CN212303604U - Plasma etching device for improving etching uniformity - Google Patents
Plasma etching device for improving etching uniformity Download PDFInfo
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- CN212303604U CN212303604U CN202021097935.3U CN202021097935U CN212303604U CN 212303604 U CN212303604 U CN 212303604U CN 202021097935 U CN202021097935 U CN 202021097935U CN 212303604 U CN212303604 U CN 212303604U
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Abstract
The utility model discloses a plasma etching device for improving etching uniformity, which comprises a process chamber and a lower electrode; the lower electrode is connected with the upper end face of a bottom plate of the process chamber; further comprising a plurality of lower process gas channels; the gas inlet port of the lower process gas channel is positioned outside the process chamber; and the gas outlet port of the lower process gas channel is close to the outer edge of the upper end face of the lower electrode. The utility model passes through the lower process gas channel; the process gas is supplied towards the periphery of the outer edge of the upper end face of the lower electrode, the gas supply amount of the process gas at the edge of the lower electrode is increased, the etching speed at the edge of the lower electrode is accelerated, the etching speed of the edge area of the lower electrode is close to that of the central area of the lower electrode, and the etching uniformity is improved.
Description
Technical Field
The utility model belongs to the technical field of semiconductor processing equipment, especially, relate to a plasma etching device for improving sculpture homogeneity.
Background
Referring to fig. 1, in a conventional plasma etching apparatus, a lower electrode 2 is installed at the center of the lower part of a process chamber 1, and a radio frequency power supply assembly is connected to the upper surface of the lower electrode 2 to perform a bias action for plasma etching. In the upper part of the process chamber 1 are a chamber cover 5 and a coupling window 6 placed in the upper part of the chamber cover 5. An air inlet nozzle 7 is arranged in the center of the coupling window 6, a plurality of air inlet holes are arranged in the air inlet nozzle 7, and the process gas is sprayed out of the air inlet nozzle 7 and enters the inside of the process chamber 1 to form a middle air inlet flow. A coil assembly 8 is mounted on the upper portion of the coupling window 6 and is connected to an upper rf power supply 9 on the top to provide power to ignite a plasma for the process in the chamber. In some plasma etching apparatuses, a plurality of vent holes facing the process chamber 1 are also arranged in the chamber cover 5, and process gas is ejected from the vent holes and enters the process chamber 1 to form edge gas inflow.
The larger the lower electrode 2 is, the larger the size of the wafer which can be etched is, the larger the number of wafers which can be placed is, and the production efficiency can be improved. However, the closer to the edge of the lower electrode 2, the less plasma, so the larger the lower electrode 2, the worse the etching uniformity, which usually shows that the etching speed is slow in the area near the edge of the lower electrode and the etching speed is fast in the central area of the lower electrode. There are two general solutions: the first method is that the lower electrode 2 is heated in a subarea way, so that the temperature of the edge area of the lower electrode 2 is higher than that of the central area, and the etching speed of the edge area and the etching speed of the central area are balanced; however, the lower electrode 2 is usually a metal with relatively fast heat conduction, the zone heating is very difficult to distinguish, the temperature difference is limited, and the compensation capability for the etching speed difference is limited; the second is that a plurality of radio frequency power supplies are connected to the lower electrode 2, the scheme is only suitable for a capacitive coupling etching machine, and for an inductive coupling etching machine, the lower electrode only has one radio frequency power supply, and the scheme is not suitable for use.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, the utility model provides a plasma etching device for improving sculpture homogeneity, the process gas air supply at increase bottom electrode edge for the sculpture speed at bottom electrode edge improves the sculpture homogeneity.
The technical scheme is as follows: the utility model provides a plasma etching device for improving etching uniformity, which comprises a process chamber and a lower electrode; the lower electrode is connected with the upper end face of a bottom plate of the process chamber; further comprising a plurality of lower process gas channels; the gas inlet port of the lower process gas channel is positioned outside the process chamber; and the gas outlet port of the lower process gas channel is close to the outer edge of the upper end face of the lower electrode.
Furthermore, a protection ring is sleeved on the periphery of the side wall of the lower electrode; and a gap is formed between the inner wall of the protection ring and the side wall of the lower electrode.
