CN212316285U - Silicon epitaxial chamber - Google Patents
Silicon epitaxial chamber Download PDFInfo
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- CN212316285U CN212316285U CN202020475826.4U CN202020475826U CN212316285U CN 212316285 U CN212316285 U CN 212316285U CN 202020475826 U CN202020475826 U CN 202020475826U CN 212316285 U CN212316285 U CN 212316285U
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Abstract
The utility model provides a silicon epitaxial cavity, which comprises a first cavity and a second cavity, wherein a tray and a rotating shaft for bearing wafers are arranged in the first cavity; the second cavity surrounds the outside of the first cavity, a heat source and a plurality of first thermometers are arranged in the second cavity, and the plurality of first thermometers at least correspondingly detect the temperatures of the centers of the upper surface and the lower surface of the wafer and the edges of the upper surface and the lower surface of the wafer. The temperature detectors for detecting the temperatures of the upper surface and the lower surface of the wafer in different areas are additionally arranged, so that the temperature detection of the surface of the wafer is refined, the heat source can be adjusted in a targeted manner according to the detected temperature conditions of the different areas of the wafer, the consistency of the overall temperature of the wafer can be effectively improved, and the nonuniformity of the temperature of the wafer is avoided. Simultaneously the utility model discloses a tray includes transparent or translucent carborundum tray, has still set up the heat-conducting layer at the tray upper surface, can further guarantee the homogeneity of wafer temperature.
Description
Technical Field
The utility model relates to a silicon epitaxial equipment technical field especially relates to a silicon epitaxial cavity.
Background
The silicon epitaxial process is generally performed at a high temperature, and an epitaxial layer is grown on the surface of a wafer by performing a heat treatment operation on the wafer, and in the process, the uniformity of the overall temperature of the wafer has a great influence on the quality of a final product.
The existing chamber for carrying out the silicon epitaxial process has many factors which easily cause the non-uniformity of the wafer temperature:
1: the heat treatment operation in the epitaxial process is usually feedback-controlled by temperature measurement to ensure the uniformity of a temperature field, the measurement of the temperature of a wafer in the existing chamber is mostly detected by arranging a pyrometer above and below the wafer respectively, the temperature measured by any pyrometer is taken as the integral average temperature of the corresponding surface of the wafer, and then the heating treatment of the upper surface and the lower surface of the wafer is controlled, and because the arrangement is that the temperature of the local position of the surface of the wafer detected by one pyrometer is taken as the integral temperature of the surface of the wafer, the unicity of the heat treatment operation is easily caused, the integral temperature of the wafer is further caused to be uneven, and the performance and the yield of a semiconductor device are finally influenced;
2: the tray for bearing the wafer in the existing chamber is composed of a thicker graphite layer and a SiC layer coated on the upper surface of the graphite layer, and when a pyrometer positioned below the wafer measures the temperature, infrared signals emitted by the wafer are absorbed by the opaque graphite layer, so that the pyrometer cannot detect the real temperature of the lower surface of the wafer, and the temperature unevenness of the upper surface and the lower surface of the wafer is easily caused; and the SiC directly contacted with the lower surface of the wafer has poor heat-conducting property, which is not beneficial to the diffusion and conduction of heat on the lower surface of the wafer and can also cause the temperature on the lower surface of the wafer to be uneven.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings of the prior art, the present invention provides a silicon epitaxial chamber capable of ensuring the uniformity of the overall temperature distribution of a wafer.
To achieve the above and other related objects, the present invention provides a silicon epitaxial chamber, comprising:
the wafer loading device comprises a first chamber, a second chamber and a third chamber, wherein a tray and a rotating shaft for bearing wafers are arranged in the first chamber, and the rotating shaft is connected with the tray so as to drive the tray to rotate;
the second cavity surrounds the outside of the first cavity, a heat source and a plurality of first thermometers are arranged in the second cavity, and the plurality of first thermometers at least correspondingly detect the temperatures of the centers of the upper surface and the lower surface of the wafer and the edges of the upper surface and the lower surface of the wafer.
