CN212757850U

CN212757850U - Ventilation system between wafer prepareeing material

Info

Publication number: CN212757850U
Application number: CN202021158674.1U
Authority: CN
Inventors: 于润泽
Original assignee: Beijing Xupu Technology Co ltd
Current assignee: Beijing Xupu Technology Co ltd
Priority date: 2020-06-19
Filing date: 2020-06-19
Publication date: 2021-03-23
Anticipated expiration: 2030-06-19

Abstract

The utility model belongs to the technical field of air purification ventilation equipment and specifically relates to a ventilation system between wafer prepareeing material is related to. The device comprises an air outlet machine arranged on the top wall of the material preparation room, an exhaust fan arranged in the middle of the side wall of the material preparation room, a cyclone dust collector connected with an air outlet pipeline of the exhaust fan, a spray tower connected with a pipeline of the cyclone dust collector, a spray device arranged in the spray tower, a sedimentation tank arranged at the bottom of the spray tower, a clean water tank connected with a pipeline of the spray device, and a water pump arranged in the clean water tank. The utility model discloses have the good effect of ventilation, air purification.

Description

Ventilation system between wafer prepareeing material

Technical Field

The utility model belongs to the technical field of air purification ventilation equipment and specifically relates to a ventilation system between wafer prepareeing material is related to.

Background

Wafers are the basic material for manufacturing semiconductor chips, and the most important raw material of semiconductor integrated circuits is silicon, so that the corresponding is silicon wafers. Silicon is widely found in nature in rocks, grits in the form of silicates or silica, and the manufacture of silicon wafers can be summarized in three basic steps: silicon extraction and purification, monocrystalline silicon growth and wafer molding. First, silicon purification is carried out by placing a sand raw material into an electric arc furnace at a temperature of about 2000 ℃ in the presence of a carbon source, and chemically reacting carbon with silicon dioxide in the sand (carbon combines with oxygen to leave silicon) at high temperature to obtain pure silicon with a purity of about 98%, also called metallurgical grade silicon, which is not pure enough for microelectronic devices, because the electrical properties of the semiconductor material are very sensitive to the concentration of impurities, thus further purifying metallurgical grade silicon: the crushed metallurgical-grade silicon and gaseous hydrogen chloride are subjected to chlorination reaction to generate liquid silane, and then high-purity polycrystalline silicon with the purity as high as 99.999999999 percent is obtained through distillation and chemical reduction processes, so that the high-purity polycrystalline silicon becomes electronic-grade silicon. The wafer manufacturer melts the polysilicon, seeds are seeded into the melt, and the seed is slowly pulled out to form a cylindrical monocrystalline silicon ingot, which is called "crystal growth" because the seed is gradually grown from a molten silicon starting material in a manner that the crystal is oriented in one crystal plane. The silicon crystal bar is cut, barreled, sliced, chamfered, polished, laser etched and packed to form the basic material of integrated circuit factory, i.e. silicon wafer.

The prior publication No. CN109718639A discloses a harmful gas comprehensive treatment system, which comprises: a housing provided with an inflow part for allowing harmful gas to flow in and a discharge part for discharging purified exhaust gas; a washing and dust removing device which is composed of a plurality of filter members connected to the inflow part and allowing harmful gas to penetrate and a washer provided with a plurality of nozzles for spraying cleaning liquid to the filter members, and eliminates HF gas and HCl gas in the harmful gas; an electric dust collector which is arranged at the rear end of the washing and dust removing device and eliminates liquid drops and mist in harmful gas; the catalytic reaction device, make the harmful gas through the electric dust collector flow into and react with decomposition catalyst or reduction catalyst to eliminate nitrous oxide gas, then discharge the exhaust gas without harmful component.

The principle of the technical scheme is that harmful gas is introduced into an inflow part, the harmful gas flows into a washing and dedusting device through the inflow part, and a plurality of washers of nozzles in the washing and dedusting device spray cleaning liquid to a filter member to eliminate HF gas and HCl gas in the harmful gas; the electric dust collector eliminates liquid drops and mist in the harmful gas; the gas enters the catalytic reaction device after passing through the washing dust removal device and the electric dust collection device, the catalytic reaction device enables the harmful gas to react with the reduction catalyst, nitrous oxide gas in the harmful gas is eliminated, and then the waste gas with the harmful components eliminated is discharged from the discharge part.