Furthermore, the lower process gas channel opening is arranged on the lower electrode and the bottom plate of the process chamber;
further, the gas outlet port of the lower process gas channel is positioned on the side wall of the lower electrode.
Further, an insulating pad is arranged between the lower electrode and the upper end face of the bottom plate of the process chamber; the lower process gas channel openings are disposed in the lower electrode, the insulating pad, and the bottom plate of the process chamber.
Further, the lower process gas channel is only provided with an opening on the bottom plate of the process chamber; and the gas outlet port of the lower process gas channel is positioned on the upper end surface of the bottom plate of the process chamber and is close to the side wall of the lower electrode.
Further, the lower process gas channel is only provided with an opening on the bottom plate of the process chamber; and the gas outlet port of the lower process gas channel is positioned on the upper end surface of the bottom plate of the process chamber and is positioned in a gap between the inner wall of the protection ring and the side wall of the lower electrode.
Further, a bottom plate of the process chamber is provided with a mounting hole; the lower end face of the outer edge of the lower electrode is connected with the upper end face of a bottom plate of the process chamber; the center of the lower electrode is positioned right above the mounting hole; the lower process gas channel is only provided with an opening on the lower electrode; the gas inlet port of the lower process gas channel is located on the lower end face of the center of the lower electrode.
Further, the gas outlet port of the lower process gas channel is positioned on the side wall of the lower electrode.
Further, a vacuum pump is arranged on the side wall of the process chamber; the number of the air outlet ports of the lower process gas channel close to the side where the vacuum pump is located is more than that of the air outlet ports of the lower process gas channel far away from the side where the vacuum pump is located.
Has the advantages that: the utility model passes through the lower process gas channel; the process gas is supplied towards the periphery of the outer edge of the upper end face of the lower electrode, the gas supply amount of the process gas at the edge of the lower electrode is increased, the etching speed at the edge of the lower electrode is accelerated, the etching speed of the edge area of the lower electrode is close to that of the central area of the lower electrode, and the etching uniformity is improved.
Drawings
FIG. 1 is a schematic structural diagram of a conventional plasma etching apparatus;
fig. 2 is a schematic structural diagram of a first embodiment of the present invention;
fig. 3 is a schematic structural view of a second embodiment of the present invention;
fig. 4 is a schematic structural view of a third embodiment of the present invention;
fig. 5 is a top view of the present invention.
Detailed Description
Referring to fig. 1, the present invention provides a plasma etching apparatus for improving etching uniformity, including a process chamber 1 and a lower electrode 2; the lower electrode 2 is connected with the upper end face of the bottom plate of the process chamber 1; an insulating pad 11 is arranged between the lower electrode 2 and the upper end face of the bottom plate of the process chamber 1, so that the charged lower electrode 2 is prevented from being conducted with the process chamber 1, and the process chamber 1 is charged.
And a tray 3 is arranged above the lower electrode 2, and the wafer is placed on the tray 3.
The utility model also comprises a plurality of lower process gas channels 4; the gas inlet port 401 of the lower process gas channel 4 is positioned outside the process chamber 1 and connected with gas supply equipment; the gas outlet port 402 of the lower process gas channel 4 is close to the outer edge of the upper end face of the lower electrode 2.
The gas outlet ports 402 of the lower process gas channels 4 are annularly distributed around the lower electrode 2, and may be uniformly distributed.
When the vacuum pump 12 is disposed on the sidewall of the process chamber 1, the process gas flow is not uniform due to the pumping of one side of the vacuum pump 12, and the area of the wafer near the vacuum pump 12 is not sufficiently contacted with the process gas. At this time, as shown in fig. 5, the number of the gas outlet ports 402 of the lower process gas channel 4 near the side where the vacuum pump 12 is located may be greater than the number of the gas outlet ports 402 of the lower process gas channel 4 far away from the side where the vacuum pump 12 is located, so that the process gas around the wafer is uniformly distributed.
The outer periphery of the side wall of the lower electrode 2 is sleeved with a protection ring 10 for protecting the side wall of the lower electrode 2 from being corroded by plasma. A gap is arranged between the inner wall of the protection ring 10 and the side wall of the lower electrode 2. The gap between the sidewall of the lower electrode 2 and the inner wall of the guard ring 10 is adjusted according to the actual process, and the gap between the two is generally 0.1-2 mm.
