CN212811692U

CN212811692U - High-performance wireless transceiver supporting Wi-SUN protocol

Info

Publication number: CN212811692U
Application number: CN202021682872.8U
Authority: CN
Inventors: 游雪城; 孙香涛; 刘建; 廖先仪; 成锋; 方强
Original assignee: Lierda Science & Technology Group Co ltd
Current assignee: Lierda Science & Technology Group Co ltd
Priority date: 2020-08-13
Filing date: 2020-08-13
Publication date: 2021-03-26
Anticipated expiration: 2030-08-13

Abstract

The utility model discloses a high-performance wireless transceiver supporting Wi-SUN protocol, which overcomes the prior art and comprises a power module, a radio frequency chip, a clock module, a transmitting module, a receiving module and a high-frequency switch control module; the power supply module comprises two paths of outputs, wherein one path of output is a 3.3V power supply circuit, and the other path of output is a 2.85V power supply circuit. The scheme of the utility model is based on the standard of IEEE802.15.4, the working frequency band is 902 MHz-928 MHz, and the Wi-SUN protocol is supported, so that several pain points in the Internet of things industry can be solved, the standard protocol is open and not bound; large-scale networking application can be realized; the remote transformation that conveniently carries out various thing networking devices of low-power consumption reduces the transformation cost.

Description

High-performance wireless transceiver supporting Wi-SUN protocol

Technical Field

The utility model belongs to the technical field of the internet of things technique and specifically relates to a high performance wireless transceiver of support Wi-SUN agreement of long-range large-scale network deployment of low-power consumption on probation with low costs, data security is related to a user.

Background

The Internet of things is a big trend of the current information age, emphasizes the networking of everything, brings great convenience to future life due to the popularization of the Internet of things, and as the Internet of things rises, the demand of remote communication is increasing day by day, and the communication technology of the low-power-consumption wide area network is just like various flowers, including Wi-SUN, LoRaWAN, NB-IOT, ZigBee and the like. These schemes are roughly divided into two categories, one being the cellular network of the operator and one being the ad hoc network. The cellular network of the operator, such as NB-IOT, has the advantages of convenient network deployment, low technical threshold, large network size, etc. The ad hoc network such as the mature LoRaWAN and ZigBee can control the network by itself, and the communication bandwidth is higher, and the protocol can be customized by itself. Since the core technology of LoRaWAN is in the hands of SEMTECH, a company of LoRaWAN, and users of loran are bound to LoRa technology in this form, development and updating of the technology and changes in policy affect users of LoRaWAN. Although ZigBee is a standard mature networking technology, the network range of ZigBee is far from the requirement of the current Internet of things. At present, the charging mode of NB-IOT and the like is not clear, so that the use cost of a user is higher. Another limitation is that the user data is run on the public network, which is a challenge for data security.

For example, a "fusion gateway network system based on NB-IoT and ZigBee" disclosed in chinese patent literature, whose publication number CN208849799U includes a ZigBee coordinator, a BC95 module, and a cloud platform on the internet; the fusion gateway is used for communicating the ZigBee network with the NB-IoT network; the NB-IoT network is communicated with the Internet, and the ZigBee network is communicated with the Internet through the NB-IoT network; the ZigBee network comprises a router node and a terminal node; the ZigBee regulator is a center of the ZigBee network and is connected with the BC95 module through a serial port, the ZigBee regulator is used for collecting data information of the router nodes and the terminal nodes and sending the data information to the BC95 module through the serial port between the ZigBee regulator and the BC95 module, and the BC95 module transmits the data information to a cloud platform on the Internet through the NB-IoT network. Although ZigBee is a standard mature networking technology, the network range of ZigBee is far from the requirement of the internet of things. At present, the charging mode of NB-IOT and the like is not clear, in the scheme, the use cost of the user is high due to the fusion gateway based on NB-IOT and ZigBee, and the limitation is that the user data all need to run on the public network, which is not favorable for ensuring the security of the user data.

