CN212932449U - High-resolution in-situ fluid turbulence heating chip for transmission electron microscope - Google Patents
High-resolution in-situ fluid turbulence heating chip for transmission electron microscope Download PDFInfo
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- CN212932449U CN212932449U CN202021813450.XU CN202021813450U CN212932449U CN 212932449 U CN212932449 U CN 212932449U CN 202021813450 U CN202021813450 U CN 202021813450U CN 212932449 U CN212932449 U CN 212932449U
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Abstract
The utility model relates to a high-resolution in-situ fluid turbulence heating chip for a transmission electron microscope, which has the structure that an upper piece and a lower piece are combined through a metal bonding layer and are self-sealed to form an ultrathin cavity; the upper piece is provided with two sample injection ports and an upper central window; the lower sheet is provided with a fluid inlet, a fluid outlet, a fluid flow channel, a lower central window, a micro-turbulence column array, a heating layer and an insulating layer; the heating layer is provided with four contact electrodes and a spiral annular heating wire; the center of the central window is the center, and the central area of the spiral annular heating wire is provided with a plurality of spiral annular heating wires; the fluid inlet and the fluid outlet are symmetrically arranged about a central window, and the lower central window is positioned at the center of the heating layer; have the perturbation flow post array on the window of center down, this chip has fast heating and cooling, and the resolution ratio is high, and the fluid flow direction is controllable, and temperature control is accurate, and the sample drift rate is low advantage.
Description
Technical Field
The utility model relates to a fluid chip field specifically relates to a transmission electron microscope high-resolution normal position fluid vortex heating chip.
Background
In situ Transmission Electron Microscopy (TEM) is a powerful and indispensable tool for characterizing materials, providing critical structural and chemical information for the material. In recent years, significant progress has been made in electron microscopy, making atomic scale imaging a routine process. Fluid TEMs have the unique advantage of allowing direct observation of the dynamics of material transformations in a fluid with high spatial and temporal resolution. For example, the growth trajectory of individual nanoparticles, the electrochemical deposition and lithiation of electrode materials, and the imaging of biological materials in liquid water, etc. can be followed. The fluid TEM can be used for in-situ observation of the behavior of the nano material in the fluid environment, and can also be used for integrating heating and freezing elements on a fluid TEM chip and a fluid rod for functional test of the nano material, thereby greatly widening the research range of the transmission electron microscope.
With the continuous development of nanotechnology, researchers try to combine nanomaterials with fluid transmission to research a new generation of efficient heat transfer technology, and research has shown that the thermal conductivity of the heat transfer fluid can be obviously improved by uniformly distributing nanoparticles in the heat transfer fluid. However, the difference between the fluid motion behavior and the macroscopic motion behavior at the nanometer scale is large, so that the in-situ research on the motion behavior of the nanofluid is quite lacked, and the heat conduction mechanism of the nanofluid is not clear. By utilizing the in-situ turbulent heating TEM technology, researchers can track the change information such as the dynamic change of the nano-fluid structure, the dynamic distribution of nano-particles and the like in real time to deepen the cognition of people on the nano-fluid, and the method has guiding significance on the engineering application of the nano-fluid.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a transmission electron microscope high resolution normal position fluid vortex heating chip that transmission electron microscope high resolution ratio fluid flow has fast rising and falling temperature, resolution ratio height, fluid flow direction is controllable, temperature control is accurate, the sample drift rate is low.