As an alternative of the present invention, the first temperature measuring device includes 4, and the average distribution is in the top and the below of tray, corresponding detection the center of the upper and lower surfaces of the wafer reaches the temperature of the edge of the upper and lower surfaces of the wafer.
As an alternative of the present invention, the plurality of first thermometers further correspond to detect the temperature at the center of the radius of the upper and lower surfaces of the wafer.
As an alternative of the present invention, the first temperature measuring device includes 6 temperature measuring devices, which are equally distributed above and below the tray, and correspond to the wafer upper and lower surface centers and the wafer upper and lower surface radius centers and the wafer upper and lower surface edge temperatures.
As an alternative of the invention, the tray comprises a transparent or translucent silicon carbide tray.
As an alternative of the present invention, the upper surface of the tray is further provided with a heat conducting layer.
As an alternative of the present invention, the heat conducting layer includes a graphene layer.
As an alternative of the present invention, the number of graphene layers is less than 20.
As an alternative of the invention, the heat source comprises a heating lamp and/or an induction coil.
As the utility model discloses an alternative, the heat lamp includes first heat lamp and second heat lamp, first heat lamp is right the inner circle region of surface heats about the wafer, the second heat lamp is right the outer lane region of surface heats about the wafer.
As an alternative of the present invention, the heating lamps are disposed above and below the tray, and are located above and below the tray the heating lamps are all continuously disposed, wherein the first heating lamps are spaced apart from the second heating lamps.
As an alternative of the present invention, a metal reflective screen is further disposed in the second chamber, the metal reflective screen corresponds to the heating lamp, and is disposed above and below the tray.
As an alternative of the present invention, the metal reflecting screen includes that the plane is regional and the figure is regional, the plane regional with the regional interval of figure sets up, wherein the plane is regional to be corresponded the second heating lamp, the figure is regional to first heating lamp.
As an alternative of the present invention, a second thermometer is further disposed in the second chamber, and the second thermometer is used for detecting the temperature at the top of the first chamber.
As an alternative of the present invention, the silicon epitaxial chamber further comprises a driving device for driving the tray to rotate, the driving device comprises a rotating motor.
As an alternative of the present invention, the rotating shaft is vertically disposed, the top end of the rotating shaft is connected to the tray, and the bottom end is connected to the driving device.
As an alternative of the present invention, the size of the wafer carried by the tray is one of 8 inches and 12 inches.
As described above, the utility model discloses a silicon epitaxial chamber has following beneficial effect:
the silicon epitaxial chamber provided by the utility model comprises a first chamber and a second chamber, wherein a tray and a rotating shaft for bearing wafers are arranged in the first chamber; the second cavity surrounds the outside of the first cavity, a heat source and a plurality of first thermometers are arranged in the second cavity, and the plurality of first thermometers at least correspondingly detect the temperatures of the centers of the upper surface and the lower surface of the wafer and the edges of the upper surface and the lower surface of the wafer. The temperature detectors for detecting the temperatures of the upper surface and the lower surface of the wafer are additionally arranged, and the temperature detectors can at least detect the temperatures of the centers of the upper surface and the lower surface of the wafer and the temperatures of the edges of the upper surface and the lower surface of the wafer, so that the temperature detection on the surface of the wafer is refined, the heat source can be adjusted in a targeted manner according to the detected temperature conditions of different areas of the wafer, the consistency of the overall temperature of the wafer can be effectively improved, and the nonuniformity of the temperature of the wafer is avoided.
The utility model discloses a tray includes transparent or translucent carborundum tray for the thermometer that is located the tray below can directly detect the temperature of wafer lower surface, thereby can guarantee the uniformity of surface temperature about the wafer.
The utility model discloses still set up the heat-conducting layer at the tray upper surface, utilize the excellent heat conductivility of heat-conducting layer can be with heat transverse diffusion to whole tray scope rapidly when heating the wafer, and then evenly conduct to the wafer lower surface, can effectively guarantee the homogeneity of wafer lower surface temperature.