Disclosure of Invention

The utility model relates to an overcome prior art's the problem of the unable extensive network deployment of realization, provide a high performance wireless transceiver who supports Wi-SUN agreement, the utility model discloses standard, do not bind and to realize extensive network deployment, the working frequency channel is 902MHz ~928MHz, supports Wi-SUN agreement, very is suitable for and low-power consumption, remote, large-scale network deployment.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a high-performance wireless transceiver supporting a Wi-SUN protocol comprises a power module, a radio frequency chip, a clock module, a transmitting module, a receiving module and a high-frequency switch control module; the power supply module comprises two paths of outputs, wherein one path of output is a 3.3V power supply circuit, and the other path of output is a 2.85V power supply circuit.

The utility model discloses the scheme is based on IEEE802.15.4's specification, and the working frequency channel is 902MHz ~928MHz, supports Wi-SUN agreement, very suitable and low-power consumption, remote, large-scale network deployment, through the device selection, the circuit is optimized, mode optimization such as impedance match the utility model discloses the radio frequency performance of scheme for it can satisfy the working frequency channel and be 902MHz ~928MHz and can export 30dBm at the maximum, and the electric current is about 750mA, and receive the return circuit and take LNA to enlarge, can let like this the utility model discloses farther distance transmission of scheme becomes probably.

Preferably, the 3.3V power circuit includes a capacitor C5, a capacitor C6, a resistor R13, a buck chip U1, a capacitor C1 and an inductor B1, wherein the input power 5V _ IN is respectively connected to one end of the capacitor C5, one end of the capacitor C6, one end of the resistor R13 and the input end of the buck chip U1, the other end of the resistor R13 is connected to the enable end of the buck chip U1, the output end of the buck chip U1 is respectively connected to one end of the capacitor C1 and one end of the inductor B1, and the other end of the inductor B1 is connected to the output end VDD _ MCU of the 3.3V power circuit.

Preferably, the 2.85V power circuit includes a capacitor C8, a buck chip U2, a resistor R11, a resistor R1, a resistor R2 and a capacitor C18, an input end PA _5V of the 2.85V power circuit is respectively connected to one end of the capacitor C8 and an input end of the buck chip U2, an enable end of the buck chip U2 is grounded through a resistor R11, an output end of the buck chip U2 is respectively connected to one end of a resistor R1, one end of a capacitor C18 and an output end PA _ VREF of the 2.85V power circuit, the other end of the resistor R1 is respectively connected to the BP/FB end of the buck chip U2, and the other end of the resistor R2, the other end of the capacitor C18 and the other end of the capacitor C.

Preferably, the clock module comprises an MCU clock circuit and an RF clock circuit.

Preferably, the MCU clock circuit comprises a capacitor C35, a crystal oscillator X1 and a capacitor C36, one end of the crystal oscillator X1 is grounded through a capacitor C35, and the other end of the crystal oscillator X1 is grounded through a capacitor C36.

Preferably, the RF clock circuit includes a crystal oscillator X2, a capacitor C54, a resistor R31 and a capacitor C55, wherein a first pin of the crystal oscillator X2 is connected to one end of the capacitor C55, the other end of the capacitor C55 is connected to a second pin of the crystal oscillator X2, one end of the resistor R31, one end of the capacitor C54 and a fourth pin of the crystal oscillator X2, the other end of the resistor R31 is grounded, and the other end of the capacitor C54 is connected to a third pin of the crystal oscillator X2.

