CN212572960U - Sensor, microphone and electronic device - Google Patents

Sensor, microphone and electronic device Download PDF

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Publication number
CN212572960U
CN212572960U CN201890001434.5U CN201890001434U CN212572960U CN 212572960 U CN212572960 U CN 212572960U CN 201890001434 U CN201890001434 U CN 201890001434U CN 212572960 U CN212572960 U CN 212572960U
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Prior art keywords
sensor
transparent cover
substrate
disposed
acoustically transparent
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Chinese (zh)
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J·J·L·彼尔德
杜宇
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Knowles Electronics LLC
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Knowles Electronics LLC
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/005Electrostatic transducers using semiconductor materials
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/04Microphones
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003Mems transducers or their use

Abstract

The utility model relates to a sensor, microphone and electron device. A sensor device includes a substrate having a front surface and an opposing back surface. The base defines a bottom port extending between the front surface and the back surface. The sensor also includes a micro-electromechanical system (MEMS) transducer disposed over the substrate and over the bottom port and an Integrated Circuit (IC) disposed over the substrate. The sensor also includes an acoustically transparent cover disposed over the substrate, the acoustically transparent cover covering the MEMS transducer and the IC. The sound-transmitting cover is configured to provide high sound transmission rate.

Description

Sensor, microphone and electronic device
Cross Reference to Related Applications
This application claims priority to U.S. provisional patent application No.62/611,235, filed 2017, 12, month 28, the contents of which are incorporated herein by reference in their entirety.
Technical Field
The present disclosure relates generally to acoustic sensor devices and, more particularly, to acoustic sensor devices having high signal-to-noise ratios.
Background
In a micro-electro-mechanical system (MEMS) sensor, a MEMS chip includes at least one diaphragm and at least one backplate. The MEMS chip is supported by a base or substrate and is enclosed by a housing (e.g., a cover or lid with walls). The port may extend through the substrate (for a bottom port device) or through the top of the housing (for a top port device). Acoustic energy traverses the port, moving the diaphragm and causing a changing electrical potential of the backplate, which generates an electrical signal. Sensors are deployed in various types of devices, such as personal computers, cellular phones, mobile devices, headsets, and hearing aid devices.
SUMMERY OF THE UTILITY MODEL
Various embodiments disclosed herein relate to a sensor. In some embodiments, the sensor includes a substrate having a first surface and an opposing second surface, the substrate defining a bottom port extending between the first surface and the second surface. The sensor also includes a micro-electromechanical system (MEMS) transducer disposed on the substrate and above the bottom port. The sensor also includes an Integrated Circuit (IC) disposed on the substrate and an acoustically transparent cover covering the MEMS transducer and the IC.
In some embodiments, the sensor further comprises a cover disposed over the acoustically transparent coverThe conductive coating of (1). In some embodiments, the conductive coating has a thickness of about 10 μm to about 100 μm. In some embodiments, the sensor further comprises a ground interconnect disposed on the first surface, wherein the conductive coating is electrically connected to the ground interconnect. In some embodiments, the specific acoustic impedance of the acoustically transparent cover is less than 10,000RaylMKS. In some embodiments, the acoustically transparent cover comprises a mesh. In some embodiments, the mesh comprises an interwoven mesh of at least one of a metal, a polymer, or a composite. In some embodiments, the first surface defines a cavity, wherein the IC is at least partially disposed within the cavity. In some embodiments, the IC is stacked between the base and the MEMS transducer, and wherein the IC defines an opening aligned with the bottom port. In some embodiments, the substrate defines a cavity, the first surface forming a bottom of the cavity, wherein the IC is stacked between the first surface and the MEMS transducer, and wherein the IC defines an opening aligned with the bottom port.
Various embodiments disclosed herein relate to a microphone. The microphone includes a base having a first surface and an opposing second surface, the base defining a bottom port extending between the first surface and the second surface. The microphone also includes a microelectromechanical system (MEMS) acoustic transducer disposed on the substrate above the bottom port and configured to generate an electrical signal in response to the acoustic signal. The microphone also includes an Integrated Circuit (IC) disposed on the substrate. The microphone further includes an acoustically transparent cover covering the MEMS acoustic transducer and the IC, the acoustically transparent cover configured to transmit acoustic signals between a volume enclosed by the acoustically transparent cover and a volume external to the microphone.
In some embodiments, the microphone further comprises a conductive coating disposed on the acoustically transparent cover. In some embodiments, the conductive coating has a thickness of about 10 μm to about 100 μm. In some implementations, the microphone further includes a ground interconnect disposed on the first surface, wherein the conductive coating is electrically connected to the ground interconnect. In some embodiments, the specific acoustic impedance of the acoustically transparent cover is less than 10,000RaylMKS. In some embodiments, the acoustically transparent cover comprises a mesh. In some embodiments, the mesh comprises goldAn interwoven network of at least one of a metal, a polymer, or a composite. In some embodiments, the first surface defines a cavity, wherein the IC is at least partially disposed within the cavity. In some implementations, the IC is stacked between the substrate and the MEMS acoustic transducer, and wherein the IC defines an opening aligned with the bottom port.
