CN212323003U - Transparent panel structure for improving contrast - Google Patents

Abstract

The utility model discloses a transparent panel structure for improving contrast, which comprises a step of manufacturing an electrochromic layer and a step of manufacturing a transparent display structure; the step of fabricating an electrochromic layer precedes the step of fabricating the transparent display structure; or the step of fabricating the electrochromic layer is subsequent to the step of fabricating the transparent display structure; the transparent display structure and the electrochromic layer are arranged on the substrate, the transparent display structure comprises a blank area and pixels, the electrochromic layer and the blank area are arranged in a staggered mode, the electrochromic layer and the light emitting layer are provided with an overlapped area in the vertical direction, and the vertical direction is perpendicular to the direction of the substrate; according to the technical scheme, the black or color-adjustable first electrochromic layer is independently added in the direction opposite to the position of each pixel point, so that each pixel point has the effect of an independent curtain, the contrast of the picture of the transparent display panel under the background without the dark color is improved, the display effect of the dark color picture is improved, and the application scene of the transparent display panel is widened.

Description

Transparent panel structure for improving contrast

Technical Field

The utility model relates to a transparent panel structure preparation field especially relates to a transparent panel structure who improves contrast.

Background

With the development of display technology, various new technologies are emerging, and the transparent display technology is receiving more and more attention due to the characteristic of the transparent display panel and its unique application. The AMOLED panel has more possibilities on transparent display due to the self-luminous characteristic, but the self-luminous characteristic of the AMOLED panel cannot independently display black, and different gray scales and deep colors can be displayed by matching with a black curtain background, so that the use scene of the transparent display panel is limited under special conditions.

SUMMERY OF THE UTILITY MODEL

Therefore, it is necessary to provide a transparent panel structure with improved contrast to solve the problem that the "black" color cannot be independently displayed.

To achieve the above object, the present application provides a transparent panel structure for improving contrast, comprising: an electrochromic layer, a transparent display structure and a substrate are manufactured;

the electrochromic layer is arranged between the transparent display structure and the substrate, or the electrochromic layer is arranged on the transparent display structure;

the transparent display structure and the electrochromic layer are arranged on the substrate, the transparent display structure comprises a blank area and pixels, the electrochromic layer and the blank area are arranged in a staggered mode, an overlapped area is formed between the electrochromic layer and the light emitting layer in the vertical direction, and the vertical direction is perpendicular to the direction of the substrate;

when the electrochromic layer is disposed between the transparent display structure and the substrate: the first electrochromic layer is arranged on the substrate, and a buffer layer is arranged on the first electrochromic layer; a first through hole with the first electrochromic layer as the bottom is formed in the buffer layer, the transparent display structure is arranged on the buffer layer, and a gate layer in the transparent display structure is connected with the first electrochromic layer through the first through hole;

when the electrochromic layer is disposed on the transparent display structure: and manufacturing the transparent display structure and arranging the transparent display structure on the substrate, wherein a second electrochromic layer is arranged in a non-blank area on a light emitting layer in the transparent display structure.

Further, the transparent display structure further includes: the organic light emitting diode comprises a buffer layer, a first gate layer, a gate insulating layer, a first active layer, a second active layer, a first source electrode, a first drain electrode, a second source electrode, a second drain electrode, a passivation layer, a flat layer, an anode, a pixel defining layer and a cathode;

the buffer layer is arranged on the substrate and covers the first electrochromic layer; the first gate layer and the second gate layer are arranged on the buffer layer, and the second gate layer is connected with the first electrochromic layer through a first through hole; the first gate layer and the second gate layer are further provided with the gate insulating layer; the first active layer and the second active layer are arranged on the grid insulating layer and are respectively arranged above the first grid layer and the second grid layer; the first source electrode and the first drain electrode are respectively arranged on two sides of the first active layer, and the first source electrode or the first drain electrode is connected with the second grid electrode through a second through hole in the grid electrode insulating layer; the second source electrode and the second drain electrode are respectively arranged on two sides of the second active layer; a passivation layer and a flat layer are sequentially arranged on the first active layer, the second active layer, the first source drain layer, the second source drain layer and the gate insulation layer; the anode is arranged on the flat layer and is connected with the second source drain electrode layer through the passivation layer and the third through hole in the flat layer; the anode and the flat layer are also provided with the pixel defining layer, and the pixel defining layer is provided with a fifth through hole taking the anode as the bottom; the light-emitting layer is arranged in the fifth through hole, and a fourth through hole with the buffer layer as the bottom is further arranged on one side, away from the first gate layer, of the second gate layer.

Further, the first electrochromic layer includes a first transparent electrode layer, a first electrolyte layer, a first color-changing layer, a first ion storage layer, and a second transparent electrode layer, which are sequentially stacked on the substrate.

Further, when the electrochromic layer is disposed between the transparent display structure and the substrate, a second electrochromic layer is also disposed on the transparent display structure;

the second electrochromic layer is not arranged at the position of the blank area;

and a light hole is formed in the second electrochromic layer at a position corresponding to the light emitting layer.

Further, the first electrochromic layer and the second electrochromic layer overlap different portions of the light emitting layer in the vertical direction, respectively.

Different from the prior art, the first electrochromic layer is arranged on the substrate, and the transparent display structure is manufactured on the first electrochromic layer, so that the first electrochromic layer with black or adjustable color is independently added to the position of each pixel point in the opposite direction, and each pixel point has the effect of an independent curtain, thereby improving the picture contrast of the transparent display panel without a dark background, improving the display effect of a dark picture and widening the application scene of the transparent display panel.

Drawings

Fig. 1 is the first electrochromic layer off state;

fig. 2 is an open state of the first electrochromic layer;

FIG. 3 is a diagram of the first electrochromic layer structure;

FIG. 4 is a diagram of the first electrochromic layer in positional relationship;

FIG. 5 is a diagram of the second electrochromic layer in position;

fig. 6 is a positional relationship diagram of the first electrochromic layer and the second electrochromic layer;

FIG. 7 is a diagram of the second electrochromic layer structure;

fig. 8 is a structural view of the light emitting layer, the first electrochromic layer and the second electrochromic layer;

fig. 9 is a structural view of the light emitting layer, the fourth via hole, the first electrochromic layer, and the second electrochromic layer;

FIG. 10 is a diagram illustrating the position of the second electrochromic layer covering the fourth via;

fig. 11 is a diagram illustrating a step of fabricating the first electrochromic layer;

FIG. 12 is a view showing the structure of the buffer layer;

fig. 13 is a structural view of the first gate layer and the second gate layer;

fig. 14 is a structural view of the gate insulating layer and the second via;

fig. 15 is a structural view of the first active layer and the second active layer;

fig. 16 is a structural view of the first source electrode, the first drain electrode, the second source electrode and the second drain electrode;

fig. 17 is a view showing the structure of the passivation layer;

FIG. 18 is a view showing the structure of the planarization layer;

FIG. 19 is a view showing the construction of the anode;

fig. 20 is a structural view of the pixel defining layer and a fifth via hole;

fig. 21 is a view showing the structure of the light emitting layer;

FIG. 22 is a view showing the construction of the cathode;

description of reference numerals:

1. a substrate; 2. a first electrochromic layer; 3. a buffer layer; 4. a first through hole; 5. a first gate layer; 6. a second gate layer; 7. a gate insulating layer; 8. a second through hole; 9. a first active layer; 10. a second active layer; 11. a first source electrode; 12. a first drain electrode; 13. a second source electrode; 14. a second drain electrode; 15. a passivation layer; 16. a third through hole; 17. a fourth via hole; 18. a planarization layer; 19. an anode; 20. a pixel defining layer; 21. a fifth through hole; 22. a light emitting layer; 23. a cathode; 24. a second electrochromic layer;

201. a first transparent electrode layer; 202. a second transparent electrode layer; 2401. and a third transparent electrode layer.

Detailed Description

To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.

Referring to fig. 1 to 22, the present embodiment provides a method for manufacturing a transparent panel structure with improved contrast, including the steps of: manufacturing a first electrochromic layer 2 on a substrate 1, and manufacturing a buffer layer 3 on the first electrochromic layer 2; manufacturing a first through hole 4 with the first electrochromic layer 2 as a bottom on the buffer layer 3, manufacturing a first gate layer 5 and a second gate layer 6, and connecting the second gate layer 6 with the first electrochromic layer 2 through the first through hole 4; manufacturing a gate insulating layer 7, and etching the gate insulating layer 7 to form a second through hole 8 with the second gate layer 6 as a bottom; manufacturing a first active layer 9 and a second active layer 10, wherein the first active layer 9 is arranged on the grid electrode insulating layer 7 above the first grid electrode, and the second active layer 10 is arranged on the grid electrode insulating layer 7 above the second grid electrode; manufacturing a first source electrode 11, a first drain electrode 12, a second source electrode 13 and a second drain electrode 14; the first source electrode 11 and the first drain electrode 12 are respectively arranged at two sides of the first active layer 9, and the first source electrode 11 or the first drain electrode 12 is connected with the second gate electrode through the second through hole 8; the second source electrode 13 and the second drain electrode 14 are respectively disposed at two sides of the second active layer 10; manufacturing a passivation layer 15, and etching the passivation layer 15 to form a third through hole 16 with the second source electrode 13 or the second drain electrode 14 as a bottom; etching the passivation layer 15 and the gate insulating layer 7 to form a fourth through hole 17 with the buffer layer 3 as a bottom; manufacturing a flat layer 18, and etching the flat layer 18 at the positions of the third through hole 16 and the fourth through hole 17; manufacturing a transparent anode 19, wherein the anode 19 is connected with the bottom of the third through hole 16 through the third through hole 16; manufacturing a pixel defining layer 20, and manufacturing a fifth through hole 21 on the pixel defining layer 20 with the anode 19 as a bottom; removing the pixel defining layer 20 at the position of the fourth via 17; evaporating a light emitting layer 22 in the fifth through hole 21; a transparent cathode 23 is manufactured, and the cathode 23 located at the position of the fourth through hole 17 is removed. The fourth through hole is the blank area, and the pixel is the non-blank area in the transparent display structure. In the present application, the first electrochromic layer 2 is fabricated on the substrate 1, and both the upper and lower electrodes of the first electrochromic layer 2 are transparent electrodes. The buffer layer 3 is disposed on the first electrochromic layer 2 and is connected to the second gate layer 6 through the first via 4 on the buffer layer 3. It should be further noted that the first electrochromic layer 2 may extend to the lower side of the light emitting layer 22 to completely shield the light emitting layer 22 in this embodiment; or extend to the lower part of the luminescent layer 22, but do not completely shield the luminescent layer 22, so that the luminescent layer 22 can transmit light downwards; of course, the first electrochromic layer 2 may also cover the light-emitting layer 22 and the fourth through hole 17 completely underneath. It should be further noted that the buffer layer 3 may be made of inorganic oxide or insulating compound, such as SiOx, SiNx, titanium oxide, aluminum oxide, etc., and a single-layer coating or a multi-layer coating may be performed during the fabrication of the buffer layer 3, or other organic insulating materials may be used as the buffer layer 3; forming a film on the buffer layer 3 to form a thin film transistor gate, that is, the first gate layer 5, the second gate layer 6 and related driving circuit traces, wherein the first gate layer 5 and the second gate layer 6 may be made of one or more metals with excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium, etc., or alloys, and in order to improve the transparency of the entire panel, oxides with conductivity, such as ITO, ZnO, and nano materials, such as nano silver wires, etc., may also be used; forming the gate insulating layer 7 on the first gate layer 5 and the second gate layer 6, wherein the material may be an inorganic insulating oxide or a compound with insulating properties, such as SiOx, SiNx, titanium oxide, aluminum oxide, or the like, and etching a second through hole 8 in the gate insulating layer 7 to expose an upper surface of the second gate layer 6, wherein the second through hole 8 serves to connect the second gate layer 6 with a source and a drain; the first active layer 9 and the second active layer 10 are fabricated on the gate insulating layer 7, and the materials of the first active layer and the second active layer 10 can be made of polysilicon, oxide semiconductor, graphene, carbon nanotube, organic semiconductor, etc. without limitation; forming a film on the gate insulating layer 7 to fabricate a thin film transistor source and drain, that is, a first source 11, a first drain 12, a second source 13, a second drain 14 and related signal circuit traces, wherein the first source 11, the first drain 12, the second source 13 and the second drain 14 may be made of one or more metals with excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium, etc., or alloys, and in order to improve the transparency of the whole panel, oxides with conductivity, such as ITO, ZnO, and nano materials, such as nano silver wires, etc., and simultaneously, the first source 11 or the first drain 12 is connected with the second gate layer 6 through the second through hole 8; manufacturing the passivation layer 15 on the first source electrode 11, the first drain electrode 12, the second source electrode 13 and the second drain electrode 14, wherein the material may be an inorganic insulating oxide or a compound with insulating property, such as SiOx, SiNx, titanium oxide, aluminum oxide, etc., and etching a third through hole 16 on the passivation layer 15 to expose the surface of the second drain electrode 14, wherein the third through hole 16 functions to connect the second drain electrode 14 with the anode 19 of the OLED device, and simultaneously, a fourth through hole 17 (a blank region) and the surface of the buffer layer 3 are manufactured to increase the transparency of the muscle panel; forming a flat layer 18 on the passivation layer 15, and etching the flat layer 18 at the positions of the third through hole 16 and the fourth through hole 17, wherein the flat layer 18 can be made of inorganic material or organic material, and is the same as the buffer layer 3, in particular, the flat layer 18 can be combined with the passivation layer 15, and only by increasing the thickness of the passivation layer 15, the flat layer 18 can function as the flat layer 18, and a film layer and a photomask can be reduced. Manufacturing a transparent anode 19 on the flat layer 18, selecting ITO (indium tin oxide) as a material, patterning the transparent anode 19, and connecting the anode 19 with the second drain electrode 14 through a third through hole 16; fabricating an organic pixel defining layer 20, and developing RGB pattern openings, i.e., fifth through holes 21, exposing the upper surface of the anode 19 and fourth through holes 17 at the bottom of the blank regions; evaporating an RGB organic light emitting layer 22 in the fifth through hole 21 area, wherein the RGB organic light emitting layer 22 comprises a hole injection layer HIL, a hole transport layer HTL, an organic light emitting layer 22EM, an electron transport layer ETL and an electron injection layer EIL, and the light emitting layer 22 is preferably an OLED device; continuing to evaporate the transparent cathode 23, wherein the cathode 23 is made of the following materials: magnesium-silver alloy and the like, and the array substrate 1 process is completed, and the processes such as packaging and the like can be continuously performed subsequently. The panel has different states such as transparency and color display according to different signal conditions. Compared with the common transparent display, the panel has the capability of independently displaying different color levels without the assistance of the outside, can independently display black to a certain extent, and has higher picture contrast compared with the transparent display which is already available. The panel can provide different light emitting modes through the position arrangement of the first electrochromic layer 2, and can realize single-sided light transmission and double-sided light transmission. According to the technical scheme, the first electrochromic layer 2 is arranged on the substrate 1, the transparent display structure is manufactured on the first electrochromic layer 2, the position of each pixel point is opposite to the direction, black or adjustable color is independently added to the first electrochromic layer 2, so that each pixel point has the effect of an independent curtain, the picture contrast of the transparent display panel is improved under the background without dark color, the display effect of the dark color picture is improved, and the application scene of the transparent display panel is widened.

