CN2123758U - Thin-film internal stress tunnel current probe measwrer - Google Patents
Thin-film internal stress tunnel current probe measwrer Download PDFInfo
- Publication number
- CN2123758U CN2123758U CN 92202708 CN92202708U CN2123758U CN 2123758 U CN2123758 U CN 2123758U CN 92202708 CN92202708 CN 92202708 CN 92202708 U CN92202708 U CN 92202708U CN 2123758 U CN2123758 U CN 2123758U
- Authority
- CN
- China
- Prior art keywords
- electrode
- sample
- metal probe
- tunnel current
- internal stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The utility model relates to a measuring apparatus for the internal stress of a thin film. The utility model is mainly characterized in that a lifting adjustor (2) and a piezoceramics device (3) are installed on the upper part of a bracket (1), wherein a metal probe (4) is installed on the front end of the piezoceramics device (3), and electrodes (7) and (8) are arranged on both sides of the metal probe (4); a sample (5) which needs to be measured is installed on the ringent part of the lower end of the bracket (1) and is arranged under the metal probe (4); the sample (5) which needs to be measured is connected with the input end (13) of control circuit (12) by an electrode (10), the output end (14) of the control circuit (12) is connected with a computer system (16) and the electrode (8), and voltage is applied to the electrode (8) so as to control the expansion and the contraction of the electrode (8) and to control the distance between the metal probe and a sample; then, the operation of testing the internal stress of the thin film can be accomplished.
Description
The utility model belongs to film internal stress measuring device, is mainly used in the sign assessment technique and the film growth on-line monitoring of film and surface modifying material.
Internal stress is the important indicator of membraneous material and surface modification, and it has reflected micromechanism information such as lattice mismatch degree, defect state between matrix and rete.At present the film internal stress measuring means that adopt can be divided into two classes: X-ray diffraction and sample distortion, and the former can not be used for on-line measurement, and rete can not too thin (＞1000
) and sensitivity relatively poor.The latter makes rete with matrix bending, distortion according to the film internal stress, calculates stress (being actually the variation of stress with processes such as plated film, alternating temperatures) by measuring deflection.Measure the measuring method that deflection has constituted different characteristics according to different principles, but the sensitivity of the existing measuring method of stack up can not be satisfied the demand.Have in the prior art:
(1) measuring method will be thrown into minute surface with sample and place light path, and specimen preparation, installation be difficulty, and is subjected to the restriction measurement sensitivity of optical wavelength relatively poor.
(2) capacitance method constitutes capacitor with sample as pole plate, and changes in capacitance has reflected the sample distortion, and its sensitivity is very poor.
(3) little sedimentation balance method stops the required power of sample distortion with balance measurement, and sample will link to each other with balance with quartz fiber, and it is the work of very fine difficulty that sample is installed.
The purpose of this utility model provide a kind of measuring accuracy and highly sensitive, can onlinely use, specimen preparation is easy and the film internal stress measuring device of easy operating.
The technical solution of the utility model
The utility model utilizes the quantum tunneling effect of electronics, two conductors are near the magnitude to A, tunnel current therebetween changes very responsive with its spacing, (scanning tunnel microscope of making according to same principle (STM) can realize 0.2 can to reach high sensitivity according to the distortion of tunnel current measuring samples
Longitudinal frame).The technical scheme of this device is to cross tunnel current between sample and probe with piezoelectric ceramics control metal probe detection flows, tunnel current amplifies the voltage that applies that forms piezoelectric ceramics through control circuit, thereby make piezoelectric ceramics flexible, distance with control metal probe and sample room, influence tunnel current conversely, constitute tunnel current negative feedback balance, probe and sample interval are from constant, then the displacement of sample (probe institute measuring point) is presented as the telescopic variation of piezoelectric ceramics, the voltage that is applied in corresponding to it.Be reflected as the variation of output voltage immediately by the distortion of this device sample, through the A/D conversion be input to computing machine can realize immediately, automatically, on-line measurement.
Content of the present utility model
Include support, lifting regulator is housed on it and regulates the piezoelectric ceramic devices of lifting by its, at the piezoelectric ceramic devices front end metal probe is housed, sample is contained in the support lower ending opening place, be in the below of metal probe.Other has control circuit, and its core is the operational amplifier that two-stage just is being in series, and the input of control circuit is to cross metal probe and the sample electric current between propping up by electrode stream; The output of control circuit is linked on the electrode of piezoelectric ceramic devices.