Various embodiments disclosed herein relate to an electronic device. The electronic device includes a hermetic enclosure having an opening, the hermetic enclosure defining an enclosed volume. The electronic device also includes a substrate disposed in the enclosed volume. The electronic device also includes a sensor disposed on the substrate. The sensor includes a substrate having a first surface and an opposing second surface, the substrate defining a bottom port extending between the first surface and the second surface, the bottom port being disposed in alignment with an opening in the hermetic enclosure. The sensor also includes a micro-electromechanical system (MEMS) transducer disposed on the substrate and above the bottom port, the MEMS transducer separating the enclosed volume from the bottom port and the opening in the hermetic enclosure. The sensor also includes an Integrated Circuit (IC) disposed on the substrate. The sensor also includes an acoustically transparent cover covering the MEMS transducer and the IC.
In some embodiments, the electronic device further comprises a conductive coating disposed on the acoustically transparent cover. In some embodiments, the electronic device further comprises a ground interconnect disposed on the first surface, wherein the conductive coating is electrically connected to the ground interconnect. In some embodiments, the specific acoustic impedance of the acoustically transparent cover is less than 10,000RaylMKS. In some embodiments, the acoustically transparent cover comprises a mesh.
Drawings
The above features and other features of the present disclosure will become more fully apparent from the following description and appended claims, taken in conjunction with the accompanying drawings. Understanding that these drawings depict only several embodiments in accordance with the disclosure and are, therefore, not to be considered limiting of its scope, the disclosure will be described with additional specificity and detail through use of the accompanying drawings.
Fig. 1 illustrates a cross-sectional view of a first example sensor device, according to an embodiment of the present disclosure.
Fig. 2 illustrates a cross-sectional view of an electronic device including a sensor device according to an embodiment of the present disclosure.
Fig. 3 illustrates a cross-sectional view of a second example sensor device, according to an embodiment of the present disclosure.
Fig. 4 illustrates a cross-sectional view of a third example sensor device, according to an embodiment of this disclosure.
Fig. 5 illustrates a cross-sectional view of a fourth example sensor device, according to an embodiment of this disclosure.
Fig. 6 illustrates a cross-sectional view of a fifth example sensor device, according to an embodiment of this disclosure.
Fig. 7 illustrates an isometric view, partially cut away, of a sixth example sensor device, according to an embodiment of the present disclosure.
Fig. 8 shows a graph representing the relationship between acoustic self-noise and back volume of an acoustic transducer according to an embodiment of the present disclosure.
In the following detailed description, reference is made to the accompanying drawings, which form a part hereof. In the drawings, like numerals generally identify like components, unless context dictates otherwise. The illustrative embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be utilized, and other changes may be made, without departing from the spirit or scope of the subject matter presented here. It will be readily understood that the aspects of the present disclosure, as generally described herein, and illustrated in the figures, can be arranged, substituted, combined, and designed in a wide variety of different configurations, all of which are explicitly contemplated and form part of this disclosure.
Detailed Description
The present disclosure describes devices and techniques for providing a sensor package for a sensor device without a back volume. Sensor packages of the type discussed in this disclosure typically have a front volume and a back volume. The front volume may generally be defined as the volume between the input port of the sensor package and the transducer, and the back volume may generally be defined as the volume on the side of the transducer opposite the input port (e.g., generally the volume between the transducer and the cover of the sensor package). The SNR of the sensor varies in part with changes in the size or dimensions of the back volume. For example, the SNR of the sensor may be proportional to the size or dimensions of the back volume, and increasing the size of the back volume generally results in an increase in the SNR of the sensor. For example, fig. 8 shows a plot 800 of the magnitude of the acoustic self-noise of the sensor device over a range of frequencies for each of a plurality of back volume dimensions. As shown in fig. 8, the magnitude of the acoustic self-noise associated with the sensor device decreases as the size of the back volume of the sensor device increases over an exemplary frequency range of about 100Hz to about 5 kHz. In addition, although not shown in fig. 8, the sensitivity of the sensor device increases as the size or dimension of the back volume increases. The SNR of the sensor device varies with changes in acoustic self-noise, which may represent an electrical signal generated by the sensor when there is no input (e.g., when there is no acoustic input). In addition, the SNR changes inversely with the change in the sensitivity of the sensor device. Thus, as the size or size of the back volume increases, the acoustic self-noise decreases and the sensor sensitivity increases, which also manifests as a decrease in the SNR of the sensor with a corresponding increase in the size or size of the back volume.
In various implementations of the present disclosure, the sensor package is devoid of an airtight cover or can used in conventional sensor devices. Alternatively, the sensor package comprises an acoustically transparent cover for covering the transducer and circuitry of the sensor device, wherein the acoustically transparent cover may be substantially transparent to the acoustic energy. The back volume may be provided by a device housing within which the sensor device package is disposed. This allows for a relatively small sensor package without adversely affecting, and in some cases improving, the signal-to-noise ratio of the sensor device.
