CN212682809U - Laser equipment for wafer marking - Google Patents
Laser equipment for wafer marking Download PDFInfo
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- CN212682809U CN212682809U CN202021464082.2U CN202021464082U CN212682809U CN 212682809 U CN212682809 U CN 212682809U CN 202021464082 U CN202021464082 U CN 202021464082U CN 212682809 U CN212682809 U CN 212682809U
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Abstract
The utility model provides a laser equipment for wafer mark, include: a laser for emitting a laser beam; the beam expanding lens is used for expanding and collimating the laser beam; a beam adjusting unit for adjusting a direction of the laser beam; a mirror for changing the direction of the laser beam; the focusing lens is used for focusing the laser beam so as to enable the laser beam to be emitted vertically; the laser, the beam expander, the beam adjusting unit and the reflector are sequentially arranged in a first direction, the reflector, the focusing lens and the carrying platform are sequentially arranged in a second direction, and the first direction is perpendicular to the second direction. The utility model provides a laser equipment design for wafer mark is simple.
Description
Technical Field
The utility model relates to a laser technical field, in particular to laser equipment for wafer mark.
Background
In a semiconductor device manufacturing process, a semiconductor wafer is configured by dividing a surface of a wafer substrate having a substantially circular disk shape into a plurality of regions by planned dividing lines called blank streets arranged in a net shape, and forming devices such as ICs and LSIs in the divided regions. The semiconductor devices thus constructed are cut along the blank trenches to form individual devices.
Thousands or tens of thousands of chips are distributed on a semiconductor wafer, and in order to distinguish the chips by production lot, it is necessary to provide letters or symbols on the surface of each chip for marking each chip. In the prior art, a laser is generally used for marking a chip, and the cost of the existing laser is high, and the repair cost is high.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned drawbacks of the prior art, the present invention provides a laser device for wafer marking, which is simple in design and easy to manufacture.
To achieve the above objects and other objects, the present invention provides a laser apparatus for wafer marking, including:
a laser for emitting a laser beam;
the beam expanding lens is used for expanding and collimating the laser beam;
a beam adjusting unit for adjusting a direction of the laser beam;
a mirror for changing the direction of the laser beam;
the focusing lens is used for focusing the laser beam so as to enable the laser beam to be emitted vertically;
the laser, the beam expander, the light beam adjusting unit and the reflector are sequentially arranged in a first direction, the reflector, the focusing lens and the carrying platform are sequentially arranged in a second direction, and the first direction is vertical to the second direction;
further, still include the control unit and rotating assembly, the control unit is connected the rotating assembly.
Further, the beam adjusting unit is provided on the rotating assembly.
Further, the carrier includes a through hole, and the wafer is disposed on the through hole.
Further, the reflecting mirror is a plane reflecting mirror, and the reflectivity of the reflecting mirror to the laser beam is greater than 99.99%.
Further, an attenuator is included, the attenuator being located between the laser and the beam expander mirror.
Further, the wavelength of the laser beam is 540-560 nm.
Further, the beam adjusting unit comprises at least one optical wedge.
Further, the spot size of the laser beam is 50-100 μm.
Further, the focusing lens is a telecentric scanning lens.
To sum up, the utility model provides a laser equipment for wafer mark through set gradually on the first direction the laser instrument, the beam expander, the light beam regulating unit with the speculum to set gradually on the second direction the speculum, focusing lens with the microscope stage, consequently the laser beam of this laser instrument transmission can shine on the wafer, thereby realizes the mark to the wafer. The laser equipment is simple in design, convenient to work and easy to maintain.
Drawings
FIG. 1: a schematic diagram of a laser apparatus for wafer marking in this embodiment.
FIG. 2: a schematic of the rotating assembly and control unit.
FIG. 3: a schematic diagram of a beam conditioning unit.
FIG. 4: the position of the carrier and the wafer are shown schematically.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the invention in a schematic manner, and only the components related to the invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
As shown in fig. 1, the present embodiment proposes a laser apparatus 100, and the laser apparatus 100 can mark a wafer. The laser apparatus 100 includes a laser 101, a beam expander 102, a beam adjustment unit 103, a mirror 104, a focusing lens 105, and a stage 106. Among them, the laser 101, the beam expander 102, the beam adjusting unit 103, and the mirror 104 are arranged in order in the first direction. The mirror 104, the condenser lens 105, and the stage 106 are arranged in this order in a second direction, the first direction being perpendicular to the second direction, and therefore, the propagation direction of the laser beam L emitted from the laser 101 is changed from the first direction to the second direction after passing through the mirror 104. In some embodiments, an attenuator for attenuating the energy of the laser beam may also be provided between the laser 101 and the beam expander 102.
As shown in fig. 1, in the present embodiment, the laser 101 is used to emit a laser beam L that marks characters or symbols on a wafer. The laser beam L is, for example, a pulse wave laser beam, and the wavelength of the laser beam L is, for example, 300-500 nm. The laser beam L emitted by the laser 101 exits from the first direction. After being emitted from the laser 101, the laser beam L enters the beam expander 102, and the beam expander 102 expands and collimates the laser beam L.
As shown in fig. 1, in some embodiments, the laser 101 may oscillate laser beams having different wavelengths simultaneously by using one source. The laser 101 includes a laser generator (not shown) that generates a laser beam and a laser oscillator (not shown) that separates the generated laser beam to oscillate laser beams having different wavelengths. For example, in an exemplary embodiment of the present invention, three kinds of laser beams may be simultaneously oscillated by separating an Infrared (IR) laser beam (having a wavelength range of approximately 780nm or longer) into a visible laser beam (having a wavelength range of approximately 380nm to 780 nm) and an Ultraviolet (UV) laser beam (having a wavelength range of approximately 380nm or shorter). Therefore, laser beams having different wavelengths may be selectively used. The laser 101 is not limited thereto, but may include various laser sources. Further, the kind of the separated laser beam and the number of the oscillated laser beams are not limited thereto, but may be varied.
As shown in fig. 1-2, when the laser beam L enters the beam adjusting unit 103 after being expanded and collimated, the beam adjusting unit 103 may adjust the direction of the laser beam L. In this embodiment, the light beam adjusting unit 103 may be disposed on the rotating assembly 109, the rotating assembly 109 is electrically connected to the control unit 108, and the control unit 108 may control the rotation of the rotating assembly 109. In this embodiment, the rotating assembly 109 is, for example, a motor and a rotating platform mounted on an output shaft of the motor, and the beam adjusting unit 103 may be fixed on the rotating platform.
As shown in fig. 2, in the present embodiment, the beam adjusting unit 103 includes, for example, an optical wedge 1031, and adjusts the propagation direction of the laser beam L by rotating the optical wedge 1031. In this embodiment, the optical wedge 1031 can be a prism with a small apex angle (less than 1/10 radians), and when the laser beam L enters the optical wedge 1031 perpendicularly or nearly perpendicularly, the angle at which the laser beam L exits the optical wedge 1031 is slightly deflected; when the optical wedge 1031 is rotated, the emitting angle of the laser beam L is also deflected, so that when the propagation direction of the laser beam L needs to be adjusted, only the optical wedge 1031 needs to be rotated, the structure is simple, and the adjustment is convenient.
As shown in FIG. 3, in some embodiments, beam conditioning unit 103 includes a pair of first and second wedges 1032, 1033 arranged in an inverted configuration. When the first wedge 1032 and the second wedge 1033 are relatively rotated, the direction of the laser beam L emitted from the beam adjusting unit 103 is also changed, thereby achieving the purpose of adjusting the propagation direction of the laser beam L. In other embodiments, the number of wedges included in the beam adjusting unit 103 is not limited to the above number, and the user can set the wedges according to the requirement to flexibly control the deflection angle of the laser beam L. First wedge 1032 and second wedge 1033 are arranged at intervals in a front-back direction, the inclined surfaces of first wedge 1032 and second wedge 1033 are respectively arranged oppositely and flatly, and first wedge 1032 and second wedge 1033 are arranged in the propagation path of laser beam L, so that the first wedge 1032 and second wedge 1033 are arranged to make laser beam L have a certain offset in the direction perpendicular to the optical axis.
As shown in fig. 1, in the present embodiment, after the laser beam L passes through the beam adjusting unit 103, the laser beam L is reflected by the reflecting mirror 104, and after the laser beam L passes through the reflecting mirror 104, the propagation direction of the laser beam L is changed from the first direction to the second direction. In the present embodiment, the reflecting mirror 104 is a plane reflecting mirror for changing the propagation direction of the laser beam L. The surface of the reflector 104 is plated with a high-reflection film layer, when the laser beam L enters the reflector 104, the reflectivity of the reflector 104 to the laser beam L is up to more than 99.99%, and energy loss caused by refraction of the laser beam L is effectively avoided.
In some embodiments, the beam adjusting unit 103 may also be replaced with a scanner unit equipped with a plurality of scanners that adjust the propagation direction of the laser beam, and configured to provide the propagation path of the laser beam.
As shown in fig. 1, in the present embodiment, when the laser beam L changes the propagation direction at the mirror 104, the laser beam L is focused by the focus lens 105. After the laser beam L is focused by the focusing lens 105, the laser beam L emitted from the focusing lens 105 is vertically emitted and focused on the surface of the workpiece 200, so that the problem that the laser beam L is deflected too far to process and fails to process due to the fact that the focusing lens 105 introduces larger deflection to the deflected laser beam L is avoided. In the present embodiment, the focus lens 105 is, for example, a telecentric scan lens.
As shown in fig. 1 and 4, in the present embodiment, after the laser beam L passes through the focusing lens 105, the laser beam L is irradiated onto the wafer 1062 on the stage 106. In this embodiment, the carrier 106 includes a through hole 1061, and the through hole 1061 penetrates through the top and bottom surfaces of the carrier 106. Wafer 1062 is placed in through hole 1061 and the edge portion of wafer 1062 is in contact with carrier 106, i.e., the bulk portion of wafer 1062 is located in through hole 1061. In this embodiment, the wafer 1062 includes thousands or tens of thousands of chips on its surface. The laser beam L can mark a plurality of chips on the wafer 1062 through the through hole 1061.
As shown in fig. 1, in the present embodiment, the laser apparatus 100 can also be applied to various laser processing apparatuses, and the laser processing apparatuses mainly include a laser marking machine, a laser cutting machine, a laser welding machine, and other apparatuses. For example, when the laser apparatus 100 is applied to a laser marking machine, a workpiece is any one of metal, leather or plastic, and a laser beam L emitted by the laser apparatus 101 is irradiated on the surface of the workpiece while the laser beam L moves according to a set path, the laser beam L generates a high temperature on the surface of the workpiece and marks a pattern, a trademark or characters on the surface of the workpiece.
To sum up, the utility model provides a laser equipment for wafer mark through set gradually on the first direction the laser instrument, the beam expander, the light beam regulating unit with the speculum to set gradually on the second direction the speculum, focusing lens with the microscope stage, consequently the laser beam of this laser instrument transmission can shine on the wafer, thereby realizes the mark to the wafer. The laser equipment is simple in design, convenient to work and easy to maintain.
The above description is only a preferred embodiment of the present application and the explanation of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above technical features (but not limited to) having similar functions disclosed in the present application.
Besides the technical features described in the specification, other technical features are known to those skilled in the art, and further description of the other technical features is omitted here in order to highlight the innovative features of the present invention.
Claims (10)
1. A laser apparatus for marking a wafer, comprising:
a laser for emitting a laser beam;
the beam expanding lens is used for expanding and collimating the laser beam;
a beam adjusting unit for adjusting a direction of the laser beam;
a mirror for changing the direction of the laser beam;
the focusing lens is used for focusing the laser beam so as to enable the laser beam to be vertically emitted to the carrying platform;
the laser, the beam expander, the beam adjusting unit and the reflector are sequentially arranged in a first direction, the reflector, the focusing lens and the carrying platform are sequentially arranged in a second direction, and the first direction is perpendicular to the second direction.
2. The laser apparatus of claim 1, further comprising a control unit and a rotating assembly, the control unit being coupled to the rotating assembly.
3. The laser apparatus of claim 2, wherein the beam conditioning unit is disposed on the rotating assembly.
4. The laser apparatus of claim 1, wherein the carrier includes a through hole, and the wafer is disposed on the through hole.
5. The laser apparatus of claim 1, wherein the mirror is a planar mirror having a reflectivity of the laser beam of greater than 99.99%.
6. The laser device of claim 1, further comprising an attenuator positioned between the laser and the beam expander mirror.
7. The laser device as claimed in claim 1, wherein the laser beam has a wavelength of 540 and 560 nm.
8. The laser apparatus of claim 1, wherein the beam conditioning unit comprises at least one optical wedge.
9. Laser device as claimed in claim 1, characterized in that the spot size of the laser beam is between 50 and 100 μm.
10. The laser apparatus of claim 1, wherein the focusing lens is a telecentric scan lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021464082.2U CN212682809U (en) | 2020-07-22 | 2020-07-22 | Laser equipment for wafer marking |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021464082.2U CN212682809U (en) | 2020-07-22 | 2020-07-22 | Laser equipment for wafer marking |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212682809U true CN212682809U (en) | 2021-03-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021464082.2U Active CN212682809U (en) | 2020-07-22 | 2020-07-22 | Laser equipment for wafer marking |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212682809U (en) |
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2020
- 2020-07-22 CN CN202021464082.2U patent/CN212682809U/en active Active
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