The specific scheme is as follows:
a chip for heating a high-resolution in-situ fluid by turbulent flow of a transmission electron microscope comprises an upper substrate and a lower substrate, wherein a first insulating layer is arranged on the front surface and the back surface of the upper substrate respectively, a second insulating layer is arranged on the front surface and the back surface of the lower substrate respectively, the front surface of the upper substrate is bonded and fixed on the front surface of the lower substrate through an annular metal bonding layer and is self-sealed to form an ultrathin chamber;
the upper substrate is provided with two sample injection ports and an upper central window, the upper central window is positioned at the center of the heating region, and the two sample injection ports are symmetrically arranged relative to the upper central window;
the lower substrate is provided with a fluid inlet, a fluid outlet, a fluid flow channel, a lower central window, a micro-turbulence column array, a heating layer and a third insulating layer; wherein the fluid inlet and the fluid outlet are linearly connected by a fluid flow channel; the width of the fluid flow channel at the lower central window is increased, and the whole heating area is included; the lower central viewing window is positioned between the fluid inlet and the fluid outlet; the micro turbulence column array is a column array which is arranged in a rectangular shape, is arranged along the longer side of the lower central window and is positioned in the lower central window, and the arrangement direction of the micro turbulence column array is consistent with the flow direction of the fluid; the spiral annular heating wires in the center of the heating layer are arranged on the second insulating layer on the front surface of the lower substrate and are approximately symmetrically distributed at the center of the lower central window, and gaps are reserved among the heating wires and are not connected with each other; the heating layer is also provided with four exposed contact electrodes which extend to the edge of the lower substrate; the third insulating layer covers the entire heating layer region except for the four contact electrodes;
the upper and lower central windows on the upper and lower substrates are aligned, and the long sides of the upper and lower central windows are in the same direction with the fluid flow channel.
Furthermore, the lower substrate is also provided with an isolation section and a support section, the isolation section is annularly arranged outside the heating area, and a carrier film of an insulating layer on the front surface of the lower substrate is used as a substrate; the annular isolation section is divided into a plurality of sections of isolation section units, a support section is arranged between every two adjacent isolation section units, and the substrate body in the area below the support section is respectively connected with the two adjacent isolation section units.
Furthermore, the isolation section is divided into four isolation section units which are arranged in a rectangular shape, and the support sections are distributed on four corners of the isolation section and have the same direction with the diagonal line.
Furthermore, the upper central window and the lower central window are both rectangular central windows.
Further, the fluid inlet and fluid outlet are sized between 200um x 200um and 800um x 800 um.
Furthermore, the width of the cross section of the fluid flow channel at the fluid inlet and the fluid outlet is 10um-200um, the width of the cross section at the heating area is 250um-550um, and the height is 50nm-1000 nm.
Further, the thickness of the metal bonding layer is 50nm-2000 nm; the metal bonding layer is made of In, Sn or Al.
Further, the insulating layer is made of silicon nitride or silicon oxide and is 5nm-200nm thick.
Furthermore, each micro-turbulence column in the micro-turbulence column array is a cylinder with the diameter of 1um-20 um.
Furthermore, the outer diameter of the spiral annular heating wire of the heating layer is 0.2mm-0.5mm, and the thickness of the spiral annular heating wire is 50nm-500nm, wherein the spiral annular heating wire adopts metal gold, platinum, palladium, rhodium, molybdenum, tungsten, platinum and rhodium; or an alloy of at least two of the foregoing metals or a non-metallic molybdenum carbide.
The utility model provides a transmission electron microscope high-resolution normal position fluid vortex heating chip compares with prior art and has following advantage: the micro-fluid channel and the micro-turbulence column of the transmission electron microscope high-resolution in-situ fluid turbulence heating chip provided by the invention can directly observe the fluid motion characteristics under the micro-scale by virtue of the unique micro-scale characteristics, study the fluid change behavior rule under the micro-scale, disclose the fluid motion mechanism and deepen the relevant study basis and application. And the micro-turbulence flow column in the micro-channel has larger surface area, better promotes fluid disturbance, amplifies fluid behaviors under the micro-scale, and can observe and control various fluid motion states under the micro-scale. Meanwhile, the temperature control is added on the basis of fluid turbulence, functions of accurate temperature control, rapid temperature rise and drop and the like are realized, the isolation section is designed, the temperature heat is effectively isolated from the heat conduction and conduction outlet heating area, and the central temperature control area is accurate and concentrated. Meanwhile, the invention can realize high-resolution observation of fluid turbulence, and the fluid flow direction is controllable, the form is controllable, and the sample drift rate is low.
