CN212874516U - Monocrystalline silicon piece with strong corrosion resistance - Google Patents
Monocrystalline silicon piece with strong corrosion resistance Download PDFInfo
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- CN212874516U CN212874516U CN202021549932.9U CN202021549932U CN212874516U CN 212874516 U CN212874516 U CN 212874516U CN 202021549932 U CN202021549932 U CN 202021549932U CN 212874516 U CN212874516 U CN 212874516U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model discloses a monocrystalline silicon piece that anti-corrosion capability is strong, including crystal, first silicon chip body, positive electrode, second silicon chip body and epoxy bottom anticorrosive piece, epoxy bottom anticorrosive piece is installed to the inside bottom of crystal, and the central point on epoxy bottom anticorrosive piece top puts the department and is equipped with second silicon chip body to the inside chamber that leads to that is equipped with of crystal of second silicon chip body top, the central point that leads to intracavity portion puts the department and is equipped with the open structure, and switches on the inside first silicon chip body that is equipped with of crystal that the chamber kept away from second silicon chip body one side, and the top of first silicon chip body is equipped with absorbent structure, all install epoxy flank anticorrosive piece on two inside walls of crystal, and all be equipped with the negative electrode on two lateral walls of crystal bottom. The utility model discloses not only improved the absorption efficiency of light energy when monocrystalline silicon piece uses, ensured the electric conductive property when monocrystalline silicon piece uses, prolonged monocrystalline silicon piece's life moreover.
Description
Technical Field
The utility model relates to a monocrystalline silicon piece technical field specifically is a monocrystalline silicon piece that corrosion protection ability is strong.
Background
A single crystal silicon wafer, a single crystal of silicon, is a crystal having a substantially complete lattice structure, has different properties in different directions, is a good semiconductor material, is used for manufacturing semiconductor devices, solar cells, and the like, is drawn from high-purity polycrystalline silicon in a single crystal furnace, and solar panels are mainly manufactured from such single crystal silicon wafers along with the rapid growth of the solar cell market.
The types of monocrystalline silicon wafers on the market are various, the use requirements of people can be basically met, certain defects still exist, and the following problems exist.
(1) The existing monocrystalline silicon piece is inconvenient for refraction treatment of light energy, so that the absorption efficiency of the existing monocrystalline silicon piece to the light energy is low, and people are often troubled;
(2) the existing monocrystalline silicon wafer is inconvenient for carrying out high-efficiency communication treatment on the first silicon wafer body and the second silicon wafer body, so that the conductivity of the monocrystalline silicon wafer is general and needs to be improved;
(3) the existing monocrystalline silicon wafer has common corrosion resistance, so that the first silicon wafer body and the second silicon wafer body are easy to damage, and the service life is short.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a monocrystalline silicon piece that corrosion protection ability is strong to it can carry out refraction processing, is not convenient for carry out high-efficient intercommunication processing and the general problem of corrosion resisting property to first silicon chip body and second silicon chip body not to carry out to the light to provide monocrystalline silicon piece in solving above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: a monocrystalline silicon wafer with strong corrosion resistance comprises a crystal, a first silicon wafer body, a positive electrode, a second silicon wafer body and an epoxy resin bottom corrosion-resistant sheet, wherein the epoxy resin bottom corrosion-resistant sheet is installed at the bottom end inside the crystal, the second silicon wafer body is arranged at the central position of the top end of the epoxy resin bottom corrosion-resistant sheet, a conducting cavity is formed inside the crystal above the second silicon wafer body, a communicating structure is arranged at the central position inside the conducting cavity, the first silicon wafer body is arranged inside the crystal at one side of the conducting cavity, which is far away from the second silicon wafer body, an absorption structure is arranged at the top end of the first silicon wafer body, epoxy resin flank corrosion-resistant sheets are installed on two inner side walls of the crystal, negative electrodes are arranged on two outer side walls at the bottom of the crystal, one end of each negative electrode sequentially penetrates through the crystal and the epoxy resin flank corrosion-resistant sheet and is connected with, and the outer wall of the crystal above the negative electrode is provided with a positive electrode, and one end of the positive electrode sequentially penetrates through the crystal and the epoxy resin flank anti-corrosion sheet and is connected with the outer wall of the first silicon wafer body.