The above prior art solutions have the following drawbacks: in the preparation process of the wafer, harmful gas treatment and purification are carried out, and silicon dust is generated, the silicon dust is suspended in the air to pollute the operating environment, and operators can be injured by the environment after staying in the environment for a long time.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing a ventilation system between wafer prepareeing material, have the good effect of ventilating, air purification to the not enough of prior art existence.

The above utility model discloses an above-mentioned utility model purpose can realize through following technical scheme:

a ventilation system of a wafer material preparation room comprises an air outlet machine arranged on the top wall of the material preparation room, an exhaust fan arranged at the middle part of the side wall of the material preparation room, a cyclone dust collector connected with an exhaust fan air outlet pipeline, a spray tower connected with the pipeline of the cyclone dust collector, a spray device arranged in the spray tower, a sedimentation tank arranged at the bottom of the spray tower, a clear water tank connected with the pipeline of the spray device, and a water pump arranged in the clear water tank.

By adopting the technical scheme, the air in the wafer material preparation room is extracted by the exhaust fan, the extracted air enters the cyclone dust collector, the cyclone dust collector is used for treating silicon dust in the air, the treated air is sent into the spray tower, the clean water tank is used for providing water for the spray device in the spray tower through the water pump, the spray device in the spray tower is used for washing the air, so that HF (hydrogen fluoride) gas and HCl (hydrogen chloride) gas in the air are dissolved in the water, and the water after absorbing the HF gas and the HCl gas also contains partial silicon dust and flows into the sedimentation tank for sedimentation, so that the treatment and purification of the silicon dust, the HF gas and the HCl gas in the air in the material preparation room are realized; the air outlet machine blows air to the material preparation room, so that the ventilation of the material preparation room is smooth, and the content of silicon dust and harmful gas in the air is effectively reduced.

The present invention may be further configured in a preferred embodiment as: and the gas outlet pipe pipeline of the cyclone dust collector is connected with a buffer tank, and the gas outlet pipe pipeline of the buffer tank is connected with the spray tower pipeline.

Through adopting above-mentioned technical scheme, the air after cyclone handles enters into the buffer tank, carries out preliminary storage in the buffer tank, and gas in the buffer tank is the entering into the spray column at the uniform velocity relatively, makes spray set in the spray column can carry out abundant washing to the air, avoids the air too fast or too much entering spray column, leads to the washing not thorough, can't effectual HF gas and the HCl gas of getting rid of in the air.

The present invention may be further configured in a preferred embodiment as: and a nitrogen gas access pipe is arranged on the buffer tank and is connected with a nitrogen gas compressor through a pipeline.

Through adopting above-mentioned technical scheme, nitrogen compressor passes through nitrogen gas access pipe and inserts the interior nitrogen gas of pipe to the buffer tank, and nitrogen gas can reduce the content of HF gas and HCl gas in the air, makes HF gas and HCl gas enter into the spray column after fully contacting with water, and then dissolves in water.

The present invention may be further configured in a preferred embodiment as: the upper part of the sedimentation tank is connected with a clean water tank pipeline.

Through adopting above-mentioned technical scheme, upper portion is the weak acid solution that HF gas and HCl gas dissolved in water in the sedimentation tank, and solution concentration is lower, is difficult for the later stage to collect, makes it flow into in the clear water pond, carries out the washing to the air that contains HF gas and HCl gas in entering into the spray column once more, can not only improve the concentration of solution and be convenient for the later stage to collect, has realized the circulation of water, the water economy resource moreover.

The present invention may be further configured in a preferred embodiment as: the spraying device comprises a spraying pipe laid in the spraying tower, the spraying pipe is connected with a water pump pipeline, and a spraying head is arranged on the spraying pipe.

Through adopting above-mentioned technical scheme, shower and clean water basin intercommunication, and carry out the washing through the shower head to the air that enters into in the spray column, it is convenient to use.

The present invention may be further configured in a preferred embodiment as: the upper end portion in the spray tower is vertically provided with a spray mounting frame, and the spray pipe is spirally arranged on the spray mounting frame.

Through adopting above-mentioned technical scheme, the shower spiral sets up on spraying the mounting bracket, can evenly wash the air that enters into in the spray column, can make HF gas and HCl gas fully dissolve in aqueous.

The present invention may be further configured in a preferred embodiment as: and a plurality of groups of guide plates are uniformly arranged in the spray tower along the axial direction, and guide grooves are formed in the guide plates.

Through adopting above-mentioned technical scheme, set up the guide plate and be used for prolonging the dwell time of water, make HF gas and HCl gas fully contact with water, improve dissolving efficiency.

The present invention may be further configured in a preferred embodiment as: the guide plates are arranged in a fan shape, and the guide plates which are adjacent up and down are distributed in a staggered mode.

Through adopting above-mentioned technical scheme, set up multiunit guide plate crisscross distribution from top to bottom, further make HF gas and HCl gas and water contact, dissolve efficiently.

To sum up, the utility model discloses a following at least one useful technological effect:

1. the utility model discloses in be provided with out fan, the air exhauster, cyclone, the spray column, settling basin and clean water basin, the air exhauster, cyclone, the spray column, the clean water basin connects gradually through the pipeline, the air exhauster sends into cyclone with the air that contains silicon dust, HF gas and HCl gas, cyclone clears away the silicon dust, the spray column washes the air of removing the silicon dust, make HF gas and HCl gas dissolve in the water, the water after the washing enters into the settling basin and subsides, convenient later stage collection silicon dust, the process is simple, the practicality is strong, can carry out effectual purification to the air in the wafer operation room; the air outlet machine blows air to the operation room, so that the operation space between the wafers is ensured to be ventilated smoothly, and the content of silicon dust, HF gas and HCl gas between the wafers is reduced.

2. The utility model discloses in be provided with the spray column, upper portion is provided with the spray mounting bracket in the spray column, the spiral is installed the shower on the spray mounting bracket, evenly be provided with the shower nozzle on the shower, shower and clean water basin pipe connection, from the top down crisscross guide plate that is provided with on the spray column inside wall, the air that contains HF gas and HCl gas washes in the spray column, the dwell time of rivers can be prolonged to the guide plate, make the air that contains HF gas and HCl gas fully contact with water, make HF gas and HCl gas fully dissolve in aqueous.

Drawings

Fig. 1 is a schematic view of the assembly structure of the present invention.

Fig. 2 is a cross-sectional view of the spray tower of fig. 1.

In the figure, 1, an exhaust fan; 2. a cyclone dust collector; 3. a spray tower; 4. a sedimentation tank; 5. a clean water tank; 6. a water pump; 7. a buffer tank; 8. a nitrogen compressor; 9. an air outlet machine; 10. a shower pipe; 11. a shower head; 12. spraying the mounting rack; 13. a baffle; 14. and a diversion trench.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings.

The utility model discloses a ventilation system of wafer preparation room, refer to fig. 1 and fig. 2, comprising an air outlet machine 9 arranged on the top wall of the preparation room and an exhaust fan 1 arranged in the middle of the side wall of the preparation room, an air outlet pipeline of the exhaust fan 1 is connected with a cyclone dust collector 2, an outlet pipeline of the cyclone dust collector 2 is connected with a buffer tank 7, a nitrogen gas access pipe is arranged on the buffer tank 7, the nitrogen gas access pipe is connected with a nitrogen gas compressor 8, an outlet pipeline of the buffer tank 7 is connected with a spray tower 3, a settling basin 4 is arranged at the bottom of the spray tower 3, the settling basin 4 is communicated with the bottom of the spray tower 3, a clear water basin 5 is arranged near one side of the settling basin 4, the clear water basin 5 is connected with the upper part of the settling basin 4 through a pipeline, the upper part in the settling basin 4 is a weak acid solution of HF gas and HCl gas dissolved in water, the solution concentration is lower, the later period collection is, the concentration of the solution is improved, so that later-stage collection is facilitated, water circulation is realized, and water resources are saved; a water pump 6 is arranged in the clean water tank 5.

Referring to fig. 1 and 2, a spray device is installed in the spray tower 3, the spray device comprises a spray mounting frame 12 welded at the upper end part in the spray tower 3, the spray mounting frame 12 extends downwards along the axial direction of the spray tower 3, a spray pipe 10 is spirally installed on the spray mounting frame 12, water outlets are uniformly formed in the spray pipe 10, and spray heads 11 are installed on the water outlets; install the clamp (not marked in the figure) on the spray mounting bracket 12, shower 10 passes through the clamp and installs on spray mounting bracket 12, the external pipeline of

shower

10 and 5 pipeline intercommunications in clean water basin, clean water basin 5 provides water for spray set through water pump 6, shower head 11 washes the air in the tower, absorb the aquatic after HF gas and HCl gas still contain partial silicon dust, flow into and subside in the sedimentation tank, the realization is to the silicon dust in the air between prepareeing materials, HF gas and HCl gas's processing purifies. Evenly install multiunit guide plate 13 along the 3 axial of spray column in the spray column 3, guide plate 13 installs for fan-shaped, upper and lower adjacent guide plate 13 staggered distribution, guiding gutter 14 has been seted up on the guide plate 13, guiding gutter 14 export intermediate position in towards spray column 3, guide plate 13 of upper and lower staggered distribution can prolong the dwell time of water in spray column 3, the time of making the contact of HF gas and HCl gas and water is longer, and dissolution efficiency is high.

The implementation principle of the embodiment is as follows:

an exhaust fan 1 extracts air in a wafer material preparation room, the extracted air enters a cyclone dust collector 2, the cyclone dust collector 2 treats silicon dust in the air, the cyclone dust collector 2 is connected with a buffer tank 7 through a pipeline, the buffer tank 7 stores the air after the silicon dust treatment and uniformly conveys the air into a spray tower 3, a clean water tank 5 supplies water to a spray pipe 10 through a water pump 6, a spray head 11 sprays water to wash the air after the silicon dust treatment, HF gas and HCl gas in the air after the silicon dust treatment are dissolved in the water, the aqueous solution containing HF and HCl flows into a sedimentation tank 4 along a guide plate 13, the aqueous solution containing a small amount of silicon dust, the silicon dust is settled in the sedimentation tank 4, after settlement is completed, the clear liquid at the upper part flows into the clean water tank 5 through the pipeline for water circulation, and the concentration of the HF and HCl aqueous solution is improved, the HF and HCl aqueous solution can be conveniently treated and classified and collected at the later stage; the air outlet machine 9 blows air to the material preparation room, so that the ventilation of the material preparation room is smooth, and the content of silicon dust and harmful gas in the air is effectively reduced.

The embodiment of this specific implementation mode is the preferred embodiment of the present invention, not limit according to this the utility model discloses a protection scope, so: all equivalent changes made according to the structure, shape and principle of the utility model are covered within the protection scope of the utility model.

Claims

1. A wafer prepares material room ventilation system which characterized in that: the device comprises an air outlet machine (9) arranged on the top wall of a material preparation room, an exhaust fan (1) arranged in the middle of the side wall of the material preparation room, a cyclone dust collector (2) connected with an air outlet pipeline of the exhaust fan (1), a spray tower (3) connected with the cyclone dust collector (2) through a pipeline, a spray device arranged in the spray tower (3), a sedimentation tank (4) arranged at the bottom of the spray tower (3), a clean water pool (5) connected with the spray device through a pipeline, and a water pump (6) arranged in the clean water pool (5).

2. The wafer preparation chamber ventilation system of claim 1, wherein: and an air outlet pipe of the cyclone dust collector (2) is connected with a buffer tank (7), and an air outlet pipe of the buffer tank (7) is connected with a spray tower (3) through a pipeline.

3. The wafer preparation chamber ventilation system of claim 2, wherein: and a nitrogen gas access pipe is arranged on the buffer tank (7), and the nitrogen gas access pipe is connected with a nitrogen gas compressor (8) through a pipeline.

4. The wafer preparation chamber ventilation system of claim 2, wherein: the upper part of the sedimentation tank (4) is connected with a clean water tank (5) through a pipeline.

5. The wafer preparation chamber ventilation system of claim 3, wherein: the spraying device comprises a spraying pipe (10) laid in the spraying tower (3), the spraying pipe (10) is connected with a water pump (6) through a pipeline, and a spraying head (11) is arranged on the spraying pipe (10).

6. The wafer preparation chamber ventilation system of claim 5, wherein: the upper end portion in the spray tower (3) is vertically provided with a spray mounting rack (12), and the spray pipe (10) is spirally arranged on the spray mounting rack (12).

7. The wafer preparation chamber ventilation system of claim 1, wherein: a plurality of groups of guide plates (13) are uniformly arranged in the spray tower (3) along the axial direction, and guide grooves (14) are formed in the guide plates (13).

8. The wafer preparation chamber ventilation system of claim 7, wherein: the guide plates (13) are arranged in a fan shape, and the guide plates (13) which are adjacent up and down are distributed in a staggered mode.