Drawings
FIG. 1 is a cross-sectional view of a high resolution in-situ fluid-disturbed heating chip of a transmission electron microscope.
Fig. 2 shows a top view of the upper substrate.
Fig. 3 shows a top view of the lower substrate.
FIG. 4 shows an enlarged view of the heating zone and its surroundings.
Figure 5 shows an enlarged view of the lower central viewing window.
Detailed Description
To further illustrate the embodiments, the present invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. With these references, one of ordinary skill in the art will appreciate other possible embodiments and advantages of the present invention. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.
The present invention will now be further described with reference to the accompanying drawings and detailed description.
Example 1
The utility model provides a preparation method of a high-resolution in-situ fluid turbulent flow heating chip of a transmission electron microscope, which comprises the following steps,
manufacturing an upper substrate:
s101, preparing a Si (100) wafer A with silicon nitride or silicon oxide insulating layers on the front side and the back side, wherein the thickness of the silicon nitride or the silicon oxide is 20nm-200 nm;
s102, transferring the upper central window and the pattern of the sample injection port from the photoetching mask plate to the back surface of the wafer A by utilizing a photoetching process, and developing in positive photoresist developing solution to obtain a wafer A-1;
preferably, the photoetching process is exposure in a hard contact mode of an ultraviolet photoetching machine; the development time was 50 s;
more preferably, the exposure time is 15 s;
s103, etching an upper central window and a sample injection port on the insulating layer on the back of the wafer A-1 by using a reactive ion etching process, then placing the wafer A-1 with the back facing upwards into acetone for soaking, finally washing with a large amount of deionized water, and removing photoresist to obtain a wafer A-2;
s104, transferring the pinhole pattern of the upper central window to the front side of the wafer A-2 by using an ultraviolet laser direct writing process, developing in a positive photoresist developing solution, and washing and cleaning the surface by using deionized water to obtain a wafer A-3;
preferably, the development time is 50 s;
s105, etching the thickness of the insulating layer at the small hole on the front side of the wafer A-3 to 10-15 nm by using a reactive ion etching process, then sequentially putting the wafer A-3 with the front side facing upwards into acetone for soaking, finally washing with acetone, and removing the photoresist to obtain a wafer A-4;
preferably, the pore size of the small pores is 0.5um-5 um;
s106, placing the back face of the wafer A-4 upwards into a potassium hydroxide solution for wet etching until only a thin film window is left on the front face of the upper central window, taking out the wafer A-4, and washing with a large amount of deionized water to obtain a wafer A-5;
preferably, the mass percentage concentration of the potassium hydroxide solution is 20%; the etching temperature is 80 ℃, and the etching time is 1.5-4 h;
more preferably, the etching time is 2 hours;
s107, transferring the bonding layer pattern from the photoetching mask plate to the front side of the wafer A-5 by utilizing a photoetching process, developing in a positive photoresist developing solution, and washing and cleaning the surface by using deionized water to obtain a wafer A-6;
preferably, the photoetching process is exposure in a hard contact mode of an ultraviolet photoetching machine; the developing time is 50 s;
more preferably, the exposure time is 15 s;
s108, evaporating a metal bonding material on the wafer A-6 by using a thermal evaporation coating process to form a metal bonding layer to obtain a wafer A-7;
preferably, the metal is a low melting point metal; the thickness of the metal bonding layer is 50nm-2000 nm;
more preferably, the metal is In, Sn or Al;
s109, carrying out laser scribing on the wafer A-7, and dividing the wafer A-7 into independent chips, namely the upper substrate.