The utility model can contrast accompanying drawing and be described below:
Accompanying drawing is the structural representation of this tunnel current probe measurement device.1. be support among the figure, play a supportive role, and guarantee that two interlamellar spacings are from constant up and down superincumbent parts are installed; 2. support is equipped with the spiral lifting regulator on 1., during measurement rotary actuator 2. can drive piezoelectric ceramic devices 3. (stroke is selected according to measurement range) move up and down; Metal probe is equipped with in piezoelectric ceramics lower end 3. 4., below 4. be sample 5.; 5. sample is contained in support 1. in the lower ending opening place, 5. with to guarantee conduction (will be overleaf---do not have the face plating conducting film of film) after 10. electrode is connected for insulating body; 6. represent molecular beam, ion beam of film growth, surface modification etc.Piezoelectric ceramic devices two electrodes 3. 7., 8. ground connection applies voltage with being connected respectively; 9. be the electrode that 4. links to each other with metal probe; (12) be control circuit, its core is the operational amplifier (prime is a high resistance type, and the back level is a high-pressure type) that the two-stage open loop just is being in series; (11), (13) be two differential input terminals of control circuit (12), (11) link to each other with a reference current source, (13) 10. link to each other with electrode; (14) be the output terminal of control circuit (12), (15) are voltage tables, and (16) are A/D conversion and computer system, (14) simultaneously connection electrode 8., voltage table (15), computer system (16).
Adjust during measurement and 2. make it drive,, and make the sample back side and 10. conduct so that lay sample 5. 3. together with 4. upwards lifting.Then make control circuit (12) in running order, 9. applying small voltage (～tens millivolts), the tunnel current between flowing through 4. 5. is by 10. receiving (13).Apply reference current (tunnel current during its size decision balance, μ A magnitude) from (11), output to (14), the size that can observe output voltage by (15) through (12) amplification with the poor of (13).(14) voltage is received and 8. is used for controlling 3. flexible.
Enforcement of the present utility model is described below:
4. 2. careful adjusting make to 5. close, when the indication of (15) with 2. adjusting steady change, illustrate and set up the tunnel current balance that locking is 2. in position.If 3. shrink working method (otherwise polarity of exchange (13) and (11)) for powering up, when tunnel current increases, the voltage of (13) raises so that (14), 8. voltage raises and causes 3. shrinking, make 4. 5. between distance increase, tunnel current reduces, thus tunnel current negative feedback balance.Because of tunnel current to 4. 5. spacing divorce is normal responsive, think 4. 5. during the tunnel current balance between distance constant, the displacement that the flexible distortion that is summed up as 5. 3. causes can obtain according to the voltage of (14) and parameter 3..Start the processes such as film growth or surface modification that 6. begin, (16) meter record simultaneously is (14) change in voltage down, just can calculate the variation of film internal stress.
The utility model stress in thin films tunnel current probe measurement device compared with prior art has following characteristics:
(1) greatly improved the measurement sensitivity of stress in thin films, table 1 has been listed this utility model device and several typical measurement mechanism to the comparison of deflection sensitivity.
Table 1. the utility model device and several typical measuring method are measured the comparison of sensitivity to deflection
| The utility model | Optical means | Capacitance method | Little sedimentation balance method |
＜10
 |
＞1000
 |
9000
 |
1500 |
(2) can realize instant, all automatic measurement of stress in thin films, this on-line monitoring to film growth is significant.
(3) easy operating is installed simply in sample preparation.
Claims (4)
1, a kind of tunnel current probe measurement device of film internal stress, it is characterized in that support 1. the top be equipped with lifting regulator 2. with piezoelectric ceramic devices 3., metal probe is housed 4., have electrode 7. 8. in the side at piezoelectric ceramic devices front end 3., 5. sample is contained in support 1. in the lower ending opening place and be in metal probe below 4.; 9. 4. metal probe be communicated with electrode; 10. 5. sample link to each other with control circuit (12) input end (13) by electrode; The output (14) of control circuit (12), the one, link to each other with computer system, the one, 8. link to each other with electrode, so that by applying 3. flexible of Control of Voltage.
2, measurement mechanism according to claim 1 is characterized in that 2. adjustable piezoelectric ceramic component lifting 3. of lifting regulator.
3, measurement mechanism according to claim 1 is characterized in that control circuit (12) is the operational amplifier that two-stage just is being in series, and prime is a high resistance type, and the back level is a high-pressure type.
4, measurement mechanism according to claim 1 is characterized in that 7. ground connection of electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92202708 CN2123758U (en) | 1992-02-20 | 1992-02-20 | Thin-film internal stress tunnel current probe measwrer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92202708 CN2123758U (en) | 1992-02-20 | 1992-02-20 | Thin-film internal stress tunnel current probe measwrer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2123758U true CN2123758U (en) | 1992-12-02 |
Family
ID=4949493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92202708 Granted CN2123758U (en) | 1992-02-20 | 1992-02-20 | Thin-film internal stress tunnel current probe measwrer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2123758U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101915878A (en) * | 2010-07-16 | 2010-12-15 | 苏州大学 | Method for measuring depoissonization time of ferroelectric film |
| CN105891547A (en) * | 2014-09-18 | 2016-08-24 | 扬州思必得仪器设备有限公司 | Tunneling fiber |
| CN109580996A (en) * | 2018-11-30 | 2019-04-05 | 英业达科技有限公司 | A kind of hardware testing frame |
| CN111693202A (en) * | 2020-07-01 | 2020-09-22 | 中国计量大学 | Novel pressure sensor based on quantum tunneling effect |
-
1992
- 1992-02-20 CN CN 92202708 patent/CN2123758U/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101915878A (en) * | 2010-07-16 | 2010-12-15 | 苏州大学 | Method for measuring depoissonization time of ferroelectric film |
| CN101915878B (en) * | 2010-07-16 | 2012-07-25 | 苏州大学 | Method for measuring depoissonization time of ferroelectric film |
| CN105891547A (en) * | 2014-09-18 | 2016-08-24 | 扬州思必得仪器设备有限公司 | Tunneling fiber |
| CN109580996A (en) * | 2018-11-30 | 2019-04-05 | 英业达科技有限公司 | A kind of hardware testing frame |
| CN111693202A (en) * | 2020-07-01 | 2020-09-22 | 中国计量大学 | Novel pressure sensor based on quantum tunneling effect |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Dreyer et al. | Iontophoretic application of acetylcholine: advantages of high resistance micropipettes in connection with an electronic current pump | |
| Mathieu et al. | Fast self‐compensating ellipsometer | |
| CN109052317B (en) | Processing method of graphene-carbon nanotube FET device | |
| JPS63304103A (en) | Scanning surface microscope | |
| CN1117136A (en) | Detecting and analysing method and apparatus for reliability of semiconductor laser | |
| CN110108905B (en) | Method and device for detecting membrane potential and nerve cell membrane repairing behaviors of nerve cells | |
| CN113671247B (en) | Online microwave power sensor based on PT symmetrical circuit | |
| CN112881464A (en) | Method and device for directly and comprehensively measuring thermoelectric performance of micro-nano material in situ | |
| CN206858674U (en) | A kind of aluminium electrolysis anode guide rod distributed current Detection ＆ Controling apparatus and system | |
| CN2123758U (en) | Thin-film internal stress tunnel current probe measwrer | |
| CN1071249A (en) | Measure the method for micrometric displacement with tunnel effect principle | |
| CN101170865A (en) | Plasm suspending reference probe | |
| US4248086A (en) | Device for measuring the mass flow or flow rate of an insulating liquid | |
| CN208833600U (en) | A kind of films test device | |
| CN114608771B (en) | Calibration device and method for torsion balance-based thrust frame by collecting magnetic force and electrostatic force | |
| Finger et al. | Efficacy of the two-microelectrode voltage clamp technique in crayfish muscle | |
| CN201041541Y (en) | Tunnel current testing device of scanning tunnel microscope based on interconnected amplifier | |
| CN215525614U (en) | Device for directly and comprehensively measuring thermoelectric performance of micro-nano material in situ | |
| Stewart | Capacitance dilatometry attachment for a surface-force apparatus | |
| JP3115526B2 (en) | Surface force measuring device | |
| CN1904583A (en) | Tunnel current measuring device of scanning tunnel microscope based on mutual incidence amplifier | |
| CN110285857A (en) | A kind of fuel cell detection device | |
| CN100451650C (en) | Fixed single-layer DNA probe orientation controlling and real-time monitoring method and apparatus | |
| WO2003033993A1 (en) | A kelvin probe instrument | |
| JP3551308B2 (en) | Current measuring method and surface measuring device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |