CN212515114U - Optical filter for 5G optical communication and 5G optical communication module - Google Patents
Optical filter for 5G optical communication and 5G optical communication module Download PDFInfo
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- CN212515114U CN212515114U CN202021492971.XU CN202021492971U CN212515114U CN 212515114 U CN212515114 U CN 212515114U CN 202021492971 U CN202021492971 U CN 202021492971U CN 212515114 U CN212515114 U CN 212515114U
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Abstract
The utility model discloses an optical filter, 5G optical communication module for 5G optical communication, wherein the optical filter includes the glass substrate, is equipped with high reflection coating in the one side of glass substrate, is equipped with the antireflection coating at the another side of glass substrate, high reflection coating carry out N times circulation by one deck high reflection medium and one deck low reflection medium as a circulation cycle and pile up and form, wherein N positive integer, the antireflection coating carry out M times circulation by one deck high reflection medium and one deck low reflection medium as a circulation cycle and pile up and form, wherein M is positive integer. The light filter has improved the rectangle degree index of light filter, makes the light filter have high performance, the characteristics of small volume can provide a low-cost solution for 5G optical communication module.
Description
Technical Field
The utility model relates to an optical filter technical field, more specifically relates to an optical filter, 5G optical communication module for 5G optical communication.
Background
With the development of communication Technology, 5G communication (the if th generation Mo bioleaching Technology, fifth generation mobile communication Technology) has emerged. The receiving end and the transmitting end of the 25Gbps single-fiber bidirectional optical module applied to the 5G wireless fronthaul respectively adopt a DFB (Distributed feedback laser) and a PIN receiver (photodiode receiver), the wavelengths of the DFB and the PIN receiver are respectively 1270nm (nanometer) of the transmitting end and 1330nm of the receiving end, and 1330nm of the transmitting end and the receiving end are 1270nm of the transmitting end, and the DFB and the PIN receiver are used in combination, so that the 5G wireless fronthaul signal is received and transmitted.
In an optical communication module, a configuration capable of separating these lights from each other is required for the optical signals. In an optical communication module for performing bidirectional communication, as an optical communication module having a structure capable of separating light of a plurality of wavelengths,
in the conventional technique, specifically, when the light receiving part and the light emitting part are arranged coaxially with the end face of the optical fiber and in a direction perpendicular thereto, respectively, a wavelength branching filter is provided at a position where optical axes of the light receiving part and the light emitting part intersect, and the light is branched. The wavelength branching filter needs to be a wavelength branching filter as follows: the optical axis is arranged to be at an angle of 45 DEG, and the optical axis transmits light in a wavelength band of 1310nm and reflects light in wavelength bands of 1490nm and 1650 nm.
However, the combination of SiO2 and Ta2O5, which is used as a material for a general multilayer film filter, cannot include a range of 1490nm to 1650nm at a time. Therefore, it is conceivable to provide a filter that reflects only light in a wavelength band of 1650nm on the light transmitting side of the wavelength division filter so that light in the wavelength band of 1650nm does not enter the light receiving unit that receives light in the wavelength band of 1310 nm. However, in this case, since the number of components increases, it is necessary to perform alignment, which increases the cost.
It is also conceivable to widen the wavelength range of the reflected light by changing the film material. That is, it is conceivable to use Nb2O5 or TiO2 having a higher refractive index than Ta2O 5. However, the wavelength division filter can be manufactured at low cost by fixing the wavelength division filter in the optical communication module with a UV adhesive, but these materials cannot use a UV adhesive, and thus other fixing methods are required, which also increases the cost.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a solve the problem that prior art 5G optical communication module cost of manufacture is high, provide a light filter, 5G optical communication module for 5G optical communication, it can reduce the requirement to the laser instrument through the light filter to can reduce 5G optical communication module's low cost.
In order to realize the above, the utility model discloses the purpose, the technical scheme of adoption as follows: the optical filter for 5G optical communication comprises a glass substrate, wherein a high-reflection film is arranged on one surface of the glass substrate, an antireflection film is arranged on the other surface of the glass substrate, the high-reflection film is formed by performing cyclic stacking on a layer of high-reflection medium and a layer of low-reflection medium for N times as a cyclic period, wherein N is a positive integer, the antireflection film is formed by performing cyclic stacking on a layer of high-reflection medium and a layer of low-reflection medium for M times as a cyclic period, and M is a positive integer.
Based on above be used for 5G optical communication's light filter, the utility model discloses still provide a 5G optical communication module, include as above the light filter that is used for 5G optical communication.
The utility model has the advantages as follows:
the light filter improve the rectangle degree index of light filter, the optical index of light filter as follows: t @ 1297-1340 > 93%, and T @ 1250-1283 < 10%, wherein T represents transmittance, the optical filter has the characteristics of high performance and small volume, and the requirements on a laser can be reduced by arranging the optical filter on the 5G optical communication module, so that a low-cost solution can be provided for the 5G optical communication module.
Drawings
Fig. 1 is a schematic structural diagram of the optical filter described in embodiment 1.
FIG. 2 is a schematic diagram of the film layer stacking of the high reflection film and the antireflection film described in example 1.
In the figure, G is a glass substrate, 2 is a high reflection film, 3 is an antireflection film, A is air, H is a high refractive index medium, and L is a low refractive index medium.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
Example 1
The index requirements of the designed optical filter in this embodiment are shown in table 1:
TABLE 1
| Parameter(s) | Unit of | Technical index |
| Wavelength of operation | nm | 1260～1350 |
| Angle of incidence | degree | 44±0.1 |
| Polarization of | NA | P |
| Pass band | nm | 1297～1340 |
| Cut-off pass band | nm | 1250～1283 |
| Transmittance of light | ％ | ≥93 |
| Degree of isolation | ％ | ＜10 |
| Antireflection film | R@1290～1345 | ＜0.5％ |
| Inch and size | mm | L*W±0.05 |
| Thickness of | mm | H±0.05 |
| Appearance requirements | mm | 40/20 |
| Operating temperature | ℃ | -40～85 |
| Storage temperature | ℃ | -40～85 |
| Material | NA | D263T |
| Coating material | NA | Ta2o5/Sio2 |
According to the above index requirements, the specific structure of the optical filter for 5G optical communication provided in this embodiment includes a glass substrate G, a high reflection film 2 is disposed on one surface of the glass substrate G, and an anti-reflection film 3 is disposed on the other surface of the glass substrate G, the high reflection film 2 is formed by performing cyclic stacking N times with a layer of high reflection medium H and a layer of low reflection medium L as a cycle period, where N is a positive integer, and the anti-reflection film 3 is formed by performing cyclic stacking M times with a layer of high reflection medium and a layer of low reflection medium L as a cycle period, where M is a positive integer.
In a specific embodiment, the optical filter is selected by the material, thickness and serial connection mode of the film layers, and the high-reflection film realizes the performance of the optical path refraction and the optical filter by optimizing a non-regular film system (the thickness of each film layer is different); the series connection mode is that the film layers of the film coating are designed according to film stacks, and the film layers are formed by stringing the film stacks together in the series connection mode. The specific structural design of the high-reflection film 2 is as follows: the high-reflection film 2 is formed by circularly stacking a layer of high-reflection medium H and a layer of low-reflection medium L for 40 times in one period. The high-reflection medium H is made of tantalum pentoxide, and the chemical formula of the high-reflection medium H is TA2O 5. The low-reflection medium L is made of silicon dioxide, and the chemical formula of the low-reflection medium L is SIO 2.
As shown in fig. 2, a schematic diagram of film layer stacking of the high reflection film 2 and the antireflection film 3 is shown. The film layer structure of the high-reflection film 2 is shown in table 2:
TABLE 2
The high reflection film described in this embodiment adopts an irregular structure design, that is, the thickness of the high reflection medium H and the thickness of the low reflection medium L set in different cycle periods of the high reflection film 2 are different, so that the film system is depolarized, the rectangularity of the product can be improved under the incidence of a large angle, and the light splitting performance of the product can be improved.
In a specific embodiment, the antireflection coating 3 is formed by performing M-2 times of cyclic stacking on a layer of high-reflection medium and a layer of low-reflection medium as a period. The high-reflection medium is made of tantalum pentoxide, and the chemical formula of the high-reflection medium is TA2O 5. The low-reflection medium is made of silicon dioxide, and the chemical formula of the low-reflection medium is SIO 2.
Specifically, the antireflection film also adopts a non-regular structure design, and the film layer structure of the antireflection film 3 is shown in table 3:
TABLE 3
In order to improve the transmittance of the product, the antireflection film 3 is plated on one surface of the optical filter, so that the reflectivity of the glass substrate G can be effectively reduced.
Example 2
Based on the optical filter for 5G optical communication described in embodiment 1, this embodiment provides a 5G optical communication module, which includes an optical filter for 5G optical communication, where the optical filter includes a glass substrate G, a high-reflection film 2 is disposed on one surface of the glass substrate G, an antireflection film 3 is disposed on the other surface of the glass substrate G, the high-reflection film 2 is formed by performing cyclic stacking N times with a layer of high-reflection medium H and a layer of low-reflection medium L as a cycle period, where N is a positive integer, and the antireflection film 3 is formed by performing cyclic stacking M times with a layer of high-reflection medium and a layer of low-reflection medium L as a cycle period, where M is a positive integer.
It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the present invention, and are not limitations to the embodiments of the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. An optical filter for 5G optical communications, characterized in that: the anti-reflection film comprises a glass substrate (G), wherein a high-reflection film (2) is arranged on one surface of the glass substrate (G), an anti-reflection film (3) is arranged on the other surface of the glass substrate (G), the high-reflection film (2) is formed by performing N times of cyclic stacking by taking a layer of high-reflection medium (H) and a layer of low-reflection medium (L) as a cyclic period, wherein N is a positive integer, the anti-reflection film (3) is formed by performing M times of cyclic stacking by taking a layer of high-reflection medium and a layer of low-reflection medium as a cyclic period, and M is a positive integer.
2. The filter for 5G optical communication according to claim 1, wherein: n is 40, namely the high-reflection film (2) is formed by circularly stacking a layer of high-reflection medium (H) and a layer of low-reflection medium (L) for 40 times as a cycle period.
3. The filter for 5G optical communication according to claim 1, wherein: and M is 2, namely the antireflection film (3) is formed by circularly stacking a layer of high-reflection medium (H) and a layer of low-reflection medium (L) for 2 times in one period.
4. The optical filter for 5G optical communication according to any one of claims 2 or 3, wherein: the high-reflection medium (H) is made of tantalum pentoxide.
5. The filter for 5G optical communication according to claim 4, wherein: the low-reflection medium (L) is made of silicon dioxide.
6. The filter for 5G optical communication according to claim 5, wherein: the high reflection film adopts an irregular structure, namely the thickness of the high reflection medium (H) and the thickness of the low reflection medium (L) which are arranged in different cycle periods of the high reflection film (2) are different.
7. The filter for 5G optical communication according to claim 6, wherein: the thickness of the high-reflection medium (H) and the thickness of the low-reflection medium (L) which are arranged in different cycle periods of the high-reflection film (2) are as follows:
the thickness of the tantalum pentoxide in the 1 st cycle period is 151.34nm, and the thickness of the silicon dioxide is 221.63 nm;
the thickness of the tantalum pentoxide in the 2 nd cycle is 127.26nm, and the thickness of the silicon dioxide is 176.39 nm;
the thickness of tantalum pentoxide in cycle 3 is 126.03nm, and the thickness of silicon dioxide is 218.5 nm;
the thickness of tantalum pentoxide in cycle 4 is 152.62nm, and the thickness of silicon dioxide is 235.58 nm;
the thickness of tantalum pentoxide in cycle 5 is 150.66nm, and the thickness of silicon dioxide is 229.44 nm;
the thickness of tantalum pentoxide in cycle 6 is 146.09nm, and the thickness of silicon dioxide is 221.41 nm;
the thickness of the tantalum pentoxide in the 7 th cycle period is 140.26nm, and the thickness of the silicon dioxide is 210.87 nm;
the thickness of tantalum pentoxide in cycle 8 is 137.45nm, and the thickness of silicon dioxide is 215.87 nm;
the thickness of tantalum pentoxide in cycle 9 is 145.39nm, and the thickness of silicon dioxide is 228.18 nm;
the thickness of tantalum pentoxide in the 10 th cycle period is 149.21nm, and the thickness of silicon dioxide is 230.23 nm;
the thickness of the tantalum pentoxide in the 11 th cycle is 148.08nm, and the thickness of the silicon dioxide is 228.02 nm;
the thickness of the tantalum pentoxide in the 12 th cycle is 146.51nm, and the thickness of the silicon dioxide is 224.02 nm;
the thickness of the tantalum pentoxide in the 13 th cycle is 143.71nm, and the thickness of the silicon dioxide is 217.33 nm;
the thickness of tantalum pentoxide in the 14 th cycle is 140.97nm, and the thickness of silicon dioxide is 216.97 nm;
the thickness of tantalum pentoxide in cycle 15 is 144.17nm, and the thickness of silicon dioxide is 224.4 nm;
the thickness of tantalum pentoxide in the 16 th cycle period is 147.58nm, and the thickness of silicon dioxide is 227.91 nm;
the thickness of tantalum pentoxide in cycle 17 is 147.84nm, and the thickness of silicon dioxide is 227.8 nm;
the thickness of tantalum pentoxide in cycle 18 is 147.53nm, and the thickness of silicon dioxide is 226.24 nm;
the thickness of tantalum pentoxide in cycle 19 is 146.44nm, and the thickness of silicon dioxide is 221.28 nm;
the thickness of the tantalum pentoxide in the 20 th cycle period is 143.17nm, and the thickness of the silicon dioxide is 216.46 nm;
the thickness of tantalum pentoxide in cycle 21 is 142.69nm, and the thickness of silicon dioxide is 220.2 nm;
the thickness of the tantalum pentoxide of the 22 nd cycle period is 145.76nm, and the thickness of the silicon dioxide is 225.44 nm;
the thickness of tantalum pentoxide in cycle 23 is 147.2nm, and the thickness of silicon dioxide is 227.51 nm;
the thickness of tantalum pentoxide in cycle 24 is 147.8nm, and the thickness of silicon dioxide is 228.19 nm;
the thickness of tantalum pentoxide in the 25 th cycle is 148.07nm, and the thickness of silicon dioxide is 225.62 nm;
the thickness of tantalum pentoxide in cycle 26 is 145.17nm, and the thickness of silicon dioxide is 218.09 nm;
the thickness of tantalum pentoxide in cycle 27 is 141.19nm, and the thickness of silicon dioxide is 216.65 nm;
the thickness of tantalum pentoxide in cycle 28 is 142.9nm, and the thickness of silicon dioxide is 222.68 nm;
the thickness of tantalum pentoxide in cycle 29 is 145.77nm, and the thickness of silicon dioxide is 227.12 nm;
the thickness of the tantalum pentoxide in the 30 th cycle is 147.66nm, and the thickness of the silicon dioxide is 230.02 nm;
the thickness of tantalum pentoxide in the 31 st cycle is 149.53nm, and the thickness of silicon dioxide is 229.71 nm;
the thickness of tantalum pentoxide in cycle 32 is 147.1nm, and the thickness of silicon dioxide is 218.5 nm;
the thickness of the tantalum pentoxide in the 33 th cycle period is 138.51nm, and the thickness of the silicon dioxide is 210.34 nm;
the thickness of tantalum pentoxide in cycle 34 was 138.88nm, and the thickness of silicon dioxide was 218.8 nm;
the thickness of tantalum pentoxide in cycle 35 is 144.52nm, and the thickness of silicon dioxide is 227.54 nm;
the thickness of the tantalum pentoxide in the 36 th cycle period is 149.85nm, and the thickness of the silicon dioxide is 235.9 nm;
the thickness of tantalum pentoxide in cycle 37 is 154.88nm, and the thickness of silicon dioxide is 226.22 nm;
the thickness of the tantalum pentoxide of the 38 th cycle period is 132.94nm, and the thickness of the silicon dioxide is 181.01 nm;
the thickness of tantalum pentoxide in cycle 39 is 124.07nm, and the thickness of silicon dioxide is 210.03 nm;
the tantalum pentoxide thickness of cycle 40 was 126.88nm and the silicon dioxide thickness was 46.01 nm.
8. The filter for 5G optical communication according to claim 6, wherein: the antireflection film adopts an irregular structure, namely the thicknesses of high-reflection media and the thicknesses of low-reflection media in different circulation periods of the antireflection film (3) are different.
9. The filter for 5G optical communication according to claim 8, wherein: the thickness of the high-reflection medium and the thickness of the low-reflection medium which are arranged in different cycle periods of the antireflection film (3) are as follows:
the thickness of tantalum pentoxide in cycle 1 is 56.23nm, and the thickness of silicon dioxide is 74.87 nm;
the tantalum pentoxide thickness of cycle 2 was 204.99nm and the silicon dioxide thickness was 258.69 nm.
10. A5G optical communication module, its characterized in that: the optical filter for 5G optical communication, which comprises the optical filter for 5G optical communication according to any one of claims 1, 2, 3, 5, 6, 7, 8 and 9.
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