CN212322979U - Combined patch diode - Google Patents
Combined patch diode Download PDFInfo
- Publication number
- CN212322979U CN212322979U CN202021335934.8U CN202021335934U CN212322979U CN 212322979 U CN212322979 U CN 212322979U CN 202021335934 U CN202021335934 U CN 202021335934U CN 212322979 U CN212322979 U CN 212322979U
- Authority
- CN
- China
- Prior art keywords
- diode
- packaging body
- conductive pin
- paster
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 238000005253 cladding Methods 0.000 claims abstract description 3
- 239000002274 desiccant Substances 0.000 claims description 8
- 239000013464 silicone adhesive Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims 5
- 238000004806 packaging method and process Methods 0.000 abstract description 25
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
The utility model provides a modular paster diode, include the diode wafer, be located the diode wafer left and right sides and all with the electrically conductive foot of negative pole, the electrically conductive foot of positive pole, the cladding of diode wafer electric connection are in the packaging body in the diode wafer outside, the packaging body upper end is equipped with the arcwall face of upwards arching, the arcwall face coats there is one deck reflection of light coating, the packaging body front end is equipped with T type slider, the packaging body rear end be equipped with T type slider assorted T type spout, the packaging body lower extreme still is equipped with the cushion course. The utility model discloses a paster diode can be assembled a plurality of paster diodes side by side and use, reduces the clearance between the paster diode to can standardize the mounted position of paster diode, promote the position accuracy of paster diode.
Description
Technical Field
The utility model relates to a diode technical field, concretely relates to modular paster diode.
Background
The diode is also called a crystal diode, and is called a diode for short. Among electronic components, a device having two electrodes allows current to flow only in a single direction, and many applications use the rectifying function thereof. The most common function of a diode is to allow current to pass in only one direction, referred to as forward bias, and to block in the reverse direction, referred to as reverse bias. Thus, the diode can be thought of as an electronic version of the check valve. A part of the semiconductor silicon or germanium is doped with a trace of trivalent element boron to form a P type semiconductor, and the other part of the semiconductor silicon or germanium is doped with a trace of pentavalent element phosphorus to form an N type semiconductor. A PN junction is formed at the junction of the P-type and N-type semiconductors. A PN junction is a diode, a lead wire of a P area is called an anode, and a lead wire of an N area is called a cathode. In the prior art, once a circuit board is in fire, the diode is easily burnt and damaged.
SUMMERY OF THE UTILITY MODEL
To above problem, the utility model provides a modular paster diode can assemble a plurality of paster diodes side by side and use, reduces the clearance between the paster diode to can standardize the mounted position of paster diode, promote the position accuracy of paster diode.
In order to achieve the above object, the present invention provides the following technical solutions:
the utility model provides a modular paster diode, includes the diode wafer, is located the diode wafer left and right sides and all with diode wafer electric connection's negative pole conductive pin, positive pole conductive pin, cladding are in the packaging body in the diode wafer outside, the packaging body upper end is equipped with the arcwall face of upwards arching, the arcwall face upper end covers there is one deck reflection of light coating, the packaging body front end is equipped with T type slider, the packaging body rear end be equipped with T type slider assorted T type spout, the packaging body lower extreme still is equipped with the cushion coat.
Specifically, the left and right sides of the package body are respectively provided with a cathode mark and an anode mark, the cathode mark is arranged on one side of the cathode conductive pin, and the anode mark is arranged on one side of the anode conductive pin.
Specifically, arc-shaped grooves are further formed in the front end and the rear end of the packaging body, drying agent pieces are bonded in the arc-shaped grooves, and the two drying agent pieces are located on the upper sides of the T-shaped sliding block and the T-shaped sliding groove respectively.
Specifically, the diode wafer is electrically connected with the cathode conductive pin and the anode conductive pin through gold wires.
Specifically, the outer sides of the joints of the cathode conductive pins, the anode conductive pins and the packaging body are also filled with silicone adhesive.
The utility model has the advantages that:
firstly, the patch diode of the utility model can be assembled and used side by side, reduce the gap between the patch diodes, standardize the mounting position of the patch diode and improve the position accuracy of the patch diode;
the second, be equipped with the arcwall face of upwards arching in the packaging body upper end, arcwall face upper end covers there is one deck reflection of light coating, and the phenomenon of packaging body upper end ponding can be avoided to the arcwall face, and reflection of light coating then has the reflex action of preferred to thermal radiation, can promote the heat-proof quality of paster diode.
Drawings
Fig. 1 is a schematic structural diagram of a combined patch diode of the present invention.
Fig. 2 is a cross-sectional view of plane a-a in fig. 1.
Fig. 3 is a schematic structural diagram of two patch diodes combined side by side.
The reference signs are: the LED chip comprises a diode chip 1, a cathode conductive pin 2, an anode conductive pin 3, a packaging body 4, a reflective coating 5, a T-shaped sliding block 6, a T-shaped sliding groove 7, a buffer cushion layer 8, an anode mark 9, a drying agent sheet 10 and silicone adhesive 11.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.
As shown in FIGS. 1 to 3:
a combined chip diode comprises a diode wafer 1, cathode conductive pins 2, anode conductive pins 3 and a packaging body 4, wherein the cathode conductive pins 2 and the anode conductive pins 3 are positioned on the left side and the right side of the diode wafer 1 and are electrically connected with the diode wafer 1, the packaging body 4 is coated on the outer side of the diode wafer 1, the upper end of the packaging body 4 is provided with an upwards arched arc surface, the arc surface can avoid the phenomenon of water accumulation at the upper end of the packaging body 4, the upper end of the arc surface is covered with a layer of reflective coating 5, the reflective coating 5 has better reflection effect on heat radiation and can improve the heat insulation performance of the chip diode, the front end of the packaging body 4 is provided with a T-shaped sliding block 6, the rear end of the packaging body 4 is provided with a T-shaped sliding groove 7 matched with the T-shaped sliding block 6, the lower end of the packaging body 4 is also provided with a, the T-shaped sliding block 6 of one of the patch diodes is inserted into the T-shaped sliding groove 7 of the other patch diode, and then the two patch diodes are respectively welded on two circuits.
Preferably, for the convenience of identifying the cathode and the anode of the patch diode by a user, the left and the right side surfaces of the packaging body 4 are respectively provided with a cathode mark and an anode mark 9, the cathode mark is arranged close to one side of the cathode conductive pin 2, and the anode mark 9 is arranged close to one side of the anode conductive pin 3.
Preferably, in order to avoid water drops from falling onto the circuit board along the outer wall of the packaging body 4, arc-shaped grooves are further formed in the front end and the rear end of the packaging body 4, drying agent pieces 10 are bonded in the arc-shaped grooves, the drying agent pieces 10 are bonded and fixed through glue, replacement is convenient, and the two drying agent pieces 10 are respectively located on the upper sides of the T-shaped sliding blocks 6 and the T-shaped sliding grooves 7.
Preferably, the diode chip 1 is electrically connected to the cathode conductive pin 2 and the anode conductive pin 3 by gold wires.
Preferably, the silicone adhesive 11 is further filled outside the joints of the cathode conductive pins 2, the anode conductive pins 3 and the package 4, and the cathode conductive pins 2 and the anode conductive pins 3 are adhered and fixed by the silicone adhesive 11, so that the cathode conductive pins 2 and the anode conductive pins 3 can be prevented from being broken at the extending positions of the package 4.
The above examples only represent 1 embodiment of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (5)
1. The utility model provides a modular paster diode, its characterized in that includes diode wafer (1), is located diode wafer (1) the left and right sides and all with diode wafer (1) electric connection's electrically conductive foot of negative pole (2), electrically conductive foot of positive pole (3), cladding are in encapsulation body (4) in the diode wafer (1) outside, encapsulation body (4) upper end is equipped with the arcwall face of upwards arching, arcwall face coats and is stamped one deck reflection of light coating (5), encapsulation body (4) front end is equipped with T type slider (6), encapsulation body (4) rear end be equipped with T type slider (6) assorted T type spout (7), encapsulation body (4) lower extreme still is equipped with buffer cushion (8).
2. The combined patch diode according to claim 1, wherein the left and right sides of the package body (4) are respectively provided with a cathode mark and an anode mark (9), the cathode mark is arranged close to one side of the cathode conductive pin (2), and the anode mark (9) is arranged close to one side of the anode conductive pin (3).
3. The combined patch diode according to claim 1, wherein the front end and the rear end of the package body (4) are further provided with arc-shaped grooves, desiccant sheets (10) are bonded in the arc-shaped grooves, and the two desiccant sheets (10) are respectively located on the upper sides of the T-shaped sliding block (6) and the T-shaped sliding groove (7).
4. The combined patch diode of claim 1, wherein the diode chip (1) is electrically connected to the cathode conductive pin (2) and the anode conductive pin (3) by gold wires.
5. The combined patch diode according to claim 1, wherein the outside of the junction of the cathode conductive pin (2), the anode conductive pin (3) and the package body (4) is further filled with silicone adhesive (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021335934.8U CN212322979U (en) | 2020-07-09 | 2020-07-09 | Combined patch diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021335934.8U CN212322979U (en) | 2020-07-09 | 2020-07-09 | Combined patch diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212322979U true CN212322979U (en) | 2021-01-08 |
Family
ID=74028689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021335934.8U Active CN212322979U (en) | 2020-07-09 | 2020-07-09 | Combined patch diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212322979U (en) |
-
2020
- 2020-07-09 CN CN202021335934.8U patent/CN212322979U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231107 Address after: 523430 Building 1 and 2, No. 70, Liaobu Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee after: Xianzhike semiconductor technology (Dongguan) Co.,Ltd. Address before: 523430 Room 102, building 1, 76 Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee before: Mutual Creation (Dongguan) Electronic Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right |