Well site sensor battery voltage stabilizing module
Technical Field
The utility model belongs to the technical field of well site sensor corollary equipment, especially, relate to a well site sensor battery voltage stabilizing module.
Background
Along with the continuous improvement of the degree of information popularization of each management area of an oil production plant, the number of sensor devices used by the existing oil production plant is more and more. The existing sensor equipment adopts a high-capacity lithium battery as a power supply configuration to support the long-term work of the sensor equipment under the severe outdoor conditions. However, after research, the inventor finds that the lithium sub-battery used by the existing sensor device is a disposable non-rechargeable battery; although the sensor has the characteristics of high capacity, wide use environment, small self-discharge and the like, the sensor also has the defects of voltage lag and quick low-temperature capacity attenuation, and the instability of a transmission signal of the sensor equipment can be caused due to the unstable output of a battery in the use process of the field environment, so that a series of work such as oil well pressure and indicator diagram acquisition of an oil production plant is influenced. And the battery can only be replaced by a new battery (the battery capacity is consumed about 1/3) to ensure the communication efficiency when the battery power is not exhausted, which causes great waste of materials and increase of manual maintenance cost.
SUMMERY OF THE UTILITY MODEL
The utility model provides a well site sensor battery voltage stabilizing module, this well site sensor battery voltage stabilizing module's electrical apparatus compact structure, throughput is powerful, has stronger interference killing feature, can effectively improve well site sensor battery's stability and fully exhaust until its electric quantity.
In order to solve the technical problem, the utility model adopts the following technical scheme:
a well site sensor battery voltage stabilizing module comprises:
a voltage input terminal and a voltage output terminal; the positive end of the voltage input end is connected with the voltage output end of the well site sensor battery to be stabilized, and the negative end of the voltage input end is grounded; the positive end of the voltage output end outputs the voltage of the sensor battery after voltage stabilization treatment, and the negative end of the voltage output end is grounded;
a boosting voltage stabilizing circuit consisting of a boosting inductor L1 and a boosting rectifier diode D1, and a current detection resistor R5; the boosting inductor L1, the boosting rectifier diode D1 and the current detection resistor R5 are sequentially and successively arranged between the positive end of the voltage input end and the positive end of the voltage output end;
a first MOS transistor Q1; the source electrode of the first MOS tube Q1 is connected with the positive end of the voltage input end, and the drain electrode of the first MOS tube Q1 is connected with the positive end of the voltage output end through a current detection resistor R5;
the boost control module, the microprocessor and the current detection module are connected;
the boost control module is a chip with the model number of MST 9220B; the SW pin of the MST9220B chip is arranged between the boosting inductor L1 and the boosting rectifying diode D1, the IN pin of the MST9220B chip is connected with the positive terminal of the voltage input end, and the GND pin of the MST9220B chip is grounded;
the microprocessor selects a chip with the model number of STM32F030F4P 6; a BOOT0 pin of an STM32F030F4P6 chip is connected with the positive terminal of a voltage input end through a current-limiting resistor R3, a VDD pin of a TM32F030F4P6 chip is connected with the positive terminal of the voltage input end, a VSS pin of the STM32F030F4P6 chip is grounded, a PA0 pin of the STM32F030F4P6 chip is connected with a grid electrode of a first MOS tube Q1, a PA1 pin of the STM32F030F4P6 chip is connected with the positive terminal of the voltage input end, a PA5 pin of the STM32F030F4P6 chip is connected with a low-voltage indicator light LED1 through a current-limiting resistor R1, and a PA14 pin of the STM32F030F4P6 chip is connected with an EN pin of the MST9220B chip;
the current detection module selects a chip with the model number INA 180; the IN + pin of the INA180 chip is connected with one end, away from the positive terminal of the voltage output end, of the current detection resistor R5, the IN-pin of the INA180 chip is connected with one end, close to the positive terminal of the voltage output end, of the current detection resistor R5, the VS pin of the INA180 chip is connected with the positive terminal of the voltage input end, the GND pin of the INA180 chip is grounded, and the OUT pin of the INA180 chip is connected with the PA6 pin of the STM32F030F4P6 chip.
Further preferably, the method further comprises the following steps: a voltage feedback resistor R6 and a voltage feedback resistor R7;
the FB pin of the MST9220B chip is connected to the output of the boost rectifier diode D1 through a voltage feedback resistor R6, and the FB pin of the MST9220B chip is connected to ground through a voltage feedback resistor R7.
Preferably, the VDDA pin of the TM32F030F4P6 chip is connected to the positive terminal of the voltage input.
Preferably, the method further comprises the following steps: a controllable voltage regulator source; the controllable voltage-stabilizing source is a chip with the model number of TL 431;
the PA2 end of the TM32F030F4P6 chip is connected with the cathode of the TL431 chip through a current limiting resistor R4, and the anode of the TL431 chip is grounded; the PA3 pin of the TM32F030F4P6 chip is connected to the reference pole of the TL431 chip.
Optionally, a second MOS transistor Q2 is further included; the second MOS tube Q2 is arranged between the boosting voltage stabilizing circuit and the current detection resistor R5; the source of the second MOS transistor Q2 is connected to the output side of the boost rectifier diode D1, and the drain of the second MOS transistor Q2 is connected to the drain of the first MOS transistor Q1; the gate of the second MOS transistor Q2 is connected to the PA13 pin of the STM32F030F4P6 chip.
Optionally, a front-end voltage-stabilizing filter capacitor C1; two ends of the front-end voltage-stabilizing filter capacitor C1 are respectively connected with the positive terminal and the grounding terminal of the voltage input end.
Optionally, a back-end voltage stabilizing filter capacitor C2; two ends of the rear-end voltage-stabilizing filter capacitor C2 are respectively connected with the positive terminal and the grounding terminal of the voltage output end.
Optionally, the resistance value of the current detection resistor R5 is not greater than 0.1 Ω.
The utility model provides a well site sensor battery voltage stabilizing module, this well site sensor battery voltage stabilizing module are including voltage input end, voltage output end, voltage stabilizing circuit, current detection resistance R5, first MOS pipe Q1, boost control module, microprocessor and current detection module etc. circuit constitutional unit. The well site sensor battery voltage stabilizing module with the circuit structure characteristics has the advantages that the industrial embedded chip is adopted in the well site sensor battery voltage stabilizing module, the electric appliance is compact in structure, strong in processing capacity and strong in anti-interference capacity, and the stability of the well site sensor battery can be effectively improved until the electric quantity of the well site sensor battery is fully exhausted.
Drawings
Fig. 1 is the utility model provides a well site sensor battery voltage regulator module's circuit schematic.
Detailed Description
The utility model provides a well site sensor battery voltage stabilizing module, this well site sensor battery voltage stabilizing module's electrical apparatus compact structure, throughput is powerful, has stronger interference killing feature, can effectively improve well site sensor battery's stability and fully exhaust until its electric quantity.
Example one
The utility model provides a well site sensor battery voltage stabilizing module, as shown in FIG. 1, voltage input end, voltage output end. Specifically, the positive end of the voltage input end is connected with the voltage output end of the well site sensor battery to be stabilized, and the negative end of the voltage input end is grounded; the positive end of the voltage output end outputs the voltage of the sensor battery after voltage stabilization treatment, and the negative end of the voltage output end is grounded.
A boost voltage regulator circuit, and a current sense resistor R5. The voltage boosting rectifier diode comprises a voltage boosting inductor L1 and a voltage boosting rectifier diode D1, wherein the voltage boosting inductor L1, the voltage boosting rectifier diode D1 and a current detection resistor R5 are sequentially and successively arranged between the positive end of a voltage input end and the positive end of a voltage output end.
The first MOS transistor Q1. The first MOS tube Q1 is connected in parallel with the boost voltage stabilizing circuit; the source of the first MOS transistor Q1 is connected to the positive terminal of the voltage input terminal, and the drain of the first MOS transistor Q1 is connected to the positive terminal of the voltage output terminal through a current detection resistor R5.