The utility model provides following three kinds of preferred embodiments:
the first embodiment,
Referring to FIG. 2, the lower process gas channel 4 is perforated in the lower electrode 2, the insulating pad 11 and the bottom plate of the process chamber 1.
Wherein, the gas inlet port 402 of the lower process gas channel 4 is positioned on the outer wall of the process chamber 1 and connected with a gas supply device.
The gas outlet port 402 of the lower process gas channel 4 may be disposed on the outer edge of the sidewall or the upper end surface of the lower electrode 2. When the gas outlet port 402 of the lower process gas channel 4 is arranged at the outer edge of the upper end face, not only the space of the upper end face of the lower electrode 2 is occupied, but also the etching pollution of the gas outlet port 402 is increased.
Therefore, it is preferable that the gas outlet port 402 of the lower process gas channel 4 is located at the sidewall of the lower electrode 2.
The process gas flows through the lower electrode 2, the insulating pad 11 and the opening on the bottom plate of the process chamber 1 in sequence, and flows to the outer edge of the lower electrode 2 along the gap between the inner wall of the protection ring 10 and the side wall of the lower electrode 2 after being exhausted through the gas outlet port 402 arranged on the side wall of the lower electrode 2. The gap between the inner wall of the guard ring 10 and the sidewall of the lower electrode 2 plays a role in guiding flow, so that the process gas is more concentrated on the outer edge of the lower electrode 2.
The second embodiment,
As shown in fig. 3, the lower process gas channel 4 is provided only with openings in the bottom plate of the process chamber 1; the gas outlet 402 of the lower process gas channel 4 is located at the upper end surface of the bottom plate of the process chamber 1 and at the gap between the inner wall of the guard ring 10 and the sidewall of the lower electrode 2.
The process gas flows through the lower process gas channel 4, is discharged through the gas outlet port 402 located on the upper end surface of the bottom plate of the process chamber 1, and then flows to the outer edge of the lower electrode 2 along the gap between the inner wall of the guard ring 10 and the sidewall of the lower electrode 2. The gap between the inner wall of the guard ring 10 and the sidewall of the lower electrode 2 plays a role in guiding flow, so that the process gas is more concentrated on the outer edge of the lower electrode 2.
The third embodiment,
As shown in fig. 4, a bottom plate of the process chamber 1 is provided with a mounting hole; the lower end surface of the outer edge of the lower electrode 2 is connected with the upper end surface of the bottom plate of the process chamber 1; the center of the lower electrode 2 is positioned right above the mounting hole and is connected with the outside atmosphere. The lower process gas channel 4 is only provided with holes on the lower electrode 2; the gas inlet port 401 of the lower process gas channel 4 is located at the lower end surface at the center of the lower electrode 2.
Likewise, it is preferable that the gas outlet port 402 of the lower process gas channel 4 is located at the sidewall of the lower electrode 2.
The process gas flows from the process gas channel 4 to the outer edge of the lower electrode 2 along the gap between the inner wall of the guard ring 10 and the sidewall of the lower electrode 2 after being discharged through the gas outlet port 402 formed in the sidewall of the lower electrode 2. The gap between the inner wall of the guard ring 10 and the sidewall of the lower electrode 2 plays a role in guiding flow, so that the process gas is more concentrated on the outer edge of the lower electrode 2.
The lower process gas channel 4 can be selected by the following gas inlet methods:
firstly, gas with a higher etching speed, such as SF6, CF4, Cl2 and other etching gases with stronger etching capability, is introduced into the lower process gas channel 4, and one or more gases with weaker etching capability, such as CF4, CHF3, C4F8 and the like, are introduced into the gas inlet nozzle 7 for upper gas inlet and the gas inlet channel of the cavity cover 5; thus, the etching rate at the center is reduced, and the etching rate at the edge is increased, thereby achieving balance.
Secondly, process gas can be introduced into the lower process gas channel 4 for a period of time, the time is used for compensating the condition of slow etching speed, and the etching time of the part is usually 30-120 s; then the gas input is stopped, and the process gas is introduced from the gas inlet nozzle 7 and the cavity cover 5, so that the overall balance is achieved, and the etching effect of the edge is consistent with that of the center.
