and second magnetic sensor units are located on front and rear sides of the connecting portion, respectively.
6. The current sensor of claim 5,
the front side of the connecting part is the side where the first leg part and the second leg part are located;
the rear side of the connecting part is the other side opposite to the side where the first leg part and the second leg part are located.
7. The current sensor of claim 1,
the soft magnet is made of a soft magnetic material with high magnetic permeability.
8. The current sensor of claim 1,
the magnetic sensor is made of a group III-V semiconductor material.
9. The current sensor of claim 8,
the III-V semiconductor material is GaAs, InAs or InSb.
10. The current sensor of claim 1,
the bandwidth of the current sensor exceeds 1 MHz.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202021016896.XU CN212932756U (en) | 2020-06-05 | 2020-06-05 | Current sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202021016896.XU CN212932756U (en) | 2020-06-05 | 2020-06-05 | Current sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
CN212932756U true CN212932756U (en) | 2021-04-09 |
Family
ID=75320149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202021016896.XU Active CN212932756U (en) | 2020-06-05 | 2020-06-05 | Current sensor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN212932756U (en) |
-
2020
- 2020-06-05 CN CN202021016896.XU patent/CN212932756U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1942527B1 (en) | Spin transistor using stray magnetic field | |
KR101016437B1 (en) | Reconfigurable logic device using spin accumulation and diffusion | |
JP2007171156A (en) | Current-detecting element, and manufacturing method therefor | |
WO2007102885A3 (en) | Magnetic tunnel junction pressure sensors and methods | |
US8440512B2 (en) | Circuits and methods for improved FET matching | |
US20080129284A1 (en) | Current measuring device | |
US20200153075A1 (en) | Branch-line coupler | |
CN111562420A (en) | Current sensor | |
CN212932756U (en) | Current sensor | |
CN113411074B (en) | Hall sensor switch and electronic equipment | |
Brückner et al. | Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm‐wave applications | |
CN109541279A (en) | Bypass type current sensor | |
WO2007053341A3 (en) | Methods of implementing magnetic tunnel junction current sensors | |
CN212932757U (en) | Current sensor | |
CN209446651U (en) | Bypass type current sensor | |
CN212932753U (en) | Current sensor | |
CN111551766A (en) | Current sensor | |
CN212932751U (en) | Current sensor system | |
Sugiyama et al. | Highly sensitive split-contact magnetoresistor with AlAs/GaAs superlattice structures | |
CN111551768A (en) | Current sensor | |
CN212932749U (en) | Current sensor | |
CN211928005U (en) | Current sensor with dual thickness conductor | |
US9246206B2 (en) | Transmission-line transformer in which signal efficiency is maximised | |
US20200209286A1 (en) | Glass isolation device and a manufacturing method thereof, and a current sensor | |
CN212932760U (en) | Current sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |