CN212435024U - High repetition frequency mode-locking pulse laser device - Google Patents

High repetition frequency mode-locking pulse laser device Download PDF

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Publication number
CN212435024U
CN212435024U CN202021349505.6U CN202021349505U CN212435024U CN 212435024 U CN212435024 U CN 212435024U CN 202021349505 U CN202021349505 U CN 202021349505U CN 212435024 U CN212435024 U CN 212435024U
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laser
dichroic mirror
sesam
saturable absorber
mirror
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陈国梁
周勇
王文洲
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Hefei Max Ray Photoelectric Technology Co ltd
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Hefei Max Ray Photoelectric Technology Co ltd
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Abstract

The utility model discloses a high repetition frequency mode-locking pulse laser device, which comprises a pump laser, a dichroic mirror, a gain fiber, a PBS polarization beam splitter prism, an SESAM semiconductor saturable absorber, a laser wavelength high reflector and a laser output isolator; the dichroic mirror comprises a pumping wavelength high transmission mirror and a laser wavelength high reflection mirror; the dichroic mirror is arranged on one side of the pump laser, the gain optical fiber is arranged on one side, away from the pump laser, of the dichroic mirror, the PBS polarization splitting prism is arranged on one side, away from the dichroic mirror, of the gain optical fiber, the SESAM semiconductor saturable absorber is arranged on one side, away from the gain optical fiber, of the PBS polarization splitting prism, and the laser wavelength high reflecting mirror is arranged on one side, away from the PBS polarization splitting prism, of the SESAM semiconductor saturable absorber. The utility model discloses laser device structure is extremely compact, reduces the laser cavity length greatly, and the laser resonance chamber length can be done for a short time, has satisfied user's user demand.

Description

High repetition frequency mode-locking pulse laser device
Technical Field
The utility model relates to a laser instrument field, concretely relates to high repetition frequency mode locking pulse laser device.
Background
Lasers are operationally divided into continuous lasers and pulsed lasers. The pulse laser is a laser which works once every certain time when the pulse width of a single laser is less than 0.25 second, has larger output power and is suitable for laser marking, cutting, distance measurement and the like. Common pulse lasers include Yttrium Aluminum Garnet (YAG) lasers, ruby lasers, neodymium glass lasers, and the like, as well as nitrogen molecule lasers, excimer lasers, and the like, among solid-state lasers. Q-switching and mode-locking are the two most common techniques for obtaining pulsed laser light.
The passive mode-locked laser is the mainstream scheme of the current ultrashort pulse laser, is limited by the length of a laser resonant cavity, the improvement of pulse repetition frequency is one of the current technical difficulties, the pulse repetition frequency of most products is in the level of 100MHz at present, the use requirement of a user cannot be met, and a high repetition frequency mode-locked pulse laser device is provided.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the technical problem that will solve lies in: how to solve passive mode-locked laser is the mainstream scheme of the ultrashort pulse laser at present, is limited by the length of the laser resonant cavity, the promotion of pulse repetition frequency is one of the technical difficulties at present, the pulse repetition frequency of most products is in the level of 100MHz at present, can not satisfy the problem of user's user demand, provide high repetition frequency mode-locked pulse laser device.
The utility model solves the technical problems by the following technical proposal, and comprises a pump laser, a dichroic mirror, a gain fiber, a PBS polarization beam splitter prism, an SESAM semiconductor saturable absorber, a laser wavelength high reflector and a laser output isolator;
the dichroic mirror comprises a pumping wavelength high transmission mirror and a laser wavelength high reflection mirror;
the dichroic mirror is arranged on one side of the pump laser, the gain optical fiber is arranged on one side, away from the pump laser, of the dichroic mirror, the PBS polarization splitting prism is arranged on one side, away from the dichroic mirror, of the gain optical fiber, the SESAM semiconductor saturable absorber is arranged on one side, away from the gain optical fiber, of the PBS polarization splitting prism, the laser wavelength high reflecting mirror is arranged on one side, away from the PBS polarization splitting prism, of the SESAM semiconductor saturable absorber, and the laser output isolator is arranged above the PBS polarization splitting prism.
Preferably, the dichroic mirror and the laser wavelength high-reflection mirror form a pair of laser resonant cavities with FP structures.
Preferably, the pump laser is coupled into the laser resonant cavity through a dichroic mirror.
Preferably, the SESAM semiconductor saturable absorber operates as a passive mode locking element, and the SESAM semiconductor saturable absorber and the mirror are integrally packaged into one integrated device.
Preferably, the PBS polarization splitting prism is a polarization selection device, and the PBS polarization splitting prism is a laser output coupling part of the laser device.
Preferably, the laser output isolator is used to prevent the returned laser light.
Compared with the prior art, the utility model has the following advantages: this high repetition frequency mode locking pulse laser device's PBS polarization beam splitting prism, the saturable absorber of SESAM semiconductor, the high speculum of laser wavelength can carry out whole encapsulation with laser output isolator to gain optic fibre, dichroic mirror also can carry out integration encapsulation with PBS polarization beam splitting prism, thereby lets this laser device structure extremely compact, reduces the laser cavity length greatly, and the laser resonator length can be done short, therefore the pulse repetition frequency fundamental frequency can reach more than 1 GHz.
Drawings
Fig. 1 is an overall structure diagram of the present invention.
In the figure: 1. a pump laser; 2. a dichroic mirror; 3. a gain fiber; 4. a PBS polarization beam splitter prism; 5. a SESAM semiconductor saturable absorber; 6. a laser wavelength high reflector; 7. a laser output isolator.
Detailed Description
The embodiments of the present invention will be described in detail below, and the present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
As shown in fig. 1, the present embodiment provides a technical solution: the high repetition frequency mode-locking pulse laser device comprises a pump laser 1, a dichroic mirror 2, a gain fiber 3, a PBS (polarization beam splitter) prism 4, an SESAM (semiconductor saturable absorber) 5, a laser wavelength high reflector 6 and a laser output isolator 7;
the dichroic mirror 2 comprises a pumping wavelength high transmission mirror and a laser wavelength high reflection mirror;
dichroic mirror 2 sets up the one side at pump laser 1, gain fiber 3 sets up the one side of keeping away from pump laser 1 at dichroic mirror 2, PBS polarization beam splitter prism 4 sets up the one side of keeping away from dichroic mirror 2 at gain fiber 3, SESAM semiconductor saturable absorber 5 sets up the one side of keeping away from gain fiber 3 at PBS polarization beam splitter prism 4, laser wavelength high reflection mirror 6 sets up the one side of keeping away from PBS polarization beam splitter prism 4 at SESAM semiconductor saturable absorber 5, laser output isolator 7 sets up the top at PBS polarization beam splitter prism 4.
The dichroic mirror 2 and the laser wavelength high reflection mirror 6 form a pair of laser resonant cavities with FP structures.
The pump laser 1 is coupled into the laser cavity via a dichroic mirror 2.
The SESAM semiconductor saturable absorber 5 works as a passive mode-locking element, and the SESAM semiconductor saturable absorber 5 and the reflector 6 are integrally packaged into an integrated device.
The PBS polarizing beam splitter prism 4 is a polarization selection device, and the PBS polarizing beam splitter prism 4 is a laser output coupling part of the laser device.
The laser output isolator 7 is used to prevent the returned laser light.
To sum up, the utility model discloses when using, pump laser 1 jets out laser, laser exports through dichroic mirror 2, and by leading-in gain fiber 3, gain fiber 3 imports PBS polarization beam splitter 4 with laser, carry out the laser after the polarization beam splitting respectively through laser output isolator 7 derivation and leading-in SESAM semiconductor saturable absorber 5 to PBS polarization beam splitter 4, laser imports laser wavelength high reflection mirror 6 after ESAM semiconductor saturable absorber 5 handles, output isolator 7 is used for preventing the laser return laser of output, guarantee the job stabilization of laser, PBS polarization beam splitter (4) is the polarization selection device, be the laser output coupling part of this laser.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.

Claims (6)

1. The high-repetition-frequency mode-locked pulse laser device is characterized by comprising a pump laser (1), a dichroic mirror (2), a gain fiber (3), a PBS (polarization beam splitter) prism (4), an SESAM (SeSAM) semiconductor saturable absorber (5), a laser wavelength high reflector (6) and a laser output isolator (7);
the dichroic mirror (2) comprises a pumping wavelength high transmission mirror and a laser wavelength high reflection mirror;
the dichroic mirror (2) is arranged on one side of the pump laser (1), the gain optical fiber (3) is arranged on one side, far away from the pump laser (1), of the dichroic mirror (2), the PBS polarization splitting prism (4) is arranged on one side, far away from the dichroic mirror (2), of the gain optical fiber (3), the SESAM semiconductor saturable absorber (5) is arranged on one side, far away from the gain optical fiber (3), of the PBS polarization splitting prism (4), the laser wavelength high reflecting mirror (6) is arranged on one side, far away from the PBS polarization splitting prism (4), of the SESAM semiconductor saturable absorber (5), and the laser output isolator (7) is arranged above the PBS polarization splitting prism (4).
2. The high repetition rate mode-locked pulsed laser device of claim 1, wherein: the dichroic mirror (2) and the laser wavelength high reflecting mirror (6) form a pair of laser resonant cavities with FP structures.
3. A high repetition frequency mode-locked pulsed laser device according to any one of claims 1 or 2, characterized in that: the pump laser (1) is coupled into the laser resonant cavity through the dichroic mirror (2).
4. The high repetition rate mode-locked pulsed laser device of claim 1, wherein: the SESAM semiconductor saturable absorber (5) works as a passive mode locking element, and the SESAM semiconductor saturable absorber (5) and the reflector (6) are integrally packaged into an integrated device.
5. The high repetition rate mode-locked pulsed laser device of claim 1, wherein: the PBS polarization beam splitter prism (4) is a polarization selection device, the PBS polarization beam splitter prism (4) is a laser output coupling part of the laser device, and the gain optical fiber (3), the dichroic mirror (2) and the PBS polarization beam splitter prism (4) are integrally packaged.
6. The high repetition rate mode-locked pulsed laser device of claim 1, wherein: the PBS polarization beam splitter prism (4), the SESAM semiconductor saturable absorber (5), the laser wavelength high reflector (6) and the laser output isolator (7) are integrally packaged.
CN202021349505.6U 2020-07-10 2020-07-10 High repetition frequency mode-locking pulse laser device Active CN212435024U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113036586A (en) * 2021-03-10 2021-06-25 厦门大学 On-chip integrated high repetition frequency laser resonant cavity device and ultrashort pulse laser
CN113594839A (en) * 2021-08-06 2021-11-02 深圳市杰普特光电股份有限公司 Optical fiber oscillator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113036586A (en) * 2021-03-10 2021-06-25 厦门大学 On-chip integrated high repetition frequency laser resonant cavity device and ultrashort pulse laser
CN113594839A (en) * 2021-08-06 2021-11-02 深圳市杰普特光电股份有限公司 Optical fiber oscillator

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