Preferably, the transmitting module includes a resistor R9, a resistor R10, a capacitor C52, a capacitor C7, an inductor L2, a capacitor C11, a capacitor C13, a capacitor C16, an inductor L16, a capacitor C16, an inductor L16, a radio frequency power amplifier U16, a capacitor C16, a resistor R16, an inductor B16, a resistor R16, a capacitor C16, an inductor L16, a capacitor C16, a low pass filter U16, an inductor L16, a capacitor C16, and an inductor L16, a power supply VDD _ MCU is respectively connected to one end of the capacitor C16 and one end of the inductor L16, the other end of the inductor L16 is respectively connected to one end of the resistor R16, one end of the capacitor C16 and one end of the capacitor C16, the other end of the inductor L16 is respectively connected to one end of the capacitor C16, and one end of the capacitor C16 are respectively connected to one end of, the other end of the inductor L5 is connected to one end of a capacitor C15, the other end of a capacitor C16, one end of an inductor L7 and one end of a capacitor C21, the other end of a capacitor C21 is connected to the other end of the inductor L7 and an Rfin pin of an rf power amplifier U5, a power supply VDD _5V is connected to one end of a capacitor C23 and a Vccb pin of an rf power amplifier U5, a Vref 5 pin of the rf power amplifier U5 is connected to one end of a resistor R5 and one end of a resistor R5, the other end of the resistor R5 is connected to one end of a resistor R5 and one end of an inductor B5, the other end of the inductor B5 is connected to a power supply PA _ Vref, one end of the resistor R5 and one end of the capacitor C5, an Rfout/5 pin of the rf power amplifier U5 is connected to one end of the inductor L5, the other end of the inductor L5 is connected to one end of the capacitor C5 and one end of the capacitor C5, the other end of the capacitor C28 is connected with the eighth pin of the low-pass filter U7 and one end of the inductor L12, the other end of the inductor L12 is connected with one end of the capacitor C30, the fourth pin of the low-pass filter U7 is connected with one end of the capacitor C31 and one end of the inductor L14, the other end of the capacitor C31 is connected with one end of the capacitor C32 and one end of the inductor L16, the other end of the inductor L16, the other end of the inductor L14, the other end of the capacitor C30, the other end of the capacitor C27, the other end of the capacitor C56, the other end of the resistor R15, the other end of the resistor R18, the other end of the capacitor C23, the other end of the capacitor.

Preferably, the receiving module includes a balun circuit and an LNA circuit, the balun circuit includes an inductor L4, a capacitor C9, a capacitor C10, a capacitor C2, a capacitor C15 and an inductor L6, one end of the capacitor C9 is defined as RXIP, one end of the capacitor C10 is defined as RXIN, the other end of the capacitor C9 is respectively connected to one end of an inductor L4 and one end of a capacitor C2, the other end of the capacitor C2 is connected to one end of the inductor L6, the other end of the inductor L6 is respectively connected to one end of the capacitor C15 and the other end of the capacitor C10, and the other end of the capacitor C15 and the other end of the inductor L4 are both.

Preferably, the LNA circuit includes an inductor B3, a capacitor C58, a capacitor C25, a capacitor C53, a noise amplifier U6, a resistor R22, an inductor L11, a filter SAW1, a capacitor C60, and a capacitor C33, a power supply VDD _ MCU is connected to one end of the inductor B3, the other end of the inductor B3 is connected to one end of a capacitor C25, one end of a capacitor C53, and a VDD end of the noise amplifier U6, one end of the capacitor C58 is connected to an RFO pin of the noise amplifier U6, a VCTL pin of the noise amplifier U6 is grounded through the resistor R22, an RFI pin of the noise amplifier U22 is connected to one end of the inductor L22, the other end of the inductor L22 is connected to one end of the capacitor C22, the other end of the capacitor C22 is connected to a fourth pin of the filter SAW 22, and a first pin of the.

Preferably, the high-frequency switch control module includes a high-frequency switch U9, a capacitor C32, a capacitor C40, a capacitor C41, an inductor L17, a capacitor C42, an inductor L18 and a transient suppression diode D1, one end of the capacitor C32 is connected to a RF1 pin of the high-frequency switch U9, a V2 pin of the high-frequency switch U9 is connected to one end of a capacitor C41, a V1 pin of the high-frequency switch U9 is connected to one end of a capacitor C1, RFC pins of the high-frequency switch U1 are respectively connected to one end of the inductor L1 and one end of the capacitor C1, the other end of the capacitor C1 is respectively connected to one end of the inductor L1 and one end of the transient suppression diode D1, and the other end of the capacitor C1, the other end of the inductor L36.

Therefore, the utility model discloses following beneficial effect has:

Drawings

Fig. 1 is a block diagram of the present invention.

Fig. 2 is a circuit diagram of the 3.3V power supply circuit of the present invention.

Fig. 3 is a circuit diagram of the 2.85V power supply circuit of the present invention.

Fig. 4 is a circuit diagram of the MCU clock circuit of the present invention.

Fig. 5 is a circuit diagram of the RF clock circuit of the present invention.

Fig. 6 is a circuit diagram of the transmission module of the present invention.

Fig. 7 is a circuit diagram of the balun circuit of the present invention.

Fig. 8 is a circuit diagram of the LNA circuit of the present invention.

Fig. 9 is a circuit diagram of the high frequency switch control module of the present invention.

In the figure: 1. the device comprises a power module 2, a radio frequency chip 3, a clock module 4, a transmitting module 5, a receiving module 6 and a high-frequency switch control module.

Detailed Description

The present invention will be further described with reference to the accompanying drawings and the detailed description.

The embodiment provides a high-performance wireless transceiver supporting a Wi-SUN protocol, as shown in fig. 1 to 9, which includes a power module 1, a radio frequency chip 2, a clock module 3, a transmitting module 4, a receiving module 5, and a high-frequency switch control module 6, where the power module, the clock module, the transmitting module, the receiving module, and the high-frequency switch control module are all connected to the radio frequency chip; the power supply module comprises two paths of outputs, wherein one path of output is a 3.3V power supply circuit, and the other path of output is a 2.85V power supply circuit; the radio frequency chip adopts through VC7300BU, the chip is an MCU + RF SOC, and supports the working frequency band of 902 MHz-928 MHz.

The 3.3V power supply circuit comprises a capacitor C5, a capacitor C6, a resistor R13, a voltage reduction chip U1, a capacitor C1 and an inductor B1, wherein an input power supply 5V _ IN is respectively connected with one end of a capacitor C5, one end of a capacitor C6, one end of a resistor R13 and the input end of a voltage reduction chip U1, the other end of the resistor R13 is connected with the enable end of the voltage reduction chip U1, the output end of the voltage reduction chip U1 is respectively connected with one end of a capacitor C1 and one end of an inductor B1, and the other end of the inductor B1 is connected with the output end of the 3.3V power supply; in order to ensure that the noise on the input power supply is as small as possible, a 1 muF to ground bypass capacitor needs to be connected in parallel with the fourth pin of the voltage reduction chip U1; the third pin of the buck chip U1 is a chip off control pin, a low-level off chip, a high-level enable chip, because the output 3.3V needs to be provided to the rf chip, the LDO cannot be in an off state, and is pulled up to the input voltage through a 10K resistor R13; in order to better suppress noise and improve the stability of the output voltage, a filter capacitor C1 of 1uF or more is connected in parallel with the output end.

The 2.85V power supply circuit comprises a capacitor C8, a voltage reduction chip U2, a resistor R11, a resistor R1, a resistor R2 and a capacitor C18, wherein a 2.85V power supply circuit input end PA _5V is respectively connected with one end of the capacitor C8 and an input end of the voltage reduction chip U2, an enable end of the voltage reduction chip U2 is grounded through a resistor R11, an output end of the voltage reduction chip U2 is respectively connected with one end of a resistor R1, one end of the capacitor C18 and an output end PA _ VREF of the 2.85V power supply circuit, the other end of the resistor R1 is respectively connected with a BP/FB end of the voltage reduction chip U2, and the other end of the resistor R2, the other end of the capacitor C18.

2.85V is output to provide bias voltage for the PA chip, an LDO with adjustable output voltage is selected, and the parallel 1uF capacitor C8 is used for reducing noise and improving the stability of the output voltage; in order to improve the I/O reuse rate, the control pin and the high-frequency switch share the same I/O, the fourth pin of the voltage reduction chip U2 is an output voltage feedback input pin, the resistor R1 and the resistor R2 are used for adjusting the actual output voltage, and when the output voltage is set to be 2.85V, the value of the resistor R1 and the value of the resistor R2 are 12.1K and 4.7K respectively.