And a boost control module, a microprocessor and a current detection module. As shown in fig. 1, the boost control module is a chip with model number MST 9220B; the SW pin of the MST9220B chip is arranged at a position between the boosting inductor L1 and the boosting rectifying diode D1 (an output switch of the MST9220B chip is used for cutting off the boosting voltage stabilizing circuit), the IN pin of the MST9220B chip is connected with the positive terminal of the voltage input end, and the GND pin of the MST9220B chip is grounded;
the microprocessor selects a chip with the model number of STM32F030F4P 6; a BOOT0 pin (a lead mode setting pin for selecting which way to lead start when an STM32F030F4P6 chip is started) of the STM32F030F4P6 chip is connected with the positive terminal of the voltage input terminal through a current limiting resistor R3, a VDD pin of the TM32F030F4P6 chip is connected with the positive terminal of the voltage input terminal, a VSS pin of the STM32F030F4P6 chip is grounded, a PA0 pin of the STM32F030F4P6 chip is connected with a gate of a first MOS transistor Q1, a PA1 pin of the STM32F030F4P6 chip is connected with the positive terminal of the voltage input terminal, a PA5 pin of the STM32F030F4P6 chip is connected with a low-voltage indicator light LED1 through a current limiting resistor R1, and a PA14 pin of the STM32F030F4P6 chip is connected with an EN pin (potential energy control pin) of the MST9220B chip;
the current detection module selects a chip with the model number INA 180; the IN + pin of the INA180 chip is connected with one end, away from the positive terminal of the voltage output end, of the current detection resistor R5, the IN-pin of the INA180 chip is connected with one end, close to the positive terminal of the voltage output end, of the current detection resistor R5, the VS pin of the INA180 chip is connected with the positive terminal of the voltage input end, the GND pin of the INA180 chip is grounded, and the OUT pin of the INA180 chip is connected with the PA6 pin of the STM32F030F4P6 chip.
The operation of each chip is further described as follows: firstly, because the voltage boosting and stabilizing operation of the voltage boosting control module (MST 9220B chip) consumes a small part of electric energy of the wellsite sensor battery, when the positive terminal output voltage value of the voltage input terminal is high (namely, under the condition that the wellsite sensor battery is normally used), the voltage boosting and stabilizing processing is not carried out at this time; the microprocessor outputs a low level signal to an EN pin of the MST9220B chip from a PA14 pin, and closes the MST9220B chip; the microprocessor outputs a high-level signal to the first MOS tube Q1 through a pin PA0, so that the first MOS tube Q1 is in a conducting state, and the positive end of the voltage input end is directly connected with the positive end of the voltage output end through the first MOS tube Q1; when the output voltage value of the positive terminal of the voltage input terminal is reduced (namely under the condition that the output voltage of the well site sensor battery is insufficient), the microprocessor outputs a high-level signal to an EN pin of the MST9220B chip from a PA14 pin, and the MST9220B chip is turned on; the microprocessor outputs a low level signal to the first MOS tube Q1 from a pin PA0, so that the first MOS tube Q1 is turned off, and the positive terminal of the voltage input end is connected with the positive terminal of the voltage output end through the voltage boost stabilizing circuit (i.e., the voltage boost stabilizing circuit performs the voltage boost operation); and when the voltage value output by the positive terminal of the voltage input terminal is continuously reduced until the lowest voltage (near) which can work by the MST9220B chip is reached, the microprocessor outputs a flashing signal to the low-voltage indicator light LED1 through a PA5 pin, and prompts a technician to replace the well site sensor battery in time.
Example two
The second embodiment describes all technical features of the first embodiment, and specifically includes: the utility model provides a well site sensor battery voltage stabilizing module, as shown in FIG. 1, voltage input end, voltage output end. Specifically, the positive end of the voltage input end is connected with the voltage output end of the well site sensor battery to be stabilized, and the negative end of the voltage input end is grounded; the positive end of the voltage output end outputs the voltage of the sensor battery after voltage stabilization treatment, and the negative end of the voltage output end is grounded.
A boost voltage regulator circuit, and a current sense resistor R5. The voltage boosting rectifier diode comprises a voltage boosting inductor L1 and a voltage boosting rectifier diode D1, wherein the voltage boosting inductor L1, the voltage boosting rectifier diode D1 and a current detection resistor R5 are sequentially and successively arranged between the positive end of a voltage input end and the positive end of a voltage output end.
The first MOS transistor Q1. The first MOS tube Q1 is connected in parallel with the boost voltage stabilizing circuit; the source of the first MOS transistor Q1 is connected to the positive terminal of the voltage input terminal, and the drain of the first MOS transistor Q1 is connected to the positive terminal of the voltage output terminal through a current detection resistor R5.
