CN212682829U - Laser concealed cutting device for silicon wafer - Google Patents
Laser concealed cutting device for silicon wafer Download PDFInfo
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- CN212682829U CN212682829U CN202021315170.6U CN202021315170U CN212682829U CN 212682829 U CN212682829 U CN 212682829U CN 202021315170 U CN202021315170 U CN 202021315170U CN 212682829 U CN212682829 U CN 212682829U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 59
- 239000010703 silicon Substances 0.000 title claims abstract description 59
- 238000005520 cutting process Methods 0.000 title claims abstract description 39
- 235000012431 wafers Nutrition 0.000 claims abstract description 55
- 230000007246 mechanism Effects 0.000 claims abstract description 33
- 238000003698 laser cutting Methods 0.000 claims abstract description 24
- 238000006073 displacement reaction Methods 0.000 claims abstract description 22
- 238000012544 monitoring process Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000005057 refrigeration Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000010287 polarization Effects 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 229940095676 wafer product Drugs 0.000 abstract description 5
- 239000002699 waste material Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000009417 prefabrication Methods 0.000 abstract 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000010330 laser marking Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Abstract
The utility model relates to a laser recessive cutting process of silicon wafers, which comprises three steps of cutting prefabrication, cutting operation, expanding operation and the like. The laser concealed cutting device for the silicon wafer comprises a positioning base frame, a workbench, a positioning groove, a clamp, a linear driving guide rail, a three-axis displacement table, a three-dimensional rotary table, a bearing table, a laser line marking instrument, a laser cutting device, a lifting driving mechanism, a temperature sensor, a pressure sensor, a displacement sensor and a driving circuit. The utility model has the advantages of simple and easy-to-master processing technology, normative performance, and effectively improved working efficiency and precision of silicon wafer processing operation; on the other hand, the processing operation equipment has simple structure, high operation precision and automatic operation, and effectively overcomes the defects of serious material waste in the silicon wafer processing and microcrack and edge breakage in the silicon wafer processing in the traditional process and equipment, thereby greatly improving the precision and the processing efficiency of the silicon wafer product processing operation and being beneficial to reducing the cost.
Description
Technical Field
The utility model relates to a silicon wafer cutting equipment belongs to laser micromachining field.
Background
At present, in the silicon wafer processing and preparation operation, the adopted traditional processing technology usually cuts a crystal bar through laser or a diamond cutter wheel, and then grinds a cut wafer blank through the diamond cutter wheel, so as to obtain a finished product silicon wafer product, although the traditional processing technology can meet the use requirement, on one hand, the material loss in the silicon wafer processing is serious, the processing technology is complex, and the processing efficiency is low; on the other hand, the diamond cutter wheel is directly contacted with the surface of a crystal bar and a wafer blank in the silicon wafer processing process, so that the microcrack and edge breakage of the silicon wafer are serious, and simultaneously, due to the V-shaped or U-shaped structure of the cutter wheel, the silicon wafer with an ultra-narrow cutting path of less than 20 micrometers cannot be cut due to the structural limitation of the cutter wheel, so that the precision of the silicon wafer cutting and processing operation is seriously limited, and the use requirement is difficult to effectively meet.
Therefore, in view of the current situation, a new technology is needed to be developed to overcome the defects of the traditional technology and equipment in silicon wafer cutting, and improve the working efficiency and precision of silicon wafer processing operation.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects in the prior art, the utility model provides a brand-new laser concealed cutting device for silicon wafers, on one hand, the utility model has simple structure and flexible and convenient use, can effectively meet the requirements of processing operation of silicon wafers with various structural types, can overcome the structural limitation of a transmission cutting tool and can not meet the requirements of cutting operation of structures below 20 microns, and has high working efficiency and precision of the processing operation; on the other hand, the defects of serious material waste and microcrack and edge breakage in the silicon wafer processing in the traditional process and equipment are effectively overcome, so that the precision and the processing efficiency of the silicon wafer product processing operation are further improved, and the cost is reduced.
In order to achieve the above purpose, the present invention is realized by the following technical solution:
a laser recessive cutting device for silicon wafers comprises a positioning base frame, a workbench, positioning grooves, a clamp, linear driving guide rails, a three-axis displacement table, a three-dimensional rotary table, a bearing table, a laser line marking instrument, a laser cutting device, lifting driving mechanisms, a temperature sensor, a pressure sensor, a displacement sensor and a driving circuit, wherein the positioning base frame is of a frame structure with a rectangular cross section, the workbench is embedded in the positioning base frame and is coaxially distributed with the positioning base frame, the lower end surface of the workbench is connected with the bottom of the positioning base frame through at least two lifting driving mechanisms and is in sliding connection with the side surface of the positioning base frame, the positioning grooves are of an L-shaped groove-shaped structure in cross section, the lower end surface of the positioning table is parallel to the upper end surface of the workbench and is in sliding connection with the upper end surface of the workbench through the linear driving guide rails, the two positioning grooves form a bearing group in the positioning grooves, the, when the distance between the two bearing grooves is 0, the two bearing grooves form a groove-shaped structure with a U-shaped axial section and an axis which is vertically distributed with the upper end surface of the working table, a plurality of clamps are arranged in the bearing grooves in a progressive way around the axis of the bearing grooves and are connected with the side walls of the bearing grooves, the bearing table is connected with the lower end surface of the top of the positioning base frame through a three-axis displacement table, the front end surface of the bearing table is connected with a laser striping machine and a laser cutting device respectively through a three-dimensional rotary table, wherein the laser cutting devices are coaxially distributed with the bearing table, at least two laser striping machines are uniformly distributed around the axis of the laser cutting device, the optical axes of the laser striping machine and the laser cutting device form an included angle of 30-90 degrees with the upper end surface of the working table, the number of the temperature sensors is consistent with the number of the positioning grooves, the upper end surface of each, and the driving circuit is embedded in the outer surface of the positioning base frame and is respectively and electrically connected with the clamp, the linear driving guide rail, the three-axis displacement table, the three-dimensional rotary table, the bearing table, the laser line marking instrument, the laser cutting device, the lifting driving mechanism, the temperature sensor, the pressure sensor and the displacement sensor.
Furthermore, the side surface of the workbench is in sliding connection with the inner surface of the side wall of the positioning base frame through a sliding chute, a bearing spring is arranged in the sliding chute, the bearing spring and the sliding chute are coaxially distributed, and two ends of the bearing spring are respectively and vertically connected with the bottom of the positioning base frame and the lower end surface of the workbench.
Furthermore, the lower end face of the positioning groove is in sliding connection with the linear driving guide rail through a sliding block, the pressure sensor and the displacement sensor are both connected with the sliding block, a plurality of through holes are uniformly distributed at the bottom of the positioning groove, the aperture of each through hole is not more than 5 mm, the axis of each through hole is vertically distributed with the bottom of the positioning groove, and the total area of the through holes is 20% -60% of the surface area of the bottom of the positioning groove.
Furthermore, the constant head tank under the terminal surface equipartition a plurality of with constant head tank terminal surface parallel distribution's heat pipe, just semiconductor refrigeration mechanism is established to the workstation up end that the heat pipe corresponds, semiconductor refrigeration mechanism and drive circuit electrical connection.
Furthermore, the laser cutting device is characterized in that the polarization ratio of laser beams is not less than 50:1, the wavelength is not less than 1000nm, the energy value is 0.1-100 muj, the width of the laser beams is not more than 10 nm, and the laser cutting device is any one of infrared laser, green laser and ultraviolet laser.
Furthermore, the top of the positioning base frame is provided with at least one monitoring camera, the optical axis of the monitoring camera forms an included angle of 30-90 degrees with the upper end surface of the workbench and intersects with the middle point of the workbench, the side surface of the positioning base frame is provided with at least one exhaust fan, the exhaust fan is positioned above the workbench, the axial line of the exhaust fan forms an included angle of 0-60 degrees with the upper end surface of the workbench, and the monitoring camera and the exhaust fan are electrically connected with the driving circuit.
Furthermore, the lifting driving mechanism is any one of an electric telescopic rod mechanism, an electric motor driving gear rack mechanism, a worm and gear mechanism and an electromagnetic telescopic rod mechanism.
Further, the driving circuit is a circuit system based on any one of a programmable controller and an internet-of-things controller.
The utility model has the advantages of simple structure, flexible and convenient use, capability of effectively meeting the requirements of silicon wafer processing operation of various structural types, capability of overcoming the structural limitation of the transmission cutting tool and failing to meet the requirements of structure cutting operation below 20 microns, and high working efficiency and precision of processing operation; on the other hand, the defects of serious material waste and microcrack and edge breakage in the silicon wafer processing in the traditional process and equipment are effectively overcome, so that the precision and the processing efficiency of the silicon wafer product processing operation are further improved, and the cost is reduced.
Drawings
The present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic view of the process flow of the present invention.
Detailed Description
In order to make the technical means, creation features, achievement purposes and functions of the present invention easy to understand, the present invention is further described below with reference to the following embodiments.
As shown in fig. 1, a laser recessive cutting device for silicon wafers comprises a positioning pedestal 1, a workbench 2, a positioning groove 3, a clamp 4, a linear driving guide rail 5, a three-axis displacement table 6, a three-dimensional turntable 7, a bearing table 8, a laser striping machine 9, a laser cutting device 10, a lifting driving mechanism 11, a temperature sensor 12, a pressure sensor 13, a displacement sensor 14 and a driving circuit 15, wherein the positioning pedestal 1 is a frame structure with a rectangular cross section, the workbench 2 is embedded in the positioning pedestal 1 and coaxially distributed with the positioning pedestal 1, the lower end surface of the workbench is connected with the bottom of the positioning pedestal 1 through at least two lifting driving mechanisms 11 and is in sliding connection with the side surface of the positioning pedestal 1, the positioning groove 3 is in a groove-shaped structure with an L-shaped cross section, the lower end surface of the positioning groove is distributed in parallel with the upper end surface of the workbench 2 and is in sliding connection with the upper end surface of the, in the locating slot 3, two locating slots 3 form a bearing group, the bearing slots 3 in the same bearing group are symmetrically distributed and have an interval of 0-5 cm, when the interval between the two bearing slots 3 is 0, the two bearing slots 3 form a groove-shaped structure with a U-shaped axial section and an axis vertical to the upper end face of the workbench 2, a plurality of clamps 4 are arranged in the bearing slots 3 around the axis of the bearing slots 3 and are connected with the side walls of the bearing slots 3, the bearing table 8 is connected with the lower end face of the top of the locating base frame 1 through a three-axis displacement table 7, the front end face of the bearing table 8 is respectively connected with a laser marking instrument 9 and a laser cutting device 10 through a three-dimensional turntable 7, wherein the laser cutting devices 10 are coaxially distributed with the bearing table 8, at least two laser marking instruments 9 are uniformly distributed around the axis of the laser cutting marking device 10, and the optical axes of the laser instruments 9 and the laser cutting device 10 form an included angle of 30-90 degrees with the upper end, the quantity of the temperature sensors 12 is consistent with that of the positioning grooves 3, the upper end face of each positioning groove 3 is hinged to one temperature sensor 12 through an elastic hinge 16, the pressure sensors 13 and the displacement sensors 14 are respectively located at the lower end face of each positioning groove 3 and connected with the lower end face of each positioning groove 3, the driving circuit 15 is embedded in the outer surface of the positioning base frame 1 and is respectively electrically connected with the clamp 4, the linear driving guide rail 5, the three-axis displacement table 6, the three-dimensional rotary table 7, the bearing table 8, the laser line marking instrument 9, the laser cutting device 10, the lifting driving mechanism 11, the temperature sensors 12, the pressure sensors 13 and the displacement sensors 14.
The side surface of the workbench 2 is slidably connected with the inner surface of the side wall of the positioning pedestal 1 through a chute 20, a bearing spring 21 is arranged in the chute 20, the bearing spring 21 and the chute 20 are coaxially distributed, and two ends of the bearing spring are respectively and vertically connected with the bottom of the positioning pedestal 1 and the lower end surface of the workbench 2.
Meanwhile, the lower end face of the positioning groove 3 is in sliding connection with the linear driving guide rail 5 through a sliding block 17, the pressure sensor 13 and the displacement sensor 14 are both connected with the sliding block 17, a plurality of through holes 21 are uniformly distributed at the bottom of the positioning groove 3, the aperture of each through hole 21 is not more than 5 mm, the axis of each through hole is vertically distributed with the bottom of the positioning groove 3, and the total area of each through hole 21 is 20% -60% of the surface area of the bottom of the positioning groove 3.
It should be particularly noted that, a plurality of heat pipes 18 distributed in parallel with the lower end surface of the positioning groove 3 are uniformly distributed on the lower end surface of the positioning groove 3, and a semiconductor refrigeration mechanism 19 is arranged on the upper end surface of the workbench 3 corresponding to the heat pipes 18, and the semiconductor refrigeration mechanism 19 is electrically connected with the driving circuit 15.
It should be noted that the laser cutting device 10 is a laser beam with a polarization ratio of not less than 50:1, a wavelength of not less than 1000nm, an energy value of 0.1-100 muj, a laser beam width of not more than 10 nm, and is any one of an infrared laser, a green laser and an ultraviolet laser.
In addition, the top of the positioning base frame 1 is provided with at least one monitoring camera 22, the optical axis of the monitoring camera 22 forms an included angle of 30-90 degrees with the upper end surface of the workbench 2 and intersects with the middle point of the workbench 2, the side surface of the positioning base frame 1 is provided with at least one exhaust fan 23, the exhaust fan 23 is positioned above the workbench, the axial line of the exhaust fan and the upper end surface of the workbench 2 form an included angle of 0-60 degrees, and the monitoring camera 22 and the exhaust fan 23 are both electrically connected with the driving circuit 15.
Preferably, the lifting driving mechanism 11 is any one of an electric telescopic rod mechanism, an electric motor driving gear rack mechanism, a worm and gear mechanism and an electromagnetic telescopic rod mechanism.
In this embodiment, the driving circuit 15 is a circuit system based on any one of a programmable controller and an internet-of-things controller.
In the specific implementation of the novel cutting machine, the cutting operation is carried out according to the following steps:
s1, cutting and prefabricating, namely firstly installing and positioning the silicon wafer to be cut through a positioning mechanism, enabling the silicon wafer to be cut to be distributed in parallel with a horizontal plane, then setting a cutting path of the silicon wafer to be cut according to cutting operation requirements, setting a plurality of cracking point positions along the cutting path, then carrying out laser marking on the cutting path and the cracking points on the cutting operation surface of the silicon wafer to be cut, and simultaneously continuously carrying out temperature acquisition operation on the cutting operation surface of the silicon wafer to be cut;
s2, cutting, namely firstly adjusting the polarization ratio, the laser wavelength and the laser power value of the laser beam of the laser cutter according to the cutting path and the burst point position set in the step S1, then enabling the laser beam of the laser cutter to carry out cutting operation along the cutting path and the burst point position set in the step S1 according to the set parameters, wherein in the cutting process, the optical axis of the laser beam of the laser cutter is vertically distributed with the upper end face of the silicon wafer to be cut, and forced cooling operation is carried out on the side surface and the lower surface of the silicon wafer to be cut according to the temperature change of the cutting operation surface of the silicon wafer to be cut, so that the temperature of the cutting operation surface of the silicon wafer to be cut is not more than 10 ℃ of room temperature, and the laser cutter stands by and keeps the holding and positioning state of;
and S3, expanding the silicon wafer, wherein after the cutting operation of the step S2 is completed, the silicon wafers at the two sides of the cutting path are simultaneously applied with driving acting forces with the same magnitude and opposite directions, so that the expansion operation of the cut silicon wafers is realized, and then the cutting surface and the outer surface of the expanded silicon wafers are simultaneously subjected to purification treatment, so that finished cut silicon wafer products can be obtained.
It is important to note that in the step S1, the distance between the burst points is set to be 1-20 μm, the size is 1-10 μm, the depth is 20% -80% of the thickness of the silicon wafer to be cut, and the longitudinal length of the burst points is 10% -20% of the thickness of the silicon wafer to be cut.
And simultaneously, in the step S1, when the silicon wafer to be cut is installed and positioned by the positioning mechanism, a layer of blue film is pasted on the lower end surface of the silicon wafer to be cut, the axial section of the blue film is in a U-shaped groove-shaped structure which is coaxially distributed with the silicon wafer to be cut, and the depth of the blue film is not more than 1/3 of the thickness of the silicon wafer to be cut.
Meanwhile, in the step S2, the laser beam polarization ratio of the laser cutter is not less than 50:1, the wavelength is not less than 1000nm, the energy value at the position of the burst point is 0.1-100 muj, and the laser beam width is not more than 10 nm.
The utility model has the advantages of simple structure, flexible and convenient use, capability of effectively meeting the requirements of silicon wafer processing operation of various structural types, capability of overcoming the structural limitation of the transmission cutting tool and failing to meet the requirements of structure cutting operation below 20 microns, and high working efficiency and precision of processing operation; on the other hand, the defects of serious material waste and microcrack and edge breakage in the silicon wafer processing in the traditional process and equipment are effectively overcome, so that the precision and the processing efficiency of the silicon wafer product processing operation are further improved, and the cost is reduced.
Those skilled in the art should understand that the present invention is not limited by the above embodiments. The foregoing embodiments and description have been made only for the purpose of illustrating the principles of the invention. The present invention can be further modified and improved without departing from the spirit and scope of the present invention. Such changes and modifications are intended to be within the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A laser stealth-dicing device for a silicon wafer is characterized in that: the laser concealed cutting device for the silicon wafer comprises a positioning base frame, a workbench, positioning grooves, a clamp, a linear driving guide rail, a three-axis displacement table, a three-dimensional rotary table, a bearing table, a laser line marking instrument, a laser cutting device, lifting driving mechanisms, a temperature sensor, a pressure sensor, a displacement sensor and a driving circuit, wherein the positioning base frame is of a frame structure with a rectangular cross section, the workbench is embedded in the positioning base frame and is coaxially distributed with the positioning base frame, the lower end surface of the workbench is connected with the bottom of the positioning base frame through at least two lifting driving mechanisms and is in sliding connection with the side surface of the positioning base frame, the positioning grooves are of an L-shaped groove-shaped structure in cross section, the lower end surface of the positioning groove is in parallel distribution with the upper end surface of the workbench and is in sliding connection with the upper end surface of the workbench through the linear driving guide rail, two positioning grooves in the positioning grooves form a bearing group, the, and when the interval between two bearing grooves is 0, two bearing grooves form a groove-shaped structure with U-shaped axial section and vertically distributed axis and the upper end surface of the workbench, the clamps are a plurality of and are arranged in the bearing grooves around the axis of the bearing grooves and connected with the side walls of the bearing grooves, the bearing tables are connected with the lower end surface of the top of the positioning base frame through a three-axis displacement table, the front end surfaces of the bearing tables are respectively connected with a laser line marking instrument and a laser cutting device through a three-dimensional rotary table, wherein the laser cutting devices are coaxially distributed with the bearing tables, at least two laser line marking instruments are uniformly distributed around the axis of the laser cutting device, the optical axes of the laser line marking instrument and the laser cutting device form an included angle of 30-90 degrees with the upper end surface of the workbench, the number of the temperature sensors is consistent with the number of the positioning grooves, the upper end surface of each positioning groove, The displacement sensor is respectively positioned at the lower end face of the positioning groove and connected with the lower end face of the positioning groove, and the driving circuit is embedded in the outer surface of the positioning base frame and is respectively electrically connected with the clamp, the linear driving guide rail, the three-axis displacement table, the three-dimensional rotary table, the bearing table, the laser graticule, the laser cutting device, the lifting driving mechanism, the temperature sensor, the pressure sensor and the displacement sensor.
2. The laser stealth dicing apparatus for silicon wafers according to claim 1, characterized in that: the side surface of the workbench is in sliding connection with the inner surface of the side wall of the positioning base frame through a sliding chute, a bearing spring is arranged in the sliding chute, the bearing spring and the sliding chute are coaxially distributed, and two ends of the bearing spring are respectively and vertically connected with the bottom of the positioning base frame and the lower end surface of the workbench.
3. The laser stealth dicing apparatus for silicon wafers according to claim 1, characterized in that: the locating groove lower end face is connected with the linear driving guide rail in a sliding mode through the sliding block, the pressure sensor and the displacement sensor are connected with the sliding block, a plurality of through holes are evenly distributed in the bottom of the locating groove, the aperture of each through hole is not larger than 5 mm, the axis of each through hole is perpendicular to the bottom of the locating groove, and the total area of the through holes is 20% -60% of the surface area of the bottom of the locating groove.
4. The laser stealth dicing apparatus for silicon wafers according to claim 1, characterized in that: the locating groove under the heat pipe that terminal surface equipartition a plurality of and locating groove under the terminal surface parallel distribution, just semiconductor refrigeration mechanism is established to the workstation up end that the heat pipe corresponds, semiconductor refrigeration mechanism and drive circuit electrical connection.
5. The laser stealth dicing apparatus for silicon wafers according to claim 1, characterized in that: the laser cutting device is characterized in that the polarization ratio of laser beams is not less than 50:1, the wavelength is not less than 1000nm, the energy value is 0.1-100 muj, the width of the laser beams is not more than 10 nm, and the laser cutting device is any one of infrared laser, green laser and ultraviolet laser.
6. The laser stealth dicing apparatus for silicon wafers according to claim 1, characterized in that: the top of the positioning base frame is provided with at least one monitoring camera, the optical axis of the monitoring camera forms an included angle of 30-90 degrees with the upper end surface of the workbench and intersects with the middle point of the workbench, the side surface of the positioning base frame is provided with at least one exhaust fan, the exhaust fan is positioned above the workbench, the axial line of the exhaust fan forms an included angle of 0-60 degrees with the upper end surface of the workbench, and the monitoring camera and the exhaust fan are electrically connected with a driving circuit.
7. The laser stealth dicing apparatus for silicon wafers according to claim 1, characterized in that: the lifting driving mechanism is any one of an electric telescopic rod mechanism, a motor driving gear rack mechanism, a worm and gear mechanism and an electromagnetic telescopic rod mechanism.
8. The laser stealth dicing apparatus for silicon wafers according to claim 1, characterized in that: the driving circuit is a circuit system based on any one of a programmable controller and an internet-of-things controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021315170.6U CN212682829U (en) | 2020-07-07 | 2020-07-07 | Laser concealed cutting device for silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021315170.6U CN212682829U (en) | 2020-07-07 | 2020-07-07 | Laser concealed cutting device for silicon wafer |
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| CN212682829U true CN212682829U (en) | 2021-03-12 |
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| CN202021315170.6U Active CN212682829U (en) | 2020-07-07 | 2020-07-07 | Laser concealed cutting device for silicon wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113523546A (en) * | 2021-08-02 | 2021-10-22 | 江苏芯丰集成电路有限公司 | Laser marking system and method for integrated circuit |
| CN114453773A (en) * | 2022-04-12 | 2022-05-10 | 广州志橙半导体有限公司 | Laser cutting equipment for silicon carbide wafer |
-
2020
- 2020-07-07 CN CN202021315170.6U patent/CN212682829U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113523546A (en) * | 2021-08-02 | 2021-10-22 | 江苏芯丰集成电路有限公司 | Laser marking system and method for integrated circuit |
| CN113523546B (en) * | 2021-08-02 | 2022-03-25 | 江苏芯丰集成电路有限公司 | Laser marking system and method for integrated circuit |
| CN114453773A (en) * | 2022-04-12 | 2022-05-10 | 广州志橙半导体有限公司 | Laser cutting equipment for silicon carbide wafer |
| CN114453773B (en) * | 2022-04-12 | 2022-06-24 | 广州志橙半导体有限公司 | Laser cutting equipment for silicon carbide wafer |
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Address after: 214400, 1st to 2nd floors, Building 3, Xiakewan Chuangzhi Park, No. 215 Qingtong Road, Qingyang Town, Jiangyin City, Wuxi City, Jiangsu Province Patentee after: Jiangsu General Semiconductor Co.,Ltd. Country or region after: China Address before: Room a130-10, 1st floor, building 2, entrepreneurship center, No.96 Ruida Road, Zhengzhou high tech Industrial Development Zone, Henan Province, 450000 Patentee before: Henan general intelligent equipment Co.,Ltd. Country or region before: China |