Drawings
Fig. 1 is a schematic structural diagram of a silicon epitaxial chamber according to an embodiment of the present invention.
Fig. 2 is a schematic view of the wafer zoned heating disclosed in an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a metal reflective screen according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a silicon epitaxial chamber according to an embodiment of the present invention.
Fig. 5 is a schematic structural view of a silicon epitaxial chamber according to an embodiment of the present invention.
The reference numbers illustrate:
1. first chamber 10, inner ring area of wafer
2. Wafer 11. outer zone of wafer
3. Tray 12 metal reflecting screen
4. Rotary shaft 13, plane area of metal reflecting screen
5. Second chamber 14. metal reflecting screen pattern area
6. First thermometer 15, second thermometer
7. Heating lamp 16. driving device
8. First heating lamps 17, heat conducting layer
9. Second heating lamp
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be apparent to those skilled in the art from the disclosure herein. The present application is capable of other and different embodiments and its several details are capable of modifications and/or changes in various respects, all without departing from the spirit of the present application. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
It should be understood that the drawings provided in the embodiments of the present application are only for illustrating the basic concept of the present invention, and although only the components related to the present invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated. The structure, ratio, size and the like shown in the drawings are only used for matching with the content disclosed in the specification, so that those skilled in the art can understand and read the content, and do not limit the limit conditions that the present application can be implemented, so that the essence of the technology is not existed, and any structural modification, ratio relationship change or size adjustment should still fall within the scope that the technical content disclosed in the present application can cover without affecting the efficacy and the achievable purpose of the present invention.
The first embodiment is as follows:
the present embodiments provide a silicon epitaxial chamber, comprising:
the wafer processing device comprises a first chamber 1, wherein a tray 3 and a rotating shaft 4 for bearing a wafer 2 are arranged in the first chamber 1, and the rotating shaft 4 is connected with the tray 3 to drive the tray 3 to rotate;
the second chamber 5, the second chamber 5 surrounds outside the first chamber 1, be provided with heat source and a plurality of first temperature detector 6 in the second chamber 5, the temperature at the edge of the center of the upper and lower surface of a plurality of first temperature detector 6 corresponding detection wafer 2 upper and lower surface and wafer 2 upper and lower surface at least.
The temperature detectors for detecting the temperatures of the upper surface and the lower surface of the wafer are additionally arranged, and the temperature detectors can at least detect the temperatures of the centers of the upper surface and the lower surface of the wafer and the temperatures of the edges of the upper surface and the lower surface of the wafer, so that the temperature detection on the surface of the wafer is refined, the heat source can be adjusted in a targeted manner according to the detected temperature conditions of different areas of the wafer, the consistency of the overall temperature of the wafer can be effectively improved, and the nonuniformity of the temperature of the wafer is avoided.
Note that the spindle 4 includes a quartz spindle.
It should be noted that, the processes of feeding back information to the heat source and controlling and adjusting the heat source after the temperature detector detects the temperature of the wafer are all the prior art.
As an example, as shown in the structural diagram of fig. 1, the number of the first thermometers 6 is 4, which are evenly distributed above and below the tray 3 and correspondingly detect the temperature at the center of the upper and lower surfaces of the wafer 2 and at the edges of the upper and lower surfaces of the wafer 2 (as shown by the dashed arrows in fig. 1).
It should be noted that, because the wafer 2 is in a rotating state during the epitaxial process, although the first thermometers 6 disposed above and below the tray 3 are in fixed positions, the detected temperature is actually the temperature of the circular/ring-shaped areas on the upper and lower surfaces of the wafer 2, for example, the first thermometers 6 disposed above the tray 3 for detecting the temperature at the edge of the upper surface of the wafer 2 detect the temperature of the annular area on the upper surface of the wafer 2 instead of the temperature at the local edge of the upper surface of the wafer 2, which includes the entire edge area of the upper surface of the wafer 2.