And a boost control module, a microprocessor and a current detection module. As shown in fig. 1, the boost control module is a chip with model number MST 9220B; the SW pin of the MST9220B chip is arranged at a position between the boosting inductor L1 and the boosting rectifying diode D1 (an output switch of the MST9220B chip is used for cutting off the boosting voltage stabilizing circuit), the IN pin of the MST9220B chip is connected with the positive terminal of the voltage input end, and the GND pin of the MST9220B chip is grounded;
the microprocessor selects a chip with the model number of STM32F030F4P 6; a BOOT0 pin (a guide mode setting pin for selecting which guide starting mode is selected when the STM32F030F4P6 chip is started) of the STM32F030F4P6 chip is connected with the positive terminal of the voltage input terminal through a current limiting resistor R3, a VDD pin of the TM32F030F4P6 chip is connected with the positive terminal of the voltage input terminal, a VSS pin of the STM32F030F4P6 chip is grounded, a PA0 pin of the STM32F030F4P6 chip is connected with a gate of a first MOS transistor Q1, a PA1 pin of the STM32F030F4P6 chip is connected with the positive terminal of the voltage input terminal, a PA 3985 pin of the STM32F030F4P6 chip is connected with a low-voltage indicator light LED1 through a current limiting resistor R38, and a PA B9 pin of the STM32F030F4P6 chip is connected with an EN pin (potential energy control pin) of the MST9220 chip;
the current detection module selects a chip with the model number INA 180; the IN + pin of the INA180 chip is connected with one end, away from the positive terminal of the voltage output end, of the current detection resistor R5, the IN-pin of the INA180 chip is connected with one end, close to the positive terminal of the voltage output end, of the current detection resistor R5, the VS pin of the INA180 chip is connected with the positive terminal of the voltage input end, the GND pin of the INA180 chip is grounded, and the OUT pin of the INA180 chip is connected with the PA6 pin of the STM32F030F4P6 chip.
In addition, example two describes a more preferred embodiment. Specifically, as shown in fig. 1: the well site sensor battery voltage stabilizing module also comprises: a voltage feedback resistor R6 and a voltage feedback resistor R7; a front-end voltage-stabilizing filter capacitor C1 and a rear-end voltage-stabilizing filter capacitor C2. The FB pin (feedback pin) of the MST9220B chip is connected to the output terminal of the boost rectifier diode D1 through a voltage feedback resistor R6, and the FB pin of the MST9220B chip is grounded through a voltage feedback resistor R7. Two ends of the front-end voltage-stabilizing filter capacitor C1 are respectively connected with the positive terminal and the grounding terminal of the voltage input end; two ends of the rear-end voltage-stabilizing filter capacitor C2 are respectively connected with the positive terminal and the grounding terminal of the voltage output end, so that the front circuit and the rear circuit of the voltage-boosting and voltage-stabilizing circuit are respectively subjected to filter processing. And preferably, the VDDA pin (external analog power ADC terminal) of the TM32F030F4P6 chip is connected to the positive terminal of the voltage input terminal.
Furthermore, as the utility model relates to a comparatively preferred embodiment, the controllable steady voltage source that still includes in the well site sensor battery voltage stabilizing module. As shown in fig. 1, the controllable voltage regulator source is a chip with model number TL 431; the PA2 end of the TM32F030F4P6 chip is connected with the cathode of the TL431 chip through a current limiting resistor R4, and the anode of the TL431 chip is grounded; the PA3 pin of the TM32F030F4P6 chip is connected to the reference pole of the TL431 chip. As a preferred embodiment of the present invention, as shown in fig. 1, the cathode of the TL431 chip is further connected to the reference electrode of the TL431 chip, so that when the PA2 terminal of the TM32F030F4P6 chip is set to a high level toward the cathode of the TL431 chip, the PA3 pin of the TM32F030F4P6 chip reads the reference voltage (for example, the reference voltage is 2.5V) provided by the reference electrode of the L431 chip, and the reference voltage is used to provide a voltage reference value for the voltage regulating and stabilizing process of the wellsite sensor battery; when the reference voltage is not required to be read, the PA2 terminal of the TM32F030F4P6 chip is set to a low level toward the cathode of the TL431 chip, so as to achieve the technical effect of power saving.
EXAMPLE III
The third embodiment describes all technical features of the first embodiment, and specifically includes: the utility model provides a well site sensor battery voltage stabilizing module, as shown in FIG. 1, voltage input end, voltage output end. Specifically, the positive end of the voltage input end is connected with the voltage output end of the well site sensor battery to be stabilized, and the negative end of the voltage input end is grounded; the positive end of the voltage output end outputs the voltage of the sensor battery after voltage stabilization treatment, and the negative end of the voltage output end is grounded.