Need the black background of collocation just can have the use scene restriction that better gray scale display effect brought for solving transparent display, the utility model provides a solution through just independently adding black or the rete of adjustable colour to the direction in every pixel position for every pixel all has the effect of independent "curtain", with the improvement at transparent display panel picture contrast under the dark background of nothing, improves the display effect of dark picture, widens transparent display panel's application scene.

Referring to fig. 3, the step of fabricating the first electrochromic layer 2 on the substrate 1 in this embodiment includes: a first transparent electrode layer 201, a first electrolyte layer, a first discoloration layer, a first ion storage layer, and a second transparent electrode layer 202 are sequentially formed on the substrate 1. The first transparent electrode layer 201 and the second transparent electrode layer 202 may be formed of an oxide of Zn, In, Sn, or the like, such as ITO, ZnO, AZO (ZnO: Al), GZO (ZnO: Ga), SnO2, or the like. The preparation of the first electrochromic layer 2 may, depending on the materials chosen, have: vacuum vapor deposition, sputter deposition (PVD), sputter deposition (CVD), spray pyrolysis, anodic 19 oxidation, hydrothermal, solvothermal, and the like; specifically, according to the design requirement, the material of the first electrochromic layer 2 may be selected from inorganic electrochromic materials such as: WO3, MoO3, Nb2O5, TiO2, NiO, IrOx, Co2O3, Rh2O3, MnO2, etc.; organic electrochromic materials such as: polythiophenes and derivatives thereof, tetrathiafulvalene, viologen, metal phthalocyanine compounds, and the like;

referring to fig. 7 to 10, the present embodiment further includes the steps of: fabricating a second electrochromic layer 24 on the cathode 23; removing part or all of the second electrochromic layer 24 at the position of the fourth through hole 17; the second electrochromic layer 24 on the light-emitting layer 22 is removed. In this embodiment, the second electrochromic layer 24 may completely cover the light-emitting layer 22, or may partially cover the light-emitting layer 22; of course, in some embodiments, the second electrochromic layer 24 may not cover the light-emitting layer 22. Referring to fig. 9, in the present embodiment, the step of fabricating the second electrochromic layer 24 on the cathode 23 includes the steps of: a second electrolyte layer, a second discoloration layer, a second ion storage layer, and a third transparent electrode layer 2401, which are stacked on the cathode 23, are sequentially formed. In this embodiment, the second electrochromic layer 24 and the cathode 23 share a single film layer. According to the technical scheme, the first electrochromic layer 2 is arranged on the substrate 1, the transparent display structure is manufactured on the first electrochromic layer 2, the position of each pixel point is opposite to the direction, black or adjustable color is independently added to the first electrochromic layer 2, so that each pixel point has the effect of an independent curtain, the picture contrast of the transparent display panel is improved under the background without dark color, the display effect of the dark color picture is improved, and the application scene of the transparent display panel is widened.

Referring to fig. 22, the present embodiment further provides a transparent panel structure for improving contrast, including: a transparent display structure, a first electrochromic layer 2 and a substrate 1; the first electrochromic layer 2 is arranged between the transparent display structure and the substrate 1; the transparent display structure includes: the second gate layer 6, the light-emitting layer 22, and the fourth via 17; the second gate layer 6 is connected to the first electrochromic layer 2 through a first via 4 in the transparent display structure; the light emitting layer 22 is disposed above the second gate, the light emitting layer 22 does not overlap with the second gate layer 6 in the vertical direction, and the fourth through hole 17 is disposed on a side of the light emitting layer 22 away from the second gate layer 6. Note that, in the present application, both the upper and lower electrodes of the first electrochromic layer 2 are transparent electrodes. The buffer layer 3 is disposed on the first electrochromic layer 2 and is connected to the second gate layer 6 through the first via 4 on the buffer layer 3. According to the technical scheme, the first electrochromic layer 2 is arranged on the substrate 1, the transparent display structure is manufactured on the first electrochromic layer 2, the position of each pixel point is opposite to the direction, black or adjustable color is independently added to the first electrochromic layer 2, so that each pixel point has the effect of an independent curtain, the picture contrast of the transparent display panel is improved under the background without dark color, the display effect of the dark color picture is improved, and the application scene of the transparent display panel is widened.

The application also provides a transparent panel structure for improving contrast, including: an electrochromic layer, a transparent display structure and a substrate are manufactured; the electrochromic layer is arranged between the transparent display structure and the substrate, or the electrochromic layer is arranged on the transparent display structure; the transparent display structure and the electrochromic layer are arranged on the substrate, the transparent display structure comprises a blank area and pixels, the electrochromic layer and the blank area are arranged in a staggered mode, an overlapped area is formed between the electrochromic layer and the light emitting layer in the vertical direction, and the vertical direction is perpendicular to the direction of the substrate; when the electrochromic layer is disposed between the transparent display structure and the substrate: the first electrochromic layer is arranged on the substrate, and a buffer layer is arranged on the first electrochromic layer; a first through hole with the first electrochromic layer as the bottom is formed in the buffer layer, the transparent display structure is arranged on the buffer layer, and a gate layer in the transparent display structure is connected with the first electrochromic layer through the first through hole; when the electrochromic layer is disposed on the transparent display structure: and manufacturing the transparent display structure and arranging the transparent display structure on the substrate, wherein a second electrochromic layer is arranged in a non-blank area on a light emitting layer in the transparent display structure.

Referring to fig. 18, in the present embodiment, the transparent display structure further includes: a buffer layer 3, a first gate layer 5, a gate insulating layer 7, a first active layer 9, a second active layer 10, a first source electrode 11, a first drain electrode 12, a second source electrode 13, a second drain electrode 14, a passivation layer 15, a planarization layer 18, an anode electrode 19, a pixel defining layer 20, and a cathode electrode 23; the buffer layer 3 is arranged on the substrate 1 and covers the first electrochromic layer 2; the first gate layer 5 and the second gate layer 6 are disposed on the buffer layer 3, and the second gate layer 6 is connected to the first electrochromic layer 2 through the first via 4; the first gate layer 5 and the second gate layer 6 are further provided with the gate insulating layer 7; the first active layer 9 and the second active layer 10 are arranged on the gate insulating layer 7 and are respectively arranged above the first gate layer 5 and the second gate layer 6; the first source electrode 11 and the first drain electrode 12 are respectively arranged on two sides of the first active layer 9, and the first source electrode 11 or the first drain electrode 12 is connected with the second gate electrode through the second through hole 8 on the gate insulation layer 7; the second source electrode 13 and the second drain electrode 14 are respectively arranged on two sides of the second active layer 10; a passivation layer 15 and a flat layer 18 are sequentially arranged on the first active layer 9, the second active layer 10, the first source drain layer, the second source drain layer and the gate insulating layer 7; the anode 19 is arranged on the flat layer 18 and is connected with the second source drain electrode layer through the passivation layer 15 and the third through hole 16 on the flat layer 18; the anode 19 and the planarization layer 18 are further provided with the pixel defining layer 20, and the pixel defining layer 20 is provided with a fifth through hole 21 with the anode 19 as a bottom; the light emitting layer 22 is disposed in the fifth through hole 21, and a fourth through hole 17 with the buffer layer 3 as a bottom is further disposed on a side of the second gate layer 6 away from the first gate layer 5. It should be further noted that the buffer layer 3 may be made of inorganic oxide or insulating compound, such as SiOx, SiNx, titanium oxide, aluminum oxide, etc., and a single-layer coating or a multi-layer coating may be performed during the fabrication of the buffer layer 3, or other organic insulating materials may be used as the buffer layer 3; forming a film on the buffer layer 3 to form a thin film transistor gate, that is, the first gate layer 5, the second gate layer 6 and related driving circuit traces, wherein the first gate layer 5 and the second gate layer 6 may be made of one or more metals with excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium, etc., or alloys, and in order to improve the transparency of the entire panel, oxides with conductivity, such as ITO, ZnO, and nano materials, such as nano silver wires, etc., may also be used; forming the gate insulating layer 7 on the first gate layer 5 and the second gate layer 6, wherein the material may be an inorganic insulating oxide or a compound with insulating properties, such as SiOx, SiNx, titanium oxide, aluminum oxide, or the like, and etching a second through hole 8 in the gate insulating layer 7 to expose an upper surface of the second gate layer 6, wherein the second through hole 8 serves to connect the second gate layer 6 with a source and a drain; the first active layer 9 and the second active layer 10 are fabricated on the gate insulating layer 7, and the materials of the first active layer and the second active layer 10 can be made of polysilicon, oxide semiconductor, graphene, carbon nanotube, organic semiconductor, etc. without limitation; forming a film on the gate insulating layer 7 to fabricate a thin film transistor source and drain, that is, a first source 11, a first drain 12, a second source 13, a second drain 14 and related signal circuit traces, wherein the first source 11, the first drain 12, the second source 13 and the second drain 14 may be made of one or more metals with excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium, etc., or alloys, and in order to improve the transparency of the whole panel, oxides with conductivity, such as ITO, ZnO, and nano materials, such as nano silver wires, etc., and simultaneously, the first source 11 or the first drain 12 is connected with the second gate layer 6 through the second through hole 8; manufacturing the passivation layer 15 on the first source electrode 11, the first drain electrode 12, the second source electrode 13 and the second drain electrode 14, wherein the material may be an inorganic insulating oxide or a compound with insulating property, such as SiOx, SiNx, titanium oxide, aluminum oxide, etc., and etching a third through hole 16 on the passivation layer 15 to expose the surface of the second drain electrode 14, wherein the third through hole 16 functions to connect the second drain electrode 14 with the anode 19 of the OLED device, and simultaneously, a fourth through hole 17 (a blank region) and the surface of the buffer layer 3 are manufactured to increase the transparency of the muscle panel; forming a flat layer 18 on the passivation layer 15, and etching the flat layer 18 at the positions of the third through hole 16 and the fourth through hole 17, wherein the flat layer 18 can be made of inorganic material or organic material, and is the same as the buffer layer 3, in particular, the flat layer 18 can be combined with the passivation layer 15, and only by increasing the thickness of the passivation layer 15, the flat layer 18 can function as the flat layer 18, and a film layer and a photomask can be reduced. Manufacturing a transparent anode 19 on the flat layer 18, selecting ITO (indium tin oxide) as a material, patterning the transparent anode 19, and connecting the anode 19 with the second drain electrode 14 through a third through hole 16; fabricating an organic pixel defining layer 20, and developing RGB pattern openings, i.e., fifth through holes 21, exposing the upper surface of the anode 19 and fourth through holes 17 at the bottom of the blank regions; evaporating an RGB organic light emitting layer 22 in the fifth through hole 21 area, wherein the RGB organic light emitting layer 22 comprises a hole injection layer HIL, a hole transport layer HTL, an organic light emitting layer 22EM, an electron transport layer ETL and an electron injection layer EIL, and the light emitting layer 22 is preferably an OLED device; continuing to evaporate the transparent cathode 23, wherein the cathode 23 is made of the following materials: magnesium-silver alloy and the like, and the array substrate 1 process is completed, and the processes such as packaging and the like can be continuously performed subsequently. The panel has different states such as transparency and color display according to different signal conditions. Compared with the common transparent display, the panel has the capability of independently displaying different color levels without the assistance of the outside, can independently display black to a certain extent, and has higher picture contrast compared with the transparent display which is already available. The panel can provide different light emitting modes through the position arrangement of the first electrochromic layer 2, and can realize single-sided light transmission and double-sided light transmission. When the light-emitting layer 22 is in operation, the first electrochromic layer 2 and the second electrochromic layer 24 are in a light-tight state, so that a light-shielding effect can be formed on the light-emitting layer 22, and the influence of light on the operation state of the device of the light-emitting layer 22 is reduced. The upper side and the lower side of the luminescent layer 22 are both provided with electrochromic layers, which not only meets the display requirements of different viewing surfaces, but also can further increase the picture contrast.

It should be further noted that the first electrochromic layer 2 may extend to the lower side of the light emitting layer 22 to completely shield the light emitting layer 22 in this embodiment; or extend to the lower part of the luminescent layer 22, but do not completely shield the luminescent layer 22, so that the luminescent layer 22 can transmit light downwards; of course, the first electrochromic layer 2 may also cover the light-emitting layer 22 and the fourth through hole 17 completely underneath. Specifically, the first electrochromic layer 2 and the light-emitting layer 22 have an overlapping portion in the vertical direction; and one end of the first electrochromic layer 2 close to the fourth through hole 17 is located below the light emitting layer 22, i.e., one end close to the fourth through hole 17 extends to below the light emitting layer 22. Or the light emitting layer 22 completely overlaps the first electrochromic layer 2 in the vertical direction, and the first electrochromic layer 2 does not overlap the fourth through-hole 17 in the vertical direction. Or the first electrochromic layer 2 completely overlaps with the light emitting layer 22 in the vertical direction, and the first electrochromic layer 2 completely overlaps with the fourth through-hole 17 in the vertical direction.

Please refer to fig. 4 to fig. 6, further comprising: a second electrochromic layer 24; the second electrochromic layer 24 is disposed on the transparent display structure, and one side of the second electrochromic layer 24 close to the transparent display structure and the cathode 23 share one film layer, and are partially overlapped or not overlapped with the light-emitting layer 22 in the vertical direction. Specifically, the first electrochromic layer 2 and the second electrochromic layer 24 are combined with each other to form a plurality of light transmission modes. Such as: the second electrochromic layer 24 is not arranged above the transparent display structure, the first electrochromic layer 2 is arranged below the transparent display structure, and the first electrochromic layer 2 and the light emitting layer 22 are completely overlapped in the vertical direction; the first electrochromic layer 2 is not arranged below the transparent display structure, the second electrochromic layer 24 is arranged above the transparent display structure, and the second electrochromic layer 24 and the light emitting layer 22 are completely overlapped in the vertical direction; the upper side and the lower side of the transparent display structure are respectively provided with the first electrochromic layer 2 and the second electrochromic layer 24, the first electrochromic layer 2 is used for covering the light-emitting layer 22, and the second electrochromic layer 24 is used for covering the other part of the light-emitting layer 22. According to the technical scheme, the first electrochromic layer 2 is arranged on the substrate 1, the transparent display structure is manufactured on the first electrochromic layer 2, the position of each pixel point is opposite to the direction, black or adjustable color is independently added to the first electrochromic layer 2, so that each pixel point has the effect of an independent curtain, the picture contrast of the transparent display panel is improved under the background without dark color, the display effect of the dark color picture is improved, and the application scene of the transparent display panel is widened.

It should be noted that, although the above embodiments have been described herein, the scope of the present invention is not limited thereby. Therefore, based on the innovative concept of the present invention, the changes and modifications of the embodiments described herein, or the equivalent structure or equivalent process changes made by the contents of the specification and the drawings of the present invention, directly or indirectly apply the above technical solutions to other related technical fields, all included in the scope of the present invention.

Claims (5)

1. A transparent panel structure for improving contrast, comprising: an electrochromic layer, a transparent display structure and a substrate are manufactured;

the electrochromic layer is arranged between the transparent display structure and the substrate, or the electrochromic layer is arranged on the transparent display structure;

the transparent display structure and the electrochromic layer are arranged on the substrate, the transparent display structure comprises a blank area and pixels, the electrochromic layer and the blank area are arranged in a staggered mode, an overlapped area is formed between the electrochromic layer and the light emitting layer in the vertical direction, and the vertical direction is perpendicular to the direction of the substrate;

when the electrochromic layer is disposed between the transparent display structure and the substrate: the first electrochromic layer is arranged on the substrate, and a buffer layer is arranged on the first electrochromic layer; a first through hole with the first electrochromic layer as the bottom is formed in the buffer layer, the transparent display structure is arranged on the buffer layer, and a gate layer in the transparent display structure is connected with the first electrochromic layer through the first through hole;

when the electrochromic layer is disposed on the transparent display structure: and manufacturing the transparent display structure and arranging the transparent display structure on the substrate, wherein a second electrochromic layer is arranged in a non-blank area on a light emitting layer in the transparent display structure.

2. A transparent panel structure for improving contrast according to claim 1, wherein said transparent display structure further comprises: the organic light emitting diode comprises a buffer layer, a first gate layer, a gate insulating layer, a first active layer, a second active layer, a first source electrode, a first drain electrode, a second source electrode, a second drain electrode, a passivation layer, a flat layer, an anode, a pixel defining layer and a cathode;

the buffer layer is arranged on the substrate and covers the first electrochromic layer; the first gate layer and the second gate layer are arranged on the buffer layer, and the second gate layer is connected with the first electrochromic layer through a first through hole; the first gate layer and the second gate layer are further provided with the gate insulating layer; the first active layer and the second active layer are arranged on the grid insulating layer and are respectively arranged above the first grid layer and the second grid layer; the first source electrode and the first drain electrode are respectively arranged on two sides of the first active layer, and the first source electrode or the first drain electrode is connected with the second grid electrode through a second through hole in the grid electrode insulating layer; the second source electrode and the second drain electrode are respectively arranged on two sides of the second active layer; a passivation layer and a flat layer are sequentially arranged on the first active layer, the second active layer, the first source drain layer, the second source drain layer and the gate insulation layer; the anode is arranged on the flat layer and is connected with the second source drain electrode layer through the passivation layer and the third through hole in the flat layer; the anode and the flat layer are also provided with the pixel defining layer, and the pixel defining layer is provided with a fifth through hole taking the anode as the bottom; the light-emitting layer is arranged in the fifth through hole, and a fourth through hole with the buffer layer as the bottom is further arranged on one side, away from the first gate layer, of the second gate layer.

3. A contrast-improving transparent panel structure according to claim 1, wherein the first electrochromic layer comprises a first transparent electrode layer, a first electrolyte layer, a first color-changing layer, a first ion storage layer and a second transparent electrode layer, which are sequentially stacked on the substrate.

4. A transparent panel structure for improving contrast according to claim 1, wherein a second electrochromic layer is further disposed on the transparent display structure when the electrochromic layer is disposed between the transparent display structure and the substrate;

the second electrochromic layer is not arranged at the position of the blank area;

and a light hole is formed in the second electrochromic layer at a position corresponding to the light emitting layer.

5. A transparent panel structure for improving contrast according to claim 1, wherein the first electrochromic layer and the second electrochromic layer are respectively overlapped with different portions of the light emitting layer in the vertical direction.

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