Preferably, all be equipped with the forked tail arrangement groove on the outer wall of epoxy flank anticorrosive coating one side of keeping away from the chamber of leading to, and the inside central point department of putting of forked tail arrangement groove is equipped with protruding type fastener, the one end of protruding type fastener extend to the outside of forked tail arrangement groove and with the inner wall fixed connection of crystal to install epoxy flank anticorrosive coating on the inner wall of crystal and carry out anticorrosive treatment.
Preferably, absorbing structure's inside is equipped with black body light absorption sheet body, double-deck silicon nitride antireflection coating and sculpture matte in proper order, black body light absorption sheet body is installed on the top of first silicon chip body, and is equipped with double-deck silicon nitride antireflection coating on the outer wall that first silicon chip body one side was kept away from to black body light absorption sheet body to carry out refraction to light energy and handle, still reduce the phenomenon that light energy produced the reflection simultaneously.
Preferably, the top end of the double-layer silicon nitride antireflection layer is provided with an etching suede face at equal intervals, and one end of the etching suede face, which is far away from the double-layer silicon nitride antireflection layer, extends to the outside of the crystal, so that the absorption efficiency of light energy is improved.
Preferably, the inside of the communicating structure is sequentially provided with a lower communicating block body, a conducting substrate, an upper communicating block body and a connecting rod, the central position of the inside of the conducting cavity is provided with the conducting substrate, two groups of connecting rods are mounted at two ends of the conducting substrate, one end of the connecting rod far away from the conducting substrate is connected with one ends of the first silicon wafer body and the second silicon wafer body respectively, and therefore the conducting substrate is arranged inside the conducting cavity.
Preferably, the top that switches on the substrate is installed equidistant last intercommunication block, goes up the intercommunication block and keeps away from the one end that switches on the substrate and is connected with the bottom of first silicon chip body, and switches on the bottom of substrate and install equidistant lower intercommunication block, and the one end that switches on the substrate is kept away from to lower intercommunication block is connected with the top of second silicon chip body to carry out high-efficient intercommunication processing to first silicon chip body and second silicon chip body.
Compared with the prior art, the beneficial effects of the utility model are that: the monocrystalline silicon piece with strong corrosion resistance not only improves the absorption efficiency of the monocrystalline silicon piece to light energy when in use, ensures the conductivity of the monocrystalline silicon piece when in use, but also prolongs the service life of the monocrystalline silicon piece;
(1) the black body light absorption sheet body is arranged at the top of the first silicon wafer body, so that the black body light absorption sheet body can absorb light energy, and the double-layer silicon nitride antireflection layer is arranged at the top of the black body light absorption sheet body, so that the double-layer silicon nitride antireflection layer can refract the light energy;
(2) the lower communicating block, the communicating substrate, the upper communicating block and the connecting rod are arranged, the communicating substrate is arranged at the central position inside the communicating cavity through the connecting rod, and the upper communicating block and the lower communicating block which are equidistant are arranged at the two ends of the communicating substrate respectively and have good electric conductivity, so that the first silicon wafer body and the second silicon wafer body can be efficiently communicated, and the electric conductivity of the single crystal silicon wafer in use is ensured;
(3) through being provided with epoxy flank anticorrosive coating, epoxy bottom anticorrosive coating, forked tail arrangement groove and protruding type fastener, the protruding type fastener through forked tail arrangement inslot portion sets up epoxy flank anticorrosive coating fixed on two inside walls of crystal, and the inside bottom of crystal is provided with epoxy bottom anticorrosive coating, all have good corrosion resisting property because of epoxy flank anticorrosive coating and epoxy bottom anticorrosive coating, make monocrystalline silicon piece's anticorrosive property obtain promoting, reduce damage phenomena such as first silicon body and second silicon body production corruption, thereby monocrystalline silicon piece's life has been prolonged.