A boost voltage regulator circuit, and a current sense resistor R5. The voltage boosting rectifier diode comprises a voltage boosting inductor L1 and a voltage boosting rectifier diode D1, wherein the voltage boosting inductor L1, the voltage boosting rectifier diode D1 and a current detection resistor R5 are sequentially and successively arranged between the positive end of a voltage input end and the positive end of a voltage output end.
The first MOS transistor Q1. The first MOS tube Q1 is connected in parallel with the boost voltage stabilizing circuit; the source of the first MOS transistor Q1 is connected to the positive terminal of the voltage input terminal, and the drain of the first MOS transistor Q1 is connected to the positive terminal of the voltage output terminal through a current detection resistor R5.
And a boost control module, a microprocessor and a current detection module. As shown in fig. 1, the boost control module is a chip with model number MST 9220B; the SW pin of the MST9220B chip is arranged at a position between the boosting inductor L1 and the boosting rectifying diode D1 (an output switch of the MST9220B chip is used for cutting off the boosting voltage stabilizing circuit), the IN pin of the MST9220B chip is connected with the positive terminal of the voltage input end, and the GND pin of the MST9220B chip is grounded;
the microprocessor selects a chip with the model number of STM32F030F4P 6; a BOOT0 pin (a guide mode setting pin for selecting which guide starting mode is selected when the STM32F030F4P6 chip is started) of the STM32F030F4P6 chip is connected with the positive terminal of the voltage input terminal through a current limiting resistor R3, a VDD pin of the TM32F030F4P6 chip is connected with the positive terminal of the voltage input terminal, a VSS pin of the STM32F030F4P6 chip is grounded, a PA0 pin of the STM32F030F4P6 chip is connected with a gate of a first MOS transistor Q1, a PA1 pin of the STM32F030F4P6 chip is connected with the positive terminal of the voltage input terminal, a PA 3985 pin of the STM32F030F4P6 chip is connected with a low-voltage indicator light LED1 through a current limiting resistor R38, and a PA B9 pin of the STM32F030F4P6 chip is connected with an EN pin (potential energy control pin) of the MST9220 chip;
the current detection module selects a chip with the model number INA 180; the IN + pin of the INA180 chip is connected with one end, away from the positive terminal of the voltage output end, of the current detection resistor R5, the IN-pin of the INA180 chip is connected with one end, close to the positive terminal of the voltage output end, of the current detection resistor R5, the VS pin of the INA180 chip is connected with the positive terminal of the voltage input end, the GND pin of the INA180 chip is grounded, and the OUT pin of the INA180 chip is connected with the PA6 pin of the STM32F030F4P6 chip.
In addition, in the third embodiment, a second MOS transistor Q2 is further described. It is noted that, as shown in fig. 1, the second MOS transistor Q2 is disposed between the boost voltage stabilizing circuit and the current detection resistor R5; the source of the second MOS transistor Q2 is connected to the output side of the boost rectifier diode D1, and the drain of the second MOS transistor Q2 is connected to the drain of the first MOS transistor Q1; the grid electrode of the second MOS tube Q2 is connected with a PA13 pin of the STM32F030F4P6 chip; the second MOS transistor Q2 is used to open when overcurrent occurs, thereby protecting the subsequent circuit elements connected to the voltage output terminal. Specifically, in the process, firstly, the current detection module INA180 chip detects the current flowing through the current detection resistor R5 to realize current monitoring; when overcurrent is detected, the current detection module INA180 chip feeds back the monitoring condition to the pin PA6 of the microprocessor through the OUT pin, and the pin PA0 of the microprocessor outputs a low level signal to the first MOS transistor Q1, and the pin PA13 outputs a low level signal to the second MOS transistor Q2, so that the first MOS transistor Q1 and the second MOS transistor Q2 are disconnected between the positive terminal of the voltage input end and the positive terminal of the voltage output end, and the overcurrent protection process is completed.
The utility model provides a well site sensor battery voltage stabilizing module, this well site sensor battery voltage stabilizing module are including voltage input end, voltage output end, voltage stabilizing circuit, current detection resistance R5, first MOS pipe Q1, boost control module, microprocessor and current detection module etc. circuit constitutional unit. The well site sensor battery voltage stabilizing module with the circuit structure characteristics has the advantages that the industrial embedded chip is adopted in the well site sensor battery voltage stabilizing module, the electric appliance is compact in structure, strong in processing capacity and strong in anti-interference capacity, and the stability of the well site sensor battery can be effectively improved until the electric quantity of the well site sensor battery is fully exhausted.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.