CN212342637U - Vertical power MOS semiconductor device - Google Patents
Vertical power MOS semiconductor device Download PDFInfo
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- CN212342637U CN212342637U CN202021210089.1U CN202021210089U CN212342637U CN 212342637 U CN212342637 U CN 212342637U CN 202021210089 U CN202021210089 U CN 202021210089U CN 212342637 U CN212342637 U CN 212342637U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 9
- 238000004898 kneading Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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CN202021210089.1U CN212342637U (en) | 2020-06-28 | 2020-06-28 | Vertical power MOS semiconductor device |
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CN202021210089.1U CN212342637U (en) | 2020-06-28 | 2020-06-28 | Vertical power MOS semiconductor device |
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CN212342637U true CN212342637U (en) | 2021-01-12 |
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CN202021210089.1U Active CN212342637U (en) | 2020-06-28 | 2020-06-28 | Vertical power MOS semiconductor device |
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CN (1) | CN212342637U (en) |
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Effective date of registration: 20240206 Address after: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee after: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region after: China Address before: Room 501, building nw20, Suzhou nano City, 99 Jinjihu Avenue, Suzhou Industrial Park, 215000, Jiangsu Province Patentee before: SUZHOU SILIKRON SEMICONDUCTOR TECHNOLOGY CO.,LTD. Country or region before: China |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240322 Address after: Room 306, Building 2, No.1 Qingshan Road, High tech Zone, Suzhou City, Jiangsu Province, 215100 Patentee after: New Silicon Microelectronics (Suzhou) Co.,Ltd. Country or region after: China Address before: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee before: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region before: China |