Thirdly, after the etching gas is introduced into the gas inlet nozzle 7 and the cavity cover 5 for etching, only the reaction gas is introduced into the lower process gas channel 4 for etching, so that the etching time of the edge area is prolonged, and the same etching effect as that of the central area is achieved.
Claims (10)
1. A plasma etching apparatus for improving etching uniformity includes a process chamber (1) and a lower electrode (2); the lower electrode (2) is connected with the upper end face of the bottom plate of the process chamber (1); the method is characterized in that: further comprising a plurality of lower process gas channels (4); the gas inlet port (401) of the lower process gas channel (4) is located outside the process chamber (1); and the gas outlet port (402) of the lower process gas channel (4) is close to the outer edge of the upper end face of the lower electrode (2).
2. The plasma etching apparatus for improving etching uniformity according to claim 1, characterized in that: a protective ring (10) is sleeved on the periphery of the side wall of the lower electrode (2); and a gap is formed between the inner wall of the protection ring (10) and the side wall of the lower electrode (2).
3. The plasma etching apparatus for improving etching uniformity according to claim 1 or 2, characterized in that: the lower process gas channel (4) is provided with an opening at the bottom electrode (2) and the bottom plate of the process chamber (1).
4. The plasma etching apparatus for improving etching uniformity according to claim 3, characterized in that: the gas outlet port (402) of the lower process gas channel (4) is positioned on the side wall of the lower electrode (2).
5. The plasma etching apparatus for improving etching uniformity according to claim 4, wherein: an insulating pad (11) is arranged between the lower electrode (2) and the upper end face of the bottom plate of the process chamber (1); the lower process gas channel (4) is provided with openings on the lower electrode (2), the insulating pad (11) and the bottom plate of the process chamber (1).
6. The plasma etching apparatus for improving etching uniformity according to claim 1, characterized in that: the lower process gas channel (4) is only provided with holes on the bottom plate of the process chamber (1); and the gas outlet port (402) of the lower process gas channel (4) is positioned on the upper end surface of the bottom plate of the process chamber (1) and is close to the side wall of the lower electrode (2).
7. The plasma etching apparatus for improving etching uniformity according to claim 2, characterized in that: the lower process gas channel (4) is only provided with holes on the bottom plate of the process chamber (1); and the gas outlet port (402) of the lower process gas channel (4) is positioned on the upper end surface of the bottom plate of the process chamber (1) and is positioned in a gap between the inner wall of the protection ring (10) and the side wall of the lower electrode (2).
8. The plasma etching apparatus for improving etching uniformity according to claim 1 or 2, characterized in that: a mounting hole is formed in a bottom plate of the process chamber (1); the lower end surface of the outer edge of the lower electrode (2) is connected with the upper end surface of the bottom plate of the process chamber (1); the center of the lower electrode (2) is positioned right above the mounting hole; the lower process gas channel (4) is only provided with holes on the lower electrode (2); the gas inlet port (401) of the lower process gas channel (4) is located on the lower end face of the center of the lower electrode (2).
9. The plasma etching apparatus for improving etching uniformity according to claim 8, wherein: the gas outlet port (402) of the lower process gas channel (4) is positioned on the side wall of the lower electrode (2).
10. The plasma etching apparatus for improving etching uniformity according to claim 1, characterized in that: a vacuum pump (12) is arranged on the side wall of the process chamber (1); the number of the gas outlet ports (402) of the lower process gas channel (4) close to the side where the vacuum pump (12) is located is larger than the number of the gas outlet ports (402) of the lower process gas channel (4) far away from the side where the vacuum pump (12) is located.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021097935.3U CN212303604U (en) | 2020-06-15 | 2020-06-15 | Plasma etching device for improving etching uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021097935.3U CN212303604U (en) | 2020-06-15 | 2020-06-15 | Plasma etching device for improving etching uniformity |
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| Publication Number | Publication Date |
|---|---|
| CN212303604U true CN212303604U (en) | 2021-01-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021097935.3U Active CN212303604U (en) | 2020-06-15 | 2020-06-15 | Plasma etching device for improving etching uniformity |
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| Country | Link |
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| CN (1) | CN212303604U (en) |
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- 2020-06-15 CN CN202021097935.3U patent/CN212303604U/en active Active
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