The clock module comprises an MCU clock circuit and an RF clock circuit; the MCU clock circuit comprises a capacitor C35, a crystal oscillator X1 and a capacitor C36, wherein one end of the crystal oscillator X1 is grounded through the capacitor C35, and the other end of the crystal oscillator X1 is grounded through the capacitor C36; the RF clock circuit comprises a crystal oscillator X2, a capacitor C54, a resistor R31 and a capacitor C55, wherein a first pin of the crystal oscillator X2 is connected with one end of a capacitor C55, the other end of the capacitor C55 is respectively connected with a second pin of the crystal oscillator X2, one end of a resistor R31, one end of a capacitor C54 and a fourth pin of the crystal oscillator X2, the other end of the resistor R31 is grounded, and the other end of the capacitor C54 is connected with a third pin of the crystal oscillator X2.

The transmitting module comprises a resistor R9, a resistor R10, a capacitor C52, a capacitor C7, an inductor L2, a capacitor C11, a capacitor C13, a capacitor C16, an inductor L16, a capacitor C16, a capacitor L16, a radio frequency power amplifier U16, a capacitor C16, a resistor R16, a capacitor B16, a resistor R16, a capacitor C16, an inductor L16, a capacitor C16, a low pass filter U16, an inductor L16, a capacitor C16 and an inductor L16, a power supply VDD _ MCU is respectively connected with one end of the capacitor C16 and one end of the inductor L16, the other end of the inductor L16 is respectively connected with one end of the resistor R16, one end of the capacitor C16 and one end of the capacitor C16, the other end of the capacitor L16 is respectively connected with one end of the inductor L16, the other end of the capacitor C16 and one end of the capacitor C16 are respectively connected with one end of the other end of the capacitor, the other end of the inductor L5 is connected to one end of a capacitor C15, the other end of a capacitor C16, one end of an inductor L7 and one end of a capacitor C21, the other end of a capacitor C21 is connected to the other end of the inductor L7 and an Rfin pin of an rf power amplifier U5, a power supply VDD _5V is connected to one end of a capacitor C23 and a Vccb pin of an rf power amplifier U5, a Vref 5 pin of the rf power amplifier U5 is connected to one end of a resistor R5 and one end of a resistor R5, the other end of the resistor R5 is connected to one end of a resistor R5 and one end of an inductor B5, the other end of the inductor B5 is connected to a power supply PA _ Vref, one end of the resistor R5 and one end of the capacitor C5, an Rfout/5 pin of the rf power amplifier U5 is connected to one end of the inductor L5, the other end of the inductor L5 is connected to one end of the capacitor C5 and one end of the capacitor C5, the other end of the capacitor C28 is connected with the eighth pin of the low-pass filter U7 and one end of the inductor L12, the other end of the inductor L12 is connected with one end of the capacitor C30, the fourth pin of the low-pass filter U7 is connected with one end of the capacitor C31 and one end of the inductor L14, the other end of the capacitor C31 is connected with one end of the capacitor C32 and one end of the inductor L16, the other end of the inductor L16, the other end of the inductor L14, the other end of the capacitor C30, the other end of the capacitor C27, the other end of the capacitor C56, the other end of the resistor R15, the other end of the resistor R18, the other end of the capacitor C23, the other end of the capacitor.

The transmitting module comprises an output impedance matching and filtering circuit, so that the efficiency and the harmonic of an output signal in a frequency band of 902 MHz-928 MHz are better, P1dB in the frequency band of 902 MHz-928 MHz is 30dBm, a band-pass filter is formed by a resistor C21 and an inductor L7 to filter the interference of an input signal, and the output signal is transmitted to an LPF through the matching circuit; the low-pass filter mainly functions to filter out higher harmonics in an output signal, an integrated low-pass filter from 902MHz to 928MHz is selected, the insertion loss in a pass band is 0.5dB at most, the two/third harmonic suppression can reach 30dB, the impedance of an input/output port is standard 50 omega, and an additional matching circuit is not required to be added.

The receiving module comprises a balun circuit and an LNA circuit, the balun circuit comprises an inductor L4, a capacitor C9, a capacitor C10, a capacitor C2, a capacitor C15 and an inductor L6, one end of the capacitor C9 is defined as RXIP, one end of the capacitor C10 is defined as RXIN, the other end of the capacitor C9 is connected with one end of an inductor L4 and one end of a capacitor C2 respectively, the other end of the capacitor C2 is connected with one end of an inductor L6, the other end of the inductor L6 is connected with one end of a capacitor C15 and the other end of a capacitor C10 respectively, and the other end of the capacitor C15 and the other end of the inductor L.

The LNA circuit comprises an inductor B3, a capacitor C58, a capacitor C25, a capacitor C53, a noise amplifier U6, a resistor R22, an inductor L11, a filter SAW1, a capacitor C60 and a capacitor C33, wherein a power supply VDD _ MCU is connected with one end of the inductor B3, the other end of the inductor B3 is respectively connected with one end of a capacitor C25, one end of a capacitor C53 and the VDD end of the noise amplifier U6, one end of the capacitor C58 is connected with an RFO pin of the noise amplifier U6, a VCTL pin of the noise amplifier U6 is grounded through the resistor R22, an RFI pin of the noise amplifier U22 is connected with one end of an inductor L22, the other end of the inductor L22 is connected with one end of the capacitor C22, the other end of the capacitor C22 is connected with a fourth pin of the filter SAW 22, and a first pin.

In order to improve the receiving sensitivity performance of the module, the scheme of the utility model selects the LNA for signal amplification, and the gain and noise coefficient of the LNA between 902MHz and 928MHz are respectively 15dB and 1 dB; the working mode of the LNA can be switched through an LNA EN pin of the noise amplifier U6, so that the toughness of the module can be enhanced, the LNA can be switched into a Bypass mode to prevent a chip from being damaged when a high-power signal is input, and meanwhile, in order to reduce the interference of environmental noise on a received signal as much as possible, a SAW filter is connected in series at the input end of the LNA, the passband frequency band is 902-928MHz, and the passband insertion loss is 1.5 dB.

The high-frequency switch control module comprises a high-frequency switch U9, a capacitor C32, a capacitor C40, a capacitor C41, an inductor L17, a capacitor C42, an inductor L18 and a transient suppression diode D1, one end of a capacitor C32 is connected with an RF1 pin of the high-frequency switch U9, a V2 pin of the high-frequency switch U9 is connected with one end of a capacitor C41, a V1 pin of the high-frequency switch U9 is connected with one end of a capacitor C1, RFC pins of the high-frequency switch U1 are respectively connected with one end of the inductor L1 and one end of the capacitor C1, the other end of the capacitor C1 is respectively connected with one end of the inductor L1 and one end of the transient suppression diode D1, and the other end of the capacitor C1, the other end of the inductor L1, the other end of the.

The utility model discloses the hardware performance of scheme can satisfy 902MHz ~928 MHz's frequency channel to transmitting power is up to 30dBm, and the receiving sensitivity is at 50Kbps, and 250 bytes package length, and is up to-110 dBm under the condition of packet loss ratio 10%, is a high performance wireless transceiver, in addition the utility model discloses the scheme is the hardware that a section supports Wi-SUN agreement, that is to say can provide a wireless networking scheme that can realize large-scale networking of supporting standard, normative, not binding for the user, can solve several pain points of thing networking trade, standardized agreement, open not binding; large-scale networking application can be realized; the remote transformation that conveniently carries out various thing networking devices of low-power consumption reduces the transformation cost.

The above embodiments are only used for further explanation of the present invention, and it is not understood that the present invention is limited by the protection scope of the present invention, and the technical engineers in the field are right according to the above contents of the present invention.

Claims

1. A high-performance wireless transceiver supporting a Wi-SUN protocol is characterized by comprising a power module, a radio frequency chip, a clock module, a transmitting module, a receiving module and a high-frequency switch control; the power supply module comprises two paths of outputs, wherein one path of output is a 3.3V power supply circuit, and the other path of output is a 2.85V power supply circuit.

2. The wireless transceiver of claim 1, wherein the 3.3V power circuit comprises a capacitor C5, a capacitor C6, a resistor R13, a buck chip U1, a capacitor C1, and an inductor B1, wherein the input power supply 5V _ IN is connected to one end of a capacitor C5, one end of a capacitor C6, one end of a resistor R13, and an input end of a buck chip U1, the other end of the resistor R13 is connected to an enable end of the buck chip U1, an output end of the buck chip U1 is connected to one end of a capacitor C1 and one end of an inductor B1, and the other end of the inductor B1 is connected to an output end VDD _ MCU of the 3.3V power circuit.

3. The wireless transceiver of claim 1, wherein the 2.85V power circuit comprises a capacitor C8, a buck chip U2, a resistor R11, a resistor R1, a resistor R2 and a capacitor C18, the input PA _5V of the 2.85V power circuit is connected to one end of a capacitor C8 and the input of the buck chip U2, the enable end of the buck chip U2 is grounded through a resistor R11, the output end of the buck chip U2 is connected to one end of a resistor R1, one end of a capacitor C18 and the output PA _ VREF of the 2.85V power circuit, the other end of a resistor R1 is connected to the BP/FB end of the buck chip U2, and the other end of a resistor R2, the other end of a capacitor C18 and the other end of a capacitor C8 are grounded.

4. The high-performance wireless transceiver supporting the Wi-SUN protocol of claim 1, wherein the clock module comprises an MCU clock circuit and an RF clock circuit.

5. A high-performance wireless transceiver supporting Wi-SUN protocol according to claim 4, wherein said MCU clock circuit comprises a capacitor C35, a crystal oscillator X1 and a capacitor C36, one end of the crystal oscillator X1 is grounded through a capacitor C35, and the other end of the crystal oscillator X1 is grounded through a capacitor C36.

6. A high-performance wireless transceiver supporting Wi-SUN protocol according to claim 4, wherein the RF clock circuit comprises a crystal oscillator X2, a capacitor C54, a resistor R31 and a capacitor C55, a first pin of the crystal oscillator X2 is connected to one end of a capacitor C55, the other end of the capacitor C55 is connected to a second pin of the crystal oscillator X2, one end of the resistor R31, one end of a capacitor C54 and a fourth pin of the crystal oscillator X2, the other end of the resistor R31 is grounded, and the other end of the capacitor C54 is connected to a third pin of the crystal oscillator X2.