Drawings
Fig. 1 is a schematic front view of a cross-sectional structure of the present invention;
fig. 2 is an enlarged schematic structural view of a point a in fig. 1 according to the present invention;
FIG. 3 is a schematic view of the absorption structure of the present invention in cross section and enlarged structure;
fig. 4 is a schematic view of the communication structure of the present invention.
In the figure: 1. a crystal; 2. epoxy resin flank anticorrosive sheets; 3. an absorbent structure; 301. a black body light absorbing sheet body; 302. a double-layer silicon nitride antireflection layer; 303. etching the suede; 4. a first silicon wafer body; 5. a positive electrode; 6. a negative electrode; 7. a communicating structure; 701. a lower communicating block; 702. conducting the substrate; 703. an upper communicating block; 704. a connecting rod; 8. a second silicon wafer body; 9. a communicating cavity; 10. an epoxy resin bottom anticorrosive sheet; 11. dovetail mounting grooves; 12. a male fastener.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-4, the present invention provides an embodiment: a monocrystalline silicon wafer with strong corrosion resistance comprises a crystal 1, a first silicon wafer body 4, a positive electrode 5, a second silicon wafer body 8 and an epoxy resin bottom corrosion-resistant sheet 10, wherein the epoxy resin bottom corrosion-resistant sheet 10 is installed at the bottom end inside the crystal 1, the second silicon wafer body 8 is arranged at the central position of the top end of the epoxy resin bottom corrosion-resistant sheet 10, a conducting cavity 9 is arranged inside the crystal 1 above the second silicon wafer body 8, a communicating structure 7 is arranged at the central position inside the conducting cavity 9, a lower communicating block 701, a conducting substrate 702, an upper communicating block 703 and a connecting rod 704 are sequentially arranged inside the communicating structure 7, a conducting substrate 702 is arranged at the central position inside the conducting cavity 9, two groups of connecting rods 704 are installed at two ends of the conducting substrate 702, one end, far away from the conducting substrate 702, of the connecting rod 704 is respectively connected with one end of the first silicon wafer body 4 and one end of the second silicon, the top end of the conducting substrate 702 is provided with upper communicating block bodies 703 with equal intervals, one end of each upper communicating block body 703, which is far away from the conducting substrate 702, is connected with the bottom end of the first silicon wafer body 4, the bottom end of the conducting substrate 702 is provided with lower communicating block bodies 701 with equal intervals, and one end of each lower communicating block body 701, which is far away from the conducting substrate 702, is connected with the top end of the second silicon wafer body 8;
the conducting substrate 702 is arranged at the central position inside the conducting cavity 9 through the connecting rod 704, and because the two ends of the conducting substrate 702 are respectively provided with the upper communicating block 703 and the lower communicating block 701 which are equidistant and have good conductivity, the first silicon wafer body 4 and the second silicon wafer body 8 can be efficiently communicated, and the conductivity of the single crystal silicon wafer during use is ensured;
a first silicon wafer body 4 is arranged inside the crystal 1 on the side, away from the second silicon wafer body 8, of the conduction cavity 9, an absorption structure 3 is arranged at the top end of the first silicon wafer body 4, a black body light absorption sheet body 301, a double-layer silicon nitride antireflection layer 302 and an etching suede 303 are sequentially arranged inside the absorption structure 3, the black body light absorption sheet body 301 is arranged at the top end of the first silicon wafer body 4, the double-layer silicon nitride antireflection layer 302 is arranged on the outer wall of the black body light absorption sheet body 301 on the side, away from the first silicon wafer body 4, of the black body light absorption sheet body 302, the etching suede 303 is arranged at equal intervals at the top end of the double-layer silicon nitride antireflection layer 302, and one end;
the black body light absorption sheet body 301 is arranged on the top of the first silicon wafer body 4, so that light energy is absorbed by the black body light absorption sheet body, the double-layer silicon nitride antireflection layer 302 is arranged on the top of the black body light absorption sheet body 301, so that the light energy is refracted, and as the top end of the double-layer silicon nitride antireflection layer 302 is provided with the etching suede 303 at equal intervals, and the outer wall of the etching suede 303 is of a concave structure, the refraction efficiency of the light energy is further enhanced, and the absorption efficiency of the single crystal silicon wafer on the light energy when in use is improved;
the two inner side walls of the crystal 1 are provided with epoxy resin flank corrosion-resistant sheets 2, the outer walls of the epoxy resin flank corrosion-resistant sheets 2 far away from one side of the conducting cavity 9 are provided with dovetail mounting grooves 11, the central positions inside the dovetail mounting grooves 11 are provided with convex fasteners 12, one ends of the convex fasteners 12 extend to the outer parts of the dovetail mounting grooves 11 and are fixedly connected with the inner wall of the crystal 1, so that the epoxy resin flank corrosion-resistant sheets 2 are mounted on the inner wall of the crystal 1 for corrosion prevention treatment;
and the two outer side walls at the bottom of the crystal 1 are provided with negative electrodes 6, one ends of the negative electrodes 6 sequentially penetrate through the crystal 1 and the epoxy resin flank anticorrosive sheets 2 and are connected with the outer wall of the second silicon wafer body 8, the outer wall of the crystal 1 above the negative electrodes 6 is provided with positive electrodes 5, and one ends of the positive electrodes 5 sequentially penetrate through the crystal 1 and the epoxy resin flank anticorrosive sheets 2 and are connected with the outer wall of the first silicon wafer body 4.
The working principle is as follows: when the monocrystalline silicon wafer is used, firstly, a plurality of groups of monocrystalline silicon wafers are connected together for use through the positive electrode 5 and the negative electrode 6, then the black body light absorption sheet body 301 is arranged on the top of the first silicon wafer body 4 to absorb light energy, meanwhile, the double-layer silicon nitride antireflection layer 302 is arranged on the top of the black body light absorption sheet body 301 to refract the light energy, because the top end of the double-layer silicon nitride antireflection layer 302 is provided with the etching suede surface 303 with equal intervals, and the outer wall of the etching suede surface 303 is of a concave structure, the refraction efficiency of the light energy is further enhanced, the absorption efficiency of the light energy when the monocrystalline silicon wafer is used is improved, then the conducting substrate 702 is arranged at the central position inside the conducting cavity 9 through the connecting rod 704, because the two ends of the conducting substrate 702 are respectively provided with the upper communicating block 703 and the lower communicating block 701 with equal intervals, and both have good, so as to carry out high-efficient intercommunication to first silicon chip body 4 and second silicon chip body 8 and handle, electric conductive property when guaranteeing monocrystalline silicon piece to use, last through the protruding type fastener 12 of forked tail arrangement groove 11 inside with fixed the setting in two inside walls of crystal 1 of epoxy flank anticorrosive coating 2, and the inside bottom of crystal 1 is provided with epoxy bottom anticorrosive coating 10, all have good corrosion resistance because of epoxy flank anticorrosive coating 2 and epoxy bottom anticorrosive coating 10, make monocrystalline silicon piece's anticorrosive coating obtain promoting, reduce damage phenomena such as first silicon chip body 4 and second silicon chip body 8 production corruption, prolong monocrystalline silicon piece's life, thereby accomplish monocrystalline silicon piece's use.
It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (6)
1. A monocrystalline silicon piece with strong corrosion resistance comprises a crystal (1), a first silicon piece body (4), a positive electrode (5), a second silicon piece body (8) and an epoxy resin bottom anti-corrosion piece (10), and is characterized in that: an epoxy resin bottom anti-corrosion piece (10) is installed at the bottom end inside the crystal (1), a second silicon wafer body (8) is arranged at the central position of the top end of the epoxy resin bottom anti-corrosion piece (10), a conducting cavity (9) is arranged inside the crystal (1) above the second silicon wafer body (8), a communicating structure (7) is arranged at the central position inside the conducting cavity (9), a first silicon wafer body (4) is arranged inside the crystal (1) at one side of the conducting cavity (9) far away from the second silicon wafer body (8), an absorption structure (3) is arranged at the top end of the first silicon wafer body (4), epoxy resin side wing anti-corrosion pieces (2) are installed on two inner side walls of the crystal (1), negative electrodes (6) are arranged on two outer side walls at the bottom of the crystal (1), one end of each negative electrode (6) sequentially penetrates through the crystal (1) and the epoxy resin side wing anti-corrosion pieces (2) and is connected with the outer wall of the second silicon wafer body (8), and the outer wall of the crystal (1) above the negative electrode (6) is provided with a positive electrode (5), and one end of the positive electrode (5) sequentially penetrates through the crystal (1) and the epoxy resin flank anti-corrosion sheet (2) and is connected with the outer wall of the first silicon wafer body (4).
2. The silicon single crystal wafer having high corrosion resistance according to claim 1, wherein: epoxy flank anticorrosive coating (2) all are equipped with forked tail mounting groove (11) on keeping away from the outer wall of leading to chamber (9) one side, and the inside central point department of putting in forked tail mounting groove (11) is equipped with protruding type fastener (12), the one end of protruding type fastener (12) extend to the outside of forked tail mounting groove (11) and with the inner wall fixed connection of crystal (1).
3. The silicon single crystal wafer having high corrosion resistance according to claim 1, wherein: the utility model discloses an absorbing structure, including absorbing structure (3), black body light absorption piece body (301), double-deck silicon nitride antireflection coating (302) and sculpture matte (303) are equipped with in proper order to the inside of absorbing structure (3), black body light absorption piece body (301) are installed on the top of first silicon chip body (4), and are equipped with double-deck silicon nitride antireflection coating (302) on the outer wall of first silicon chip body (4) one side is kept away from to black body light absorption piece body (301).
4. The silicon single crystal wafer having high corrosion resistance according to claim 3, wherein: the top end of the double-layer silicon nitride antireflection layer (302) is provided with an etching suede (303) with equal intervals, and one end of the etching suede (303), which is far away from the double-layer silicon nitride antireflection layer (302), extends to the outside of the crystal (1).
5. The silicon single crystal wafer having high corrosion resistance according to claim 1, wherein: the utility model discloses a silicon chip, including intercommunication structure (7), intercommunication block (701), conduction substrate (702), last intercommunication block (703) and connecting rod (704) are equipped with down in proper order to the inside of intercommunication structure (7), the central point department of putting of the inside of conduction chamber (9) is equipped with and switches on substrate (702), and switches on the both ends of substrate (702) and all install two sets of connecting rods (704), and the one end of keeping away from and switching on substrate (702) of connecting rod (704) is connected with the one end of first silicon chip body (4) and second silicon chip body (8) respectively.
6. The silicon single crystal wafer having high corrosion resistance according to claim 5, wherein: the silicon wafer connecting structure is characterized in that the top end of the conducting substrate (702) is provided with upper communicating block bodies (703) at equal intervals, one end, far away from the conducting substrate (702), of each upper communicating block body (703) is connected with the bottom end of the first silicon wafer body (4), the bottom end of the conducting substrate (702) is provided with lower communicating block bodies (701) at equal intervals, and one end, far away from the conducting substrate (702), of each lower communicating block body (701) is connected with the top end of the second silicon wafer body (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021549932.9U CN212874516U (en) | 2020-07-30 | 2020-07-30 | Monocrystalline silicon piece with strong corrosion resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021549932.9U CN212874516U (en) | 2020-07-30 | 2020-07-30 | Monocrystalline silicon piece with strong corrosion resistance |
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| Publication Number | Publication Date |
|---|---|
| CN212874516U true CN212874516U (en) | 2021-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021549932.9U Active CN212874516U (en) | 2020-07-30 | 2020-07-30 | Monocrystalline silicon piece with strong corrosion resistance |
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|---|---|
| CN (1) | CN212874516U (en) |
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- 2020-07-30 CN CN202021549932.9U patent/CN212874516U/en active Active
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