As an example, the heat source comprises a heating lamp 7 and/or an induction coil.
As an example, the heating lamps 7 include first heating lamps 8 and second heating lamps 9, the first heating lamps 8 heat inner circumferential regions 10 of the upper and lower surfaces of the wafer 2, and the second heating lamps 9 heat outer circumferential regions 11 of the upper and lower surfaces of the wafer 2, as indicated by the dashed line regions in fig. 1.
It should be noted that, as shown in fig. 2, dividing the wafer 2 into an inner ring area 10 and an outer ring area 11 for zone heating is beneficial to independently adjusting the temperatures of different areas of the wafer, and better ensures the uniformity of the temperature of the wafer.
As an example, the heating lamps 7 are disposed above and below the tray 3, and the heating lamps 7 above and below the tray 3 are continuously disposed, wherein the first heating lamps 8 are spaced apart from the second heating lamps 9.
As an example, a metal reflecting screen 12 is further provided in the second chamber 5, and the metal reflecting screen 12 is provided above and below the tray 3 in correspondence with the heating lamps 7.
It should be noted that the heating lamps 7 above and below the tray 3 may be arranged in a circular shape, corresponding to the circular metal reflecting screen 12 shown in fig. 3, wherein the metal reflecting screen 12 above the tray 3 is disposed above the heating lamps 7, and the metal reflecting screen 12 below the tray 3 is disposed below the heating lamps 7.
As an example, the metal reflective screen 12 includes a planar area 13 and a pattern area 14, the planar area 13 is spaced apart from the pattern area 14, wherein the planar area 13 corresponds to the second heating lamp 9, and the pattern area 14 corresponds to the first heating lamp 8.
It should be noted that, since the first heating lamp 8 heats the inner circle region 10 of the upper and lower surfaces of the wafer 2, the first heating lamp 8 needs to reflect energy to the inner circle region 10 of the wafer 2 through the pattern region 14 of the metal reflective screen 12; the second heating lamps 9 heat the outer circle regions 11 of the upper and lower surfaces of the wafer 2, so that the second heating lamps 9 directly irradiate the outer circle regions 11 of the corresponding wafer 2, and the corresponding metal reflecting screens 12 are planar.
As an example, a second thermo detector 15 is further provided in the second chamber 5, and the second thermo detector 15 is used to detect the temperature at the top of the first chamber 1.
It should be noted that the top and the bottom of the first chamber 1 are made of quartz material.
As an example, the silicon epitaxial chamber further comprises a driving device 16 for driving the tray 3 to rotate, the driving device 16 comprising a rotation motor.
As an example, the rotating shaft 4 is vertically disposed, and the top end of the rotating shaft 4 is connected to the tray 3 and the bottom end is connected to the driving device 16.
As an example, the wafer 2 carried by the tray 3 has one of 8 inches and 12 inches in size.
Example two:
the present embodiment provides a silicon epitaxial chamber, which has the same basic structure as that of the first embodiment, and is not repeated herein, and the difference from the first embodiment is as follows: the plurality of first thermometers 6 in this embodiment also detect the temperature at the center of the radius of the upper and lower surfaces of the wafer 2.
As an example, as shown in the structural diagram of fig. 4, the number of the first thermometers 6 is 6, which are evenly distributed above and below the tray 3, and detect the temperature at the center of the upper and lower surfaces of the wafer 2, the center of the radius of the upper and lower surfaces of the wafer 2, and the edge of the upper and lower surfaces of the wafer 2 (as shown by the dashed arrows in fig. 4).
The position of the wafer detected by the temperature detector is further refined in the embodiment, and the position comprises the center, the radius center and the edge of the upper surface and the lower surface of the wafer 2, so that the control and the adjustment of a heat source are more precise, and the consistency of the whole temperature of the wafer is more favorably improved.
