CN212305286U - DC-40GHz broadband PIN single-pole triple-throw switch - Google Patents

DC-40GHz broadband PIN single-pole triple-throw switch Download PDF

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Publication number
CN212305286U
CN212305286U CN202021231088.5U CN202021231088U CN212305286U CN 212305286 U CN212305286 U CN 212305286U CN 202021231088 U CN202021231088 U CN 202021231088U CN 212305286 U CN212305286 U CN 212305286U
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radio frequency
diode
series
parallel
diodes
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CN202021231088.5U
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Chinese (zh)
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胡译文
黄军恒
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Hefei Silicon Valley Microelectronics Co.,Ltd.
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Hefei Ic Valley Microelectronics Co ltd
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Abstract

The utility model discloses a DC-40GHz broadband PIN single-pole triple-throw switch, which comprises a radio frequency input public signal end, wherein the radio frequency input public signal end is connected with a series diode and is used for transmitting a radio frequency signal to a circuit; the three radio frequency output signal ends are respectively connected with the series diode and the parallel diode and are used for receiving the output RF radio frequency signals; the series diode and the parallel diode are used for conducting the RF signal sent by the radio frequency input common signal end to the radio frequency output signal end or to the ground; direct current bias, direct current is connected with series diode and parallel diode on the contrary for control it switches on or ends, the utility model discloses can realize single-pole triple-throw's effect, choose the structure of establishing ties and parallelly connected combination for use, insertion loss is low, power capacity and isolation are high, and the multitube is established ties and the parallelly connected diode of multitube adopts same direct current bias, saves the power of switch.

Description

DC-40GHz broadband PIN single-pole triple-throw switch
Technical Field
The utility model relates to a PIN switch technical field specifically is a DC-40GHz broadband PIN single-pole triple-throw switch.
Background
Traditional PIN switch circuit adopts GaAs PIN technology to make, traditional GaAs technology switch insertion loss is bigger, can constitute a simple single-pole three-throw switch with parallelly connected and the mode of establishing ties, series switch has the advantage of transmitting low loss in the broadband scope, but the isolation is relatively poor, and parallel switch mainly is used for the application of great isolation, current PIN single-pole three-throw switch, it is difficult to make the compromise between bandwidth and isolation, isolation and insertion loss are difficult to balance, and the bearing capacity of power is limited, DC offset's power demand is big.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a DC-40GHz broadband PIN single-pole triple-throw switch to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme:
a DC-40GHz broadband PIN single pole triple throw switch comprising:
a radio frequency input common signal terminal connected to the series diode for inputting a radio frequency signal to the circuit,
the three radio frequency output signal ends are respectively connected with the series diode and the parallel diode and are used for receiving the output RF radio frequency signals;
the series diode and the parallel diode are used for conducting the RF signal sent by the radio frequency input common signal end to the radio frequency output signal end or to the ground; and;
and the direct current bias is connected with the series diode and the parallel diode and used for controlling the on or off of the series diode and the parallel diode.
And the series diodes and the parallel diodes are provided with three groups.
Preferably, the series diodes and the parallel diodes are provided with three groups.
Preferably, the series diode is formed by connecting two PIN diodes in series, and the parallel diode is formed by connecting three PIN diodes in parallel.
Preferably, the direct current bias is provided with three groups, and the three groups of diodes in series connection and the three groups of diodes in parallel connection are respectively controlled.
Preferably, an inductor and a capacitor for choke and filtering are connected to the output of the dc bias.
Preferably, the radio frequency input common signal end is connected with a resistor, a capacitor and an inductor for matched filtering.
Preferably, the output of the direct current bias is bias voltage of +5V and-5V, and 10mA driving current is provided.
Compared with the prior art, the beneficial effects of the utility model are that:
the PIN single-pole three-throw switch with the input/output end matched with 50 ohms and the frequency range covering DC-40GHz and-5V/+ 5V control is provided, the GaAs PIN process design is adopted, the topological structure of the switch, the size and the working state of a PIN diode are reasonably selected, and the matching circuit is optimized.
The circuit comprises series diodes and diodes connected to the ground in parallel, the isolation degree and the power capacity of the product are improved by increasing the number of the diodes, the size of the diodes is optimized in order to reduce the insertion loss of the product, and the product has excellent switching characteristics and port standing wave characteristics in the whole working frequency range.
The utility model discloses the circuit is compared with traditional switch, has obviously reduced and has inserted the loss, has improved power capacity.
Drawings
FIG. 1 is a schematic diagram of the circuit assembly of the present invention;
FIG. 2 is a schematic circuit diagram of the present invention;
FIG. 3 is an insertion loss test chart of the circuit of the present invention;
FIG. 4 is a graph of the isolation test of the circuit of the present invention;
FIG. 5 is a test chart of the input reflection coefficient of the circuit of the present invention;
FIG. 6 is a graph showing the output reflectance test of the circuit of the present invention;
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-2, IN (J1) is a common signal terminal for rf input, OUT1(J2), OUT2(J3) and OUT3(J3) are signal terminals for rf output, J1, J2, J3 and J4 need to be provided with DC blocking capacitors, and the series diodes and the parallel diodes are controlled by +5V/-5V to provide 10mA driving current. J2 is biased at-5V (10mA), J3 and J4 are biased at +5V (10mA), J1 provides relative ground, the series diode D1 is conducted, the parallel diode D2 is cut off, the radio frequency terminals J2-J1 are in a conducting low-insertion-loss state, the series diodes D3 and D5 are cut off, the parallel diode D4 and D6 are conducted to ground, the radio frequency terminals J3-J1 and J4-J1 are in a disconnecting high-isolation state, and similarly, when J3 is biased at-5V (10mA), and J2 and J4 are biased at +5V (10mA), the radio frequency terminals J3-J1 are in a conducting low-insertion-loss state, and the radio frequency terminals J2-J1 and J4-J1 are in a disconnecting high-isolation state; when J4 is biased at-5V (10mA), J2 and J3 are biased at +5V, the radio frequency terminals J4-J1 are in an on low insertion loss state, and the radio frequency terminals J2-J1 and J3-J1 are in an off high isolation state.
The present invention is further described below with reference to fig. 1:
1. the topological structure requirement of select switch makes the compromise between bandwidth and isolation, and series switch has the advantage of transmitting low loss in the broadband within range, but the isolation is relatively poor, and in the application of parallel switch mainly used great isolation, the utility model discloses choose the structure of establishing ties and parallelly connected combination for use.
2. The number and size of the diodes connected in series have a large influence on the insertion loss, power capacity and frequency band of the switch, and therefore, the compromise needs to be optimized. The design adopts a multi-tube series connection mode, two PIN diodes are selected and connected in series, and low insertion loss and high power capacity are guaranteed.
3. The number and the size of the parallel diodes have great influence on the isolation, the design adopts a multi-tube parallel connection mode, three PIN diodes are selected and connected in parallel, and low insertion loss and high isolation are ensured.
4. To save switching power, the diodes in series and parallel use the same bias.
Specifically, the present invention is further described below with reference to fig. 1-2:
1. in the embodiment, three paths are J1-J2, J1-J3 and J1-J4 respectively, the three paths all have series diodes and parallel diodes, the series diodes D1, D3 and D5 all represent series structures of two PIN diodes, and the parallel diodes D2, D4 and D6 all represent parallel structures of three PIN diodes, so that low insertion loss, high isolation and high power capacity are ensured.
2. The inductors L2, L3, and L5 are connected in series in the dc bias circuit, and function as a power filter choke to smoothly rectify a dc component and reduce ripple voltage.
3. The capacitors C2, C3 and C5 are filter capacitors, one ends of C2, C3 and C5 are grounded, and the other ends are respectively connected with the direct current biases DC1, DC2 and DC3 to play a role of low-pass filtering.
4. One end of the resistor R1 is grounded, the inductor L1 is connected with the resistor R1 in series, and the capacitor C1 is connected with the resistor R1 in parallel to form a low-pass filter together, so that the matched filtering function is achieved.
According to the circuit structure shown in the figures 1-2, after proper optimization and matching, the practical test results of the designed DC-40GHz broadband PIN single-pole triple-throw switch are shown in figures 3-6
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (7)

1. A DC-40GHz broadband PIN single pole triple throw switch, comprising:
the radio frequency input common signal end is connected with the series diode and is used for inputting a radio frequency signal to the circuit;
the three radio frequency output signal ends are respectively connected with the series diode and the parallel diode and are used for receiving the output RF radio frequency signals;
the series diode and the parallel diode are used for conducting the RF signal sent by the radio frequency input common signal end to the radio frequency output signal end or to the ground; and
and the direct current bias is connected with the series diode and the parallel diode and used for controlling the on or off of the series diode and the parallel diode.
2. The DC-40GHz broadband PIN single pole triple throw switch of claim 1, wherein: and the series diodes and the parallel diodes are provided with three groups.
3. The DC-40GHz broadband PIN single pole triple throw switch of claim 2, wherein: the series diode is formed by connecting two PIN diodes in series, and the parallel diode is formed by connecting three PIN diodes in parallel.
4. The DC-40GHz broadband PIN single pole triple throw switch of claim 2, wherein: the direct current bias is provided with three groups which respectively control three groups of series diodes and three groups of parallel diodes.
5. The DC-40GHz broadband PIN single pole triple throw switch according to claim 4, wherein: and the output of the direct current bias is connected with an inductor and a capacitor for choking and filtering.
6. The DC-40GHz broadband PIN single pole triple throw switch of claim 1, wherein: and the radio frequency input common signal end is connected with a resistor, a capacitor and an inductor for matched filtering.
7. The DC-40GHz broadband PIN single pole triple throw switch according to any of claims 1-6, wherein: the output of the direct current bias is bias voltage of +5V and-5V, and 10mA driving current is provided.
CN202021231088.5U 2020-06-29 2020-06-29 DC-40GHz broadband PIN single-pole triple-throw switch Active CN212305286U (en)

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Application Number Priority Date Filing Date Title
CN202021231088.5U CN212305286U (en) 2020-06-29 2020-06-29 DC-40GHz broadband PIN single-pole triple-throw switch

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116827321A (en) * 2023-08-28 2023-09-29 中国电子科技集团公司第二十九研究所 Switch and resistor-based switch routing circuit and application method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116827321A (en) * 2023-08-28 2023-09-29 中国电子科技集团公司第二十九研究所 Switch and resistor-based switch routing circuit and application method thereof
CN116827321B (en) * 2023-08-28 2023-12-05 中国电子科技集团公司第二十九研究所 Switch and resistor-based switch routing circuit and application method thereof

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Address after: 230088 building e, Anhui scientific and technological achievements transformation demonstration base, No. 425, Chuangxin Avenue, high tech Zone, Hefei, Anhui

Patentee after: Hefei Silicon Valley Microelectronics Co.,Ltd.

Address before: Room 1001-1002, F1 building, phase II, innovation industrial park, 2800 innovation Avenue, high tech Zone, Hefei City, Anhui Province, 230088

Patentee before: HEFEI IC VALLEY MICROELECTRONICS Co.,Ltd.