In one or more embodiments, a sensor device may include a substrate having a bottom port through which acoustic energy may enter the sensor device and be incident on a microelectromechanical system (MEMS) transducer. The sensor device may also include circuitry, such as one or more integrated circuits, disposed on the substrate. The acoustically transparent cover covers and provides protection for the MEMS transducer and circuitry. The acoustically transparent cover may be substantially transparent to acoustic energy. That is, the acoustically transparent cover may have a low acoustic impedance to acoustic energy incident on its surface. The acoustically transparent cover may also have a metal coating or layer that is electrically connected to a ground layer at the base to provide electrical shielding of the MEMS transducer.
In one or more embodiments, the MEMS transducer and circuitry can be coupled to the substrate using flip-chip technology. This may eliminate the need for bond wires for creating electrical connections between the MEMS transducer, circuitry and substrate. In one or more embodiments, the circuitry may be partially or fully embedded in the substrate. In one or more embodiments, the MEMS transducer and circuitry may be stacked over the substrate, thereby further reducing the package size of the sensor device. The acoustic port may include openings in the substrate and circuitry to allow acoustic energy to be incident on the MEMS transducer. In one or more embodiments, the MEMS transducer and circuitry may not only be stacked, but also partially or fully embedded in the matrix.
Fig. 1 illustrates a cross-sectional view of a first example sensor device 100, according to an embodiment of the present disclosure. The first example sensor device 100 includes a base 110, a micro-electromechanical system (MEMS) transducer 102, an Integrated Circuit (IC) 104, and an acoustically transparent cover 108. The substrate 110 includes a first surface ("front surface") 116 and an opposing second surface ("back surface") 114. The MEMS transducer 102 and the IC 104 are disposed on the front surface 116 of the substrate 110. A first set of wires 124 electrically connects the MEMS transducer 102 to the IC 104 and a second set of wires 126 connects the IC 104 to interconnects (not shown) on the front surface 116 of the substrate 110. The MEMS transducer 102, IC 104, and base 110 may each include a conductive bond pad to which an end of a wire may be bonded. In one or more embodiments, the first set of wires 124 and the second set of wires 126 may be bonded to appropriate bond pads using solder. Acoustically transparent cover 108 encloses MEMS transducer 102, IC 104, first set of wires 124, and second set of wires 125. Unlike conventional sensor devices that include a can or lid that provides a hermetically or air-tight sealed enclosure, acoustically transparent cover 108 is substantially transparent to acoustic energy.
The base 110 may include, without limitation, a printed circuit board, a semiconductor substrate, or a combination thereof. Base 110 defines a bottom port 132 extending between rear surface 114 and front surface 116. Bottom port 132 is positioned below MEMS transducer 102 and provides an acoustic channel between MEMS transducer 102 and the exterior of sensor device 100. The bottom port 132 may have a circular, elliptical, or polygonal (regular or irregular) shape in a plane parallel to the front surface 116. Front surface 116 may also include a conductive ground layer or interconnect that may form an electrical connection with acoustically transparent cover 108. In particular, the ground layer or interconnect can form an electrical connection with the conductive coating or layer 112 on the acoustically transparent cover 108. The ground layer, in combination with the conductive coating or layer 112 on the acoustically transparent cover 108, may form an electromagnetic barrier around the MEMS transducer 102, the IC 104, the first set of conductive lines 124, the second set of conductive lines 126, and any other electronic components enclosed by the acoustically transparent cover 108. In one or more embodiments, the electromagnetic shield may provide shielding for radio frequency signals.
The sensor device 100 may have a height H1Height H1Is defined as the distance between the rear surface 114 of the substrate 110 and the furthest extent of the acoustically transparent cover 108. In one or more embodiments, the height H1And may be about 0.4mm to about 0.8 mm. In one or more embodiments, the height H1May be less than about 0.6 mm.
In one or more embodiments, acoustically transparent cover 108 can allow acoustic energy to pass through without significant attenuation. In one or more embodiments, the acoustic transparency of acoustically transparent cover 108 can be high such that the specific acoustic impedance of acoustically transparent cover 108 is less than 10,000RaylMKS(N·s·m-3). For purposes of this disclosure, if the specific acoustic impedance of acoustically transparent cover 108 is less than 10,000RaylMKS(N·s·m-3) The material may be considered acoustically transparent and allow acoustic energy to pass through without significant attenuation.
In one or more embodiments, acoustically transparent cover 108 can include a mesh that allows sound to pass through while preventing contaminants, such as solid particles and liquids, from passing through. For example, the solid particles may include dust particles and flux particles. In some implementations, the mesh can include a metal screen with small openings. In some embodiments, the mesh may be formed from a netting, mesh, or interweaving of materials that may include, without limitation, metals, polymers (such as, for example, polyamides), composites, or combinations thereof. In some implementations, the mesh can include openings that can range in size from about 3 microns to about 30 microns in diameter. In one or more embodiments, the material used to form the web may have hydrophobic properties to prevent the passage of liquids. For example, the mesh may comprise a teflon or teflon-like material to impart hydrophobic properties. In one or more embodiments, a porous membrane may be utilized in place of or in addition to the mesh, wherein the membrane may have pores of a size similar to that discussed above with respect to the mesh. Additionally, the membrane may be made of materials similar to those discussed above with respect to the mesh. Acoustically transparent cover 108 may be attached to substrate 10 using a lamination process that conforms transparent cover 108 to the geometry of MEMS transducer 102 and IC 104. In one or more embodiments, acoustically transparent cover 108 can be attached to front surface 116 of base 110 by an adhesive or bonding material, such as glue, solder, epoxy, or the like. In one or more embodiments, acoustically transparent cover 108 can have a thickness of about 20 μm to about 200 μm.
In one or more embodiments, where acoustically transparent cover 108 is formed from a non-conductive material, acoustically transparent cover 108 can include a conductive coating or layer 112 to enhance Radio Frequency (RF) protection of the sensor device. The conductive coating or layer 112 may comprise a conductive material such as, for example, copper, aluminum, nickel, silver, gold, and other metals. In some cases where an electrically conductive material is used to form acoustically transparent cover 108, electrically conductive coating or layer 112 may not be needed. However, in some such cases, a conductive coating or layer 112 may still be included to improve the conductivity and RF shielding provided by acoustically transparent cover 108. In some cases, RF signals in the environment may interfere with MEMS 102 and IC 104. In particular, the RF signal may be coupled with one or more conductive elements in MEMS 102 and IC 104 to generate a noise signal that may be added to the electrical signal generated by MEMS 102 and IC 104. Conductive coating or layer 112 on acoustically transparent cover 108, in combination with a ground layer or interconnect on substrate 110, can reduce the magnitude of RF signals incident on MEMS 102 and IC 104, thereby reducing the magnitude of corresponding noise signals added to the electrical signals generated by MEMS 102 and IC 104. The reduction in noise signal magnitude, in turn, may improve the SNR of the sensor device 100. In all cases, the addition of conductive coating or layer 112 should not significantly change the acoustic transmission rate of acoustically transparent cover 108. The conductive coating or layer 112 may be provided as a separate metal mesh that is laminated on top of the acoustically transparent cover 108 or deposited directly on top of the acoustically transparent cover 108 using a process like sputtering and electroplating. In one or more embodiments, the conductive coating or layer 112 can have a thickness of about 10 μm to about 100 μm.
As described above, the bottom port 132 allows acoustic energy to be incident on the MEMS transducer 102. The MEMS transducer 102 may include a diaphragm 134 and a back plate 136 disposed in spaced apart relation. Both the diaphragm 134 and the backplate 136 may comprise a conductive material such that the combination of the diaphragm 134 and the backplate 136 forms a variable capacitor whose capacitance is based in part on the distance between the diaphragm 134 and the backplate 136. Acoustic energy incident on the diaphragm 134 may cause the diaphragm 134 to displace relative to the backplate 136, thereby causing a change in the capacitance of the variable capacitor. The change in capacitance may vary with changes in the frequency and magnitude of the incident acoustic energy. The MEMS transducer 102 may convert this change in capacitance into an electrical signal. The electrical signal may be provided to the IC 104, and the IC 104 processes the electrical signal to generate a sensor signal. IC 104 may include analog and digital circuits for performing processes such as, but not limited to, amplification, filtering, analog-to-digital conversion, digital-to-analog conversion, and level shifting.
In some implementations, the sensor device 100 can be used as a microphone device, where the sensor device 100 generates an electrical signal corresponding to an incident audible sound signal. In some implementations, sensor device 100 may also be used as a pressure sensor, where sensor device 100 generates an electrical signal in response to a pressure change. In some implementations, the sensor device 100 can also be used as an acoustic sensor, wherein the acoustic sensor generates an electrical signal in response to incident acoustic energy at any level and in any frequency range (such as ultrasonic, subsonic, etc.).
Fig. 2 shows a cross-sectional view of an electronic device 200 including a sensor 214. In particular, the electronic device 200 may include any electronic device that provides a hermetic enclosure 202. For example, the electronic device 200 may be, without limitation: consumer devices such as smart phones, tablets, computers, smart watches, microphones, and the like; or a measuring device such as an electronic barometer, a sound meter, etc. The electronic device 200 may include a housing 202, the housing 202 covering and protecting various components of the electronic device 200. The housing may include a first portion 204 attached to a second portion 206. The first portion 204 and the second portion 206 may be formed using one or more materials, such as plastic, metal, composite, polymer, and the like. First portion 204 and second portion 206 are sealed with seal 208 to form hermetically sealed volume 216. The seal 208 may include one or more of an adhesive, a gasket, an epoxy, which may be used in combination to form the hermetic enclosure 202. In one or more embodiments, the enclosure 202 may be configured to provide a sealed, enclosed volume 216 at or above the International Electrotechnical Commission (IEC) IP67 rating. The housing 202 may enclose various components such as a display 218, a substrate or printed circuit board 210, various electronic components 212, and a sensor 214. The sensor 214 may be implemented using, for example, the first example sensor device 100 discussed above with respect to fig. 1. The housing 202 may include a port 220, the port 220 being positioned to allow incident pressure changes to be transmitted to a diaphragm of the sensor 214 (such as, for example, the diaphragm 134 of the sensor apparatus 100 shown in fig. 1). Port 220 may be formed by aligned openings in second portion 206 and substrate 210. The sensor 214 may be disposed on the substrate 210 and over the port 210 such that the sensor seals the port 220 and separates or isolates the port 220 from the enclosed volume 216. In particular, the diaphragm of the sensor 214 separates or isolates the sealed enclosed volume 216 (which serves as a back volume) from the port 220, the port 220 being open to the external environment. This allows the enclosed volume 216 to remain airtight while allowing the diaphragm of the sensor 214 to respond to pressure changes transmitted through the port 220.
Similar to sensor device 100, sensor 214 does not include an airtight cover or can. Alternatively, sensor 214 includes an acoustically transparent cover, such as the acoustically transparent cover shown in FIG. 1. Alternatively, a hermetically sealed back volume of the sensor 214 is provided by the enclosed volume 216 of the electronic device 200. The presence of the enclosed volume 216 within the electronic device 200 alleviates the need for an airtight cover or can that only covers the components of the sensor 214. The enclosed volume 216 serves as the back volume of the MEMS transducer of the sensor 214. The size of the sensor 214 can be reduced by the absence of an airtight cover or can over the sensor 214. In particular, the height of the sensor 214 may be relatively less than the height of a sensor employing an airtight cover or can. As a result, the sensor 214 may meet the ever-decreasing profile specifications of sensors used in electronic devices.
Furthermore, using the enclosed volume 216 of the electronic device 200 as the back volume of the sensor 214 may improve the SNR of the sensor 214 compared to the SNR of a sensor that includes an airtight cover or can. The SNR of the sensor 214 varies in part with changes in the size or dimensions of the back volume. For example, the SNR of the sensor 214 may be proportional to the size or dimensions of the back volume. That is, increasing the size or dimension of the back volume may desirably result in an increase in the SNR of the sensor 214 (e.g., as discussed above with respect to fig. 8). In one or more embodiments, the enclosed volume 216 of the electronic device 200 may provide a relatively larger back volume than the volume provided by the airtight cover or canister of conventional sensor devices. Thus, the SNR of the sensor 214 utilizing the enclosed volume 216 of the electronic device 200 may have a greater SNR than conventional sensor devices that use a hermetic cover or can to provide the back volume.
Fig. 3 shows a cross-sectional view of a second example sensor apparatus 300. Where certain components of the second example sensor apparatus 300 are similar to components of the first example sensor apparatus 100 shown in fig. 1, these components are labeled with similar reference numbers. The second example sensor device 300 does not include the first set of wires 124 and the second set of wires 126 included in the first example sensor device 100 shown in fig. 1. Alternatively, the second example sensor apparatus 300 forms electrical connections between the MEMS transducer 102, the IC 104, and the base 110 using interconnects (not shown) disposed on the front surface 116 of the substrate. In particular, interconnects on the MEMS transducer 102 and on the IC 104 are soldered (using solder 302) to interconnects on the front surface 116 of the substrate 110. The interconnects on the front surface 116 of the substrate 110 may be configured to provide the desired electrical connections between the MEMS transducer 102, the IC 104, the substrate 110, and any other components of the second example sensor apparatus 300. The interconnects on the substrate 110 may alleviate the need for bond wires, such as the first set of bond wires 124 and the second set of bond wires 126 shown in fig. 1.
Mitigating the need for bond wires may allow for further reductions in the size of the sensor package. For example, the height H of the first example sensor device 100 shown in FIG. 11Resulting in a certain amount of clearance between the first set of bond wires 124, the second set of bond wires 126, and the acoustically transparent cover 108. This gap is needed to avoid electrical contact between the first set of bond wires 124 and the second set of bond wires 126 and the acoustically transparent cover 108. In the second example sensor apparatus 300, no gap is required between the acoustically transparent cover 108 and the underlying components because no bond wires are present. Accordingly, acoustically transparent cover 108 may be disposed relatively closer to MEMS transducer 102 and IC 104. In one or more implementations, acoustically transparent cover 108 can conform to the exposed surfaces of MEMS transducer 102 and IC 104. Resulting height H of second example sensor apparatus 3002May be less than the height H of the first example sensor device 1001. In one or more embodiments, the height H2And may be about 0.3mm to about 0.6 mm.
The second example sensor apparatus 300 may be used to implement the sensor 214 of the electronic apparatus 200 shown in fig. 2. The second example sensor apparatus 300 reduces the size of the releasable electronic apparatus 200 relative to the first example sensor apparatus 100, which may be utilized to include additional components within the electronic apparatus 200, allow the overall size of the electronic apparatus 200 to be reduced, or allow the enclosed volume 216 in the electronic apparatus 200 to be larger (and thus, larger back volume).
Fig. 4 shows a cross-sectional view of a third example sensor device 400. Certain components in the third example sensor apparatus 400 are similar to those in the third example shown in FIG. 3Where components of the two example sensor apparatus 300 are similar, those components are labeled with similar reference numerals. The third example sensor device 400 shown in fig. 4 differs from the second example sensor device 300 shown in fig. 3 in that the base 410 of the third example sensor device 400 defines a cavity 418 in the front surface 416. The cavity 418 is positioned between the front surface 416 and the back surface 414 of the substrate 410. IC 104 is at least partially embedded in cavity 418. In one or more embodiments, the depth of cavity 418 may be equal to or greater than the thickness of IC 104. In one or more embodiments, the depth of cavity 418 may be less than the thickness of IC 104. The inclusion of the IC 104 in the cavity 418 may result in the third example sensor device 400 having a relatively small size compared to the size of the first and second example sensors 100, 300 shown in fig. 1 and 3. In one or more embodiments, the third example sensor device 400 can be used to implement the sensor 214 of the electronic device 200 shown in fig. 2. The smaller size of the third example sensor device 400 may free up valuable space within the electronic device 200 that may be utilized to incorporate additional components within the electronic device 200, allow the overall size of the electronic device 200 to be reduced, or allow the enclosed volume 216 within the electronic device 200 to be larger (and thus, larger back volume). Additionally, the inclusion of IC 104 into cavity 418 effectively embeds IC 104 within base 410, which may also increase the RF shielding of sensor device 400. In one or more embodiments, the height H3And may be about 0.3mm to about 0.6 mm. Furthermore, in the third example sensor device 400, because the IC 104 is at least partially embedded in the base 410, the length or width, or both, dimensions of the third example sensor device 400 may also be made smaller than the first and second example sensors 100, 300 shown in fig. 1 and 3.
Fig. 5 illustrates a cross-sectional view of a fourth example sensor arrangement 500. The fourth example sensor device 500 includes a base 110 defining a bottom port 132. The IC 504 is disposed on the front surface 116 of the substrate 110. The IC 504 may be soldered (using solder 534) to interconnects (not shown) on the front surface 116 to provide electrical connections between the IC 504 and the substrate 110. The IC 504 defines an opening 532 that is substantially aligned with the bottom port 132. For example, in one or more embodiments, a longitudinal axis of the bottom port 132 may be substantially aligned with a longitudinal axis of the opening 532 in the IC 504. The opening 532 allows acoustic energy entering from the bottom port 132 to be incident on the MEMS transducer 102. The MEMS transducer 102 may be disposed on top of the IC 504 such that the IC 504 is located between the MEMS transducer 102 and the substrate 110. The IC 504 may include interconnects on a surface of the IC 504 facing the MEMS transducer 102. Solder 536 may connect interconnects on the MEMS transducer 102 to interconnects on the IC 504 to provide electrical connections between the MEMS transducer 102 and the IC 504. In addition, acoustically transparent cover 108 is disposed over MEMS transducer 102 and extends along the sides of MEMS transducer 102 and IC 504 to contact front surface 116 of substrate 110. A conductive coating or layer 112 is disposed over acoustically transparent cover 108 to electrically connect acoustically transparent cover 108 to a ground plane on substrate 110.
The stacking of the IC 504 and the MEMS transducer 102 over the substrate 110 may result in a package size of the fourth example sensor device 500 that is smaller than the package sizes of the first, third, and fourth example sensor devices 100, 300, and 400 described above with respect to fig. 1, 3, and 4, respectively. In one or more embodiments, the fourth example sensor device 500 may be used to implement the sensor 214 of the electronic device 200 discussed above with respect to fig. 2. The smaller package size may free up valuable space within the electronic device 200 that may be utilized to incorporate additional components into the electronic device 200, allow the overall size of the electronic device 200 to be reduced, or allow the enclosed volume 216 within the electronic device 200 to be larger (and thus, larger back volume). In one or more embodiments, the height H4And may be about 0.4mm to about 0.8 mm.
Fig. 6 illustrates a cross-sectional view of a fifth example sensor apparatus 600. The fifth example sensor device 600 is similar to the fourth example sensor device 500 discussed above with respect to fig. 5 in that the IC 504 and the MEMS transducer 102 are stacked on one another. However, unlike the fourth example sensor arrangement 500, in which the IC 504 is disposed on the front surface 116 of the substrate 110, the IC 504 in the fifth example sensor arrangement 600 is instead disposed within the cavity 650 defined by the substrate 610. The substrate 610 defines a cavity 650 between the front surface 616 and the recessed surface 618. The IC 504 is soldered (using solder 634) to interconnects (not shown) on the recessed surface 618 of the substrate 610. The MEMS transducer 102 is soldered (using solder 636) to interconnects (not shown) on the surface of the IC 504 facing the MEMS transducer 102. An acoustically transparent cover 108 is disposed over the MEMS transducer 102 and extends between the sidewalls of the cavity 650. The sidewalls of base 610 may include interconnects that may electrically connect acoustically transparent cover 108 to a ground plane. In one or more embodiments, the sidewalls of cavity 650 may be coated with a conductive material, such as a metal, that is in electrical contact with the ground layer on recessed surface 618 and acoustically transparent cover 108. The acoustically transparent cover 108, conductive sidewalls, and ground layer on the recessed surface 618 may form a shielded enclosure to electromagnetically shield the IC 504 and MEMS transducer 102. In one or more embodiments, acoustically transparent cover 108 can extend over cavity 650 such that it is in contact with interconnects on front surface 616 of substrate 610.
By disposing the IC 504 and MEMS transducer 102 within the cavity 650 of the substrate 610, the height of the fifth example sensor apparatus 600 may be reduced. For example, the height of the fifth example sensor apparatus 600 may be less than the height of the fourth example sensor apparatus 500 discussed above with respect to fig. 5. In one or more embodiments, the fifth example sensor device 600 may be used to implement the sensor 214 of the electronic device 200 discussed above with respect to fig. 2. The smaller package size of the fifth example sensor device 600 may free up valuable space within the electronic device 200 that may be utilized to incorporate additional components within the electronic device 200, allow the overall size of the electronic device 200 to be reduced, or allow the enclosed volume 216 within the electronic device 200 to be larger (and thus, larger back volume). In one or more embodiments, the height H5And may be about 0.3mm to about 0.6 mm. Fig. 7 illustrates an isometric view of a computer-aided design illustration of a fifth example sensor apparatus 600, according to an example implementation.
Some embodiments of the present disclosure relate to a sensor, comprising: a base having a first surface and an opposing second surface, the base defining a bottom port extending between the first surface and the second surface; a micro-electro-mechanical system (MEMS) transducer disposed on the substrate and above the bottom port; an Integrated Circuit (IC) disposed on the substrate; and an acoustically transparent cover covering the MEMS transducer and the IC.
Some embodiments relate to a microphone, the microphone comprising: a base having a first surface and an opposing second surface, the base defining a bottom port extending between the first surface and the second surface; a microelectromechanical system (MEMS) acoustic transducer disposed on the substrate above the bottom port and configured to generate an electrical signal in response to the acoustic signal; an Integrated Circuit (IC) disposed on the substrate; and an acoustically transparent cover covering the MEMS acoustic transducer and the IC, the acoustically transparent cover configured to transmit acoustic signals between the volume enclosed by the acoustically transparent cover and a volume external to the microphone.
Some embodiments relate to an electronic device, comprising: a gas-tight enclosure defining an enclosed volume; a substrate disposed in the enclosed volume; and a sensor disposed on the substrate. The sensor includes: a base having a first surface and a second surface, the base defining a bottom port extending between the first surface and the second surface; a micro-electro-mechanical system (MEMS) transducer disposed on the substrate and above the bottom port; an Integrated Circuit (IC) disposed on the substrate; and an acoustically transparent cover covering the MEMS transducer and the IC.
The subject matter described herein sometimes illustrates different components contained within, or connected with, different other components. It is to be understood that the architectures depicted are exemplary, and that in fact many other architectures can be implemented which achieve the same functionality. In a conceptual sense, any arrangement of components to achieve the same functionality is effectively "associated" such that the desired functionality is achieved. Hence, any two components herein combined to achieve a particular functionality can be seen as "associated with" each other such that the desired functionality is achieved, irrespective of architectures or intermedial components. Likewise, any two components so associated can also be viewed as being "operably connected," or "operably coupled," to each other to achieve the desired functionality, and any two components capable of being so associated can also be viewed as being "operably couplable," to each other to achieve the desired functionality. Particular examples of operable couplings include, but are not limited to, physically mateable and/or physically interacting components and/or wirelessly interactable and/or wirelessly interacting components and/or logically interacting and/or logically interactable components.
With respect to the use of plural and/or singular terms herein, those having skill in the art may translate from the plural to the singular and/or from the singular to the plural as is appropriate to the context and/or application. Various singular/plural permutations may be expressly set forth herein for the sake of clarity.
It will be understood by those within the art that, in general, terms described herein, and especially in the appended claims (e.g., bodies of the appended claims) are generally intended as "open" terms (e.g., the term "including" should be interpreted as "including but not limited to," the term "having" should be interpreted as "having at least," the term "includes" should be interpreted as "includes but is not limited to," etc.).
It will be further understood by those within the art that if a specific number of an introduced claim recitation is intended, such an intent will be explicitly recited in the claim, and in the absence of such recitation no such intent is present. For example, as an aid to understanding, the following appended claims may contain usage of the introductory phrases "at least one" and "one or more" to introduce claim recitations. However, the use of such phrases should not be construed to imply that the introduction of a claim recitation by the indefinite articles "a" or "an" limits any particular claim containing such introduced claim recitation to inventions containing only one such recitation, even when the claim includes the introductory phrases "one or more" or "at least one" and indefinite articles such as "a" or "an," e.g., "a" and/or "an" should be interpreted to mean "at least one" and "one or more," the same applies to the use of definite articles used to introduce claim recitations. In addition, even if a specific number of an introduced claim recitation is explicitly recited, those skilled in the art will recognize that such recitation should typically be interpreted to mean at least the recited number (e.g., the bare recitation of "two recitations," without other modifiers, typically means at least two recitations, or two or more recitations).
Further, in those instances where a convention analogous to "at least one of A, B and C, etc." is used, in general such a construction is intended to have the meaning that one skilled in the art would understand convention (e.g., "a system having at least one of A, B and C" would include but not be limited to having a single a, a single B, a single C, A and B together, a and C together, B and C together, and/or A, B and C together, etc.). In those instances where a convention analogous to "A, B or at least one of C, etc." is used, in general, such a construction is intended to have the meaning that one skilled in the art would understand the convention (e.g., "a system having at least one of A, B or C" would include but not be limited to having a single a, a single B, a single C, A and B together, a and C together, B and C together, and/or A, B and C together, etc.). It will be further understood by those within the art that virtually any conjunctive word and/or phrase presenting two or more alternative terms, whether in the specification, claims, or drawings, should be understood to contemplate the possibilities of including one of the terms, either of the terms, or both terms. For example, the phrase "a or B" will be understood to include the possibility of "a" or "B" or "a and B". Additionally, unless otherwise specified, the use of the words "approximately", "about", "approximately", "substantially", etc. means plus or minus ten percent.
The foregoing description of the exemplary embodiments has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to be limited to the precise forms disclosed, and modifications and variations are possible in light of the above teachings or may be acquired from practice of the disclosed embodiments. It is intended that the scope of the invention be defined by the following claims and their equivalents.

Claims (22)

1. A sensor, comprising:
a base having a first surface and an opposing second surface, the base defining a bottom port extending between the first surface and the second surface;
a MEMS transducer disposed on the substrate above the bottom port;
an Integrated Circuit (IC) disposed on the substrate;
an acoustically transparent cover covering the MEMS transducer and the IC; and
a conductive coating disposed on the acoustically transparent cover.
2. The sensor of claim 1, wherein the conductive coating has a thickness of 10 μm to 100 μm.
3. The sensor of claim 1, further comprising a ground interconnect disposed on the first surface, wherein the conductive coating is electrically connected to the ground interconnect.
4. The sensor of claim 1, wherein the specific acoustic impedance of the acoustically transparent cover is less than 10,000RaylMKS
5. The sensor of claim 1, wherein the acoustically transparent cover comprises a mesh.
6. The sensor of claim 5, wherein the mesh comprises an interwoven mesh of one of a metal, a polymer, and a composite.
7. The sensor of claim 1, wherein the first surface defines a cavity, wherein the IC is at least partially disposed within the cavity.
8. The sensor of claim 1, wherein the IC is stacked between the substrate and the MEMS transducer, and wherein the IC defines an opening aligned with the bottom port.
9. The sensor of claim 1, wherein the substrate defines a cavity, the first surface forming a bottom of the cavity, wherein the IC is stacked between the first surface and the MEMS transducer, and wherein the IC defines an opening aligned with the bottom port.
10. A microphone, comprising:
a base having a first surface and an opposing second surface, the base defining a bottom port extending between the first surface and the second surface;
a microelectromechanical system (MEMS) acoustic transducer disposed on the substrate above the bottom port and configured to generate an electrical signal in response to an acoustic signal;
an Integrated Circuit (IC) disposed on the substrate;
an acoustically transparent cover covering the MEMS transducer and the IC, the acoustically transparent cover configured to transmit acoustic signals between a volume enclosed by the acoustically transparent cover and a volume external to the microphone; and
a conductive coating disposed on the acoustically transparent cover.
11. The microphone of claim 10, wherein the conductive coating has a thickness of 10 μ ι η to 100 μ ι η.
12. The microphone of claim 10, further comprising a ground interconnect disposed on the first surface, wherein the conductive coating is electrically connected to the ground interconnect.
13. The microphone of claim 10, wherein the sound-transparent cover has a specific acoustic impedance of less than 10,000RaylMKS
14. The microphone of claim 10, wherein the acoustically transparent cover comprises a mesh.
15. The microphone of claim 14, wherein the mesh comprises an interwoven mesh of one of a metal, a polymer, and a composite.
16. The microphone of claim 10, wherein the first surface defines a cavity, wherein the IC is at least partially disposed within the cavity.
17. The microphone of claim 10, wherein the IC is stacked between the substrate and the MEMS acoustic transducer, and wherein the IC defines an opening aligned with the bottom port.
18. The microphone of claim 10, wherein the substrate defines a cavity, the first surface forming a bottom of the cavity, wherein the IC is stacked between the first surface and the MEMS acoustic transducer, and wherein the IC defines an opening aligned with the bottom port.
19. An electronic device, comprising:
an airtight enclosure having an opening, the airtight enclosure defining an enclosed volume;
a substrate disposed in the enclosed volume; and
a sensor disposed on the substrate, the sensor comprising:
a base having a first surface and a second surface, the base defining a bottom port extending between the first surface and the second surface, the bottom port being disposed in alignment with an opening in the hermetic enclosure;
a MEMS transducer disposed on the substrate above the bottom port, the MEMS transducer separating the enclosed volume from the bottom port and the opening in the hermetic enclosure;
an Integrated Circuit (IC) disposed on the substrate;
an acoustically transparent cover covering the MEMS transducer and the IC; and
a conductive coating disposed on the acoustically transparent cover.
20. The electronic device of claim 19, further comprising a ground interconnect disposed on the first surface, wherein the conductive coating is electrically connected to the ground interconnect.
21. The electronic device of claim 19, wherein the specific acoustic impedance of the acoustically transparent cover is less than 10,000RaylMKS
22. The electronic device of claim 19, wherein the acoustically transparent cover comprises a mesh.
CN201890001434.5U 2017-12-28 2018-12-26 Sensor, microphone and electronic device Active CN212572960U (en)

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CN213818100U (en) * 2019-12-30 2021-07-27 楼氏电子(苏州)有限公司 Microphone assembly
JP7396071B2 (en) 2020-01-23 2023-12-12 セイコーエプソン株式会社 ultrasound device
US11711653B2 (en) 2021-05-11 2023-07-25 xMEMS Labs, Inc. Sound producing cell and manufacturing method thereof

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