Example three:
the present embodiment provides a silicon epitaxial chamber, whose basic structure is the same as that of the silicon epitaxial chamber described in any one of the first and second embodiments, and is not described herein again, and the difference between the silicon epitaxial chamber and the first and second embodiments is as follows: the tray 3 in this embodiment comprises a transparent or translucent silicon carbide tray.
Because the thermometer judges the temperature through the infrared signal that detects the material and launch, transparent material can make infrared signal see through, and opaque material can then absorb partial infrared signal, influences temperature measurement's accuracy, consequently bear the weight of the tray of wafer in this application and choose transparent or translucent carborundum material for use, can reduce the infrared signal loss of wafer lower surface by a wide margin, make the thermometer that is located the tray below can directly detect the temperature of wafer lower surface, thereby effectively guarantee the uniformity of surface temperature about the wafer.
It should be noted that silicon carbide has strong acid-base corrosion resistance and very high hardness and deformation resistance, and can greatly increase the service life of the component.
Example four:
the present embodiment provides a silicon epitaxial chamber, whose basic structure is the same as that of the silicon epitaxial chamber described in any one of the first to third embodiments, and is not described herein again, and the difference from the foregoing embodiments is as follows: the upper surface of the tray 3 in this embodiment is also provided with a heat conductive layer 17, as shown in fig. 5.
This embodiment is through increasing the heat-conducting layer between tray and wafer, utilizes the excellent heat conductivility of heat-conducting layer to transversely spread the heat to whole tray scope rapidly when heating the wafer, and then evenly conducts to the wafer lower surface, can effectively guarantee the homogeneity of wafer lower surface temperature.
As an example, the thermally conductive layer 17 includes a graphene layer.
It should be noted that the graphene has a very high thermal conductivity coefficient, and can efficiently achieve the purpose of rapid heat diffusion, and the graphene also has strong acid-base corrosion resistance, very high hardness and deformation resistance, and can greatly increase the service life of the component.
As an example, the number of graphene layers is less than 20.
It should be noted that, because each layer of graphene can cause the attenuation of transparency, the graphene layer cannot be too thick, and the graphene layer with less than 20 layers can achieve the purpose of rapid heat conduction and also avoid affecting the accuracy of the temperature measurement of the lower surface of the wafer by the temperature detector.
In summary, the utility model provides a silicon epitaxial chamber, which comprises a first chamber and a second chamber, wherein the first chamber is provided with a tray and a rotating shaft for bearing wafers; the second cavity surrounds the outside of the first cavity, a heat source and a plurality of first thermometers are arranged in the second cavity, and the plurality of first thermometers at least correspondingly detect the temperatures of the centers of the upper surface and the lower surface of the wafer and the edges of the upper surface and the lower surface of the wafer. The temperature detectors for detecting the temperatures of the upper surface and the lower surface of the wafer in different areas are additionally arranged, so that the temperature detection of the surface of the wafer is refined, the heat source can be adjusted in a targeted manner according to the detected temperature conditions of the different areas of the wafer, the consistency of the overall temperature of the wafer can be effectively improved, and the nonuniformity of the temperature of the wafer is avoided. Simultaneously the utility model discloses a tray includes transparent or translucent carborundum tray, has still set up the heat-conducting layer at the tray upper surface, can further guarantee the homogeneity of wafer temperature. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely exemplary to illustrate the structure and efficacy of the present invention, and are not intended to limit the present invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (17)
1. A silicon epitaxial chamber, comprising:
the wafer loading device comprises a first chamber, a second chamber and a third chamber, wherein a tray and a rotating shaft for bearing wafers are arranged in the first chamber, and the rotating shaft is connected with the tray so as to drive the tray to rotate;
the second cavity surrounds the outside of the first cavity, a heat source and a plurality of first thermometers are arranged in the second cavity, and the plurality of first thermometers at least correspondingly detect the temperatures of the centers of the upper surface and the lower surface of the wafer and the edges of the upper surface and the lower surface of the wafer.
2. The silicon epitaxy chamber of claim 1, wherein the first thermometers comprise 4 thermometers equally distributed above and below the tray for detecting the temperature at the center of the top and bottom surfaces of the wafer and at the edges of the top and bottom surfaces of the wafer.
3. The silicon epitaxy chamber of claim 1, wherein the plurality of first thermometers further detect a temperature at a center of a radius of the top and bottom surfaces of the wafer.
4. The silicon epitaxy chamber of claim 3, wherein the first thermometers comprise 6 thermometers equally distributed above and below the tray to detect the temperature at the center of the top and bottom surfaces of the wafer, the center of the radius of the top and bottom surfaces of the wafer, and the edge of the top and bottom surfaces of the wafer.
5. The silicon epitaxy chamber of claim 1, wherein the tray comprises a transparent or translucent silicon carbide tray.
6. The silicon epitaxy chamber of claim 1, wherein the upper surface of the tray is further provided with a thermally conductive layer.
7. The silicon epitaxy chamber of claim 6, wherein the thermally conductive layer comprises a layer of graphene.
8. The silicon epitaxy chamber of claim 7, wherein the number of graphene layers is less than 20.
9. The silicon epitaxy chamber of claim 1, wherein the heat source comprises a heating lamp and/or an induction coil.
10. The silicon epitaxy chamber of claim 9, wherein the heat lamps comprise first heat lamps that heat inner regions of the top and bottom surfaces of the wafer and second heat lamps that heat outer regions of the top and bottom surfaces of the wafer.
11. The silicon epitaxy chamber of claim 10, wherein the heating lamps are disposed above and below the tray and the heating lamps above and below the tray are disposed in series, wherein the first heating lamp is spaced apart from the second heating lamp.
12. The silicon epitaxy chamber of claim 11, wherein a metal reflective screen is further disposed in the second chamber, the metal reflective screen corresponding to the heating lamps and disposed above and below the tray.
13. The silicon epitaxy chamber of claim 12, wherein the metallic reflective screen comprises a planar region and a patterned region, the planar region spaced apart from the patterned region, wherein the planar region corresponds to the second heat lamp and the patterned region corresponds to the first heat lamp.
14. The silicon epitaxy chamber of claim 1, wherein a second temperature probe is further disposed in the second chamber and configured to detect a temperature at a top of the first chamber.
15. The silicon epitaxy chamber of claim 1, further comprising a drive means for driving rotation of the tray, the drive means comprising a rotation motor.
16. The silicon epitaxy chamber of claim 15, wherein the shaft is vertically disposed, and a top end of the shaft is connected to the tray and a bottom end of the shaft is connected to the drive mechanism.
17. The silicon epitaxy chamber of claim 1, wherein the wafers carried by the tray are one of 8 inches and 12 inches in size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020475826.4U CN212316285U (en) | 2020-04-03 | 2020-04-03 | Silicon epitaxial chamber |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020475826.4U CN212316285U (en) | 2020-04-03 | 2020-04-03 | Silicon epitaxial chamber |
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| CN212316285U true CN212316285U (en) | 2021-01-08 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114959879A (en) * | 2022-04-28 | 2022-08-30 | 深圳技术大学 | Anti-sintering single crystal furnace and single crystal preparation method |
| WO2023179195A1 (en) * | 2022-03-23 | 2023-09-28 | 无锡华瑛微电子技术有限公司 | Semiconductor processing device, semiconductor processing system, and semiconductor edge positioning method |
-
2020
- 2020-04-03 CN CN202020475826.4U patent/CN212316285U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023179195A1 (en) * | 2022-03-23 | 2023-09-28 | 无锡华瑛微电子技术有限公司 | Semiconductor processing device, semiconductor processing system, and semiconductor edge positioning method |
| CN114959879A (en) * | 2022-04-28 | 2022-08-30 | 深圳技术大学 | Anti-sintering single crystal furnace and single crystal preparation method |
| CN114959879B (en) * | 2022-04-28 | 2023-11-03 | 深圳技术大学 | Anti-sintering single crystal furnace and single crystal preparation method |
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