Manufacturing a lower substrate:
s201, preparing a Si (100) wafer B with silicon nitride or silicon oxide insulating layers on the front side and the back side, wherein the thickness of the silicon nitride or the silicon oxide is 5nm-200 nm;
s202, transferring the fluid outlet, fluid inlet and lower central window patterns from the mask plate to the back surface of the wafer B by utilizing a photoetching process, developing in a positive photoresist developing solution, and cleaning the surface by using deionized water to obtain a wafer B-1;
preferably, the photoetching process is exposure in a hard contact mode of an ultraviolet photoetching machine; the photoresist used in the photoetching process is AZ 5214E; the development time was 65 s;
more preferably, the exposure time is 20 s;
s203, etching the insulating layers corresponding to the lower central window, the fluid inlet and the fluid outlet on the silicon nitride layer on the back of the wafer B-1 by using a reactive ion etching process, then sequentially soaking the back of the wafer in acetone, finally washing the wafer by using the acetone, and removing the photoresist to obtain a wafer B-2;
s204, placing the wafer B-2 with the back face upward into a potassium hydroxide solution for wet etching until bare and leaked substrate silicon is completely corroded, taking out the wafer B-2, washing the wafer B-2 with a large amount of deionized water, and then blowing the wafer B-2 to obtain a wafer B-3;
preferably, the mass percentage concentration of the potassium hydroxide solution is 20%; the etching temperature is 70-90 ℃, and the etching time is 1.5-4 h;
more preferably, the etching temperature is 80 ℃; the etching time is 2 h;
s205, transferring the patterns of the isolation section and the isolation section supporting section from the photoetching mask plate to the back surface of the wafer B-3 by utilizing a photoetching process, developing in positive photoresist developer, and cleaning the surface by using deionized water to obtain a wafer B-4;
preferably, the photoetching process is exposure in a hard contact mode of an ultraviolet photoetching machine; the photoresist of the photoetching process is AZ 5214E; the development time was 65 s;
more preferably, the exposure time is 20 s;
s206, etching the insulating layers at the back isolation section and the isolation section supporting section of the wafer B-4 by using a reactive ion etching process, then placing the wafer with the back face upward into acetone for soaking, finally washing with acetone, and removing the photoresist to obtain a wafer B-5;
s207, placing the wafer B-5 with the back face upward into a potassium hydroxide solution for wet etching until bare and leaked substrate silicon is completely corroded, taking out the wafer, washing the wafer with a large amount of deionized water, and then blowing the wafer to dry to obtain a wafer B-6;
preferably, the potassium hydroxide solution is 20% by mass; the etching temperature is 70-90 ℃, and the etching time is 1-3 h;
more preferably, the etching temperature is 80 ℃, and the etching time is 2 hours;
s208, transferring the heating wire pattern from the photoetching mask plate to the front surface of the wafer B-6 by utilizing a photoetching process, developing in a positive photoresist developing solution, and washing and cleaning the surface by using deionized water to obtain a wafer B-7;
preferably, the photoetching process is exposure in a hard contact mode of an ultraviolet photoetching machine, and the photoresist used in the photoetching process is AZ 5214E; the development time was 50 s;
more preferably, the exposure time is 15 s;
s209, evaporating a layer of metal heating wire on the front side of the wafer B-7 by using an electron beam evaporation process, then putting the wafer B-7 with the front side facing upwards into acetone in sequence for soaking and stripping, finally washing with deionized water, removing photoresist, and leaving the metal heating wire to obtain a wafer B-8;
preferably, the metal of the metal heating wire is metal gold, platinum, palladium, rhodium, molybdenum, tungsten, platinum rhodium, or an alloy formed by combining at least two of the above metals, or nonmetal molybdenum carbide; the thickness of the metal heating wire is 50nm-500 nm;
s210, growing a layer of silicon nitride or silicon oxide or aluminum oxide on the metal heating wire of the wafer B-8 by using a PECVD (plasma enhanced chemical vapor deposition) process to serve as an insulating layer to obtain a wafer B-9;
preferably, the thickness of the insulating layer is 30nm-150 nm;
s211, transferring the fluid channel and the micro-turbulence column array pattern from the photoetching mask plate to the front surface of the wafer B-9 by utilizing a photoetching process, developing in a positive photoresist developing solution, and washing and cleaning the surface by using deionized water to obtain a wafer B-10;
preferably, the photoetching process is exposure in a hard contact mode of an ultraviolet photoetching machine, the photoresist used in the photoetching process is AZ5214E, and the developing time is 50 s;
more preferably, the exposure time is 15 s;
s212, evaporating a layer of non-noble metal material on the wafer B-10 by using electron beam evaporation, then sequentially putting the wafer with the front side facing upwards into acetone for soaking and stripping, finally washing with deionized water, removing photoresist, and leaving a fluid channel and a micro-turbulence column array to obtain a wafer B-11;
preferably, the thickness of the non-noble metal material is 50nm-500 nm; the non-noble metal material is Cr, Ti, Al, Zn or Cu; the width of the fluid flow channel is 10-200 um, and the height is 50nm-1 um;
s213, carrying out laser scribing on the wafer B-11, and dividing the wafer into independent chips, namely the lower substrate.
Assembling: assembling the prepared upper substrate and the lower substrate under a microscope to align the upper central window of the upper substrate with the lower central window of the lower substrate, and bonding and fixing the upper substrate and the lower substrate to obtain the high-resolution in-situ gas-phase heating chip for the transmission electron microscope.
Example 2
As shown in fig. 1-4, the present invention provides a high resolution in-situ fluid turbulence heating chip for a transmission electron microscope, which includes an upper substrate 1 and a lower substrate 2, wherein the two opposite surfaces of the upper substrate 1 and the lower substrate 2 are defined as a front surface and a back surface, respectively; wherein the upper substrate 1 has a first insulating layer 10 on both the front and back surfaces thereof, and the lower substrate 2 has a second insulating layer 20 on both the front and back surfaces thereof. In this embodiment, the upper substrate 1 and the lower substrate 2 are made of silicon substrates, and the first insulating layer and the second insulating layer are silicon nitride or silicon oxide insulating layers.
The front surface of the upper substrate 1 is bonded and fixed on the front surface of the lower substrate 2 through a ring-shaped metal bonding layer 30, an ultrathin chamber 40 is formed by self-sealing, and the thickness of the chamber 40 is taken as the height of the chamber by the film thickness of the metal bonding layer 30.
Wherein, the upper substrate 1 is provided with two sample injection ports 11 and an upper central window 12, the upper central window 12 is positioned at the center of the heating area, and the two sample injection ports 11 are symmetrically arranged relative to the upper central window 12. The two sample injection ports 11 are communicated with the cavity 40, the insulating layers of the upper substrate 1 and the back side are etched away in the area of the upper central window 12, and only the insulating layer of the front side is remained. Furthermore, the utility model discloses a plurality of blind holes that the opening is located the front side are gone out in sculpture on the insulating layer of last central window 12 to make the window film of last central window 12 can be thinner, and thinner central window film can realize higher resolution ratio, consequently the utility model discloses a reach higher resolution ratio and will adopt a plurality of apertures of further design in the square window that has, and use thinner window film in order to realize higher resolution ratio in the aperture. The shape of the small hole is not limited to a circle, a nearly circle, or the like.
The lower substrate 2 is provided with a fluid inlet 21, a fluid outlet 22, a fluid flow channel 23, a lower central window 24, a micro-turbulence column array 25, a heating layer 26, a third insulating layer 27, an insulating section 28 and a support section 29. Wherein the fluid inlet 21 and the fluid outlet 22 are linearly connected by a fluid flow channel 23; the width of the fluid flow channel 23 at the lower central window 24 is increased and encompasses the entire heating region; the lower central viewing window 24 is located intermediate the fluid inlet 21 and the fluid outlet 22.
The micro-turbulence column array 25 is a column array arranged in a rectangular shape, and is arranged along the longer side of the lower central window 24 and positioned in the lower central window 24, and the arrangement direction of the micro-turbulence column array 25 is consistent with the fluid flowing direction. The spiral annular heating wire 261 at the center of the heating layer 26 is arranged on the second insulating layer 20 on the front surface of the lower substrate 2 and is approximately symmetrically distributed at the center of the lower central window 24, and gaps are reserved among the heating wires 261 and are not connected with each other; the heating layer 26 is further provided with four contact electrodes 262 which extend to the edge of the lower substrate 2 and are exposed, and the four contact electrodes 262 form two pairs, wherein one pair is used as a heating electrode, and the other pair is used as a monitoring electrode, so that the heating layer is arranged into two groups of equivalent circuits which are respectively controlled by using a separate current source meter and a separate voltage source meter; one loop of the two equivalent circuits is responsible for power supply and heat production, the other loop is responsible for monitoring the resistance value of the heating wire after heating in real time, and the resistance of the test circuit is adjusted in real time through the feedback circuit according to the correlation between the resistance (R) and the temperature (T) in the design program so as to reach the set temperature. Above the heater layer, a third insulating layer 27 is arranged, which third insulating layer 27 covers the entire heater layer area except for the four contact electrodes 262.
The isolation section 28 is arranged outside the heating area in a surrounding manner, the carrier film of the insulating layer 20 on the front surface of the lower substrate 2 is used as a substrate, namely, the silicon substrate below the isolation section 28 area and the insulating layer on the back surface are etched, only the insulating layer 20 on the front surface is reserved, and the silicon substrate in the heating area and the silicon substrate of the whole chip are isolated by the silicon nitride or silicon oxide acting support film to block the heat transfer effect, so that the heat loss of the heating area is reduced, the silicon substrate is prevented from being expanded by heating, and the sample drift phenomenon in the electron microscope test is improved. In order to increase the strength of the isolation section 28, the annular isolation section 28 is divided into multiple isolation section units, a support section 29 is provided between two adjacent isolation section units, the silicon substrate in the area below the support section 29 is not etched away, so that a section of silicon substrate connection is provided between two adjacent isolation section units, the mechanical strength of the support film of the isolation section 28 is ensured, and the occurrence of support film breakage is avoided. In this embodiment, the isolation section 28 is divided into four isolation section units arranged in a rectangular shape, and the support sections 29 are distributed on four corners of the isolation section.
In addition, the upper and lower central windows in this embodiment are both rectangular, and the long sides of both windows are in the same direction as the fluid flow channel. When the upper substrate and the lower substrate are bonded together, it is required that the upper central window 12 of the upper substrate 1 and the lower central window 24 of the lower substrate 2 are aligned, and misalignment may cause the viewing windows to be too small to find, and misalignment may cause the electron beams to be unable to penetrate.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The utility model provides a transmission electron microscope high resolution normal position fluid vortex heating chip, includes upper substrate and lower substrate, all have a first insulating layer on the front of upper substrate and the back, all have a second insulating layer on the front of lower substrate and the back, the positive bonding of passing through an annular metal bonding layer of upper substrate is fixed on the front of lower substrate to from closed formation an ultra-thin cavity, its characterized in that:
the upper substrate is provided with two sample injection ports and an upper central window, the upper central window is positioned at the center of the heating region, and the two sample injection ports are symmetrically arranged relative to the upper central window;
the lower substrate is provided with a fluid inlet, a fluid outlet, a fluid flow channel, a lower central window, a micro-turbulence column array, a heating layer and a third insulating layer; wherein the fluid inlet and the fluid outlet are linearly connected by a fluid flow channel; the width of the fluid flow channel at the lower central window is increased, and the whole heating area is included; the lower central viewing window is positioned between the fluid inlet and the fluid outlet; the micro turbulence column array is a column array which is arranged in a rectangular shape, is arranged along the longer side of the lower central window and is positioned in the lower central window, and the arrangement direction of the micro turbulence column array is consistent with the flow direction of the fluid; the spiral annular heating wires in the center of the heating layer are arranged on the second insulating layer on the front surface of the lower substrate and are approximately symmetrically distributed at the center of the lower central window, and gaps are reserved among the heating wires and are not connected with each other; the heating layer is also provided with four exposed contact electrodes which extend to the edge of the lower substrate; the third insulating layer covers the entire heating layer region except for the four contact electrodes;
the upper and lower central windows on the upper and lower substrates are aligned, and the long sides of the upper and lower central windows are in the same direction with the fluid flow channel.