7. The wireless transceiver as claimed in claim 1, wherein the transmitting module includes a resistor R9, a resistor R10, a capacitor C52, a capacitor C7, an inductor L2, a capacitor C11, a capacitor C13, a capacitor C16, an inductor L3, an inductor L5, a capacitor C19, a capacitor C21, an inductor L7, a radio frequency power amplifier U5, a capacitor C23, a resistor R15, an inductor B15, a resistor R15, a capacitor C15, an inductor L15, a capacitor C15, a low pass filter U15, an inductor L15, a capacitor C15, and an inductor L15, the power VDD _ MCU is respectively connected to one end of the capacitor C15 and one end of the inductor L15, the other end of the inductor L15 is respectively connected to one end of the resistor R15, the capacitor C15 and one end of the capacitor C15, the other end of the capacitor C15 and the other end of the capacitor C15 are respectively connected to one end of the capacitor C15, the other end of the capacitor C13 is connected to one end of the capacitor C16, one end of the inductor L3 and one end of the inductor L5, the other end of the inductor L5 is connected to one end of the capacitor C15, the other end of the capacitor C16, one end of the inductor L16 and one end of the capacitor C16, the other end of the capacitor C16 is connected to the other end of the inductor L16 and the Rfin pin of the rf power amplifier U16, the power supply VDD _5V is connected to one end of the capacitor C16 and the Vccb pin of the rf power amplifier U16, the Vref 16 pin of the rf power amplifier U16 is connected to one end of the resistor R16 and one end of the resistor R16, the Vref 16 is connected to one end of the resistor R16 and one end of the inductor B16, the other end of the inductor B16 is connected to the power supply PA _ Vref, one end of the resistor R16 and one end of the capacitor C16, the other end of the inductor L16 is connected to the inductor L16 and the terminal Vcc/Vcc pin of the rf power amplifier U, the other end of the inductor L10 is connected to one end of a capacitor C27 and one end of a capacitor C28, the other end of the capacitor C28 is connected to the eighth pin of the low-pass filter U7 and one end of an inductor L12, the other end of the inductor L12 is connected to one end of a capacitor C30, the fourth pin of the low-pass filter U7 is connected to one end of a capacitor C31 and one end of an inductor L14, the other end of the capacitor C31 is connected to one end of a capacitor C32 and one end of an inductor L16, the other end of the inductor L16, the other end of the inductor L14, the other end of a capacitor C30, the other end of the capacitor C27, the other end of a capacitor C56, the other end of a resistor R15, the other end of a resistor R18, the other end of the capacitor.

8. A high-performance wireless transceiver supporting Wi-SUN protocol according to claim 1, wherein the receiving module includes a balun circuit and an LNA circuit, the balun circuit includes an inductor L4, a capacitor C9, a capacitor C10, a capacitor C2, a capacitor C15 and an inductor L6, one end of the capacitor C9 is defined as RXIP, one end of the capacitor C10 is defined as RXIN, the other end of the capacitor C9 is connected to one end of an inductor L4 and one end of the capacitor C2, the other end of the capacitor C2 is connected to one end of the inductor L6, the other end of the inductor L6 is connected to one end of the capacitor C15 and the other end of the capacitor C10, and the other ends of the capacitor C15 and the inductor L4 are both grounded.

9. The wireless transceiver of claim 8, wherein the LNA circuit comprises an inductor B3, a capacitor C58, a capacitor C25, a capacitor C53, a noise amplifier U6, a resistor R22, an inductor L11, a filter SAW1, a capacitor C60, and a capacitor C33, a power VDD _ MCU is connected to one end of the inductor B3, the other end of the inductor B3 is connected to one end of the capacitor C25, one end of the capacitor C53, and the VDD of the noise amplifier U6, one end of the capacitor C58 is connected to the RFO pin of the noise amplifier U6, the VCTL pin of the noise amplifier U6 is grounded via a resistor R22, the RFI pin of the noise amplifier U6 is connected to one end of the inductor L11, the other end of the inductor L11 is connected to one end of the capacitor C60, the other end of the capacitor C60 is connected to the fourth pin of the SAW filter 1, and the first pin of the filter 1 is connected to one end of the capacitor C33.

10. The wireless transceiver of claim 1, wherein the high frequency switch control module comprises a high frequency switch U9, a capacitor C32, a capacitor C40, a capacitor C41, an inductor L17, a capacitor C42, an inductor L18 and a transient suppression diode D1, one end of a capacitor C32 is connected to an RF1 pin of a high frequency switch U9, a V2 pin of a high frequency switch U9 is connected to one end of the capacitor C41, a V1 pin of a high frequency switch U9 is connected to one end of the capacitor C40, RFC pins of a high frequency switch U8 are connected to one end of an inductor L17 and one end of a capacitor C42, the other end of the capacitor C42 is connected to one end of an inductor L18 and one end of a transient suppression diode D1, the other end of a capacitor C40, the other end of a capacitor C41, the other end of an inductor L17, the other end of an inductor L18 and the other end of a transient suppression diode D1.