2. The chip for heating by turbulent flow of in-situ fluid with high resolution for transmission electron microscope as claimed in claim 1, wherein: the lower substrate is also provided with an isolation section and a support section, the isolation section is annularly arranged outside the heating area, and a carrier film of an insulating layer on the front surface of the lower substrate is taken as a substrate; the annular isolation section is divided into a plurality of sections of isolation section units, a support section is arranged between every two adjacent isolation section units, and the substrate body in the area below the support section is respectively connected with the two adjacent isolation section units.
3. The chip for heating by turbulent flow of in-situ fluid with high resolution for transmission electron microscope as claimed in claim 2, wherein: the isolation section is divided into four isolation section units which are arranged in a rectangular shape, and the support sections are distributed on four corners of the isolation section and have the same direction with the diagonal line.
4. The chip for heating by turbulent flow of in-situ fluid with high resolution for transmission electron microscope as claimed in claim 1, wherein: the upper central window and the lower central window are both rectangular central windows.
5. The chip for heating by turbulent flow of in-situ fluid with high resolution for transmission electron microscope as claimed in claim 1, wherein: the fluid inlet and fluid outlet are 200um x 200um-800um x 800um in size.
6. The chip for heating by turbulent flow of in-situ fluid with high resolution for transmission electron microscope as claimed in claim 1, wherein: the width of the cross section of the fluid flow channel at the fluid inlet and the fluid outlet is 10um-200um, the width of the cross section at the heating area is 250um-550um, and the height is 50nm-1000 nm.
7. The chip for heating by turbulent flow of in-situ fluid with high resolution for transmission electron microscope as claimed in claim 1, wherein: the thickness of the metal bonding layer is 50nm-2000 nm; the metal bonding layer is made of In, Sn or Al.
8. The chip for heating by turbulent flow of in-situ fluid with high resolution for transmission electron microscope as claimed in claim 1, wherein: the insulating layer is made of silicon nitride or silicon oxide and has a thickness of 5nm-200 nm.
9. The chip for heating by turbulent flow of in-situ fluid with high resolution for transmission electron microscope as claimed in claim 1, wherein: each micro-turbulence column in the micro-turbulence column array is a cylinder with the diameter of 1um-20 um.
10. The chip for heating by turbulent flow of in-situ fluid with high resolution for transmission electron microscope as claimed in claim 1, wherein: the outer diameter of a spiral annular heating wire of the heating layer is 0.2mm-0.5mm, the thickness is 50nm-500nm, and the spiral annular heating wire adopts metal gold, platinum, palladium, rhodium, molybdenum and tungsten; or an alloy of at least two of the foregoing metals or a non-metallic molybdenum carbide.
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| CN202021813450.XU CN212932449U (en) | 2020-08-26 | 2020-08-26 | High-resolution in-situ fluid turbulence heating chip for transmission electron microscope |
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| CN202021813450.XU CN212932449U (en) | 2020-08-26 | 2020-08-26 | High-resolution in-situ fluid turbulence heating chip for transmission electron microscope |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022041597A1 (en) * | 2020-08-26 | 2022-03-03 | 厦门大学 | High-resolution in-situ fluid turbulence heating chip of transmission electron microscope |
| CN114235195A (en) * | 2021-11-18 | 2022-03-25 | 厦门大学 | Ultrahigh-space-time resolution fluid temperature sensing chip and manufacturing method thereof |
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2020
- 2020-08-26 CN CN202021813450.XU patent/CN212932449U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022041597A1 (en) * | 2020-08-26 | 2022-03-03 | 厦门大学 | High-resolution in-situ fluid turbulence heating chip of transmission electron microscope |
| CN114235195A (en) * | 2021-11-18 | 2022-03-25 | 厦门大学 | Ultrahigh-space-time resolution fluid temperature sensing chip and manufacturing method thereof |
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